JPH05102228A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPH05102228A
JPH05102228A JP25933291A JP25933291A JPH05102228A JP H05102228 A JPH05102228 A JP H05102228A JP 25933291 A JP25933291 A JP 25933291A JP 25933291 A JP25933291 A JP 25933291A JP H05102228 A JPH05102228 A JP H05102228A
Authority
JP
Japan
Prior art keywords
wire
capillary
conductive thin
wires
bonding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP25933291A
Other languages
Japanese (ja)
Inventor
Akihiro Murata
昭浩 村田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP25933291A priority Critical patent/JPH05102228A/en
Publication of JPH05102228A publication Critical patent/JPH05102228A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
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Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To electrically insulative fine wires from outer environment while conserving the strength of the wires by a method wherein an insulating fine wire is wound around a conductive fine wire protruded from the central part of multiple through holes made in a capillary. CONSTITUTION:An initial ball 13 is formed by releasing the first and second clampers 9 and 3 to melt down a conductive wire 1. A capillary 2 positioned above an electrode 10 is lowered to perform the pressure fixing step. At this time, a nonconductive fine wire 4 is bonded onto the initial ball 13 together with the conductive wire 1. When the capillary 2 is lifted by 1-10mm to be turned, the nonconductive fine wire 4 is wound around the conductive wire 1 to be electrically insulated. Next, after moving the capillary 2 to an outer connecting terminal 7 to be brought into contact therewith, the nonconductive fine wire 4 is cut off. Through these procedures, the strength of the wires can be increased while enabling the electrical contact between the two fine wires during the molding step to be avoided.

Description

【発明の詳細な説明】Detailed Description of the Invention

【０００１】[0001]

【産業上の利用分野】本発明は半導体集積回路の表面に
形成された電極パッドと、リードフレームのリードや、
セラミック基板あるいは樹脂基板表面に形成された配線
パターン（以下、リードフレームのリードや、セラミッ
ク基板あるいは樹脂基板表面に形成された配線パターン
を単に外部接続端子と称する。）とを導電性細線（以
下、ワイヤとする。）にて接続する半導体装置の製造方
法に関するものである。BACKGROUND OF THE INVENTION The present invention relates to an electrode pad formed on the surface of a semiconductor integrated circuit, a lead of a lead frame,
A wiring pattern formed on the surface of the ceramic substrate or the resin substrate (hereinafter, the lead of the lead frame and the wiring pattern formed on the surface of the ceramic substrate or the resin substrate are simply referred to as external connection terminals) and a conductive thin wire (hereinafter, The present invention relates to a method for manufacturing a semiconductor device connected by wires.

【０００２】[0002]

【従来の技術】半導体集積回路の表面に形成された電極
パッドと、外部接続端子とを導電性細線にて接続するワ
イヤボンディング技術には、主なもので、熱圧着ボンデ
ィング方式、超音波ボンディング方式、超音波併用熱圧
着ボンディング方式の３種類がある。2. Description of the Related Art Wire bonding technology for connecting an electrode pad formed on the surface of a semiconductor integrated circuit and an external connection terminal with a conductive thin wire is mainly used. A thermocompression bonding method and an ultrasonic bonding method are used. , There are three types of thermocompression bonding method using ultrasonic waves.

【０００３】熱圧着ボンディング方式、超音波併用熱圧
着ボンディング方式においては、貫通孔を有するキャピ
ラリと呼ばれるボンディングツールが使用され、超音波
ボンディング方式では貫通孔と圧着部からなるボンディ
ングウエッジと呼ばれるボンディングツールを使用す
る。前記ボンディングツールの貫通孔の中にワイヤを通
し、ワイヤボンディングが行なわれる。In the thermocompression bonding method and the thermocompression bonding method using ultrasonic waves, a bonding tool called a capillary having a through hole is used. In the ultrasonic bonding method, a bonding tool called a bonding wedge composed of a through hole and a pressure bonding portion is used. use. Wire bonding is performed by passing a wire through the through hole of the bonding tool.

【０００４】図４は従来のボンディング方法の説明図
で、２がキャピラリと呼ばれるボンディングツールであ
る、そして１１が半導体素子、１２がその保持台、１０
がボンディングパッド、７が外部接続端子である、９が
クランパーと呼ばれる、導電性細線を押さえる治具であ
る。FIG. 4 is an explanatory view of a conventional bonding method, 2 is a bonding tool called a capillary, 11 is a semiconductor element, 12 is its holding table, 10
Is a bonding pad, 7 is an external connection terminal, and 9 is a jig called a clamper for holding a conductive thin wire.

【０００５】ここでは図４を用いて熱圧着ボンディング
方式、超音波併用熱圧着ボンディング方式で用いられる
キャピラリと呼ばれるボンディングツールを用いたボー
ルボンディングの方法について説明する。A ball bonding method using a bonding tool called a capillary used in the thermocompression bonding method and the ultrasonic combined thermocompression bonding method will be described with reference to FIG.

【０００６】まずワイヤ１をキャピラリ２に挿入保持し
ワイヤ１の下端をキャピラリ２の下端よりわずかに突出
させ、その突出端を電気放電により熱し、イニシャルボ
ール１３を形成する。この状態でキャピラリ２を半導体
集積回路１１の表面に形成された電極パッド１０の上方
に位置させた後、キャピラリ２を降下させ、圧着により
第１ボンディングを行う。次にキャピラリ２を上昇させ
た後、第２のボンディング位置である外部接続端子７の
方向に移動させ、第２ボンディング位置に向かって降下
させる。そして、キャピラリ２の下端縁でワイヤ１を押
しつぶして外部接続端子７にボンディングを行なう。そ
の後、キャピラリをわずかに上昇させた後、キャピラリ
２の上方のクランパー９でワイヤ１を保持し、キャピラ
リ２と共に上昇させる。この結果ワイヤ１には張力が加
わり、第２ボンディング部の近傍から破断する。これら
の一連の動作でループ８が形成される。その後再びキャ
ピラリ２の下端から突出しているワイヤ１の下端を球状
化した後、クランパー９を解放させて新たにボンディン
グ作業を行なう。First, the wire 1 is inserted and held in the capillary 2, the lower end of the wire 1 is slightly protruded from the lower end of the capillary 2, and the protruding end is heated by electric discharge to form the initial ball 13. In this state, the capillary 2 is positioned above the electrode pad 10 formed on the surface of the semiconductor integrated circuit 11, and then the capillary 2 is lowered and the first bonding is performed by pressure bonding. Next, after raising the capillary 2, it is moved in the direction of the external connection terminal 7, which is the second bonding position, and is lowered toward the second bonding position. Then, the wire 1 is crushed by the lower end edge of the capillary 2 to bond the external connection terminal 7. After that, the capillary 1 is slightly lifted, and then the wire 1 is held by the clamper 9 above the capillary 2 and lifted together with the capillary 2. As a result, tension is applied to the wire 1 and the wire 1 is broken from the vicinity of the second bonding portion. The loop 8 is formed by these series of operations. After that, the lower end of the wire 1 protruding from the lower end of the capillary 2 is made spherical again, and then the clamper 9 is released to perform a new bonding operation.

【０００７】ワイヤボンディングを行った後、前記半導
体装置はモールド工程と呼ばれる樹脂封止工程に移る。
以下、図５によりモールド工程の簡単な説明を行う。１
５は上金型、１６は下金型、１４は樹脂を流入させるた
めのゲートと呼ばれる注入孔、１１は半導体素子、１２
は半導体素子を保持するダイパットと呼ばれる保持台で
ある。まず上型１５及び下型１６を開き、半導体素子１
１及びその保持台１２を金型内部に設置し、その後、金
型１５、１６を閉じ、樹脂注入孔１４より熱硬化性ある
いは熱可塑性樹脂を注入し、モールドを行う。そして、
１分間〜５分間の硬化の後、金型１５、１６を開いて成
形された半導体装置をを取り出す。After wire bonding is performed, the semiconductor device goes to a resin sealing process called a molding process.
The molding process will be briefly described below with reference to FIG. 1
5 is an upper mold, 16 is a lower mold, 14 is an injection hole called a gate for allowing resin to flow in, 11 is a semiconductor element, 12
Is a holding table called a die pad for holding a semiconductor element. First, the upper die 15 and the lower die 16 are opened to open the semiconductor element 1
1 and its holding base 12 are installed inside the mold, and then the molds 15 and 16 are closed, and thermosetting or thermoplastic resin is injected from the resin injection hole 14 to perform molding. And
After curing for 1 to 5 minutes, the molds 15 and 16 are opened and the molded semiconductor device is taken out.

【０００８】[0008]

【発明が解決しようとする課題】近年、半導体集積回路
の高集積化、多機能化により電極数や外部端子側の端子
数の増加が進んでいるわけであるが、周知の通り半導体
集積回路側の微細化よりも外部接続端子側の微細化は遅
れており半導体集積回路から遠ざかった位置に外部接続
端子を配置しなくてはならず半導体集積回路表面上に形
成された電極パッドと外部接続端子間を長いワイヤを用
いて接続しなければならない。そのため図５に示すよう
なワイヤボンディング工程後のモールド工程において、
ワイヤが長いために、熱硬化性あるいは熱可塑性の樹脂
を金型内に流入させたとき、ワイヤが樹脂で押し流さ
れ、ワイヤどうしが接触したり、樹脂の流入圧力により
ワイヤが切れたりする不具合を生じる。また、ワイヤボ
ンディング装置とワイヤの機械的接触抵抗のばらつきの
為に発生するループ形状のばらつきも大きな問題となっ
ている。従来のボンディング方法では、半導体集積回路
の表面からループのもっとも高いところまでの高さのば
らつきは１００ミクロン程度である、このためワイヤ強
度や、ワイヤの流れによるワイヤの接触等の不具合が更
に懸念されている。In recent years, the number of electrodes and the number of terminals on the external terminal side have been increasing due to high integration and multifunction of semiconductor integrated circuits. The miniaturization of the external connection terminal side is behind the miniaturization of the external connection terminal, and it is necessary to dispose the external connection terminal at a position away from the semiconductor integrated circuit and the electrode pad and the external connection terminal formed on the surface of the semiconductor integrated circuit. Connections must be made using long wires. Therefore, in the molding process after the wire bonding process as shown in FIG.
Due to the long wires, when a thermosetting or thermoplastic resin is flown into the mold, the wires are pushed away by the resin, the wires contact each other, and the wires may break due to the inflow pressure of the resin. Occurs. In addition, the variation in the loop shape caused by the variation in the mechanical contact resistance between the wire bonding device and the wire is also a serious problem. In the conventional bonding method, the height variation from the surface of the semiconductor integrated circuit to the highest point of the loop is about 100 μm. Therefore, there are further concerns about problems such as wire strength and wire contact due to wire flow. ing.

【０００９】[0009]

【課題を解決するための手段】本発明に係わる半導体装
置は、キャピラリの貫通孔を複数設置し、中央部の貫通
孔に導電性細線、他の貫通孔に非導電性細線を配置し、
ワイヤボンディング時にキャピラリを回転させながらワ
イヤボンディングすることにより、中央部の貫通孔より
突出させた導電性細線の周りに絶縁性細線を適時巻き付
けてワイヤボンディングを行い、ワイヤの強度を保つと
共にワイヤを外部環境と電気的に絶縁する半導体装置を
製造することを特長とする。In a semiconductor device according to the present invention, a plurality of through holes of a capillary are installed, conductive thin wires are arranged in the central through holes, and non-conductive thin wires are arranged in other through holes.
When performing wire bonding while rotating the capillary at the time of wire bonding, the insulating thin wire is wound around the conductive thin wire protruding from the through hole at the center to perform wire bonding to maintain the strength of the wire and to keep the wire outside. It is characterized by manufacturing semiconductor devices that are electrically insulated from the environment.

【００１０】[0010]

【実施例】以下、本発明の実施例を図に基ずいて説明す
る。Embodiments of the present invention will be described below with reference to the drawings.

【００１１】図１は、本発明の実施例を示すもので、熱
圧着ボンディング方式、及び超音波併用熱圧着ボンディ
ング方式用のボンディングツールであるキャピラリの図
である。本明細書ではキャピラリの貫通孔は３箇所のも
ので説明を行う。図１（ａ）は本発明のキャピラリの平
面図、図１（ｂ）は図１（ａ）のＡ−Ａ’部分を切断し
た時の断面図、図１（ｃ）は本発明のボンディングツー
ルのセカンドクランパー部の詳細図である。FIG. 1 shows an embodiment of the present invention, and is a view of a capillary which is a bonding tool for the thermocompression bonding method and the ultrasonic thermocompression bonding method. In this specification, the capillary has three through holes. 1A is a plan view of a capillary of the present invention, FIG. 1B is a cross-sectional view taken along the line AA ′ of FIG. 1A, and FIG. 1C is a bonding tool of the present invention. FIG. 3 is a detailed view of the second clamper section of FIG.

【００１２】ボンディングツール２には中央部に２つめ
のクランパーとしてセカンドクランパー３が装着してあ
り、その中心部には従来のキャピラリー通り貫通孔６が
設けられている、セカンドクランパー３は従来のクラン
パー９と違い、図１（ｃ）にあるように上方から下方に
移動させることによりキャピラリ２の内壁とにより貫通
孔５に導入されている非導電性細線４のみをクランプ、
あるいは切断することが出来るものである。そしてその
セカンドクランパー３内の貫通孔６内を導電性細線１が
通っており、適時キャピラリ上方のファーストクランパ
ーと呼ばれる９により押えることが出来る。そしてその
側面に複数の貫通孔５が配されており、その貫通孔５の
中を非導電性細線４が通っており、貫通孔の出口にあた
る８で合流している。これらは前記導電性細線同様にク
ランパー９により従来どうり押さえる事も可能である
し、また、先に述べたようにセカンドクランパー３を上
下に移動させることにより押え、あるいは切断すること
が可能である。本明細書では３箇所の貫通孔を持つキャ
ピラリーを図１及び図２に明示してある。A second clamper 3 is mounted in the center of the bonding tool 2 as a second clamper, and a through hole 6 for a conventional capillary is provided in the center thereof. The second clamper 3 is a conventional clamper. Unlike FIG. 9, only the non-conductive thin wire 4 introduced into the through hole 5 by the inner wall of the capillary 2 is clamped by moving it from the upper side to the lower side as shown in FIG.
Alternatively, it can be cut. The conductive thin wire 1 passes through the through hole 6 in the second clamper 3 and can be pressed by a so-called first clamper 9 above the capillary at appropriate times. A plurality of through holes 5 are arranged on the side surface of the through hole 5. The non-conductive thin wires 4 pass through the through holes 5 and meet at the exit 8 of the through holes. Similar to the above-mentioned conductive thin wire, these can be pressed by the clamper 9 in the conventional manner, or can be pressed or cut by moving the second clamper 3 up and down as described above. . In this specification, a capillary having three through holes is clearly shown in FIGS. 1 and 2.

【００１３】これらに使用する導電性細線は、例えば金
線、アルミニウム線、銅線、またはそれらの合金等を使
用する。また、非導電性細線としてはポリエチレン線、
ビニール線、ポリイミド線、等があげられる。As the conductive thin wire used for these, for example, a gold wire, an aluminum wire, a copper wire, or an alloy thereof is used. As the non-conductive thin wire, polyethylene wire,
Examples include vinyl wire and polyimide wire.

【００１４】図２は、図１のボンディングツール２を実
際にワイヤボンディング装置に取り付けて使用した場合
の説明図である。まずファーストクランパー９及びセカ
ンドクランパー３を開放し導電性細線１を従来どうりに
溶融させイニシャルボール１３を形成させ、その状態で
キャピラリ２を半導体集積回路１１の表面に形成された
電極パッド１０の上方に位置させた後、キャピラリ２を
降下させ圧着させる。このとき非導電性細線４も一緒に
イニシャルボールへ付着させる。このとき合計３本の細
線がイニシャルボールより伸びていることになる。その
後、キャピラリ２を１ｍｍから１０ｍｍ程度上昇させ、
キャピラリ２を図２のごとく回転させる。このとき回転
方向は左右どちらでもよいが、回転数は１から３０まで
の間とすることが望ましい。これにより導電性細線１は
非導電性細線４に巻かれることにより事実上外部より電
気的に絶縁被覆されたこととなる。次にキャピラリ２を
第２ボンディング位置である外部接続端子７にもって行
き、そのまま外部接続端子７に向かって降下させる。そ
して、図３のごとくキャピラリ２と外部接続端子７が接
触した後、セカンドクランパー３を降ろす事により非導
電性細線４をカットする。その後、キャピラリ２をわず
かに上昇させた後、キャピラリ２の上方のファーストク
ランパー９でワイヤを保持し、キャピラリ２と共に上昇
させる。この結果ワイヤ１には張力が加わり、第２ボン
ディング部の近傍から破断する。これらの一連の動作で
ループ１４が形成される。その後再びキャピラリのファ
ーストクランパー及びセカンドクランパーを開放し、同
様の操作を行う。導電性細線として金線、非導電性細線
としてポリイミド系の物を使用した例をあげると、従来
の方法では金線の垂直引っ張り強度（一般にプル強度と
呼ばれる）は約１０ｇであった、しかし本発明の方法を
使用した場合には１００ｇ以上にもなるワイヤを張る事
が出来る製造方法である。FIG. 2 is an explanatory view when the bonding tool 2 of FIG. 1 is actually attached to a wire bonding apparatus and used. First, the first clamper 9 and the second clamper 3 are opened, the conductive thin wire 1 is melted as in the conventional case to form the initial ball 13, and in this state the capillary 2 is placed above the electrode pad 10 formed on the surface of the semiconductor integrated circuit 11. Then, the capillary 2 is lowered and pressure-bonded. At this time, the non-conductive thin wire 4 is also attached to the initial ball. At this time, a total of three thin wires extend beyond the initial ball. After that, the capillary 2 is raised about 1 mm to 10 mm,
The capillary 2 is rotated as shown in FIG. At this time, the rotation direction may be left or right, but it is desirable that the rotation speed be between 1 and 30. As a result, the conductive thin wire 1 is wound around the non-conductive thin wire 4 so that it is effectively electrically insulated from the outside. Next, the capillary 2 is brought to the external connection terminal 7 which is the second bonding position, and lowered toward the external connection terminal 7 as it is. Then, as shown in FIG. 3, after the capillary 2 and the external connection terminal 7 come into contact with each other, the non-conductive thin wire 4 is cut by lowering the second clamper 3. After that, the capillary 2 is slightly raised, and then the wire is held by the first clamper 9 above the capillary 2 and raised together with the capillary 2. As a result, tension is applied to the wire 1 and the wire 1 is broken from the vicinity of the second bonding portion. The loop 14 is formed by these series of operations. After that, the first clamper and the second clamper of the capillary are opened again, and the same operation is performed. Taking an example of using a gold wire as the conductive thin wire and a polyimide-based material as the non-conductive thin wire, the vertical tensile strength (generally called pull strength) of the gold wire was about 10 g in the conventional method. When the method of the invention is used, it is a manufacturing method capable of stretching a wire of 100 g or more.

【００１５】[0015]

【発明の効果】以上のように、本発明によれば、ワイヤ
ーを通す貫通孔を持つボンディングツールにおいて、前
記貫通孔を複数個有し、かつそのキャピラリーを回転さ
せることによりワイヤの強度を上げると共に、モールド
工程に於てワイヤどうしが接触した時にワイヤが被覆し
てあることにより、電気的な接触を防ぐことが出来る。
従来の方法ではプル強度１０ｇ程度であったものが、本
発明により１００ｇを越える強度を出す半導体装置を製
造することが出来る。As described above, according to the present invention, in a bonding tool having a through hole through which a wire is passed, the strength of the wire is increased by having a plurality of the through holes and rotating the capillary thereof. Since the wires are covered when the wires contact each other in the molding process, electrical contact can be prevented.
Although the pull strength was about 10 g in the conventional method, the present invention makes it possible to manufacture a semiconductor device having a strength exceeding 100 g.

【００１６】また、被覆することによって、接触回避が
容易になったため、ワイヤ長も従来のものより１ｍｍか
ら３ｍｍ伸長い半導体装置の製造が可能である。Further, the coating makes it easier to avoid contact, so that it is possible to manufacture a semiconductor device in which the wire length is extended by 1 mm to 3 mm as compared with the conventional one.

【図面の簡単な説明】[Brief description of drawings]

【図１】本発明に係わる半導体装置の製造方法の実施例
を説明するための説明図。FIG. 1 is an explanatory view for explaining an embodiment of a method for manufacturing a semiconductor device according to the present invention.

【図２】本発明の実施例を示す詳細図。FIG. 2 is a detailed view showing an embodiment of the present invention.

【図３】本発明の実施例を示す詳細図。FIG. 3 is a detailed view showing an embodiment of the present invention.

【図４】従来の半導体装置の製造方法の１例を示す説明
図。FIG. 4 is an explanatory view showing an example of a conventional method of manufacturing a semiconductor device.

【図５】従来の半導体装置の製造方法の１例を示す説明
図。FIG. 5 is an explanatory view showing an example of a conventional method for manufacturing a semiconductor device.

【符号の説明】[Explanation of symbols]

１ 導電性細線 ２ キャピラリ ３ セカンドクランパー ４ 非導電性細線 ５ 非導電性細線用貫通孔 ６ 導電性細線用貫通孔 ７ 外部接続端子 ８ ワイヤループ ９ ファーストクランパー １０ 半導体素子パッド部 １１ 半導体素子 １２ 半導体素子保持部 １３ イニシャルボール部 １４ モールド金型樹脂注入部 １５ 上型 １６ 下型 DESCRIPTION OF SYMBOLS 1 Conductive thin wire 2 Capillary 3 Second clamper 4 Non-conductive thin wire 5 Through hole for non-conductive thin wire 6 Through hole for conductive thin wire 7 External connection terminal 8 Wire loop 9 First clamper 10 Semiconductor element pad section 11 Semiconductor element 12 Semiconductor element Holding part 13 Initial ball part 14 Mold die resin injection part 15 Upper mold 16 Lower mold

Claims (1)

【特許請求の範囲】[Claims] 【請求項１】少なくとも半導体集積回路とそれを支持す
る支持部、前記支持部に向かって放射状に伸び前記半導
体集積回路と前記支持部から電気的に離間している複数
のリードまたは配線パターンを有し、半導体集積回路の
表面に形成された電極パッドと、リードフレームのイン
ナーリードや、セラミック基板あるいは樹脂基板表面に
形成された配線パターンとを、貫通孔を持つボンディン
グツールを用い、前記貫通孔の内部に導電性細線を通
し、接続する半導体製造装置において、 前記の貫通孔を複数持つボンディングツールを使用し
て、導電性細線に複数の非導電性細線をからませ被覆さ
れた導電性細線を有する半導体装置を製造することを特
徴とする半導体装置の製造方法。1. At least a semiconductor integrated circuit and a supporting portion for supporting the semiconductor integrated circuit, and a plurality of leads or wiring patterns extending radially toward the supporting portion and electrically separated from the semiconductor integrated circuit and the supporting portion. Then, the electrode pad formed on the surface of the semiconductor integrated circuit, the inner lead of the lead frame, and the wiring pattern formed on the surface of the ceramic substrate or the resin substrate are connected to each other by using a bonding tool having a through hole. In a semiconductor manufacturing apparatus in which a conductive thin wire is inserted to connect inside, a conductive thin wire is coated with a plurality of non-conductive thin wires entangled with each other by using a bonding tool having a plurality of through holes described above. A method of manufacturing a semiconductor device, comprising manufacturing a semiconductor device.
JP25933291A 1991-10-07 1991-10-07 Manufacture of semiconductor device Pending JPH05102228A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP25933291A JPH05102228A (en) 1991-10-07 1991-10-07 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP25933291A JPH05102228A (en) 1991-10-07 1991-10-07 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPH05102228A true JPH05102228A (en) 1993-04-23

Family

ID=17332631

Family Applications (1)

Application Number Title Priority Date Filing Date
JP25933291A Pending JPH05102228A (en) 1991-10-07 1991-10-07 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPH05102228A (en)

Cited By (10)

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US5950100A (en) * 1995-05-31 1999-09-07 Nec Corporation Method of manufacturing semiconductor device and apparatus for the same
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JP2018100950A (en) * 2016-12-20 2018-06-28 株式会社デンソー Semiconductor device and manufacturing method thereof
US10296819B2 (en) 2012-10-09 2019-05-21 Mc10, Inc. Conformal electronics integrated with apparel
US10383219B2 (en) 2008-10-07 2019-08-13 Mc10, Inc. Extremely stretchable electronics
US10447347B2 (en) 2016-08-12 2019-10-15 Mc10, Inc. Wireless charger and high speed data off-loader
US10567152B2 (en) 2016-02-22 2020-02-18 Mc10, Inc. System, devices, and method for on-body data and power transmission
US10986465B2 (en) 2015-02-20 2021-04-20 Medidata Solutions, Inc. Automated detection and configuration of wearable devices based on on-body status, location, and/or orientation
US11992326B2 (en) 2016-04-19 2024-05-28 Medidata Solutions, Inc. Method and system for measuring perspiration

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5950100A (en) * 1995-05-31 1999-09-07 Nec Corporation Method of manufacturing semiconductor device and apparatus for the same
KR100817076B1 (en) * 2006-11-28 2008-03-26 삼성전자주식회사 Partially insulating coated metal wire for wire bonding and wire bonding method of semiconductor package using the same
US10383219B2 (en) 2008-10-07 2019-08-13 Mc10, Inc. Extremely stretchable electronics
US10296819B2 (en) 2012-10-09 2019-05-21 Mc10, Inc. Conformal electronics integrated with apparel
CN107004665A (en) * 2014-09-22 2017-08-01 Mc10股份有限公司 The moulding and ring device and method of bonding line as extensible and flexible interconnection
EP3198638A4 (en) * 2014-09-22 2018-05-30 Mc10, Inc. Methods and apparatuses for shaping and looping bonding wires that serve as stretchable and bendable interconnects
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