JPH0482304A - Parallel operation microwave semiconductor amplifier - Google Patents

Abstract

PURPOSE:To make the frequency characteristic operated over a broad band by matching plural unit amplifiers with different frequencies respectively and providing a phase adjustment circuit to at least one of input and output of part of the unit amplifiers so as to adjust the phase between the plural unit amplifiers. CONSTITUTION:The amplifier is provided with unit amplifiers 1, 2 in parallel operation whose operating frequencies differ from each other and with phase adjustment circuits 6, 7 and is operated over a board band by adjusting the phase. The phase adjustment circuit is realized by a simple line whose impedance is equal to a characteristic impedance (50ohms at a usual microwave band) of an input/output transmission line and only the electric length is corrected. Moreover, it is also possible that lots of parallel connection circuits being three circuits or over are executed to realize further broader band.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a microwave semiconductor device, and more particularly to a microwave semiconductor amplifier capable of widening the frequency characteristic.

[Conventional technology]

FIG. 4 (al is a schematic circuit configuration diagram of a conventional parallel-operating microwave semiconductor amplifier; in the figure, l is the unit microwave amplifier shown in FIG. 2 (hereinafter referred to as Amp 1); 3 is a microwave synthesis/distribution circuit, 4 is the input terminal,
5 is an output terminal.

Moreover, FIG. 4 (bl is a diagram showing, as an example, the frequency characteristics of the gain of a parallel operating microwave semiconductor amplifier designed in the 14 GHz band.

Next, the operation will be explained. In FIG. 4, a microwave signal inputted from an input terminal 4 is equally distributed by a combining/distributing circuit 3 and inputted to each Ampl.

In Am-pi, the configuration shown in FIG. 2 includes an input and output matching circuit 9 designed for a predetermined frequency.
The input signal is amplified and outputted by 10 and the microwave semiconductor 8, and the combined signal is outputted from the output terminal 5 by the combining/distributing circuit 3.

In the example shown in FIG. 4 (Mount 4), which is an example of parallel operation of Ampl shown in FIG. 2(b), the ideal simulation result is exactly the same as a single operation.

[Problem to be solved by the invention]

Conventional parallel-operating microwave semiconductor amplifiers are configured as described above, so if there are variations in the input/output impedance of the microwave semiconductor 80, the dimensions of the matching circuit board, the dimensions of the inductivity 9 circuit pattern, etc., the matching will be difficult. Fluctuations in frequency cause problems such as a decrease in yield and a large amount of time required for adjustment to correct the fluctuations.

This invention was made to solve the above-mentioned problems, and is capable of parallel operation that achieves broadband matching and does not reduce yield or require a large amount of time to make adjustments to compensate for fluctuations. The purpose is to obtain a microwave semiconductor device.

[Means to solve the problem]

The parallel-operating microwave semiconductor amplifier according to the present invention has a plurality of unit amplifiers connected in parallel with different design center frequencies, and is provided with a phase adjustment circuit, thereby adjusting the phase between the plurality of unit amplifiers. It has been adjusted.

[Effect]

In this invention, the design center frequencies of the unit amplifiers connected in parallel are different from each other, and the phase between these unit amplifiers is adjusted by a phase adjustment circuit, so that it is possible to operate in a wide band. .

〔Example〕

An embodiment of the present invention will be described below with reference to the drawings. 1st
Figure (a) is a schematic circuit configuration diagram of a parallel operating microwave semiconductor amplifier according to an embodiment of the present invention, and in the figure,
The same symbols as in Fig. 4 are the same or equivalent parts, and 2 is the third part.
The second unit microwave amplifier (Amp 2
), 6 is an input phase adjustment circuit connected between the synthesis/distribution circuit 3 and the input of Amp2, and 7 is an output phase circuit connected between the output of Amp2 and the synthesis/distribution circuit 3.

In addition, FIG. 1(b) - As an example, 14 GHz and 1
Amplifier Amp1. designed at 5.5GHz. FIG. 7 is a diagram showing the frequency characteristics of the gain of the parallel-operating microwave semiconductor amplifier when Amp2 is operated in parallel and the phase is adjusted.

Next, the operation will be explained. Since the basic operation is almost the same as that described in the conventional example, only the points different from the conventional example will be explained.

In this embodiment, parallel operation unit amplifiers 1.2 having different operating frequencies and phase adjustment circuits 6.7 are provided, and by adjusting the phase, it operates over a wide band. Therefore, it is possible to prevent a decrease in yield due to variations in characteristics of manufacturing materials.

The phase adjustment circuit can be realized with a simple line having the same characteristic impedance as the input/output transmission line (50Ω in a normal microwave band), and only the electrical length is corrected.

Note that in the above embodiment, an example of two parallel operations was shown, but
A large number of parallel connections of three or more may be implemented to further widen the band.

In addition, in the above embodiment, the case where the phase adjustment circuit was provided on both the input and output sides of one unit amplifier was explained, but when reducing the size, the input phase adjustment circuit was provided on the 1 side and the output phase adjustment circuit was provided on the 2 side. Similarly, they may be provided separately, and the same effects as in the above embodiment can be achieved.

[Effects of the Invention] As described above, according to the present invention, a plurality of unit amplifiers operated in parallel have different designed center frequencies, and a phase adjustment circuit is provided to adjust the phase between these unit amplifiers. This has the effect of making it possible to widen the frequency characteristic and preventing a decrease in yield due to variations in the characteristics of the manufacturing materials.

[Brief explanation of drawings]

FIG. 1(a) is a schematic diagram of a parallel operating microwave semiconductor amplifier according to an embodiment of the present invention, and FIG. Figure 2 (al is a schematic configuration diagram of the first unit amplifier, Figure 2 (b) is a diagram showing the simulation results designed at the first frequency, Figure 3 (al is a schematic configuration diagram of the second unit amplifier, Figure 3 (b) is a diagram showing the simulation results designed at the second frequency, Figure 4 (al is a diagram of the parallel operation according to the conventional embodiment) The schematic configuration diagram of the microwave semiconductor amplifier, FIG. 4('b), is a diagram showing the simulation results for the frequency characteristics of the gain when two first unit amplifiers are operated in parallel. In the figure, 1 is A unit amplifier matched in the first frequency band, 2 a unit amplifier matched in the second frequency band, 3 a combining/distributing circuit, 4 an input terminal, 5 an output terminal, 6 an input phase adjustment 7 is an output phase adjustment circuit, 8 is a microwave semiconductor, 9 is an input matching circuit for the first frequency band, IO is an output matching circuit for the first frequency band, 11 is an input matching circuit for the second frequency band ,
12 is an output matching circuit for the second frequency band. Note that the same reference numerals in the figures indicate the same or equivalent parts. Figure 2

Claims (1)

[Claims] (1) In a parallel-operating microwave semiconductor amplifier consisting of a plurality of unit amplifiers connected in parallel that are matched to a predetermined frequency, each of the plurality of unit amplifiers is matched to a different frequency, and some A parallel operating microwave semiconductor amplifier characterized in that a phase adjustment circuit is provided at least one of the input or output of the unit amplifier to adjust the mutual phase between the plurality of unit amplifiers.