JPH05273234A - Mmic apparatus and rf probe head - Google Patents

Abstract

PURPOSE:To achieve accurate on-wafer measurement with using a high frequency measuring signal while reducing the loss at an input/output part of an RF probe head or a to-be-measured apparatus. CONSTITUTION:An input part 2 and an output part 3 of an MMIC device 1 are formed in the structure of a waveguide, wherein a waveguide member is built in a dielectric substrate 11 and, the ends of an input and output signal lines 2a, 3a are so positioned as to be on a part inside the waveguide member of the substrate. A signal input/output part of an RF probe head 6 is constituted of a waveguide 7. The head 6 is connected with the input and output parts 2, 3 of the MMIC device 1 by pressing the end faces of the respective waveguides into tight contact with each other.

Description

Detailed Description of the Invention

[0001]

FIELD OF THE INVENTION The present invention relates to an MMIC device and an RF.
More specifically, the present invention relates to a structure of an input / output terminal of an MMIC device operating in a quasi-millimeter wave and a millimeter wave band of 30 GHz or higher, and a structure of an input / output part of an RF probe head for measuring characteristics of the MMIC device. ..

[0002]

2. Description of the Related Art FIG. 7 shows a conventional MMIC (monolithic
FIG. 7 (a) is a plan view showing an MMIC amplifier for amplifying a microwave signal, and FIG. 7 (b) is a diagram for explaining a microwave integrated circuit) device and an RF probe head for on-wafer measurement thereof. ) Is an external view of the RF probe head, and FIG. 8 is the MMIC amplifier and RF.
It is a figure which expands and shows the input / output part of a probe head.
In the figure, reference numeral 100 is an MMIC device for amplifying a microwave or millimeter wave signal, and an element unit 100a for amplifying a microwave signal and a microwave input from the signal input unit 102 to the element unit 100a on the surface of a dielectric substrate 101 thereof. Input side signal line 102a for transmitting to the
An output-side signal line 103a for transmitting a microwave output from a to the signal output unit 103 is formed, and each of the signal lines 102a and 103 is formed on the back surface of the dielectric substrate 101.
A ground conductor 104 that forms a microstrip line together with a is formed.

Here, the ground conductor 1 is provided on both sides of the ends of the signal lines 102a and 103a through via holes 101a.
An input pad 102b and an output pad 103b dedicated to RF measurement connected to 04 are formed, and these pads 102b and 103b and the signal lines 102a and 103 are formed.
a is the signal input unit 102 and the output unit 103,
A line conversion unit that converts the microstrip line into a coplanar line is configured.

Reference numeral 106 denotes an RF probe head for measuring the characteristics of the MMIC device 100 in a millimeter wave band having a measurement frequency of about 100 GHz.
A coplanar type transmission line composed of a signal line 107a and ground lines 107b arranged on both sides of the signal line 107a is formed on the back side of 06a, and the input section 1 of the MMIC device 100 is formed.
02 or the element side terminal connectable to the coplanar line of the output section 103. Reference numeral 108 denotes a measuring device side terminal of the RF probe head, which has a waveguide structure for converting the coplanar line on the back surface side of the frame 106a into a low loss waveguide in the millimeter wave band.

Next, a method of measuring the characteristics of the conventional MMIC amplifier in a wafer state will be described. First, one RF probe head 106 is connected to the MMIC amplifier 100.
Another RF probe head (not shown) is closely attached to the input section 102 of the output section 103 so that the coplanar lines on the head side and the amplifier side come into contact with each other. Then, from the RF probe head 106 on the input side by the measuring device (not shown)
The millimeter wave band signal around 00 GHz is used for the above MMIC amplifier 1
00, the microwave signal amplified by the amplification element section 100a is taken out from the RF probe head on the output side, and the characteristic of the MMIC apparatus 100 is measured by the above measuring apparatus.

[0006]

However, the conventional MMI
The C-amplifier and the RF probe head for measuring the characteristics of the C-amplifier have a problem that the measurement accuracy is poor because a coplanar line having a large loss in the millimeter wave band is used for each input / output portion.

The present invention has been made in order to solve the above-mentioned problems. On-wafer measurement using a high-frequency measurement signal is performed in the RF probe head and at the signal input / output portion of the device under test. It is an object of the present invention to obtain an MMIC device and an RF probe head capable of reducing the noise and performing it with high accuracy.

[0008]

MMIC according to the present invention
The device has a waveguide structure capable of transmitting a high frequency signal at an input / output terminal for transmitting / receiving a characteristic measurement signal to / from an RF probe head.

In the MMIC device according to the present invention, the input / output terminal for passing the characteristic measuring signal to and from the RF probe head has an antenna structure capable of transmitting and receiving a high frequency signal.

The RF probe head according to the present invention has an M
The characteristic measurement input / output unit for transmitting / receiving the characteristic measurement signal to / from the MIC device has a waveguide structure capable of transmitting a high frequency signal.

In the RF probe head according to the present invention, the input / output unit for exchanging the characteristic measuring signal with the MMIC device for processing the high frequency signal has an antenna structure capable of transmitting and receiving the high frequency signal. Is. Further, according to the present invention, in the RF probe head, the input / output section with the measuring device side for measuring the characteristic of the MMIC device has a waveguide structure capable of transmitting a high frequency signal.

In the RF probe head according to the present invention, an input / output unit for transmitting / receiving a characteristic measuring signal to / from an MMIC device in which a signal input / output portion is composed of a microstrip line or a coplanar line, This is a structure having a line conversion mechanism for converting the transmission line format of a high frequency signal from a microstrip line or a coplanar line to a waveguide.

[0013]

In the MMIC device according to the present invention, the RF
The input / output terminal for passing the characteristic measurement signal to and from the probe head has a waveguide structure capable of transmitting high frequency signals or an antenna structure capable of transmitting and receiving high frequency signals. It is possible to reduce the loss of the high frequency signal in the portion in the millimeter wave band and perform the characteristic measurement with high accuracy.

In the RF probe head according to the present invention, the input / output unit for exchanging the characteristic measurement signal with the MMIC device has a waveguide structure or an antenna structure. The characteristics of the MMIC device can be accurately measured by reducing the loss of the high frequency signal in the millimeter wave band.

Further, in the RF probe head having the antenna structure for the input / output section with the MMIC apparatus side, the measuring apparatus side input / output section has a waveguide structure, so that the connection with the measuring apparatus is facilitated and signal attenuation is performed. Can be done without inviting.

Further, in the RF probe head according to the present invention, the input / output unit for transmitting / receiving the characteristic measurement signal to / from the MMIC device in which the signal input / output portion is constituted by the microstrip line or the coplanar line. Has a line conversion mechanism for converting the transmission line format of a high-frequency signal from a microstrip line or a coplanar line to a waveguide. Therefore, the characteristic measurement signal is transmitted between the input and output terminals of the MMIC device and the head. Immediately before and after the transmission / reception, the signal is transmitted through the waveguide structure line with a small loss, whereby the loss of the measurement signal is reduced, and highly accurate characteristic measurement of the MMIC device becomes possible.

[0017]

Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a diagram for explaining an MMIC device according to a first embodiment of the present invention and an RF probe head used for on-wafer measurement thereof. FIG. 1 (a) is a plan view of the MMIC device, and FIG. ) Is a perspective view of the RF probe head, and FIG. 2 is a view for explaining a detailed structure and a measurement operation of an input / output portion of the MMIC amplifier. In the figure, reference numeral 1 is an MMIC device whose characteristics are measured in a wafer state using an RF probe head, and an element unit 1a for amplifying a microwave input is provided on a surface of a dielectric substrate 11 thereof.
An input side signal line 2a for transmitting a microwave input from a signal input section (input terminal) 2 to the element section 1a, and a microwave output from the element section 1a to a signal output section (output terminal) 3. Is formed on the rear surface of the dielectric substrate 11, and the signal lines 2a,
A ground conductor 4 which forms a microstrip line together with 3a is formed.

In the present embodiment, in the signal input section 2, the waveguide member 2b has its upper end surface aligned with the surface of the dielectric substrate and its lower end surface connected to the ground conductor 4 as described above. 4 is embedded in the dielectric substrate 4
The starting end of the input side signal line 2a is located at the center of the inside of the waveguide member 2b. In addition, the signal output unit 3
Similarly to the signal input section 2, the waveguide member is embedded in the dielectric substrate, and the output side signal line 3a is provided in the central portion of the member.
The structure is such that the end of is located.

Reference numeral 6 denotes an RF probe head for measuring the characteristics of the MMIC device 1 on-wafer in the millimeter wave band having a measurement frequency of about 100 GHz.
The RF probe head is movable with respect to the manipulator 14 in the direction parallel to the wafer surface. Also this R
The F probe head 6 has a waveguide 7 having the same cross-sectional shape as the waveguide members 2b and 3b at a portion for transmitting and receiving microwaves to and from the MMIC device 1. Is the input unit 2 or the output unit 3 of the MMIC device 1.
By closely contacting the end faces of the waveguide members 2b and 3b, signals can be transferred between the input / output units 2 and 3 of the MMIC device 1. Reference numeral 7a is a notch formed in the center of the lower end of the waveguide 7 so that the waveguide 7 can be adhered to the waveguide member 2b without contacting the tip of the signal line 2a. For R
The input / output section of the F probe head 6 on the measuring device side is constituted by a waveguide 8 as in the conventional example.

Next, the operation will be described. First, the manipulator 14 is operated to operate the MMIC in the wafer state.
The RF probe head 6 on the input side is connected to the input section 2 of the amplifier 1.
Then, the output side RF probe head (not shown) is brought into close contact with the output part 3 to bring the end face of the waveguide member 2b of the input / output part into contact with the end face of the head side waveguide 7. Then, in this state, a millimeter wave band signal around 100 GHz is transmitted from the RF probe head 6 on the input side by a measuring device (not shown).
It is applied to the MIC amplifier 1, the amplified microwave signal amplified by the element portion 1a is taken out from the RF probe head on the output side, and the characteristic of the MMIC device is measured by the measuring device.

As described above, in this embodiment, the MMIC device 1
In the input section 2 and the output section 3, the waveguide member 2b is embedded in the dielectric substrate 4 and the signal lines 2a and 3a are arranged so that their ends are located at the center of the end face of the waveguide member 2b. , The input / output part (input / output terminal) has a waveguide structure,
An input / output unit of the RF probe head 6 with respect to the MMIC device 1 is configured by a waveguide 7, and the head 6 and the input / output units 2 and 3 of the MMIC device 1 are connected to each other by connecting end faces of the respective waveguides. Since it was done by closely contacting, MM
The coplanar line, which has a large loss in the millimeter wave band, does not exist in the input / output portions of the IC device 1 and the RF probe head 6, whereby the loss in the millimeter wave band can be reduced and the characteristic measurement can be performed accurately.

FIG. 3 is a view for explaining an RF probe head according to a second embodiment of the present invention, FIG. 4 is an explanatory view of its detailed structure, and FIG. 4 (a) is a bottom view of the head. FIG. 4 (b) is a perspective view showing a cross section taken along line IVb-IVb of FIG. 4 (a).

The RF probe head 20 of this embodiment is
In the conventional MMIC device 100 shown in FIGS. 7 and 8, for inputting / outputting signals to / from the RF measurement input / output units 102 and 103, an input / output unit 21 is used, and a microwave transmission line format is a microwave strip. A line conversion mechanism for converting a line into a waveguide is provided.

That is, the RF probe head 20 main body is composed of a horizontal waveguide portion 20a and a vertical waveguide portion 20b integrally formed with one end of the waveguide portion 20a. Lower surface 2 of the waveguide 20a in the horizontal direction
0d is formed with a ground side pad 23 that can come into contact with the ground side pad 102b of the input section 102 of the MMIC device 100, and in the center of the opening 20c formed between the ground side pads 23, A signal side pad 24 that can contact the signal line 102a is provided.

The signal pad 24 is the lower end 2 of the conductive member 22 arranged in the waveguide 20a of the head body.
2a is supported by the tip 2b of the conductive member 22.
Is located on the waveguide portion 20b side of the waveguide portion 20a, and the conductive member 22 is a side surface of which the width in the direction is stepwise widened toward the signal transmission direction of the waveguide 20a. It has a shape. With such a configuration, in the RF probe head 20, the transmission line format of the microwave signal is converted from the input / output side microstrip line of the MMIC device 100 to the waveguide.

In this embodiment, the on-wafer characteristic measurement can be performed in the same manner as the conventional apparatus shown in FIGS. 7 and 8, and the description thereof will be omitted.

In this embodiment having such a configuration, the transmission line format is converted from the microstrip line of the MMIC device 100 to the waveguide in the portion 21 of the RF probe head 20 for transmitting and receiving signals to and from the MMIC device 100. Since the line conversion mechanism is provided, the coplanar line portion of the RF probe head 20 is eliminated, and the loss in the millimeter wave band can be reduced accordingly, and the characteristic measurement can be performed accurately.

In this embodiment, the case where the input / output unit 21 of the RF probe head 20 is provided with a line conversion mechanism from a microstrip line to a waveguide has been described.
The line conversion mechanism may convert the transmission line format of a high frequency signal from a coplanar line to a waveguide.

FIG. 5 shows an M according to the third embodiment of the present invention.
5A and 5B are views for explaining the MIC device and the RF probe head, and FIG. 5A is a plan view showing the configuration of the MMIC device.
(b) is a perspective view showing the structure of the RF probe head,
FIG. 6 is a diagram showing a state in which the above MMIC device is performing on-wafer measurement.

In the figure, reference numeral 30 denotes an MMIC device of this embodiment. In this device 30, a signal for RF measurement is used in place of the waveguide member 2b arranged at the input / output section of the device of the first embodiment. The input section 32 receives the radio wave and receives the signal line 2a on the input side.
The input side antenna 32a to be introduced into the
3 is provided with an output side antenna 33a for transmitting a signal of the output side signal line 3a, and each antenna is connected to one end of its input and output side signal lines 2a, 3a and is oriented in a direction perpendicular to this. It is composed of the formed track.
The other structure is exactly the same as that of the MMIC device 1 of the first embodiment.

Reference numeral 36 is the RF probe head of this embodiment. In this head 36, instead of the element side waveguide 7 of the head 6 of the first embodiment, the antenna 32a of the input / output section of the MMIC device 30 is used. , 33a is provided, and the other points are the same as the head 6 of the first embodiment.

In this embodiment having such a structure, the on-wafer characteristic measurement is performed as follows. First, the RF probe head 36 is arranged close to the input unit 32 and the output unit 33 of the MMIC device 30 so that the input and output side antennas 32a and 33a can be transmitted / received. When a measurement signal (not shown) is supplied to the input side RF probe head 36, the signal is transmitted to the antenna section 37 through the waveguide 38, and propagates in the air as a radio wave from here to propagate to the MMIC device 30. The signal is received by the antenna 32a of the input unit 32 and further input to the element unit 1a through the input side signal line 2a. Then, the output signal amplified here propagates to the output section 33 through the output side signal line 3a, is transmitted into the air by the output side antenna 33a, and is transmitted to the antenna section (not shown) of the output side RF probe head. It is received and further input to the measuring device via a waveguide (not shown) of the RF probe head. In this way, the on-wafer measurement of the MMIC device 30 is performed.

In this embodiment having such a configuration, the MMIC
The antennas 32a and 33a are provided in the input / output units 32 and 33 for measuring the characteristics of the device 30, and the antenna unit 37 is also provided in the signal input / output unit of the RF probe head so that signals are transmitted between the MMIC device 30 and the head 36. Since the transmission / reception is performed via the respective antennas, as in the first embodiment, the MMIC device and the input / output portion of the RF probe head do not have a coplanar line with large loss in the millimeter wave band. Thus, there is an effect that loss in the millimeter wave band can be reduced and characteristic measurement can be performed accurately.

Further, since the input / output portion of the RF probe head 36 on the measuring device side is the waveguide 38, there is an effect that the connection with the measuring device can be easily performed without causing signal attenuation.

[0035]

As described above, according to the MMIC device of the present invention, the input / output terminal for transmitting / receiving the characteristic measurement signal to / from the RF probe head is provided with a waveguide capable of transmitting a high frequency signal. Since the tube structure or the antenna structure capable of transmitting and receiving high-frequency signals is adopted, there is an effect that loss of the high-frequency signals in the input / output terminal portion in the millimeter wave band can be reduced and characteristic measurement can be accurately performed.

Further, according to the RF probe head of the present invention, the input / output unit for transmitting / receiving the characteristic measurement signal to / from the MMIC device has the waveguide structure or the antenna structure. There is an effect that the loss of the high frequency signal in the section can be reduced and the characteristics can be measured accurately.

Further, in the RF probe head having the antenna structure for the input / output section with the MMIC apparatus side, the input / output section for the measuring apparatus side has the waveguide structure, which facilitates the connection with the measuring apparatus and attenuates the signal. There is also an effect that can be performed without inviting.

Further, according to the RF probe head of the present invention, the input / output for exchanging the characteristic measuring signal with the MMIC device in which the input / output portion of the signal is composed of the microstrip line or the coplanar line. Since the section has a structure having a line conversion mechanism for converting the transmission line format of a high frequency signal from a microstrip line or a coplanar line to a waveguide, the above-mentioned characteristic measurement signal is transferred from the input / output terminal of the MMIC device to the head. Immediately before and immediately after that, this results in transmission of a line having a waveguide structure with low loss, and this reduces the loss of the measurement signal, and has the effect of enabling highly accurate characteristic measurement of the MMIC device. ..

[Brief description of drawings]

FIG. 1 is a diagram showing an MMIC device and an RF probe head according to a first embodiment of the present invention.

FIG. 2 is a diagram showing a detailed structure of an MMIC device and an RF probe head of the first embodiment.

FIG. 3 is a perspective view showing an RF probe head and an input / output unit of an MMIC device according to a second embodiment of the present invention.

FIG. 4 is a diagram showing in detail the structure of the RF probe head of the second embodiment.

FIG. 5 is a diagram showing configurations of an MMIC device and an RF probe head according to a third embodiment of the present invention.

FIG. 6 is a diagram showing a detailed structure of the MMIC device of the third embodiment and a measurement state thereof.

FIG. 7 is a diagram showing a conventional MMIC device and its RF probe head.

FIG. 8 is a diagram showing a detailed structure of a conventional MMIC device and an RF probe head.

[Explanation of symbols]

 1, 30, 100 MMIC device 1a Amplifying element part 2, 32, 102 Signal input part 2a, 102a Input side signal line 3, 33, 103 Signal output part 3a, 103a Output side signal line 4, 104 Ground conductor 6, 20, 36 RF probe head 7 Element side waveguide 8 Measuring device side waveguide 11, 101 Dielectric substrate 13 Screw 14 Manipulator 32a Input side antenna 33a Output side antenna 37 Antenna part 38 Waveguide part 100 MMIC device 101a Via hole

Claims (6)

[Claims] 1. An MM for processing a high-frequency signal, wherein characteristic measurement in a wafer state is performed by using an RF probe head.
In the IC device, an input / output terminal for transmitting and receiving a signal to and from the RF probe head has a waveguide structure capable of transmitting a high frequency signal. 2. An MM for processing a high frequency signal, the characteristic measurement of which is performed in a wafer state using an RF probe head.
In the IC device, the MMIC device characterized in that an input / output terminal for transmitting and receiving a signal to and from the RF probe head has an antenna structure capable of transmitting and receiving a high frequency signal. 3. An RF probe head for measuring the characteristics of an MMIC device for processing a high frequency signal in a wafer state, wherein a signal input / output unit for exchanging signals with the input / output portion of the MMIC device is provided. An RF probe head having a waveguide structure capable of transmitting high frequency signals. 4. An RF probe head for measuring the characteristics of an MMIC device for processing a high frequency signal in a wafer state, wherein a signal input / output unit for exchanging signals with the input / output portion of the MMIC device is provided. An RF probe head having an antenna structure capable of transmitting and receiving high frequency signals. 5. The RF probe head according to claim 4, wherein the input / output unit with the measuring device side for measuring the characteristic of the MMIC device has a waveguide structure capable of transmitting a high frequency signal. Characteristic RF probe head. 6. An RF probe head for measuring the characteristics of an MMIC device for processing a high frequency signal, the signal input / output portion of which is constituted by a microstrip line or a coplanar line in a wafer state. The signal input / output unit for exchanging signals with the output unit is equipped with a line conversion mechanism for converting the format of the transmission line for high-frequency signals from the microstrip line or the coplanar line to the waveguide. Characteristic RF probe head.