JPH05235689A - High frequency device - Google Patents

High frequency device

Info

Publication number
JPH05235689A
JPH05235689A JP3822092A JP3822092A JPH05235689A JP H05235689 A JPH05235689 A JP H05235689A JP 3822092 A JP3822092 A JP 3822092A JP 3822092 A JP3822092 A JP 3822092A JP H05235689 A JPH05235689 A JP H05235689A
Authority
JP
Japan
Prior art keywords
high frequency
frequency device
filter
bare chip
circuit board
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3822092A
Other languages
Japanese (ja)
Inventor
Hiroshi Owada
廣 大和田
Takehiko Fukaya
武彦 深谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soshin Electric Co Ltd
Original Assignee
Soshin Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soshin Electric Co Ltd filed Critical Soshin Electric Co Ltd
Priority to JP3822092A priority Critical patent/JPH05235689A/en
Publication of JPH05235689A publication Critical patent/JPH05235689A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/18Printed circuits structurally associated with non-printed electric components
    • H05K1/181Printed circuits structurally associated with non-printed electric components associated with surface mounted components

Abstract

PURPOSE:To attain the miniaturization and light weight of a high frequency device by using a surface acoustic filter in a bare chip state. CONSTITUTION:The high frequency device is formed in such a way that a semiconductor device 3, a general electronic component 4, and the surface acoustic wave(SAW) filter 10 set in the bare chip state are packaged on the surface of a wiring circuit board 1 in which a wiring circuit 2 consisting of a wiring conductor and an electrode for component mounting is provided, and a high frequency module provided with a lead terminal to be packaged on a printed circuit board is sealed with a metallic case 7. In other words, electrode pads 2a, 2b for the mounting of the SAW filter 10 set in the bare chip state in the prescribed position of the board 1 that is the base substance of the high frequency device are formed. and also, a through hole 2c is formed as needed. Thereby, it is possible to make the circuit 2 of the SAW filter packaging part of the board 1 into high density, and also, to reduce the height of the module, and to miniaturize the whole device including the case 7, and thereby, the miniaturization and light weight of the high frequency device can be attained.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、通信機器等に使用され
る高周波デバイスに係り、詳しくは、表面弾性波フィル
ター(以下、SAWフィルターと略すことがある)を実
装した高周波デバイスの小型,軽量化を図ることができ
る構造に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high frequency device used for communication equipment and the like, and more specifically to a small and lightweight high frequency device having a surface acoustic wave filter (hereinafter sometimes abbreviated as SAW filter) mounted thereon. The present invention relates to a structure that can be realized.

【0002】[0002]

【従来の技術】自動車電話器,携帯電話器に代表される
移動体通信端末機器は、半導体ICの高集積化を中心と
し、電圧制御発信器(VCO),高周波増幅器等の高周
波デバイス、小型,表面実装形態化された抵抗器,コン
デンサ等、一般電子部品とフィルター等の電子部品,デ
バイスを、高密度化したプリント配線基板に実装するこ
とで、小型,軽量化が実現されてきた。
2. Description of the Related Art A mobile communication terminal device represented by a car telephone and a mobile telephone mainly focuses on high integration of a semiconductor IC, and has a high frequency device such as a voltage control oscillator (VCO), a high frequency amplifier, a small size, By mounting general electronic components such as surface mount resistors and capacitors and electronic components such as filters and devices on a high-density printed wiring board, downsizing and weight reduction have been realized.

【0003】これらの移動体通信端末機器は、今後共、
より機能を高めつつ一層の小型,軽量化が進展するもの
と期待され、そのためには、使用される電子部品及びデ
バイスの更なる小形化,高性能化は不可欠の要素とな
る。
These mobile communication terminal devices will be used in the future.
It is expected that the size and weight will be further improved while further improving the functions, and for that purpose, further miniaturization and higher performance of the electronic parts and devices used are indispensable elements.

【0004】図5は,従来の高周波デバイスの一般的な
構造断面図を示すもので、配線回路基板1の表面に、導
体配線路及び部品搭載のための電極より成る配線回路2
を設け、該配線回路2に、半導体デバイス3,抵抗器,
コンデンサ等の一般電子部品4やSAWフィルター等の
フィルター5を実装している。
FIG. 5 shows a general structural sectional view of a conventional high frequency device, in which a wiring circuit 2 including conductor wiring paths and electrodes for mounting components is provided on the surface of a wiring circuit board 1.
And a semiconductor device 3, a resistor,
A general electronic component 4 such as a capacitor and a filter 5 such as a SAW filter are mounted.

【0005】また、配線回路基板1には、プリント配線
回路基板搭載のためのリード端子6が設けられ、さら
に、シールドと耐環境保護による信頼性確保の目的で、
金属ケース7を被覆している。
Further, the printed circuit board 1 is provided with lead terminals 6 for mounting the printed circuit board, and further, for the purpose of ensuring reliability by shielding and environmental protection,
The metal case 7 is covered.

【0006】上記高周波デバイスの基体となる配線回路
基板1には、紙/フェノール,ガラス/エポキシ等の有
機系のものや、セラミック系のものがあるが、最近は小
型,軽量化実現のため、多層化の傾向が強くなってきて
いる。
The printed circuit board 1 which is the base of the high frequency device includes organic type such as paper / phenol, glass / epoxy and the like, and ceramic type. Recently, in order to realize reduction in size and weight, The tendency of multi-layering is becoming stronger.

【0007】[0007]

【発明が解決しようとする課題】上記のように、フィル
ターを搭載して成る高周波デバイスにおいて、使用され
るフィルターとしては、LCフィルター,誘電体フィル
ター,SAWフィルターが適宜選択されるが、一般的
に、フィルターの性能と形状寸法とは、反比例する関係
にあって、フィルターの性能を高めれば高めるほど形状
寸法は大きくなり、デバイスの小型,軽量化の妨げとな
る。逆に、機器寸法の制約上からのフィルターの小型化
は、フィルター特性が不十分故の機器性能の妥協を強い
られることになる。
As described above, in a high frequency device having a filter mounted thereon, an LC filter, a dielectric filter or a SAW filter is appropriately selected as a filter to be used. The performance and shape of the filter are in inverse proportion to each other, and the higher the performance of the filter, the larger the shape and size, which hinders reduction in size and weight of the device. On the contrary, downsizing of the filter due to the limitation of the device size compels the device performance due to insufficient filter characteristics.

【0008】最近、機器の小型化のために多く用いられ
ているSAWフィルターにおいても、この関係は例外で
はない。特にSAWフィルターは、素子を金属ケースに
封止した単体デバイス、いわゆる缶封止パッケージ型S
AWフィルターとして使用されているため、機器の小
型,軽量化実現の大きな障害となっていた。
This relationship is no exception in the SAW filter which has been widely used recently for downsizing of equipment. In particular, the SAW filter is a so-called can-sealing package type S in which a device is sealed in a metal case.
Since it is used as an AW filter, it has been a major obstacle to the realization of smaller and lighter equipment.

【0009】そこで本発明は、SAWフィルターとして
缶封止パッケージ型を用いずに、該SAWフィルターを
裸チップ状態で用いることにより、小型,軽量化を図る
ことができる高周波デバイスを提供することを目的とし
ている。
Therefore, the object of the present invention is to provide a high-frequency device which can be reduced in size and weight by using the SAW filter in a bare chip state without using a can sealed package type as the SAW filter. I am trying.

【0010】[0010]

【課題を解決するための手段】上記目的を達成するた
め、本発明の高周波デバイスは、配線回路基板の少くと
も一面に、表面弾性波フィルターを裸チップ状態でボン
ディング実装したことを特徴とするものであり、特に、
前記配線回路基板が、高周波デバイスの損失低減に不可
欠な高導電性金属が配線材料として使用できる低温多層
セラミック系から成り、回路的にフィルター機能を内蔵
するものであることを特徴とするものである。
In order to achieve the above object, a high frequency device of the present invention is characterized in that a surface acoustic wave filter is bonded and mounted in a bare chip state on at least one surface of a printed circuit board. And, in particular,
It is characterized in that the printed circuit board is made of a low-temperature multilayer ceramic system in which a highly conductive metal essential for reducing loss of a high frequency device can be used as a wiring material, and has a built-in filter function in a circuit. ..

【0011】さらに、本発明の高周波デバイスは、低温
多層セラミック配線回路基板の少くとも一面に、キャビ
ティを少くとも1個形成するとともに、該キャビティ内
に、裸チップ状態の表面弾性波フィルターを埋め込み、
ボンディング実装したことを特徴とするものを含むもの
である。
Further, in the high frequency device of the present invention, at least one cavity is formed on at least one surface of the low temperature multilayer ceramic wiring circuit board, and a surface acoustic wave filter in a bare chip state is embedded in the cavity.
It includes those characterized by being mounted by bonding.

【0012】[0012]

【作 用】上記のように、SAWフィルターを裸チップ
状態で実装することにより、従来の缶封止パッケージ型
のものを実装する場合に比べて、高周波デバイスを小
型,軽量化することができる。
[Operation] By mounting the SAW filter in a bare chip state as described above, it is possible to reduce the size and weight of the high-frequency device as compared with the case of mounting the conventional can-sealed package type.

【0013】[0013]

【実施例】以下、本発明を、図面に示す実施例に基づい
てさらに詳細に説明する。なお、前記図5に示した従来
例と同一要素のものには同一符号を付して、その詳細な
説明は省略する。
DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described in more detail below with reference to the embodiments shown in the drawings. The same elements as those of the conventional example shown in FIG. 5 are designated by the same reference numerals, and detailed description thereof will be omitted.

【0014】図1は、本発明の高周波デバイスの第1実
施例を示すもので、この高周波デバイスは、配線導体及
び部品搭載のための電極より成る配線回路2を設けた配
線回路基板1の表面に、半導体デバイス3、抵抗器,コ
ンデンサ等の一般電子部品4,4,並びに裸チップ状態
のSAWフィルター10をボンディング実装し、かつプ
リント配線回路基板へ実装するためのリード端子6を設
けた高周波回路モジュールを、金属ケース7で封止した
ものである。
FIG. 1 shows a first embodiment of a high-frequency device according to the present invention. This high-frequency device has a surface of a wiring circuit board 1 provided with a wiring circuit 2 composed of wiring conductors and electrodes for mounting components. A semiconductor device 3, general electronic components 4, 4, such as resistors and capacitors, and a SAW filter 10 in a bare chip state by bonding, and a lead terminal 6 for mounting the SAW filter 10 on a printed wiring circuit board. The module is sealed with a metal case 7.

【0015】即ち、高周波デバイスの基体である配線回
路基板1の所定位置に、裸チップ状態のSAWフィルタ
ー10を搭載するための電極パッド2a,2bを形成す
るとともに、必要に応じてスルーホール2cを形成して
おく。裸チップ状態のSAWフィルター10の実装は、
一般的なボンディングで行うことができ、ワイヤーボン
ディングあるいはフリップチップボンディングのいずれ
の方法でも良い。
That is, the electrode pads 2a and 2b for mounting the SAW filter 10 in the bare chip state are formed at predetermined positions of the printed circuit board 1 which is the base of the high frequency device, and the through holes 2c are formed if necessary. Form. Mounting the SAW filter 10 in the bare chip state
It can be performed by general bonding, and either wire bonding or flip chip bonding may be used.

【0016】上記のように裸チップ状態のSAWフィル
ター10を実装した高周波回路モジュールは、該SAW
フィルター10側を金属ケース7で封止し、必要に応じ
て、該ケース7内に窒素ガスやアルゴンガス等の不活性
ガスを充填して耐環境信頼性を確保する。
The high frequency circuit module having the SAW filter 10 in the bare chip state as described above is
The side of the filter 10 is sealed with a metal case 7, and if necessary, the case 7 is filled with an inert gas such as nitrogen gas or argon gas to ensure environmental reliability.

【0017】このように、配線回路基板1の表面に、裸
チップ状態のSAWフィルター10を実装することによ
り、配線回路基板1のSAWフィルター実装部の配線回
路2を高密度化できるとともにモジュールの高さも低く
でき、金属ケース7を含めた全体を小型化できるので、
シールドされた高周波デバイスの小型,軽量化が図れ
る。
By mounting the SAW filter 10 in a bare chip state on the surface of the printed circuit board 1 as described above, the wiring circuit 2 in the SAW filter mounting portion of the printed circuit board 1 can be made high in density and the module height can be increased. Since the overall size including the metal case 7 can be reduced,
The shielded high frequency device can be made smaller and lighter.

【0018】図2は、本発明の第2実施例を示すもの
で、高周波デバイスの基体である配線回路基板として、
セラミック多層基板20を用いたものである。このセラ
ミック多層基板20は、各層毎に所定の導電路21と各
層相互接続のためのバイアホール22を備えたものであ
って、例えば、850℃〜1000℃の温度で焼成可能
な低温型セラミック多層基板を用いている。
FIG. 2 shows a second embodiment of the present invention. As a printed circuit board which is a base of a high frequency device,
The ceramic multilayer substrate 20 is used. The ceramic multilayer substrate 20 is provided with a predetermined conductive path 21 for each layer and a via hole 22 for interconnecting each layer, and is, for example, a low temperature type ceramic multilayer that can be fired at a temperature of 850 ° C. to 1000 ° C. The substrate is used.

【0019】多層化の方法としては、各層毎に所定の導
電路と各層相互接続のためのバイアホールとを備えたセ
ラミックグリーンシートを順次積層して加熱圧着後、同
時焼成して形成する方法、あるいは、コアーに予め配線
路を形成したセラミック配線基板に、予め下部導体と接
続するためのバイアホールを設けたセラミックグリーン
シートを貼りつけ、焼成後、上部導体を印刷して多層化
する方法、あるいは、絶縁ガラスを印刷,焼成し、その
上に導体路を形成する手順を順次繰り返すことで多層化
する方法等のいずれの方法でも良い。
As a multi-layering method, ceramic green sheets having predetermined conductive paths for each layer and via holes for interconnecting each layer are sequentially laminated, thermocompression-bonded, and simultaneously fired to form. Alternatively, a ceramic green board having a via hole for connecting to a lower conductor is attached to a ceramic wiring substrate having a wiring path formed in advance on a core, and after firing, an upper conductor is printed to form a multilayer structure, or Any method may be used, such as a method in which insulating glass is printed and fired, and a conductor path is formed on the insulating glass in order to form a multilayer structure.

【0020】本実施例は、以上のような方法にて、フィ
ルター機能を内蔵したセラミック多層基板20に、半導
体デバイス3、抵抗器,コンデンサ等の一般電子部品
4,4及び裸チップ状態のSAWフィルター10を実装
し、リード端子6を設けた高周波回路モジュールを金属
ケース7で封止して高周波デバイスを形成したものであ
る。
In this embodiment, the ceramic multilayer substrate 20 having a built-in filter function is used in the above-described method, the semiconductor device 3, the general electronic parts 4 and 4 such as resistors and capacitors, and the SAW filter in a bare chip state. The high frequency circuit module in which 10 is mounted and the lead terminals 6 are provided is sealed with a metal case 7 to form a high frequency device.

【0021】図3は、本発明の第3実施例を示すもの
で、上記同様のセラミック多層基板20の一面に、SA
Wフィルター実装用のキャビティ30を設け、該キャビ
ティ30内にSAWフィルター10を埋め込むようにし
て実装したものである。なお、他の構成は、上記図2と
同様に構成されているため、同一要素のものには同一符
号を付して、その詳細な説明は省略する。
FIG. 3 shows a third embodiment of the present invention, in which one surface of a ceramic multilayer substrate 20 similar to the above is provided with SA
A cavity 30 for mounting a W filter is provided, and the SAW filter 10 is embedded and mounted in the cavity 30. Since the other configurations are the same as those in FIG. 2, the same elements are designated by the same reference numerals and detailed description thereof will be omitted.

【0022】また、図4は、本発明の第4実施例を示す
もので、上記第3実施例に示した高周波デバイスにおい
て、高周波回路モジュールの略全体を覆う金属ケース7
に代えて、裸チップ状態のSAWフィルター10を埋め
込み実装するキャビティ30の開口部のみを覆う金属キ
ャップ31を設けたものである。
FIG. 4 shows a fourth embodiment of the present invention. In the high frequency device shown in the third embodiment, a metal case 7 covering substantially the entire high frequency circuit module is provided.
Instead, a metal cap 31 is provided to cover only the opening of the cavity 30 in which the SAW filter 10 in the bare chip state is embedded and mounted.

【0023】このように、裸チップ状態のSAWフィル
ター10を、セラミック多層基板20の一面に設けたキ
ャビティ30内にボンディングにて実装するとともに、
該キャビティ30の開口部のみを金属キャップ31で覆
うようにして高周波デバイスを形成することにより、さ
らに高周波デバイスの小型,軽量化を図ることができ
る。
As described above, the SAW filter 10 in a bare chip state is mounted by bonding in the cavity 30 provided on one surface of the ceramic multilayer substrate 20, and
By forming the high frequency device by covering only the opening of the cavity 30 with the metal cap 31, the size and weight of the high frequency device can be further reduced.

【0024】なお、基板に形成する回路や実装する部品
等は、高周波デバイスの目的に応じて適宜設計できるも
のであり、本発明は、様々な回路構成の高周波デバイス
に適用することが可能である。
The circuit formed on the substrate and the components to be mounted can be designed appropriately according to the purpose of the high frequency device, and the present invention can be applied to high frequency devices having various circuit configurations. ..

【0025】[0025]

【発明の効果】以上説明したように、本発明の高周波デ
バイスは、配線回路基板に、表面弾性波フィルターを裸
チップ状態でボンディング実装したから、従来品に比べ
て大幅な小型,軽量化が図れ、移動体通信端末機器等の
小型,軽量化及び高機能の促進に寄与できる。
As described above, in the high frequency device of the present invention, since the surface acoustic wave filter is bonded and mounted on the printed circuit board in a bare chip state, the size and weight can be significantly reduced as compared with the conventional product. In addition, it can contribute to the miniaturization and weight reduction of mobile communication terminal devices and the promotion of high functionality.

【図面の簡単な説明】[Brief description of drawings]

【図1】 本発明の高周波デバイスの第1実施例を示す
構造断面図である。
FIG. 1 is a structural cross-sectional view showing a first embodiment of a high frequency device of the present invention.

【図2】 同じく第2実施例を示す構造断面図である。FIG. 2 is a structural sectional view showing a second embodiment of the same.

【図3】 同じく第3実施例を示す構造断面図である。FIG. 3 is a structural sectional view showing a third embodiment of the same.

【図4】 同じく第4実施例を示す構造断面図である。FIG. 4 is a structural sectional view showing a fourth embodiment of the same.

【図5】 従来の高周波デバイスの一例を示す構造断面
図である。
FIG. 5 is a structural cross-sectional view showing an example of a conventional high frequency device.

【符号の説明】[Explanation of symbols]

1…配線回路基板 2…配線回路 3…半導体
デバイス 4…一般電子部品 6…リード端子 7…金属
ケース 10…裸チップ状態の表面弾性波(SAW)フィルター 20…セラミック多層基板 21…導電路 2
2…バイアホール 30…キャビティ 31…金属キャップ
DESCRIPTION OF SYMBOLS 1 ... Wiring circuit board 2 ... Wiring circuit 3 ... Semiconductor device 4 ... General electronic component 6 ... Lead terminal 7 ... Metal case 10 ... Bare-chip surface acoustic wave (SAW) filter 20 ... Ceramic multilayer substrate 21 ... Conductive path 2
2 ... Via hole 30 ... Cavity 31 ... Metal cap

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 配線回路基板の少くとも一面に、表面弾
性波フィルターを裸チップ状態でボンディング実装した
ことを特徴とする高周波デバイス。
1. A high-frequency device comprising a surface acoustic wave filter bonded and mounted in a bare chip state on at least one surface of a printed circuit board.
【請求項2】 前記配線回路基板が低温多層セラミック
系から成り、回路的にフィルター機能を内蔵するもので
あることを特徴とする請求項1記載の高周波デバイス。
2. The high frequency device according to claim 1, wherein the printed circuit board is made of a low-temperature multilayer ceramic system and has a filter function built in in a circuit manner.
【請求項3】 低温多層セラミック配線回路基板の少く
とも一面に、キャビティを少くとも1個形成するととも
に、該キャビティ内に、裸チップ状態の表面弾性波フィ
ルターを埋め込み、ボンディング実装したことを特徴と
する高周波デバイス。
3. A low-temperature multilayer ceramic printed circuit board having at least one cavity formed on at least one surface thereof, and a surface acoustic wave filter in a bare chip state being embedded and bonded in the cavity. High frequency device.
JP3822092A 1992-02-25 1992-02-25 High frequency device Pending JPH05235689A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3822092A JPH05235689A (en) 1992-02-25 1992-02-25 High frequency device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3822092A JPH05235689A (en) 1992-02-25 1992-02-25 High frequency device

Publications (1)

Publication Number Publication Date
JPH05235689A true JPH05235689A (en) 1993-09-10

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JP3822092A Pending JPH05235689A (en) 1992-02-25 1992-02-25 High frequency device

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6310422B1 (en) * 1998-03-12 2001-10-30 Matsushita Electric Industrial Co., Ltd. Surface acoustic wave filter
JP2002290184A (en) * 2001-03-28 2002-10-04 Seiko Epson Corp Surface acoustic wave device and its manufacturing method
US6570469B2 (en) * 2000-06-27 2003-05-27 Matsushita Electric Industrial Co., Ltd. Multilayer ceramic device including two ceramic layers with multilayer circuit patterns that can support semiconductor and saw chips
US6781484B2 (en) * 2002-01-09 2004-08-24 Alps Electric Co., Ltd. SAW filter module capable of being easily miniaturized
JP2008072748A (en) * 2007-10-26 2008-03-27 Tdk Corp High frequency module component containing surface acoustic wave element and its aggregate
JP2011130513A (en) * 2001-10-29 2011-06-30 Panasonic Corp Surface acoustic wave filter element, module, and communication device

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6310422B1 (en) * 1998-03-12 2001-10-30 Matsushita Electric Industrial Co., Ltd. Surface acoustic wave filter
US6570469B2 (en) * 2000-06-27 2003-05-27 Matsushita Electric Industrial Co., Ltd. Multilayer ceramic device including two ceramic layers with multilayer circuit patterns that can support semiconductor and saw chips
US6784765B2 (en) 2000-06-27 2004-08-31 Matsushita Electric Industrial Co., Ltd. Multilayer ceramic device
JP2002290184A (en) * 2001-03-28 2002-10-04 Seiko Epson Corp Surface acoustic wave device and its manufacturing method
JP2011130513A (en) * 2001-10-29 2011-06-30 Panasonic Corp Surface acoustic wave filter element, module, and communication device
US6781484B2 (en) * 2002-01-09 2004-08-24 Alps Electric Co., Ltd. SAW filter module capable of being easily miniaturized
JP2008072748A (en) * 2007-10-26 2008-03-27 Tdk Corp High frequency module component containing surface acoustic wave element and its aggregate
JP4582352B2 (en) * 2007-10-26 2010-11-17 Tdk株式会社 High frequency module component including surface acoustic wave device and assembly thereof

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