JPH04180557A - Plasma treating device - Google Patents

Abstract

PURPOSE:To uniform distribution of plasma, to enhance its density and to prevent generation of dust by plasmatizing reactive gas and confining it by a cusp type magnetic field, and providing a means for preventing plasma from being washed away from the loss part of plasma. CONSTITUTION:Reactive gas is excited and plasmatized between a base plate electrode 2 with a wafer 1 placed thereon and a counter electrode 3 in a treatment chamber 8 which is vacuumized and exhaust by a vacuum treating device 7. This plasma 10 is confined by a magnetic field formed by the lines 9 of magnetic force due to the coils 4a, 4b and led on the wafer 1 to treat this. In the plasma treating device, a linear cusp part 11 is confined for the plasma 10 of a cusp magnetic filed and the linear cusp part 11 is free from restraint and becomes the loss part of plasma. A doughnutlike parallel plane electrode 5 are provided herein. Plasma is prevented from being washed away and diffused by generating a reverse electric field thereon. Thereby, plasma is uniformly distributed and its density is enhanced. Moreover, dust is prevented from being generated by abnormal discharge o the wall surface and plasma treatment is enabled with good quality.

Description

[Detailed Description of the Invention] [Industrial Application Field] The present invention is directed to forming a thin film on an object to be processed using reaction residues turned into plasma, or processing a thin film formed on an object to be processed. The present invention relates to a plasma processing apparatus in which thin film formation and processing are performed with high precision in a state where dust is excluded.

[Prior Art] As a conventional plasma processing apparatus, a capacitively coupled type equipped with parallel plate electrodes is known. The reaction gas is turned into plasma by applying direct current or high frequency power to one or both of the two electrode plates arranged in parallel. for example,
When such a plasma processing apparatus is used for plasma CVD, the electrode portion facing the object to be processed has a hollow structure, and the CVD gas is emitted from a large number of small holes opened toward the object to be processed. It is designed to flow toward the object to be treated. CVD scum is activated by plasma on the way to the workpiece, and a predetermined thin film is formed on the workpiece (for example, ``plasma and film formation (See "Basics" by Mitsuharu Onuma, published by Nikkan Kogyo Shimbun, 1986, p. 158). However, the plasma generated between the parallel plate electrodes directly diverges in the circumferential direction, making it impossible to maintain a high plasma density, making it impossible to increase the processing speed.

On the other hand, examples of sputtering film formation with increased processing speed include those described in Japanese Patent Publication No. 19319/1983. According to this publication, a pair of cathodes of a magnetic device are provided on the back side of the target material surface of the cathode, and arc-shaped lines of magnetic force generated in the magnetic device are formed along the cathode surfaces. The charged particles of the plasma generated by applying electric power to the cathode undergo cyclotron motion and are restrained by the magnetic lines of force, resulting in a higher density plasma than in parallel plate sputtering equipment. It is now possible to obtain high film-forming processing speeds.

In addition, as a CvD and etching device, JP-A-57
As described in Japanese Patent No. 167631, ECR (Electron Cyclotron) is used to generate plasma.
A method using microwaves in the Re5onance state is known. The ECR state is a state in which the frequency of the microwave and the rotation frequency of electrons rotating in the magnetic field match.For example, in the case of a 2.45 GHz microwave, a magnetic field of 875 Gauss is required parallel to the microwave. be. When the ECR conditions are satisfied, microwaves can travel through the plasma regardless of the plasma density, and the plasma can be made denser, making it possible to perform high-speed processing under low pressure.

[Problem to be solved by the invention] However, in the above-mentioned conventional technology, it is possible to generate high-density plasma at low pressure by using a magnetron magnetic field and ECR conditions, which makes it possible to speed up film formation or processing. Although this is intended, it has resulted in various problems.

This is because, in the case of the magnetron method, plasma is confined by arc-shaped lines of magnetic force generated on the cathode surface, so that only the plasma density in the confined region is higher than that in other regions on the electrode. The plasma density is non-uniformly distributed. This non-uniform distribution of plasma density causes the power to be concentrated in a certain area, which can cause damage or melting of the target, making it difficult to apply large amounts of power, making it necessary to further improve processing speed. The current situation is that it is difficult.

Due to the non-uniform distribution of plasma density, the erosion area on the target is also locally limited, making it necessary to frequently replace the target. In addition, when performing bias sputtering using the magnetron method,
That is, when performing bias sputtering, which makes it possible to improve the absorption and Kjl reversibility of the film deposited on the substrate by applying power to the substrate side and drawing ions into the substrate,
Due to the non-uniformity of the generated plasma, the distribution of ions drawn into the substrate also becomes non-uniform, resulting in a uniform film quality on the substrate.
Alternatively, a uniform surface shape cannot be obtained. As a method for solving this problem, plasma is generated uniformly on the target or substrate by eccentrically rotating the magnetron magnetic field (Japanese Patent Laid-Open No. 173265/1983). However, this method causes new problems. As the plasma density changes over time when viewed from the substrate, changes in the amount of charge on the substrate surface appear as a current on the substrate, and this current affects the semiconductor element, but consideration has not been given to this. It is said that it is not. In particular, as the integration of devices progresses, the amount of control current decreases in order to alleviate the electric field inside the device, and the tolerance for damage decreases, so it is necessary to eliminate factors that cause damage as much as possible. There is. Furthermore, in the case of the magnetron method, the restraining force on the plasma is surrounded by arc-shaped magnetic lines of force and exists only in the teJj region, so the plasma generated in other regions on the electrode can easily be generated in the circumferential direction, as in the case of the parallel plate type. It is designed to be emitted by Depending on this divergent plasma, phenomena such as, for example, the insulation between the electrode and the wall around the electrode are reduced, causing abnormal discharge, or ions colliding with the wall. These phenomena also cause dust to be generated from the electrodes and wall materials, so it is necessary to eliminate plasma divergence as much as possible. This is because if dust is generated by the divergent plasma, it will lead to an increase in the defect density of the film, leading to a decrease in the performance and reliability of the semiconductor element.

Therefore, a means to confine the plasma with uniform distribution is required, but in this regard, in the ECR method, the plasma generated in space by electrodeless discharge is transported along the magnetic field and carried to the substrate surface, or It is designed to be confined in space (for example, Japanese Patent Application Laid-Open No. 64-2
(No. 322, Japanese Unexamined Patent Publication No. 63-192292), it is only necessary to have a means for uniformly confining the plasma on the substrate surface. By the way, regarding the magnetic field for confining plasma in space, for example, "Plasma Physics for Nuclear Fusion" (written by Kenbu Miyamoto, published by Niwanami Shoten in 1987, No. 50)
As described in page 8), there are two types: cusp type and upper mirror type. The magnetic field obtained by passing current in opposite directions through a pair of coaxially arranged coils is cusp-shaped, and the lines of magnetic force are convex with respect to the plasma. On the other hand, the magnetic field obtained by passing current through a set of coils in the same direction is of a mirror type, and the lines of magnetic force are as concave as possible with respect to the plasma. However, when a mirror magnetic field is used, the plasma shape is cylindrical, and the plasma is unstable (for example, "Plasma Engineering" (written by Yoshiaki Nakano, published by Corona Publishing, 1977).
8), p. 260)).

Therefore, the adoption of mirror-type magnetic fields in plasma processing equipment is important considering the increasing diameter of wafers to be processed in the future.
The reality is that it has become difficult.

On the other hand, in the case of a cusp magnetic field, the magnetic field lines are said to have a magnetic field shape that spreads in the circumferential direction, and it is also excellent in terms of plasma stability, so cusp magnetic fields are used as a basis for confining plasma over a large area. The magnetic field shape is desirable.

However, even if a magnetic field shape based on a cusp magnetic field is adopted, the reality is that there are still some unique problems caused by this. This is because in the case of plasma magnetic field confinement, the motion of charged particles in the direction parallel to the magnetic field lines becomes cyclotron motion and is subject to a restraining force, but there is no restraining force in the direction along the magnetic field lines, and therefore the cusp In the case of a magnetic field, there is a plasma loss area called a line cusp in the circumferential direction, and there is a problem of plasma loss due to diffusion. If the amount of flow from the plasma loss section is large, even if the plasma on the electrode becomes uniform, the plasma density will not increase, and as mentioned above, there is a possibility that dust may be generated depending on the flow of plasma. There is.

The purpose of the present invention is to uniformly distribute the plasma on the electrode and increase its density by suppressing the flow of plasma from the plasma loss area when a magnetic field shape based on a cusp magnetic field is adopted for plasma confinement. To provide a plasma processing apparatus which can prevent the generation of dust.

[Means for Solving the Problems] The above objective is based on the need to improve the confinement of plasma in the confinement region in general terms, so in order to prevent the plasma from flowing out from the plasma loss region, the purpose is to Alternatively, this can be achieved by providing a negative potential, a means for generating a spatial force in the direction of plasma generation against positively or negatively charged particles, or a means for discharging plasma. More specifically, as means for preventing plasma flow away, at least one of an electric field generating means and a magnetic field generating means is provided near the plasma loss section, or a method for forming a potential for preventing diffusion in the plasma loss section. This is achieved by arranging a cylindrical electrode connected to a negative power source.

[Effect] Plasma is said to be a state in which positively charged particles (ions) and negatively charged particles (electrons) coexist.In plasma diffusion, first of all, the mobility of electrons with small mass is large. First, as a result of electrons diffusing due to an external force or naturally, the balance of positive and negative charges is disrupted and an electric field is generated, and the ions move due to this electric field.The pattern is repeated, and diffusion in this state is generally This is called bipolar diffusion. Therefore, in order to prevent the plasma from flowing away from the confinement region, it is sufficient to suppress the movement of ions or electrons in the direction of flow, and it is particularly desirable to prevent the diffusion of electrons with high mobility.

Now, there are two ways to reduce the velocity component in the direction of flow, one is to create a potential,
The second method is to apply inward electromagnetic force to charged particles. Among these, the formation of the former potential is being studied in the confinement magnetic field for nuclear fusion using a cusp magnetic field ("Modern Plasma Engineering", edited by Tadashi Sekiguchi, published by Ohmsha, pp. 234-237). ), the idea is to generate a potential that acts on charged particles in a high-frequency electromagnetic field to form a Pondera motive force. For example, in the cusp magnetic field, the plasma hemistatic value (=
Plasma pressure/magnetic pressure) is made sufficiently smaller than 1 to make the plasma near the line cusp as a plasma loss part as thin as the cyclotron radius of the ion, and the electrostatic ion cyclotron wave (ω. 1 = e
B 7m + (However, e・elementary charge, B・magnetic flux density,
m is the mass of the ion)) is ω2p + 〉〉ω2
c i (”' 9! ”” (n + e 2/
εo m 1) '', ω~1.4×ωcl)
It is known that efficient confinement is possible by applying a high-frequency electromagnetic field with

Further, as a method for applying an inward force to a charged particle, the Lorentz force F (=evB (where ■·charged particle velocity)) is used. The thickness of the plasma at the plasma loss part is thin.
In addition, when the plasma density is sufficiently low, an electric field generated in the plasma by a DC power source is used, or a sheath electric field generated between the plasma and an electrode plate provided in the plasma loss section is used. Here, in order for the Lorentz force on electrons to act in the direction of the plasma generation area, the lines of magnetic force must have a circumferential component at the position of the electrode plate as the electric field generation area (generally in an axisymmetric magnetic field such as a cusp magnetic field, (no directional component). Therefore, by providing an auxiliary magnetic field generating section that generates a circumferential magnetic field near the electric field generating section,
As a result of the electrons receiving an inward force, diffusion loss in the radial direction of the plasma can be prevented.

As a method other than the above, it is also possible to install an insulating wall with a variable applied voltage perpendicular to the lines of magnetic force in the plasma loss area, that is, to block the flow of plasma in the plasma loss area. It has become something that can be done. By keeping the walls at a negative potential, outward diffusion of electrons can be prevented.

As a method other than using an electric field, a method using magnetic field confinement can be considered. By forming a mirror magnetic field in the plasma loss area, it is possible to actively generate an inward force on the plasma, or to prevent the loss of charged particles that satisfy the reflection condition among the flowing plasma. ing.

[Example code] The present invention will be explained below with reference to FIGS. 1 to 5.

First, the plasma processing apparatus according to the present invention will be described. FIG. 1 shows a vertical cross-section of a main part of the first example. As shown in the figure, inside the processing chamber 8, a substrate electrode 2 on which a wafer 1 as an object to be processed is placed, and an electrode 3 facing the substrate electrode 2 are installed. The plasma processing apparatus in this example is of a parallel plate type, and a DC power source or a high frequency power source is connected to the electrode 3, which is a metal disk whose surface has been treated.

In the case of the ECR type, the electrode 3 corresponds to a plasma generation source using microwaves. Now, for each electrode 2.3, a coil 4 for forming a plasma confinement magnetic field.
By arranging elements a and 4b, a prototype plasma processing apparatus is constructed.

In this example, the plasma processing apparatus configured as described above includes:
A parallel plate electrode 5 in the shape of a toner is provided around the electrode 2.3 as shown in the figure, and a high frequency power source 6 is connected to this. At that time, the parallel plate electrode 5 itself is not subjected to surface treatment, for example.
The surface has been previously treated to increase the sputtering threshold energy or to provide a surface with low sputtering efficiency.

Now, to explain the plasma processing by the plasma processing apparatus in this example, first, after the wafer 1 is placed on the electrode 2, the entire processing chamber 8 is evacuated by the vacuum processing apparatus 7, and the reaction is performed. Gas is introduced into the processing chamber 8. Also, by flowing current in the opposite direction to each of the coils 4a and 4b, the coils 4a and 4b
(b) The magnetic lines of force 9 are formed in a direction that repel each other, so that a Cubs magnetic field having a shape similar to that of two trumpets abutted against each other is obtained. Since the magnetic field lines 9 due to the Cubs magnetic field have a convex shape with respect to the plasma 10,
The plasma 10 can stably exist in the confinement region (within the region indicated by the broken line) by the Cubs magnetic field. However, in the Cubus magnetic field, there is a line cusp part (plasma loss part) 11 around the plasma 10 that does not have a restraining force, so due to the existence of this line cusp 11,
Even if it is assumed that there are no collisions between particles in the plasma 10, the plasma 10 can only be confined in a magnetic field for a certain period of time. Therefore, in order to improve the processing speed, it is possible to increase the amount of generated plasma by increasing the applied power, but the problems caused by the increase in the applied power have already been described. In other words, an increase in the applied power may induce abnormal heating of the processing chamber members, or an increase in the bias voltage generated between the plasma and the electrodes may cause the electrode members to be sputtered, resulting in foreign matter or dust being mixed in. There is. In addition, if lost plasma exists, for example, between the electrode 3 to which power is applied and the wall of the processing chamber 8 that is at ground potential, the distance between the electrode 3 and the processing chamber 8 is significantly shortened. As a result, abnormal discharge may occur, and there is also a risk that foreign matter may be mixed in as dust. Furthermore, even if abnormal discharge does not occur due to the lost plasma, ions in the plasma collide with the wall surface of the processing chamber 8 due to the bias voltage generated between the wall surface of the processing chamber 8 and become attached to the wall surface. There is a risk that adsorbed substances such as H and O in the gas phase, as well as products of radicals in the reaction gas carried along with the lost plasma, may be mixed into the gas phase as dust due to sputtering. It has become a thing.

Incidentally, highly integrated devices have very strict specifications against dust. For example, in the process of forming thin films, it is now required to control crystallinity.
For this reason, it is essential to clean the surface of the wafer before processing. However, even if the wafer is cleaned before processing, if the wafer surface is contaminated by dust generated during processing due to the factors mentioned above, it is impossible to obtain a high-quality thin film. It has become.

The parallel plate electrode 5 is provided to solve the above-mentioned problems all at once. When high-frequency power is applied to the parallel plate electrode 5, the electrons receive a force in the direction of the plasma generation area, and at the same time, the movement of the electrons generates a reverse electric field, preventing ions from being washed away and diffused. It can be done. If the plasma is thin enough (such a plasma is called a sheet plasma), an electric field can exist in the plasma, and a potential such as Pon der Motivka can be formed.

FIG. 2 also shows a longitudinal section of a main part of a second example of the plasma processing apparatus according to the present invention. As shown in the figure, a donut-shaped magnetic field generating coil 1 is further added to the first configuration.
As shown in the figure, the electrode 2 is provided with the parallel plate electrode 5 sandwiched therebetween. In the first example, diffusion and loss of plasma is prevented by the Pon der motive force, but in this example, the case where the Pon der motive force does not occur is taken into consideration. For example, as a condition under which the Ponder motive force does not occur, when sheet plasma is not formed, that is, when high frequency power cannot penetrate through the plasma, applying high frequency power to the parallel plate electrode 5 causes the plasma and the parallel plate electrode to 5, a bias potential is generated between the two. Now, the newly provided magnetic field generating coil 12 is arranged so that the resulting magnetic field has only a circumferential component, and magnetic fields are generated in opposite directions above and below the parallel plate electrode 5.

As a result, a negative potential is always generated on the surface of the parallel plate electrode 5 against the flowing plasma, and an upward electric field acts on the upper parallel plate electrode 5, and a downward electric field acts on the lower part. (the electric field strength is E).

Further, the cusp magnetic field is distorted in opposite directions at the top and bottom in the circumferential direction as it approaches the hem by the magnetic generation coil 12, so that circumferential magnetic field components B,', etc. are generated. I want a parallel plate type I! ii! The force F acting on electrons in the plasma in the vicinity of 5 is the inward radial component F, (=eXv
XB.

FIG. 3 shows a longitudinal section of a main part of a third example of the plasma processing apparatus according to the present invention. As shown in the figure, the basic configuration is the same as that in the first example, but a cylindrical electrode 13 whose surface is insulated is newly arranged in the plasma loss section in a state where the lines of magnetic force 9 are separated. It is supposed to be done. In this case, if the electrode 13 has a floating potential, the mobility of electrons is high in the washed-out plasma, so the surface of the electrode 13 is negatively charged due to the covering of electrons, and a negative electric field is generated in the plasma. , the ions will hit the surface of the electrode 13. However, when the potential on the surface of the electrode 13 is set to an optimal negative potential by the DC power supply 14, the electrons receive a repulsive force due to the electric field, so that diffusion and loss of plasma can be prevented.

FIG. 4 shows a longitudinal section of a main part of a fourth example of a plasma processing apparatus according to the present invention. As shown in the figure, the basic configuration is the same as that in the first example, but two pairs of magnetic field generating coils 15 are arranged near the line cusp section 11, which is the plasma loss section. . If a current is caused to flow in a predetermined direction through these magnetic field generating coils 15, as shown in FIG. It has become so. This magnetic field is a modification of the mirror magnetic field, and has confinement properties for plasma. Plasma flowing in from one side of the mirror magnetic field has a mirror ratio R (== B m/B a), which is the ratio between the maximum magnetic field value B, and the minimum magnetic field value B0 in the mirror magnetic field.
and the minimum magnetic field value B. The velocity of the particle as it passes through vo
, its circumferential and radial velocity components are ■, respectively. Q,
V e r, θ given by 5in20yo=1/'R, using the pitch angle θ when a charged particle makes a spiral motion so as to wrap around a magnetic field line. On the other hand, if the condition θ>θ7 is satisfied, the charged particles are confined in the mirror magnetic field. In the case of the plasma confinement method in this example, there is no force to push back the plasma that has flown away, or because the plasma does not receive the electromagnetic force to maintain the plasma in the mirror magnetic field, ions and electrons are generated while being confined. The recombination of the ions neutralizes the ions, so that the walls of the processing chamber 8 are not adversely affected. Even if the above-mentioned confinement condition is broken due to a collision within the mirror magnetic field, there is a probability of 1/2 that the particle will move in the direction of the plasma generation area.

In this way, the negative effects of plasma on the outside can be reduced.

Finally, when putting the plasma processing apparatus according to the present invention into practical use, if the wafer is taken in and taken out from the side surface between the substrate electrode and the counter electrode, the electromagnetic field generating means as a means for preventing plasma flow away should be directed against the wafer surface. It is necessary to be able to move vertically. This is because if it is movable, wafers can be easily taken in and taken out.

[Effects of the Invention] As explained above, according to the present invention, when a magnetic field shape based on a cusp magnetic field is adopted for plasma confinement, by suppressing the flow of plasma from the plasma loss part, By making the distribution of plasma uniform and increasing its density, it is possible to prevent the generation of dust that tends to occur. When processing, thin film formation,
The effect is that processing can be performed with high precision in a state where dust is excluded.

[Brief explanation of the drawing]

FIG. 1 is a longitudinal cross-sectional view of a main part of a first example of a plasma processing apparatus according to the present invention, and FIG. 2 is a longitudinal cross-sectional view of a main part of a second example of a plasma processing apparatus according to the present invention. FIG. 3 is a diagram showing a vertical cross section of a main part of a third example of a plasma processing apparatus according to the present invention, and FIG. FIG. 5 is a diagram showing a vertical cross section of a main part, and is a diagram showing a vertical cross section of a mirror magnetic field at a line cusp portion related to FIG. 4. 1... Wafer (workpiece), 2. Substrate electrode, 3...
Electrodes, 4a, 4b... Coil (for plasma confinement magnetic field formation), 5... Parallel plate electrode (for plasma flow prevention), 6... High frequency power supply, 7... Vacuum processing device, 8...
...Processing chamber, 9...Magnetic field lines, 10...Plasma, 1
1... Wire cusp part, 12. 15... Magnetic field generating coil (for preventing plasma run-off), 13... Cylindrical electrode (for preventing plasma run-off), 14... DC power supply agent Patent attorney Akimoto True Figure 1] Uha (1 [Shimacho! Threat tJ) 10
centre. Las 72, Rei Itaden Honse]
], Kishi 1 Kasu 2 Decoration 3° Ryuhinoki 4a, 4b Coil (7 = Wospama closed u'iw) Ail
Ht No. Mlfl) 5 Leathering Dengoko Rikijou 1 and Honse (70 Rasuma Ryu Dai? Fang Koko Tsume) 6 Ii 14 Cover) Ice 7 Ura) Sou No. Cane 1 8 processing! 9' Point Bansho Diagram 2] Uha (Government Office Keitake) 8 Grudge 1 9 Fuji-n machine ko゛fuoras ma]ko Ji Kaku Kasuf ・Part 12 Kenmu 1 and 1 are both raw coils ( 7. Sea urchin A and big h
Figure 3 ・ 3゛ meeting & 14:tn eyebrow rise 4a, 4b: ]a shuku 7-7i? L；jAFl caget
tJEffi) 7, X Kuso V! Gorge 1 8 processing! 9: Cage Farming] 0゛FuO Dema Figure 4] To the sea urchin (Serie Punishment) 2 city groups 8 processing! 9' Oboroga Shin ( ) Ofu Q Huspa 7 11: aya Sufu・Yu

Claims (1)

[Claims] 1. By transporting one or more types of reactive gases turned into plasma by excitation onto an object to be processed in a state where the reactive gases are confined by at least a cusp-shaped magnetic field,
In a plasma processing apparatus that forms a thin film on an object to be processed, processes a thin film, or performs sputtering film formation by drawing ions from the reaction gas to an electrode to which electric power is applied, an electrode or a processing chamber wall member is used. 1. A plasma processing apparatus configured to include means for preventing plasma from flowing out from a plasma loss section in a plasma confinement region in order to prevent dust from being generated. 2. By transporting one or more types of reactive gases that have been turned into plasma by excitation onto an object to be processed while being confined by at least a cusp-shaped magnetic field,
In a plasma processing apparatus that forms a thin film on a workpiece, processes a thin film, or performs sputtering film formation by drawing ions from the reaction gas to an electrode to which electric power is applied, plasma A plasma processing apparatus configured to include at least one of an electric field generating means and a magnetic field generating means in the vicinity of a loss portion. 3. By transporting one or more types of reactive gases that have been turned into plasma by excitation onto the object to be treated while being confined by at least a cusp-shaped magnetic field,
In a plasma processing apparatus that forms a thin film on a workpiece, processes a thin film, or performs sputtering film formation by drawing ions from the reaction gas to an electrode to which electric power is applied, plasma A plasma processing apparatus having a configuration in which a cylindrical electrode connected to a negative power source is arranged in a loss section. 4. By transporting one or more types of reactive gases that have been turned into plasma by excitation onto the object to be treated while being confined by at least a cusp-shaped magnetic field,
In a plasma processing apparatus that forms a thin film on a workpiece, processes a thin film, or performs sputtering film formation by drawing ions from the reaction gas to an electrode to which electric power is applied, plasma A plasma processing apparatus configured to include donut-shaped parallel plate electrodes connected to a high-frequency power source with a loss portion sandwiched therebetween. 5. By transporting one or more types of reactive gas that has been turned into plasma by excitation onto the object to be treated while being confined by at least a cusp-shaped magnetic field,
In a plasma processing apparatus that forms a thin film on a workpiece, processes a thin film, or performs sputtering film formation by drawing ions from the reaction gas to an electrode to which electric power is applied, plasma A plasma processing apparatus comprising donut-shaped parallel plate electrodes connected to a high-frequency power source with a loss part sandwiched therebetween, and a donut-shaped magnetic field generating means with the electrodes sandwiched therebetween. . 6. By transporting one or more types of reactive gas that has been turned into plasma by excitation onto the object to be treated while being confined by at least a cusp-shaped magnetic field,
In a plasma processing apparatus that forms a thin film on a workpiece, processes a thin film, or performs sputtering film formation by drawing ions from the reaction gas to an electrode to which electric power is applied, plasma A donut-shaped parallel plate electrode connected to a high frequency power source is provided with the loss part sandwiched between them, and with the electrodes sandwiched between them, the direction of the magnetic field is only a circumferential component, and the magnetic field is opposed to each other. A plasma processing apparatus comprising a donut-shaped magnetic field generating means that generates a magnetic field in an opposite direction on the parallel plate electrode surfaces. 7. By transporting one or more types of reactive gas that has been turned into plasma by excitation onto the object to be treated while being confined by at least a cusp-shaped magnetic field,
In a plasma processing apparatus that forms a thin film on a workpiece, processes a thin film, or performs sputtering film formation by drawing ions from the reaction gas to an electrode to which electric power is applied, plasma A donut-shaped parallel plate electrode connected to a high frequency power source is provided with the loss portion sandwiched between them, and the magnetic field provided with the electrodes sandwiched therebetween has only a circumferential component, The plasma processing apparatus is configured such that a donut-shaped magnetic field generating means that generates a magnetic field in an opposite direction on the opposing surfaces of the parallel plate electrodes is a set of coils spirally wound in the circumferential direction. 8. By transporting one or more types of reactive gases that have been turned into plasma by excitation onto the object to be treated while being confined by at least a cusp-shaped magnetic field,
In a plasma processing apparatus that forms a thin film on a workpiece, processes a thin film, or performs sputtering film formation by drawing ions from the reaction gas to an electrode to which electric power is applied, plasma A plasma processing apparatus configured such that donut-shaped parallel plate electrodes connected to a high-frequency power source, which are provided with a loss portion sandwiched therebetween, are movable relative to the surface of a substrate as an object to be processed. 9. By transporting one or more types of reactive gas that has been turned into plasma by excitation onto the object to be treated while being confined by at least a cusp-shaped magnetic field,
In a plasma processing apparatus that forms a thin film on a workpiece, processes a thin film, or performs sputtering film formation by drawing ions from the reaction gas to an electrode to which electric power is applied, plasma A donut-shaped parallel plate electrode connected to a high-frequency power source is provided with a loss portion in between, and a donut-shaped magnetic field generating means is provided with the electrode in between. A plasma processing apparatus configured to be movable relative to the surface of a substrate as an object. 10. Formation of a thin film on the object to be processed by transporting the one or more types of reaction gas that has been turned into plasma by excitation onto the object while being confined by at least a cusp-shaped magnetic field; Alternatively, in a plasma processing apparatus that processes thin films or performs sputtering film formation by drawing ions from the reaction gas to an electrode to which electric power is applied, as a means to prevent plasma flow, a plasma loss part is placed in between. A plasma processing apparatus having a configuration in which a magnetic field generating means is provided twice in the radial direction. 11. Formation of a thin film on the object to be processed by transporting the one or more types of reaction gas that has been turned into plasma by excitation onto the object while being confined by at least a cusp-shaped magnetic field; Alternatively, in a plasma processing apparatus that processes a thin film or performs sputtering film formation by drawing ions from the reaction gas to an electrode to which electric power is applied, as a means for preventing plasma loss, a plasma loss part is sandwiched between the In the magnetic field generating means as a coil, which is provided twice in the radial direction as a pair,
The current flowing through the coils is in opposite directions in the pair of coils,
A plasma processing device configured such that the inner and outer coils are radially oriented in the same direction.