JPH0436268U - - Google Patents
Info
- Publication number
- JPH0436268U JPH0436268U JP1990077611U JP7761190U JPH0436268U JP H0436268 U JPH0436268 U JP H0436268U JP 1990077611 U JP1990077611 U JP 1990077611U JP 7761190 U JP7761190 U JP 7761190U JP H0436268 U JPH0436268 U JP H0436268U
- Authority
- JP
- Japan
- Prior art keywords
- laser diode
- semiconductor laser
- light emitting
- optical
- converts
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 5
- 230000003287 optical effect Effects 0.000 claims description 4
- 238000000605 extraction Methods 0.000 claims 1
- 230000004907 flux Effects 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Optical Couplings Of Light Guides (AREA)
Description
第１図はこの考案の一実施例の３つの光導波路
を採用した半導体レーザダイオードの斜視図で、
第２図は上面図である。第３図は従来の半導体レ
ーザダイオードの斜視図で、第４図は断面図であ
る。
１……半導体レーザダイオード、２ａ，２ｂ，
２ｃ……表面電極、３ａ，３ｂ，３ｃ……ボンデ
イングワイヤ、４ａ，４ｂ，４ｃ……光導波路、
５ａ，５ｂ，５ｃ……発光部、６ａ，６ｂ，６ｃ
……光束、７……光フアイバ、８……交点。
FIG. 1 is a perspective view of a semiconductor laser diode that employs three optical waveguides according to an embodiment of this invention.
FIG. 2 is a top view. FIG. 3 is a perspective view of a conventional semiconductor laser diode, and FIG. 4 is a sectional view. 1... Semiconductor laser diode, 2a, 2b,
2c... surface electrode, 3a, 3b, 3c... bonding wire, 4a, 4b, 4c... optical waveguide,
5a, 5b, 5c... Light emitting part, 6a, 6b, 6c
...Light flux, 7...Optical fiber, 8...Intersection.
Claims (1)
オードの光導出機構において、１つのレーザダイ
オード素子に複数の光導波路、またそれに対応す
る複数の発光部を有することを特徴とする半導体
レーザーダイオード。 1. A semiconductor laser diode, which is characterized in that it has a plurality of optical waveguides in one laser diode element and a plurality of light emitting parts corresponding thereto, in a light extraction mechanism for a semiconductor laser diode that converts an electrical signal into an optical signal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1990077611U JPH0436268U (en) | 1990-07-20 | 1990-07-20 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1990077611U JPH0436268U (en) | 1990-07-20 | 1990-07-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0436268U true JPH0436268U (en) | 1992-03-26 |
Family
ID=31620158
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1990077611U Pending JPH0436268U (en) | 1990-07-20 | 1990-07-20 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0436268U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009117746A (en) * | 2007-11-09 | 2009-05-28 | Anritsu Corp | External resonator type semiconductor laser device |
| JP2012195545A (en) * | 2011-03-18 | 2012-10-11 | Seiko Epson Corp | Terahertz wave generating device, camera, imaging device and measuring device |
| JP2013104804A (en) * | 2011-11-15 | 2013-05-30 | Seiko Epson Corp | Semiconductor short pulse generating device, terahertz-wave generating device, camera, imaging device, and measuring device |
-
1990
- 1990-07-20 JP JP1990077611U patent/JPH0436268U/ja active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009117746A (en) * | 2007-11-09 | 2009-05-28 | Anritsu Corp | External resonator type semiconductor laser device |
| JP2012195545A (en) * | 2011-03-18 | 2012-10-11 | Seiko Epson Corp | Terahertz wave generating device, camera, imaging device and measuring device |
| JP2013104804A (en) * | 2011-11-15 | 2013-05-30 | Seiko Epson Corp | Semiconductor short pulse generating device, terahertz-wave generating device, camera, imaging device, and measuring device |