JPH0430515A - Semiconductor processing equipment - Google Patents
Semiconductor processing equipmentInfo
- Publication number
- JPH0430515A JPH0430515A JP13739290A JP13739290A JPH0430515A JP H0430515 A JPH0430515 A JP H0430515A JP 13739290 A JP13739290 A JP 13739290A JP 13739290 A JP13739290 A JP 13739290A JP H0430515 A JPH0430515 A JP H0430515A
- Authority
- JP
- Japan
- Prior art keywords
- reaction chamber
- check
- door shutter
- flow rate
- flow controller
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 17
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 238000004519 manufacturing process Methods 0.000 claims description 14
- 238000009413 insulation Methods 0.000 abstract description 2
- 230000002441 reversible effect Effects 0.000 abstract description 2
- 238000011084 recovery Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 2
- 230000004308 accommodation Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】 〔産業上の利用分野〕 この発明は半導体製造装置に関するものである。[Detailed description of the invention] [Industrial application field] The present invention relates to semiconductor manufacturing equipment.
第4図から87図は従来の半導体製造装置の各工程を示
す断面図である。図において、(1)は複数の基板を塔
載する基板ボー) 、 (2)は基板ボート(l)を収
容して反応が行なわれる反応室となる反応管、(3)は
反応管(2)の外周に設けられ次加熱用ヒーター(4)
は基板ボート11)を反応室に収容及び回収を行ない、
反応室を減圧できるエンドキャップである。4 to 87 are cross-sectional views showing each process of a conventional semiconductor manufacturing apparatus. In the figure, (1) is a reaction tube (a substrate boat carrying a plurality of substrates), (2) is a reaction tube that accommodates a substrate boat (l) and serves as a reaction chamber in which a reaction is carried out, and (3) is a reaction tube (a ) is installed on the outer periphery of the heater for subsequent heating (4)
accommodates and recovers the substrate boat 11) in the reaction chamber,
This is an end cap that can reduce the pressure in the reaction chamber.
(5)はエンドキャップ(4)を上下することにょシ反
応呈端の開閉を行なう支柱、(6)は基板ボート(11
を反応室に収容及び回収する際、エンドキャップ(4)
を開ける時に一時的に反応室端を閉・関するドアシャッ
ターである。(7)はドアシャッター(6)を回転及び
上下させることにより、反応室端の開閉を行なう支柱で
ある。(8)は基板ボート(1)を反応室の中央に位置
させて処理を行なう保温筒、<9)tl;を基板に薄膜
を形成する半導体材料ガス(以下ガスと示す)の流量を
制御するガス流量コントローラ(以ドマスフローコント
ローラと呼ぶ)、Ql)はガスを反応室に導入するガス
導入管、αυはガス導入管□I’に納めであるカバーで
ある。(5) is a column that opens and closes the reaction end by raising and lowering the end cap (4); (6) is a substrate boat (11);
When storing and recovering the reaction chamber, the end cap (4)
This is a door shutter that temporarily closes the end of the reaction chamber when it is opened. (7) is a support that opens and closes the end of the reaction chamber by rotating and raising and lowering the door shutter (6). (8) is a heat insulating cylinder in which the substrate boat (1) is located in the center of the reaction chamber for processing, and <9) tl; is used to control the flow rate of semiconductor material gas (hereinafter referred to as gas) that forms a thin film on the substrate. A gas flow controller (hereinafter referred to as a mass flow controller), Ql) is a gas introduction pipe that introduces gas into the reaction chamber, and αυ is a cover that is housed in the gas introduction pipe □I'.
次に、半導体製造装置の製造工程について説明する。Next, the manufacturing process of the semiconductor manufacturing device will be explained.
まず、基板ボートC1)の収容について説明する。First, accommodation of the substrate boat C1) will be explained.
第4図と第5図に示すように、エンドキャンプ(4)を
開け、−時的にドアシャッター(6)を閉める。As shown in Figures 4 and 5, the end camp (4) is opened and the door shutter (6) is temporarily closed.
次に第6図に示すように、基板ボート(1)を保温筒(
8)に載せる。次に基板ボート(1)を反応室に収容す
る次め、ドアシャッター(6)を開ける。次に第7図に
示すようにエンドキャンプ(4)を閉め、基板ボート1
1)を反応室に収容する。Next, as shown in Figure 6, the substrate boat (1) is placed in the heat insulation tube (
8). Next, the substrate boat (1) is placed in the reaction chamber, and then the door shutter (6) is opened. Next, as shown in Figure 7, close the end camp (4) and close the substrate boat 1.
1) is placed in a reaction chamber.
次に基板の処理について説明する。Next, processing of the substrate will be explained.
まず、第7図の状態で反応室内を減圧状態にし。First, the pressure inside the reaction chamber is reduced in the state shown in Fig. 7.
ガスを反応室に流し、処理(薄膜形成)を行なう。Gas is flowed into the reaction chamber and processing (thin film formation) is performed.
処理後、ガスの排気を行ない、反応室内を常圧に戻す。After the treatment, the gas is exhausted and the pressure inside the reaction chamber is returned to normal pressure.
次に基板ボートmの収容とは逆の動作を行ない基板ボー
ド(1)の回収を行なう。Next, the operation opposite to that for housing the substrate boat m is performed to recover the substrate board (1).
ここで、基板に薄膜を形成する上で、ガスの流量精度及
び反応室内の減圧精度が、非常に厳しく要求されている
。Here, in forming a thin film on a substrate, very strict requirements are placed on gas flow rate accuracy and pressure reduction accuracy within the reaction chamber.
そこで、半導体製造装置の新規導入時及びマスフローコ
ントローラ(9)の交換時において、マスフローコント
ローラ(9)の流量チエツク及び反応室内の気密チエツ
クが必要とされる。マスフローコントローラ(9)の流
量チエツクを行なう際、エンドキャップ(4)を開き、
ドアシャッター(6)を閉める。次にガス導入管α1が
納まっているカバー圓を取り外す。次にガス導入管(I
Gを取り外し、その部分にマスフローコントローラ(9
)の流量をチエツクする薄膜流量計を取り付ける。次に
、マスフローコントローラ(9)の流量チエツクを行な
う。次にガス導入管αlを半導体製造装置に取り付は直
し、カバー其を取り付ける。次に、ドアシャッター(6
)を開け、エンドキャップ(4)を閉め処理待機状態に
戻す。次に、反応室内を減圧して気密チエツクを行なう
。Therefore, when newly introducing semiconductor manufacturing equipment or replacing the mass flow controller (9), it is necessary to check the flow rate of the mass flow controller (9) and the airtightness inside the reaction chamber. When checking the flow rate of the mass flow controller (9), open the end cap (4) and
Close the door shutter (6). Next, remove the cover ring in which the gas introduction pipe α1 is housed. Next, the gas introduction pipe (I
Remove G and install a mass flow controller (9) in that part.
) Install a thin film flow meter to check the flow rate. Next, check the flow rate of the mass flow controller (9). Next, the gas introduction pipe αl is reattached to the semiconductor manufacturing equipment, and the cover is attached. Next, the door shutter (6
) and close the end cap (4) to return to the processing standby state. Next, the pressure inside the reaction chamber is reduced to perform an airtightness check.
従来の半導体製造装置は以上のように構成されていたの
で、上記のような一連の作業を行なわなければマスフロ
ーコントローラの流量チエツク及び反応室内の気密チエ
ツクができないという問題点があった。Since conventional semiconductor manufacturing equipment was constructed as described above, there was a problem in that the flow rate of the mass flow controller and the airtightness inside the reaction chamber could not be checked unless the series of operations described above were performed.
この発明は上記のような問題点を解決するためになされ
たもので1反応室内を減圧できるドアシャッターを設け
、処理中を除いて常時閉めておくことにより、マスフロ
ーコントローラの流量チエツク及び反応室内の気密チエ
ツクを容易にできる半導体製造装置を得ることを目的と
する。This invention was made to solve the above-mentioned problems, and by providing a door shutter that can reduce the pressure inside the reaction chamber and keeping it closed at all times except during processing, the flow rate check of the mass flow controller and the inside of the reaction chamber can be checked. It is an object of the present invention to obtain a semiconductor manufacturing apparatus that can easily perform an airtight check.
この発明に係る半導体製造装置は、処理待機時に反応室
端を常時閉めて置き必要に応じて反応室内を減圧できる
ドアシャンターを設けたものであるO
〔作用〕
この発明におけるドア7ヤソメーは、処理待機時におい
て、エンドキャンプ(4)は下がっており、反応室内を
減圧できるドアシャンターは反応室端を閉めている状態
となる。そうすると、ガス導入管の納まっているカバー
を容易に取p外し及び取り付けが行なえ、よってマスフ
ローコy ) o −ラの流量チエツク及び反応室内の
気密チエツクを容易に行なうことができる。The semiconductor manufacturing apparatus according to the present invention is equipped with a door shunter that can keep the end of the reaction chamber closed at all times during standby for processing and reduce the pressure inside the reaction chamber as needed. At this time, the end camp (4) is lowered, and the door shunter that can reduce the pressure in the reaction chamber closes the end of the reaction chamber. Then, the cover in which the gas introduction pipe is housed can be easily removed and attached, and therefore the flow rate of the mass flow controller and the airtightness inside the reaction chamber can be easily checked.
以下、この発明の一実施例を図について説明するO
第1図〜第3図はこの発明の一実施例を示す半導体製造
装置の各工程を示す断面図で、図中符号(1)〜+51
、 (7)〜aυは前記従来のものと同一につきその
説明は省略する。図において、(2)は反応室内を減圧
できるドアシャッターである。Hereinafter, an embodiment of the present invention will be explained with reference to the drawings. Figs. 1 to 3 are cross-sectional views showing each process of a semiconductor manufacturing apparatus showing an embodiment of the present invention, and the reference numerals (1) to +51 in the figures are
, (7) to aυ are the same as those of the prior art, so their explanation will be omitted. In the figure, (2) is a door shutter that can reduce the pressure inside the reaction chamber.
このように構成され之半導体矢造装置において、処理待
機時にエンドキャンプ(4)は下げ、反応室内を減圧で
きるドアシャンター(6)は反応室端を閉めて置く。よ
って、必要に応じてマスフローコントローラ(9)の流
量チエツク及び反応室内の気密チエツクを容易に行なう
ことができる。In the semiconductor Yazo apparatus constructed as described above, the end camp (4) is lowered during standby for processing, and the door shunter (6) capable of reducing the pressure inside the reaction chamber is closed at the end of the reaction chamber. Therefore, it is possible to easily check the flow rate of the mass flow controller (9) and the airtightness inside the reaction chamber as needed.
次に動作について説明する。第1図から第2図に示すよ
うに、基板ボート(1)を保温筒に載せる。Next, the operation will be explained. As shown in FIGS. 1 and 2, a substrate boat (1) is placed on a heat insulating tube.
次に第3図に示すように、反応室に基板ボート11)を
収容する。基板ボート(1)の回収は上記とは逆の動作
によシ行なわれる。Next, as shown in FIG. 3, a substrate boat 11) is accommodated in the reaction chamber. Retrieval of the substrate boat (1) is performed by a reverse operation to that described above.
以上のようにこの発明によれば、処理待機時に反応室端
を常時閉めた状態で必要に応じて反応室内を減圧できる
ドアシャッターを設けたので、マスフローコントローラ
の流量チエツク及び反応室内の気密チエツクを容易に行
なうことができ、また、同様に処理待機時にエンドキャ
ップを下げた状態であるため、基板ボートを反応室へ収
容及び回収する時間が短縮され、よって処理時間を短縮
できる半導体製造装置が得られるという効果がある0As described above, according to the present invention, since a door shutter is provided that can reduce the pressure inside the reaction chamber as necessary with the end of the reaction chamber always closed during processing standby, it is possible to check the flow rate of the mass flow controller and the airtightness inside the reaction chamber. This can be easily carried out, and since the end cap is lowered while waiting for processing, the time required to accommodate and retrieve the substrate boat into the reaction chamber is shortened, thereby providing a semiconductor manufacturing apparatus that can shorten processing time. 0 has the effect of being
第1図・ないし第3図はこの発明の一実施例である半導
体製造装置の各工程を示す断面図、第4図ないし第7図
は従来の半導体製造装置の各工程を示す断面図である。
図において、O諺は反応室内を減圧できるドアシャッタ
ーである。
なお1図中、同一符号は同一 ま几は相当部分を示す。FIGS. 1 to 3 are cross-sectional views showing each process of a semiconductor manufacturing apparatus according to an embodiment of the present invention, and FIGS. 4 to 7 are cross-sectional views showing each process of a conventional semiconductor manufacturing apparatus. . In the figure, O proverb is a door shutter that can reduce the pressure inside the reaction chamber. In Figure 1, the same symbols indicate the same parts.
Claims (1)
める反応室端ドアシヤツーを設け、処理待機時に反応室
端を閉めて置くことにより、必要に応じて反応室を減圧
できるようにしたことを特徴とする半導体製造装置。We installed a door shaft at the end of the reaction chamber that can be temporarily closed when storing and recovering semiconductor substrates in the reaction chamber, and by keeping the end of the reaction chamber closed while waiting for processing, we were able to reduce the pressure in the reaction chamber as needed. Features of semiconductor manufacturing equipment.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13739290A JPH0430515A (en) | 1990-05-28 | 1990-05-28 | Semiconductor processing equipment |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13739290A JPH0430515A (en) | 1990-05-28 | 1990-05-28 | Semiconductor processing equipment |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0430515A true JPH0430515A (en) | 1992-02-03 |
Family
ID=15197606
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13739290A Pending JPH0430515A (en) | 1990-05-28 | 1990-05-28 | Semiconductor processing equipment |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0430515A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100505839B1 (en) * | 1997-03-12 | 2006-03-28 | 장익춘 | Pneumatic Lumbar Compression Bag |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6338316B2 (en) * | 1981-09-10 | 1988-07-29 | Fujitsu Ltd |
-
1990
- 1990-05-28 JP JP13739290A patent/JPH0430515A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6338316B2 (en) * | 1981-09-10 | 1988-07-29 | Fujitsu Ltd |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100505839B1 (en) * | 1997-03-12 | 2006-03-28 | 장익춘 | Pneumatic Lumbar Compression Bag |
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