JPH046389A - Lamp heating device - Google Patents

Lamp heating device

Info

Publication number
JPH046389A
JPH046389A JP10536390A JP10536390A JPH046389A JP H046389 A JPH046389 A JP H046389A JP 10536390 A JP10536390 A JP 10536390A JP 10536390 A JP10536390 A JP 10536390A JP H046389 A JPH046389 A JP H046389A
Authority
JP
Japan
Prior art keywords
wafer
heated
stage
absorbed
heating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10536390A
Other languages
Japanese (ja)
Inventor
Yousuke Tonami
洋介 渡並
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP10536390A priority Critical patent/JPH046389A/en
Publication of JPH046389A publication Critical patent/JPH046389A/en
Pending legal-status Critical Current

Links

Landscapes

  • Control Of Resistance Heating (AREA)
  • Furnace Details (AREA)

Abstract

PURPOSE:To permit the uniform and sufficient heating of a matter to be heated by a method wherein the matter to be heated is heated by a radiation wave length absorbed by the matter to be heated while a supporting means, supporting the circumferential part of the matter to be heated, is heated by a different radiation wave length absorbed by the supporting means. CONSTITUTION:A wafer heating lamp 1 emits light having a wave length, readily absorbed by a wafer 2 but hardly absorbed by a stage 5. The emissive light is reflected by a reflecting plate 3 and heats the wafer 2. A stage heating lamp 4 emits light having a wave length, readily absorbed by the stage 5 and hardly absorbed by the wafer 2, to heat the stage 5. The emissive light of the stage heating lamp 4 hardly heats the wafer 2 and the stage 5 is not affected by the emissive light of the wafer heating lamp 1 substantially. The stage 5 is provided with a hole at the central part thereof so as to avoid the transfer of heat to the wafer 2 put thereon nd eliminate a temperature difference between the central part and the circumferential part of the same whereby only the circumferential part of the wafer 2 is supported and a contacting part of the wafer 2 with the stage 5 is reduced.

Description

【発明の詳細な説明】 〔発明の目的〕 (産業上の利用分野) 本発明は、被加熱物を均一に加熱できるランプ加熱装置
に関する。
DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Field of Industrial Application) The present invention relates to a lamp heating device that can uniformly heat an object to be heated.

(従来の技術) ラングからの放射光を被加熱物に照射するランプ加熱装
置は、被加熱物に非接触で加熱でき、またランプの供給
電力により容易に加熱温度を制御できるという特長があ
る。このためラング加熱装置はウェハの表J脅を窒化ま
たは酸化するための熱処理工程や不純物拡散工程等の半
導体製造用に使用される。
(Prior Art) A lamp heating device that irradiates an object to be heated with emitted light from a rung has the advantage of being able to heat an object without contacting the object, and that the heating temperature can be easily controlled by the power supplied to the lamp. For this reason, the rung heating device is used for semiconductor manufacturing such as a heat treatment process for nitriding or oxidizing the front surface of a wafer and an impurity diffusion process.

従来のランプ加熱装置は、ステージに載置したウェハを
一個のランプで加熱するものであった。
A conventional lamp heating device heats a wafer placed on a stage using a single lamp.

(発明が解決しようとする課題) このような従来装置では、−個のランプで加熱するので
二次元的な広がりをもつ面光源を形成することができず
被加熱物の表面を均一な温度で加熱できない。特に半導
体ウェハの場合は、その周辺部の温度が熱放散により中
央部の温度に比べて低くなるので周辺部から中央部にか
けて損傷が発生することがある。
(Problems to be Solved by the Invention) In such a conventional device, since heating is performed using − number of lamps, it is not possible to form a surface light source with a two-dimensional spread, and the surface of the heated object cannot be heated at a uniform temperature. Cannot be heated. Particularly in the case of semiconductor wafers, the temperature at the periphery becomes lower than the temperature at the center due to heat dissipation, so damage may occur from the periphery to the center.

本発明は被加熱物を均一に且つ十分に加熱できるランプ
加熱装置を提供することにある。
SUMMARY OF THE INVENTION An object of the present invention is to provide a lamp heating device that can uniformly and sufficiently heat an object to be heated.

〔発明の構成〕[Structure of the invention]

(産業上の利用分野) 上記目的を達成するために本発明は、被加熱物に吸収さ
れる放射波長で被加熱物を加熱する第1の刃口熱手段と
、被刀口熱物に吸収される放射波長と異なる放射波長で
加熱される被加熱部の周辺部を支持する支持手段と、支
持手段に吸収される放射波長で支持手段を加熱する第2
の加熱手段で構成する。
(Industrial Application Field) In order to achieve the above object, the present invention includes a first cutting edge heating means for heating an object to be heated with a radiation wavelength that is absorbed by the object to be heated, and a supporting means for supporting a peripheral portion of the heated part that is heated with a radiation wavelength different from the radiation wavelength that is absorbed by the supporting means; and a second supporting means that heats the supporting means with a radiation wavelength that is absorbed by the supporting means.
It consists of heating means.

(作用) このような構成において第1の別懇手段で被加熱物をガ
ロ熱し、第1の加熱手段とは放射波長の異なる第2の加
熱手段で支持手段を加熱するので、被加熱物の中央部と
周辺部に温度差が発生せず被加熱物を損傷させず均一に
加熱することができる。
(Function) In such a configuration, the object to be heated is galvanically heated by the first separate heating means, and the supporting means is heated by the second heating means having a different radiation wavelength from the first heating means, so that the object to be heated is There is no temperature difference between the center and the periphery, and the object to be heated can be heated uniformly without being damaged.

(実施例〕 以下、本発明の実施例を図面を参照して説明する。(Example〕 Embodiments of the present invention will be described below with reference to the drawings.

図面は、本発明のラング万■熱装置の外観図である。The drawing is an external view of the Lang heating device of the present invention.

lはウェハ加熱用ランプであり、ウェハ2に吸収されや
すくステージ5には吸収されにくい波長の元を放射する
。この放射光は反射板3で反射サレウエパ2を加熱する
。このとき、反射板3はウェハ加熱用ランプ1の放射光
がウエノ・2に最も照射されるように反射角度が調整さ
れている。
1 is a wafer heating lamp, which emits light at a wavelength that is easily absorbed by the wafer 2 and difficult to be absorbed by the stage 5; This radiated light heats the reflective sale pad 2 by the reflective plate 3. At this time, the reflection angle of the reflection plate 3 is adjusted so that the light emitted from the wafer heating lamp 1 is most irradiated onto the wafer 2.

4はステージ加熱用ランプで、ステージ5に吸収されや
丁くウェノ・2には吸収されにくい波長の光を放射し、
ステージ5を刀a熱する。ステージ光にほとんど影響を
受けない。また、ステージ5は、載置されるウェハ2へ
の熱の伝導を避はウェー2の中央部と周辺部の温度差?
なくすように、中央部に穴を設はウェハ2の周辺部のみ
支持しウェハ2との接触部分が小さくなるようにしてい
る。
4 is a stage heating lamp, which emits light of a wavelength that is absorbed by the stage 5 and difficult to be absorbed by the stage 2.
Stage 5 is heated. Almost unaffected by stage light. Also, the stage 5 avoids conduction of heat to the wafer 2 on which it is placed.Is there a difference in temperature between the center and the periphery of the wafer 2?
In order to avoid this problem, a hole is provided in the center to support only the peripheral part of the wafer 2 and to reduce the contact area with the wafer 2.

な2、ウェー・加熱用ランプ1とステージ加熱用ランプ
5め供給電力を調整してウェハ2とステージ5をできる
だけ同一温度にした方が熱伝導が小さくなるので望まし
い。
2. It is desirable to adjust the power supplied to the wafer heating lamp 1 and the stage heating lamp 5 so that the wafer 2 and the stage 5 have the same temperature as much as possible because this will reduce heat conduction.

6はステージ用反射板で、ステージ加熱用ランプ5の放
射光を反射させる。このとき、この放射光がステージ5
に最も照射されるように反射角度が調整されている。
Reference numeral 6 denotes a stage reflector that reflects the light emitted from the stage heating lamp 5. At this time, this synchrotron radiation
The reflection angle is adjusted to best illuminate the area.

本実施例では、ステージ5を加熱するのにステージ加熱
用ラング4を設けたが、例えば高周波誘導コイルで誘導
加熱するなど要旨を変更しない程度に変更することがで
きる。
In the present embodiment, the stage heating rung 4 is provided to heat the stage 5, but it may be modified without changing the gist, such as induction heating using a high frequency induction coil, for example.

〔発明の効果〕〔Effect of the invention〕

このように、被加熱物を加熱する第1の加熱手段とは異
なる第2の加熱手段で支持手段を加熱し被加熱物の中央
部と周辺部で温度差をなくすようにしたので、損傷をお
こすことなく被加熱物を均一に加熱することができるラ
ンプ刀■熱装置ケ得ることができる。
In this way, the supporting means is heated by the second heating means different from the first heating means that heats the object to be heated, thereby eliminating the temperature difference between the center and the periphery of the object to be heated, thereby preventing damage. It is possible to obtain a lamp heating device that can uniformly heat the object to be heated without causing any heat.

【図面の簡単な説明】[Brief explanation of drawings]

図面は、本発明のランプ加熱装置の外観図である。 1・・・ウェハ加熱用ランプ 2・・・ウェハ 4°°°ステージ那熱用ランプ 5・・・ステージ 代理人 弁理士 則 近 憲 佑 The drawing is an external view of the lamp heating device of the present invention. 1...Wafer heating lamp 2...Wafer 4°°° Stage Nather lamp 5... Stage Agent: Patent Attorney Noriyuki Chika

Claims (1)

【特許請求の範囲】  被加熱物に吸収される放射波長で前記被加熱物を加熱
する第1の加熱手段と、 前記被加熱物に吸収される放射波長と異なる放射波長で
加熱される前記被加熱物の周辺部を支持する支持手段と
、 この支持手段に吸収される放射波長で前記支持手段を加
熱する第2の加熱手段と を有するランプ加熱装置。
[Scope of Claims] A first heating means that heats the object to be heated with a radiation wavelength that is absorbed by the object to be heated, and a first heating means that heats the object to be heated with a radiation wavelength that is different from the wavelength of radiation that is absorbed by the object to be heated. A lamp heating device comprising: a support means for supporting a peripheral portion of an object to be heated; and a second heating means for heating the support means with a radiation wavelength absorbed by the support means.
JP10536390A 1990-04-23 1990-04-23 Lamp heating device Pending JPH046389A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10536390A JPH046389A (en) 1990-04-23 1990-04-23 Lamp heating device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10536390A JPH046389A (en) 1990-04-23 1990-04-23 Lamp heating device

Publications (1)

Publication Number Publication Date
JPH046389A true JPH046389A (en) 1992-01-10

Family

ID=14405646

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10536390A Pending JPH046389A (en) 1990-04-23 1990-04-23 Lamp heating device

Country Status (1)

Country Link
JP (1) JPH046389A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6273883B1 (en) 1996-04-09 2001-08-14 Cynosure, Inc. Alexandrite laser system for treatment of dermatological specimens

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6273883B1 (en) 1996-04-09 2001-08-14 Cynosure, Inc. Alexandrite laser system for treatment of dermatological specimens
US6610052B2 (en) 1996-04-09 2003-08-26 Cynosure, Inc. Laser system and method for treatment of biologic targets
US7118562B2 (en) 1996-04-09 2006-10-10 Cynosure, Inc. Laser system and method for treatment of biologic targets

Similar Documents

Publication Publication Date Title
JP3215155B2 (en) Method for rapid heat treatment of semiconductor wafer by irradiation
KR0155545B1 (en) Apparatus for heat-treating a substrate
US4535228A (en) Heater assembly and a heat-treatment method of semiconductor wafer using the same
JP4275729B2 (en) Rapid heat treatment apparatus and method
US4504323A (en) Method for annealing semiconductors with a planar source composed of flash discharge lamps
DE60218690D1 (en) FLASH TEMPERING
JP2006303125A (en) Semiconductor manufacturing apparatus and method of manufacturing semiconductor device
US20030068903A1 (en) Heat treatment device of the light irradiation type and heat treatment process of the irradiation type
JPH046389A (en) Lamp heating device
JP2000349038A (en) Substrate treating device
JP2002208466A (en) Heating lamp and heat treatment device
JP4565365B2 (en) Radiation heating apparatus and method
JPH036018A (en) Lamp annealing apparatus for semiconductor device manufacture
JP2003279245A (en) Drying method and device for coating film, manufacturing method for device, and device
KR19980016834A (en) Rapid heat treatment equipment
JPH04206141A (en) Lamp heating device
JPH0720913Y2 (en) Light processor
TW550680B (en) Heating device of the light irradiation type
JP2000068223A5 (en)
JP2003234303A (en) Heat treatment device
JP3609380B2 (en) Heat treatment equipment
US20230140032A1 (en) Apparatus for thermally processing a substrate
JP2002075899A (en) Uniformly heating method for circular plate-form workpiece
JPS58118112A (en) Heat treating device for semiconductor material
JPH03204618A (en) Back light device