JPH04260209A - High frequency amplifier - Google Patents

High frequency amplifier

Info

Publication number
JPH04260209A
JPH04260209A JP2203191A JP2203191A JPH04260209A JP H04260209 A JPH04260209 A JP H04260209A JP 2203191 A JP2203191 A JP 2203191A JP 2203191 A JP2203191 A JP 2203191A JP H04260209 A JPH04260209 A JP H04260209A
Authority
JP
Japan
Prior art keywords
high frequency
amplification element
level
frequency amplification
frequency
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2203191A
Other languages
Japanese (ja)
Inventor
Takushi Mochizuki
拓志 望月
Nobutaka Tauchi
庸貴 田内
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
NEC Engineering Ltd
Original Assignee
NEC Corp
NEC Engineering Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, NEC Engineering Ltd filed Critical NEC Corp
Priority to JP2203191A priority Critical patent/JPH04260209A/en
Publication of JPH04260209A publication Critical patent/JPH04260209A/en
Pending legal-status Critical Current

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  • Control Of Amplification And Gain Control (AREA)
  • Amplifiers (AREA)
  • Microwave Amplifiers (AREA)

Abstract

PURPOSE:To considerably adjust the level of the gain of one high frequency amplifying element to be by-passed, to simplify the circuit, and to obtain a stable output level even at the time of reduction of the output level by eliminating a need of a gain variable circuit and a gain control circuit which are required in a conventional example and always keeping the output level of a high frequency amplifying element in the preceding stage of a switching circuit. CONSTITUTION:A line switch 3 which selects whether a high frequency amplifying element 6 in the succeeding stage should be connected or by-passed and a switch control circuit part 4 which controls this line switch by a request signal from the external which reduces the output-side high frequency level are provided between a high frequency amplifying element 2 in the preceding stage and the high frequency amplifying element 6 in the succeeding stage.

Description

【発明の詳細な説明】[Detailed description of the invention]

【0001】0001

【産業上の利用分野】本発明は高周波増幅器に関し、特
にマイクロ波の出力部に設けられたレベル可変回路を改
良した高周波増幅器に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high frequency amplifier, and more particularly to a high frequency amplifier having an improved level variable circuit provided at a microwave output section.

【0002】0002

【従来の技術】従来、この種の高周波増幅器の出力レベ
ル可変回路は、図3に示すように、高周波増幅素子12
,13と、高周波増幅素子12,13のバイアス電圧を
制御するバイアス電圧制御回路14,15で構成されて
いる。又別の従来例として図4に示すように、高周波増
幅素子16,18と、高周波増幅素子16の出力部の高
周波信号を減衰させる為の利得可変回路17とその利得
可変制御を行う利得制御回路19とを有している。
2. Description of the Related Art Conventionally, an output level variable circuit for a high frequency amplifier of this type has a high frequency amplification element 12 as shown in FIG.
, 13, and bias voltage control circuits 14, 15 that control the bias voltages of the high frequency amplification elements 12, 13. Another conventional example, as shown in FIG. 4, includes high frequency amplification elements 16 and 18, a variable gain circuit 17 for attenuating the high frequency signal at the output section of the high frequency amplification element 16, and a gain control circuit that performs variable gain control. It has 19.

【0003】次に動作について説明する。図3の高周波
増幅素子は一般にベース接地型のバイポーラトランジス
タの様なB,C級動作の高周波増幅素子でそこに印加す
るバイアス電圧によりベース接地型のバイポーラトラン
ジスタではコレクタ電圧を制御することにより、出力レ
ベルの飽和出力を可変する。一般的には最終段の高周波
増幅素子13をバイアス電圧制御回路15で出力レベル
可変を行うのが通常である。図4は高周波増幅素子16
,18にGaAsFETの様なA級動作の高周波増幅素
子を用いた場合の出力可変機能を有した高周波増幅器の
例であり、利得制御回路19により利得可変回路17の
バイアス電流,あるいはバイアス電圧を変化させて、利
得可変回路17の減衰量を制御して高周波増幅素子18
の入力信号レベルを増減させることにより、出力レベル
を増加又は減少させている。
Next, the operation will be explained. The high frequency amplification element shown in Fig. 3 is generally a high frequency amplification element of class B or C operation such as a common base type bipolar transistor. Variable level saturation output. Generally, the output level of the final stage high frequency amplification element 13 is controlled by a bias voltage control circuit 15. FIG. 4 shows the high frequency amplification element 16
, 18 is an example of a high frequency amplifier with a variable output function when a high frequency amplification element of class A operation such as a GaAsFET is used, and the bias current or bias voltage of the variable gain circuit 17 is changed by the gain control circuit 19. By controlling the attenuation amount of the variable gain circuit 17, the high frequency amplifying element 18
By increasing or decreasing the input signal level, the output level is increased or decreased.

【0004】0004

【発明が解決しようとする課題】この従来の高周波増幅
器の出力レベル可変回路では、前者の場合にはレベル可
変を高周波増幅素子のバイアス電圧制御により行ってお
り、後者では利得可変回路の減衰量制御で行っているの
で、出力レベル低下時の低消費電力化が望めない。特に
図3の様な構成の場合にレベル可変範囲が小さい。また
図3のように、2素子以上のバイアス制御を行うと、回
路構成がさらに複雑になるのみならず、出力レベルの温
度に対する安定性が劣化する欠点もある。さらに、両方
の従来例のぞれぞれがバイアス電圧制御回路、利得制御
回路等を構成しなければならないので、回路構成が複雑
となり、大型化するという欠点がある。
[Problem to be Solved by the Invention] In the conventional variable output level circuit of a high frequency amplifier, in the former case, the level is varied by controlling the bias voltage of the high frequency amplification element, and in the latter case, the level is varied by controlling the attenuation amount of the variable gain circuit. Therefore, it is not possible to reduce power consumption when the output level decreases. Particularly in the case of the configuration shown in FIG. 3, the level variable range is small. Further, as shown in FIG. 3, if bias control is performed on two or more elements, not only the circuit configuration becomes more complicated, but also the stability of the output level with respect to temperature deteriorates. Furthermore, since both conventional examples must each include a bias voltage control circuit, a gain control circuit, etc., the circuit structure becomes complex and large in size.

【0005】[0005]

【課題を解決するための手段】本発明の高周波増幅器は
前段の高周波増幅素子と、後段の高周波増幅素子との間
に前記後段の高周波増幅素子を接続するか又はバイパス
するかを選択する高周波信号切替部と、出力側高周波レ
ベルを低下させる外部からの要求信号により前記高周波
信号切替部を制御する切替器制御回路部とを有する。
[Means for Solving the Problems] The high-frequency amplifier of the present invention provides a high-frequency signal that selects whether to connect or bypass the high-frequency amplification element in the latter stage between the high-frequency amplification element in the former stage and the high-frequency amplification element in the latter stage. It has a switching section and a switching device control circuit section that controls the high frequency signal switching section based on an external request signal that lowers the output side high frequency level.

【0006】[0006]

【実施例】次に、本発明について図面を参照して説明す
る。
DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, the present invention will be explained with reference to the drawings.

【0007】図1は本発明の第1の実施例のブロック図
である。高周波増幅素子2と、高周波増幅素子6との間
に、高周波信号切替部3、切替器制御回路部4を備えて
高周波信号切替部3の切り替え制御を行う。高周波信号
切替部3は高周波増幅素子6の入力部に接続される主線
路5及び高周波増幅素子6をバイパスして出力部に接続
されるバイパス線路7のどちらか一方の線路を選択する
。通常の出力レベルを得たい場合には、高周波信号線路
切替部3は主線路5側を選択して、高周波増幅素子6の
出力をそのまま出力端子8へ送出する。ここで、バイパ
ス線路7は、高周波増幅素子6の出力側接続点から高周
波信号切替部3の開放接点までの電気的線路長が1/2
波長になる様にしてあるので、主線路5になんら影響を
与えない。また出力レベルを低下させる場合には、高周
波信号切替器3をバイパス線路7側に選択して高周波増
幅素子6をバイパスするので、高周波増幅素子の利得分
だけ出力レベルを低下させることができる。
FIG. 1 is a block diagram of a first embodiment of the present invention. A high frequency signal switching section 3 and a switch control circuit section 4 are provided between the high frequency amplifying element 2 and the high frequency amplifying element 6 to perform switching control of the high frequency signal switching section 3. The high frequency signal switching section 3 selects either the main line 5 connected to the input section of the high frequency amplification element 6 and the bypass line 7 connected to the output section by bypassing the high frequency amplification element 6. When it is desired to obtain a normal output level, the high frequency signal line switching section 3 selects the main line 5 side and sends the output of the high frequency amplification element 6 to the output terminal 8 as it is. Here, the bypass line 7 has an electrical line length of 1/2 from the output side connection point of the high frequency amplification element 6 to the open contact point of the high frequency signal switching section 3.
Since the wavelength is set so that the main line 5 is not affected in any way. Furthermore, when lowering the output level, the high frequency signal switch 3 is selected to the bypass line 7 side and the high frequency amplification element 6 is bypassed, so the output level can be lowered by the gain of the high frequency amplification element.

【0008】図2は本発明の第2の実施例のブロック図
である。第2の実施例で、第1の実施例と相違する点は
、高周波増幅素子2,6のそれぞれにバイアス電圧制御
回路9,10を合わせ持ち、第1の実施例の高周波信号
切替部3に高周波リレー11を用いた回路構成をとって
いる。第2の実施例では、可変範囲の狭いメインの出力
レベルの設定をバイアス電圧制御回路10による高周波
増幅素子6で行い、大きな出力レベル降下が必要な場合
には、高周波リレー11を切替制御回路部4にて作動さ
せ、高周波増幅素子6をバイパスさせて出力レベル低下
を行う。この出力レベル低下した出力レベルをさらにレ
ベル調整する場合には、高周波増幅素子2のバイアス電
圧制御回路9にて微調整設定を行う。なお、高周波増幅
素子にベース接地型のバイポーラトランジスタ等を用い
た場合に、切替え回路をバイパス線路側に選択すると、
バイパスされる高周波増幅素子部に入力信号がドライブ
されなくなり、コレクタ電流が流れなくなる為、出力レ
ベル低下時において低消費電力をはかることができる。
FIG. 2 is a block diagram of a second embodiment of the invention. The difference between the second embodiment and the first embodiment is that the high frequency amplification elements 2 and 6 are also provided with bias voltage control circuits 9 and 10, respectively, and the high frequency signal switching section 3 of the first embodiment is The circuit configuration uses a high frequency relay 11. In the second embodiment, the main output level with a narrow variable range is set by the high frequency amplifying element 6 by the bias voltage control circuit 10, and when a large output level drop is required, the high frequency relay 11 is set by the switching control circuit section. 4 to bypass the high frequency amplification element 6 and lower the output level. In order to further adjust the output level that has been lowered, the bias voltage control circuit 9 of the high frequency amplification element 2 performs fine adjustment settings. In addition, when a base-grounded bipolar transistor or the like is used as the high-frequency amplification element, if the switching circuit is selected on the bypass line side,
Since the input signal is no longer driven to the bypassed high-frequency amplification element section and the collector current no longer flows, it is possible to reduce power consumption when the output level decreases.

【0009】[0009]

【発明の効果】以上説明したように本発明は、2つの高
周波増幅素子間に、主線路及び後段高周波増幅素子のバ
イパス線路の切り替え回路を備えて出力レベル可変を行
うことにより、バイパスする一方の高周波増幅素子の利
得分を大幅にレベル調整することができる。また、従来
例のような、利得可変回路及び利得制御回路を必要とし
ないので回路を簡易にできる。また、切替え回路前段の
高周波増幅素子の出力レベルは常に飽和状態にある為出
力レベル低下をさせても安定した出力レベルが得られる
という効果がある。又、高周波増幅素子にベース接地型
トランジスタを用い、この高周波増幅素子をバイパスす
る場合には、この増幅素子の低消費電力化をはかること
ができる。
As explained above, the present invention provides a switching circuit for the main line and the bypass line of the subsequent high-frequency amplification element between two high-frequency amplification elements to vary the output level. It is possible to significantly adjust the level of the gain of the high frequency amplification element. Further, unlike the conventional example, a variable gain circuit and a gain control circuit are not required, so the circuit can be simplified. Furthermore, since the output level of the high-frequency amplifying element before the switching circuit is always in a saturated state, a stable output level can be obtained even if the output level is lowered. Further, when a common base type transistor is used as the high frequency amplification element and the high frequency amplification element is bypassed, it is possible to reduce the power consumption of this amplification element.

【図面の簡単な説明】[Brief explanation of the drawing]

【図1】本発明の第1の実施例を示す高周波増幅器のブ
ロック図である。
FIG. 1 is a block diagram of a high frequency amplifier showing a first embodiment of the present invention.

【図2】本発明の第2の実施例のブロック図である。FIG. 2 is a block diagram of a second embodiment of the invention.

【図3】従来の周波増幅器の第1例のブロック図である
FIG. 3 is a block diagram of a first example of a conventional frequency amplifier.

【図4】従来の高周波増幅器の第2例のブロック図であ
る。
FIG. 4 is a block diagram of a second example of a conventional high frequency amplifier.

【符号の説明】[Explanation of symbols]

1    入力端子 2,6    高周波増幅素子 3    高周波信号切替部 4    切替器制御回路部 5    主線路 7    バイパス線路 8    出力端子 9,10    バイアス電圧制御回路11    高
周波リレー
1 Input terminals 2, 6 High frequency amplification element 3 High frequency signal switching section 4 Switch control circuit section 5 Main line 7 Bypass line 8 Output terminals 9, 10 Bias voltage control circuit 11 High frequency relay

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】  前段の高周波増幅素子と、後段の高周
波増幅素子との間に前記後段の高周波増幅素子を接続す
るか又はバイパスするかを選択する高周波信号切替部と
、出力側高周波レベルを低下させる外部からの要求信号
により前記高周波信号切替部を制御する切替器制御回路
部とを有することを特徴とする高周波増幅器。
1. A high-frequency signal switching unit for selecting whether to connect or bypass the latter-stage high-frequency amplification element between the former-stage high-frequency amplification element and the latter-stage high-frequency amplification element, and reducing the output side high-frequency level. and a switch control circuit section that controls the high frequency signal switching section based on a request signal from the outside.
【請求項2】  前記前段の高周波増幅素子および前記
後段の高周波増幅素子のそれぞれが出力レベルを微調整
するバイアス電圧制御回路によりレベル制御されること
を特徴とする請求項1記載の高周波増幅器。
2. The high-frequency amplifier according to claim 1, wherein the level of each of the front-stage high-frequency amplification element and the second-stage high-frequency amplification element is controlled by a bias voltage control circuit that finely adjusts the output level.
【請求項3】  前記後段の高周波増幅素子の出力部と
前記高周波信号切替部のバイパス端子との間を接続する
バイパス線路の長さを使用帯域周波数のほぼ1/2n(
nは整数)波長の線路長とすることを特徴とする請求項
1記載の高周波増幅器。
3. The length of the bypass line connecting the output section of the high-frequency amplification element in the subsequent stage and the bypass terminal of the high-frequency signal switching section is approximately 1/2n (
2. The high frequency amplifier according to claim 1, wherein n is an integer) and a line length of a wavelength.
JP2203191A 1991-02-15 1991-02-15 High frequency amplifier Pending JPH04260209A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2203191A JPH04260209A (en) 1991-02-15 1991-02-15 High frequency amplifier

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2203191A JPH04260209A (en) 1991-02-15 1991-02-15 High frequency amplifier

Publications (1)

Publication Number Publication Date
JPH04260209A true JPH04260209A (en) 1992-09-16

Family

ID=12071610

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2203191A Pending JPH04260209A (en) 1991-02-15 1991-02-15 High frequency amplifier

Country Status (1)

Country Link
JP (1) JPH04260209A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6172559B1 (en) 1998-02-27 2001-01-09 Nec Corporation Variable gain amplifying device
JP2009188962A (en) * 2008-02-09 2009-08-20 New Japan Radio Co Ltd Amplifier
JP2009207209A (en) * 2009-06-18 2009-09-10 Avago Technologies Wireless Ip (Singapore) Pte Ltd Power amplifier for plurality of power modes and having bias modulating option without bypass switch
JP2013507863A (en) * 2010-02-11 2013-03-04 ▲華▼▲為▼▲終▼端有限公司 Routing device and signal transmission method for wireless local area access network

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5321507A (en) * 1976-08-12 1978-02-28 Nec Corp Transmitted output switching unit

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5321507A (en) * 1976-08-12 1978-02-28 Nec Corp Transmitted output switching unit

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6172559B1 (en) 1998-02-27 2001-01-09 Nec Corporation Variable gain amplifying device
JP2009188962A (en) * 2008-02-09 2009-08-20 New Japan Radio Co Ltd Amplifier
JP2009207209A (en) * 2009-06-18 2009-09-10 Avago Technologies Wireless Ip (Singapore) Pte Ltd Power amplifier for plurality of power modes and having bias modulating option without bypass switch
JP2013507863A (en) * 2010-02-11 2013-03-04 ▲華▼▲為▼▲終▼端有限公司 Routing device and signal transmission method for wireless local area access network
US9215671B2 (en) 2010-02-11 2015-12-15 Huawei Device Co., Ltd. Routing device and signal transmitting method for wireless local area network

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