JPH04248123A - Ti substrate blank and its production - Google Patents

Ti substrate blank and its production

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Publication number
JPH04248123A
JPH04248123A JP2287191A JP2287191A JPH04248123A JP H04248123 A JPH04248123 A JP H04248123A JP 2287191 A JP2287191 A JP 2287191A JP 2287191 A JP2287191 A JP 2287191A JP H04248123 A JPH04248123 A JP H04248123A
Authority
JP
Japan
Prior art keywords
annealing
blank
vacuum
flatness
less
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2287191A
Other languages
Japanese (ja)
Inventor
Kozo Hoshino
星野晃三
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kobe Steel Ltd
Original Assignee
Kobe Steel Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kobe Steel Ltd filed Critical Kobe Steel Ltd
Priority to JP2287191A priority Critical patent/JPH04248123A/en
Publication of JPH04248123A publication Critical patent/JPH04248123A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To offer a Ti substrate blank having good flatness with <=5mumRa in average with little variation. CONSTITUTION:The substrate blank consists of pure Ti containing 0.15-0.4wt.% oxygen, impurities of <=0.010wt.% hydrogen, <=0.05wt.% nitrogen, <=0.05wt.% Fe, and other inevitable impurities and has >=0.07mumRa surface roughness. This Ti substrate blank for a magnetic disk has good peeling property after vacuum annealing or Ar atmosphere annealing and has excellent flatness. This blank is produced by grinding the surface of the pure Ti substrate having the above compsn. with a grindstone comprising rough grinding particles of <800 grain size and then annealing the substrate in vacuum or Ar atmosphere. Annealing is performed at 600-700o under 200-2000kg/dm<2> pressure, and for vacuum annealing, in a higher vacuum degree than 10<-5> Torr.

Description

【発明の詳細な説明】[Detailed description of the invention]

【0001】0001

【産業上の利用分野】本発明は平坦度の優れたTi基盤
ブランクに係り、更に詳細には、高記録密度磁気ディス
ク用に適するTi基盤ブランク及びその製造方法に関す
る。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a Ti-based blank with excellent flatness, and more particularly to a Ti-based blank suitable for use in high-density magnetic disks and a method for manufacturing the same.

【0002】0002

【従来の技術】磁気ディスクの記録密度は年々高まりつ
つある。これに伴い、従来の塗布型からスパッタ型へと
記録方式の変更、及び小径薄肉ディスク基盤へと小型化
が進行しつつある。
2. Description of the Related Art The recording density of magnetic disks is increasing year by year. Along with this, the recording method is changing from the conventional coating type to the sputtering type, and miniaturization is progressing toward small diameter and thin disk substrates.

【0003】これらの高記録密度化の要望から、従来よ
り用いられている素材の5086系アルミニウム合金に
ついて、例えば、特公昭62−2018号にてメッキ性
に優れるAl合金が提案されている。しかしながら、前
記の如く、近年では薄肉化の進展が著しく、このような
従来の素材の製造工程のままでは解決し得ない問題が発
生してきた。
[0003] In response to these demands for higher recording density, an Al alloy with excellent plating properties has been proposed in Japanese Patent Publication No. 62-2018, for example, as opposed to the conventionally used 5086 series aluminum alloy. However, as mentioned above, in recent years, there has been a remarkable progress in thinning the walls, and problems have arisen that cannot be solved using the conventional manufacturing process of such materials.

【0004】すなわち、小型ディスク基盤においては、
その板厚が1.905mm厚(5.25in径)から1
.27mm厚、1.0mm厚、0.8mm厚及び0.6
mm厚等が考案されてきた。更にこれに並行して、〔外
径〕/〔板厚〕の比率も大きくなり、磁気ディスク製造
工程中でのハンドリング等による変形の問題が顕在化し
てきた。この改善のため、Al合金の高強度化が図られ
てきたが、Al材では如何に高強度化しても硬さがHv
(ビッカース硬さ)にて高々90程度であり、また弾性
率は合金化によっては向上せず、著しい効果は得られて
いない。
[0004] That is, in a small disk substrate,
The plate thickness is 1.905 mm (5.25 inch diameter) to 1
.. 27mm thickness, 1.0mm thickness, 0.8mm thickness and 0.6
mm thickness etc. have been devised. Furthermore, in parallel with this, the ratio of [outer diameter]/[plate thickness] has also increased, and the problem of deformation due to handling during the magnetic disk manufacturing process has become apparent. To improve this, efforts have been made to increase the strength of Al alloys, but no matter how high the strength of Al materials, the hardness remains at Hv.
(Vickers hardness) is about 90 at most, and the elastic modulus is not improved by alloying, so no significant effect has been obtained.

【0005】[0005]

【発明が解決しようとする課題】これに対して、■高硬
度、■軽量、■非磁性の条件を満たす金属として、特開
昭59−151335号等においてTi合金の使用が提
案された。しかしながら、これらTi合金においても種
々の問題があり、実用化がなされていない。
[Problems to be Solved by the Invention] In order to solve this problem, the use of a Ti alloy was proposed in JP-A-59-151335 and other publications as a metal that satisfies the following conditions: (1) high hardness, (2) light weight, and (3) non-magnetic properties. However, these Ti alloys also have various problems and have not been put into practical use.

【0006】すなわち、これらTi合金は極めて加工性
が悪く、良好な平坦度を得ることが困難であると共に、
ダイレクトスパッタ(Ni−Pの下地メッキなしで磁性
膜形成処理を行う方法で、コストダウン上非常に有利で
ある)により磁性膜を形成したときにエラーが多発する
ためである。
[0006] In other words, these Ti alloys have extremely poor workability, and it is difficult to obtain good flatness.
This is because errors occur frequently when a magnetic film is formed by direct sputtering (a method of forming a magnetic film without Ni--P underplating, which is very advantageous in terms of cost reduction).

【0007】この問題を解決するため、本発明者らは、
先に、高記録密度磁気ディスクにおけるエラー発生が少
なく、平坦度の良好なTi基盤ブランクの焼鈍方法を特
願平2−57494号にて提案した。この焼鈍方法は、
不純物として、水素0.010%以下、酸素0.40%
以下、窒素0.05%以下、鉄0.1%以下及びその他
不可避的不純物からなる純Tiを鋳造・均質化加熱・熱
間圧延・冷間圧延・中間焼鈍及び冷間圧延の常法に従っ
た工程で製造したTi基盤ブランクについて、焼鈍温度
を500℃以上640℃以下、加圧力を50〜1000
kg/dm2の条件でプレス焼鈍を施すことを特徴とす
る焼鈍方法である。
[0007] In order to solve this problem, the present inventors
Previously, in Japanese Patent Application No. 2-57494, we proposed a method for annealing a Ti-based blank that causes fewer errors and has good flatness in high-density magnetic disks. This annealing method is
Impurities: hydrogen 0.010% or less, oxygen 0.40%
Hereinafter, pure Ti consisting of 0.05% or less nitrogen, 0.1% or less iron, and other unavoidable impurities was cast, homogenized, heated, hot rolled, cold rolled, intermediate annealed, and cold rolled according to the conventional methods. For the Ti base blank manufactured in the process, the annealing temperature was 500°C or more and 640°C or less, and the pressing force was 50 to 1000°C.
This is an annealing method characterized by performing press annealing under conditions of kg/dm2.

【0008】しかし、この焼鈍方法では、得られる平坦
度の平均値がせいぜい6〜10μmRaであり、ばらつ
きを考慮にいれると、全基盤の平坦度を保証できるもの
ではないことが判明した。
However, with this annealing method, the average value of the obtained flatness is at most 6 to 10 μmRa, and when variations are taken into account, it has been found that the flatness of the entire substrate cannot be guaranteed.

【0009】本発明は、上記従来技術の欠点を解消して
、平均値で5μmRa以下程度の良好な平坦度を、ばら
つき少なく得られるTi基盤ブランクを提供すること、
並びにその製造方法を提供することを目的とするもので
ある。
[0009] The present invention eliminates the drawbacks of the above-mentioned prior art and provides a Ti substrate blank that can obtain good flatness of about 5 μm Ra or less on average with little variation.
The object of the present invention is to provide a method for producing the same.

【0010】0010

【課題を解決するための手段】前記課題を解決するため
、本発明者は、Ti基盤ブランクの平坦度改善策につい
て種々の試験を行った結果、表面状態をコントロールす
ることにより、真空焼鈍での基盤の密着を極力抑えるこ
とができることを見い出した。
[Means for Solving the Problems] In order to solve the above problems, the present inventor conducted various tests on measures to improve the flatness of Ti substrate blanks, and found that by controlling the surface condition, the flatness of Ti substrate blanks could be improved by vacuum annealing. We have discovered that it is possible to minimize the adhesion of the base.

【0011】すなわち、平坦度を良くするためには、真
空焼鈍はできる限り高温、高圧力、長時間が良いが、逆
に剥離が困難となり、たとえ良好な平坦度が得られても
剥離により変形させてしまい、全く意味をなさない状態
にもなり得る。この現象の発生原因の解明に努めたとこ
ろ、チタンは非常に活性な金属であるため、真空焼鈍を
行う際に表面の酸化皮膜がマトリックス中に固溶・拡散
していき、表面が裸の状態となり、チタン同士が固相接
合された状態になることを究明した。この防止のために
はチタンに拡散しない元素成分相を表面に塗布すること
が望ましい。しかし、この方法は、表面に付着している
化合相を後工程にて除去することが必要となると共に真
空炉を汚すため、コスト・環境の点から望ましくないこ
とが判明した。
That is, in order to improve the flatness, vacuum annealing should be performed at as high a temperature, under high pressure, and for a long time as possible, but on the other hand, peeling becomes difficult, and even if good flatness is obtained, deformation occurs due to peeling. This can lead to a situation that makes no sense at all. When we tried to elucidate the cause of this phenomenon, we found that because titanium is a very active metal, during vacuum annealing, the oxide film on the surface dissolves and diffuses into the matrix, leaving the surface bare. It was determined that the titanium particles were bonded together in a solid state. To prevent this, it is desirable to coat the surface with an elemental component phase that does not diffuse into titanium. However, this method was found to be undesirable in terms of cost and environment, as it required removal of the compound phase adhering to the surface in a subsequent step and also contaminated the vacuum furnace.

【0012】そこで、本発明者は、他の方策について更
に研究開発を進めたところ、表面を粗面化することによ
り、基盤同士の接触面積を減少させ、たとえ一部接合さ
れたとしても接合力が小さく、容易に剥離可能な状態に
できることを究明し、ここに本発明を完成したものであ
る。
[0012] Therefore, the inventor of the present invention conducted further research and development on other measures and found that by roughening the surface, the contact area between the bases can be reduced, and even if they are partially joined, the joining force will be reduced. The present invention has now been completed by finding out that it can be made into a small and easily removable state.

【0013】すなわち、本発明は、酸素:0.15〜0
.4wt%を含み、不純物として、水素:0.010w
t%以下、窒素:0.05wt%以下、Fe:0.05
wt%以下及びその他の不可避的不純物を含むTiから
なる純Tiにて構成される基盤ブランクにおいて、その
表面粗度が0.07μmRa以上であることを特徴とす
る真空焼鈍又はAr雰囲気焼鈍後の剥離性が良く、平坦
度の優れる磁気ディスク用Ti基盤ブランクを要旨とす
るものである。
That is, in the present invention, oxygen: 0.15 to 0
.. Contains 4wt%, hydrogen: 0.010w as an impurity
t% or less, nitrogen: 0.05wt% or less, Fe: 0.05
Peeling after vacuum annealing or Ar atmosphere annealing in a substrate blank made of pure Ti containing Ti containing wt% or less and other unavoidable impurities, characterized in that the surface roughness is 0.07 μm Ra or more The purpose of this invention is to provide a Ti-based blank for magnetic disks that has good properties and flatness.

【0014】また、その製造方法は、前記組成を有する
純Tiにて構成される基盤ブランクについて、その表面
を、粒度800番より粗い砥粒から構成される研削砥石
で加工した後、真空焼鈍又はAr雰囲気焼鈍を施すこと
を特徴とするものである。
[0014] Furthermore, the manufacturing method includes processing the surface of a substrate blank made of pure Ti having the above composition with a grinding wheel made of abrasive grains coarser than No. 800, and then vacuum annealing or It is characterized by performing Ar atmosphere annealing.

【0015】以下に本発明を更に詳細に説明する。The present invention will be explained in more detail below.

【0016】[0016]

【作用】まず、本発明において、基盤材として純Tiを
使用するのは、研磨仕上げ後のピットの原因となる金属
間化合物をなくすためである。
[Operation] First, in the present invention, pure Ti is used as the base material in order to eliminate intermetallic compounds that cause pits after polishing.

【0017】Tiにおける合金元素としてはAl、V等
を初めとして何種類かあるが、いずれも金属間化合物を
形成し、研磨仕上げ時に脱落し、ピットとなって記録の
エラーとなるため、このような合金元素の添加は避けね
ばならない。したがつて、本発明においては純Tiの使
用が必須である。但し、純Tiは、以下に説明するとお
り、特定の組成のものである必要がある。
There are several types of alloying elements in Ti, including Al and V, but all of them form intermetallic compounds and fall off during polishing, forming pits and causing recording errors. The addition of alloying elements must be avoided. Therefore, in the present invention, it is essential to use pure Ti. However, pure Ti needs to have a specific composition as explained below.

【0018】酸素は、Tiマトリックスの強化元素とし
て働くため、多いことが望ましく、0.15wt%以上
とする。しかし、0.4wt%より多いと研磨時の粒界
浸食の原因となり易いので、0.4wt%以下とする。
Since oxygen acts as a reinforcing element for the Ti matrix, it is desirable to have a large amount of oxygen, and the content is preferably 0.15 wt % or more. However, if it is more than 0.4 wt%, it tends to cause grain boundary erosion during polishing, so it is set to 0.4 wt% or less.

【0019】FeもTiと化合し金属間化合物を作るた
め、不純物として少ないことが必要であり、0.05w
t%以下とするべきである。
[0019] Since Fe also combines with Ti to form an intermetallic compound, it is necessary to have a small amount as an impurity, and 0.05w
It should be less than t%.

【0020】その他の不純物として、水素、窒素等は焼
鈍中及び焼鈍後の冷却時に結晶粒界に移動し、研磨時に
優先浸食され溝を形成するため、少ないことが必要であ
り、水素は0.010wt%以下、窒素は0.05wt
%以下とするべきである。
Other impurities such as hydrogen and nitrogen move to the grain boundaries during annealing and during cooling after annealing, and are preferentially eroded during polishing to form grooves, so they must be kept in small amounts. 010wt% or less, nitrogen is 0.05wt
% or less.

【0021】上記組成の純Ti基盤ブランクは、鋳造、
均質化加熱、熱間圧延、冷間圧延、中間焼鈍及び最終冷
間圧延の常法に従った製造工程によりブランクにするが
、このブランクは、以下に説明するように、研削及び焼
鈍に供される。
[0021] The pure Ti base blank having the above composition can be produced by casting,
A blank is produced by the conventional manufacturing process of homogenization heating, hot rolling, cold rolling, intermediate annealing and final cold rolling, and this blank is subjected to grinding and annealing as explained below. Ru.

【0022】ブランクの表面粗度は、剥離性を高めるた
めに0.07μmRa以上が必要である。この表面粗度
を形成する方法としては、ラッピング等の方法でも可能
ではあるが、後工程の容易さから、いわゆる固定砥石に
よる研削が好ましい。固定砥石による研削で当該表面粗
度を得るためには、800番より粗いサイズの砥粒から
構成されている研削砥石の使用が必要である。なお、表
面粗度に上限はないが、本発明法による工程後の研削若
しくは研磨工程にて粗面が容易に研磨できるためには、
実質上0.5μmRa以下が望ましい。
The surface roughness of the blank needs to be 0.07 μmRa or more in order to improve releasability. Although methods such as lapping can be used to form this surface roughness, grinding using a so-called fixed grindstone is preferable from the viewpoint of ease of post-processing. In order to obtain the surface roughness by grinding with a fixed grindstone, it is necessary to use a grinding wheel composed of abrasive grains coarser than No. 800. Although there is no upper limit to the surface roughness, in order for the rough surface to be easily polished in the grinding or polishing step after the process of the present invention,
It is desirable that Ra is substantially 0.5 μm or less.

【0023】焼鈍においては、酸素分圧が高すぎるとT
i表面の酸化が進行し易いため、真空焼鈍又はAr雰囲
気焼鈍とする。真空焼鈍の場合、10−5Torrより
高い真空度が好ましい。これより低い真空度ではTi表
面の酸化が進行する恐れがある。なお、不活性ガスのう
ち、Tiと反応しないArについてのみは使用し、この
不活性ガス雰囲気で焼鈍することも可能である。
During annealing, if the oxygen partial pressure is too high, T
Since oxidation of the i surface progresses easily, vacuum annealing or Ar atmosphere annealing is used. In the case of vacuum annealing, a degree of vacuum higher than 10 −5 Torr is preferred. If the degree of vacuum is lower than this, oxidation of the Ti surface may proceed. Note that among the inert gases, it is also possible to use only Ar, which does not react with Ti, and perform annealing in this inert gas atmosphere.

【0024】上述の表面粗度を有するTiブランクに真
空焼鈍又はAr雰囲気焼鈍を施すことにより、良好な平
坦度は得られるものの、更に平坦度の優れたブランク材
とするためには、焼鈍温度は600℃以上、加圧力は2
00kg/dm2以上が好ましい。700℃超ではもは
や効果が飽和すると共に、焼鈍用治具(バネ)自体が軟
化してしまい平坦度向上に寄与しなくなる。また、20
00kg/dm2超では幾ら粗面化していても材料自体
の拡散が著しく、接合力が高まり、剥離が困難となる。 なお、保持時間は、1時間以上10時間以下が望ましい
。10時間を超える焼鈍は、特に真空雰囲気を考えると
、非常に非経済的である。
Although good flatness can be obtained by subjecting a Ti blank having the above-mentioned surface roughness to vacuum annealing or Ar atmosphere annealing, the annealing temperature must be adjusted in order to obtain a blank material with even better flatness. 600℃ or more, pressure is 2
00 kg/dm2 or more is preferable. If the temperature exceeds 700° C., the effect is saturated and the annealing jig (spring) itself becomes soft and no longer contributes to improving flatness. Also, 20
If it exceeds 00 kg/dm2, no matter how rough the surface is, the material itself will significantly diffuse, the bonding strength will increase, and peeling will become difficult. Note that the holding time is preferably 1 hour or more and 10 hours or less. Annealing for more than 10 hours is very uneconomical, especially considering the vacuum atmosphere.

【0025】以上の製造工程及び条件で得られるTi基
盤ブランクは、その表面粗度は0.07μmRa以上で
、5μmRa以下の優れた平坦度を有し、焼鈍後の剥離
性がよい。
The Ti base blank obtained by the above manufacturing process and conditions has an excellent surface roughness of 0.07 μmRa or more and 5 μmRa or less, and has good releasability after annealing.

【0026】このTi基盤ブランクは高密度記録磁気デ
ィスク用基盤として優れており、研削、研磨により基盤
に仕上げた後にダイレクトスパッタにより磁性膜を形成
してもエラー発生が極めて少ない。
This Ti base blank is excellent as a base for high-density recording magnetic disks, and even if a magnetic film is formed by direct sputtering after finishing the base by grinding and polishing, there will be very few errors.

【0027】次に本発明の実施例を示す。Next, examples of the present invention will be shown.

【0028】[0028]

【実施例1】[Example 1]

【表1】 に示す化学成分の純Ti基盤ブランク(寸法:0.83
mm厚×外径95mm×内径25mm)を常法の製造工
程で得て、このブランクにつき、研削砥石(粒度400
番のPVA砥石(弾性砥石)を使用)により加工した後
[Table 1] Pure Ti base blank (dimensions: 0.83
mm thickness x outer diameter 95 mm x inner diameter 25 mm) by a conventional manufacturing process, and for this blank, a grinding wheel (grain size 400
After processing with a PVA grindstone (elastic grindstone),

【表2】 に示す条件にて真空焼鈍を行った。剥離性及び平坦度等
を調べた結果を表2に併記する。
Vacuum annealing was performed under the conditions shown in Table 2. Table 2 also shows the results of examining the releasability, flatness, etc.

【0029】表2より、本発明例は、いずれも剥離性に
優れ、かつブランクの平坦度も優れることがわかる。一
方、比較例1は加圧力が低いために平坦度が劣っており
、比較例2は加圧力が高すぎて剥離性が劣っている。
From Table 2, it can be seen that all of the examples of the present invention have excellent releasability and blank flatness. On the other hand, in Comparative Example 1, the flatness was poor due to the low pressure, and in Comparative Example 2, the pressure was too high, resulting in poor releasability.

【0030】[0030]

【実施例2】表1に示す化学成分の純Ti基盤ブランク
(寸法は実施例1に同じ)につき、
[Example 2] For a pure Ti base blank (the dimensions are the same as in Example 1) with the chemical components shown in Table 1,

【表3】 に示すようにブランクの表面粗度を種々変えて真空焼鈍
を行った。なお、表面粗度0.02μmRaは3000
番のPVA砥石を、0.08μmRaは800番のPV
A砥石を、また0.15μmRaは400番のPVA砥
石をそれぞれ用いて調整した。剥離性及び平坦度等を調
べた結果を表3に併記する。
As shown in Table 3, the blanks were vacuum annealed with various surface roughness changes. In addition, the surface roughness 0.02μmRa is 3000
PVA grinding wheel of No. 800 is used for 0.08μmRa.
The A grindstone was adjusted, and the 0.15 μm Ra was adjusted using a No. 400 PVA grindstone. The results of examining the peelability, flatness, etc. are also listed in Table 3.

【0031】表3より、本発明例は、いずれも剥離性及
び平坦度に優れていることが明らかである。一方、比較
例3は表面粗度が適切でないために剥離性及び平坦度に
劣っている。
From Table 3, it is clear that all the examples of the present invention are excellent in releasability and flatness. On the other hand, Comparative Example 3 is inferior in releasability and flatness because the surface roughness is not appropriate.

【0032】[0032]

【実施例3】表1に示す化学成分の純Ti基盤(寸法は
実施例1に同じ)につき、研削砥石で研削した後、
[Example 3] After grinding a pure Ti substrate (the dimensions are the same as in Example 1) with the chemical composition shown in Table 1 using a grinding wheel,

【表
4】 に示す条件にてAr雰囲気焼鈍を行った。剥離性及び平
坦度等を調べた結果を表4に併記する。
[Table 4] Ar atmosphere annealing was performed under the conditions shown below. The results of examining peelability, flatness, etc. are also listed in Table 4.

【0033】表4より、剥離性に優れ、かつブランクの
平坦度も優れていることがわかる。
From Table 4, it can be seen that the releasability is excellent and the flatness of the blank is also excellent.

【0034】[0034]

【発明の効果】以上詳述したように、本発明によれば、
純Ti基盤ブランクについて表面を粗面化してコントロ
ールしたうえで真空焼鈍又はAr雰囲気焼鈍を施すので
、真空焼鈍又はAr雰囲気焼鈍後の剥離性がよく、優れ
た平坦度のものが得られる。しかも、平坦度のばらつく
が少ないので高品質である。
[Effects of the Invention] As detailed above, according to the present invention,
Since the pure Ti substrate blank is subjected to vacuum annealing or Ar atmosphere annealing after roughening and controlling the surface, the peelability after vacuum annealing or Ar atmosphere annealing is good, and a product with excellent flatness can be obtained. In addition, there is little variation in flatness, resulting in high quality.

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】  酸素:0.15〜0.4wt%を含み
、不純物として、水素:0.010wt%以下、窒素:
0.05wt%以下、Fe:0.05wt%以下及びそ
の他の不可避的不純物を含むTiからなる純Tiにて構
成される基盤ブランクにおいて、その表面粗度が0.0
7μmRa以上であることを特徴とする真空焼鈍又はA
r雰囲気焼鈍後の剥離性が良く、平坦度の優れる磁気デ
ィスク用Ti基盤ブランク。
[Claim 1] Contains oxygen: 0.15 to 0.4 wt%, hydrogen: 0.010 wt% or less, nitrogen:
In a base blank made of pure Ti, the surface roughness is 0.0.
Vacuum annealing or A characterized by having a temperature of 7 μmRa or more
A Ti-based blank for magnetic disks with good peelability and flatness after annealing in an r atmosphere.
【請求項2】  前記組成を有する純Tiにて構成され
る基盤について、その表面を、粒度800番より粗い砥
粒から構成される研削砥石で加工した後、真空焼鈍又は
Ar雰囲気焼鈍を施すことを特徴とする真空焼鈍又はA
r雰囲気焼鈍後の剥離性が良く、平坦度の優れる磁気デ
ィスク用Ti基盤ブランクの製造方法。
2. The surface of the substrate made of pure Ti having the above composition is processed with a grinding wheel made of abrasive grains with a grain size coarser than No. 800, and then subjected to vacuum annealing or Ar atmosphere annealing. Vacuum annealing or A characterized by
A method for manufacturing a Ti-based blank for magnetic disks that has good releasability and flatness after annealing in an r atmosphere.
【請求項3】  真空焼鈍は、温度が600℃以上70
0℃以下、加圧力が200kg/dm2以上2000k
g/dm2以下で、10−5Torrより高い真空度に
て行う請求項2に記載の方法。
[Claim 3] Vacuum annealing is performed at a temperature of 600°C or higher and 70°C.
0℃ or less, pressure is 200kg/dm2 or more 2000k
3. The method according to claim 2, wherein the method is carried out at a vacuum level of less than g/dm2 and higher than 10@-5 Torr.
【請求項4】  Ar雰囲気焼鈍は、温度が600℃以
上700℃以下、加圧力が200kg/dm2以上20
00kg/dm2以下で行う請求項2に記載の方法。
4. Ar atmosphere annealing is performed at a temperature of 600°C or more and 700°C or less, and a pressure of 200kg/dm2 or more.
3. The method according to claim 2, wherein the method is carried out at a pressure of 00 kg/dm2 or less.
JP2287191A 1991-01-23 1991-01-23 Ti substrate blank and its production Pending JPH04248123A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2287191A JPH04248123A (en) 1991-01-23 1991-01-23 Ti substrate blank and its production

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2287191A JPH04248123A (en) 1991-01-23 1991-01-23 Ti substrate blank and its production

Publications (1)

Publication Number Publication Date
JPH04248123A true JPH04248123A (en) 1992-09-03

Family

ID=12094760

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2287191A Pending JPH04248123A (en) 1991-01-23 1991-01-23 Ti substrate blank and its production

Country Status (1)

Country Link
JP (1) JPH04248123A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5478657A (en) * 1993-06-16 1995-12-26 Nkk Corporation Titanium discs useful for magnetic discs

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5478657A (en) * 1993-06-16 1995-12-26 Nkk Corporation Titanium discs useful for magnetic discs

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