JPH05136098A - Apparatus and method for manufacturing semiconductor device - Google Patents
Apparatus and method for manufacturing semiconductor deviceInfo
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- JPH05136098A JPH05136098A JP30045091A JP30045091A JPH05136098A JP H05136098 A JPH05136098 A JP H05136098A JP 30045091 A JP30045091 A JP 30045091A JP 30045091 A JP30045091 A JP 30045091A JP H05136098 A JPH05136098 A JP H05136098A
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- plasma
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Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は半導体装置の製造装置及
び製造方法に関し特にプラズマエッチング装置と製造方
法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device manufacturing apparatus and manufacturing method, and more particularly to a plasma etching apparatus and manufacturing method.
【０００２】[0002]
【従来の技術】図１１は従来のエッチング装置のチャン
バ−断面図であり、１１０１は反応ガス、１１０２はマ
スフロコントロ−ラ−、１１０３は冷却水、１１０４は
接地電極、１１０５はガス吹き出し板、１１０６は排気
ガス、１１０７はウェハ−、１１０８はウェハ−押え、
１１０９は絶縁物、１１１０は冷却水、１１１１は高周
波電極である。従来のエッチング装置と方法は、まず、
１１０１の反応ガスを１１０２のマスフロコントロ−ラ
−にて流量制御しながら流し、１１０５のガス吹き出し
板（図１２にガス吹き出し口を示す。）の吹き出し口か
ら吹き出し、そこで、チャンバ−内を真空にして１１１
１の高周波電極にてプラズマを発生させドライエッチン
グを行う。例としてＳｉＯ2エッチングを説明する。ま
ず、チャンバ−内の中心に全面にＳｉＯ2をＣＶＤによ
りデポジショウンして付け、そして、フォトリソ工程に
よりフォトレジストをパタ−ニングしたシリコンウェハ
−を１１０８のウェハ−押えに合うように設置してチャ
ンバ−内を真空状態にしたところで１１０５のガス吹き
出し板よりＣＨＦ3ガスとＣ2Ｆ6ガスの混合ガスを導入
して１１１１の高周波電極により高周波を印加してプラ
ズマを発生させエッチングを行っていた。表１にエッチ
ング条件とエッチング特性を示す。2. Description of the Related Art FIG. 11 is a sectional view of a chamber of a conventional etching apparatus, in which 1101 is a reaction gas, 1102 is a mass flow controller, 1103 is cooling water, 1104 is a ground electrode, 1105 is a gas blowing plate, and 1106 is an exhaust gas, 1107 is a wafer, 1108 is a wafer retainer,
Reference numeral 1109 is an insulator, 1110 is cooling water, and 1111 is a high-frequency electrode. The conventional etching device and method are as follows.
The reaction gas of 1101 is flown while controlling the flow rate by a mass flow controller of 1102, and is blown out from a blowout port of a gas blowout plate of 1105 (a gas blowout port is shown in FIG. 12), where the inside of the chamber is vacuumed. Then 111
Plasma is generated at the high frequency electrode of No. 1 and dry etching is performed. As an example, SiO 2 etching will be described. First, SiO 2 is deposited on the entire surface in the center of the chamber by CVD, and a silicon wafer on which a photoresist is patterned by a photolithography process is installed so as to fit the wafer holder of 1108. When the inside was evacuated, a mixed gas of CHF 3 gas and C 2 F 6 gas was introduced from a gas blowing plate 1105 and a high frequency was applied by a high frequency electrode 1111 to generate plasma for etching. Table 1 shows etching conditions and etching characteristics.
【０００３】[0003]
【表１】 ＣＨＦ3ガス流量 １００（ＳＣＣＭ） Ｃ2Ｆ6ガス流量 ４０（ＳＣＣＭ） ＲＦパワ− ８００（Ｗ） 圧力 ２００（ｍＴｏｒｒ） エッチングレ−ト ７６５２（Å／ｍｉｎ） 均一性 ７．３２（％） 前述の従来の技術では、チャンバ−内のプラズマ密度が
反応ガスの流れが一定で、エッチング装置の構成により
ウェハ−面内におけるエッチングレ−トが不均一となり
問題となっていた。[Table 1] CHF 3 gas flow rate 100 (SCCM) C 2 F 6 gas flow rate 40 (SCCM) RF power 800 (W) Pressure 200 (mTorr) Etching rate 7652 (Å / min) Uniformity 7.32 ( %) In the above-mentioned conventional technique, the plasma density in the chamber is constant and the flow of the reaction gas is constant, and the etching rate in the wafer surface becomes non-uniform due to the structure of the etching apparatus, which is a problem.
【０００４】[0004]
【発明が解決しようとする課題】従来のプラズマエッチ
ング装置ではチャンバ−内のプラズマ密度がチャンバ−
構成に影響され均一にならずエッチングレ−ト及びエッ
チング形状が均一にならなかった。よって、本発明はプ
ラズマエッチング装置のチャンバ−内のプラズマ密度を
均一化してエッチングレ−ト均一性向上を目的とする。In the conventional plasma etching apparatus, the plasma density in the chamber is
The etching rate and etching shape were not uniform due to the influence of the structure. Therefore, an object of the present invention is to improve the uniformity of the etching rate by making the plasma density in the chamber of the plasma etching apparatus uniform.
【０００５】[0005]
【課題を解決するための手段】本発明の半導体製造装置
の製造装置はプラズマを利用したエッチング装置におい
て少なくとも２つ以上のプラズマ受光センサ−を有し、
また、少なくとも２つ以上の反応ガス噴出口を有するこ
とを特徴とする。また、本発明は半導体装置の製造方法
は前記プラズマ受光量の変化により前記反応ガス噴出口
から反応ガス流量を変化させることを特徴とする。A semiconductor manufacturing apparatus manufacturing apparatus according to the present invention has at least two plasma light receiving sensors in an etching apparatus using plasma.
Moreover, it is characterized by having at least two or more reactive gas ejection ports. Further, the present invention is characterized in that in the method for manufacturing a semiconductor device, the flow rate of the reaction gas from the reaction gas ejection port is changed by changing the amount of received plasma.
【０００６】[0006]
【作用】プラズマの変化によりプラズマ発光強度が変化
することよりウェハ−上数点のプラズマ発光強度により
ウェハ−上での反応ガス流量を制御してプラズマ密度を
均一化し、プラズマ密度不均一によるエッチングレ−ト
不均一を防止する。[Function] Since the plasma emission intensity changes due to the change in plasma, the reaction gas flow rate on the wafer is controlled by the plasma emission intensity at several points on the wafer to make the plasma density uniform, and the etching density caused by the nonuniform plasma density -To prevent unevenness.
【０００７】[0007]
【実施例】以下に本発明について実施例に基づき詳細に
説明する。EXAMPLES The present invention will be described in detail below based on examples.
【０００８】図１は本発明の第１の実施例を示すナロ−
ギャップ型ＲＩＥ装置のチャンバ−断面図であり、１０
１は反応ガス、１０２は接地電極、１０５は冷却水、１
０３はガス吹き出し板、１０４は排気ガス、１０６はウ
ェハ−、１０７はウェハ−押え、１０８は絶縁物、１０
９は冷却水、１１０は高周波電極、１１３，１１４はデ
ィテクタ−、１１２は計算部、１１１，はコントロ−ラ
−、１１９，１２０はファイバ−、１１５，１１６はマ
スフロコントロ−ラ−、１１７，１１８は受光窓であ
る。次に本発明の実施例としてＳｉＯ2エッチングを例
として説明する。まず、シリコンウェハ−全面にＳｉＯ
2をＣＶＤによりデポジションして、フォトリソ工程に
よりパタ−ンニングしたものをチャンバ−内の中心に設
置して、チャンバ−内を真空にして１１５と１１６のマ
スフロコントロ−ラ−によりＣＨＦ3ガスとＣ2Ｆ6ガス
の混合ガスを１０３のガス吹き出し板（図２にガス吹き
出し口を示しす。）より流し込み１１０の高周波電極の
印加によりプラズマを発生させてエッチングを開始す
る、その時、図３のウェハ−面上の２箇所のプラズマ発
光を１１８の受光窓（ウェハ−中心部）と、１１７の受
光窓（ウェハ−外周部）でモニタ−して１１９，１２０
のファイバ−により信号を１１３，１１４のディテクタ
−に送り電気信号に変換し増幅する、増幅された信号は
１１２の計算部に送り計算部より制御信号を１１１のコ
ントロ−ラ−を通して１１５，１１６のマスフロコント
ロ−ラ−に送り反応ガス流量制御を行ないながらエッチ
ングを行う。FIG. 1 is a narrow view showing a first embodiment of the present invention.
FIG. 10 is a cross-sectional view of the chamber of the gap type RIE device.
1 is a reaction gas, 102 is a ground electrode, 105 is cooling water, 1
Reference numeral 03 is a gas blowing plate, 104 is an exhaust gas, 106 is a wafer, 107 is a wafer retainer, 108 is an insulator, 10
Reference numeral 9 is cooling water, 110 is a high-frequency electrode, 113 and 114 are detectors, 112 is a calculation unit, 111 is a controller, 119 and 120 are fibers, and 115 and 116 are mass flow controllers, 117 and 117, respectively. Reference numeral 118 is a light receiving window. Next, SiO 2 etching will be described as an example of the present invention. First, silicon wafer-SiO on the entire surface
2 is deposited by CVD and patterned by a photolithography process is placed at the center of the chamber, and the chamber is evacuated to CHF 3 gas by a mass flow controller 115 and 116. A mixed gas of C 2 F 6 gas was poured from a gas blowing plate 103 (a gas blowing port is shown in FIG. 2) to generate plasma by applying a high frequency electrode 110, and etching was started. Plasma emission at two points on the wafer surface is monitored at 118 light receiving windows (wafer-center portion) and 117 light receiving windows (wafer-outer peripheral portion) to monitor 119 and 120.
The signal is sent to the detectors 113 and 114 by the fiber of the above and is converted into an electric signal for amplification. The amplified signal is sent to the calculation unit of 112 and the control signal is sent from the calculation unit to the controller of 111 and 116. Etching is carried out while sending the reaction gas to the mass flow controller.
【０００９】図４、図５、図６に図３のプラズマ発光強
度とエッチング時間を示し、プラズマ発光強度による反
応ガス流量制御パタ−ンについて説明する。１）図４に
おいてプラズマ発光強度が安定する時間ｔ１からｔ２ま
でプラズマ発光強度をモニタ−してｔ１からｔ２までの
間におけるプラズマ発光強度の平均を求め、この平均値
になるように流量を制御する。この方法でエッチングし
た時のエッチング条件とエッチング特性を表２に示す。The plasma emission intensity and etching time of FIG. 3 are shown in FIGS. 4, 5 and 6, and the reaction gas flow rate control pattern based on the plasma emission intensity will be described. 1) In FIG. 4, the plasma emission intensity is monitored from time t1 to t2 when the plasma emission intensity stabilizes, the average of the plasma emission intensity is calculated from t1 to t2, and the flow rate is controlled to be the average value. .. Table 2 shows etching conditions and etching characteristics when etching is performed by this method.
【００１０】[0010]
【表２】 ＣＨＦ3ガス流量 １１５（ＳＣＣＭ） Ｃ2Ｆ6ガス流量 ２５（ＳＣＣＭ） ＲＦパワ− ７５０（Ｗ） 圧力 ２００（ｍＴｏｒｒ） エッチングレ−ト ７５１２（Å／ｍｉｎ） 均一性 ４．２５（％） ２）図５においてプラズマ発光強度が安定する時間ｔ１
からｔ２までプラズマ発光強度をモニタ−してｔ１から
ｔ２までの間におけるプラズマ発光強度の最大値を求
め、この最大値になるように流量を制御する。この方法
でエッチングした時のエッチング条件とエッチング特性
を表３に示す。[Table 2] CHF 3 gas flow rate 115 (SCCM) C 2 F 6 gas flow rate 25 (SCCM) RF power 750 (W) Pressure 200 (mTorr) Etching rate 7512 (Å / min) Uniformity 4.25 ( %) 2) Time t1 when the plasma emission intensity is stable in FIG.
The plasma emission intensity is monitored from t1 to t2, the maximum value of the plasma emission intensity is obtained from t1 to t2, and the flow rate is controlled to reach this maximum value. Table 3 shows etching conditions and etching characteristics when etching is performed by this method.
【００１１】[0011]
【表３】 ＣＨＦ3ガス流量 １１０（ＳＣＣＭ） Ｃ2Ｆ6ガス流量 ２５（ＳＣＣＭ） ＲＦパワ− ８００（Ｗ） 圧力 ２００（ｍＴｏｒｒ） エッチングレ−ト ７６５８（Å／ｍｉｎ） 均一性 ５．３２（％） ３）図６においてプラズマ発光強度が安定する時間ｔ１
からｔ２までプラズマ発光強度をモニタ−してｔ１から
ｔ２までの間におけるプラズマ発光強度の最小値を求
め、この最小値になるように流量を制御する。この方法
でエッチングした時のエッチング条件とエッチング特性
を表４に示す。[Table 3] CHF 3 gas flow rate 110 (SCCM) C 2 F 6 gas flow rate 25 (SCCM) RF power 800 (W) Pressure 200 (mTorr) Etching rate 7658 (Å / min) Uniformity 5.32 ( %) 3) Time t1 when plasma emission intensity stabilizes in FIG.
The plasma emission intensity is monitored from t1 to t2, the minimum value of the plasma emission intensity from t1 to t2 is obtained, and the flow rate is controlled to be the minimum value. Table 4 shows etching conditions and etching characteristics when etching is performed by this method.
【００１２】[0012]
【表４】 ＣＨＦ3ガス流量 １１０（ＳＣＣＭ） Ｃ2Ｆ6ガス流量 ３０（ＳＣＣＭ） ＲＦパワ− ７５０（Ｗ） 圧力 ２００（ｍＴｏｒｒ） エッチングレ−ト ６８５０（Å／ｍｉｎ） 均一性 ３．５１（％） 図７は、本発明の第２の実施例を示す平行平板型プラズ
マエッチング装置のチャンバ−断面図であり、７０１は
高周波電極、７０２，７０３はマスフロコントロ−ラ
−、７０４はコントロ−ラ−、７０５は計算部、７０
６，７０８はディテクタ−７０７，７０９は受光窓、７
１０はウェハ−、７１１はアノ−ド、７１２，７１３は
排気ガス７１４はア−ス、７１５はカソ−ド電極７１
６，７１７はファイバ−である。次に本発明の実施例と
してＳｉＯ2エッチングを例として説明する。まず、シ
リコンウェハ−全面にＳｉＯ2をＣＶＤによりデポジシ
ョンして、フォトリソ工程によりパタ−ンニングしたも
のをチャンバ−内の中心に設置して、チャンバ−内を真
空にして７０２と７０３のマスフロコントロ−ラ−によ
りＣＨＦ3ガスとＣ2Ｆ6ガスの混合ガスをそれぞれのガ
ス噴出口（図８にガス吹き出し口を示す。）から出し７
１５のカソ−ド電極（電極に穴が開いている）を通しチ
ャンバ−内に流し込み７０１の高周波電極の印加により
プラズマを発生させエッチングする。その時、図３ウェ
ハ−面上の２箇所のプラズマ発光を７０７の受光窓（ウ
ェハ−外周部）と７０９の受光窓（ウェハ−中心部）で
モニタ−して７１６，７１７のファイバ−により信号を
７０６，７０８のディテクタ−に送り電気信号に変換し
増幅する、そして、増幅された信号は７０５の計算部に
送り計算部より制御信号を７０４のコントロ−ラ−を通
して７０２，７０３のマスフロコントロ−ラ−に送り反
応ガス流量制御を行ないながらエッチングを行なう。プ
ラズマ発光強度による反応ガス流量制御方法は先の第１
の実施例と同様で、また、プラズマ発光強度による反応
ガス流量制御パタ−ンも同様の３つのパタ−ンである。
表５にプラズマ発光強度の平均値を求めて制御するパタ
−ンのエッチング条件とエッチング特性を示す。[Table 4] CHF 3 gas flow rate 110 (SCCM) C 2 F 6 gas flow rate 30 (SCCM) RF power 750 (W) Pressure 200 (mTorr) Etching rate 6850 (Å / min) Uniformity 3.51 ( FIG. 7 is a chamber sectional view of a parallel plate type plasma etching apparatus showing a second embodiment of the present invention, in which 701 is a high frequency electrode, 702 and 703 are mass flow controllers, and 704 is a controller. La, 705 is a calculation unit, 70
6, 708 are detectors 707, 709 are light receiving windows, 7
Reference numeral 10 is a wafer, 711 is an anode, 712 and 713 are exhaust gas 714, and 715 is a cathode electrode 71.
Reference numerals 6,717 are fibers. Next, SiO 2 etching will be described as an example of the present invention. First, SiO 2 is deposited on the entire surface of a silicon wafer by CVD, and a patterning pattern formed by a photolithography process is set at the center of the chamber. The chamber is evacuated to a mass flow controller 702 and 703. A mixed gas of CHF 3 gas and C 2 F 6 gas from each gas jet port (the gas blowout port is shown in FIG. 8) 7
15 cathode electrodes (holes are formed in the electrodes) are flown into the chamber and plasma is generated by the application of the high frequency electrode 701 for etching. At that time, the plasma light emission at two locations on the wafer surface in FIG. 3 is monitored by the light receiving window 707 (wafer-outer peripheral portion) and the light receiving window 709 (wafer central portion), and signals are output by the fibers 716 and 717. It is sent to the detectors 706 and 708 and converted into an electric signal for amplification, and the amplified signal is sent to the calculator 705 and the control signal is sent from the calculator 704 through the controller 704 to the mass flow controllers 702 and 703. Etching is carried out while controlling the flow rate of the reaction gas by sending it to the laser. The reaction gas flow rate control method based on the plasma emission intensity is the first
In the same manner as in Example 1, the reaction gas flow rate control pattern based on the plasma emission intensity is also the same three patterns.
Table 5 shows the etching conditions and etching characteristics of the pattern for controlling by obtaining the average value of the plasma emission intensity.
【００１３】[0013]
【表５】 ＣＨＦ3ガス流量 ８０（ＳＣＣＭ） Ｃ2Ｆ6ガス流量 １５（ＳＣＣＭ） ＲＦパワ− ３００（Ｗ） 圧力 ７０（ｍＴｏｒｒ） エッチングレ−ト ８９６（Å／ｍｉｎ） 均一性 ５．９８（％） また、プラズマ発光強度の最大値及び最小値を求め制御
するパタ−ンのエッチング条件及びエッチング特性を表
６，７に示す。[Table 5] CHF 3 gas flow rate 80 (SCCM) C 2 F 6 gas flow rate 15 (SCCM) RF power 300 (W) Pressure 70 (mTorr) Etching rate 896 (Å / min) Uniformity 5.98 ( %) Further, Tables 6 and 7 show the etching conditions and etching characteristics of the pattern for controlling the maximum and minimum values of the plasma emission intensity.
【００１４】[0014]
【表６】 ＣＨＦ3ガス流量 ７０（ＳＣＣＭ） Ｃ2Ｆ6ガス流量 ２０（ＳＣＣＭ） ＲＦパワ− ２５０（Ｗ） 圧力 １００（ｍＴｏｒｒ） エッチングレ−ト １００３（Å／ｍｉｎ） 均一性 ６．５８（％）[Table 6] CHF 3 gas flow rate 70 (SCCM) C 2 F 6 gas flow rate 20 (SCCM) RF power 250 (W) Pressure 100 (mTorr) Etching rate 1003 (Å / min) Uniformity 6.58 ( %)
【００１５】[0015]
【表７】 ＣＨＦ3ガス流量 ７５（ＳＣＣＭ） Ｃ2Ｆ6ガス流量 １０（ＳＣＣＭ） ＲＦパワ− ２１０（Ｗ） 圧力 ６０（ｍＴｏｒｒ） エッチングレ−ト ７５２（Å／ｍｉｎ） 均一性 ３．９１（％） 図９は本発明の第３の実施例を示すカソ−ドカップリン
グ型ＲＩＥ装置のチャンバ−断面図であり、９０１，９
０２はマスフロコントロ−ラ−、９０３はコントロ−ラ
−、９０４は計算部、９０５，９０６はディテクタ−、
９０７は冷却水、９０８はアノ−ド（ガス吹き出し板）
９０９，９１０は受光窓、９１１はウェハ−、９１２は
絶縁物、９１３，９１４は排気ガス、９１５は冷却水、
９１６は高周波電極、９１７，９１８はファイバ−であ
る。次に本発明の実施例としてＳｉＯ２エッチングを例
として説明する。まず、シリコンウェハ−全面にＳｉＯ
2をＣＶＤによりデポジションして、フォトリソ工程に
よりパタ−ンニングしたものをチャンバ−内の中心に設
置して、チャンバ−内を真空にして９０１と９０２のマ
スフロコントロ−ラ−によりＣＨＦ3ガスとＣ2Ｆ6ガス
の混合ガスをそれぞれのガス噴出口（図１０にガス吹き
出し口を示す。）から出し９０８のアノ−ドを通しチャ
ンバ−内に流し込み９１６の高周波電極の印加によりプ
ラズマを発生させエッチングする。[Table 7] CHF 3 gas flow rate 75 (SCCM) C 2 F 6 gas flow rate 10 (SCCM) RF power 210 (W) Pressure 60 (mTorr) Etching rate 752 (Å / min) Uniformity 3.91 ( 9) FIG. 9 is a sectional view of a chamber of a cathodic coupling type RIE apparatus showing a third embodiment of the present invention.
02 is a mass flow controller, 903 is a controller, 904 is a calculator, 905 and 906 are detectors,
Reference numeral 907 is cooling water, and 908 is an anode (gas blowing plate).
909 and 910 are light receiving windows, 911 is a wafer, 912 is an insulator, 913 and 914 are exhaust gas, 915 is cooling water,
Reference numeral 916 is a high frequency electrode, and 917 and 918 are fibers. Next, SiO2 etching will be described as an example of the present invention. First, silicon wafer-SiO on the entire surface
2 is deposited by CVD and patterned by a photolithography process is set in the center of the chamber, and the chamber is evacuated to CHF 3 gas by a mass flow controller 901 and 902. A mixed gas of C 2 F 6 gas is discharged from each of the gas ejection ports (the gas outlet is shown in FIG. 10) and is introduced into the chamber through the anode of 908 to generate plasma by applying the high frequency electrode of 916. Etching.
【００１６】その時、図３のウェハ−面上の２箇所のプ
ラズマ発光を９１０の受光窓（ウェハ−外周部）と９０
９の受光窓（ウェハ−中心部）でモニタ−して９１７，
９１８のファイバ−により信号を９０６，９０５のディ
テクタ−に送り電気信号に変換し増幅する、そして、増
幅された信号は９０４の計算部に送り計算部より制御信
号を９０３のコントロ−ラ−を通して９０１，９０２の
マスフロコントロ−ラ−に送り反応ガス流量制御を行な
いながらエッチングを行なう。プラズマ発光強度による
反応ガス流量制御方法は先の第１の実施例と同様で、ま
た、プラズマ発光強度による反応ガス流量制御パタ−ン
も同様の３つのパタ−ンである。表８にプラズマ発光強
度の平均値を求めて制御するパタ−ンのエッチング条件
とエッチング特性を示す。また、プラズマ発光強度の最
大値または最小値を求め制御するパタ−ンのエッチング
条件及びエッチング特性を表９，１０に示す。At that time, plasma emission at two points on the wafer surface of FIG.
Monitored at the light receiving window 9 (wafer-center part) 917,
The signal is sent to the detectors 906 and 905 by the fiber 918 to be converted into an electric signal and amplified, and the amplified signal is sent to the calculator 904 and the control signal is sent from the calculator 903 through the controller 903. , 902 to the mass flow controller for etching while controlling the flow rate of the reaction gas. The method of controlling the reaction gas flow rate by the plasma emission intensity is the same as that of the first embodiment, and the reaction gas flow rate control pattern by the plasma emission intensity is also the same three patterns. Table 8 shows the etching conditions and etching characteristics of the pattern for controlling by obtaining the average value of the plasma emission intensity. Tables 9 and 10 show the etching conditions and etching characteristics of the pattern for obtaining and controlling the maximum or minimum value of the plasma emission intensity.
【００１７】[0017]
【表８】 ＣＨＦ3ガス流量 ６０（ＳＣＣＭ） Ｃ2Ｆ6ガス流量 ２０（ＳＣＣＭ） ＲＦパワ− ２００（Ｗ） 圧力 ５０（ｍＴｏｒｒ） エッチングレ−ト １００５（Å／ｍｉｎ） 均一性 ５．１０（％）[Table 8] CHF 3 gas flow rate 60 (SCCM) C 2 F 6 gas flow rate 20 (SCCM) RF power 200 (W) Pressure 50 (mTorr) Etching rate 1005 (Å / min) Uniformity 5.10 ( %)
【００１８】[0018]
【表９】 ＣＨＦ3ガス流量 ５５（ＳＣＣＭ） Ｃ2Ｆ6ガス流量 ２５（ＳＣＣＭ） ＲＦパワ− ２８０（Ｗ） 圧力 ７０（ｍＴｏｒｒ） エッチングレ−ト １２５０（Å／ｍｉｎ） 均一性 ５．９７（％）[Table 9] CHF 3 gas flow rate 55 (SCCM) C 2 F 6 gas flow rate 25 (SCCM) RF power 280 (W) Pressure 70 (mTorr) Etching rate 1250 (Å / min) Uniformity 5.97 ( %)
【００１９】[0019]
【表１０】 ＣＨＦ3ガス流量 ７０（ＳＣＣＭ） Ｃ2Ｆ6ガス流量 ２５（ＳＣＣＭ） ＲＦパワ− ２３０（Ｗ） 圧力 ８０（ｍＴｏｒｒ） エッチングレ−ト ９５０（Å／ｍｉｎ） 均一性 ３．９８（％）[Table 10] CHF 3 gas flow rate 70 (SCCM) C 2 F 6 gas flow rate 25 (SCCM) RF power 230 (W) Pressure 80 (mTorr) Etching rate 950 (Å / min) Uniformity 3.98 ( %)
【００２０】[0020]
【発明の効果】本発明の製造工程によれば、プラズマ密
度が均一化しＳｉＯ2エッチングにおいてウェハ−面内
のＳｉＯ2のエッチングレ−トとの均一性が向上した。
同様に本発明のプラズマエッチング装置にてポリシリコ
ンまたはアルミニウム合金のエッチングを行うと同様な
効果が期待できる。According to the manufacturing process of the present invention, the plasma density is made uniform, and the uniformity of the etching rate of SiO 2 within the wafer surface in SiO 2 etching is improved.
Similarly, the same effect can be expected by etching polysilicon or aluminum alloy with the plasma etching apparatus of the present invention.
【図１】本発明の第１の実施例の半導体装置の製造装置
を示す断面図である。FIG. 1 is a cross-sectional view showing a semiconductor device manufacturing apparatus according to a first embodiment of the present invention.
【図２】本発明の第１の実施例の半導体装置の製造装置
の反応ガス噴出口位置を示す平面図である。FIG. 2 is a plan view showing a reactive gas ejection port position of the semiconductor device manufacturing apparatus according to the first embodiment of the present invention.
【図３】本発明の半導体装置の製造装置におけるウェハ
−上のプラズマ発光測定領域を示す図である。FIG. 3 is a diagram showing a plasma emission measurement region on a wafer in the semiconductor device manufacturing apparatus of the present invention.
【図４】本発明の半導体装置の製造装置によりＳｉＯ2
エッチングした時のエッチング時間とプラズマ発光強度
を示す図である。FIG. 4 shows SiO 2 produced by the semiconductor device manufacturing apparatus of the present invention.
It is a figure which shows the etching time and the plasma emission intensity at the time of etching.
【図５】本発明の半導体装置の製造装置によりＳｉＯ2
エッチングした時のエッチング時間とプラズマ発光強度
を示す図である。FIG. 5 is a view showing SiO 2 produced by the semiconductor device manufacturing apparatus of the present invention.
It is a figure which shows the etching time and the plasma emission intensity at the time of etching.
【図６】本発明の半導体装置の製造装置によりＳｉＯ2
エッチングした時のエッチング時間とプラズマ発光強度
示す図である。FIG. 6 is a schematic diagram of a SiO 2 manufacturing apparatus of the present invention.
It is a figure which shows the etching time and plasma emission intensity at the time of etching.
【図７】本発明の第１の実施例の半導体装置の製造装置
を示す断面図である。FIG. 7 is a cross-sectional view showing the semiconductor device manufacturing apparatus of the first embodiment of the present invention.
【図８】本発明の第１の実施例の半導体装置の製造装置
の反応ガス噴出口位置を示す平面図である。FIG. 8 is a plan view showing a reactive gas ejection port position of the semiconductor device manufacturing apparatus according to the first embodiment of the present invention.
【図９】本発明の第１の実施例の半導体装置の製造装置
を示す断面図である。FIG. 9 is a cross-sectional view showing the semiconductor device manufacturing apparatus of the first embodiment of the present invention.
【図１０】本発明の第１の実施例の半導体装置の製造装
置の反応ガス噴出口位置を示す平面図である。FIG. 10 is a plan view showing a reactive gas ejection port position of the semiconductor device manufacturing apparatus according to the first embodiment of the present invention.
【図１１】従来の半導体装置の製造装置を示す断面図で
ある。FIG. 11 is a cross-sectional view showing a conventional semiconductor device manufacturing apparatus.
【図１２】従来の半導体装置の製造装置の反応ガス噴出
口位置を示す平面図である。FIG. 12 is a plan view showing a reactive gas ejection port position of a conventional semiconductor device manufacturing apparatus.
１０１ 反応ガス １０２ 接地電極 １０３ ガス吹き出し板 １０４ 排気ガス １０５ 冷却水 １０６ ウェハ− １０７ ウェハ−押え １０８ 絶縁物 １０９ 冷却水 １１０ 高周波電極 １１１ コントロ−ラ− １１２ 計算部− １１３，１１４ ディテクタ− １１５，１１６マスフロコントロ−ラ− １１７，１１８ 受光窓 １１９，１２０ ファイバ− ７０１ 高周波電極 ７０２，７０３ マスフロコントロ−ラ− ７０４ コントロ−ラ− ７０５ 計算部 ７０６，７０８ ディテクタ− ７０７，７０９ 受光窓 ７１０ ウェハ− ７１１ アノ−ド ７１２，７１３ 排気ガス ７１４ ア−ス ７１５ カソ−ド電極 ７１６，７１７ ファイバ− ９０１，９０２ マスフロコントロ−ラ− ９０３ コントロ−ラ− ９０４ 計算部 ９０５，９０６ ディテクタ− ９０７ 冷却水 ９０８ アノ−ド（ガス吹き出し板） ９０９，９１０ 受光窓 ９１１ ウェハ− ９１２ 絶縁物 ９１３，９１４ 排気ガス ９１５ 冷却水 ９１６ 高周波電極 ９１７，９１８ ファイバ− １１０１ 反応ガス １１０２ マスフロコントロ−ラ− １１０３ 冷却水 １１０４ 接地電極 １１０５ ガス吹き出し板 １１０６ 排気ガス １１０７ ウェハ− １１０８ ウェハ−押え １１０９ 絶縁物 １１１０ 冷却水 １１１１ 高周波電極 101 Reaction Gas 102 Ground Electrode 103 Gas Blowing Plate 104 Exhaust Gas 105 Cooling Water 106 Wafer-107 Wafer-Holder 108 Insulator 109 Cooling Water 110 High-Frequency Electrode 111 Controller-112 Calculation Unit-113,114 Detector-115,116 Mass Flow controller 117,118 Light receiving window 119,120 Fiber 701 High frequency electrode 702,703 Mass flow controller 704 Controller 705 Calculation unit 706,708 Detector 707,709 Light receiving window 710 Wafer 711 Anno -De 712,713 exhaust gas 714 earth 715 cathode electrode 716,717 fiber 901,902 mass flow controller 903 controller 904 calculation unit 905,906 detector 907 cooling Water 908 Anode (gas blowing plate) 909,910 Light receiving window 911 Wafer 912 Insulator 913,914 Exhaust gas 915 Cooling water 916 High frequency electrode 917,918 Fiber 1101 Reaction gas 1102 Mass flow controller 1103 Cooling water 1104 Ground Electrode 1105 Gas Blowout Plate 1106 Exhaust Gas 1107 Wafer-1108 Wafer-Holder 1109 Insulator 1110 Cooling Water 1111 High Frequency Electrode
Claims (2)
いて少なくとも２つ以上のプラズマ受光センサ−を有
し、また、少なくとも２つ以上の反応ガス噴出口を有す
ることを特徴とする半導体装置の製造装置。1. An apparatus for manufacturing a semiconductor device, which comprises at least two or more plasma light receiving sensors in an etching apparatus using plasma, and at least two or more reactive gas ejection ports.
ズマ受光量の変化により前記反応ガス噴出口から反応ガ
ス流量を変化させることを特徴とする半導体装置の製造
方法。2. A method of manufacturing a semiconductor device, comprising: changing a flow rate of the reaction gas from the reaction gas jet port according to a change in the amount of received plasma light in the apparatus for manufacturing the semiconductor device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30045091A JPH05136098A (en) | 1991-11-15 | 1991-11-15 | Apparatus and method for manufacturing semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30045091A JPH05136098A (en) | 1991-11-15 | 1991-11-15 | Apparatus and method for manufacturing semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05136098A true JPH05136098A (en) | 1993-06-01 |
Family
ID=17884947
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP30045091A Pending JPH05136098A (en) | 1991-11-15 | 1991-11-15 | Apparatus and method for manufacturing semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05136098A (en) |
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