JPH0514600A - Original reader - Google Patents

Original reader

Info

Publication number
JPH0514600A
JPH0514600A JP3157932A JP15793291A JPH0514600A JP H0514600 A JPH0514600 A JP H0514600A JP 3157932 A JP3157932 A JP 3157932A JP 15793291 A JP15793291 A JP 15793291A JP H0514600 A JPH0514600 A JP H0514600A
Authority
JP
Japan
Prior art keywords
photoelectric conversion
lens
semiconductor chip
conversion element
original
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3157932A
Other languages
Japanese (ja)
Inventor
Yoshinori Morita
啓徳 森田
Kenichi Nagatani
健一 永谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to JP3157932A priority Critical patent/JPH0514600A/en
Publication of JPH0514600A publication Critical patent/JPH0514600A/en
Pending legal-status Critical Current

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  • Facsimile Scanning Arrangements (AREA)

Abstract

PURPOSE:To improve the accuracy and sensitivity of reading. CONSTITUTION:The original reader consists of a light source 1, plural lenses 2 arranged linearly at a prescribed interval, plural semiconductor chips 3 having lots of photoelectric conversion elements 3a arranged linearly to be correspondent with each lens 2 one by one and a light shield plate 4 arranged among the semiconductor chips 3. Reflecting light from an original 5 is divided into plural blocks by the lenses 2 and radiates to the semiconductor chip 3 while being reduced, the length of each semiconductor chip 3 is reduced and the distance between a cut-out part and the photoelectric conversion element 3a in the vicinity of the cut-out part is extended. As a result, production of distortion due to exertion of a stress at cut-out to the photoelectric conversion element 3a in the vicinity of the cut-out part is avoided and the accuracy and sensitivity of original reading are enhanced.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、ファクシミリ等に用い
られる密着型の原稿読み取り装置に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a contact type document reading apparatus used for a facsimile or the like.

【0002】[0002]

【従来技術】近年、密着型イメージセンサ等の原稿読み
取り装置の開発が活発に行われている。
2. Description of the Related Art In recent years, document reading devices such as contact image sensors have been actively developed.

【0003】かかる従来の原稿読み取り装置は通常、図
5に示すように蛍光灯等から成る光源11と正立等倍光
学系のロッドレンズアレイ12と多数の光電変換素子1
3aを有する半導体チップ13とにより構成されてお
り、光源11が原稿15に投光し、その反射光をロッド
レンズアレイ12を介して半導体チップ13の各光電変
換素子13a上に照射させるとともに各光電変換素子1
3aに照射された光に対応する光電変換を起こさせるこ
とによって、原稿15の画像を読み取るようになってい
る。
In such a conventional document reading apparatus, as shown in FIG. 5, a light source 11 such as a fluorescent lamp, a rod lens array 12 of an erecting equal-magnification optical system, and a large number of photoelectric conversion elements 1 are usually used.
3a and a semiconductor chip 13 having a semiconductor chip 13a. The light source 11 projects light on the original 15, and the reflected light is applied to each photoelectric conversion element 13a of the semiconductor chip 13 via the rod lens array 12 and each photoelectric conversion element 13a. Conversion element 1
The image of the document 15 is read by causing photoelectric conversion corresponding to the light applied to the light 3a.

【0004】[0004]

【従来技術の問題点】しかしながらこの従来の原稿読み
取り装置においては原稿15からの反射光を半導体チッ
プ13上の光電変換素子13aに照射するロッドレンズ
アレイ12が正立等倍光学系であり、原稿15からの反
射光をそのまま等倍で光電変換素子13aに照射するた
め半導体チップ13上の光電変換素子13aは所定間隔
で原稿15と実質的に同一の長さ(例えばA4サイズの
場合は216mm)に直線状に配列することが必要とな
り、光電変換素子13aの配列が極めて長尺なものとな
る欠点を有していた。
However, in this conventional document reading apparatus, the rod lens array 12 that irradiates the photoelectric conversion element 13a on the semiconductor chip 13 with the reflected light from the document 15 is an erecting equal-magnification optical system, The photoelectric conversion elements 13a on the semiconductor chip 13 have substantially the same length as the original 15 at a predetermined interval (for example, 216 mm in the case of A4 size) because the reflected light from 15 is directly applied to the photoelectric conversion elements 13a. It is necessary to arrange the photoelectric conversion elements 13a linearly, and there is a drawback that the arrangement of the photoelectric conversion elements 13a becomes extremely long.

【0005】また前記光電変換素子13aを所定の間隔
で配列させた長尺の半導体チップ13は現在の半導体製
造技術においてその製造が極めて困難であることから通
常一般には一定寸法の半導体基板から長さが短い良品の
半導体チップ13を切り出し、該長さの短い半導体チッ
プ13を複数個直線状に配列することによって光電変換
素子13aを原稿15と実質的に同一の長さに配列させ
ている。
The long semiconductor chip 13 in which the photoelectric conversion elements 13a are arranged at a predetermined interval is extremely difficult to manufacture in the present semiconductor manufacturing technology, and therefore, generally, a semiconductor substrate having a fixed size is usually used. By cutting out a good semiconductor chip 13 having a short length, and arranging a plurality of semiconductor chips 13 having a short length in a straight line, the photoelectric conversion elements 13a are arranged in substantially the same length as the original 15.

【0006】しかしながら半導体基板から良品の半導体
チップ13を切り出す際、半導体チップ13上にはその
全域に亘って多数の光電変換素子13aが形成されてい
るため、切り出し時の応力が切り出し部近傍の光電変換
素子13aに付加されて歪みを発生させ、その結果、光
電変換素子13aに正確な光電変換を起こさせることが
できなくなって原稿の読み取り精度が低下するという欠
点を有していた。
However, when the non-defective semiconductor chip 13 is cut out from the semiconductor substrate, a large number of photoelectric conversion elements 13a are formed over the entire area of the semiconductor chip 13, so that the stress at the time of cutting out causes the photoelectric conversion element 13a to be near the cut-out portion. There is a drawback in that distortion is generated by being added to the conversion element 13a, and as a result, the photoelectric conversion element 13a cannot be caused to perform accurate photoelectric conversion, and the reading accuracy of the original document deteriorates.

【0007】尚、上記欠点を解消するために半導体チッ
プ13上に形成されている各光電変換素子13aの面積
を狭くし、半導体チップ切り出し部と切り出し部に近接
する光電変換素子13aとの距離を長くしておくことが
考えられる。
In order to solve the above-mentioned drawbacks, the area of each photoelectric conversion element 13a formed on the semiconductor chip 13 is reduced so that the distance between the semiconductor chip cutout and the photoelectric conversion element 13a adjacent to the cutout is reduced. It is possible to keep it long.

【0008】しかしながら各光電変換素子13aの面積
を狭くすると各光電変換素子13aにおける変換電気量
が小となり、原稿読み取りの感度が低下してしまうとい
う欠点を誘発してしまう。
However, when the area of each photoelectric conversion element 13a is narrowed, the amount of converted electricity in each photoelectric conversion element 13a becomes small, which causes a defect that the sensitivity of reading an original is lowered.

【0009】[0009]

【問題点を解決するための手段】本発明の原稿読み取り
装置は、光源と、所定の間隔で直線状に配列された複数
個のレンズと、各レンズに1対1に対応するように直線
状に配列された多数の光電変換素子を有する複数個の半
導体チップと、各半導体チップ間に配された遮光板とか
ら成ることを特徴とする。
A document reading apparatus according to the present invention comprises a light source, a plurality of lenses linearly arranged at predetermined intervals, and a linear shape so that each lens has a one-to-one correspondence. It is characterized by comprising a plurality of semiconductor chips having a large number of photoelectric conversion elements arranged in a matrix and a light shielding plate arranged between the respective semiconductor chips.

【0010】また本発明の原稿読み取り装置は、隣接す
る2個のレンズ間に各レンズから等距離となる位置で、
且つレンズの配列方向と平行に光源を配したことを特徴
とする。
Further, in the document reading apparatus of the present invention, at a position where it is equidistant from each lens between two adjacent lenses,
In addition, the light source is arranged in parallel with the arrangement direction of the lenses.

【0011】[0011]

【実施例】以下、本発明の実施例を添付図面に基づいて
説明する。
Embodiments of the present invention will be described below with reference to the accompanying drawings.

【0012】図1は本発明の原稿読み取り装置の一実施
例を示す分解斜視図、図2は図1の原稿読み取り装置を
R方向から見た側面図であり、図中の1は光源、2はレ
ンズ、3は多数の光電変換素子3aを有する半導体チッ
プ、4は遮光板、5は原稿である。
FIG. 1 is an exploded perspective view showing an embodiment of the document reading apparatus of the present invention, and FIG. 2 is a side view of the document reading apparatus shown in FIG. 1 viewed from the direction R. In FIG. Is a lens, 3 is a semiconductor chip having a large number of photoelectric conversion elements 3a, 4 is a light blocking plate, and 5 is an original.

【0013】前記光源1は発光ダイオードや蛍光灯等か
ら成り、原稿5の斜め下方に原稿5に対し平行となるよ
うに配置されている。
The light source 1 is composed of a light emitting diode, a fluorescent lamp or the like, and is arranged obliquely below the original 5 so as to be parallel to the original 5.

【0014】前記光源1は原稿5の下面に対し斜めに投
光し、その反射光を光電変換素子3aに照射することに
よって原稿5の画像情報を光電変換素子3aに伝達させ
る作用を為す。
The light source 1 projects light obliquely to the lower surface of the original 5 and irradiates the photoelectric conversion element 3a with the reflected light, thereby transmitting the image information of the original 5 to the photoelectric conversion element 3a.

【0015】また前記光源1が投光する原稿5の下方に
は複数個のレンズ2が原稿5から所定の距離Xを隔てた
位置に所定の隣接距離Yをもって直線状に配されてお
り、該各レンズ2は原稿5で反射する光源1の光をA〜
Hのブロックに分割するとともに各分割したブロックの
反射光を半導体チップ3上の光電変換素子3aに縮小照
射させる作用を為す。
A plurality of lenses 2 are linearly arranged below the original document 5 projected by the light source 1 at a predetermined distance X from the original document 5 with a predetermined adjacent distance Y. Each lens 2 reflects the light of the light source 1 reflected by the original 5 from A to
It has a function of dividing into H blocks and reducing the reflected light of each divided block to the photoelectric conversion element 3a on the semiconductor chip 3.

【0016】尚、前記レンズ2はガラス、樹脂等の透明
凸状体から成り、例えば焦点距離(f.l.)がf.
l.=3.429mmのものが好適に使用される。
The lens 2 is made of a transparent convex material such as glass or resin, and has a focal length (fl) of f.
l. = 3.429 mm is preferably used.

【0017】また前記レンズ2は従来の如き高価なロッ
ドレンズアレイを使用するのでなく、極めて安価な透明
凸状体を使用することから製品としての原稿読み取り装
置を安価なものとなすことができる。
Further, since the lens 2 does not use an expensive rod lens array as in the prior art, but an extremely inexpensive transparent convex body is used, the original reading device as a product can be made inexpensive.

【0018】前記直線状に配されたレンズ2の下方には
また上面に多数の光電変換素子3aを有する半導体チッ
プ3が所定の距離Zを隔ててレンズ2と1対1に対応す
る数だけ直線状に配されている。
Below the linearly arranged lens 2, a semiconductor chip 3 having a large number of photoelectric conversion elements 3a on the upper surface is separated by a predetermined distance Z and is linearly arranged by a number corresponding to the lens 2 in a one-to-one correspondence. It is arranged in a shape.

【0019】前記各半導体チップ3の上面に形成された
光電変換素子3aはレンズ2を介して照射される原稿5
における反射光を所定の電気信号に変換する作用を為
し、これによって原稿5の画像情報が電気信号に変換さ
れる。
The photoelectric conversion element 3a formed on the upper surface of each semiconductor chip 3 is an original document 5 which is irradiated through the lens 2.
The function of converting the reflected light in the above into an electric signal is converted, whereby the image information of the document 5 is converted into an electric signal.

【0020】尚、この場合、原稿5からの反射光はレン
ズ2によってA〜Hのブロックに分割されるとともに縮
小されたものとなっているため、上面に光電変換素子3
aを有する半導体チップ3はその各々の形状が長さの短
いものであってよく、また、各半導体チップ3はその一
端を接触させて直線状に長尺に配列する必要もない。従
って、従来の如き光電変換素子3aを原稿5と実質的に
同一長さとするように複数個の半導体チップ3を直線状
に長尺に配列する必要もない。
In this case, since the reflected light from the original 5 is divided by the lens 2 into blocks A to H and reduced, the photoelectric conversion element 3 is formed on the upper surface.
The semiconductor chip 3 having a may have a short shape in each shape, and it is not necessary that the semiconductor chips 3 are arranged linearly in a long shape by contacting one end thereof. Therefore, it is not necessary to arrange a plurality of semiconductor chips 3 linearly in a long length so that the photoelectric conversion element 3a has the same length as the original 5 as in the conventional case.

【0021】また同時に上面に光電変換素子3aを有す
る半導体チップ3は全ての光電変換素子3aの均一とす
るためにその一端を接触させて直線状に配列させる必要
がないことから、半導体基板の切り出しによって上面に
多数の光電変換素子3aを有する半導体チップ3を得る
際、切り出し部と該切り出し部近傍の光電変換素子3a
との距離を長くすることができ、その結果、切り出し部
近傍の光電変換素子3aに切り出し時の応力が付加され
て歪みを発生することはほとんど無く、これによって光
電変換素子3aに正確な光電変換を起こさせて原稿5の
読み取り精度を大幅に向上させることもできる。
At the same time, since the semiconductor chip 3 having the photoelectric conversion elements 3a on the upper surface does not need to be in contact with one end and arranged in a straight line in order to make all the photoelectric conversion elements 3a uniform, the semiconductor substrate is cut out. When obtaining the semiconductor chip 3 having a large number of photoelectric conversion elements 3a on the upper surface by the cutout portion and the photoelectric conversion element 3a near the cutout portion
It is possible to increase the distance between the photoelectric conversion element 3a and the photoelectric conversion element 3a in the vicinity of the cutout portion, and the stress at the time of cutting is hardly generated to cause distortion. It is also possible to significantly improve the reading accuracy of the document 5 by causing the error.

【0022】更には半導体チップ3上の光電変換素子3
aに照射される原稿5からの反射光はレンズ2によって
縮小されているため、光電変換素子3aの面積を狭くし
てもその変換電気量を大と成すことができ、その結果、
原稿読み取りの感度を高いものとなすことができる。
Further, the photoelectric conversion element 3 on the semiconductor chip 3
Since the reflected light from the document 5 irradiated on a is reduced by the lens 2, the converted amount of electricity can be large even if the area of the photoelectric conversion element 3a is narrowed.
The sensitivity of reading the original can be made high.

【0023】尚、前記上面に多数の光電変換素子3aを
有する半導体チップ3は、ガラスやセラミック等の絶縁
基板上に接着材を介して固定されており、各半導体チッ
プ3の各電極は基板上に形成した外部駆動回路に接続さ
れるアルミニウムや金等から成る導体パターンにボンデ
ィングワイヤを介して電気的に接続されている。
The semiconductor chip 3 having a large number of photoelectric conversion elements 3a on the upper surface is fixed on an insulating substrate such as glass or ceramic with an adhesive, and each electrode of each semiconductor chip 3 is on the substrate. Is electrically connected via a bonding wire to a conductor pattern made of aluminum, gold, or the like, which is connected to the external drive circuit formed in the above.

【0024】また前記半導体チップ3の隣接間には遮光
板4が配されており、該遮光板4は各々の半導体チップ
3に不要な光が照射されて各半導体チップ3の光電変換
素子3aに不必要な光電変換が行われるのを有効に防止
する作用を為し、これによって各半導体チップ3の光電
変換素子3aには原稿5の画像情報に対応した正確な光
電変換を行わせることが可能となる。
A light-shielding plate 4 is disposed between the semiconductor chips 3 adjacent to each other. The light-shielding plate 4 irradiates each semiconductor chip 3 with unnecessary light so that the photoelectric conversion element 3a of each semiconductor chip 3 is illuminated. The photoelectric conversion element 3a of each semiconductor chip 3 can be made to perform accurate photoelectric conversion corresponding to the image information of the document 5 by effectively acting to prevent unnecessary photoelectric conversion. Becomes

【0025】尚、前記遮光板4は光を遮断するものであ
れば如何なる材料より成ってもよい。
The light shielding plate 4 may be made of any material as long as it blocks light.

【0026】かくして上述した原稿読み取り装置は光源
1が原稿5に投光し、その反射光をレンズ2を介して半
導体チップ3の上面に形成された光電変換素子3aに照
射させ、各光電変換素子3aに照射させた光に対応する
光電変換を起こさせることによって原稿読み取り装置と
して機能する。
Thus, in the above-described document reading apparatus, the light source 1 projects the light on the document 5, and the reflected light is applied to the photoelectric conversion element 3a formed on the upper surface of the semiconductor chip 3 through the lens 2 and each photoelectric conversion element. It functions as a document reading device by causing photoelectric conversion corresponding to the light applied to 3a.

【0027】尚、上述した原稿読み取り装置においては
レンズ2が凸状を成しているため、図4に示す如く、原
稿5からの反射光がレンズ2にθの角度で入射すると、
θの値が大きくなるに伴ってレンズ2を透過した反射光
の光量が低減されてむらを生じ、これに伴って半導体チ
ップ3上の光電変換素子3aにおける原稿5の画像情報
の読み取り精度が低下してしまう恐れがある。
Since the lens 2 has a convex shape in the above-mentioned document reading apparatus, when the reflected light from the document 5 enters the lens 2 at an angle of θ as shown in FIG.
As the value of θ becomes larger, the amount of reflected light that has passed through the lens 2 is reduced to cause unevenness, and accordingly, the accuracy of reading the image information of the original 5 on the photoelectric conversion element 3a on the semiconductor chip 3 is reduced. There is a risk of doing it.

【0028】しかしながら、この場合、隣接する2個の
レンズ2間に各レンズ2から等距離となる位置で、且つ
レンズ2の配列方向と平行に光源1を配することで上述
の問題を解消することができる。
However, in this case, the above-mentioned problem is solved by disposing the light source 1 between two adjacent lenses 2 at a position equidistant from each lens 2 and parallel to the arrangement direction of the lenses 2. be able to.

【0029】即ち、図5に示すように隣接するレンズ2
間に各々のレンズ2から等距離となる位置に光源1を配
すれば光源1の光量が多い部分に対応する原稿5からの
反射光はレンズ2に大きなθの角度で入射され、また光
源1の光量が少ない部分に対応する原稿5からの反射光
はレンズ2に小さなθの角度で入射されることとなり、
その結果、レンズ2に入射される反射光の入射角度によ
って発生する光量むらはレンズ2に入射する反射光の光
量で相補的に打ち消し合い、これによって半導体チップ
3上面の光電変換素子3aには実質的に均一な光が照射
され、各光電変換素子3aに正確な光電変換を起こさせ
て原稿の画像情報の読み取り精度を向上させることが可
能となる。
That is, the adjacent lenses 2 as shown in FIG.
If the light source 1 is arranged at a position equidistant from each lens 2 between them, the reflected light from the document 5 corresponding to the portion of the light source 1 having a large amount of light is incident on the lens 2 at a large angle θ, and the light source 1 The reflected light from the original 5 corresponding to the portion having a small amount of light is incident on the lens 2 at a small angle θ.
As a result, the unevenness in the amount of light generated depending on the incident angle of the reflected light entering the lens 2 is complementarily canceled by the amount of the reflected light entering the lens 2, so that the photoelectric conversion element 3a on the upper surface of the semiconductor chip 3 is substantially compensated. It is possible to improve the accuracy of reading image information of a document by causing each photoelectric conversion element 3a to perform accurate photoelectric conversion by being uniformly irradiated with uniform light.

【0030】尚、本発明においては原稿5とレンズ2の
距離及びレンズ2と半導体チップ3の距離を可変するこ
とによって原稿5の読み取り画素密度を可変することが
でき、例えば、レンズ2の焦点距離(f.l.)をf.
l.=3.429mmとしたとき、原稿5とレンズ2の
距離Xを12mm、レンズ2と半導体チップ3の距離Z
を4.8mmとすれば原稿5の読み取り画素密度は8d
ot/mmとなり、また原稿5とレンズ2の距離Xを
7.715mm、レンズ2と半導体チップ3の距離Zを
6.172mmとすれば原稿5の読み取り画素密度は1
6dot/mmとなる。従って、同一のレンズ、同一の
半導体チップをそのまま用い、原稿とレンズの距離、レ
ンズと半導体チップの距離を変えることによって原稿の
読み取り画素密度を所定の任意の値に変更選択すること
が可能となる。
In the present invention, the read pixel density of the original 5 can be changed by changing the distance between the original 5 and the lens 2 and the distance between the lens 2 and the semiconductor chip 3. For example, the focal length of the lens 2 can be changed. (Fl) to f.
l. = 3.429 mm, the distance X between the original 5 and the lens 2 is 12 mm, and the distance Z between the lens 2 and the semiconductor chip 3
Is 4.8 mm, the reading pixel density of the original 5 is 8d.
When the distance X between the original 5 and the lens 2 is 7.715 mm and the distance Z between the lens 2 and the semiconductor chip 3 is 6.172 mm, the read pixel density of the original 5 is 1.
It becomes 6 dots / mm. Therefore, by using the same lens and the same semiconductor chip as they are, it is possible to change and select the reading pixel density of the document to a predetermined arbitrary value by changing the distance between the document and the lens and the distance between the lens and the semiconductor chip. .

【0031】[0031]

【発明の効果】本発明の原稿読み取り装置は、光源と、
所定の間隔で直線状に配列された複数個のレンズと、各
レンズに1対1に対応するように直線状に配列された多
数の光電変換素子を有する複数個の半導体チップと、各
半導体チップ間に配された遮光板とで形成したことか
ら、原稿からの反射光はレンズによって複数のブロック
に分割されるとともに縮小された状態で上面に光電変換
素子を有する半導体チップに照射されるため各半導体チ
ップはその各々の形状が長さの短い小型のものであって
よく、また各半導体チップはその一端を接触させて直線
状に長尺に配列する必要もない。
The document reading apparatus of the present invention includes a light source,
A plurality of lenses linearly arranged at a predetermined interval, a plurality of semiconductor chips having a large number of photoelectric conversion elements linearly arranged so that each lens has a one-to-one correspondence, and each semiconductor chip Since it is formed with a light-shielding plate arranged between them, the reflected light from the document is divided into a plurality of blocks by the lens and is irradiated to the semiconductor chip having the photoelectric conversion element on the upper surface in a reduced state. The semiconductor chips may be small ones each of which has a short length, and it is not necessary for the respective semiconductor chips to be arranged linearly in a long shape by contacting one end thereof.

【0032】また各半導体チップの上面に形成された光
電変換素子に照射される原稿からの反射光はレンズによ
って縮小されているため、光電変換素子の面積を狭くし
てもその変換電気量を大と成すことができ、その結果、
原稿読み取りの感度を高いものとなすことができる。
Further, since the reflected light from the original which is irradiated on the photoelectric conversion element formed on the upper surface of each semiconductor chip is reduced by the lens, even if the area of the photoelectric conversion element is reduced, the converted electricity amount is large. And as a result,
The sensitivity of reading the original can be made high.

【0033】更には、半導体チップの上面に形成された
光電変換素子は狭い面積であっても変換電気量が大であ
ることから光電変換素子の面積を狭くした場合、半導体
基板の切り出しによって上面に多数の光電変換素子を有
する半導体チップを得る際、切り出し部と該切り出し部
近傍の光電変換素子との距離が長くなり、その結果、切
り出し部近傍の光電変換素子に切り出し時の応力が付加
されて歪みを発生することはほとんど無く、これによっ
てすべての光電変換素子に正確な光電変換を起こさせて
原稿の読み取り精度を大幅に向上させることもできる。
Further, since the photoelectric conversion element formed on the upper surface of the semiconductor chip has a large amount of converted electricity even if it has a small area, when the area of the photoelectric conversion element is narrowed, the semiconductor substrate is cut out and the photoelectric conversion element is formed on the upper surface. When obtaining a semiconductor chip having a large number of photoelectric conversion elements, the distance between the cutout portion and the photoelectric conversion element near the cutout portion becomes long, and as a result, the stress at the time of cutting is added to the photoelectric conversion element near the cutout portion. Almost no distortion is generated, so that accurate photoelectric conversion can be caused in all photoelectric conversion elements to significantly improve the reading accuracy of the original.

【0034】また更には前記半導体チップの隣接間に遮
光板が配されていることから各々の半導体チップに不要
な光が照射されて該半導体チップの上面に形成した光電
変換素子に不必要な光電変換が行われるのを有効に防止
することができ、これによって各半導体チップの光電変
換素子には原稿の画像情報に対応した正確な光電変換を
行わせることも可能となる。
Further, since the light shielding plate is arranged between the semiconductor chips adjacent to each other, each semiconductor chip is irradiated with unnecessary light and unnecessary photoelectric conversion is performed on the photoelectric conversion element formed on the upper surface of the semiconductor chip. It is possible to effectively prevent the conversion, and it is possible to cause the photoelectric conversion element of each semiconductor chip to perform accurate photoelectric conversion corresponding to the image information of the document.

【0035】更にまた本発明の原稿読み取り装置におい
ては高価なロッドレンズアレイを使用しないことから装
置全体を安価となすこともできる。
Furthermore, in the document reading apparatus of the present invention, since the expensive rod lens array is not used, the cost of the entire apparatus can be reduced.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の原稿読み取り装置の構成を示す分解斜
視図である。
FIG. 1 is an exploded perspective view showing a configuration of a document reading apparatus of the present invention.

【図2】図1のR方向から見た側面図である。FIG. 2 is a side view seen from the R direction in FIG.

【図3】レンズに入射される光の入射角度に対する光量
の関係を示した線図である。
FIG. 3 is a diagram showing the relationship between the incident angle of light incident on a lens and the amount of light.

【図4】光源とレンズとを所定位置に配置した際のレン
ズを通過する光の光量を示した線図である。
FIG. 4 is a diagram showing a light amount of light passing through a lens when a light source and a lens are arranged at predetermined positions.

【図5】従来例の原稿読み取り装置の構成を示す分解斜
視図である。
FIG. 5 is an exploded perspective view showing a configuration of a conventional document reading apparatus.

【符号の説明】[Explanation of symbols]

1・・・・光源 2・・・・レンズ 3・・・・半導体チップ 3a・・・光電変換素子 4・・・・遮光板 5・・・・原稿 1 ... Light source 2 ... Lens 3 ... Semiconductor chip 3a ... Photoelectric conversion element 4 ... Light shield 5 ... manuscript

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 光源と、所定の間隔で直線状に配列され
た複数個のレンズと、各レンズに1対1に対応するよう
に直線状に配列された多数の光電変換素子を有する複数
個の半導体チップと、各半導体チップ間に配された遮光
板とから成る原稿読み取り装置。
1. A plurality of light sources, a plurality of lenses linearly arranged at a predetermined interval, and a plurality of photoelectric conversion elements linearly arranged so that each lens has a one-to-one correspondence. Document reading apparatus including the semiconductor chip of 1 above and a light shielding plate arranged between the semiconductor chips.
【請求項2】 隣接する2個のレンズ間に各レンズから
等距離となる位置で、且つレンズの配列方向と平行に光
源を配したことを特徴とする請求項1記載の原稿読み取
り装置。
2. The document reading apparatus according to claim 1, wherein a light source is arranged between two adjacent lenses at a position equidistant from each lens and in parallel with the lens arrangement direction.
JP3157932A 1991-06-28 1991-06-28 Original reader Pending JPH0514600A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3157932A JPH0514600A (en) 1991-06-28 1991-06-28 Original reader

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3157932A JPH0514600A (en) 1991-06-28 1991-06-28 Original reader

Publications (1)

Publication Number Publication Date
JPH0514600A true JPH0514600A (en) 1993-01-22

Family

ID=15660631

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3157932A Pending JPH0514600A (en) 1991-06-28 1991-06-28 Original reader

Country Status (1)

Country Link
JP (1) JPH0514600A (en)

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US8482813B2 (en) 2007-07-13 2013-07-09 Mitsubishi Electric Corporation Image-scanning device
JP2012235538A (en) * 2007-07-13 2012-11-29 Mitsubishi Electric Corp Image-scanning device
EP2166743A1 (en) * 2007-07-13 2010-03-24 Mitsubishi Electric Corporation Image-scanning device
JPWO2009011153A1 (en) * 2007-07-13 2010-09-16 三菱電機株式会社 Image reading device
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