JPH04264731A - Formation of electrical connection contact and mounting board using it - Google Patents
Formation of electrical connection contact and mounting board using itInfo
- Publication number
- JPH04264731A JPH04264731A JP2444491A JP2444491A JPH04264731A JP H04264731 A JPH04264731 A JP H04264731A JP 2444491 A JP2444491 A JP 2444491A JP 2444491 A JP2444491 A JP 2444491A JP H04264731 A JPH04264731 A JP H04264731A
- Authority
- JP
- Japan
- Prior art keywords
- metal
- protruding
- melting point
- low melting
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000015572 biosynthetic process Effects 0.000 title description 2
- 239000002184 metal Substances 0.000 claims abstract description 47
- 229910052751 metal Inorganic materials 0.000 claims abstract description 47
- 238000002844 melting Methods 0.000 claims abstract description 26
- 239000000956 alloy Substances 0.000 claims abstract description 25
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 25
- 239000000463 material Substances 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims description 29
- 230000008018 melting Effects 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 21
- 239000010931 gold Substances 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 238000003825 pressing Methods 0.000 claims description 3
- 239000004615 ingredient Substances 0.000 abstract 1
- 239000011521 glass Substances 0.000 description 10
- 229910000679 solder Inorganic materials 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005496 eutectics Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 241000587161 Gomphocarpus Species 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/341—Surface mounted components
- H05K3/3431—Leadless components
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/3457—Solder materials or compositions; Methods of application thereof
- H05K3/3478—Applying solder preforms; Transferring prefabricated solder patterns
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
Description
【０００１】0001
【産業上の利用分野】本発明は、ＩＣチップに代表され
るチップ状の電子部品を基板上の端子電極群と接続する
ために、電気的接続接点を基板上の端子電極上のみに正
確に形成する電気的接続接点の形成法等に関するもので
ある。[Industrial Application Field] The present invention provides electrical connection contacts that are precisely placed only on the terminal electrodes on the substrate in order to connect chip-shaped electronic components such as IC chips to a group of terminal electrodes on the substrate. The present invention relates to a method of forming electrical connection contacts.
【０００２】0002
【従来の技術】従来、電子部品の接続端子と基板上の回
路パターン端子との接続には半田がよく利用されていた
が、近年、たとえばＩＣフラットパッケージ等の小型化
と、接続端子間、いわゆるピッチ間隔が次第に狭くなり
、従来の半田付け技術で対処することが次第に困難にな
ってきた。また、最近では電卓、電子時計あるいは液晶
ディスプレイなどにあっては、裸のＩＣチップをガラス
基板上の電極に直付けして実装面積の効率的利用を図ろ
うとする動きがあり、有効かつ微細な電気的接続手段が
強く望まれている。裸のＩＣチップを基板の電極と電気
的に接続する方法としては、メッキ技術によりＩＣチッ
プの電極パッド上に形成した突出接点（バンプ）を用い
たものが知られている。既知の突出接点の形成方法は、
最初にＩＣ基板上の電極パッド上に、クロム（Ｃｒ）、
銅（Ｃｕ）、金（Ａｕ）等の金属メッキ部を形成した後
、余分なレジストと金属蒸着膜を除去して、突出接点を
形成するというものである。[Prior Art] In the past, solder was often used to connect the connection terminals of electronic components and the circuit pattern terminals on the board, but in recent years, with the miniaturization of IC flat packages, etc. The pitch spacing has become progressively narrower, making it increasingly difficult to address with traditional soldering techniques. Furthermore, in recent years, there has been a movement toward efficient use of mounting area by directly attaching bare IC chips to electrodes on glass substrates in products such as calculators, electronic watches, and liquid crystal displays. Electrical connection means are highly desired. A known method for electrically connecting a bare IC chip to an electrode on a substrate is to use protruding contacts (bumps) formed on the electrode pads of the IC chip by plating technology. Known methods for forming protruding contacts include:
First, chromium (Cr) was placed on the electrode pad on the IC substrate.
After forming a metal plated portion of copper (Cu), gold (Au), etc., excess resist and metal vapor deposition film are removed to form protruding contacts.
【０００３】0003
【発明が解決しようとする課題】しかしながらかかる方
法においては、突出接点の形成方法はかなり複雑で、多
数の処理工程および高度のエッチング、メッキ技術が必
要であった。また、溶融した合金面に突出接点を浸積さ
せて低融点金属を転写することも可能であるが、転写量
の量的制御が不可能であった。However, in such a method, the method of forming the protruding contacts is quite complicated, requiring a large number of processing steps and sophisticated etching and plating techniques. It is also possible to transfer a low melting point metal by dipping a protruding contact into the molten alloy surface, but it has been impossible to quantitatively control the amount of transfer.
【０００４】本発明は上記問題点に鑑みてなされたもの
であり、その目的とするところは、微細かつ密に電子部
品の電極パッドと基板上の電極群とを信頼性よく直付け
するために、基板上の電極群、あるいは電子部品、たと
えばＩＣチップの電極パッド上に電気的接続接点を簡易
に、かつ、信頼性よく形成しようとすることにある。さ
らには前記電気的接続接点を用いて高密度な実装基板を
得ることにある。The present invention has been made in view of the above-mentioned problems, and its purpose is to provide a method for directly and reliably bonding electrode pads of electronic components and electrode groups on a substrate finely and densely. The object of the present invention is to easily and reliably form electrical connection contacts on a group of electrodes on a substrate or on electrode pads of an electronic component, such as an IC chip. Another object of the present invention is to obtain a high-density mounting board using the electrical connection contacts.
【０００５】[0005]
【課題を解決するための手段】本発明は上記問題点を解
決するため、微細ピッチ、微細端子電極が形成されてい
る基板の微細端子電極上への電気的接続接点の形成にお
いて、低融点合金または金属を主成分とする金属ペース
トを支持基材表面に設けられた凹部に充填する。前記支
持基材を加熱し前記凹部に充填された金属ペーストを溶
融し、微細端子電極群上に突出接点が形成された基板の
突出接点面を前記凹部中の溶融した低融点合金または金
属面に合わせて圧着して前記低融点合金または金属を前
記突出接点上のみに転写することにより電気的接続接点
の形成を実現しようとするものである。[Means for Solving the Problems] In order to solve the above-mentioned problems, the present invention uses a low melting point alloy in forming electrical connection contacts on fine terminal electrodes of a substrate on which fine pitch and fine terminal electrodes are formed. Alternatively, a metal paste containing metal as a main component is filled into the recesses provided on the surface of the support base material. The supporting base material is heated to melt the metal paste filled in the recess, and the protruding contact surface of the substrate on which the protruding contact is formed on the micro terminal electrode group is applied to the molten low melting point alloy or metal surface in the recess. The purpose is to realize the formation of an electrical connection contact by pressing them together and transferring the low melting point alloy or metal only onto the protruding contact.
【０００６】[0006]
【作用】本発明の上記した方法によれば、基板上の微細
端子電極上に簡易に突出接点を信頼性よく形成すること
ができ、かつ、上記突出接点にのみ選択的に低融点合金
または金属を定量均一に転写することができ、簡易で信
頼性の高い電気的接続接点が形成できる。[Operation] According to the above-described method of the present invention, protruding contacts can be easily and reliably formed on fine terminal electrodes on a substrate, and only the protruding contacts can be selectively made of low melting point alloy or metal. can be uniformly transferred in a quantitative manner, and simple and highly reliable electrical connection contacts can be formed.
【０００７】[0007]
【実施例】以下、本発明の一実施例の電気的接続接点の
形成方法ならびにこれを用いた実装基板について図面に
基づき詳細に説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS A method for forming an electrical connection contact according to an embodiment of the present invention and a mounting board using the same will be described in detail below with reference to the drawings.
【０００８】図１（ａ）から（ｄ）は本発明の電気的接
続接点の形成方法の第１の実施例を示す工程断面図であ
る。また、図１（ｅ）は本発明の電気接続接点の形成方
法を用いてＩＣチップを基板上に実装する工程断面図を
示す。FIGS. 1A to 1D are process cross-sectional views showing a first embodiment of the method for forming an electrical connection contact of the present invention. Further, FIG. 1(e) shows a cross-sectional view of the process of mounting an IC chip on a substrate using the method for forming electrical connection contacts of the present invention.
【０００９】図１において、１は凹部を有する支持基材
、２は低融点合金または金属を主成分とする金属ペース
ト、３はスキージ、４はＩＣチップ、５はＩＣチップの
電極パッド、６はバンプ（突出接点）、７および１０は
加熱ヘッド、８は透明端子電極（ＩＴＯ電極）、９はガ
ラス基板である。In FIG. 1, 1 is a support base material having a recessed part, 2 is a metal paste whose main component is a low melting point alloy or metal, 3 is a squeegee, 4 is an IC chip, 5 is an electrode pad of the IC chip, and 6 is a metal paste containing a metal as a main component. Bumps (protruding contacts), 7 and 10 are heating heads, 8 is a transparent terminal electrode (ITO electrode), and 9 is a glass substrate.
【００１０】本発明の第１の実施例では、まず図１（ａ
）、（ｂ）に示すように低融点合金または金属を主成分
とする金属ペースト２を支持基材１の表面に設けられた
凹部にスキージを摺動させ充填する。支持基材１はガラ
ス基板を沸酸水溶液中でエッチングして１００μｍ□深
さ２０μｍの凹部設けたものを使用し、低融点合金また
は金属を主成分とする金属ペースト２としては５００メ
ッシュ以下の粒子からなる共晶半田ペーストを使用した
。次に支持基材１を２３０℃に加熱し、充填された前記
金属ペースト２ｂを溶融して図１（ｃ）に示すように溶
融した低融点合金または金属２ｃを得る。突出接点６は
別個に通常のワイヤボンディング装置を利用して作製す
る。作製方法はキャピラリを通した金属ワイヤの先端に
熱によるエネルギーを加えてボールを形成し、この形成
したボールをＩＣ基板１上の１００μｍ□の電極パッド
５部に熱圧着または超音波またはその併用によって固着
した後、ボールの付け根の金属ワイヤの部分で切断する
ことによって形成する。このようにしてＩＣチップ４上
の接続の必要な電極パッド５上に突出接点６を形成した
。その後、電極パッド５上に突出接点６が形成されたＩ
Ｃチップ４上の突出接点６を溶融した低融点合金または
金属２ｄと対向させて圧着すると、図１（ｄ）に示すよ
うに突出接点６上のみに低融点合金または金属２が転写
され、電気的接続接点が形成される。また、図１（ｅ）
に示すように第１の実施例で得たＩＣチップ４の電極パ
ッド５上に形成された金（Ａｕ）等からなる突出接点と
低融点合金または金属２とからなる電気的接続接点とガ
ラス基板９上の１００μｍ□のＩＴＯ電極８とを対向さ
せ圧着した後、加熱ヘッド１０によって突出接点６上の
低融点合金または金属２を溶融させて固着すると、ＩＣ
チップとガラス基板との接続ができる。In the first embodiment of the present invention, first, FIG.
) and (b), a squeegee is slid into the recesses provided on the surface of the support base material 1 to fill the metal paste 2 containing a low melting point alloy or metal as the main component. The supporting base material 1 is a glass substrate etched in a hydrofluoric acid aqueous solution to provide a recess of 100 μm □ 20 μm deep, and the metal paste 2 whose main component is a low melting point alloy or metal is made of particles of 500 mesh or less. A eutectic solder paste consisting of Next, the supporting base material 1 is heated to 230° C. and the filled metal paste 2b is melted to obtain a molten low melting point alloy or metal 2c as shown in FIG. 1(c). The protruding contacts 6 are manufactured separately using a conventional wire bonding machine. The manufacturing method is to apply thermal energy to the tip of a metal wire passed through a capillary to form a ball, and then attach the formed ball to 5 portions of a 100 μm square electrode pad on an IC substrate 1 by thermocompression bonding, ultrasonic waves, or a combination thereof. After it is fixed, it is formed by cutting the metal wire at the base of the ball. In this way, protruding contacts 6 were formed on the electrode pads 5 on the IC chip 4 that required connection. Thereafter, a protruding contact 6 is formed on the electrode pad 5.
When the protruding contacts 6 on the C-chip 4 are pressed against the molten low melting point alloy or metal 2d, the low melting point alloy or metal 2 is transferred only onto the protruding contacts 6, as shown in FIG. A physical connection contact is formed. Also, Figure 1(e)
As shown in FIG. 2, protruding contacts made of gold (Au) etc. formed on the electrode pads 5 of the IC chip 4 obtained in the first example, electrical connection contacts made of a low melting point alloy or metal 2, and a glass substrate. After pressing the 100 μm square ITO electrode 8 on the protruding contact 6 with the ITO electrode 8 facing each other, the heating head 10 melts and fixes the low melting point alloy or metal 2 on the protruding contact 6.
It is possible to connect the chip and the glass substrate.
【００１１】次に本発明の第２の実施例を示す。図２は
本発明の第２の実施例を示す工程断面図である。１１は
２段突起状突出接点であり、支持基材１に設けた凹部中
の溶融した低融点合金または金属を２段突起状突出接点
上に転写した。この２段突起状突出接点１１はワイヤボ
ンディング装置を用いてキャピラリをループ状の軌跡を
描きループ状の２段突起構造とした。Next, a second embodiment of the present invention will be described. FIG. 2 is a process sectional view showing a second embodiment of the present invention. Reference numeral 11 denotes a two-step protruding contact, and the molten low-melting point alloy or metal in the recess provided in the support base 1 was transferred onto the two-step protruding contact. This two-step protruding contact 11 was formed into a loop-like two-step protrusion structure by drawing a loop-like locus on the capillary using a wire bonding device.
【００１２】図３には２段突起状突出接点を用いた本発
明の電気接続接点を用いた実装断面図を示す。FIG. 3 shows a cross-sectional view of a mounting using the electrical connection contact of the present invention using a two-stage protruding contact.
【００１３】なお、上記実施例においては、電気的接続
接点が形成されたＩＣチップ４をガラス基板９に実装し
た例を示したが、ＩＣチップを実装する基板はガラス基
板に限定されるものではなく、たとえばガラスエポキシ
の基板、セラミック基板、およびフレキシブルプリント
基板等でもよいことは云うまでもない。低融点合金また
は金属を主成分とする金属ペースト２としては５００メ
ッシュ以下の粒子からなる共晶半田ペーストを使用した
が、材質としては鉛（Ｐｂ）、錫（Ｓｎ）、インジウム
（Ｉｎ）を主とする合金またはその単体、あるいはＡｕ
−Ｓｎ２０％等の低融点合金または金属でもよい。[0013] In the above embodiment, an example was shown in which the IC chip 4 on which electrical connection contacts were formed was mounted on the glass substrate 9, but the substrate on which the IC chip is mounted is not limited to a glass substrate. Needless to say, for example, a glass epoxy substrate, a ceramic substrate, a flexible printed circuit board, etc. may be used. As the metal paste 2 whose main component is a low melting point alloy or metal, we used a eutectic solder paste consisting of particles of 500 mesh or less, but the material is mainly lead (Pb), tin (Sn), and indium (In). alloy or its simple substance, or Au
-A low melting point alloy or metal such as 20% Sn may be used.
【００１４】[0014]
【発明の効果】以上に説明したように、本発明の電気的
接続接点の形成方法によれば、ＩＣチップの電極パッド
部に電気的接続接点を従来のネイルヘッドボンディング
技術を用いて形成した突出接点上に、選択的に精度よく
低融点合金または金属を転写することにより容易に形成
することができ、ＩＣチップのガラス基板上の電極への
接続に限らず、各種基板への電気的接続において、従来
困難な超微細接続に効果を発揮するので、きわめて実用
価値が高い。また、本発明の電機的接続接点を用いて接
続実装した基板はＩＣチップ周辺のリードもなく実装用
基板面積を有効かつ最小に利用することが可能となる。As explained above, according to the method for forming an electrical connection contact of the present invention, an electrical connection contact is formed on the electrode pad portion of an IC chip using a conventional nail head bonding technique. It can be easily formed by selectively and precisely transferring a low-melting point alloy or metal onto the contact, and is useful not only for connecting to electrodes on glass substrates of IC chips but also for electrical connections to various substrates. , it is effective for ultra-fine connections that are difficult to make in the past, so it has extremely high practical value. Moreover, the board mounted using the electrical connection contact of the present invention has no leads around the IC chip, and the mounting board area can be effectively and minimized.
【図１】本発明の第１の実施例を示す工程断面図[Fig. 1] Process cross-sectional diagram showing the first embodiment of the present invention
【図２
】本発明の第２の実施例を示す工程断面図[Figure 2
] Process cross-sectional diagram showing the second embodiment of the present invention
【図３】本発
明の第２の実施例を示す実装断面図[Fig. 3] Implementation cross-sectional view showing a second embodiment of the present invention
１ 支持基材
２ 低融点合金または金属を主成分とする金属ペース
ト３ スキージ
４ ＩＣチップ
５ ＩＣチップの電極パッド
６ バンプ（突出接点）
７ 加熱ヘッド
８ 透明端子電極（ＩＴＯ電極）
９ ガラス基板
１０ 加熱ヘッド1 Support base material 2 Metal paste mainly composed of a low melting point alloy or metal 3 Squeegee 4 IC chip 5 Electrode pad of IC chip 6 Bump (protruding contact) 7 Heating head 8 Transparent terminal electrode (ITO electrode) 9 Glass substrate 10 Heating head
Claims (6)
ている基板の微細端子電極上への電気的接続接点の形成
において、低融点合金または金属を主成分とする金属ペ
ーストを支持基材表面に設けられた凹部に充填する工程
、前記支持基材を加熱して前記凹部に充填された金属ペ
ーストを溶融する工程、微細端子電極群上に突出接点が
形成された基板の突出接点面を前記凹部中の溶融した低
融点合金または金属面に合わせて圧着して前記低融点合
金または金属を前記突出接点上のみに転写する工程より
構成されることを特徴とする電気的接続接点の形成方法
。Claim 1: In forming electrical connection contacts on fine terminal electrodes of a substrate on which fine pitch and fine terminal electrodes are formed, a metal paste containing a low melting point alloy or metal as a main component is applied to the surface of the supporting base material. a step of heating the support base material to melt the metal paste filled in the recess; a step of filling the protruding contact surface of the substrate with the protruding contacts formed on the fine terminal electrode group into the recess; A method for forming an electrical connection contact, comprising the step of transferring the low melting point alloy or metal only onto the protruding contact by pressing it onto a molten low melting point alloy or metal surface.
れた基板を加熱しつつ前記基板上の突出接点を前記凹部
中の溶融した低融点合金または金属面に合わせて圧着し
て前記低融点合金または金属を前記突出接点上のみに転
写する工程より構成されることを特徴とする請求項１記
載の電気的接続接点の形成方法。2. While heating the substrate on which the protruding contacts are formed on the micro terminal electrode group, the protruding contacts on the substrate are pressed against the molten low melting point alloy or metal surface in the recess to reduce the low melting point. 2. The method of forming an electrical connection contact according to claim 1, further comprising the step of transferring an alloy or metal only onto the protruding contact.
基板上の電極とを突出電極先端の低融点金属を用いて接
続したことを特徴とする実装基板。3. A mounting board characterized in that a protruding electrode having a low melting point metal at its tip and an electrode on the substrate are connected using the low melting point metal at the tip of the protruding electrode.
とを特徴とする請求項３記載の実装基板。4. The mounting board according to claim 3, wherein the protruding electrode has a two-stage protrusion structure.
を特徴とする請求項３記載の実装基板。5. The mounting board according to claim 3, wherein the protruding electrode has a loop-like structure.
ループ状構造を有することを特徴とする請求項３記載の
実装基板。[Claim 6] The protruding electrode mainly consists of gold,
4. The mounting board according to claim 3, having a loop-like structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2444491A JP2643613B2 (en) | 1991-02-19 | 1991-02-19 | Method of forming electrical connection contact and method of mounting electronic component |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2444491A JP2643613B2 (en) | 1991-02-19 | 1991-02-19 | Method of forming electrical connection contact and method of mounting electronic component |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04264731A true JPH04264731A (en) | 1992-09-21 |
| JP2643613B2 JP2643613B2 (en) | 1997-08-20 |
Family
ID=12138316
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2444491A Expired - Fee Related JP2643613B2 (en) | 1991-02-19 | 1991-02-19 | Method of forming electrical connection contact and method of mounting electronic component |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2643613B2 (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05166881A (en) * | 1991-12-19 | 1993-07-02 | Matsushita Electron Corp | Method for mounting flip chip |
| JPH06124953A (en) * | 1992-10-12 | 1994-05-06 | Matsushita Electron Corp | Bump forming method of semiconductor device |
| US5643831A (en) * | 1994-01-20 | 1997-07-01 | Fujitsu Limited | Process for forming solder balls on a plate having apertures using solder paste and transferring the solder balls to semiconductor device |
| US5872051A (en) * | 1995-08-02 | 1999-02-16 | International Business Machines Corporation | Process for transferring material to semiconductor chip conductive pads using a transfer substrate |
| US5959346A (en) * | 1996-11-11 | 1999-09-28 | Fujitsu Limited | Method for fabricating metal bumps onto electronic device |
| US6025258A (en) * | 1994-01-20 | 2000-02-15 | Fujitsu Limited | Method for fabricating solder bumps by forming solder balls with a solder ball forming member |
| US6271110B1 (en) | 1994-01-20 | 2001-08-07 | Fujitsu Limited | Bump-forming method using two plates and electronic device |
| US6319810B1 (en) | 1994-01-20 | 2001-11-20 | Fujitsu Limited | Method for forming solder bumps |
| US6528346B2 (en) | 1994-01-20 | 2003-03-04 | Fujitsu Limited | Bump-forming method using two plates and electronic device |
-
1991
- 1991-02-19 JP JP2444491A patent/JP2643613B2/en not_active Expired - Fee Related
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05166881A (en) * | 1991-12-19 | 1993-07-02 | Matsushita Electron Corp | Method for mounting flip chip |
| JPH06124953A (en) * | 1992-10-12 | 1994-05-06 | Matsushita Electron Corp | Bump forming method of semiconductor device |
| US5643831A (en) * | 1994-01-20 | 1997-07-01 | Fujitsu Limited | Process for forming solder balls on a plate having apertures using solder paste and transferring the solder balls to semiconductor device |
| US6025258A (en) * | 1994-01-20 | 2000-02-15 | Fujitsu Limited | Method for fabricating solder bumps by forming solder balls with a solder ball forming member |
| US6271110B1 (en) | 1994-01-20 | 2001-08-07 | Fujitsu Limited | Bump-forming method using two plates and electronic device |
| US6319810B1 (en) | 1994-01-20 | 2001-11-20 | Fujitsu Limited | Method for forming solder bumps |
| US6528346B2 (en) | 1994-01-20 | 2003-03-04 | Fujitsu Limited | Bump-forming method using two plates and electronic device |
| US5872051A (en) * | 1995-08-02 | 1999-02-16 | International Business Machines Corporation | Process for transferring material to semiconductor chip conductive pads using a transfer substrate |
| US5959346A (en) * | 1996-11-11 | 1999-09-28 | Fujitsu Limited | Method for fabricating metal bumps onto electronic device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2643613B2 (en) | 1997-08-20 |
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