JPH05175614A - Optical semiconductor device - Google Patents
Optical semiconductor deviceInfo
- Publication number
- JPH05175614A JPH05175614A JP3345067A JP34506791A JPH05175614A JP H05175614 A JPH05175614 A JP H05175614A JP 3345067 A JP3345067 A JP 3345067A JP 34506791 A JP34506791 A JP 34506791A JP H05175614 A JPH05175614 A JP H05175614A
- Authority
- JP
- Japan
- Prior art keywords
- light
- emitting element
- light emitting
- light receiving
- receiving element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Semiconductor Lasers (AREA)
- Light Receiving Elements (AREA)
- Optical Couplings Of Light Guides (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は発光素子と受光素子とを
１つの筐体に内蔵した光半導体装置に関するものであ
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical semiconductor device in which a light emitting element and a light receiving element are incorporated in one housing.
【０００２】[0002]
【従来技術とその課題】半導体レーザ光源は軽量コンパ
クトであるため様々な機器で広く使用されている。しか
しながら半導体レーザには発光素子の素子発熱や素子劣
化によるレーザパワー変動という問題がある。そこでこ
れに対処して安定した光出力を得るための方法の一つと
して、半導体レーザ発光素子の光出力を取り出す前側端
面の反対側の後側端面から出力されるモニタ用の光を光
源チップ内に内蔵するモニタ用受光素子により強度モニ
タして、これを基にフィードバック駆動させることによ
り光出力を安定化させる方法、いわゆるＡＰＣ(Auto Po
wer Control)駆動が従来から知られている。2. Description of the Related Art Since a semiconductor laser light source is lightweight and compact, it is widely used in various devices. However, the semiconductor laser has a problem that the laser power fluctuates due to element heat generation and element deterioration of the light emitting element. Therefore, as one of the methods for dealing with this and obtaining a stable light output, the light for monitoring, which is output from the rear end face opposite to the front end face from which the light output of the semiconductor laser light emitting element is taken out, is provided in the light source chip. A method for stabilizing the optical output by monitoring the intensity with a built-in monitor light-receiving element and performing feedback drive based on this, a so-called APC (Auto Po
wer control) drive is conventionally known.
【０００３】半導体レーザ発光素子の射出光はその構造
上、積層面方向すなわちマウント面と平行方向に射出さ
れる。一方、モニタ用受光素子の受光面は素子表面に形
成されるため、受光素子に導光させるためには入射光は
マウント面に対して水平以外の角度を持たなければなら
ない。そのため従来は半導体レーザとモニタ用受光素子
のマウント面は９０度に近い角度をなしてマウントさせ
ているのが一般的である。このとき受光素子に入射した
モニタ用のレーザ光が受光素子で反射して反射光として
発光素子に戻ったりあるいは反射光が出力窓から漏出し
てゴースト光になることを防ぐため、モニタ受光素子を
僅かに傾斜させてマウントさせている。図６は従来の半
導体レーザ光源のパッケージ構造を示す構成図で、図
中、１は発光素子、４は受光素子、９はステム、１０は
金属製のキャップ、１１は透明ガラス板である。上記の
理由により受光素子４は傾斜マウントされている。Due to its structure, the light emitted from the semiconductor laser light emitting element is emitted in the direction of the stacking surface, that is, in the direction parallel to the mount surface. On the other hand, since the light receiving surface of the monitor light receiving element is formed on the element surface, the incident light must have an angle other than horizontal with respect to the mount surface in order to guide the light to the light receiving element. Therefore, conventionally, the mounting surfaces of the semiconductor laser and the light receiving element for monitoring are generally mounted at an angle close to 90 degrees. At this time, in order to prevent the laser light for monitoring incident on the light receiving element from being reflected by the light receiving element and returning to the light emitting element as reflected light or the reflected light leaking from the output window and becoming ghost light, It is mounted with a slight tilt. FIG. 6 is a configuration diagram showing a package structure of a conventional semiconductor laser light source. In the figure, 1 is a light emitting element, 4 is a light receiving element, 9 is a stem, 10 is a metal cap, and 11 is a transparent glass plate. For the above reason, the light receiving element 4 is tilt-mounted.
【０００４】ところが、このような実装構造を採用する
と、以下のような製造上の問題点が存在する。However, if such a mounting structure is adopted, there are the following manufacturing problems.
【０００５】（１） 半導体レーザの発光素子とモニタ
用受光素子のマウント面が、９０度に近い角度をもって
いるため、製造時のチップマウントの際に吸着コレット
が干渉しないように配置しなければならず、高密度実装
が困難である。(1) Since the mounting surfaces of the light emitting element of the semiconductor laser and the light receiving element for monitoring have an angle close to 90 degrees, they must be arranged so that the suction collet does not interfere during chip mounting during manufacturing. Therefore, high-density mounting is difficult.
【０００６】（２） マウント面が異なっているため、
製造時にチップと外部リードとの電気的接続を行うワイ
ヤボンディング装置は異なる装置を用いなければならな
い。もしくはパッケージを保持するステージ部に回転機
構を持たせなければならず、製造装置が複雑な機構とな
ってしまう。(2) Since the mounting surfaces are different,
A different wire bonding device must be used for making electrical connection between the chip and external leads during manufacturing. Alternatively, the stage unit that holds the package must have a rotation mechanism, which makes the manufacturing apparatus a complicated mechanism.
【０００７】（３） 受光素子のワイヤボンディング面
（１ｓｔボンディング）とリードのボンディング面（２
ｎｄボンディング）が平行面ではないため、どちらかの
面に対して合わせた場合、反対側のボンディング性が低
下する。そのため、ここでもパッケージを保持するステ
ージ部に１ｓｔ、２ｎｄボンディングを行う間に、キャ
ピラリに対する角度を９０度になるような調整する機構
部を持たせなければならず、製造装置が複雑な機構にな
るのは避けられない。(3) The wire bonding surface (1st bonding) of the light receiving element and the lead bonding surface (2)
(nd bonding) is not a parallel surface, the bonding properties on the opposite side are degraded when the two are bonded to either surface. Therefore, also in this case, it is necessary to provide a mechanism section for adjusting the angle with respect to the capillary to 90 degrees while performing the 1st and 2nd bonding on the stage section holding the package, and the manufacturing apparatus becomes a complicated mechanism. Is inevitable.
【０００８】一方、別の従来例として、特開平３−２１
４１１２号公報に開示されるＣＤ用光学式ピックアップ
のレーザカプラユニットの構成図を図７に示す。図中、
１は発光素子、１２はプリズム、１３は受光素子、１４
は半導体基板である。この種のピックアップでは、半導
体レーザ発光素子の放熱性向上のために設けられるシリ
コンサブマウントに受光素子を設けて小型化している。
これは例えば特開昭６１−８８５８８号公報，特開昭６
１−９０４８８号公報，特開昭６１−９５５９１号公報
等に開示されている。On the other hand, as another conventional example, JP-A-3-21
FIG. 7 shows a configuration diagram of a laser coupler unit of an optical pickup for CD disclosed in Japanese Patent No. 4112. In the figure,
1 is a light emitting element, 12 is a prism, 13 is a light receiving element, 14
Is a semiconductor substrate. In this type of pickup, a light receiving element is provided on a silicon submount provided to improve the heat dissipation of the semiconductor laser light emitting element to reduce the size.
This is disclosed, for example, in JP-A-61-88588 and JP-A-6-1988.
1-90488, JP-A-61-95591 and the like.
【０００９】この様な構成では、２チップ構成の従来例
に較べて１チップ化することにより装置の小型化を達成
することができ、しかもボンディング面は平面内に存在
するため、ワイヤボンディングを行う際にボンディング
装置に複雑な機構部を設ける必要もないが、以下のよう
な問題点が存在する。In such a structure, the size of the device can be reduced by making it into one chip as compared with the conventional example having a two-chip structure, and wire bonding is performed because the bonding surface exists in a plane. At this time, it is not necessary to provide a complicated mechanical section in the bonding apparatus, but there are the following problems.
【００１０】（１） 半導体レーザ発光素子からの射出
光は、受光部に対し平行方向に射出されるため、受光素
子に入射する光は発光素子の前側端面から放射される斜
入射光であり、そのため出力光の最も光強度の高い中心
部をモニタするためには受光部サイズを大型化しなけれ
ばならない。又、斜入射光をモニタしているため、発光
素子の素子ばらつきや発光素子のマウント時のばらつき
により放出光角度がばらついて、受光素子の検出出力値
のばらつきの要因となる。(1) Since the light emitted from the semiconductor laser light emitting element is emitted in the direction parallel to the light receiving portion, the light entering the light receiving element is obliquely incident light emitted from the front end face of the light emitting element, Therefore, the size of the light receiving portion must be increased in order to monitor the central portion of the output light having the highest light intensity. Further, since the oblique incident light is monitored, the emission light angle varies due to element variations of the light emitting element and variations when mounting the light emitting element, which causes variations in the detection output value of the light receiving element.
【００１１】（２） 半導体レーザ発光素子のサブマウ
ントに受光素子を設けているため、発光素子の発熱によ
りサブマウントが温度上昇して受光素子の温度特性によ
り感度特性が変化し、発光素子の光出力の変化なのかあ
るいは受光素子の温度上昇による変化かの識別が難しく
なり、正確な光出力のモニタが困難になる。これは特に
半導体レーザの光出力をアナログ的に使用する場合に大
きな問題となる。(2) Since the light receiving element is provided on the submount of the semiconductor laser light emitting element, the temperature of the submount rises due to heat generation of the light emitting element, and the sensitivity characteristic changes due to the temperature characteristic of the light receiving element. It is difficult to distinguish whether the change is due to the output change or the change due to the temperature rise of the light receiving element, which makes it difficult to accurately monitor the light output. This becomes a serious problem especially when the optical output of the semiconductor laser is used in an analog manner.
【００１２】本発明は上記課題を解決すべくなされたも
ので、容易に製造できる構成をとることにより低コスト
に光半導体装置を提供することを目的とする。The present invention has been made to solve the above problems, and an object of the present invention is to provide an optical semiconductor device at a low cost by adopting a structure that can be easily manufactured.
【００１３】[0013]
【課題を解決するための手段及び作用】上記課題を解決
する本発明は、光学窓部を有する筐体内に発光素子と受
光素子を内蔵し、前記発光素子の前方端面から射出した
光を前記窓部より出力する光半導体装置において、前記
発光素子のマウント面と前記受光素子のマウント面とが
平行状態をなし、前記発光素子の後方面から前記マウン
ト面と水平方向に発する光を反射して前記受光素子に導
くための反射光学部材を有することを特徴とするもので
ある。According to the present invention for solving the above problems, a light emitting element and a light receiving element are incorporated in a housing having an optical window portion, and light emitted from a front end face of the light emitting element is used for the window. In the optical semiconductor device that outputs from the section, the mounting surface of the light emitting element and the mounting surface of the light receiving element are in a parallel state, and the light emitted in the horizontal direction from the rear surface of the light emitting element is reflected by the mounting surface. It is characterized by having a reflective optical member for guiding to the light receiving element.
【００１４】この構成によって、発光素子の後側端面か
ら発した光は光学反射部材によって受光素子に確実に導
光される。又、発光素子と受光素子とを平行状態をなす
面にそれぞれマウントするため、マウントする際の吸着
コレットの干渉がなく、発光素子と受光素子とを近接し
てマウントすることができる。又、マウントされた発光
素子と受光素子の電気的接続部も平行状態をなす面に存
在するため、発光素子と受光素子のワイヤボンダ装置も
同一の装置を使用でき、又、ステージ部に複雑な機構を
持たせる事なくワイヤボンディングが可能となる。With this structure, the light emitted from the rear end surface of the light emitting element is reliably guided to the light receiving element by the optical reflecting member. Further, since the light emitting element and the light receiving element are mounted on the surfaces that are in parallel with each other, there is no interference of the suction collet when mounting, and the light emitting element and the light receiving element can be mounted close to each other. In addition, since the mounted light-emitting element and light-receiving element have electrical connections on the planes that are parallel to each other, the same wire bonder device for the light-emitting element and the light-receiving element can be used, and the stage has a complicated mechanism. Wire bonding is possible without having to have.
【００１５】[0015]
【実施例】［実施例１］図１は第１の実施例を表す光半
導体装置の構成を示す三面図である。同図において、１
は半導体レーザの発光素子、２は反射ミラー、３は封止
用ガラス板、４は光出力モニタ用の受光素子、５はセラ
ミックからなる筐体、６は電極、７は反射ミラーであ
る。なお、反射ミラー７をプリズムや凹面鏡等、光束を
所望の方向に折曲げる機能をもつ光学部品に置き換えて
も良い。この構成において、発光素子１の前側端面から
水平方向に射出したレーザ光は反射ミラー２で直角方向
に反射され、光学窓部である透明なガラス板３から外部
に出力される。又、発光素子１の後方端面から水平方向
に射出した光は反射ミラー７で直角方向に反射され受光
素子４に導光される。この受光素子４の検出出力は電極
６から取り出すことができ、ＡＰＣ制御等に利用され
る。[Embodiment 1] FIG. 1 is a trihedral view showing the structure of an optical semiconductor device according to a first embodiment. In the figure, 1
Is a light emitting element of a semiconductor laser, 2 is a reflection mirror, 3 is a glass plate for sealing, 4 is a light receiving element for optical output monitoring, 5 is a housing made of ceramic, 6 is an electrode, and 7 is a reflection mirror. The reflection mirror 7 may be replaced with an optical component such as a prism or a concave mirror having a function of bending the light beam in a desired direction. In this configuration, the laser light emitted horizontally from the front end face of the light emitting element 1 is reflected at a right angle by the reflection mirror 2 and is output to the outside from the transparent glass plate 3 which is the optical window. The light emitted horizontally from the rear end surface of the light emitting element 1 is reflected at a right angle by the reflection mirror 7 and guided to the light receiving element 4. The detection output of the light receiving element 4 can be taken out from the electrode 6 and used for APC control or the like.
【００１６】本実施例の装置の製造手順は以下の通りで
ある。まず筐体５に受光素子４をダイボンディングす
る。次にサブマウントにマウントされた発光素子１を筐
体５にダイボンディングする。このとき受光素子４の受
光面高さ（受光素子のチップ厚み）が発光素子１の発光
面高さよりも低くなるように、サブマウント厚みもしく
は筐体５の発光素子１のマウント部の高さもしくは受光
素子４の高さを決定する。本実施例では受光素子４の厚
みは２００μｍ、発光素子１のサブマウントの厚みは５
００μｍとした。The manufacturing procedure of the device of this embodiment is as follows. First, the light receiving element 4 is die-bonded to the housing 5. Next, the light emitting element 1 mounted on the submount is die-bonded to the housing 5. At this time, the submount thickness or the height of the mount portion of the light emitting element 1 of the housing 5 is set so that the height of the light receiving surface of the light receiving element 4 (chip thickness of the light receiving element) becomes lower than the height of the light emitting surface of the light emitting element 1. The height of the light receiving element 4 is determined. In this embodiment, the thickness of the light receiving element 4 is 200 μm, and the thickness of the submount of the light emitting element 1 is 5 μm.
It was set to 00 μm.
【００１７】次に発光素子１の電極部（チップ上面）と
筐体５の電極部６とを、更には受光素子４の電極（図示
せず）と筐体５の電極６とをワイヤボンダ装置を用いて
電気的に接続する。このとき筐体５をワイヤボンダ装置
のステージ部に、発光素子１の接続面とワイヤボンダ装
置のキャピラリが直交するようにセットすると、それぞ
れの接続面は平行状態つまり各接続面は常にキャピラリ
に対し直交する位置関係で高さのみが異なる状態とな
る。よって単純なステージのｘｙ方向への動きとキャピ
ラリのｚ方向への動きだけで発光素子１と受光素子４の
電気的接続を行なうことができる。Next, the electrode section of the light emitting element 1 (top surface of the chip) and the electrode section 6 of the housing 5, and further the electrode of the light receiving element 4 (not shown) and the electrode 6 of the housing 5 are connected to each other by a wire bonder device. Use to connect electrically. At this time, if the housing 5 is set on the stage portion of the wire bonder device so that the connection surface of the light emitting element 1 and the capillaries of the wire bonder device are orthogonal to each other, the respective connection surfaces are in a parallel state, that is, the connection surfaces are always orthogonal to the capillary. Only the height differs due to the positional relationship. Therefore, the light emitting element 1 and the light receiving element 4 can be electrically connected only by a simple movement of the stage in the xy direction and a movement of the capillary in the z direction.
【００１８】次に発光素子１の出力光を反射して筐体５
から外部に取り出すためのミラー２を発光素子１の前方
にマウントする。又、封止用ガラス板３の所定の位置に
反射ミラー７をマウントし接着剤にて固定する。そし
て、この反射ミラー７が固定された封止用ガラス板３を
発光素子１等がマウントされた筐体５に被せ、封止用シ
ール材によりパッケージ内部を気密に封止する。Next, the output light of the light emitting element 1 is reflected to reflect the housing 5
The mirror 2 for taking out from the outside is mounted in front of the light emitting element 1. Further, the reflection mirror 7 is mounted at a predetermined position on the sealing glass plate 3 and fixed with an adhesive. Then, the sealing glass plate 3 to which the reflection mirror 7 is fixed is covered on the housing 5 on which the light emitting element 1 and the like are mounted, and the inside of the package is hermetically sealed by a sealing sealing material.
【００１９】以上のように本実施例の光半導体装置は従
来ものと比較して、単純な製造方法で極めて薄型化され
る。又、発光素子の出力光の中心部（光軸）付近の光が
受光素子に導かれるため正確に光出力モニタを行うこと
ができる。又、発光素子と受光素子が分離されているた
め、受光素子は発光素子の発熱による影響が少ないとい
う利点も有する。As described above, the optical semiconductor device of this embodiment can be made extremely thin by a simple manufacturing method as compared with the conventional one. Further, since the light near the central portion (optical axis) of the output light of the light emitting element is guided to the light receiving element, it is possible to accurately monitor the light output. Further, since the light emitting element and the light receiving element are separated, the light receiving element has an advantage that the heat generated by the light emitting element is less affected.
【００２０】［実施例２］図２は第２実施例による光半
導体装置の構成を示す断面図であり、図１と同一の符号
は同一もしくは同等の部材を示す。本実施例は光学反射
部材としてプリズム８を用いてこれを筐体５の内部側壁
に固定したことを特徴とする。なお、プリズム８は反射
ミラーや凹面鏡に置き換えても良い。[Embodiment 2] FIG. 2 is a sectional view showing the structure of an optical semiconductor device according to a second embodiment, and the same reference numerals as those in FIG. 1 denote the same or equivalent members. The present embodiment is characterized in that a prism 8 is used as an optical reflection member and is fixed to the inner side wall of the housing 5. The prism 8 may be replaced with a reflection mirror or a concave mirror.
【００２１】製造手順は、半導体レーザの発光素子１及
び受光素子４をマウントしてワイヤボンディングし、次
にプリズム８をセラミックの筐体５の側面に接着剤によ
り固定する。そして封止用ガラス板３を筐体５に被せ、
封止用シール材によりパッケージ内を気密封止する。In the manufacturing procedure, the light emitting element 1 and the light receiving element 4 of the semiconductor laser are mounted and wire-bonded, and then the prism 8 is fixed to the side surface of the ceramic housing 5 with an adhesive. Then, the sealing glass plate 3 is covered on the housing 5,
The inside of the package is hermetically sealed with a sealing material for sealing.
【００２２】又、本実施例では筐体５の内部側壁にプリ
ズム８を貼付けたが、変形例として図３に示すように受
光素子４のマウントされる側面の筐体５に段差部を設
け、その段差部にプリズム８をマウントしても同様の作
用効果を得ることができる。Further, in this embodiment, the prism 8 is attached to the inner side wall of the housing 5, but as a modification, as shown in FIG. 3, a step portion is provided on the side surface of the housing 5 on which the light receiving element 4 is mounted. Even if the prism 8 is mounted on the stepped portion, the same effect can be obtained.
【００２３】［実施例３］図４は第３実施例による光半
導体装置を示す断面図である。本実施例は光学反射部材
であるプリズム８を受光素子４の上に直接固定したこと
を特徴とする。製造手順は、上記と同様に半導体レーザ
の発光素子１、受光素子４をマウントしてワイヤボンデ
ィングした後に、プリズム８を受光素子４の受光部上に
接着剤により貼りつける。次に封止用ガラス板３を筐体
５に被せ、封止用シール材によりパッケージ内部を気密
封止する。[Embodiment 3] FIG. 4 is a sectional view showing an optical semiconductor device according to a third embodiment. The present embodiment is characterized in that the prism 8 which is an optical reflection member is directly fixed on the light receiving element 4. In the manufacturing procedure, the light emitting element 1 and the light receiving element 4 of the semiconductor laser are mounted and wire bonded in the same manner as described above, and then the prism 8 is attached onto the light receiving portion of the light receiving element 4 with an adhesive. Next, the glass plate 3 for sealing is covered on the housing 5, and the inside of the package is hermetically sealed with a sealing material for sealing.
【００２４】［実施例４］図５は第４実施例による光半
導体装置を示す断面図及び正面図である。本実施例はセ
ラミックパッケージの代わりに金属製のキャンパッケー
ジを使用したものである。金属製ステム９に半導体レー
ザの発光素子１及び受光素子４を図５のようにマウント
し、各素子の接続用電極とステム９に設けられたリード
ピンとをワイヤボンディングする。次にプリズム８を受
光素子４の受光部上に接着剤により貼り付けた後に、金
属製のキャップ１０を被せ、放電溶接によりパッケージ
内を気密封止する。キャップ１０の光射出用の開口には
透明ガラス板１１が取り付けられ、光学窓部を形成して
いる。[Embodiment 4] FIG. 5 is a sectional view and a front view showing an optical semiconductor device according to a fourth embodiment. In this embodiment, a metal can package is used instead of the ceramic package. The light emitting element 1 and the light receiving element 4 of the semiconductor laser are mounted on the metal stem 9 as shown in FIG. 5, and the connection electrode of each element and the lead pin provided on the stem 9 are wire-bonded. Next, after the prism 8 is attached onto the light receiving portion of the light receiving element 4 with an adhesive, a metal cap 10 is covered and the package is hermetically sealed by discharge welding. A transparent glass plate 11 is attached to the light emitting opening of the cap 10 to form an optical window portion.
【００２５】［変形例］本発明は以上の実施例の形態に
は限定されず、本発明の技術思想の範囲内で種々の変形
が可能である。例えば発光素子と受光素子とを実質的に
同一面上にマウントしても良い。又、発光素子は半導体
レーザ以外にも高輝度発光ＬＥＤ等も用いることができ
る。[Modification] The present invention is not limited to the embodiments described above, and various modifications can be made within the scope of the technical idea of the present invention. For example, the light emitting element and the light receiving element may be mounted on substantially the same surface. In addition to the semiconductor laser, a high brightness LED or the like can be used as the light emitting element.
【００２６】[0026]
【発明の効果】本発明によれば、容易に製造できる構成
をとることにより低コストに光半導体装置を提供するこ
とができる。According to the present invention, an optical semiconductor device can be provided at low cost by adopting a structure that can be easily manufactured.
【図面の簡単な説明】[Brief description of drawings]
【図１】第１実施例の構成図である。FIG. 1 is a configuration diagram of a first embodiment.
【図２】第２実施例の構成図である。FIG. 2 is a configuration diagram of a second embodiment.
【図３】第２実施例の変形例の構成図である。FIG. 3 is a configuration diagram of a modification of the second embodiment.
【図４】第３実施例の構成図である。FIG. 4 is a configuration diagram of a third embodiment.
【図５】第４実施例の構成図である。FIG. 5 is a configuration diagram of a fourth embodiment.
【図６】従来の半導体レーザ光源パッケージの構成図で
ある。FIG. 6 is a configuration diagram of a conventional semiconductor laser light source package.
【図７】従来のレーザカプラの構成図である。FIG. 7 is a configuration diagram of a conventional laser coupler.
１ 発光素子 ２ 反射ミラー ３ 封止用ガラス板 ４ 受光素子 ５ 筐体 ６ パッケージ電極 ７ 反射ミラー ８ 反射プリズム ９ ステム １０ 金属製キャップ １１ ガラス板 DESCRIPTION OF SYMBOLS 1 Light emitting element 2 Reflection mirror 3 Glass plate for sealing 4 Light receiving element 5 Housing 6 Package electrode 7 Reflection mirror 8 Reflection prism 9 Stem 10 Metal cap 11 Glass plate
Claims (2)
光素子を内蔵し、前記発光素子の前方端面から射出した
光を前記窓部より出力する光半導体装置において、 前記発光素子のマウント面と前記受光素子のマウント面
とが平行状態をなし、前記発光素子の後方面から前記マ
ウント面と水平方向に発する光を反射して前記受光素子
に導くための反射光学部材を有することを特徴とする光
半導体装置。1. An optical semiconductor device in which a light emitting element and a light receiving element are built in a housing having an optical window portion, and light emitted from a front end face of the light emitting element is output from the window portion, a mount surface of the light emitting element. And a mount surface of the light receiving element are in parallel with each other, and a reflection optical member for reflecting light emitted from the rear surface of the light emitting element in the horizontal direction to the mount surface and guiding the light to the light receiving element. Optical semiconductor device.
を有する請求項１記載の光半導体装置。2. The optical semiconductor device according to claim 1, wherein the reflective optical member has a mirror or a prism.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3345067A JPH05175614A (en) | 1991-12-26 | 1991-12-26 | Optical semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3345067A JPH05175614A (en) | 1991-12-26 | 1991-12-26 | Optical semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05175614A true JPH05175614A (en) | 1993-07-13 |
Family
ID=18374064
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3345067A Pending JPH05175614A (en) | 1991-12-26 | 1991-12-26 | Optical semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05175614A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7326946B2 (en) | 2004-06-11 | 2008-02-05 | Eudyna Devices Inc. | Optical module having a reflector element and method of manufacturing the same |
| EP1976023A2 (en) | 2007-03-29 | 2008-10-01 | Eudyna Devices Inc. | Optical semiconductor module and light receiving element |
| WO2013168445A1 (en) * | 2012-05-08 | 2013-11-14 | 古河電気工業株式会社 | Semiconductor laser module |
| JP2017528920A (en) * | 2014-10-08 | 2017-09-28 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングＯｓｒａｍ Ｏｐｔｏ Ｓｅｍｉｃｏｎｄｕｃｔｏｒｓ ＧｍｂＨ | Laser component and manufacturing method thereof |
| JP2020537332A (en) * | 2017-10-09 | 2020-12-17 | オスラム オーエルイーディー ゲゼルシャフト ミット ベシュレンクテル ハフツングＯＳＲＡＭ ＯＬＥＤ ＧｍｂＨ | Optoelectronic semiconductor components, and methods for manufacturing optoelectronic semiconductor components |
| WO2022176992A1 (en) * | 2021-02-19 | 2022-08-25 | 京セラ株式会社 | Light emitting device |
| WO2022176987A1 (en) * | 2021-02-19 | 2022-08-25 | 京セラ株式会社 | Light emitting device |
| US11990728B2 (en) | 2020-05-26 | 2024-05-21 | Nichia Corporation | Light emitting device |
-
1991
- 1991-12-26 JP JP3345067A patent/JPH05175614A/en active Pending
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7326946B2 (en) | 2004-06-11 | 2008-02-05 | Eudyna Devices Inc. | Optical module having a reflector element and method of manufacturing the same |
| EP1976023A2 (en) | 2007-03-29 | 2008-10-01 | Eudyna Devices Inc. | Optical semiconductor module and light receiving element |
| US7807954B2 (en) | 2007-03-29 | 2010-10-05 | Eudyna Devices Inc. | Light receiving element with upper and side light receiving faces and an optical semiconductor module with the light receiving element and a light emitting element mounted on the same mounting unit |
| WO2013168445A1 (en) * | 2012-05-08 | 2013-11-14 | 古河電気工業株式会社 | Semiconductor laser module |
| JP2013235943A (en) * | 2012-05-08 | 2013-11-21 | Furukawa Electric Co Ltd:The | Semiconductor laser module |
| US9373932B2 (en) | 2012-05-08 | 2016-06-21 | Furukawa Electric Co., Ltd. | Semiconductor laser module |
| JP2017528920A (en) * | 2014-10-08 | 2017-09-28 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングＯｓｒａｍ Ｏｐｔｏ Ｓｅｍｉｃｏｎｄｕｃｔｏｒｓ ＧｍｂＨ | Laser component and manufacturing method thereof |
| DE112015004631B4 (en) | 2014-10-08 | 2022-01-13 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Laser component and method for its manufacture |
| JP2020537332A (en) * | 2017-10-09 | 2020-12-17 | オスラム オーエルイーディー ゲゼルシャフト ミット ベシュレンクテル ハフツングＯＳＲＡＭ ＯＬＥＤ ＧｍｂＨ | Optoelectronic semiconductor components, and methods for manufacturing optoelectronic semiconductor components |
| US11316075B2 (en) | 2017-10-09 | 2022-04-26 | Osram Oled Gmbh | Optoelectronic semiconductor component, and method for producing an optoelectronic semiconductor component |
| US11990728B2 (en) | 2020-05-26 | 2024-05-21 | Nichia Corporation | Light emitting device |
| WO2022176992A1 (en) * | 2021-02-19 | 2022-08-25 | 京セラ株式会社 | Light emitting device |
| WO2022176987A1 (en) * | 2021-02-19 | 2022-08-25 | 京セラ株式会社 | Light emitting device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6567435B1 (en) | VCSEL power monitoring system using plastic encapsulation techniques | |
| US6969204B2 (en) | Optical package with an integrated lens and optical assemblies incorporating the package | |
| US5130531A (en) | Reflective photosensor and semiconductor light emitting apparatus each using micro Fresnel lens | |
| US7467897B2 (en) | Light transmitting modules with optical power monitoring | |
| US20040190836A1 (en) | Package with a light emitting device | |
| JP7119271B2 (en) | Laser diode package modules, distance detectors, electronic devices | |
| KR20060090492A (en) | Optical scanner package and method for manufacturing the same | |
| JP3233837B2 (en) | Semiconductor laser device and optical pickup device | |
| KR100780522B1 (en) | Semiconductor laser | |
| JPH10321900A (en) | Optical module | |
| JPWO2002063730A1 (en) | Optical transmitter | |
| JPH1093133A (en) | Photodetction device with integrated mirror and its preparation | |
| JPH05175614A (en) | Optical semiconductor device | |
| US20040141699A1 (en) | Optical module | |
| JPH10132558A (en) | Optical semiconductor device | |
| JPH1022576A (en) | Semiconductor laser device | |
| JP2736197B2 (en) | Package for optical semiconductor device | |
| JP3295327B2 (en) | Bidirectional optical module | |
| JP2008041918A (en) | Optical unit and optical module | |
| JP3032376B2 (en) | Semiconductor laser device | |
| JP2006041085A (en) | Semiconductor laser device and optical pickup unit equipped therewith | |
| JPS62276515A (en) | Photoelectronic device and its sub-carrier | |
| JPH1069674A (en) | Optical pickup device | |
| KR102239822B1 (en) | Laser diode with surface mounting device type of multichannel operation | |
| JP2003075690A (en) | Transmitter and receiver |