JPH0444314A - Semiconductor substrate processor - Google Patents

Abstract

PURPOSE:To improve energy efficiency by connecting a heat exchanger to a semiconductor substrate processor. CONSTITUTION:A heat exchanger 8 comprises a hollow chamber 8a made of quartz, a pipe 8b made of quartz penetrating while bending inside the chamber 8a, and a gas exhaust port 8c, and is connected to a gas outlet 7 of a semiconductor substrate processor. In addition, a gas pipe 10 supplying gas from a material gas cylinder 6 into a furnace 2 comprises a pipe 10a connecting the material gas cylinder 6 to a pipe 8b inside the heat exchanger 8 and a pipe 10b made of quartz connecting a pipe 8b inside the heat exchanger 8 to a gas supply opening 5 inside the furnace 2. With the arrangement above, the gas heated up to a high temperature in the furnace 2 and used gas is introduced into the heat exchanger 8 connected to a gas exhaust port 7 of the semiconductor substrate processor, and heat-exchanges with raw material gas inside the pipe 8b passing through the heat exchanger 8. as a result, the raw material gas inside the pipe 8b is heated up and supplied through a gas supply opening 5 to the furnace 2.

Description

[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a semiconductor substrate processing apparatus used for manufacturing semiconductor devices. [Prior Art] Fig. 2 is a cross section showing a conventional semiconductor substrate processing apparatus. It is a diagram. In the figure, (1) is the semiconductor substrate to be processed, (2) is the furnace that processes the semiconductor substrate (1), and (3) is the semiconductor substrate (1) that is used when processing the semiconductor substrate (1) in the furnace (2). ), (4) is the heater (5) for raising the temperature inside the furnace (2), is the gas supply port for supplying gas into the furnace (2), and [6] is the gas supply port (5). ) to supply gas into the furnace (2), (7) Fi furnace (
2) is a gas exhaust port for discharging the gas that processed the semiconductor substrate (1) in the gas supply port (6) to the raw material gas cylinder (6).
5) This is a gas pipe that connects the

Next, a processing method using the semiconductor substrate processing apparatus configured in this manner will be explained. First, semiconductor substrates to be processed (1) are arranged on a boat (3) and inserted into a furnace (2) together with io-) (3). After this, the pressure and temperature inside the furnace (2) are set using a heater (4), etc., and then gas is sucked into the furnace (2) through the gas supply pipe (5), and the prescribed process is carried out. be exposed. When the processing in the furnace (2) is completed, the boat (3) on which the semiconductor substrates (1) are lined up is taken out of the furnace (2), and the processed semiconductor substrates (1) are unloaded from the boat (3). The semiconductor substrate (1) is processed as described above, and the gas used in the furnace (2) during processing is discharged to the outside of the furnace (2) from the gas outlet (7).

[Problem to be solved by the invention]

The conventional semiconductor substrate processing equipment is as described above, and has a furnace (2
) The gas used in F) is transferred from the gas outlet (7) to the furnace (2).
＞The gas heated to a high temperature in the furnace (2) is discharged outside, but the problem is that the gas is discharged at a high temperature, resulting in wasted thermal energy. The invention was made to solve the above-mentioned problems, and its purpose is to reuse the thermal energy of the exhausted gas and to obtain a semiconductor substrate processing apparatus that reduces the loss of energy. 0 (Means for Solving Problem 111) In the semiconductor substrate processing apparatus according to the present invention, the gas retention section for temporarily retaining the gas discharged from the exhaust port and the gas introduction pipe for introducing the raw material gas are arranged as described above. Penetrates the inside of the gas reservoir and after death,
It is equipped with a heat exchange means constituted by an introduction part connected to a gas introduction port of the semiconductor processing means main body.

[Effect]

In this invention, thermal energy can be reused by providing a heat exchange means in the main body of the semiconductor processing means. [Embodiment] Hereinafter, an embodiment of the present invention will be described with reference to the drawings. 1st
The figure is a diagram of this invention! 1 is a cross-sectional view of a semiconductor substrate processing apparatus showing an example. In the figure, (1) to (7) are equivalent to those in the conventional example.

(8) is a heat exchanger, which includes a hollow chamber (8a) made of quartz, a pipe (8b) made of quartz that passes through the chamber (8&) while bending, and a gas exhaust port (8o).
), and is connected to the gas exhaust port (7) of the semiconductor substrate processing apparatus consisting of (1) to (7). Also,
αG is a gas pipe for supplying gas from the raw material gas cylinder (6) into the furnace (2), and this gas pipe 00
is the raw material gas cylinder (6) and the pipe (8) inside the heat exchanger (8).
b) and the pipe (lo&) connecting it to the heat exchanger (
8) Inner pipe (8b) and gas supply port (5) in the furnace (2)
It consists of a quartz vibrator (lob) connected to the Since the semiconductor substrate processing apparatus according to one embodiment of the present invention is configured as described above, the gas used is heated to a high temperature in the furnace (2) and the gas is discharged through the gas exhaust port (7) of the semiconductor substrate processing apparatus. ) is introduced into the heat exchanger # (8) and passes through the heat exchanger (8).
b) Performs heat exchange with the raw material gas in

As a result, the raw material gas in the pipe (8b) is warmed and supplied into the furnace (2) through the gas supply port (5).

As described above, the gas discharged during the processing of the semiconductor substrate (1) is not discharged in the Ki* temperature state as in the conventional case, but the thermal energy is reused. According to this invention, since a heat exchanger is connected to a semiconductor substrate processing apparatus, an excellent effect of improving energy efficiency can be obtained.

[Brief explanation of drawings]

FIG. 1 is a sectional view of a semiconductor substrate processing apparatus showing an embodiment of the present invention, and FIG. 2 is a sectional view of a conventional semiconductor substrate processing apparatus. In the figure, (2) is the furnace, (4) is the heater, (5) is the gas supply port, (6) is the raw gas cylinder, (7) is the gas discharge port, (8) is the heat exchanger, and (9) is the The gas exhaust port ao is a gas pipe. In each figure, the same reference numerals indicate the same or equivalent parts. Agent Masuo Oiwa

Claims (1)

[Claims] A semiconductor substrate processing means body into which raw material gas is introduced to process semiconductor substrates, a gas exhaust port for discharging the gas used in the semiconductor substrate processing means body, and a gas discharge port for discharging the gas discharged from the exhaust port. A heat treatment system consisting of a gas accumulation section in which the gas accumulates, and a gas introduction section that is connected to the gas introduction port of the semiconductor processing means main body after the gas introduction pipe for introducing the raw material gas passes through the gas accumulation section. A semiconductor substrate processing device consisting of an exchange means.