JPH04359461A - Lead frame for resin-sealed semiconductor device - Google Patents
Lead frame for resin-sealed semiconductor deviceInfo
- Publication number
- JPH04359461A JPH04359461A JP13452691A JP13452691A JPH04359461A JP H04359461 A JPH04359461 A JP H04359461A JP 13452691 A JP13452691 A JP 13452691A JP 13452691 A JP13452691 A JP 13452691A JP H04359461 A JPH04359461 A JP H04359461A
- Authority
- JP
- Japan
- Prior art keywords
- lead
- lead frame
- resin
- adhesive
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 21
- 239000000853 adhesive Substances 0.000 abstract description 10
- 230000001070 adhesive effect Effects 0.000 abstract description 10
- 239000012790 adhesive layer Substances 0.000 abstract description 7
- 230000000694 effects Effects 0.000 description 2
- 241000252185 Cobitidae Species 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/4826—Connecting between the body and an opposite side of the item with respect to the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73215—Layer and wire connectors
Landscapes
- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
【0001】0001
【産業上の利用分野】本発明は、樹脂封止型半導体装置
用リードフレームに関し、特にLOC(Lead O
n Chip)用リードフレームに関する。[Field of Industrial Application] The present invention relates to a lead frame for a resin-sealed semiconductor device, and particularly to a lead frame for a resin-sealed semiconductor device.
n Chip) lead frame.
【0002】0002
【従来の技術】従来のLOC用リードフレームは、図4
に示す様に内部リード1Cの下に両面に接着層を有する
テープ2が接着されている。半導体素子3は、テープ2
の下面に貼り付けられるような形で固着されて搭載され
る。次に、Auワイヤ4によって内部リード1Cと半導
体素子3とが電気的に接続される。[Prior Art] A conventional lead frame for LOC is shown in FIG.
As shown in the figure, a tape 2 having adhesive layers on both sides is adhered below the internal lead 1C. The semiconductor element 3 is attached to the tape 2
It is attached and installed in such a way that it can be pasted on the underside of the . Next, the internal lead 1C and the semiconductor element 3 are electrically connected by the Au wire 4.
【0003】この様にLOC用リードフレームは、内部
リード1Cが半導体素子3の上部に引き回せるため、半
導体素子の周辺に内部リード1aを引き回す領域を必要
としない。従ってLOCの樹脂封止型半導体装置は、半
導体素子搭載部を有し、その上部に半導体素子3を搭載
し、その周辺に内部リードを引き回す樹脂封止型半導体
素子に比べてより大きな半導体素子が搭載できる。[0003] In this way, the LOC lead frame does not require an area around the semiconductor element to route the internal leads 1a because the internal leads 1C can be routed above the semiconductor element 3. Therefore, the resin-sealed semiconductor device of LOC has a semiconductor element mounting part, the semiconductor element 3 is mounted on the upper part, and the semiconductor element is larger than the resin-sealed semiconductor device which has internal leads routed around it. Can be installed.
【0004】0004
【発明が解決しようとする課題】この従来のLOC用リ
ードフレームでは、内部リード1Cの下面が平面である
ために、滑りやすくなっており、そのためボンディング
時において内部リード1Cが動いてしまい、内部リード
1CとAuリード4との接合が不十分になってしまう問
題点がある。[Problems to be Solved by the Invention] In this conventional LOC lead frame, the lower surface of the internal lead 1C is flat, making it slippery. Therefore, the internal lead 1C moves during bonding, causing the internal lead to slip. There is a problem that the bonding between 1C and the Au lead 4 becomes insufficient.
【0005】本発明の目的は、このような問題を解決し
、内部リードのずれをなくし、Auリードとその接合を
良好にできる樹脂封止型半導体装置用リードフレームを
提供することにある。SUMMARY OF THE INVENTION An object of the present invention is to provide a lead frame for a resin-sealed semiconductor device that can solve these problems, eliminate misalignment of internal leads, and improve the bonding between Au leads and the leads.
【0006】[0006]
【課題を解決するための手段】本発明の構成は、内部リ
ードの下部に半導体素子を固着して搭載してなる樹脂封
止型半導体装置用リードフレームにおいて、前記内部リ
ードはその下面に凹部又はスルーホールを備えたことを
特徴とする。[Means for Solving the Problems] The present invention provides a lead frame for a resin-sealed semiconductor device in which a semiconductor element is fixedly mounted on the lower part of an internal lead, in which the internal lead has a recess or It is characterized by having a through hole.
【0007】[0007]
【実施例】図1は本発明の第一の実施例のLOC用リー
ドフレームの断面図である。図のように、内部リード1
はその下面がエッチングにより球面状に凹部5を設けら
れている。この凹部5にテープ2の上面の接着層が入り
こんで、内部リード1は滑りにくくなっている。さらに
、平面の場合より接着層と内部リード1の接着面が増加
するため、内部リード1とテープ2との接着力も向上す
る。DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 is a sectional view of a lead frame for LOC according to a first embodiment of the present invention. As shown, internal lead 1
has a spherical recess 5 formed on its lower surface by etching. The adhesive layer on the upper surface of the tape 2 enters the recess 5, making it difficult for the internal lead 1 to slip. Furthermore, since the adhesive surface between the adhesive layer and the internal lead 1 is increased compared to the case of a flat surface, the adhesive strength between the internal lead 1 and the tape 2 is also improved.
【0008】図2は本発明の第二の実施例のLOC用リ
ードフレームの断面図である。この実施例では、凹部5
aがプレスによりVノッチの形で内部リード1aの下面
に設けられている。FIG. 2 is a sectional view of a lead frame for LOC according to a second embodiment of the present invention. In this embodiment, the recess 5
A is provided in the form of a V-notch on the lower surface of the internal lead 1a by pressing.
【0009】図3は本発明の第三の実施例のLOC用リ
ードフレームの断面図である。前記2例の場合、半導体
素子3をテープ2に貼り付ける際に凹部5,5aに空気
が侵入してしまい、テープ2の接着層の接着剤が十分に
凹部に入り込まないという不具合が発生する可能性があ
る。そのため、本実施例では、凹部5,5aの代りにス
ルーホール6を設けることにより、内部リード1bの下
面の空気が抜ける様にして確実にテープ2の接着層の接
着剤がスルーホール6に入り込むようにしている。FIG. 3 is a sectional view of a lead frame for LOC according to a third embodiment of the present invention. In the above two cases, when attaching the semiconductor element 3 to the tape 2, air may enter the recesses 5, 5a, and a problem may occur in which the adhesive of the adhesive layer of the tape 2 does not fully enter the recesses. There is sex. Therefore, in this embodiment, by providing a through hole 6 instead of the recesses 5 and 5a, the air on the lower surface of the internal lead 1b is released, and the adhesive of the adhesive layer of the tape 2 is ensured to enter the through hole 6. That's what I do.
【0010】0010
【発明の効果】以上説明したように本発明は、テープの
接着層の接着剤がリードフレームの凹部やスルーホール
に入りこむ様にして、内部リードを滑りにくくし、さら
にテープとの接着面が増加したのでテープと内部リード
の接着力が向上し、平面の内部リードの場合に比べてさ
らに滑りにくくなっている。このような効果から従来は
2〜3%発生していた内部リードの滑りによるボンディ
ング不良が無くなったという効果が得られている。[Effects of the Invention] As explained above, the present invention allows the adhesive in the adhesive layer of the tape to enter the recesses and through holes of the lead frame, making the internal leads less likely to slip, and further increasing the adhesive surface with the tape. This improves the adhesion between the tape and the internal leads, making them even more difficult to slip compared to flat internal leads. These effects have resulted in the elimination of bonding defects due to internal lead slippage, which conventionally occurred at 2 to 3%.
【図1】本発明の第一の実施例のLOC用リードフレー
ムの断面図。FIG. 1 is a sectional view of a lead frame for LOC according to a first embodiment of the present invention.
【図2】本発明の第二の実施例のLOC用リードフレー
ムの断面図。FIG. 2 is a sectional view of a LOC lead frame according to a second embodiment of the present invention.
【図3】本発明の第三の実施例のLOC用リードフレー
ムの断面図。FIG. 3 is a sectional view of a lead frame for LOC according to a third embodiment of the present invention.
【図4】従来例のLOC用リードフレームの断面図。FIG. 4 is a sectional view of a conventional LOC lead frame.
1 内部リード 2 テープ 3 半導体素子 4 Auワイヤ 5,5a 凹部 6 スルーホール 1 Internal lead 2 Tape 3 Semiconductor device 4 Au wire 5, 5a Recessed part 6 Through hole
Claims (1)
して搭載してなる樹脂封止型半導体装置用リードフレー
ムにおいて、前記内部リードはその下面に凹部又はスル
ーホールを備えたことを特徴とする樹脂封止型半導体装
置用リードフレーム。1. A lead frame for a resin-sealed semiconductor device in which a semiconductor element is fixedly mounted on the lower part of an internal lead, characterized in that the internal lead is provided with a recess or a through hole on its lower surface. Lead frame for resin-sealed semiconductor devices.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13452691A JP2970060B2 (en) | 1991-06-06 | 1991-06-06 | Lead frame for resin-sealed semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13452691A JP2970060B2 (en) | 1991-06-06 | 1991-06-06 | Lead frame for resin-sealed semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH04359461A true JPH04359461A (en) | 1992-12-11 |
JP2970060B2 JP2970060B2 (en) | 1999-11-02 |
Family
ID=15130384
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13452691A Expired - Fee Related JP2970060B2 (en) | 1991-06-06 | 1991-06-06 | Lead frame for resin-sealed semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2970060B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0712159A3 (en) * | 1994-11-08 | 1997-03-26 | Oki Electric Ind Co Ltd | Structure of resin molded type semiconductor |
US6531784B1 (en) * | 2000-06-02 | 2003-03-11 | Amkor Technology, Inc. | Semiconductor package with spacer strips |
-
1991
- 1991-06-06 JP JP13452691A patent/JP2970060B2/en not_active Expired - Fee Related
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0712159A3 (en) * | 1994-11-08 | 1997-03-26 | Oki Electric Ind Co Ltd | Structure of resin molded type semiconductor |
US6002181A (en) * | 1994-11-08 | 1999-12-14 | Oki Electric Industry Co., Ltd. | Structure of resin molded type semiconductor device with embedded thermal dissipator |
US6531784B1 (en) * | 2000-06-02 | 2003-03-11 | Amkor Technology, Inc. | Semiconductor package with spacer strips |
Also Published As
Publication number | Publication date |
---|---|
JP2970060B2 (en) | 1999-11-02 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |