JPH05228361A - Device for vaporizing and supplying liquid material - Google Patents

Device for vaporizing and supplying liquid material

Info

Publication number
JPH05228361A
JPH05228361A JP11225092A JP11225092A JPH05228361A JP H05228361 A JPH05228361 A JP H05228361A JP 11225092 A JP11225092 A JP 11225092A JP 11225092 A JP11225092 A JP 11225092A JP H05228361 A JPH05228361 A JP H05228361A
Authority
JP
Japan
Prior art keywords
flow rate
mass flow
liquid material
liquid
controller
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11225092A
Other languages
Japanese (ja)
Other versions
JP3200464B2 (en
Inventor
Takeshi Kono
武志 河野
Kyoichi Ishikawa
亨一 石川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Stec KK
Original Assignee
Stec KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Stec KK filed Critical Stec KK
Priority to JP11225092A priority Critical patent/JP3200464B2/en
Publication of JPH05228361A publication Critical patent/JPH05228361A/en
Application granted granted Critical
Publication of JP3200464B2 publication Critical patent/JP3200464B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Landscapes

  • Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
  • Silicon Compounds (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)

Abstract

PURPOSE:To provide the device for vaporizing and supplying a liquid material which can always stably generate a prescribed flow rate of a vaporizing gas and stably supply this gas. CONSTITUTION:A liquid introducing pipe 8 which is connected to a liquid material source and has a mass flow rate controller 16 and a carrier gas introducing pipe 8 which is connected to a carrier gas source and has a mass flow rate controller 17 are connected to one end side of a vaporizing chamber 6 which directly vaporizes the liquid material by heating. On the other hand, a vaporizing gas leading out pipe 15 having a mass flow rate meter 18 is connected to the other end side of the vaporizing chamber 6. The mass flow rate controller 16 is controlled in accordance with the difference (a-b) between the output (a) of the mass flow rate meter and the output (b) of the mass flow rate controller.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、例えば半導体製造にお
いて用いる四塩化ケイ素(SiCl4 ) などのガスを、
液体材料を気化することによって供給する液体材料気化
供給装置に関する。
BACKGROUND OF THE INVENTION The present invention relates to a gas such as silicon tetrachloride (SiCl 4 ) used in semiconductor manufacturing.
The present invention relates to a liquid material vaporizing and supplying device that supplies a liquid material by vaporizing it.

【0002】[0002]

【従来の技術】前記液体材料気化供給装置として、液体
の原材料を収容した気化槽を恒温槽内に設け、前記原材
料内においてキャリアガスをバブリングさせることによ
り、所定の気化ガスを発生させるようにしたバブリング
方式の液体材料気化供給装置が知られている。
2. Description of the Related Art As the liquid material vaporization supply device, a vaporization tank containing a liquid raw material is provided in a constant temperature bath, and a predetermined vaporized gas is generated by bubbling a carrier gas in the raw material. A bubbling type liquid material vaporization and supply device is known.

【0003】そして、この種の液体材料気化供給装置に
おいては、気化槽内における温度、圧力およびキャリア
ガスの流量が定常状態にあるものと仮定して、所定流量
の反応ガスを発生させるようにしていた。
In this type of liquid material vaporization and supply apparatus, it is assumed that the temperature, pressure, and carrier gas flow rate in the vaporization tank are in a steady state, and a reaction gas of a predetermined flow rate is generated. It was

【0004】[0004]

【発明が解決しようとする課題】しかしながら、気化槽
内では気化ガスの発生によって気化熱が奪われるため、
気化槽内における温度、圧力をそれぞれ一定に保持する
ことは非常に困難であり、たとえ質量流量コントローラ
などによってキャリアガスの流量を一定に制御した場合
でも、所定流量の気化ガスを常に安定に発生させること
は困難であった。
However, since the heat of vaporization is taken away by the generation of vaporized gas in the vaporization tank,
It is extremely difficult to keep the temperature and pressure in the vaporization tank constant, and even if the carrier gas flow rate is controlled to be constant by a mass flow controller, etc., the vaporized gas at a predetermined flow rate is always generated stably. It was difficult.

【0005】本発明は、上述の事柄に留意してなされた
もので、その目的とするところは、所定流量の気化ガス
を常に安定して発生し、これを安定して供給することが
できる液体材料気化供給装置を提供することにある。
The present invention has been made in view of the above matters, and an object thereof is a liquid which can always stably generate a predetermined flow rate of vaporized gas and can stably supply the vaporized gas. It is to provide a material vaporization supply device.

【0006】[0006]

【課題を解決するための手段】上述の目的を達成するた
め、本発明に係る第1の液体材料気化供給装置は、加熱
により液体材料を直接気化させる気化室の一端側に、液
体材料源に接続されると共に液体流量制御器を備えた液
体導入管と、キャリアガス源に接続されると共に質量流
量コントローラを備えたキャリアガス導入管とを接続す
る一方、前記気化室の他端側に、質量流量計を備えた気
化ガス導出管を接続し、前記質量流量計の出力に基づい
て前記液体流量制御器を制御するようにしている。
In order to achieve the above-mentioned object, a first liquid material vaporizing and supplying device according to the present invention is provided with a liquid material source at one end side of a vaporizing chamber for directly vaporizing a liquid material by heating. A liquid introducing pipe having a liquid flow rate controller connected thereto and a carrier gas introducing pipe having a mass flow rate controller connected to a carrier gas source are connected, while the other end side of the vaporization chamber has a mass. A vaporized gas outlet pipe equipped with a flow meter is connected to control the liquid flow controller based on the output of the mass flow meter.

【0007】また、本発明に係る第2の液体材料気化供
給装置は、加熱により液体材料を直接気化させる気化室
の一端側に、液体材料源に接続されると共に液体流量制
御器を備えた液体導入管と、キャリアガス源に接続され
ると共に質量流量コントローラを備えたキャリアガス導
入管とを接続する一方、前記気化室の他端側に、質量流
量計を備えた気化ガス導出管を接続し、前記質量流量計
の出力と質量流量コントローラの出力との差に基づいて
前記液体流量制御器を制御するようにしている。
The second liquid material vaporization and supply device according to the present invention is a liquid which is connected to a liquid material source and has a liquid flow rate controller on one end side of a vaporization chamber for directly vaporizing the liquid material by heating. The introduction pipe and a carrier gas introduction pipe that is connected to a carrier gas source and that includes a mass flow rate controller are connected, while the other end side of the vaporization chamber is connected to a vaporized gas discharge pipe that includes a mass flow meter. The liquid flow controller is controlled based on the difference between the output of the mass flow meter and the output of the mass flow controller.

【0008】[0008]

【作用】上記第1または第2の液体材料気化供給装置の
何れにおいても、気化室に導入された液体材料が瞬間的
に気化するため、そのガス発生量は液体材料の導入量に
依存するだけである。その上、気化室内の温度管理も容
易であるため、液体材料を常に安定に気化させることが
できる。
In any of the first and second liquid material vaporization and supply devices described above, the liquid material introduced into the vaporization chamber is instantaneously vaporized, and therefore the gas generation amount thereof depends only on the liquid material introduction amount. Is. Moreover, since the temperature inside the vaporizing chamber can be easily controlled, the liquid material can always be vaporized stably.

【0009】そして、第1の液体材料気化供給装置にお
いては、気化したガスの流量を質量流量計によって測定
し、その流量変化に基づいて液体流量制御器を制御す
る。また、第2の液体材料気化供給装置においては、質
量流量計によって測定された気化したガスの流量と、質
量流量コントローラによって測定されたキャリアガスの
流量の差が所定の値になるように液体流量制御器を制御
する。従って、前記何れの液体材料気化供給装置におい
ても、所定流量の気化ガスを常に安定して供給すること
ができる。
In the first liquid material vaporizing and supplying apparatus, the flow rate of the vaporized gas is measured by the mass flow meter, and the liquid flow rate controller is controlled based on the change in the flow rate. Further, in the second liquid material vaporization and supply device, the liquid flow rate is adjusted so that the difference between the flow rate of the vaporized gas measured by the mass flow meter and the flow rate of the carrier gas measured by the mass flow rate controller becomes a predetermined value. Control the controller. Therefore, in any of the liquid material vaporization and supply devices described above, the vaporized gas at a predetermined flow rate can always be stably supplied.

【0010】[0010]

【実施例】以下、本発明の実施例を図面に基づいて説明
する。
Embodiments of the present invention will be described below with reference to the drawings.

【0011】図1は、本発明に係る液体材料気化供給装
置の一例を示し、この図において、1は例えばステンレ
ス鋼など熱伝導性および耐腐食性の良好な金属よりなる
パイプで、例えばアルミニウムなど熱伝導性の良好な素
材よりなるヒータブロック2に開設された貫通孔3内を
挿通するように設けられている。そして、ヒータブロッ
ク2内には、ヒータブロック2およびパイプ1を加熱す
るためのヒータ4が内蔵されている。
FIG. 1 shows an example of a liquid material vaporization and supply device according to the present invention. In this figure, reference numeral 1 denotes a pipe made of a metal having good thermal conductivity and corrosion resistance, such as stainless steel, for example, aluminum. It is provided so as to pass through the through hole 3 formed in the heater block 2 made of a material having good thermal conductivity. The heater block 2 and the heater 4 for heating the pipe 1 are built in the heater block 2.

【0012】前記パイプ1のヒータブロック2内の部分
には、熱伝導性および耐腐食性の良好な粉体5が充填さ
れていると共に、その上流側の入口側には液体導入管8
(後述する)が挿入してあって、気化室6に形成してあ
る。そして、粉体5としては、例えばステンレス鋼やチ
タンなどの金属またはSiCなどのセラミックスを、直
径が 100μm以上、好ましくは 120μm程度の粉体に形
成したものが用いられる。7A, 7Bは気化室6の両端
部近傍に設けられるメッシュ体で、粉体5が気化室6か
ら出ないようにするためにその網目の大きさは例えば20
μm程度にしてあり、下流側のメッシュ体7Bは,フィ
ルタとしても機能する。
A portion of the pipe 1 inside the heater block 2 is filled with powder 5 having good thermal conductivity and corrosion resistance, and a liquid introduction pipe 8 is provided on the upstream inlet side thereof.
(Described later) is inserted and formed in the vaporization chamber 6. As the powder 5, for example, a metal such as stainless steel or titanium or a ceramic such as SiC formed into a powder having a diameter of 100 μm or more, preferably about 120 μm is used. 7A and 7B are mesh bodies provided in the vicinity of both ends of the vaporization chamber 6, and their mesh size is, for example, 20 to prevent the powder 5 from coming out of the vaporization chamber 6.
The mesh body 7B on the downstream side also functions as a filter.

【0013】8は液体材料Lを気化室6内に導入するた
めのキャピラリのような細管9(内径が例えば 0.4m
m)を備えた液体導入管で、パイプ1の上流側にこれと
同心状に設けられている。この液体導入管8の上流側
は、液体流量制御器16(後述する)を介して液体材料源
(図外)に接続され、下流側は、上流側のメッシュ体7
Aを貫通してこのメッシュ体7Aよりも下流側、すなわ
ち、気化室6内に突設され、先端には粉体5の直径より
も小さい内径(例えば 0.1mm)を有する細径部10が形
成されており、この細径部10は粉体5が充填された部分
に挿入されている。
Reference numeral 8 is a thin tube 9 such as a capillary for introducing the liquid material L into the vaporization chamber 6 (having an inner diameter of 0.4 m, for example).
m) is a liquid introducing pipe provided on the upstream side of the pipe 1 and concentrically therewith. The upstream side of the liquid introduction pipe 8 is connected to a liquid material source (not shown) via a liquid flow rate controller 16 (described later), and the downstream side thereof is the upstream mesh body 7
A small-diameter portion 10 which penetrates A and is provided on the downstream side of the mesh body 7A, that is, in the vaporization chamber 6 and has an inner diameter (for example, 0.1 mm) smaller than the diameter of the powder 5 is formed at the tip. The small diameter portion 10 is inserted in the portion where the powder 5 is filled.

【0014】11は液体導入管8とパイプ1との接続部12
と気化室6との間においてパイプ1に接続されるブロッ
ク状の管継手で、熱伝導性および耐腐食性の良好な金属
(例えばステンレス鋼)よりなり、その上流側にはキャ
リアガス源(図外)に接続された曲がりくねったキャリ
アガス導入管13が接続されている。ここで用いられるキ
ャリアガスKとしては、H2 ,He,N2 などがある。
14はヒータブロック2、管継手11およびキャリアガス導
入管13を収容するための断熱構造のハウジングである。
15は気化室6に接続された気化ガス導出管である。
Reference numeral 11 denotes a connecting portion 12 between the liquid introducing pipe 8 and the pipe 1.
Is a block-shaped pipe joint connected to the pipe 1 between the vaporization chamber 6 and the vaporization chamber 6, and is made of a metal having good thermal conductivity and corrosion resistance (for example, stainless steel), and has a carrier gas source (Fig. A meandering carrier gas inlet pipe 13 connected to the outside is connected. The carrier gas K used here includes H 2 , He, N 2, and the like.
Reference numeral 14 denotes a housing having a heat insulating structure for housing the heater block 2, the pipe joint 11 and the carrier gas introducing pipe 13.
Reference numeral 15 is a vaporized gas outlet pipe connected to the vaporization chamber 6.

【0015】16は液体導入管8の上流側に設けられる液
体流量制御器で、例えば圧電アクチュエータなどによっ
て弁を開閉するように構成されたピエゾバルブよりな
り、圧電アクチュエータに直流電圧を印加すると、その
印加電圧の大きさに応じて弁が開閉され、この弁の開閉
の度合によって液体流量を制御するものである。
Reference numeral 16 is a liquid flow rate controller provided on the upstream side of the liquid introducing pipe 8 and is composed of, for example, a piezo valve configured to open and close the valve by a piezoelectric actuator or the like. The valve is opened and closed according to the magnitude of the voltage, and the liquid flow rate is controlled by the degree of opening and closing of the valve.

【0016】17はキャリアガス導入管13の上流側に設け
られる質量流量コントローラで、キャリアガスKの質量
流量を測定すると共に、ガス流量を制御するものであ
る。また、18は気化ガス導出管15の下流側に設けられる
質量流量計で、その下流側には例えば半導体製造装置
(図外)が接続されている。なお、気化ガス導出管15、
質量流量計18には、気化ガスが再冷却によって液化され
るのを防止するためのヒータ(図外)が設けられてい
る。
Reference numeral 17 denotes a mass flow controller provided on the upstream side of the carrier gas introduction pipe 13 for measuring the mass flow rate of the carrier gas K and controlling the gas flow rate. Further, 18 is a mass flow meter provided on the downstream side of the vaporized gas outlet pipe 15, for example, a semiconductor manufacturing apparatus (not shown) is connected on the downstream side thereof. The vaporized gas outlet pipe 15,
The mass flowmeter 18 is provided with a heater (not shown) for preventing the vaporized gas from being liquefied by recooling.

【0017】19はコンピュータなどの制御装置で、質量
流量計18の出力aおよび質量流量コントローラ17の出力
bを入力とし、液体流量制御器16への制御信号cを出力
するものである。
A control device 19 such as a computer receives the output a of the mass flow meter 18 and the output b of the mass flow controller 17, and outputs a control signal c to the liquid flow controller 16.

【0018】次に、上記構成の液体材料気化供給装置の
動作について説明すると、先ず、ヒータ4を発熱させて
気化室6内に充填された粉体5を所定の温度に加熱す
る。この状態において、質量流量コントローラ17によっ
て一定流量に制御されたキャリアガスKをキャリアガス
導入管13を介してパイプ1内に導入すると共に、液体流
量制御器16によって流量調整された液体材料Lを液体導
入管8を介して気化室6に導入する。液体材料Lは、細
径部10を経た後、加熱された粉体5内に導入されて粉体
5と接触する。この場合、その接触面積が大きいため、
液体材料Lは短時間のうちに気化して所望のガスGにな
る。
Next, the operation of the liquid material vaporizing and supplying device having the above-described structure will be described. First, the heater 4 is caused to generate heat to heat the powder 5 filled in the vaporizing chamber 6 to a predetermined temperature. In this state, the carrier gas K controlled to a constant flow rate by the mass flow rate controller 17 is introduced into the pipe 1 through the carrier gas introduction tube 13, and the liquid material L whose flow rate is adjusted by the liquid flow rate controller 16 is made into liquid. It is introduced into the vaporization chamber 6 via the introduction pipe 8. The liquid material L passes through the small-diameter portion 10 and then is introduced into the heated powder 5 and comes into contact with the powder 5. In this case, because the contact area is large,
The liquid material L is vaporized into a desired gas G in a short time.

【0019】そして、前記気化により発生したガスG
は、パイプ1およびメッシュ体7Aを経て気化室6内に
導入されているキャリアガスKによって速やかに下流側
に導出され、質量流量計18を介して下流側の半導体製造
装置(図外)に気化ガスGを供給することができる。
The gas G generated by the vaporization
Is rapidly led to the downstream side by the carrier gas K introduced into the vaporization chamber 6 through the pipe 1 and the mesh body 7A, and is vaporized to the semiconductor manufacturing apparatus (not shown) on the downstream side via the mass flow meter 18. The gas G can be supplied.

【0020】このとき、質量流量計18は、キャリアガス
Kのみが気化ガス導出管15を流れる場合と、気化ガスG
が流入した場合とで感度差を生じ、この感度差に対応し
て測定されるガスの流量も変化する。従って、この感度
差、すなわち、ガスの流量を一定に保つように、制御装
置19からの制御信号cによって、液体流量制御器16にお
ける弁の開度を調整することにより、常に所定流量の気
化ガスGを安定して供給することができる。
At this time, in the mass flowmeter 18, only the carrier gas K flows through the vaporized gas outlet pipe 15 and the vaporized gas G
There is a difference in sensitivity between when the gas flows in and the measured gas flow rate changes corresponding to this difference in sensitivity. Therefore, by adjusting the opening degree of the valve in the liquid flow rate controller 16 by the control signal c from the control device 19 so that this sensitivity difference, that is, the flow rate of the gas is kept constant, the vaporized gas of a predetermined flow rate is constantly maintained. G can be stably supplied.

【0021】すなわち、質量流量計18の出力aを制御装
置19に入力し、予め設定された流量値との比較を行う。
そして、出力値と設定流量値とが異なる場合には、前記
出力aが所定の値に保たれるように、制御装置19からの
制御信号cによって液体流量制御器16における圧電アク
チュエータに印加する直流電圧を調整して、液体材料L
の流量を制御するのである。このように、質量流量計18
の流量変化に基づいて液体流量制御器16の制御を行うこ
とにより、気化室6に導入される液体材料Lの流量調整
を自動化することができる。
That is, the output a of the mass flowmeter 18 is input to the controller 19 and compared with a preset flow rate value.
When the output value and the set flow rate value are different, the direct current applied to the piezoelectric actuator in the liquid flow rate controller 16 by the control signal c from the control device 19 so that the output a is maintained at a predetermined value. Adjust the voltage to adjust the liquid material L
It controls the flow rate of. Thus, the mass flowmeter 18
By controlling the liquid flow rate controller 16 based on the change in the flow rate, the flow rate of the liquid material L introduced into the vaporization chamber 6 can be automated.

【0022】上述の説明では、液体流量制御器16を制御
を、質量流量計18の出力aと制御装置19内に予め設定さ
れている流量設定値とを制御装置19において比較し、そ
の結果に基づいて行うようにしているが、これに代え
て、質量流量計18の出力aと質量流量コントローラ17の
出力bとを制御装置19に入力し、両者の差(a−b)、
すなわち、気化ガスGとキャリアガスKとにおける質量
流量の差を予め設定された流量値と比較するようにして
もよい。
In the above description, the liquid flow rate controller 16 is controlled by comparing the output a of the mass flow meter 18 with the flow rate set value preset in the control device 19 in the control device 19 and the result is compared. However, instead of this, the output a of the mass flow meter 18 and the output b of the mass flow controller 17 are input to the control device 19, and the difference (ab) between the two,
That is, the difference between the mass flow rates of the vaporized gas G and the carrier gas K may be compared with a preset flow rate value.

【0023】すなわち、前記出力差(a−b)と設定流
量値とが異なる場合には、この出力差(a−b)が所定
の値に保たれるように、制御装置19からの制御信号cに
よって流体流量制御器16における圧電アクチュエータに
印加する直流電圧を調整して、気化室6に導入される流
体流量を制御するのである。
That is, when the output difference (ab) is different from the set flow rate value, the control signal from the control device 19 is controlled so that the output difference (ab) is maintained at a predetermined value. The flow rate of the fluid introduced into the vaporization chamber 6 is controlled by adjusting the DC voltage applied to the piezoelectric actuator in the fluid flow controller 16 by c.

【0024】ところで、前記気化ガス導出管15にキャリ
アガスKのみが流れる場合、質量流量計18の出力aは、
質量流量コントローラ17の出力bと同じである。そし
て、気化ガス導出管15に気化ガスGが流入した場合、質
量流量計18で感度差が生ずるが、この感度差は液体材料
Lの導入量と相関関係にある。従って、この感度差を流
体流量制御器16において任意に制御することにより、任
意の流量の液体材料Lを気化室6に導入し、キャリアガ
スKの流量に関係なく、所望の気化ガス流量が得ること
ができる。
When only the carrier gas K flows through the vaporized gas outlet pipe 15, the output a of the mass flow meter 18 is
It is the same as the output b of the mass flow controller 17. Then, when the vaporized gas G flows into the vaporized gas outlet pipe 15, a sensitivity difference occurs in the mass flowmeter 18, and this sensitivity difference is correlated with the amount of the liquid material L introduced. Therefore, by arbitrarily controlling this difference in sensitivity in the fluid flow rate controller 16, the liquid material L having an arbitrary flow rate is introduced into the vaporization chamber 6, and a desired vaporized gas flow rate is obtained regardless of the flow rate of the carrier gas K. be able to.

【0025】すなわち、前記出力差は任意に設定でき、
しかも、コンピュータのような制御装置19を用いること
により、設定値を所望の時間で変化させたり、時間に対
して連続的に変化させたり、これらを組み合わせたりす
るなど、各種パターンに設定でき、これにより、液体材
料Lの気化室6への導入量を変化させることができる。
That is, the output difference can be set arbitrarily,
Moreover, by using the control device 19 such as a computer, it is possible to set various patterns such as changing the set value at a desired time, continuously changing it with respect to time, or combining these. Thereby, the amount of the liquid material L introduced into the vaporization chamber 6 can be changed.

【0026】なお、上記実施例においては、ヒータブロ
ック2、管継手11およびキャリアガス導入管13が断熱構
造のハウジング14内に設けてあるので、外周の温度に影
響されることなく、液体材料Lの気化が行われる。特
に、キャリアガス導入管13がヒータブロック2からの輻
射熱によって加熱され、キャリアガスKがある程度の温
度に保温されているので、気化ガスGとの温度差がほと
んどなく、その上、気化ガス導出管15、質量流量計18に
はヒータ(図外)を設けてあるので、気化ガスGが冷却
されて液化されるといったことが防止される。
In the above embodiment, since the heater block 2, the pipe joint 11 and the carrier gas introduction pipe 13 are provided in the housing 14 having a heat insulating structure, the liquid material L is not affected by the temperature of the outer circumference. Is vaporized. In particular, since the carrier gas introduction pipe 13 is heated by the radiant heat from the heater block 2 and the carrier gas K is kept at a certain temperature, there is almost no temperature difference from the vaporized gas G, and moreover, the vaporized gas outlet pipe. 15. Since the mass flowmeter 18 is provided with a heater (not shown), the vaporized gas G is prevented from being cooled and liquefied.

【0027】[0027]

【発明の効果】以上説明したように、本発明によれば、
気化室に導入された液体材料が瞬間的に気化するため、
そのガス発生量は液体材料の導入量に依存するだけであ
る。その上、気化室内の温度管理も容易であるため、液
体材料を安定に気化させることができる。
As described above, according to the present invention,
Since the liquid material introduced into the vaporization chamber is instantly vaporized,
The amount of gas generated only depends on the amount of liquid material introduced. Moreover, since the temperature inside the vaporizing chamber can be easily controlled, the liquid material can be vaporized stably.

【0028】そして、請求項1に記載した発明によれ
ば、気化したガスの流量を質量流量計によって測定し、
その流量変化に基づいて液体流量制御器を制御するよう
にしているので、所定流量の気化ガスを安定して常に発
生させることができ、これを常に安定して供給すること
ができる。
Further, according to the invention described in claim 1, the flow rate of the vaporized gas is measured by a mass flow meter,
Since the liquid flow rate controller is controlled on the basis of the change in the flow rate, the vaporized gas having a predetermined flow rate can always be stably generated, and this can be constantly and stably supplied.

【0029】また、請求項2に記載した発明によれば、
キャリアガスの流量を任意に変化させても、質量流量計
と質量流量コントローラとにおける出力差を一定に保持
することによって、所定流量の気化ガスを安定して常に
発生させることができ、これを常に安定して供給するこ
とができる。
According to the invention described in claim 2,
Even if the flow rate of the carrier gas is arbitrarily changed, by keeping the output difference between the mass flow meter and the mass flow controller constant, it is possible to constantly generate a vaporized gas at a predetermined flow rate, which is always maintained. It can be stably supplied.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明に係る液体材料気化供給装置の一例を示
す概略構成図である。
FIG. 1 is a schematic configuration diagram showing an example of a liquid material vaporization and supply device according to the present invention.

【符号の説明】[Explanation of symbols]

6…気化室、8…液体導入管、13…キャリアガス導入
管、15…気化ガス導出管、16…液体流量制御器、17…質
量流量コントローラ、18…質量流量計、L…液体材料、
G…気化ガス、a…質量流量計の出力、b…質量流量コ
ントローラの出力。
6 ... Vaporization chamber, 8 ... Liquid introduction pipe, 13 ... Carrier gas introduction pipe, 15 ... Vaporized gas discharge pipe, 16 ... Liquid flow controller, 17 ... Mass flow controller, 18 ... Mass flow meter, L ... Liquid material,
G ... Vaporized gas, a ... Output of mass flow meter, b ... Output of mass flow controller.

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 加熱により液体材料を直接気化させる気
化室の一端側に、液体材料源に接続されると共に液体流
量制御器を備えた液体導入管と、キャリアガス源に接続
されると共に質量流量コントローラを備えたキャリアガ
ス導入管とを接続する一方、前記気化室の他端側に、質
量流量計を備えた気化ガス導出管を接続し、前記質量流
量計の出力に基づいて前記液体流量制御器を制御するよ
うにしたことを特徴とする液体材料気化供給装置。
1. A liquid introduction pipe connected to a liquid material source and equipped with a liquid flow rate controller at one end of a vaporization chamber for directly vaporizing a liquid material by heating, and a mass flow rate connected to a carrier gas source. While connecting with a carrier gas introduction pipe equipped with a controller, a vaporized gas outlet pipe equipped with a mass flow meter is connected to the other end of the vaporization chamber, and the liquid flow rate control is performed based on the output of the mass flow meter. A liquid material vaporization and supply device characterized in that it is configured to control a vessel.
【請求項2】 加熱により液体材料を直接気化させる気
化室の一端側に、液体材料源に接続されると共に液体流
量制御器を備えた液体導入管と、キャリアガス源に接続
されると共に質量流量コントローラを備えたキャリアガ
ス導入管とを接続する一方、前記気化室の他端側に、質
量流量計を備えた気化ガス導出管を接続し、前記質量流
量計の出力と質量流量コントローラの出力との差に基づ
いて前記液体流量制御器を制御するようにしたことを特
徴とする液体材料気化供給装置。
2. A liquid introduction pipe connected to a liquid material source and provided with a liquid flow rate controller at one end of a vaporization chamber for directly vaporizing the liquid material by heating, and a mass flow rate connected to a carrier gas source. While connecting with a carrier gas introduction pipe provided with a controller, the other end of the vaporization chamber is connected with a vaporized gas discharge pipe provided with a mass flow meter, and the output of the mass flow meter and the output of the mass flow controller. The liquid material vaporizing and supplying device, wherein the liquid flow rate controller is controlled based on the difference between
JP11225092A 1991-08-27 1992-04-04 Liquid material vaporizer Expired - Fee Related JP3200464B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11225092A JP3200464B2 (en) 1991-08-27 1992-04-04 Liquid material vaporizer

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP3-242586 1991-08-27
JP24258691 1991-08-27
JP11225092A JP3200464B2 (en) 1991-08-27 1992-04-04 Liquid material vaporizer

Publications (2)

Publication Number Publication Date
JPH05228361A true JPH05228361A (en) 1993-09-07
JP3200464B2 JP3200464B2 (en) 2001-08-20

Family

ID=26451467

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11225092A Expired - Fee Related JP3200464B2 (en) 1991-08-27 1992-04-04 Liquid material vaporizer

Country Status (1)

Country Link
JP (1) JP3200464B2 (en)

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010247019A (en) * 2009-04-13 2010-11-04 Panasonic Corp Solvent gas producer, solvent gas treatment apparatus using the same, and operation method therefor
JP2010537796A (en) * 2007-05-11 2010-12-09 エスディーシー マテリアルズ インコーポレイテッド Gas supply system and gas supply method
US8859035B1 (en) 2009-12-15 2014-10-14 SDCmaterials, Inc. Powder treatment for enhanced flowability
US8865611B2 (en) 2009-12-15 2014-10-21 SDCmaterials, Inc. Method of forming a catalyst with inhibited mobility of nano-active material
US8969237B2 (en) 2011-08-19 2015-03-03 SDCmaterials, Inc. Coated substrates for use in catalysis and catalytic converters and methods of coating substrates with washcoat compositions
US9089840B2 (en) 2007-10-15 2015-07-28 SDCmaterials, Inc. Method and system for forming plug and play oxide catalysts
US9126191B2 (en) 2009-12-15 2015-09-08 SDCmaterials, Inc. Advanced catalysts for automotive applications
US9149797B2 (en) 2009-12-15 2015-10-06 SDCmaterials, Inc. Catalyst production method and system
US9156025B2 (en) 2012-11-21 2015-10-13 SDCmaterials, Inc. Three-way catalytic converter using nanoparticles
US9216406B2 (en) 2011-02-23 2015-12-22 SDCmaterials, Inc. Wet chemical and plasma methods of forming stable PtPd catalysts
US9427732B2 (en) 2013-10-22 2016-08-30 SDCmaterials, Inc. Catalyst design for heavy-duty diesel combustion engines
US9511352B2 (en) 2012-11-21 2016-12-06 SDCmaterials, Inc. Three-way catalytic converter using nanoparticles
US9517448B2 (en) 2013-10-22 2016-12-13 SDCmaterials, Inc. Compositions of lean NOx trap (LNT) systems and methods of making and using same
US9522388B2 (en) 2009-12-15 2016-12-20 SDCmaterials, Inc. Pinning and affixing nano-active material
US9586179B2 (en) 2013-07-25 2017-03-07 SDCmaterials, Inc. Washcoats and coated substrates for catalytic converters and methods of making and using same
US9687811B2 (en) 2014-03-21 2017-06-27 SDCmaterials, Inc. Compositions for passive NOx adsorption (PNA) systems and methods of making and using same

Cited By (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9023754B2 (en) 2005-04-19 2015-05-05 SDCmaterials, Inc. Nano-skeletal catalyst
US9599405B2 (en) 2005-04-19 2017-03-21 SDCmaterials, Inc. Highly turbulent quench chamber
US9132404B2 (en) 2005-04-19 2015-09-15 SDCmaterials, Inc. Gas delivery system with constant overpressure relative to ambient to system with varying vacuum suction
US9719727B2 (en) 2005-04-19 2017-08-01 SDCmaterials, Inc. Fluid recirculation system for use in vapor phase particle production system
US9216398B2 (en) 2005-04-19 2015-12-22 SDCmaterials, Inc. Method and apparatus for making uniform and ultrasmall nanoparticles
US9180423B2 (en) 2005-04-19 2015-11-10 SDCmaterials, Inc. Highly turbulent quench chamber
US8893651B1 (en) 2007-05-11 2014-11-25 SDCmaterials, Inc. Plasma-arc vaporization chamber with wide bore
US8906316B2 (en) 2007-05-11 2014-12-09 SDCmaterials, Inc. Fluid recirculation system for use in vapor phase particle production system
JP2010537796A (en) * 2007-05-11 2010-12-09 エスディーシー マテリアルズ インコーポレイテッド Gas supply system and gas supply method
US8956574B2 (en) 2007-05-11 2015-02-17 SDCmaterials, Inc. Gas delivery system with constant overpressure relative to ambient to system with varying vacuum suction
US9302260B2 (en) 2007-10-15 2016-04-05 SDCmaterials, Inc. Method and system for forming plug and play metal catalysts
US9737878B2 (en) 2007-10-15 2017-08-22 SDCmaterials, Inc. Method and system for forming plug and play metal catalysts
US9597662B2 (en) 2007-10-15 2017-03-21 SDCmaterials, Inc. Method and system for forming plug and play metal compound catalysts
US9089840B2 (en) 2007-10-15 2015-07-28 SDCmaterials, Inc. Method and system for forming plug and play oxide catalysts
US9592492B2 (en) 2007-10-15 2017-03-14 SDCmaterials, Inc. Method and system for forming plug and play oxide catalysts
US9186663B2 (en) 2007-10-15 2015-11-17 SDCmaterials, Inc. Method and system for forming plug and play metal compound catalysts
JP2010247019A (en) * 2009-04-13 2010-11-04 Panasonic Corp Solvent gas producer, solvent gas treatment apparatus using the same, and operation method therefor
US8992820B1 (en) 2009-12-15 2015-03-31 SDCmaterials, Inc. Fracture toughness of ceramics
US9522388B2 (en) 2009-12-15 2016-12-20 SDCmaterials, Inc. Pinning and affixing nano-active material
US9149797B2 (en) 2009-12-15 2015-10-06 SDCmaterials, Inc. Catalyst production method and system
US8859035B1 (en) 2009-12-15 2014-10-14 SDCmaterials, Inc. Powder treatment for enhanced flowability
US9126191B2 (en) 2009-12-15 2015-09-08 SDCmaterials, Inc. Advanced catalysts for automotive applications
US8865611B2 (en) 2009-12-15 2014-10-21 SDCmaterials, Inc. Method of forming a catalyst with inhibited mobility of nano-active material
US9308524B2 (en) 2009-12-15 2016-04-12 SDCmaterials, Inc. Advanced catalysts for automotive applications
US9332636B2 (en) 2009-12-15 2016-05-03 SDCmaterials, Inc. Sandwich of impact resistant material
US8877357B1 (en) 2009-12-15 2014-11-04 SDCmaterials, Inc. Impact resistant material
US8906498B1 (en) 2009-12-15 2014-12-09 SDCmaterials, Inc. Sandwich of impact resistant material
US8932514B1 (en) 2009-12-15 2015-01-13 SDCmaterials, Inc. Fracture toughness of glass
US9533289B2 (en) 2009-12-15 2017-01-03 SDCmaterials, Inc. Advanced catalysts for automotive applications
US9216406B2 (en) 2011-02-23 2015-12-22 SDCmaterials, Inc. Wet chemical and plasma methods of forming stable PtPd catalysts
US9433938B2 (en) 2011-02-23 2016-09-06 SDCmaterials, Inc. Wet chemical and plasma methods of forming stable PTPD catalysts
US9498751B2 (en) 2011-08-19 2016-11-22 SDCmaterials, Inc. Coated substrates for use in catalysis and catalytic converters and methods of coating substrates with washcoat compositions
US8969237B2 (en) 2011-08-19 2015-03-03 SDCmaterials, Inc. Coated substrates for use in catalysis and catalytic converters and methods of coating substrates with washcoat compositions
US9533299B2 (en) 2012-11-21 2017-01-03 SDCmaterials, Inc. Three-way catalytic converter using nanoparticles
US9511352B2 (en) 2012-11-21 2016-12-06 SDCmaterials, Inc. Three-way catalytic converter using nanoparticles
US9156025B2 (en) 2012-11-21 2015-10-13 SDCmaterials, Inc. Three-way catalytic converter using nanoparticles
US9586179B2 (en) 2013-07-25 2017-03-07 SDCmaterials, Inc. Washcoats and coated substrates for catalytic converters and methods of making and using same
US9566568B2 (en) 2013-10-22 2017-02-14 SDCmaterials, Inc. Catalyst design for heavy-duty diesel combustion engines
US9517448B2 (en) 2013-10-22 2016-12-13 SDCmaterials, Inc. Compositions of lean NOx trap (LNT) systems and methods of making and using same
US9427732B2 (en) 2013-10-22 2016-08-30 SDCmaterials, Inc. Catalyst design for heavy-duty diesel combustion engines
US9950316B2 (en) 2013-10-22 2018-04-24 Umicore Ag & Co. Kg Catalyst design for heavy-duty diesel combustion engines
US9687811B2 (en) 2014-03-21 2017-06-27 SDCmaterials, Inc. Compositions for passive NOx adsorption (PNA) systems and methods of making and using same
US10086356B2 (en) 2014-03-21 2018-10-02 Umicore Ag & Co. Kg Compositions for passive NOx adsorption (PNA) systems and methods of making and using same
US10413880B2 (en) 2014-03-21 2019-09-17 Umicore Ag & Co. Kg Compositions for passive NOx adsorption (PNA) systems and methods of making and using same

Also Published As

Publication number Publication date
JP3200464B2 (en) 2001-08-20

Similar Documents

Publication Publication Date Title
JP3200464B2 (en) Liquid material vaporizer
JP3607278B2 (en) Reactive liquid vaporizer and vapor deposition system for chemical vapor deposition process.
JP2789458B2 (en) Flow control device for liquid vaporization
JPS62107071A (en) Gaseous phase deposition apparatus
JP2004517396A (en) Pressure type mass flow controller system
KR920018833A (en) Chemical vapor growth apparatus
JP3828821B2 (en) Liquid material vaporizer
JPH06132226A (en) Vaporizer supplier for liquid raw material
JPH10337464A (en) Gasification device of liquid material
JP2007046084A (en) Vaporizer, and liquid vaporizing-feeding device using the same
JP3200457B2 (en) Liquid material vaporizer
JP2004263230A (en) Liquid material vaporizing and feeding device
JP3296611B2 (en) Liquid material vaporizer
JP2934883B2 (en) Gas generator by vaporization method
KR100322411B1 (en) Apparatus for vaporizing a liquid source
JP2003013233A (en) Device for vaporizing/feeding liquid raw material
JP2946347B2 (en) Vaporizer in liquid material supply system
JP3370173B2 (en) Vaporization flow controller
JP4052506B2 (en) Substrate processing equipment
JPS60244332A (en) Apparatus for gasification supply of condensible material
JPS59185772A (en) Control device for flow rate of evaporating gas in high melting metallic compound
JPH05337357A (en) Vaporizer in liquid material supply system
JPS61257232A (en) Method for generating gaseous liquid material
JPS602667A (en) Sublimating and supplying device of solid raw material
JPH07243591A (en) Liquid material vaporizing flow rate controller

Legal Events

Date Code Title Description
R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees