JPH04367106A - High frequency amplifier circuit for fm - Google Patents

High frequency amplifier circuit for fm

Info

Publication number
JPH04367106A
JPH04367106A JP23855791A JP23855791A JPH04367106A JP H04367106 A JPH04367106 A JP H04367106A JP 23855791 A JP23855791 A JP 23855791A JP 23855791 A JP23855791 A JP 23855791A JP H04367106 A JPH04367106 A JP H04367106A
Authority
JP
Japan
Prior art keywords
circuit
impedance
tuning circuit
high frequency
conversion element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP23855791A
Other languages
Japanese (ja)
Other versions
JP3134127B2 (en
Inventor
Tamaki Ohashi
大橋 環
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYUUNAA KK
Original Assignee
CHIYUUNAA KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYUUNAA KK filed Critical CHIYUUNAA KK
Priority to JP03238557A priority Critical patent/JP3134127B2/en
Publication of JPH04367106A publication Critical patent/JPH04367106A/en
Application granted granted Critical
Publication of JP3134127B2 publication Critical patent/JP3134127B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Amplifiers (AREA)
  • Input Circuits Of Receivers And Coupling Of Receivers And Audio Equipment (AREA)

Abstract

PURPOSE:To improve image interference characteristic while maintaining the high degree of selection in the high frequency amplifier circuit for FM. CONSTITUTION:On the output side of a pi type tuning circuit 9 in the front stage, a gate set to the high impedance of an impedance conversion element 10 consisting of an FET is connected. The input signal is converted into low impedance. It is inputted from the source to the pi type tuning circuit 13 in the rear stage.

Description

【発明の詳細な説明】[Detailed description of the invention]

【0001】0001

【産業上の利用分野】本願は、FM用ラジオ受信機にお
ける高周波増幅回路に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present application relates to a high frequency amplification circuit in an FM radio receiver.

【0002】0002

【従来の技術】従来FM用ラジオ受信機において、その
イメージ妨害特性を改善するために、高周波同調回路の
段数を多くする方法が採られていた。
2. Description of the Related Art Conventionally, in order to improve the image interference characteristics of FM radio receivers, a method has been adopted in which the number of stages of high frequency tuning circuits is increased.

【0003】0003

【発明が解決しようとする課題】ところが高周波同調回
路の段数を多くすることは、それ丈同調コイルの数も増
加することになるが、一般に基板にプリント配線を行う
場合、コイル素子が比較的大きなスペースを要し、この
ため同調コイル数が増加することはプリント配線上好ま
しくはなく、特に小形化が要求される例えば車載用のF
M用ラジオ受信機の高周波回路としては不向きであると
共に、高周波同調回路においては当然エネルギーの消費
が生じるので、その段数が増すとそれを補正するために
増幅回路の増加も必要となるなどの不都合があった。
[Problem to be Solved by the Invention] However, increasing the number of stages in a high frequency tuning circuit means increasing the number of length tuning coils, but generally when printed wiring is done on a board, the coil element is relatively large. This requires space, and an increase in the number of tuning coils is not desirable in terms of printed wiring.
Not only is it unsuitable for high frequency circuits in M radio receivers, but also because high frequency tuning circuits naturally consume energy, increasing the number of stages requires increasing the number of amplifier circuits to compensate for this. was there.

【0004】0004

【課題を解決するための手段】本願は同調回路の選択度
特性を有効に利用して、上記した従来の不都合を改善し
たもので、π型から成る前段の同調回路の出力側に該同
調回路側からみてインピーダンスの高いインピーダンス
変換素子を接続すると共に、該インピーダンス変換素子
の低いインピーダンス側にπ型から成る後段の同調回路
を接続し、この後段の同調回路を周波数変換回路の入力
端に接続したことを特徴とするものであり、さらに上記
した構成において、後段の同調回路と周波数変換回路の
入力端との間に、インピーダンス変換素子を接続すると
共に、その高いインピーダンス側を後段の同調回路の出
力側に、またその低いインピーダンス側を前記周波数変
換回路の入力端に夫々接続して成るものである。
[Means for Solving the Problems] The present invention effectively utilizes the selectivity characteristics of a tuning circuit to improve the above-mentioned conventional disadvantages. An impedance conversion element having a high impedance when viewed from the side is connected, and a π-type later-stage tuning circuit is connected to the low-impedance side of the impedance conversion element, and this latter-stage tuning circuit is connected to the input end of the frequency conversion circuit. Further, in the above configuration, an impedance conversion element is connected between the downstream tuning circuit and the input terminal of the frequency conversion circuit, and the high impedance side is connected to the output of the downstream tuning circuit. and its low impedance side is connected to the input end of the frequency conversion circuit.

【0005】[0005]

【作用】しかしてアンテナ入力信号が前段の同調回路に
より選択されたのち、インピーダンス変換素子に入力す
るが、その入力信号は前段の同調回路にて高インピーダ
ンスで共振されており、従って該回路の出力を高インピ
ーダンスに設定されたインピーダンス変換素子に入力す
ることで高い選択度が維持される。そしてインピーダン
ス変換素子において低インピーダンスに変換された信号
が、後段の同調回路に入力するので、整合による損失が
生じることなく、再度選択される。
[Operation] After the antenna input signal is selected by the tuning circuit in the previous stage, it is input to the impedance conversion element, but the input signal is resonated at a high impedance in the tuning circuit in the previous stage, so the output of the circuit is A high degree of selectivity is maintained by inputting this into an impedance conversion element set to a high impedance. Since the signal converted to a low impedance in the impedance conversion element is input to the subsequent tuning circuit, it is selected again without any loss due to matching.

【0006】[0006]

【実施例】以下図面にもとづいて本願の実施例を詳述す
ると、図1において、アンテナ入力端子1に、同調コイ
ル2と一対の同調用可変容量ダイオード3a,3bとか
ら成るバンドパス型のアンテナ同調回路4及び一対のピ
ンダイオードから成る減衰回路5が夫々接続してあり、
その出力端に結合コンデンサC1を介してMOSFET
から成る高周波増幅素子6の第1ゲートg1が接続して
あり、そのドレンdの出力は結合コンデンサC2を介し
て同調コイル7と一対の可変容量ダイオード8a,8b
から成るπ型の高周波同調回路9に接続してある。前記
高周波同調回路9の出力端には、FETから成るインピ
ーダンス変換素子10のゲートgが接続されると共に、
そのソースSに結合コンデンサC3を介して同調コイル
11と一対の同調用可変容量ダイオード12a,12b
とから成るπ型の後段の高周波同調回路13が接続され
、その出力端が結合コンデンサC4を介して周波数変換
回路14、中間周波数増幅回路14及び利得制御回路1
6から成るFMフロントエンドIC(例えば三洋電機製
LA1175)17の周波数変換回路14の入力端子で
ある第5端子に接続され、周波数変換回路14の出力端
子である第8及び第9端子が中間周波トランスTの1次
側コイルに接続され、その2次側コイルが、抵抗R1と
フィルタFの直列回路を介して中間周波数増幅回路15
の入力端子である第12端子に接続され、該回路15を
介してその出力端子である第15端子が接続されており
、また中間周波トランスTの2次側が抵抗R2とコンデ
ンサC5の直列回路を介し利得制御回路16の入力端子
である第10端子に接続され、該回路16を介して前記
減衰回路5に駆動信号を出力する第6端子が接続してあ
ると共に、前記利得制御回路16のAGC信号出力端子
である第13端子には、前記MOSFETの第2ゲート
g2が接続され、これにLo/DX端子18が接続され
ている。
[Embodiment] An embodiment of the present application will be described below in detail based on the drawings. In FIG. 1, a band-pass type antenna is connected to an antenna input terminal 1, and includes a tuning coil 2 and a pair of tuning variable capacitance diodes 3a and 3b. A tuning circuit 4 and an attenuation circuit 5 consisting of a pair of pin diodes are connected to each other,
A MOSFET is connected to its output terminal via a coupling capacitor C1.
The first gate g1 of a high frequency amplifying element 6 consisting of
It is connected to a π-type high frequency tuning circuit 9 consisting of. A gate g of an impedance conversion element 10 consisting of an FET is connected to the output end of the high frequency tuning circuit 9, and
A tuning coil 11 and a pair of tuning variable capacitance diodes 12a, 12b are connected to the source S via a coupling capacitor C3.
A π-type rear-stage high frequency tuning circuit 13 consisting of
The FM front end IC (for example LA1175 manufactured by Sanyo Electric) 17 is connected to the fifth terminal which is the input terminal of the frequency conversion circuit 14, and the eighth and ninth terminals which are the output terminals of the frequency conversion circuit 14 are connected to the intermediate frequency It is connected to the primary coil of the transformer T, and the secondary coil is connected to the intermediate frequency amplification circuit 15 via a series circuit of a resistor R1 and a filter F.
The secondary side of the intermediate frequency transformer T is connected to the 12th terminal, which is the input terminal of the intermediate frequency transformer T, and the 15th terminal, which is the output terminal thereof, is connected via the circuit 15. A sixth terminal is connected to the tenth terminal, which is the input terminal of the gain control circuit 16, and outputs a drive signal to the attenuation circuit 5 through the circuit 16. The second gate g2 of the MOSFET is connected to the thirteenth terminal, which is the signal output terminal, and the Lo/DX terminal 18 is connected to this.

【0007】しかして、アンテナ入力端子に入力した入
力信号は、アンテナ同調回路4で選択されたのち、結合
コンデンサC1を介してMOSFET6の第1ゲートg
1に入力して増幅され、そのドレンから増幅出力が結合
コンデンサC2を介してπ型の高周波同調回路9に入力
し、該回路9で再び選択されてドレンが接地接続された
インピーダンス変換素子10のゲートgに入力する。上
記において入力信号は、π型の高周波同調回路9にて高
インピーダンスで共振されており、従って該回路9の出
力を高インピーダンスに設定されたインピーダンス変換
素子10のゲートgに入力するので、高い選択度を維持
することができる。
[0007] Thus, the input signal input to the antenna input terminal is selected by the antenna tuning circuit 4 and then passed through the coupling capacitor C1 to the first gate g of the MOSFET 6.
1 and is amplified, and the amplified output from its drain is input to a π-type high frequency tuning circuit 9 via a coupling capacitor C2, where it is selected again and the impedance conversion element 10 whose drain is connected to ground. input to gate g. In the above, the input signal is resonated at high impedance in the π-type high frequency tuning circuit 9, and therefore, the output of the circuit 9 is input to the gate g of the impedance conversion element 10 set to high impedance, so it is highly selective. degree can be maintained.

【0008】そして前記インピーダンス変換素子10に
入力した信号は、信号電圧を増減することなく低出力イ
ンピーダンスに変換されて、そのソースSからπ型の後
段の高周波同調回路13に出力されるので、整合による
損失を生じることなく、再度高周波同調回路13により
選択されたのち結合コンデンサC4を介してFMフロン
トエンドIC17の周波数変換回路14に第5端子から
入力し、中間周波信号に変換されて第8端子及び第9端
子より夫々出力し、その出力は中間周波数トランスT及
び抵抗R1とセラミックフィルタFとの直列回路を介し
て第12端子より中間周波増幅回路15に入力して増幅
され、その増幅出力は第15端子から検波段に出力され
る。
The signal input to the impedance conversion element 10 is converted to a low output impedance without increasing or decreasing the signal voltage, and is output from the source S to the π-type subsequent high frequency tuning circuit 13, so that matching is achieved. After being selected again by the high frequency tuning circuit 13 without causing any loss due to and the ninth terminal respectively, and the output thereof is input to the intermediate frequency amplification circuit 15 from the twelfth terminal through a series circuit of the intermediate frequency transformer T, the resistor R1, and the ceramic filter F, and is amplified, and the amplified output is The signal is output from the 15th terminal to the detection stage.

【0009】また中間周波トランスTを経た広帯域の中
間周波信号の一部は、抵抗R2とコンデンサC5の直列
回路を介して第10端子より利得制御回路16に入力し
、該回路16から減衰回路5のピンダイオード駆動用の
AGC電圧と、高周波増幅素子6の制御用のAGC電圧
とが生じ、これらのAGC電圧は、第6端子及び第13
端子より夫々出力して、減衰回路5においてはアンテナ
入力信号の電界強度に応じて該信号を減衰し、また高周
波増幅素子6においては電界強度に応じてその増幅率を
制御する。
A part of the wideband intermediate frequency signal that has passed through the intermediate frequency transformer T is inputted from the tenth terminal to the gain control circuit 16 via a series circuit of a resistor R2 and a capacitor C5, and from the circuit 16 to the attenuation circuit 5. An AGC voltage for driving the pin diode and an AGC voltage for controlling the high frequency amplification element 6 are generated, and these AGC voltages are applied to the sixth terminal and the thirteenth terminal.
The antenna input signal is outputted from each terminal, and the attenuation circuit 5 attenuates the signal according to the electric field strength of the antenna input signal, and the high frequency amplification element 6 controls the amplification factor according to the electric field strength.

【0010】図2は上記した実施例において、第2の高
周波同調回路13の出力側に、さらにドレンが接地接続
されたFETから成るインピーダンス変換素子19を接
続すると共に、その出力端を結合コンデンサC4を介し
てFMフロントエンドIC17の第5端子に接続した場
合の他の実施例を示しており、この構成の場合も、後段
の高周波同調回路13にて高インピーダンスで共振され
た出力信号が、入力インピーダンスの高く設定されたイ
ンピーダンス変換素子19のゲートgに入力することで
高い選択度を維持でき、かつ、インピーダンス変換素子
19のソースより低インピーダンスに変換されたのち、
結合コンデンサC4を介してFMフロントエンドIC1
7に入力する。
FIG. 2 shows that in the above-mentioned embodiment, an impedance conversion element 19 consisting of an FET whose drain is connected to ground is further connected to the output side of the second high frequency tuning circuit 13, and its output end is connected to a coupling capacitor C4. Another embodiment is shown in which the output signal is connected to the fifth terminal of the FM front end IC 17 via a High selectivity can be maintained by inputting the input to the gate g of the impedance conversion element 19 whose impedance is set to high, and after being converted to a lower impedance than the source of the impedance conversion element 19,
FM front end IC1 via coupling capacitor C4
Enter 7.

【0011】[0011]

【発明の効果】以上のように本願によれば、同調回路と
して、共振インピーダンスが高く、高い選択度が得られ
るπ型の同調回路を採用し、かつ、同調回路間にインピ
ーダンス変換素子を接続して前段の同調回路の出力を高
インピーダンスで受容して後段の同調回路に低インピー
ダンスで出力するように構成したので、同調回路におけ
る選択度を有効に利用できてイメージ妨害特性の向上を
はかることができ、かつ、これによって同調回路の段数
の増加を抑えることができるので、プリント基板の小型
化に有効であり、また請求項2記載の構成によれば、さ
らに選択性能を高く維持することができるという利点を
有する。
[Effects of the Invention] As described above, according to the present application, a π-type tuning circuit with high resonant impedance and high selectivity is adopted as the tuning circuit, and an impedance conversion element is connected between the tuning circuits. Since the output of the tuning circuit in the preceding stage is received at high impedance and outputted at low impedance to the tuning circuit in the succeeding stage, the selectivity in the tuning circuit can be effectively utilized and the image disturbance characteristics can be improved. In addition, since the increase in the number of stages of the tuning circuit can be suppressed, it is effective in downsizing the printed circuit board, and according to the structure of claim 2, the selection performance can be maintained even higher. It has the advantage of

【図面の簡単の説明】[Brief explanation of the drawing]

【図1】電気回路図[Figure 1] Electrical circuit diagram

【図2】他の実施例における電気回路図[Figure 2] Electrical circuit diagram in another embodiment

【符号の説明】[Explanation of symbols]

1  アンテナ入力端子 4  アンテナ同調回路 6  MOSFET 9,13  π型の高周波増幅回路 10,19  インピーダンス変換素子17  FMフ
ロントエンドIC
1 Antenna input terminal 4 Antenna tuning circuit 6 MOSFET 9, 13 π-type high frequency amplification circuit 10, 19 Impedance conversion element 17 FM front end IC

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】  π型から成る前段の同調回路の出力側
に該同調回路側からみてインピーダンスの高いインピー
ダンス変換素子を接続すると共に、該インピーダンス変
換素子の低いインピーダンス側にπ型から成る後段の同
調回路を接続し、この後段の同調回路を周波数変換回路
の入力端に接続したことを特徴とするFM用高周波増幅
回路。
Claim 1: An impedance conversion element having a high impedance as viewed from the tuning circuit side is connected to the output side of a π-type front-stage tuning circuit, and a π-type rear-stage tuning circuit is connected to the low impedance side of the impedance conversion element. 1. A high frequency amplifier circuit for FM, characterized in that a tuning circuit in the latter stage is connected to an input end of a frequency conversion circuit.
【請求項2】  請求項1において、後段の同調回路と
周波数変換回路の入力端との間に、インピーダンス変換
素子を接続すると共に、その高いインピーダンス側を後
段の同調回路の出力側に、またその低いインピーダンス
側を前記周波数変換回路の入力端に夫々接続したことを
特徴とするFM用高周波増幅回路。
2. In claim 1, an impedance conversion element is connected between the downstream tuning circuit and the input terminal of the frequency conversion circuit, and the high impedance side thereof is connected to the output side of the downstream tuning circuit, and the impedance conversion element is connected between the downstream tuning circuit and the input terminal of the frequency conversion circuit. A high frequency amplifier circuit for FM, characterized in that a low impedance side is connected to an input terminal of the frequency conversion circuit.
JP03238557A 1991-06-13 1991-06-13 High frequency amplifier circuit for FM Expired - Fee Related JP3134127B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP03238557A JP3134127B2 (en) 1991-06-13 1991-06-13 High frequency amplifier circuit for FM

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP03238557A JP3134127B2 (en) 1991-06-13 1991-06-13 High frequency amplifier circuit for FM

Publications (2)

Publication Number Publication Date
JPH04367106A true JPH04367106A (en) 1992-12-18
JP3134127B2 JP3134127B2 (en) 2001-02-13

Family

ID=17032013

Family Applications (1)

Application Number Title Priority Date Filing Date
JP03238557A Expired - Fee Related JP3134127B2 (en) 1991-06-13 1991-06-13 High frequency amplifier circuit for FM

Country Status (1)

Country Link
JP (1) JP3134127B2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6800244B2 (en) 1999-11-17 2004-10-05 Corus L.P. Aluminum brazing alloy
US6610247B2 (en) 1999-11-17 2003-08-26 Corus Aluminium Walzprodukte Gmbh Aluminum brazing alloy

Also Published As

Publication number Publication date
JP3134127B2 (en) 2001-02-13

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