JPH0428241A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPH0428241A
JPH0428241A JP2133220A JP13322090A JPH0428241A JP H0428241 A JPH0428241 A JP H0428241A JP 2133220 A JP2133220 A JP 2133220A JP 13322090 A JP13322090 A JP 13322090A JP H0428241 A JPH0428241 A JP H0428241A
Authority
JP
Japan
Prior art keywords
ball
pad
capillary
shape
pads
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2133220A
Other languages
Japanese (ja)
Inventor
Tetsuo Yabushita
薮下　哲男
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP2133220A priority Critical patent/JPH0428241A/en
Publication of JPH0428241A publication Critical patent/JPH0428241A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0555—Shape
    • H01L2224/05552—Shape in top view
    • H01L2224/05553—Shape in top view being rectangular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4845—Details of ball bonds
    • H01L2224/48451—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H01L2224/78302—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H01L2224/78302—Shape
    • H01L2224/78305—Shape of other portions
    • H01L2224/78307—Shape of other portions outside the capillary
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518—Translational movements
    • H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To reduce the pitch between pads and to reduce the size of a semiconductor chip by a method wherein the shape of balls bonded to the pads is formed into an elliptical shape extended in the directions perpendicular to the sides of a semiconductor element, which is provided with electrodes arranged on all sides. CONSTITUTION:The shape of a pressure bonding ball 2 bonded to a pad 1 is formed into an elliptical shape extended in the direction perpendicular to a side 4 of an IC 3. This is effective to make the diameter of the ball small, which is formed when the ball 2 is pressed and bonded to the pad, but when the diameter is made too small, a reduction in a strength of pressure bonding is generated. Therefore, the strength of pressure bonding can be held by forming the shape of the ball 2 into the elliptical shape extended in the direction perpendicular to the side 4. Thereby, in a plastic package, which is needed the arrangement of a multitude of pads and is provided with a multipin, the pitch between the pads can be made small and a reduction in the size of a semiconductor chip becomes possible.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体装置の製造方法に係り、さらに詳しくは
、半導体素子の電極と金属細線を接続する方法に関する
。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method of manufacturing a semiconductor device, and more particularly to a method of connecting electrodes of a semiconductor element and thin metal wires.

〔従来の技術〕[Conventional technology]

半導体装置は、一般に内部回路及び複数の外部接続用電
極（以下パッドと呼ぶ）が形成された半導体素子（以下
ＩＣと呼ぶ）の各パッドが対応するリードフレームある
いは配線パターンと金属細線（以下ワイヤーと呼ぶ）に
よって接続され、ＩＣが前記接続部とともに封止されて
いる。Semiconductor devices generally consist of a lead frame or wiring pattern and thin metal wires (hereinafter referred to as wires) to which each pad of a semiconductor element (hereinafter referred to as an IC) has an internal circuit and a plurality of external connection electrodes (hereinafter referred to as pads) formed thereon. ), and the IC is sealed together with the connection.

ここではパッドを接続する為に用いられるワイヤーの接
続方法（以下ワイヤーボンディングと呼ぶ）について述
べる。Here, we will discuss the wire connection method used to connect pads (hereinafter referred to as wire bonding).

ワイヤーボンディングの手段の１つとしてボールボンデ
ィングと呼ばれる、筒状でかつ先端が尖ったツール（以
下キャピラリーと呼ぶ）を使用する方法がある。手順は
下記の通りである。One method of wire bonding is a method called ball bonding, which uses a cylindrical tool with a sharp tip (hereinafter referred to as a capillary). The procedure is as follows.

■第６図（ａ）に示す様に、ワイヤー１２がキャピラリ
ー１３の穴に通され、 ■第６図（ｂ）に示す様に、ワイヤー先端を加熱溶融す
ることで球状１４にし、 ■第６図（ｃ）に示す様にパッド６上に移動したキャピ
ラリーにてボールをパッド６に加圧して接合する、 ■第６図（ｄ）に示す様に次にキャピラリーはワイヤー
を送り出しつつリード１５上に移動し、■第６図（ｅ）
に示す様にリード表面にワイヤーを加圧して接合しつつ
、ワイヤーを切断する。■ As shown in Fig. 6(a), the wire 12 is passed through the hole of the capillary 13, ■ As shown in Fig. 6(b), the tip of the wire is heated and melted to make it into a spherical shape 14; As shown in Figure 6(c), the capillary moved onto the pad 6 applies pressure to the ball to bond it to the pad 6. As shown in Figure 6(d), the capillary then feeds out the wire and presses the ball onto the lead 15. Move to ■Figure 6 (e)
As shown in the figure, the wire is cut while applying pressure to the lead surface to join it.

−船釣に、各パッドと各対応するリードとの間で上記■
〜■の動作が順次繰り返し行われることによって半導体
装置のワイヤーボンディングが完了する。なお本方法に
おける加圧接合時は単にキャピラリーによる加圧だけで
なく、超音波エネルギー及び熱エネルギーが併用される
。- For boat fishing, the above ■ between each pad and each corresponding reed
Wire bonding of the semiconductor device is completed by sequentially and repeatedly performing the operations from to (2). Note that during pressure bonding in this method, not only pressure using a capillary is used, but also ultrasonic energy and thermal energy are used in combination.

この時に用いられるキャピラリーの形状は第７図（ａ）
で示す通りの円筒形であり、このキャピラリーを使って
圧着した時の状態を第７図（ｂ）に示す。圧着ボール５
はキャピラリー１３のボール圧着部１６により外周部が
円状に形成される。The shape of the capillary used at this time is shown in Figure 7(a).
The capillary has a cylindrical shape as shown in FIG. 7(b) when it is crimped using this capillary. Crimp ball 5
The outer periphery of the capillary 13 is formed into a circular shape by the ball crimping portion 16 of the capillary 13.

又加圧時に超音波エネルギーを付加した場合は第７図（
ｃ）に示す様にボール圧着部１６は超音波振動方向に対
ししゅう動１７するので外周部１８は振動方向に対しや
や細長く花びら状になったりする。In addition, if ultrasonic energy is added during pressurization, Figure 7 (
As shown in c), since the ball crimping portion 16 slides 17 in the direction of ultrasonic vibration, the outer circumferential portion 18 becomes slightly elongated and petal-shaped in the direction of vibration.

ボールボンディングは、安定した品質を得られ、かつ各
ボンディングが高速に行なわれる事がら半導体装置製造
に最も多く用いられている方法である。Ball bonding is the most commonly used method for manufacturing semiconductor devices because it provides stable quality and allows each bonding to be performed at high speed.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

最近、ＩＣは高機能化の要求により１チツプあたりに設
けられるパッド数が増える傾向にあり、ＩＣの小型化の
要求とあいまって各パッド間の距離（以下パッドピッチ
）が小さくなる傾向にある。Recently, the number of pads provided per chip has tended to increase due to the demand for higher functionality in ICs, and the distance between each pad (hereinafter referred to as pad pitch) has tended to become smaller due to the demand for smaller ICs.

この為には、パッドに加圧接合する際に形成される圧着
ボール径を小さくする事が有効であるが、小さくしすぎ
ると圧着強度の低下が生じ、圧着強度を保ったままいか
にパッドピッチ方向に小さくするかが課題となる。そこ
で本発明はこの様な課題を解決しようとするもので、そ
の目的とするところは、半導体装置の小型化が実現でき
る半導体装置の製造方法を提供するところにある。For this purpose, it is effective to reduce the diameter of the crimp ball that is formed when pressure bonding to the pad, but if it is made too small, the crimp strength will decrease, and it is difficult to determine how to move the pad pitch direction while maintaining the crimp strength. The challenge is how to make it as small as possible. SUMMARY OF THE INVENTION The present invention aims to solve these problems, and its purpose is to provide a method of manufacturing a semiconductor device that can realize miniaturization of the semiconductor device.

〔課題を解決するための手段〕[Means to solve the problem]

本発明の半導体装置の製造方法は、ボールボンディング
方式を用いたワイヤーボンディングにおいて、ボールボ
ンドの形状をすべての辺においてパッドが配置されてい
るＩＣの辺に対し垂直方向に伸びた楕円形状にする事を
特徴とする。The method for manufacturing a semiconductor device of the present invention is characterized in that, in wire bonding using a ball bonding method, the shape of the ball bond is an ellipse that extends perpendicularly to the side of the IC on which the pad is arranged on all sides. It is characterized by

〔実施例〕〔Example〕

第１図（ａ）は本発明に用いられる圧着ボール形状の実
施例の平面図を示しており、パッド１と接合された圧着
ボール２の形状はＩＣ３の辺４に対して垂直方向に伸び
た楕円形となっている。第１図（ｂ）は上記実施例の側
面図を示し、第１図（ｃ）は同じく正面図を示す。本発
明による圧着ボールと従来の技術による圧着ボールの形
状比較を第２図に示す。本発明による圧着ボール２に必
要なパッド１の大きさと、従来の圧着ボール５に必要な
パッド６の大きさは大きく違い特にボンディング時に印
加される超音波エネルギーの振動方向ではない方向に対
してパッド寸法の違いが顕著になる。このことは、パッ
ドを多数並べる必要のある多ビンのプラスチックパッケ
ージにおいてＩＣサイズを決定する上で大きな要素とな
る。第３図（ａ）は本発明に用いられるキャピラリーの
ボール圧着部７側から見た斜視図である。従来は円形で
あるボール圧着部７の両サイドにカット８を入れ、カッ
ト部で圧着ボールをパッドに押しつける面積を減少させ
る事で本発明の製造方法が可能となる。第３図（ｂ）は
第３図（ａ）のキャピラリーを用いた時の圧着ボール２
の状態図である。FIG. 1(a) shows a plan view of an embodiment of the crimp ball shape used in the present invention, and the shape of the crimp ball 2 bonded to the pad 1 extends perpendicularly to the side 4 of the IC 3. It is oval shaped. FIG. 1(b) shows a side view of the above embodiment, and FIG. 1(c) similarly shows a front view. FIG. 2 shows a comparison of the shapes of the crimped ball according to the present invention and the crimped ball according to the prior art. There is a big difference between the size of the pad 1 required for the crimp ball 2 according to the present invention and the size of the pad 6 required for the conventional crimp ball 5. Especially, the pad 1 is different from the size of the pad 6 required for the conventional crimp ball 5. The difference in dimensions becomes noticeable. This becomes a major factor in determining the IC size in a multi-bin plastic package that requires a large number of pads to be lined up. FIG. 3(a) is a perspective view of the capillary used in the present invention, viewed from the ball crimping portion 7 side. The manufacturing method of the present invention is made possible by making cuts 8 on both sides of the conventionally circular ball crimping portion 7 and reducing the area where the crimped ball is pressed against the pad at the cut portions. Figure 3(b) shows the crimped ball 2 when using the capillary in Figure 3(a).
FIG.

加圧時に超音波エネルギーを付加した場合、キャピラリ
ーのボール圧着部７は超音波振動方向に対してしゆう動
９し圧着ボール２は楕円形となる。When ultrasonic energy is applied during pressurization, the ball crimping portion 7 of the capillary moves 9 in the direction of ultrasonic vibration, and the crimping ball 2 becomes elliptical.

第４図は本発明の実施例でＩＣ３に配置されたパッド２
に近い辺４に対して圧着ボール２は垂直方向に伸びた楕
円形状をしている。第５図は本発明の製造方法に用いら
れるワイヤーボンダーの実施例で、すべての辺に対して
垂直方向に伸びた楕円形の圧着ボールを作る為２つのボ
ンディングヘッドを持つ。ボンディングヘッド１０は第
５図中Ｘ方向に対してのみ超音波振動が作用し、又ボン
ディングヘッド１１は第５図中Ｘ方向のみ作用する。FIG. 4 shows pad 2 arranged on IC 3 in an embodiment of the present invention.
The press-bonded ball 2 has an elliptical shape extending in a direction perpendicular to the side 4 near the side 4. FIG. 5 shows an embodiment of the wire bonder used in the manufacturing method of the present invention, which has two bonding heads to make an elliptical crimped ball extending perpendicularly to all sides. Ultrasonic vibration acts on the bonding head 10 only in the X direction in FIG. 5, and on the bonding head 11 only in the X direction in FIG.

したがって各ボンディングヘッドで２辺ずつボンディン
グする事で本発明の製造方法に用いる事が出来る。Therefore, the manufacturing method of the present invention can be used by bonding two sides with each bonding head.

〔発明の効果〕〔Effect of the invention〕

以上の説明から明らかな様に、本発明はワイヤーボンデ
ィングにおいて圧着ボールを従来の形状と比較して小さ
く出来る半導体装置の製造方法を提供することにより、
パッドピッチが小さく出来、半導体チップの小型化が可
能となる。As is clear from the above description, the present invention provides a method for manufacturing a semiconductor device in which the shape of a crimped ball in wire bonding can be made smaller compared to the conventional shape.
The pad pitch can be reduced, making it possible to downsize the semiconductor chip.

【図面の簡単な説明】[Brief explanation of drawings]

第１図（ａ）は本発明に用いられる圧着ボール形状の実
施例の平面図で、第１図（ｂ）は同じく側面図、第１８
図（ｃ）は同じく正面図である。第２図は本発明による
圧着ボールと従来の技術による圧着ボールの形状比較図
である。第３図（ａ）は本発明に用いられるキャピラリ
ーの斜視図で、第３図（ｂ）は上記キャピラリーを用い
た時の圧着ボールの状態図である。第４図は本発明の実
施例で各辺に対して圧着ボールの形状を表わす図。 第５図は本発明に用いられるワイヤーボンダーの実施例
を示す図である。第６図はワイヤーボンディングの順序
を表わしたもので、第６図（ａ）はキャピラリーにワイ
ヤーを通した様子を示す断面図、第６図（ｂ）〜（ｅ）
はボール形成からワイヤーを切断する迄の様子を示す側
面図である。第７図（ａ）は従来のキャピラリーの斜視
図、第７図（ｂ）は従来のキャピラリーを用いて圧着し
た時の状態を示ず断面図、第７図（ｃ）は従来のキャピ
ラリーを用いた時の圧着ボールの状態図である。 １・・・パッド ２・・・圧着ボール ３・・・ＩＣ ４・・・ＩＣの辺 ５・・・圧着ボール ６・・・パッド ７・・・ボール圧着部 ８・・・カット ９・・・しゆう動したキャピラリー １０・・・ボンディングヘッド １１・・・ボンディングヘッド １２・・・ワイヤー １３・・・キャピラリー １４・・・球 １５・・・リード １６・・・ボール圧着部 １７・・・しゅう動したキャピラリー １８・・・外周部 以　　上FIG. 1(a) is a plan view of an embodiment of the crimped ball shape used in the present invention, and FIG. 1(b) is a side view of the same, and FIG.
Figure (c) is also a front view. FIG. 2 is a shape comparison diagram of a crimped ball according to the present invention and a crimped ball according to the prior art. FIG. 3(a) is a perspective view of a capillary used in the present invention, and FIG. 3(b) is a state diagram of a crimped ball when the above-mentioned capillary is used. FIG. 4 is a diagram showing the shape of a press-bonded ball for each side in an embodiment of the present invention. FIG. 5 is a diagram showing an embodiment of the wire bonder used in the present invention. Figure 6 shows the order of wire bonding, Figure 6 (a) is a sectional view showing how the wire is passed through the capillary, Figure 6 (b) to (e)
FIG. 3 is a side view showing the process from forming the ball to cutting the wire. FIG. 7(a) is a perspective view of a conventional capillary, FIG. 7(b) is a cross-sectional view of the conventional capillary without showing the state when crimped, and FIG. 7(c) is a perspective view of a conventional capillary. FIG. 3 is a state diagram of the crimped ball when 1... Pad 2... Crimp ball 3... IC 4... Side of IC 5... Crimp ball 6... Pad 7... Ball crimping part 8... Cut 9... Sliding capillary 10...bonding head 11...bonding head 12...wire 13...capillary 14...ball 15...lead 16...ball crimping part 17...sliding capillary 18...more than the outer periphery

Claims (1)

【特許請求の範囲】[Claims] 　半導体素子の電極とリードフレーム等基板の端子をボ
ールボンディング方式を用いて金属細線で接続するワイ
ヤーボンディングが行なわれる半導体装置において、前
記ボールボンドの形状をすべての辺において前記電極が
配置されている前記半導体素子の辺に対し垂直方向に伸
びた楕円形状とする事を特徴とした半導体装置の製造方
法。In a semiconductor device in which wire bonding is performed in which electrodes of a semiconductor element and terminals of a substrate such as a lead frame are connected by a thin metal wire using a ball bonding method, the shape of the ball bond is such that the electrode is arranged on all sides. A method for manufacturing a semiconductor device characterized by forming an elliptical shape extending perpendicularly to the sides of a semiconductor element.
JP2133220A 1990-05-23 1990-05-23 Manufacture of semiconductor device Pending JPH0428241A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2133220A JPH0428241A (en) 1990-05-23 1990-05-23 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2133220A JPH0428241A (en) 1990-05-23 1990-05-23 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPH0428241A true JPH0428241A (en) 1992-01-30

Family

ID=15099542

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2133220A Pending JPH0428241A (en) 1990-05-23 1990-05-23 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPH0428241A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5544804A (en) * 1994-06-08 1996-08-13 Texas Instruments Incorporated Capillary designs and process for fine pitch ball bonding
KR100210711B1 (en) * 1996-10-01 1999-07-15 윤종용 A semicondutor chip
US5979743A (en) * 1994-06-08 1999-11-09 Texas Instruments Incorporated Method for making an IC device using a single-headed bonder
WO2006090196A1 (en) * 2005-02-23 2006-08-31 Infineon Technologies Ag Rectangular bond pad and method of wire bonding the same with an elongated ball bond

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5544804A (en) * 1994-06-08 1996-08-13 Texas Instruments Incorporated Capillary designs and process for fine pitch ball bonding
US5979743A (en) * 1994-06-08 1999-11-09 Texas Instruments Incorporated Method for making an IC device using a single-headed bonder
KR100210711B1 (en) * 1996-10-01 1999-07-15 윤종용 A semicondutor chip
WO2006090196A1 (en) * 2005-02-23 2006-08-31 Infineon Technologies Ag Rectangular bond pad and method of wire bonding the same with an elongated ball bond

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