JPH04186244A - Photomask and exposure - Google Patents
Photomask and exposureInfo
- Publication number
- JPH04186244A JPH04186244A JP2314148A JP31414890A JPH04186244A JP H04186244 A JPH04186244 A JP H04186244A JP 2314148 A JP2314148 A JP 2314148A JP 31414890 A JP31414890 A JP 31414890A JP H04186244 A JPH04186244 A JP H04186244A
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- transparent
- parts
- shielding
- shielding part
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005540 biological transmission Effects 0.000 claims abstract description 4
- 239000000758 substrate Substances 0.000 claims description 29
- 238000000034 method Methods 0.000 claims description 28
- 238000000354 decomposition reaction Methods 0.000 claims description 18
- 230000001678 irradiating effect Effects 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 239000011651 chromium Substances 0.000 description 16
- 230000010363 phase shift Effects 0.000 description 8
- 230000007547 defect Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 241000257465 Echinoidea Species 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野コ
本発明は半導体素子や液晶素子等を製造するために用い
られるフォトマスク及び該フォトマスクに形成されたパ
ターンを感応基板（ウェハ）上に転写する露光方法に関
するものである。Detailed Description of the Invention [Industrial Field of Application] The present invention relates to a photomask used for manufacturing semiconductor devices, liquid crystal devices, etc., and a method for transferring a pattern formed on the photomask onto a sensitive substrate (wafer). The invention relates to an exposure method.
［従来の技術］
半導体素子の製造においては年々徹細化と高集積化が進
み、増々線幅の細いリングラフィ工程か要求されてきて
いる。[Prior Art] In the manufacture of semiconductor devices, the finer details and higher integration are progressing year by year, and a phosphorography process with increasingly narrower line widths is required.
従来、微細なパターンを高いコントラストで基板上に転
写する方法として、例えば特公昭６２−５０８１１号公
報に開示されているように、空間周波数変調型の位相シ
フト法を用いること、およびパターン分割露光を行なう
ことが提案されていた。Conventionally, methods for transferring fine patterns onto a substrate with high contrast include using a spatial frequency modulation type phase shift method and pattern division exposure, as disclosed in Japanese Patent Publication No. 62-50811, for example. It was proposed to do so.
［発明が解決しようとする課題］
空間周波数変調型の位相シフト法では、透過部と遮蔽部
とで形成された所定のパターンを転写するに当って、遮
蔽部を挟む両側の透過部の少なくとも一方に位相部材（
誂電体１Ｉｉ）を設け、この両側の透過部に位相差を生
じさせて、解像度を高めたものである。[Problems to be Solved by the Invention] In the spatial frequency modulation type phase shift method, when transferring a predetermined pattern formed by a transmitting part and a shielding part, at least one of the transmitting parts on both sides of the shielding part is transferred. phase member (
An electric conductor 1Ii) is provided, and a phase difference is created between the transparent parts on both sides of the electric body 1Ii), thereby increasing the resolution.
この方法を、透過部Ｇと遮蔽部Ｃｒが交互に繰り返され
たラインアンドスペースパターンに通用する場合を第４
図（ａ）に示した。同図でπと記入されているパターン
が、位相部材を設けた透過部である。また図の点線部分
は、位相部材の周縁部（以下、エツジと呼ぶ）であり、
この場合エツジは遮蔽部Ｃｒ上にある。The fourth example shows the case where this method is applicable to a line-and-space pattern in which transmitting portions G and shielding portions Cr are alternately repeated.
It is shown in Figure (a). In the same figure, the pattern marked with π is a transmission section provided with a phase member. Also, the dotted line part in the figure is the peripheral edge (hereinafter referred to as edge) of the phase member,
In this case, the edge is on the shielding part Cr.
ところが、第４図（ｂ）のように周囲を透過部Ｇで囲ま
れた遮蔽ｆｌｉｓｃｒの場合には、透過部Ｇ上に位相部
材のエツジができてしまう、この部分を実線で示した。However, in the case of a shielding fliscr surrounded by a transparent part G as shown in FIG. 4(b), an edge of the phase member is formed on the transparent part G, and this part is shown by a solid line.
そして、このエツジ部分では、両側の位相が反転してい
るため、本来露光されるべき位置であるにもかかわらず
、光の強度が０となってしまう。そのため、たとえばポ
ジレジストを使用して、基板に転写した場合には、第４
図（ｃ）で示すように、第４図（ｂ）に示した遮蔽部Ｃ
ｒに対応したレジストパターン（凸部）Ｒとともに、ス
ペースパターンＳ上に不要なレジストパターンＥが残っ
てしまうという現象がおきていた。In this edge portion, since the phases on both sides are reversed, the intensity of the light becomes 0 even though this is the position that should originally be exposed. Therefore, for example, if a positive resist is used and transferred to a substrate, the fourth
As shown in FIG. 4(c), the shielding part C shown in FIG. 4(b)
A phenomenon has occurred in which an unnecessary resist pattern E remains on the space pattern S together with the resist pattern (convex portion) R corresponding to r.
一方、パターン分割露光はパターンの密度等に応じてパ
ターンをいくつかに分解するものである。例えば隣接す
る透過部をそれぞれ別のフォトマスクに設けるなどして
、１枚のフォトマスク中の透過部の密度を低下させるこ
とで、コントラストを向上させることができる。しかし
ながら本方法を用いても、像のコントラストの向上は周
波数変調型の位相シフト法には及ばなかった。On the other hand, in pattern division exposure, a pattern is divided into several parts depending on the pattern density and the like. For example, the contrast can be improved by lowering the density of the transparent portions in one photomask by providing adjacent transparent portions in separate photomasks. However, even when this method was used, the improvement in image contrast was not as good as the frequency modulation type phase shift method.
本発明は、これらの問題点に鑑みてなされたもので、全
てのパターンに対して周波数変調型の位相シフト法を用
いて像のコントラストを向上させ得るようにすることを
目的とする。The present invention has been made in view of these problems, and it is an object of the present invention to improve the contrast of images by using a frequency modulation type phase shift method for all patterns.
［課題を解決するための手段］
本発明では、上記目的を達成するために、以下のような
構成とした。[Means for Solving the Problems] In order to achieve the above object, the present invention has the following configuration.
本発明のフォトマスクは、所定のエネルギー線に対して
ほぼ透明な基板上に該エネルギー線に対する透過部と遮
蔽部とにより幾何学的なパターンが形成され、該パター
ンを感応基板へ転写するために使われるフォトマスクで
あって、前記感応基板上に形成すべき全体パターンが、
パターンの局所的な形状もしくは密度に応じて、全体パ
ターンの透過部及び遮蔽部の一部分に対応する透明部及
び遮光部を有する複数のパターンに分解されて形成され
ているとともに（以下、わかりやすくするため分解パタ
ーンにおいては遮蔽部に対応して遮光部、透過部に対応
して透明部と記す）、該分解パターンの遮光部を挟む両
側の透明部の少なくとも一方に、透過光の位相を変化さ
せる位相部材が設けられ、かつ、前記複数の分解パター
ンの各々は、前記全体パターンの透過部の一部分に対応
する透明部の周辺を囲む遮光部を有するとともに、前記
分解パターンの遮光部の対向した２つのエツジ部が互い
に異なる透明部に隣接して形成されたものである。In the photomask of the present invention, a geometric pattern is formed on a substrate that is substantially transparent to a predetermined energy ray by a transmitting part and a shielding part for the energy ray, and the pattern is transferred to a sensitive substrate. The photomask used is such that the overall pattern to be formed on the sensitive substrate is
Depending on the local shape or density of the pattern, it is divided into a plurality of patterns each having a transparent part and a light shielding part corresponding to a part of the transmitting part and shielding part of the overall pattern. Therefore, in the decomposition pattern, the shielding part is referred to as a light-shielding part, and the transmitting part is referred to as a transparent part), and the phase of transmitted light is changed in at least one of the transparent parts on both sides of the decomposition pattern that sandwich the light-shielding part. A phase member is provided, and each of the plurality of decomposition patterns has a light shielding part surrounding a transparent part corresponding to a part of the transmitting part of the overall pattern, and two opposite light shielding parts of the decomposition pattern are provided. Two edge portions are formed adjacent to different transparent portions.
また本発明の請求項２の露光方法は、所定のエネルギー
線に対してほぼ透明な基板上に該エネルギー線に対する
透過部と遮蔽部とからなる幾何学的なパターンが形成さ
れたフォトマスクを介して、前記エネルギー線を照射す
ることにより感応基板を露光する方法であって、前記感
応基板上に形成すべき全体パターンの局所的な形状もし
くは密度に基いて、前記全体パターンを、次の（１）、
（２）の条件を満たすように複数のパターンにまず分解
する。Further, the exposure method according to claim 2 of the present invention includes using a photomask in which a geometric pattern consisting of a transmitting part and a shielding part for a predetermined energy ray is formed on a substrate that is substantially transparent to the predetermined energy ray. A method of exposing a sensitive substrate by irradiating the energy beam, wherein the overall pattern is formed into the following (1) based on the local shape or density of the overall pattern to be formed on the sensitive substrate. ),
First, it is decomposed into a plurality of patterns so as to satisfy the condition (2).
■前記複数の分解パターンの各々は、前記全体パターン
の透過部の一部分に対応する透明部の周辺を囲む遮光部
を有する。(2) Each of the plurality of decomposition patterns has a light shielding part surrounding a transparent part corresponding to a part of the transmitting part of the whole pattern.
■前記複数の分解パターンの各々は、前記全体パターン
の遮蔽部の一部分に対応する遮光部の対向した２つのエ
ツジ部が互いに異なる透明部に隣接する。(2) Each of the plurality of decomposition patterns is adjacent to a transparent portion in which two opposing edge portions of the light shielding portion corresponding to a portion of the shielding portion of the overall pattern are different from each other.
次いで、前記複数の分解パターンの各々をフォトマスク
に形成するとともに、該分解パターンの遮光部を挟む両
側の透明部の少なくとも一方に透過光の位相を変化させ
る位相部材を設け、しかる後、前記複数の分解パターン
の各々を前記感応基板上に順次位置合わせして重ね合わ
せ露光するものである。Next, each of the plurality of decomposition patterns is formed on a photomask, and a phase member that changes the phase of transmitted light is provided on at least one of the transparent parts on both sides of the light shielding part of the decomposition pattern. Each of the decomposition patterns is sequentially aligned on the sensitive substrate and exposed in a superimposed manner.
さらに、本発明の請求項３の露光方法は、所定のエネル
ギー線に対してほぼ透明な基板上に該エネルギー線に対
する透過部と遮蔽部とからなる幾何学的なパターンが形
成されたフォトマスクを介して、前記エネルギー線を照
射することにより感応基板を露光する方法であって、前
記パターンの遮蔽部を挟む両側の透過部の少なくとも一
方に透過光の位相を変化させる位相部材を設けて前記パ
ターンを露光するとともに、前記パターンの透過部上に
おける前記位相部材のエツジ部に対応する透過部を有す
るフォトマスクを介して、前記エツジ部を再露光するも
のである。Furthermore, the exposure method according to claim 3 of the present invention uses a photomask in which a geometric pattern consisting of a transmitting part and a shielding part for a predetermined energy ray is formed on a substrate that is substantially transparent to the predetermined energy ray. A method for exposing a sensitive substrate by irradiating the energy beam through the pattern, the method comprising: providing a phase member for changing the phase of transmitted light in at least one of the transmitting parts on both sides of the pattern, sandwiching the shielding part; At the same time, the edge portion is re-exposed through a photomask having a transparent portion corresponding to the edge portion of the phase member on the transparent portion of the pattern.
［作 用］
本発明の請求項１のフォトマスク及び請求項２の露光方
法では、最終的に感応基板上に形成すべき全体パターン
は、パターンの局所的な形状もしくは密度に応じて、複
数のパターンに分解されている。ここで、分解された各
パターン内では透明部の周辺は遮光部で囲まれており、
かつ遮光部の対向した２つのエツジ部が互いに異なる透
明部に隣接するように形成されている（なお、本明細書
では、全体パターンと分解パターンとを区別しやすくす
るため、分解パターンにおける遮蔽部、透過部はそれぞ
れ遮光部、透明部と呼ぶこととした）。[Function] In the photomask according to claim 1 and the exposure method according to claim 2 of the present invention, the entire pattern to be finally formed on the sensitive substrate is formed by forming a plurality of patterns depending on the local shape or density of the pattern. broken down into patterns. Here, in each decomposed pattern, the transparent part is surrounded by a light-shielding part,
In addition, the two opposing edges of the light shielding part are formed adjacent to different transparent parts (in order to make it easier to distinguish between the overall pattern and the decomposed pattern, in this specification, the shielding part in the decomposed pattern is , the transmissive part is called the light-shielding part and the transparent part, respectively).
上記のような条件で分解された場合には、透明部に設け
られた位相部材の全てのエツジ部は透明部でな（、遮光
部上に存在するようになる。従って、基板上にエツジ部
分のレジストが残るという現象を防ぐことができる。When disassembled under the above conditions, all the edge parts of the phase member provided on the transparent part are not transparent parts (they are present on the light-shielding part. Therefore, there are no edge parts on the substrate. This can prevent the phenomenon of resist remaining.
こわら分解したそれぞれのパターンは、別々のマスクに
設けるが、あるいは、−枚のマスク上に複数の同一サイ
ズのパターン領域を設け、分解した各パターンを各パタ
ーン領域内に設けるようにすればよい、そして前述のよ
うに、それぞれが所定の位置に重なるように露光を行な
うことによリ、所定のパターンを基板上に転写すること
がてきる。Each of the decomposed patterns may be provided on a separate mask, or alternatively, a plurality of pattern areas of the same size may be provided on two masks, and each decomposed pattern may be provided within each pattern area. , and as described above, by performing exposure so that they overlap at predetermined positions, a predetermined pattern can be transferred onto the substrate.
また、本発明の請求項３の露光方法では、位相部材のエ
ツジ部分のうち透過部上にあって光量が０になるところ
に、マスクの別部分、ないし別のマスクを用いて、再度
露光を行なうものである。In addition, in the exposure method according to claim 3 of the present invention, a part of the edge part of the phase member that is on the transparent part and where the light quantity becomes 0 is exposed again using another part of the mask or another mask. It is something to do.
このようにすれば、エツジ部分に十分な光量を与えるこ
とができるので、所定のパターンを基板状に転写できる
。In this way, a sufficient amount of light can be applied to the edge portion, so that a predetermined pattern can be transferred onto the substrate.
したがって、従来の単純な位相シフトレチクルでは位相
部材のエツジが転写されてしまうようなパターンであっ
ても、位相部材のエツジ部分がガラス部分にかからない
ようにガラス部分を分割して露光すること、ないし位相
部材のエツジ部に再度露光を行なうことにより、位相部
材のエツジの跡を残さずにレジストパターンを得ること
ができる。Therefore, even if the pattern is such that the edge of the phase member would be transferred using a conventional simple phase shift reticle, it is necessary to divide the glass part and expose it so that the edge part of the phase member does not cover the glass part. By exposing the edge portion of the phase member again, a resist pattern can be obtained without leaving traces of the edge of the phase member.
［実施例］
（第１実施例）
％ｌ実施例は、本発明を格子状のパターンに通用した例
である。[Example] (First Example) The %l example is an example in which the present invention was applied to a grid pattern.
第１図（ａ） はウニ八に転写すべきパターンか形成さ
れたフォトマスクの一例を示す図である。第１図（ａ）
に示すようにマスク基板（石英等のカラス基板）Ｍには
、遮光−１！ＦＬＳＴで囲まれたパターン領域ＰＡ内に
、所定波長の光ビーム（例えば、ｉ線、ＫｒＦエキシマ
レーザ等）に対する透過部（マスク裸面部）Ｇと遮蔽部
（クロム等）Ｃｒとにより格子状のマスクパターンＲＰ
が形成されている。FIG. 1(a) is a diagram showing an example of a photomask on which a pattern to be transferred to a sea urchin is formed. Figure 1(a)
As shown in the figure, the mask substrate (glass substrate such as quartz) M has a light shielding of -1! In the pattern area PA surrounded by the FLST, a lattice-shaped mask is formed by a transmitting part (bare surface part of the mask) G and a shielding part (chromium, etc.) Cr for a light beam of a predetermined wavelength (for example, i-line, KrF excimer laser, etc.). Pattern RP
is formed.
第１図（ａ）て示した目的とするパターンＲＰにおいて
は、同図で縦方向の透過部Ｇと横方向の透過部Ｇとが連
なっており、遮蔽部Ｃｒが透過部Ｇに囲まれるような構
成のパターンであるため、従来の位相シフト法を用いた
場合には以下に詳述するようにパターン欠陥が生じる。In the target pattern RP shown in FIG. 1(a), the vertical transparent part G and the horizontal transparent part G are connected, and the shielding part Cr is surrounded by the transparent part G. Since the pattern has a similar structure, if the conventional phase shift method is used, pattern defects will occur as described in detail below.
すなわち、本実施例のパターンＲＰに対して最も効果的
に周波数変調が行えるように、透過光の位相を、例えば
πだけ変化させる膜厚の位相部材（話電体服）を設けた
場合、第１図（ｂ）のようになる。第１図（ｂ）におい
てＨて示した部分が、位相部材πか設けられている透明
部である。同図かられかるように、このパターンでは透
過部（マスク裸面部）Ｇ上に位相部材πのエツジがある
ので、パターンをポジレジスト上に露光し、現像処理を
施した場合には、第１図（Ｃ）のように遮蔽部Ｃｒに対
応したレジストパターン（凸部）Ｒとともに、位相部材
πのエツジに対応してレジストが残る。すなわち、スペ
ースパターン（凹部）Ｓ上に、細いレジストパターン（
凸部）Ｅができてしまう。That is, if a phase member (telephone body suit) having a film thickness that changes the phase of transmitted light by, for example, π is provided so that frequency modulation can be performed most effectively with respect to the pattern RP of this example, The result will be as shown in Figure 1 (b). The part indicated by H in FIG. 1(b) is the transparent part where the phase member π is provided. As can be seen from the figure, in this pattern, there is an edge of the phase member π on the transparent part (bare surface part of the mask) G, so when the pattern is exposed on a positive resist and developed, the first As shown in Figure (C), along with the resist pattern (convex portion) R corresponding to the shielding portion Cr, resist remains corresponding to the edge of the phase member π. That is, a thin resist pattern (
Convex portion) E is formed.
そこで、第１図（ｄ） 、 （ｅ） に示すように、
格子パターン（第１図（ａ）に示した本発明の全体パタ
ーン）ＲＰを、横方向のパターンＲＰＩ と縦方向のパ
ターンＲＰ２とに分解し、それぞれの透明部に１つおき
に位相部材を設けた。これら分解パターンＲＰＩ 、Ｒ
Ｐ２は、それぞれ遮光部Ｃｒ、、Ｃｒ２ と透過部とが
交互に繰り返して配置されており、各透明部のうち、位
相部材πを設けた透明部をＨｌ、Ｈ２、位相部材のない
透明部をＧＩ。Therefore, as shown in Figure 1(d) and (e),
The grid pattern (the overall pattern of the present invention shown in FIG. 1(a)) is divided into a horizontal pattern RPI and a vertical pattern RP2, and a phase member is provided every other transparent part of each. Ta. These decomposition patterns RPI, R
In P2, light-shielding parts Cr, Cr2 and transmitting parts are arranged alternately, and among each transparent part, the transparent part with the phase member π is called Hl, the transparent part with the phase member π is called H1, the transparent part without the phase member is called H1, and the transparent part without the phase member is called P2. G.I.
Ｇ２として示した。同図かられかるように、ここで、分
解パターンＲＰＩ 、ＲＰ２の各々は、第１図（ａ）
に示した全体パターンＲＰを成す透過部Ｇの一部分に対
応した透明部Ｇ、、Ｇ、の周辺を囲む遮光部Ｃｒ、 、
Ｃｒ２ （但し、第１図（ｄ）、（ｅ）には図示してい
ないが、ここでは遮光部としてパターン領域ＰＡを囲む
遮光ｆＬＳＴも含むものとする）を有するとともに、全
体パターンＲＰを成す遮蔽部Ｃｒの一部分に対応した各
遮光部Ｃｒｙ、Ｃｒ２の対向した２つのエツジ部が互い
に異なる透明部Ｇ１又はＨ，、Ｇ２又はＨ２に隣接して
形成される。この結果、全体パターンは各位相部材πの
エツジ部が透明部Ｇ内に存在しないように複数のパター
ンに分解されることになる。Shown as G2. As can be seen from the same figure, here, each of the decomposition patterns RPI and RP2 is as shown in FIG. 1(a).
A light shielding part Cr, , surrounding the transparent part G, , G, corresponding to a part of the transparent part G forming the overall pattern RP shown in
Cr2 (however, although not shown in FIGS. 1(d) and (e), here it is assumed that the light shielding part also includes a light shielding fLST surrounding the pattern area PA), and the shielding part Cr forms the entire pattern RP. Two opposing edge portions of each light shielding portion Cry, Cr2 corresponding to a portion of are formed adjacent to mutually different transparent portions G1 or H, , G2 or H2. As a result, the entire pattern is decomposed into a plurality of patterns such that the edge portion of each phase member π does not exist within the transparent portion G.
従って、第１図（ｂ） に示した全体パターンでは各位
相部材πのエツジ部が透明部Ｇ内に存在していたが、第
１図（ｄ） 、（ｅ） に示した分解パターンＲＰ１．
ＲＰ２の各々では各位相部材πのエツジ部が遮光部Ｃｒ
、、Ｃｒ２内に存在することになる。そして、第１図（
ｄ） 、 （ｅ）中のＡ点が重なるように、順次位置合
わせして重ね合わせ露光を行なったところ、第１図（ｆ
）のように、スペースパターンＳ上にレジストが残るこ
となく、欠陥の無いレジストパターンＲを得ることかで
きた。Therefore, in the overall pattern shown in FIG. 1(b), the edge portion of each phase member π exists within the transparent portion G, but in the decomposed pattern RP1 shown in FIGS. 1(d) and (e).
In each of RP2, the edge part of each phase member π is a light shielding part Cr.
,, will exist in Cr2. And Figure 1 (
When overlapping exposure was performed by sequentially aligning the positions so that points A in d) and (e) overlapped, the result was as shown in Figure 1 (f).
), it was possible to obtain a defect-free resist pattern R without leaving any resist on the space pattern S.
（第２実施例）
第２実施例は、本発明を孤立した直線パターン（第２図
（ａ））に通用した例である。第２図（ａ）において、
パターン領域ＰＡ内のマスク裸面部（透過部Ｇ）には、
クロム等の遮蔽部Ｃｒて３本の直線パターンが形成され
ている。(Second Embodiment) The second embodiment is an example in which the present invention is applied to an isolated straight line pattern (FIG. 2(a)). In Figure 2(a),
In the mask bare surface part (transparent part G) in the pattern area PA,
Three linear patterns are formed in the shielding part Cr made of chrome or the like.
従来の方法で、周波数変調型の位相部材πを設けた場合
には例えば第２図（ｂ）のようなパターンになる。この
場合にも、ポジレジストを用いてパターンの転写をする
と、透過部Ｇ上にある位相部材πのエツジ部が、第２図
（ｃ）のように遮光部Ｃｒに対応したレジストパターン
（凸部）Ｒとともに、スペースパターン（凹部）Ｓ上に
レジストパターンＥとして残り、欠陥となってしまう。When a frequency modulation type phase member π is provided by the conventional method, a pattern as shown in FIG. 2(b) is obtained, for example. In this case as well, when the pattern is transferred using a positive resist, the edge part of the phase member π on the transparent part G will be transferred to the resist pattern (convex part) corresponding to the light shielding part Cr as shown in FIG. 2(c). ) R remains on the space pattern (concave portion) S as a resist pattern E, resulting in a defect.
そこで、第２図（ｄ） に示すような、全体パターン（
第２図（ｂ））の透過部Ｇ上にある位相部材πのエツジ
部に対応する部分を透過部Ｇ、としてもつパターンを用
意した。そして、第２図（ｂ）に示したマスクパターン
の露光に続けてこのパターンをＡ点が重なるように位置
合わせして重ね合わせ露光するようにした。この結果を
第２図（ｅ）に示す。同図から明らかなように、スペー
スパターンＳ上にレジストが残ることなく、欠陥のない
レジストパターンＲを得ることができる。Therefore, the overall pattern (
A pattern was prepared in which the portion corresponding to the edge portion of the phase member π located on the transparent portion G in FIG. 2(b)) was the transparent portion G. Then, following the exposure of the mask pattern shown in FIG. 2(b), this pattern was aligned so that point A overlapped with the mask pattern, and overlapping exposure was performed. The results are shown in FIG. 2(e). As is clear from the figure, no resist remains on the space pattern S, and a defect-free resist pattern R can be obtained.
ここでは第２図（ｄ）のパターンにより、前述の位相部
材πのエツジ部に対応した部分のレジストが露光される
ようにしたので、基板上にレジストが残ってしまう現象
を防ぐことができた。Here, the pattern shown in Figure 2(d) was used to expose the resist in the area corresponding to the edge of the phase member π mentioned above, thereby preventing the phenomenon of resist remaining on the substrate. .
（第３実施例）
第３実施例は、複雑な形状をもつ孤立したパターンが周
期的に並んだマスクパターン（第３図（ａ）で示す）に
、本発明の２つの露光方法（第１、第２の実施例による
方法）を単独、または組合せて通用した例である。(Third Example) In the third example, two exposure methods of the present invention (the first , the method according to the second embodiment) can be used alone or in combination.
第３図（ａ）に示すように、パターン領域ＰＡ内のマス
ク裸面部（透過部Ｇ）には、遮蔽部Ｃｒにより形成され
た複数の孤立パターンか周期的に配列されている。従っ
て、このままでは周波数変調型の位相部材を設けても、
先の第１、第２実施例と同様に位相部材のエツジ部に対
応した部分のレジストか残ってしまい、所望のレジスト
パターンを得ることは困難である。As shown in FIG. 3(a), a plurality of isolated patterns formed by shielding parts Cr are periodically arranged on the mask bare surface part (transmissive part G) in the pattern area PA. Therefore, even if a frequency modulation type phase member is provided as is,
As in the first and second embodiments, only a portion of the resist corresponding to the edge portion of the phase member remains, making it difficult to obtain a desired resist pattern.
これに対し、第３図（ｂ）で示す位相部材πを設けた第
１のフォトマスクと、第１のフォトマスクにおいて、透
過部Ｇ上にある位相部材πのエツジ部に対応した部分に
露光を行なうための第２のマスク（第３図（Ｃ））を用
意し、ポジレジスト付ウェハに対して２つのマスクのＡ
点が互いに重なるように位置合わせして露光を行なった
ところ、第３図（ｄ）のようにスペースパターンＳ上に
レジストが残ることなく、欠陥の無いレジストパターン
Ｒを得ることができた。ここで、第３図（ｂ）、（ｃ）
に示したパターンでは共に、透過部Ｇ透過部Ｇ内に位相
部材πのエツジ部が存在しているが、重ね合わせ露光を
行った場合にはいずれのフォトマスクのエツジ部であっ
ても、他方のフォトマスクの透過部Ｇ（位相部材πを備
えた透過部も含む）に重なるため、エツジ部に対応した
部分のレジストが基板上に残存することはない。尚、第
３図（Ｃ）で示す分解パターンにおいても位相部材πを
設けているが、第３図（ｂ） に示したパターンにお
ける各透明部の間隔（遮光部Ｃｒの線幅）が投影光学系
の解像度に比較して充分に大きい場合には、特に設けな
くてもよい。On the other hand, in the first photomask provided with the phase member π shown in FIG. A second mask (Fig. 3(C)) is prepared for performing this, and the A of the two masks is applied to the wafer with positive resist.
When the dots were aligned and exposed so that they overlapped with each other, no resist remained on the space pattern S, as shown in FIG. 3(d), and a defect-free resist pattern R could be obtained. Here, Fig. 3(b),(c)
In both of the patterns shown in FIG. Since it overlaps with the transparent portion G of the photomask (including the transparent portion with the phase member π), the resist in the portion corresponding to the edge portion will not remain on the substrate. Although the phase member π is also provided in the decomposition pattern shown in FIG. 3(C), the interval between each transparent part (the line width of the light shielding part Cr) in the pattern shown in FIG. 3(b) is determined by the projection optical If the resolution is sufficiently large compared to the resolution of the system, there is no need to provide it.
また、第３図（ａ）のパターンを、第１実施例での方法
に基づいて第３図（ｅ） 、 （ｆ）に示す２つのパ
ターンに分解して露光を行なっても、同様に欠陥の無い
パターンを得ることかできた。第３図（ｅ） 、（ｆ）
に示す分解パターンは共に、パターン領域ＰＡ内のマ
スク裸面部（透過部Ｇ）に遮光部Ｃｒ（図中の斜！１ｆ
ｆｉ＞によりパターンが形成されており、その透過部Ｇ
の一部には位相部材が設けられている。ここで、第３図
（ｅｌ 、 （ｆ）の分解パターンにおいて、遮光部
Ｃｒ内で斜線部がオーバーラツプする部分であって、最
終的に目的とするパターン（第３図（ａ））の遮蔽部Ｃ
ｒである。このように分解した場合には、図かられかる
ように、それぞれのフォトマスク（分解パターン）の遮
光部Ｃｒの幅は、第３図（ａ） に示した元のパターン
に比へて大きなものとなるので、この面からも解像度向
上の効果が得られる。Moreover, even if the pattern in FIG. 3(a) is separated into the two patterns shown in FIG. 3(e) and (f) and exposed based on the method in the first embodiment, the same defects will occur. I was able to get a pattern without. Figure 3 (e), (f)
Both of the decomposition patterns shown in FIG.
fi>, a pattern is formed, and its transparent part G
A phase member is provided in a part of the. Here, in the decomposition patterns of FIGS. 3(el, 3(f)), the shaded areas in the light shielding part Cr are the overlapping parts, and are the shielding parts of the final target pattern (FIG. 3(a)). C
It is r. When disassembled in this way, as can be seen from the figure, the width of the light shielding part Cr of each photomask (disassembled pattern) is larger than that of the original pattern shown in Figure 3(a). Therefore, the effect of improving resolution can be obtained from this aspect as well.
［発明の効果コ
本発明によれば、位相部材のエツジ部がパターン欠陥と
なる現象を防ぐことがてきるため、いままで空間周波数
変調型の位相シフター法を通用できなかったパターンに
対しても位相シフト法を通用することが可能である。[Effects of the Invention] According to the present invention, it is possible to prevent the edge portion of the phase member from becoming a pattern defect. It is possible to use the phase shift method.
′ｔＳ１図、第２図、第３図は本発明実施例によるフォ
トマスク及び露光方法を模式的に表した図、第４図は従
来の位相シフト法によるパターン欠陥を説明する図であ
る。
［主要部分の符号の説明］
Ａ：パターンの原点
Ｒニレジストパターン
Ｓニスペースパターン
Ｅ：パターン欠陥
π：位相部材
代理人 弁理士 佐 藤 正 年
１！４図
じｒ
１ｉ５図tS1, FIG. 2, and FIG. 3 are diagrams schematically representing a photomask and exposure method according to an embodiment of the present invention, and FIG. 4 is a diagram illustrating pattern defects caused by the conventional phase shift method. [Explanation of symbols of main parts] A: Pattern origin R Ni resist pattern S Ni space pattern E: Pattern defect π: Phase member agent Patent attorney Masaru Sato Year 1!4 Figure 1i5 Figure
Claims (1)
該エネルギー線に対する透過部と遮蔽部とにより幾何学
的なパターンが形成され、該パターンを感応基板へ転写
するために使われるフォトマスクにおいて、 前記感応基板上に形成すべき全体パターンが、パターン
の局所的な形状もしくは密度に応じて、全体パターンの
透過部及び遮蔽部の一部分に対応する透過部及び遮蔽部
を有する複数のパターンに分解されて形成されていると
ともに、該分解パターンの遮蔽部を挟む両側の透過部の
少なくとも一方に、透過光の位相を変化させる位相部材
が設けられ、 かつ、前記複数の分解パターンの各々は、前記全体パタ
ーンの透過部の一部分に対応する透過部の周辺を囲む遮
蔽部を有するとともに、 前記分解パターンの遮蔽部の対向した２つのエッジ部が
互いに異なる透過部に隣接して形成されたことを特徴と
するフォトマスク。 （２）所定のエネルギー線に対してほぼ透明な基板上に
該エネルギー線に対する透過部と遮蔽部とからなる幾何
学的なパターンが形成されたフォトマスクを介して、前
記エネルギー線を照射することにより感応基板を露光す
る方法において、前記感応基板上に形成すべき全体パタ
ーンの局所的な形状もしくは密度に基いて、前記全体パ
ターンを、次の（１）、（２）の条件を満たすように複
数のパターンに分解し、 （１）前記複数の分解パターンの各々は、前記全体パタ
ーンの透過部の一部分に対応する透過部の周辺を囲む遮
蔽部を有する。 （２）前記複数の分解パターンの各々は、前記全体パタ
ーンの遮蔽部の一部分に対応する遮蔽部の対向した２つ
のエッジ部が互いに異なる透過部に隣接する。 前記複数の分解パターンの各々をフォトマスクに形成す
るとともに、該分解パターンの遮蔽部を挟む両側の透過
部の少なくとも一方に透過、光の位相を変化させる位相
部材を設け、しかる後、前記複数の分解パターンの各々
を前記感応基板上に順次位置合わせして重ね合わせ露光
することを特徴とする露光方法。 （３）所定のエネルギー線に対してほぼ透明な基板上に
該エネルギー線に対する透過部と遮蔽部とからなる幾何
学的なパターンが形成されたフォトマスクを介して、前
記エネルギー線を照射することにより感応基板を露光す
る方法において、前記パターンの遮蔽部を挟む両側の透
過部の少なくとも一方に透過光の位相を変化させる位相
部材を設けて前記パターンを露光するとともに、前記パ
ターンの透過部上における前記位相部材のエッジ部に対
応する透過部を有するフォトマスクを介して、前記エッ
ジ部を再露光することを特徴とする露光方法。[Claims] (1) A geometric pattern is formed on a substrate that is substantially transparent to a predetermined energy ray by a transmitting part and a shielding part for the energy ray, and the pattern is transferred to a sensitive substrate. In the photomask used for this purpose, the entire pattern to be formed on the sensitive substrate has a transparent part and a shielding part corresponding to a part of the transmitting part and a shielding part of the whole pattern, depending on the local shape or density of the pattern. a phase member that changes the phase of transmitted light is provided on at least one of the transmitting parts on both sides of the shielding part of the decomposed pattern; Each of the decomposition patterns has a shielding part surrounding a periphery of the transparent part corresponding to a part of the transparent part of the overall pattern, and two opposing edge parts of the shielding part of the decomposition pattern are adjacent to different transparent parts. A photomask characterized by being formed by. (2) Irradiating the energy rays through a photomask in which a geometric pattern consisting of a transparent part and a shielding part for the energy rays is formed on a substrate that is substantially transparent to the energy rays. In the method of exposing a sensitive substrate, the overall pattern is adjusted to satisfy the following conditions (1) and (2) based on the local shape or density of the overall pattern to be formed on the sensitive substrate. Decomposed into a plurality of patterns: (1) Each of the plurality of decomposed patterns has a shielding part surrounding a periphery of a transparent part corresponding to a part of the transparent part of the whole pattern. (2) Each of the plurality of decomposed patterns is adjacent to a transparent portion in which two opposing edge portions of a shielding portion corresponding to a portion of the shielding portion of the overall pattern are different from each other. Each of the plurality of decomposition patterns is formed on a photomask, and at least one of the transmission parts on both sides sandwiching the shielding part of the decomposition pattern is provided with a phase member that transmits and changes the phase of light. An exposure method characterized by sequentially aligning each of the separated patterns on the sensitive substrate and exposing them to light in an overlapping manner. (3) Irradiating the energy rays through a photomask in which a geometric pattern consisting of a transmitting part and a shielding part for the energy rays is formed on a substrate that is substantially transparent to the energy rays. In the method of exposing a sensitive substrate to light, a phase member that changes the phase of transmitted light is provided on at least one of the transmitting parts on both sides of the shielding part of the pattern, and the pattern is exposed. An exposure method comprising re-exposing the edge portion of the phase member through a photomask having a transparent portion corresponding to the edge portion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31414890A JP3094439B2 (en) | 1990-11-21 | 1990-11-21 | Exposure method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31414890A JP3094439B2 (en) | 1990-11-21 | 1990-11-21 | Exposure method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04186244A true JPH04186244A (en) | 1992-07-03 |
| JP3094439B2 JP3094439B2 (en) | 2000-10-03 |
Family
ID=18049808
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP31414890A Expired - Fee Related JP3094439B2 (en) | 1990-11-21 | 1990-11-21 | Exposure method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3094439B2 (en) |
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| Publication number | Publication date |
|---|---|
| JP3094439B2 (en) | 2000-10-03 |
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