JPH0510351Y2 - - Google Patents
Info
- Publication number
- JPH0510351Y2 JPH0510351Y2 JP1982030660U JP3066082U JPH0510351Y2 JP H0510351 Y2 JPH0510351 Y2 JP H0510351Y2 JP 1982030660 U JP1982030660 U JP 1982030660U JP 3066082 U JP3066082 U JP 3066082U JP H0510351 Y2 JPH0510351 Y2 JP H0510351Y2
- Authority
- JP
- Japan
- Prior art keywords
- vapor phase
- reaction tube
- tube
- region
- notch
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000012010 growth Effects 0.000 claims description 20
- 238000001947 vapour-phase growth Methods 0.000 claims description 18
- 239000013078 crystal Substances 0.000 claims description 8
- 150000001875 compounds Chemical class 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 7
- 239000007787 solid Substances 0.000 description 12
- 238000005516 engineering process Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Description
【考案の詳細な説明】
(a) 考案の技術分野
本考案は化合物半導体の気相成長装置、特に結
晶成長時に、反応管内壁に付着する固形物を防止
する構造をもつた化合物半導体の気相成長装置に
関する。[Detailed description of the invention] (a) Technical field of the invention This invention is a compound semiconductor vapor phase growth apparatus, particularly a compound semiconductor vapor phase growth apparatus having a structure that prevents solid matter from adhering to the inner wall of a reaction tube during crystal growth. Regarding growth equipment.
(b) 技術の背景
化合物半導体装置を製造する際に、気相成長法
は基本技術の一つであつて、均質なるエピタキシ
ヤル結晶層を再現性よく得ることが大切で、その
ためには気相成長装置の反応管内を、常に固形物
等のない清浄な状態に保つことが重要である。(b) Background of the technology When manufacturing compound semiconductor devices, the vapor phase growth method is one of the basic technologies, and it is important to obtain a homogeneous epitaxial crystal layer with good reproducibility. It is important to always keep the inside of the reaction tube of the growth apparatus clean and free of solid matter.
(c) 従来技術と問題点
第１図に従来の気相成長装置の要部断面図を示
しているが、図において石英製の反応管１は片端
キヤツプ（図示していない）を取着するためのす
り合せ部を有する開口式である。(c) Prior art and problems Figure 1 shows a cross-sectional view of the main parts of a conventional vapor phase growth apparatus. In the figure, a reaction tube 1 made of quartz has a cap (not shown) attached at one end. It is an open type with a sliding part for
反応管１の結晶成長領域Ａには、あらかじめ気
相成長時に直接反応管１内壁に付着する固形物２
を防止するために円筒形の石英製ライナ管３を挿
着している。又前記ライナ管３と所定間隔を隔て
て、反応管１のソース領域Ｂ内にソースチヤンバ
４が配設され、その間にドーピングライン５の流
入口が介在している。上記のような気相成長装置
を使用してソースチヤンバ内の加熱された原材料
の蒸気と送入されたドーピングガスが熱分解し、
ライナ管３内に設置された化合物半導体基板（図
示していない）上にエピタキシヤル層として成長
する。同時にライナ管３内壁にも固形物２が付着
するが、気相成長作業完了毎に反応管１内よりラ
イナ管３を取り出して、ライナ管３内壁に付着し
た固形物２を強酸等のエツチング液にて溶解除去
し洗浄乾燥して保管し、次回気相成長時に使用す
る。 In the crystal growth region A of the reaction tube 1, solid matter 2 that directly adheres to the inner wall of the reaction tube 1 during vapor phase growth is placed in advance.
In order to prevent this, a cylindrical quartz liner tube 3 is inserted. A source chamber 4 is provided in the source region B of the reaction tube 1 at a predetermined distance from the liner tube 3, and an inlet of a doping line 5 is interposed therebetween. Using the above-mentioned vapor phase growth apparatus, the heated raw material vapor in the source chamber and the introduced doping gas are thermally decomposed.
It is grown as an epitaxial layer on a compound semiconductor substrate (not shown) placed in the liner tube 3. At the same time, solid matter 2 also adheres to the inner wall of the liner tube 3, but each time the vapor phase growth operation is completed, the liner tube 3 is removed from the reaction tube 1, and the solid matter 2 attached to the inner wall of the liner tube 3 is removed using an etching solution such as a strong acid. Dissolve and remove the product, wash and dry, store, and use for next vapor phase growth.
しかしながら、気相成長の回数の増加と共に、
ライナ管３奥端とソースチヤンバの間の反応管１
内壁に直接固形物２′が溜り固形物２′が反応ガス
に作用して、成長層厚みの再現性、キヤリア濃度
の再現に多大の影響を及ぼし、均質なエピタキシ
ヤル層を得られない欠点があつた。 However, with the increase in the number of vapor phase growths,
Reaction tube 1 between the back end of liner tube 3 and source chamber
The solid matter 2' accumulates directly on the inner wall, and the solid matter 2' acts on the reaction gas, greatly affecting the reproducibility of the growth layer thickness and carrier concentration, and the drawback is that a homogeneous epitaxial layer cannot be obtained. It was hot.
(d) 考案の目的
本考案は上記従来の欠点を解消するため、反応
管内壁に付着する固形物を防止する構造をもつた
気相成長装置を提供することを目的とする。(d) Objective of the Invention In order to overcome the above-mentioned drawbacks of the conventional technology, the objective of the present invention is to provide a vapor phase growth apparatus having a structure which prevents solid matter from adhering to the inner wall of the reaction tube.
(e) 考案の構成
上記目的は本考案により結晶成長領域とソース
領域とを有する円筒形状の反応管の結晶成長領域
に配置されるライナ管の奥端部周辺の一部に切り
込み部を有し、該切り込み部にはドーピングライ
ンの先端部が嵌め込まれ、また切り込み部側端面
にはソースチヤンバの端面が接するようにドーピ
ングライン及びソースチヤンバが並列に反応管の
ソース領域に配置されてなることを特徴とする化
合物半導体の気相成長装置で達成される。(e) Structure of the invention The above object is to provide a cylindrical reaction tube having a crystal growth region and a source region, with a notch in a part around the inner end of the liner tube disposed in the crystal growth region. , the doping line and the source chamber are arranged in parallel in the source region of the reaction tube such that the tip of the doping line is fitted into the notch, and the end surface of the source chamber is in contact with the end surface on the side of the notch. This is achieved using a compound semiconductor vapor phase growth system.
(f) 考案の実施例
第２図は本考案を適用した化合物半導体の気相
成長装置の一実施例を示す要部断面図であつて、
１１は反応管、１２は固形物、１３はライナ管、
１４はソースチヤンバ、１５はドーピングライン
を夫々示すが、ライナ管１３は第１図に示す従来
の装置と異なり、ソースチヤンバ１４に当接する
構造になつている。第３図は第２図に示すライナ
管１３の斜視図で図に示すごとくライナ管１３の
奥端にドーピングライン１５に対応する切り込み
部を設けている。このような構造にするとライナ
管１３は反応管１１の成長領域Ａのみならずドー
ピングライン１５の一部を嵌め込みソース領域Ｂ
内のソースチヤンバ１４に当接することができ、
第１図におけるライナ管３とソースチヤンバ４と
の間の反応管１の内壁に付着した固形物２′はす
べてライナ管１３の内壁に付着し、反応管１１の
内壁への付着を防止することが可能となる。従つ
て気相成長作業毎にライナ管１３を清浄にして使
用すれば反応管１１内壁が常に固形物１２等のな
い清浄な状態に保つことができる。(f) Embodiment of the invention FIG. 2 is a sectional view of essential parts showing an embodiment of a compound semiconductor vapor phase growth apparatus to which the invention is applied.
11 is a reaction tube, 12 is a solid substance, 13 is a liner tube,
Reference numeral 14 indicates a source chamber, and reference numeral 15 indicates a doping line. However, unlike the conventional device shown in FIG. 1, the liner tube 13 is structured to abut against the source chamber 14. FIG. 3 is a perspective view of the liner tube 13 shown in FIG. 2, and as shown in the figure, a notch corresponding to the doping line 15 is provided at the inner end of the liner tube 13. With this structure, the liner tube 13 fits not only the growth region A of the reaction tube 11 but also a part of the doping line 15 and forms the source region B.
can abut the source chamber 14 in the
All of the solid matter 2' that has adhered to the inner wall of the reaction tube 1 between the liner tube 3 and the source chamber 4 in FIG. It becomes possible. Therefore, if the liner tube 13 is cleaned before every vapor phase growth operation, the inner wall of the reaction tube 11 can always be kept clean free of solid matter 12 and the like.
第４図は本考案の一実施例としてインジウムリ
ン（InP）の基板上にエピタキシヤル層を成長さ
せた場合の成長回数と成長速度の関係を表わす図
であつて、ａは第１図に示した従来の気相成長装
置によつて得られた値であり、ｂは第２図に示し
た本考案による気相成長装置で測定された結果で
ある。図から明らかなように本考案の気相成長装
置を使用することにより、大きな成長速度が得ら
れ、かつ反応の安定化により変動の少ない一定し
た成長速度が得られる。又不純物濃度の変動につ
いても同様の効果を確認できた。 FIG. 4 is a diagram showing the relationship between the number of times of growth and the growth rate when an epitaxial layer is grown on an indium phosphide (InP) substrate as an embodiment of the present invention, where a is shown in FIG. b is a value obtained using a conventional vapor phase growth apparatus, and b is a result measured using a vapor phase growth apparatus according to the present invention shown in FIG. As is clear from the figure, by using the vapor phase growth apparatus of the present invention, a high growth rate can be obtained, and due to the stabilization of the reaction, a constant growth rate with little fluctuation can be obtained. A similar effect was also confirmed with respect to fluctuations in impurity concentration.
(g) 考案の効果
上述のごときこの考案によれば、反応管内壁に
付着する固形物を防止し、反応ガスへの影響をな
くして、成長速度ならびに不純物濃度の安定化に
より均質なエピタキシヤル層を成長させることが
でき、品質向上は勿論コストダウンにも役立つす
ぐれたものである。(g) Effects of the invention According to the above-mentioned invention, it is possible to prevent solid matter from adhering to the inner wall of the reaction tube, eliminate its influence on the reaction gas, and create a homogeneous epitaxial layer by stabilizing the growth rate and impurity concentration. This is an excellent tool that not only improves quality but also helps reduce costs.
第１図は従来の気相成長装置の要部断面図、第
２図は本考案を適用した気相成長装置の一実施例
を示す要部断面図、第３図はライナ管１３の斜視
図、第４図は従来の装置ならびに本考案による成
長装置で得られた成長回数と成長速度との関係を
示す図である。
１，１１……反応管、２，２′，１２……固形
物、３，１３……ライナ管、４，１４……ソース
チヤンバ、５，１５……ドーピングライン、Ａ…
…結晶成長領域、Ｂ……ソース領域。
FIG. 1 is a sectional view of a main part of a conventional vapor phase growth apparatus, FIG. 2 is a sectional view of a main part of an embodiment of a vapor growth apparatus to which the present invention is applied, and FIG. 3 is a perspective view of a liner tube 13. , FIG. 4 is a diagram showing the relationship between the number of growths and the growth rate obtained with the conventional apparatus and the growth apparatus according to the present invention. 1, 11... Reaction tube, 2, 2', 12... Solid material, 3, 13... Liner tube, 4, 14... Source chamber, 5, 15... Doping line, A...
...Crystal growth region, B...Source region.
Claims (1)
の反応管の結晶成長領域に配置されるライナ管の
奥端部周辺の一部に切り込み部を有し、該切り込
み部にはドーピングラインの先端部が嵌め込ま
れ、また切り込み部側端面にはソースチヤンバの
端面が接するようにドーピングライン及びソース
チヤンバが並列に反応管のソース領域に配置され
てなることを特徴とする化合物半導体の気相成長
装置。 A cylindrical reaction tube having a crystal growth region and a source region has a notch in a part around the inner end of the liner tube disposed in the crystal growth region, and the tip of the doping line is in the notch. A compound semiconductor vapor phase growth apparatus characterized in that a doping line and a source chamber are disposed in parallel in a source region of a reaction tube so that the end surface of the source chamber is in contact with the end surface on the side of the notch.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3066082U JPS58133932U (en) | 1982-03-04 | 1982-03-04 | Compound semiconductor vapor phase growth equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3066082U JPS58133932U (en) | 1982-03-04 | 1982-03-04 | Compound semiconductor vapor phase growth equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58133932U JPS58133932U (en) | 1983-09-09 |
| JPH0510351Y2 true JPH0510351Y2 (en) | 1993-03-15 |
Family
ID=30042362
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3066082U Granted JPS58133932U (en) | 1982-03-04 | 1982-03-04 | Compound semiconductor vapor phase growth equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58133932U (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS544066A (en) * | 1977-06-13 | 1979-01-12 | Hitachi Ltd | Growing method of silicon crystal under low pressure |
| JPS5698823A (en) * | 1980-01-09 | 1981-08-08 | Nec Corp | Method of vapor growth of semiconductor of 3-5 group compound |
-
1982
- 1982-03-04 JP JP3066082U patent/JPS58133932U/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS544066A (en) * | 1977-06-13 | 1979-01-12 | Hitachi Ltd | Growing method of silicon crystal under low pressure |
| JPS5698823A (en) * | 1980-01-09 | 1981-08-08 | Nec Corp | Method of vapor growth of semiconductor of 3-5 group compound |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58133932U (en) | 1983-09-09 |
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