JPH04240185A - Vapor growth device - Google Patents
Vapor growth deviceInfo
- Publication number
- JPH04240185A JPH04240185A JP1598691A JP1598691A JPH04240185A JP H04240185 A JPH04240185 A JP H04240185A JP 1598691 A JP1598691 A JP 1598691A JP 1598691 A JP1598691 A JP 1598691A JP H04240185 A JPH04240185 A JP H04240185A
- Authority
- JP
- Japan
- Prior art keywords
- susceptor
- vapor phase
- phase growth
- disposed
- growth apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002994 raw material Substances 0.000 claims abstract description 11
- 238000001947 vapour-phase growth Methods 0.000 claims description 32
- 230000000903 blocking effect Effects 0.000 claims description 8
- 230000002093 peripheral effect Effects 0.000 claims 1
- 239000007789 gas Substances 0.000 abstract description 38
- 239000000758 substrate Substances 0.000 abstract description 23
- 239000007795 chemical reaction product Substances 0.000 abstract description 9
- 239000010409 thin film Substances 0.000 abstract description 9
- 238000004140 cleaning Methods 0.000 abstract description 6
- 230000008021 deposition Effects 0.000 abstract description 2
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 230000001105 regulatory effect Effects 0.000 abstract 3
- 230000000694 effects Effects 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 238000009825 accumulation Methods 0.000 description 3
- 239000012159 carrier gas Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 230000006698 induction Effects 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
【０００１】0001
【産業上の利用分野】本発明は気相成長装置の改良に関
する。特に、化合物半導体の気相成長装置において、基
板近傍の原料ガスの流れを均一にするために設けられる
整流手段が配設される排気室に反応生成物が堆積し、こ
の堆積物が基板を出し入れするに際して基板上に落下し
て基板上の薄膜に損傷を与えることを防止することを目
的とする改良に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to improvements in vapor phase growth apparatus. In particular, in compound semiconductor vapor phase growth equipment, reaction products are deposited in the exhaust chamber where a rectifier is installed to make the flow of source gas near the substrate uniform, and this deposit is transferred between the substrate and the substrate. The present invention relates to an improvement aimed at preventing damage to the thin film on the substrate due to falling onto the substrate.
【０００２】0002
【従来の技術】気相成長装置は、一般に、加熱した基板
上に原料ガスを含むキャリヤガスを流し、基板上でこれ
らガスを分解し、反応させて基板上に薄膜を形成する装
置である。2. Description of the Related Art A vapor phase growth apparatus is generally an apparatus that flows a carrier gas containing a raw material gas over a heated substrate, decomposes these gases on the substrate, causes them to react, and forms a thin film on the substrate.
【０００３】図４は、従来技術に係る気相成長装置の構
成図（断面図）である。図において、１は、気相成長装
置を構成する筒状の真空容器５の頂部に設けられた原料
ガス供給口である。２は、上記の真空容器５の内部に設
けられたサセプタであり、このサセプタ２の上面に、薄
膜が成長される基板が載置される。１３は上記の真空容
器５の底部の拡大された側面によって構成される排気室
９に配設される整流手段である。この整流手段１３は、
上記の原料ガス供給口１から真空容器５内に導入された
原料ガスを含むキャリヤガスを、上記のサセプタ２上に
載置された基板近傍において均一な流れとなし、基板上
に成長される薄膜の厚さや組成を均一にするためのもの
である。４は上記の整流手段１３を通過したガスを真空
容器５の外部に排出するための排気口である。１０は上
記のサセプタ２上に載置される基板を加熱するための高
周波誘導加熱手段である。１１は上記のサセプタ２を保
持する保持シャフトであり、電動機１２によって駆動さ
れて回転する。この回転によって、上記のサセプタ２上
の基板の近傍におけるガスの流れがより均一となる。図
の矢印はガスの流れ方向を示す。FIG. 4 is a block diagram (cross-sectional view) of a conventional vapor phase growth apparatus. In the figure, reference numeral 1 denotes a source gas supply port provided at the top of a cylindrical vacuum container 5 constituting the vapor phase growth apparatus. Reference numeral 2 denotes a susceptor provided inside the vacuum container 5, and a substrate on which a thin film is to be grown is placed on the upper surface of the susceptor 2. Reference numeral 13 denotes a rectifying means disposed in the exhaust chamber 9 formed by the enlarged side surface of the bottom of the vacuum container 5 mentioned above. This rectifying means 13 is
The carrier gas containing the raw material gas introduced into the vacuum container 5 from the raw material gas supply port 1 is made to flow uniformly in the vicinity of the substrate placed on the susceptor 2, and a thin film is grown on the substrate. This is to make the thickness and composition uniform. 4 is an exhaust port for discharging the gas that has passed through the rectifying means 13 to the outside of the vacuum container 5. 10 is a high frequency induction heating means for heating the substrate placed on the susceptor 2 described above. A holding shaft 11 holds the susceptor 2, and is driven and rotated by an electric motor 12. This rotation makes the flow of gas in the vicinity of the substrate on the susceptor 2 more uniform. The arrows in the figure indicate the direction of gas flow.
【０００４】ところで、従来技術における上記の整流手
段１３は、サセプタ２と同軸的に配置される複数のリン
グ状体をもって構成され、これら複数のリング状体のそ
れぞれには複数の孔が穿孔されている。上記の整流手段
１３の一例として、二重のリング状体の場合を図５に示
す。
図において、１３１ は整流手段１３の内側リング状体
であり、４個の孔が穿孔されており、１３２ は整流手
段１３の外側リング状体であり、２個の孔が穿孔されて
いる。図の矢印は、ガスの流れ方向を示す。また、破線
は上記のサセプタ２の通過領域を示す。図５に示す構成
とサセプタ２の回転とによってサセプタ２の近傍におい
ては、おゝむね均一なガスの流れを実現することができ
る。By the way, the above-mentioned rectifying means 13 in the prior art is constituted by a plurality of ring-shaped bodies disposed coaxially with the susceptor 2, and each of the plurality of ring-shaped bodies is provided with a plurality of holes. There is. As an example of the above-mentioned rectifying means 13, a double ring-shaped body is shown in FIG. In the figure, 131 is an inner ring-shaped body of the rectifying means 13, which has four holes drilled therein, and 132 is an outer ring-shaped body of the rectifying means 13, which has two holes bored therein. Arrows in the figure indicate the direction of gas flow. Further, the broken line indicates the passage area of the susceptor 2 described above. With the configuration shown in FIG. 5 and the rotation of the susceptor 2, a generally uniform gas flow can be realized in the vicinity of the susceptor 2.
【０００５】[0005]
【発明が解決しようとする課題】ところが、従来技術に
係る気相成長装置においては、上記の整流手段が配設さ
れている排気室においてガスの流速が著しく低い領域例
えば図５に一点鎖線をもって囲む領域に、未反応の原料
ガスが分解して堆積したり、反応生成物が堆積したりし
、基板を出し入れする際に、上記の堆積物が基板上に落
下し、基板上に成長した薄膜を損傷する虞があると云う
欠点が存在する。さらに上記の堆積物を除去するための
排気室や整流手段の清掃や洗浄をかなり高頻度に行わな
ければならず作業効率の低下を避けえないと云う欠点が
ある。[Problems to be Solved by the Invention] However, in the vapor phase growth apparatus according to the prior art, in the exhaust chamber in which the above-mentioned rectifying means is installed, there is a region where the gas flow velocity is extremely low, for example, the area surrounded by the dashed line in FIG. Unreacted raw material gas decomposes and accumulates in the area, and reaction products are deposited in the area, and when the substrate is taken in and out, the above deposits fall onto the substrate and destroy the thin film grown on the substrate. The drawback is that there is a risk of damage. Furthermore, there is a disadvantage in that the exhaust chamber and the rectifying means must be cleaned and cleaned quite frequently to remove the above-mentioned deposits, which inevitably reduces work efficiency.
【０００６】本発明の目的は、これらの欠点を解消する
ことにあり、基板近傍のガスの流れの均一性を確保する
と云う整流手段本来の機能を損なうことなく、上記の堆
積物の発生を抑止し、これら堆積物による基板薄膜の損
傷を防止して歩留りの向上を図ることができ、さらに排
気室や整流手段の清掃や洗浄の頻度を大幅に低下して作
業効率の向上を達成することができる気相成長装置を提
供することにある。The purpose of the present invention is to eliminate these drawbacks, and to suppress the generation of the above-mentioned deposits without impairing the original function of the rectifying means, which is to ensure uniformity of gas flow near the substrate. However, it is possible to prevent damage to the substrate thin film due to these deposits and improve yield, and it is also possible to significantly reduce the frequency of cleaning and cleaning of the exhaust chamber and rectifying means, thereby improving work efficiency. The objective is to provide a vapor phase growth apparatus that can achieve this goal.
【０００７】[0007]
【課題を解決するための手段】上記の目的は、頂部に原
料ガス供給口（１）を有し、筒状をなし、その中にサセ
プタ（２）が配設され、底部周面は拡大され、この拡大
された領域に配設される整流手段（３）を介して、排気
口（４）と連通してなる真空容器（５）よりなる気相成
長装置において、前記の整流手段（３）は、流路閉塞部
（６）とこの流路閉塞部（６）を囲んで設けられる狭窄
流路（７）との組よりなり、この整流手段（３）は、サ
セプタ通過領域（２１）を囲んで少なくとも２個配設さ
れている気相成長装置によって達成される。[Means for Solving the Problems] The above object has a cylindrical shape with a raw material gas supply port (1) at the top, a susceptor (2) is disposed in the cylindrical shape, and the bottom circumferential surface is enlarged. In a vapor phase growth apparatus comprising a vacuum container (5) communicating with an exhaust port (4) via a rectifier (3) disposed in this enlarged area, the rectifier (3) is composed of a flow passage blockage part (6) and a narrowed flow passage (7) provided surrounding the flow passage blockage part (6), and this rectification means (3) has a susceptor passage area (21). This is achieved by using at least two vapor phase growth apparatuses arranged surrounding each other.
【０００８】上記の構成において、前記の流路閉塞部（
６）とこの流路閉塞部（６）を囲んで設けられる狭窄流
路（７）との組は４組であり、前記の流路閉塞部（６）
は整流流路を遮る円柱状であり、前記の排気口（４）が
前記の狭窄流路（７）の末端であり、前記の流路閉塞部
（６）を挟んで前記のサセプタ（２）と対向する領域に
設けられていると特に効果は顕著である。[0008] In the above configuration, the flow path blocking portion (
6) and the constricted flow path (7) provided surrounding the flow path obstruction portion (6), there are four pairs, and the aforementioned flow path obstruction portion (6)
has a cylindrical shape that blocks the rectifying flow path, the exhaust port (4) is the end of the narrowed flow path (7), and the susceptor (2) is located across the flow path blocking portion (6). The effect is particularly remarkable when it is provided in an area facing the .
【０００９】また、上記の目的は、頂部に原料ガス供給
口（１）を有し、筒状をなし、その中にサセプタ（２）
が配設され、このサセプタ（２）が配設される領域の下
部にはガス流路狭窄部（８）が設けられ、このガス流路
狭窄部（８）の下部に配設される整流手段（３）を介し
て、排気口（４）と連通してなる真空容器（５）よりな
る気相成長装置において、前記の整流手段（３）は、サ
セプタ通過領域を囲んで、流路閉塞部（６）と狭窄流路
（７）とが交互に配設されている組が少なくとも２個配
設されてなる気相成長装置によっても達成される。[0009] The above object also has a cylindrical shape with a raw material gas supply port (1) at the top, and a susceptor (2) inside it.
is disposed, a gas flow passage narrowing portion (8) is provided below the region where the susceptor (2) is disposed, and a rectifying means disposed below the gas flow passage narrowing portion (8). In a vapor phase growth apparatus consisting of a vacuum container (5) communicating with an exhaust port (4) via (3), the rectifying means (3) surrounds a susceptor passage area and has a flow path blockage part. This can also be achieved by a vapor phase growth apparatus in which at least two sets of (6) and constricted channels (7) are arranged alternately.
【００１０】0010
【作用】つぎに、本発明に係る気相成長装置を得るに至
った本発明者らの思考過程について説明する。本発明者
らは、サセプタ近傍のガスの流れを均一にすると云う整
流手段の本来的機能を達成するためには、整流手段に設
けられるガスの入口は、サセプタ通過領域（サセプタ上
の基板を装置外に取り出すときにサセプタが通過する領
域）を囲んでおおむね等間隔に複数個設けられなければ
ならないと考えた。つぎに、排気室における反応生成物
等の堆積は、排気されるガスの流速が著しく低い領域に
発生しているから、反応生成物等の堆積を防止するには
、ガス流速が著しく低い領域を排除すればよいと考え、
そのために排気経路はガスの流線に沿うように制限すれ
ばよいと考えた。以上の考えにもとづき、整流手段には
、サセプタ通過領域を囲んで、流路閉塞部と狭窄流路と
が交互に配設されている組が少なくとも２個配設される
と云う本発明に係る構成を得た。上記の流路閉塞部と狭
窄流路とが交互に配設されている組の数と効果（一定期
間内に堆積する反応生成物等の堆積量の逆数）との関係
は、実験の結果によれば、上記の組の数が４組までは組
数とともに効果は上昇し、４組以上では効果はおおむね
飽和することが判明した。[Operation] Next, the thinking process of the present inventors that led to the creation of the vapor phase growth apparatus according to the present invention will be explained. The present inventors believe that in order to achieve the original function of the rectifying means, which is to make the flow of gas near the susceptor uniform, the gas inlet provided in the rectifying means must be connected to the susceptor passing area (the substrate on the susceptor is It was thought that a plurality of susceptors should be provided at approximately equal intervals surrounding the area through which the susceptor passes when taken out. Next, the accumulation of reaction products, etc. in the exhaust chamber occurs in areas where the flow rate of the exhausted gas is extremely low, so in order to prevent the accumulation of reaction products, etc., the area where the gas flow rate is extremely low is I thought it would be better to eliminate it,
For this reason, we thought it would be best to restrict the exhaust route to follow the gas streamlines. Based on the above idea, the present invention is characterized in that the flow rectifying means is provided with at least two sets in which flow passage blocking portions and narrowed flow passages are alternately arranged surrounding the susceptor passage area. Got the configuration. The relationship between the number of sets in which the passage blockages and constricted passages are arranged alternately and the effect (the reciprocal of the amount of reaction products etc. deposited within a certain period of time) is determined by the experimental results. According to the research, it was found that the effect increases with the number of pairs until the number of pairs is 4, and that the effect is almost saturated when the number of pairs is 4 or more.
【００１１】[0011]
【実施例】以下、図面を参照して、本発明の二つの実施
例に係る気相成長装置について説明する。Embodiments Hereinafter, vapor phase growth apparatuses according to two embodiments of the present invention will be described with reference to the drawings.
【００１２】第１実施例は請求項１または２に対応する
実施例である。The first embodiment corresponds to claim 1 or 2.
【００１３】図１は第１実施例に係る気相成長装置の構
成図（断面図）である。図において、３は本発明の要旨
に係る整流手段である。この整流手段３を除く他の記号
の説明は前述の従来技術に係る気相成長装置の場合と同
一であるので省略する。FIG. 1 is a block diagram (cross-sectional view) of a vapor phase growth apparatus according to a first embodiment. In the figure, 3 is a rectifying means according to the gist of the present invention. The explanations of the symbols other than the rectifying means 3 are the same as those of the prior art vapor phase growth apparatus described above, and will therefore be omitted.
【００１４】図２に本発明の要旨に係る整流手段３の一
例の平面図（図１のＡ−Ａ断面図）を示す。図において
、６は、整流手段３においてガスの流速が著しく低くな
ると考えられる領域を排除するための流路閉塞部であり
、７は、この流路閉塞部６によって狭隘にされ、おおむ
ねガスの流線に沿った形状をなす狭窄流路である。上記
の流路閉塞部６と上記の狭窄流路７とが交互に配設され
てなる組が少なくとも２個、本実施例の場合４組配設さ
れる。４は上記の狭窄流路７の末端にある排気口であり
、本実施例の場合４個である。図に示す矢印はガスの流
れ方向を示し、また、破線をもって囲む領域２１はサセ
プタの通過領域を示す。FIG. 2 shows a plan view (cross-sectional view taken along the line AA in FIG. 1) of an example of the rectifying means 3 according to the gist of the present invention. In the figure, 6 is a flow passage blockage part for eliminating a region in which the gas flow velocity is considered to be extremely low in the rectifying means 3, and 7 is a passage blockage part 6 that is narrowed by this flow passage blockage part 6 and generally restricts the gas flow. This is a constricted channel shaped along a line. At least two sets, and in the case of this embodiment, four sets, are provided in which the flow path closing portions 6 and the narrowed flow paths 7 are alternately arranged. Reference numeral 4 indicates exhaust ports at the ends of the narrowed flow path 7, and in this embodiment, there are four exhaust ports. The arrows shown in the figure indicate the gas flow direction, and the area 21 surrounded by a broken line indicates the passage area of the susceptor.
【００１５】上記の構成の整流手段３を有する本発明に
係る気相成長装置を使用して、原料ガスとしてトリメチ
ルガリウムを毎分２０ｃｃ、アルシンを毎分２０ｃｃ、
キャリアガスとして水素ガスを毎分５ｌ、気相成長装置
内に供給して、７５０℃に加熱した直径２インチの基板
上にガリウムヒ素の薄膜を成長させた結果、膜厚の誤差
は±５％以内にあり、均一性がおおむね確保されること
が確認された。さらに、本発明に係る気相成長装置の整
流手段の清掃頻度は従来技術に係る気相成長装置の場合
の約１／４で十分であることが確認でき、反応生成物等
の堆積量が激減することが確認された。Using the vapor phase growth apparatus according to the present invention having the rectifying means 3 having the above configuration, trimethyl gallium is fed as raw material gas at 20 cc/min, arsine is fed at 20 cc/min,
A thin film of gallium arsenide was grown on a 2-inch diameter substrate heated to 750°C by supplying 5 liters of hydrogen gas per minute as a carrier gas into a vapor phase growth apparatus, resulting in a film thickness error of ±5%. It was confirmed that uniformity was generally ensured. Furthermore, it was confirmed that the cleaning frequency of the rectifying means of the vapor phase growth apparatus according to the present invention is approximately 1/4 of that of the conventional vapor phase growth apparatus, and the amount of deposited reaction products etc. is drastically reduced. It was confirmed that
【００１６】第２実施例は請求項３に対応する実施例で
ある。The second embodiment is an embodiment corresponding to claim 3.
【００１７】図３は第２実施例に係る気相成長装置の構
成図（断面図）である。図において、８はサセプタ２が
配設される領域の下部に設けられるガス流路狭窄部であ
り、上記のサセプタ２が通過可能とされている。上記の
ガス流路狭窄部８の下部に整流手段３が配設されており
、ガスは図に矢印をもって示す方向に流れ、排気される
。上記のガス流路狭窄部８以外の記号の説明は第１実施
例の場合と同一であり、本発明の要旨に係る整流手段３
の構成と機能も第１実施例の場合と同一であるので説明
を省略する。FIG. 3 is a block diagram (cross-sectional view) of a vapor phase growth apparatus according to a second embodiment. In the figure, reference numeral 8 denotes a gas flow passage narrowing portion provided below the area where the susceptor 2 is disposed, through which the susceptor 2 described above can pass. A rectifying means 3 is disposed below the gas passage narrowing portion 8, and the gas flows in the direction indicated by the arrow in the figure and is exhausted. The explanations of the symbols other than the gas flow path narrowing part 8 are the same as in the first embodiment, and the rectifying means 3 according to the gist of the present invention is the same as in the first embodiment.
The configuration and functions of the second embodiment are also the same as those of the first embodiment, so the explanation thereof will be omitted.
【００１８】本実施例に係る気相成長装置においても、
整流手段３による効果すなわちサセプタ近傍のガスの流
れの均一化および反応生成物等の堆積の抑制効果は、お
おむね第１実施例の場合と同等である。[0018] Also in the vapor phase growth apparatus according to this embodiment,
The effect of the rectifying means 3, that is, the effect of uniformizing the flow of gas in the vicinity of the susceptor and suppressing the deposition of reaction products, etc., is approximately the same as that of the first embodiment.
【００１９】[0019]
【発明の効果】以上説明したとおり、本発明に係る気相
成長装置においては、整流手段が、サセプタ通過領域を
囲んで流路閉塞部と狭窄流路とが交互に配設されてなる
組が少なくとも２組配設される構成であるので、サセプ
タ近傍のガスの流れが均一にされ、しかも整流手段にお
けるガスの流速が著しく低い領域が排除されるから整流
手段における反応生成物等の堆積が効果的に防止される
。また、上記の流路閉塞部と狭窄流路とが交互に配設さ
れてなる組が４組であり、上記の流路閉塞部の平面図が
円形であり、排気口が上記の狭窄流路の末端であり、流
路閉塞部を挟んでサセプタと対向する領域に設けられて
いる場合、上記の効果は特に顕著である。[Effects of the Invention] As explained above, in the vapor phase growth apparatus according to the present invention, the rectifying means includes a set of flow passage blocking parts and narrowed flow passages arranged alternately surrounding the susceptor passage area. Since the configuration includes at least two sets, the flow of gas near the susceptor is made uniform, and an area where the gas flow velocity in the rectifier is extremely low is eliminated, which is effective in reducing the accumulation of reaction products, etc. in the rectifier. is prevented. Further, there are four sets in which the above-mentioned flow passage blockage portions and the narrowed flow passages are arranged alternately, the plan view of the above-mentioned flow passage blockage portions is circular, and the exhaust port is arranged in the narrowed flow passages. The above effect is particularly remarkable when the susceptor is disposed at the end of the susceptor and faces the susceptor across the flow path blockage.
【００２０】したがって、本発明は基板上の薄膜の厚さ
や組成が均一化され、品質の向上を図ることができると
ともに、整流手段等の清浄や洗浄の頻度を大幅に低下し
て作業効率の向上を図ることができる気相成長装置を提
供することができる。Therefore, according to the present invention, the thickness and composition of the thin film on the substrate can be made uniform, and quality can be improved. At the same time, the frequency of cleaning and cleaning of the rectifying means etc. can be significantly reduced, and work efficiency can be improved. It is possible to provide a vapor phase growth apparatus that can achieve the following.
【図１】本発明の第１実施例に係る気相成長装置の構成
図（断面図）である。FIG. 1 is a configuration diagram (cross-sectional view) of a vapor phase growth apparatus according to a first embodiment of the present invention.
【図２】本発明に係る気相成長装置の整流手段の平面図
（図１のＡ−Ａ断面図）である。FIG. 2 is a plan view (cross-sectional view taken along the line AA in FIG. 1) of the rectifying means of the vapor growth apparatus according to the present invention.
【図３】本発明の第２実施例に係る気相成長装置の構成
図（断面図）である。FIG. 3 is a configuration diagram (cross-sectional view) of a vapor phase growth apparatus according to a second embodiment of the present invention.
【図４】従来技術に係る気相成長装置の構成図（断面図
）である。FIG. 4 is a configuration diagram (cross-sectional view) of a vapor phase growth apparatus according to the prior art.
【図５】従来技術に係る気相成長装置の整流手段の平面
図である。FIG. 5 is a plan view of a rectifying means of a vapor phase growth apparatus according to the prior art.
１ 原料ガス供給口 ２ サセプタ ３ 整流手段（本発明） ４ 排気口 ５ 真空容器 ６ 流路閉塞部 ７ 狭窄流路 ８ ガス流路狭窄部 ９ 排気室 １０ 高周波誘導加熱手段 １１ 保持シャフト １２ 電動機 １３ 整流手段（従来技術） 1 Raw material gas supply port 2 Susceptor 3. Rectifying means (present invention) 4 Exhaust port 5 Vacuum container 6 Flow path blockage part 7 Narrowed flow path 8 Gas flow path narrowing part 9 Exhaust chamber 10 High frequency induction heating means 11 Holding shaft 12 Electric motor 13. Rectification means (prior art)
Claims (3)
筒状をなし、その中にサセプタ（２）が配設され、底部
周面は拡大され、該拡大された領域に配設される整流手
段（３）を介して、排気口（４）と連通してなる真空容
器（５）よりなる気相成長装置において、前記整流手段
（３）は、流路閉塞部（６）と該流路閉塞部（６）を囲
んで設けられる狭窄流路（７）との組よりなり、該整流
手段（３）は、サセプタ通過領域（２１）を囲んで少な
くとも２個配設されてなることを特徴とする気相成長装
置。[Claim 1] Having a raw material gas supply port (1) at the top,
It has a cylindrical shape, a susceptor (2) is disposed therein, the bottom peripheral surface is enlarged, and it communicates with the exhaust port (4) through a rectifier (3) disposed in the enlarged area. In the vapor phase growth apparatus including a vacuum container (5), the rectifying means (3) includes a flow path closing portion (6) and a narrowed flow path (7) provided surrounding the flow path obstruction portion (6). ), and at least two of the rectifying means (3) are arranged surrounding a susceptor passage region (21).
（６）を囲んで設けられる狭窄流路（７）との組は４組
であり、前記流路閉塞部（６）は整流流路を遮る円柱状
であり、前記排気口（４）が前記狭窄流路（７）の末端
であり、前記流路閉塞部（６）を挟んで前記サセプタ（
２）と対向する領域に設けられてなることを特徴とする
請求項１記載の気相成長装置。2. There are four sets of the channel blocking portion (6) and the narrowed channel (7) provided surrounding the channel blocking portion (6), and the channel blocking portion (6) has a cylindrical shape that blocks the rectification flow path, the exhaust port (4) is the end of the narrowed flow path (7), and the susceptor (
2. The vapor phase growth apparatus according to claim 1, wherein the vapor phase growth apparatus is provided in a region opposite to 2).
筒状をなし、その中にサセプタ（２）が配設され、該サ
セプタ（２）が配設される領域の下部にはガス流路狭窄
部（８）が設けられ、該ガス流路狭窄部（８）の下部に
配設される整流手段（３）を介して、排気口（４）と連
通してなる真空容器（５）よりなる気相成長装置におい
て、前記整流手段（３）は、サセプタ通過領域（２１）
を囲んで、流路閉塞部（６）と狭窄流路（７）とが交互
に配設されてなる組が少なくとも２個配設されてなるこ
とを特徴とする気相成長装置。[Claim 3] Having a raw material gas supply port (1) at the top,
It has a cylindrical shape, in which a susceptor (2) is disposed, and a gas flow passage narrowing part (8) is provided at the lower part of the region where the susceptor (2) is disposed, and the gas flow passage narrowing part (8) In a vapor phase growth apparatus comprising a vacuum container (5) communicating with an exhaust port (4) via a rectifying means (3) disposed at the lower part of the chamber, the rectifying means (3) comprises: Susceptor passage area (21)
1. A vapor phase growth apparatus characterized in that at least two sets are provided in which passage blocking portions (6) and narrowed passages (7) are alternately arranged surrounding the passageway.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1598691A JPH04240185A (en) | 1991-01-14 | 1991-01-14 | Vapor growth device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1598691A JPH04240185A (en) | 1991-01-14 | 1991-01-14 | Vapor growth device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04240185A true JPH04240185A (en) | 1992-08-27 |
Family
ID=11903991
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1598691A Pending JPH04240185A (en) | 1991-01-14 | 1991-01-14 | Vapor growth device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04240185A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0714782A (en) * | 1993-06-25 | 1995-01-17 | Nec Corp | Semiconductor production equipment |
| US5564643A (en) * | 1993-03-10 | 1996-10-15 | Fuji Photo Film Co., Ltd. | Photo film cassette having a film trailer attaching assembly |
| JP2006261330A (en) * | 2005-03-16 | 2006-09-28 | Furukawa Co Ltd | Growing chamber structure of vapor phase growing device |
| US20120024479A1 (en) * | 2010-07-30 | 2012-02-02 | Applied Materials, Inc. | Apparatus for controlling the flow of a gas in a process chamber |
-
1991
- 1991-01-14 JP JP1598691A patent/JPH04240185A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5564643A (en) * | 1993-03-10 | 1996-10-15 | Fuji Photo Film Co., Ltd. | Photo film cassette having a film trailer attaching assembly |
| JPH0714782A (en) * | 1993-06-25 | 1995-01-17 | Nec Corp | Semiconductor production equipment |
| JP2006261330A (en) * | 2005-03-16 | 2006-09-28 | Furukawa Co Ltd | Growing chamber structure of vapor phase growing device |
| JP4554407B2 (en) * | 2005-03-16 | 2010-09-29 | 古河機械金属株式会社 | Growth chamber structure of vapor phase growth equipment |
| US20120024479A1 (en) * | 2010-07-30 | 2012-02-02 | Applied Materials, Inc. | Apparatus for controlling the flow of a gas in a process chamber |
| US9443753B2 (en) * | 2010-07-30 | 2016-09-13 | Applied Materials, Inc. | Apparatus for controlling the flow of a gas in a process chamber |
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