JPH0428097B2 - - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a mask defect inspection/correction method and apparatus, and is particularly suitable for inspecting/correcting black spot defects that occur on masks with fine patterns of 1.5μ or less. METHODS AND APPARATUS.

In recent years, semiconductor integrated circuits (ICs) have become significantly smaller and more highly integrated, and the wiring pattern dimensions are moving from 3μ to 2μ, and it is predicted that 1 to 1.5μ patterns will be realized in a few years. .

FIG. 1a shows a cross section of the photomask.

The photomask shown in this figure consists of a thin film (with a thickness of several hundred to A desired pattern 2 is formed by photo-etching. Here, dimension A is the interval between patterns, and dimension B is the width of the patterns.

FIG. 1b shows a cross section of an X-ray exposure mask used for forming even finer wiring patterns.

The mask shown in this figure is supported by a Si supporting substrate 3 and is placed on a parylene 4 with a thickness of several microns and has a thickness of 200 Å.
A pattern is formed on the Cr thin film 5 of approximately 1000 Å in thickness, with a thickness of several 1000 Å made of Au6, which has a high absorption of X-rays. The thickness at the top of Au6 is approx.
The 1000 Å thick Cr7 was formed by a lift-off method to serve as a mask when etching the Au6 to form a pattern.

FIG. 2 is a top view of a portion of these masks.

In the mask shown in this figure, a wiring pattern 9 is formed on a glass substrate 8, and this wiring pattern 9 is formed of, for example, a thin film of metal Cr. Such a mask has the symbol 10,1
Defects indicated by 1 and 12 usually occur during the pattern forming process. This is mainly due to the presence of foreign matter in the photoetching process. Symbols 10 and 11 are called black spot defects, and metal Cr exists in places where it should not originally exist. Reference numeral 12 is called a white spot defect, in which metal Cr is missing where it should originally exist. If a photomask with such defects is used as is, these defects will be directly transferred to the element patterns on the wafer, resulting in defective ICs. Among the two types of defects, black spot defects are more numerous.

FIG. 3 shows a conventional example of the mask defect inspection apparatus as described above, and FIG. 4 shows the function of the binarization circuit of the apparatus.

In the apparatus shown in FIG. 3, the mask 13 to be inspected is fixed on an XY table 14. The light emitted from the light source 15 is transmitted through the optical fiber 1
6 to illuminate the mask 13 from below. Under this transmitted light illumination, the objective lens 17 transfers the image of the mask pattern to the optical elements 18, 19, 20.
The image is then formed onto a linear image sensor 21 in which minute photoelectric conversion elements are arranged in a row.

The output of this linear image sensor 21 is input to a binarization circuit 23 and binarized. That is, the output of the linear image sensor 21 as shown in Fig. 4a is converted into a digital signal consisting of 0 level and 1 level as shown in Fig. 4b, depending on whether it is higher or lower than an arbitrarily set output level h. Replace. This is because the electrical output from the linear image sensor 21 that captures the mask pattern image is affected by optical, electrical, and other factors.
This is to improve the deterioration of the S/N ratio.

The XY table 14 is moved perpendicular to the direction in which the linear image sensors 21 are arranged by a drive motor controlled by a control device. Therefore, the output from the binarization circuit 23 scans the image of the mask pattern two-dimensionally.

On the other hand, accurate original pattern information stored on the magnetic tape 24 is temporarily stored on a magnetic disk 25 that can be read at high speed. XY table 14
The position of is read every moment by linear encoders 26 and 27, and a comparison circuit 28 compares the original pattern information from the magnetic disk 25 at the corresponding location with the output of the binarization circuit.

In this way, a pattern different from the original pattern, that is, the defect position is changed to the defect location wiring circuit 2.
9 is recorded on the cassette tape 30.

FIG. 5 shows a conventional example of a device for correcting mask defects found as described above using a laser.

In this device, a laser beam 32 emitted from a laser oscillator 31 is reflected by a reflection mirror 33,
After passing through the semi-transparent mirror 34 through the aperture (rectangular opening) 47, the light is focused by the lens 35,
The defect 38 of the mask 37 placed on the fine movement stage 36 is irradiated and removed.

Under modification, half mirror 39, lighting lamp 40,
An illumination optical system consisting of a concave mirror 41 and a condenser lens 42 illuminates the surface of the mask 37, which is a sample.

Here, regarding the positioning of the defect, the defect position is determined by the drive control device 46 of the stage 36 based on the information from the cassette tape 45 on which the defect position information is recorded by the defect inspection device shown in FIG. so as to enter the field of view of the eyepieces 43 and 44,
After the stage 36 on which the mask is placed moves, the stage 36 is moved slightly while being observed.

The conventional techniques related to mask defect inspection and correction described above have the following drawbacks. In other words, (1) Since defect inspection is performed using an optical method, it is impossible to obtain a resolution below the diffraction limit of light, and the practical resolution is approximately 0.5μ.
is considered to be the limit. Therefore, VLSI
It is not possible to inspect defects smaller than 0.5μ in fine patterns such as

(2) Since defect removal and correction is performed using a laser device, it is difficult to perform removal and correction with an accuracy below the focusing limit of the laser beam. Practical removal correction accuracy is considered to be at the limit of 0.5μ, so 1.5μ
It is not suitable for modifying the following VLSI fine patterns.

(3) Since defect inspection and correction are performed using separate equipment, the equipment becomes expensive and the number of man-hours increases. In particular, since position detection and positioning are repeated, the mechanism and process of this part are redundant, which is wasteful.

The purpose of the present invention is to significantly improve work efficiency and improve resolution and accuracy of 0.5 μm or less in inspecting and correcting defects on masks on which circuit patterns are formed, in order to solve the problems of the prior art as described above. Another object of the present invention is to provide a mask defect inspection/correction method that can reliably carry out the mask defect inspection/correction method using the same device. It is on offer.

That is, in order to achieve the above object, the present invention charges a high-intensity ion beam from a high-intensity ion source such as a liquid metal ion source onto a mask placed on a stage and on which a circuit pattern is formed. A particle optical system focuses the particles on a fine spot of 0.5 μm or less, and a deflection electrode scans and irradiates at least a wide scanning area. Secondary charged particles generated from the surface of the mask are detected by a secondary charged particle detector. An enlarged secondary charged particle image of the surface of the mask according to the intensity of the secondary charged particles is obtained and stored in a memory, and the original image is then a defect position detection step of detecting the defect position of the circuit pattern on the mask by comparing the original pattern information read from the pattern information storage means and the enlarged secondary charged particle image read from the memory; A high-brightness ion beam from a high-brightness ion source such as the liquid metal ion source is focused into a fine spot of 0.5 μm or less by a charged particle optical system at the defect position on the mask detected in the defect position detection step. This method of inspecting and repairing defects in a mask is characterized by comprising a defect repair step of repairing defects by scanning and irradiating in a narrow scanning area limited by a deflection electrode. Furthermore, in order to achieve another object, the present invention provides that the vacuum container includes at least a stage on which a mask is placed, a high-intensity ion source such as a liquid metal ion source, and the high-intensity ion source. an extraction electrode for extracting a high-intensity ion beam from the extraction electrode; an electrostatic lens for focusing the high-intensity ion beam extracted from the extraction electrode onto a fine spot of 0.5 μm or less on the mask; an aperture; A blanking electrode for removing the high-intensity ion beam focused by the electrostatic lens on the outside of the aperture, a deflection electrode for scanning the fine ion beam spot of 0.5 μm or less on the mask, and a deflection electrode for scanning the fine ion beam spot of 0.5 μm or less on the mask. A secondary charged particle detector for detecting secondary charged particles generated from the surface of the mask irradiated with the fine ion beam spot described below is installed, and a control device for controlling the position of the above-mentioned document table; A high-intensity ion beam from a high-intensity ion source such as a liquid metal ion source is focused into a fine spot of 0.5 μm or less using a charged particle optical system, and is irradiated by scanning at least a wide scanning area using a deflection electrode.
an enlarged secondary charged particle image forming means for forming an enlarged secondary charged particle image of the surface of the mask according to the intensity of the secondary charged particles detected by the secondary charged particle detector and storing it in a memory; and information on the original pattern. original pattern information storage means for storing information on the original pattern read from the original pattern information storage means based on mask position information from the control device and read from the memory of the enlarged secondary charged particle image forming means; a defect position detection means for detecting the defect position of the circuit pattern on the mask by comparing the enlarged secondary charged particle image; A high-brightness ion beam from a high-brightness ion source, such as a high-brightness ion source, is focused into a fine spot of 0.5 μm or less using a charged particle optical system, and scanned in a narrow, limited scanning area by controlling the deflection electrode and blanking electrode. This is a mask defect inspection/correction apparatus characterized by comprising a defect correction control means for correcting defects by irradiating the mask with the mask.

Hereinafter, the present invention will be explained based on the drawings.

FIG. 6 shows an example of a mask defect inspection/correction apparatus for carrying out the method of the present invention.

In FIG. 6, the pedestal 47 is provided with anti-seismic measures using an air servo 48, and a vacuum container 49 is installed on the pedestal 47.

A sample chamber 50 is provided in the lower half of the vacuum container 49, and a sample exchange chamber 51 is provided on the side thereof. The upper half of the vacuum container 49 and the sample chamber 50 are partitioned off by a gate valve 52, and the sample chamber 50 and the sample exchange chamber 51 are partitioned off by another gate valve 53. Further, the vacuum container 49 is connected to a vacuum evacuation means.

The evacuation means includes vacuum pipes 54, 55, 56 connected to the upper half of the vacuum container 49, the sample chamber 50, and the sample exchange chamber 51, an oil rotary pump 57, an oil trap 58, and an ion pump 5.
9, turbo molecular pump 60 and valves 61, 6
2, 63, and 64, so that the inside of the vacuum container 49, the sample chamber 50, and the sample exchange chamber 51 can be evacuated to a vacuum of 10 ^-5 torr or less.

In the sample chamber 50 on the pedestal 47, there is a stage 65.
is installed, a sample stand 70 is placed on the stage 65, and a sample 74 serving as a mask is placed on top of the sample stand 70. Further, the sample stage 70 is provided with a drawer 70'.

The document stand 65 has rotation introduction terminals 71, 72,
73 from the outside of the sample chamber 50 by an X-direction drive motor 66, a Y-direction drive motor 67, a Z-direction fine movement micrometer 68, and a θ-direction (rotation) movement ring 69. It is configured to allow fine adjustment of the rotation angle within. the X and Y drive motors 66, 67;
The Z-direction fine movement micrometer 68 and the θ-direction moving ring 69 are connected to and controlled by the control device 103.

Inside the vacuum container 49, a liquid metal ion source 75, which is a high-brightness ion source, a control (bias) electrode 76, and an extraction electrode 77 for an ion beam 78 are arranged in order from above toward the stage 65. , an aperture (circular opening) 79 and an aperture with a micrometer (rectangular opening) 106
, electrostatic lenses 80, 81, 82, blanking electrode 83, aperture 79', deflection electrodes 84, 85 in the X and Y directions, and secondary charged particle detector 9.
5 is provided.

The filament of the liquid metal ion source 75 is
It is connected to a power source 86 and heated by the power source 86 .

The control electrode 76 is connected to a power source 87 and controls the current by applying low positive and negative voltages near the tip of the chip provided in the filament of the liquid metal ion source 75.

The extraction electrode 77 is connected to a power source 88, and after heating the filament of the liquid metal ion source 75 by passing a current through it, the extraction electrode 77 is heated with several KV by the power source 88 in a vacuum of 10 ^-5 torr or less.
When a negative voltage of up to several tens of kilovolts is applied, an ion beam 78 is extracted from the tip of the chip provided on the filament.

The aperture 79 extracts the central portion of the extracted ion beam 78.

The electrostatic lenses 80 and 81 are powered by power sources 89 and 90.
The ion beam 7 extracted by the aperture 79 is
8 into a minute area of 0.5μφ or less.

The blanking electrode 83 is connected to a power source 92 and scans the ion beam 78 at a very high speed to remove the ion beam 78 to the outside of the aperture 79'.
The ion beam irradiation is stopped at high speed.

The deflection electrodes 84 and 85 are connected to a power source 93 and deflect the ion beam 78 focused by the electrostatic lenses 80, 81, and 82 in the X and Y directions.
A spot 78' is connected to the surface of 4.

The secondary charged particle detector 95 is arranged in the sample chamber 50 and receives secondary electrons or secondary ions, which are secondary charged particles, generated from the sample 74 when the sample 74 is irradiated with the ion beam 78, The intensity is converted into electric current, and the output is converted into SIM observation device 9.
6 is scheduled to be sent.

A power source 86 for the filament of the liquid metal ion source 75, a power source 87 for the control electrode, a power source 88 for the extraction electrode, and a power source 8 for the electrostatic lens.
9 and 90 are connected to a high voltage power source 91 of several tens of kilovolts. Further, the power supply 92 for the blanking electrode and the power supply 93 for the deflection electrode are connected to a control device 94.
The ion beam 78 is connected to the ion beam 78 to scan the ion beam 78 according to a certain pattern.

The power source 93 for the deflection electrode and the secondary charged particle detector 95 are connected to a SIM observation device 96. This SIM observation device 96 receives a signal regarding the amount of deflection of the ion beam 78 in the X and Y directions from a power source 93 for the deflection electrode, scans a bright spot on a cathode ray tube 97 in synchronization with the signal, and scans the bright spot of the cathode ray tube 97. By changing the brightness and the current intensity from the secondary charged particle detector 95, an image of the sample corresponding to the secondary electron emission ability at each point of the sample 74 is obtained.
It is configured to enable magnified observation of the sample surface using the SIM (Scanning Ion Microscope) function, and the information is transmitted to the sample 74.
It is designed to be sent to the inspection equipment of

The inspection device for the sample 74 is a memory scope 9.
8, a comparison circuit 99, and a magnetic disk 100. The memory scope 98 is a SIM observation device 9 based on the signal from the secondary charged particle detector 95.
6 images are recorded together. The magnetic disk 1
00 stores original pattern information through the magnetic tape 101. Based on the image position information from the control device 103 of the stage 65, the comparison circuit 99 extracts the image of the pattern of the sample 74 at the position corresponding to the information from the memory scope 98, and extracts the information of the original pattern. magnetic disk 1
00 and compare both patterns, and when the two patterns do not match, it is determined that there is a defect.

A control system 102 is connected to the testing device for the sample 74, and the high voltage power supply 91 and the control device 94 are connected to the control system 102. The control system 102 switches the power supply connected to the high-voltage power supply 91 and the control device 94 to the ion beam extraction conditions of low current, low accelerating voltage, and wide scanning range during observation and defect inspection of the sample 74. After detecting a pattern defect, when removing or correcting the defect, the ion extraction conditions can be switched to large current, high acceleration voltage, and narrow scanning area.

In addition, 104 and 105 in Fig. 6 are the third
This corresponds to the linear encoders 26 and 27 in the figure.

Next, the method of the present invention will be explained in relation to the operation of the mask defect inspection/correction apparatus of the above embodiment.

Before introducing the sample 74 into the sample chamber 50, the entire vacuum container 49 is evacuated by the vacuum evacuation means.

Next, the drawer 7 attached to the sample stage 70
0' to the sample exchange chamber 51, close the gate valve 53, and close the sample exchange chamber 51.
Open the door and place the sample 7, which is a mask, on the sample stage 70.
4, pre-evacuate the sample exchange chamber 51, place the sample in the sample chamber 50, place the sample table 70 at a fixed position on the stage 65, and control the
The direction drive motors 66 and 67 are operated to move the stage 6.
5 to the inspection start position of sample 74,
Further, the Z direction fine movement micrometer 68 and the θ direction moving ring 69 are operated to finely adjust the rotation angle with respect to the Z direction and the horizontal plane.

Next, the control system 102 switches the high voltage electrode 91 and the control device 94, and each electrode 86 to 90, 9
After setting the ion beam extraction conditions of small current, low accelerating voltage, and wide scanning range on the sample 74 for observation and defect inspection of the sample 74,
observation and defect inspection.

Then, the liquid metal ion source 75 is powered by the power source 86.
A current is supplied to the filament of the
When a negative voltage of several KV to several tens of KV is applied to the extraction electrode 77 by the power supply 88 in a vacuum of 10 ^-5 torr or less, an extremely narrow area at the tip of the chip provided on the filament of the liquid metal ion source 75 is applied. An ion beam 78 is extracted from. When extracting the ion beam 78, the control electrode 76 is connected to the liquid metal ion source 7 through the power supply 87.
Apply low positive and negative voltages to the tip of the filament No. 5 to control the current.

The ion beam 78 extracted from the liquid metal ion source 75 has only its central portion taken out by an aperture 79, and is further connected to power sources 89 and 90.
Electrostatic lenses 80, 81 to which a voltage is applied
and another electrostatic lens 82 to form a spot 78' of 0.5 μφ or less, and is deflected in the X and Y directions by deflection electrodes 84 and 85 activated by voltage applied from a power source 93. A spot 78' is formed on the surface, and the surface of the sample 74 is irradiated with an ion beam 78.

As described above, when the surface of the sample 74 is irradiated with the ion beam 78, secondary charged particles are generated from the sample 74. These secondary charged particles, such as secondary electrons or secondary ions, are received by the secondary charged particle detector 95, and their intensity is converted into an electric current and the SIM
It is sent to the observation device 96.

The SIM observation device 96 also includes a power source 9 for the deflection electrode.
3 receives a signal regarding the amount of deflection of the ion beam 78 in the X and Y directions, and in synchronization with this signal, the bright spot of the cathode ray tube 97 is scanned, and the brightness of the bright spot is determined by the current intensity from the secondary charged particle detector 95. By changing the angle according to the angle, an image of the sample 74 is obtained at each point, and the sample surface is observed under magnification.

Next, the sample 74 obtained with the SIM observation device 96
The image is recorded in the memory scope 98 of the inspection device for the sample 74.

Next, in the comparison circuit 99 of the inspection device for the sample 74, the image of the sample 74 is taken out from the memory scope 98, and the control device 103 of the drive system of the stage 65
Based on the image position information from the magnetic disk 10
The information on the pattern at the position corresponding to the image of the sample 74 is extracted from the information on the original pattern stored in 0, the image of the sample 74 and the information on the original pattern are compared, and if the two do not match, it is determined to be a defect. It is determined that there is.

In this way, by using the secondary electron image or the secondary ion image obtained by scanning the ion beam 78 with a diameter of 0.5μ or less, it is possible to inspect defects in patterns of 0.5μ or less.

After observing and inspecting the sample 74, the blanking electrode 83 is activated, the ion beam 78 is scanned at an extremely high speed, and the ion beam 78 is removed outside the aperture 79', and the irradiation of the ion beam 78 onto the sample 74 is stopped at high speed.

When a defect is detected in the pattern of the sample 74 by the comparison circuit 99 of the inspection device for the sample 74,
The control system 102 is switched to the conditions for extracting the ion beam 78 of large current, high accelerating voltage, and narrow scanning area suitable for correction, the large current ion beam 78 is extracted from the liquid metal ion source 75, and the high accelerating voltage is applied by the control electrode 76. give, electrostatic lens 8
0,81,82 to focus the ion beam 78 on a spot of 0.5μφ or less and deflection electrodes 84,85.
The scanning range is limited, the ion beam 78 is irradiated to the defect position of the pattern, and the defect is corrected by sputtering removal. Alternatively, the ion beam 78 may be imaged and projected onto the defect position to remove the defect by sputtering.

In this way, by performing correction using a micro ion beam, it is possible to remove and repair even minute defects of 0.5μ or less.

After correcting the pattern defects of the sample 74,
It is also possible to switch the control system again to values suitable for observing and inspecting the sample 74, repeating the above-described operations, and inspecting the corrected sample 74.

After completely correcting the defect in the pattern of the sample 74, each power supply is stopped, the gate valve 52 between the upper half of the vacuum container 49 and the sample chamber 50 is closed, the other gate valve 53 is opened, and the pull-out tool is closed. The sample stage 74 is pulled out to the sample exchange chamber 51 via 70', and the mask, which is the corrected product, is taken out.

Note that in the present invention, a dividing resistor may be used instead of the high voltage power supply 91.

In addition, a binary circuit is connected to the secondary charged particle detector 95, and the signal is converted into a binary signal of 0 level and 1 level depending on whether it is higher or lower than the reference level, and then sent to the SIM observation device. You may also do so.

As explained above, according to the present invention, by using a high-intensity ion beam, defects on a mask on which a circuit pattern is formed can be inspected and corrected with significantly improved work efficiency and a resolution of 0.5 μm or less. It produces effects that can be achieved with precision.

[Brief explanation of drawings]

Figures 1a and b are cross-sectional views showing one side of the mask that is symmetrical in the present invention, Figure 2 is a plan view of the same, Figure 3 is a diagram showing a conventional example of a mask defect inspection device, and Figure 4. a and b are functional explanatory diagrams of the binarization circuit in the inspection device, FIG. 5 is a diagram showing a conventional example of a mask defect device, and FIG. 6 is a system diagram showing an example of a device implementing the method of the present invention. It is. 10, 11, 12... Defect in wiring pattern of mask, 47... Frame, 49... Vacuum container, 50...
...Sample room, 51...Sample exchange room, 54-64...
Members constituting the vacuum evacuation means, 65... stage,
66, 67...X, Y direction drive motor, 68...
Z direction fine movement micrometer, 69...θ direction moving ring, 70... Sample stage, 71-73... Rotation introduction terminal, 74... Sample which is a mask, 75... Liquid metal ion source which is a high brightness ion source , 76...
Control electrode, 77...Ion beam extraction electrode, 78...Ion beam, 78'...Ion beam spot, 79, 79'...Aperture, 80-83...Electrostatic lens, 84...Blanking electrode , 84, 85...deflection electrode, 86-
90... Power supply, 91... High voltage power supply, 92, 93...
...Power source, 94...Control device for power supply of blanking electrode and deflection electrode, 95...Secondary charged particle detector, 96...SIM observation device, 98...Memory scope, 99...Image of sample pattern and Comparison circuit with information on the original pattern, 100...Magnetic disk for storing information on the original pattern, 102...Observation/
A control system that switches the operating conditions of the power supply depending on when a defect is corrected during inspection, 103... A control device for the drive system of the stage.

Claims (1)

[Scope of Claims] 1. A high-intensity ion beam from a high-intensity ion source such as a liquid metal ion source is irradiated onto a mask placed on a stage and formed with a circuit pattern by a charged particle optical system to a diameter of 0.5 μm. The secondary charged particles generated from the surface of the mask are detected by the secondary charged particle detector, and the secondary charged particles are detected by the secondary charged particle detector. Obtain an enlarged secondary charged particle image of the surface of the mask according to the intensity of the image, store it in a memory, and read it from the original pattern information storage means based on mask position information from a control device that controls the position of the document stage. A defect position detection step of detecting the defect position of the circuit pattern on the mask by comparing the information of the original pattern read out from the memory with the enlarged secondary charged particle image read out from the memory; A high-brightness ion beam from a high-brightness ion source such as the liquid metal ion source described above is focused onto a fine spot of 0.5 μm or less using a charged particle optical system, and is limited by a deflection electrode. 1. A method for inspecting and repairing defects in a mask, comprising a defect repair step of repairing defects by scanning and irradiating in a narrow scanning area. 2. Inside the vacuum container, there are at least a stage on which a mask is placed, a high-brightness ion source such as a liquid metal ion source, an extraction electrode for extracting a high-brightness ion beam from the high-brightness ion source, and a high-brightness ion source such as a liquid metal ion source. An electrostatic lens for focusing the high-intensity ion beam extracted from the extraction electrode into a fine spot of 0.5 μm or less on the mask, an aperture, and a high-intensity beam focused by the electrostatic lens outside the aperture. A blanking electrode for removing the ion beam,
a deflection electrode for scanning the fine ion beam spot of 0.5 μm or less on the mask;
A secondary charged particle detector for detecting secondary charged particles generated from the surface of the mask irradiated with a fine ion beam spot of 0.5 μm or less is installed, and a control device for controlling the position of the document table. , a high-intensity ion beam from a high-intensity ion source such as the liquid metal ion source described above is focused into a fine spot of 0.5 μm or less by a charged particle optical system, and is irradiated by scanning at least a wide scanning area with a deflection electrode; an enlarged secondary charged particle image forming means for forming an enlarged secondary charged particle image of the surface of the mask according to the intensity of the secondary charged particles detected by the secondary charged particle detector and storing the image in a memory; and an original pattern. an original pattern information storage means for storing information on the original pattern, information on the original pattern read from the original pattern information storage means based on the mask position information from the control device, and the enlargement 2;
a defect position detection means for detecting a defect position of a circuit pattern on a mask by comparing an enlarged secondary charged particle image read from a memory of a secondary charged particle image forming means; and a mask detected by the defect position detection means. A high-brightness ion beam from a high-brightness ion source such as the liquid metal ion source mentioned above is focused onto a fine spot of 0.5 μm or less using a charged particle optical system at the defect position above, and the deflection electrode and blanking electrode are controlled. 1. A mask defect inspection/correction apparatus comprising: defect correction control means for correcting defects by scanning and irradiating in a narrow scan area.