JPH04171796A - Low dielectric constant wiring board - Google Patents
Low dielectric constant wiring boardInfo
- Publication number
- JPH04171796A JPH04171796A JP29929790A JP29929790A JPH04171796A JP H04171796 A JPH04171796 A JP H04171796A JP 29929790 A JP29929790 A JP 29929790A JP 29929790 A JP29929790 A JP 29929790A JP H04171796 A JPH04171796 A JP H04171796A
- Authority
- JP
- Japan
- Prior art keywords
- dielectric constant
- wiring board
- glass
- benzocyclobutene
- prepreg
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000011347 resin Substances 0.000 claims abstract description 14
- 229920005989 resin Polymers 0.000 claims abstract description 14
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000000463 material Substances 0.000 claims abstract description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000004020 conductor Substances 0.000 claims abstract description 5
- 230000003014 reinforcing effect Effects 0.000 claims abstract description 5
- 239000011521 glass Substances 0.000 abstract description 18
- 239000004744 fabric Substances 0.000 abstract description 14
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 8
- 239000011889 copper foil Substances 0.000 abstract description 8
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 abstract description 6
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 3
- 229910052681 coesite Inorganic materials 0.000 abstract description 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 2
- 239000000377 silicon dioxide Substances 0.000 abstract description 2
- 229910052682 stishovite Inorganic materials 0.000 abstract description 2
- 229910052905 tridymite Inorganic materials 0.000 abstract description 2
- 230000008054 signal transmission Effects 0.000 abstract 2
- 238000010030 laminating Methods 0.000 abstract 1
- 229920001721 polyimide Polymers 0.000 description 8
- 239000004642 Polyimide Substances 0.000 description 4
- 238000004891 communication Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 2
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- 239000012779 reinforcing material Substances 0.000 description 2
- 239000004952 Polyamide Substances 0.000 description 1
- 229920006231 aramid fiber Polymers 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0213—Electrical arrangements not otherwise provided for
- H05K1/0216—Reduction of cross-talk, noise or electromagnetic interference
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0313—Organic insulating material
- H05K1/0353—Organic insulating material consisting of two or more materials, e.g. two or more polymers, polymer + filler, + reinforcement
- H05K1/0366—Organic insulating material consisting of two or more materials, e.g. two or more polymers, polymer + filler, + reinforcement reinforced, e.g. by fibres, fabrics
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4644—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
- H05K3/4673—Application methods or materials of intermediate insulating layers not specially adapted to any one of the previous methods of adding a circuit layer
- H05K3/4676—Single layer compositions
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は集積度の高いＬＳＩ実装用基板に関して、特に
高速演算用コンピュータあるいは、衛星通信、衛星放送
等のＧＨｚ（ギガヘルツ）帯が使用される高周波通信用
に実装でき、微細多層配線が可能な多層配線基板に関す
るものである。[Detailed Description of the Invention] (Industrial Application Field) The present invention relates to highly integrated LSI mounting boards, particularly those in which the GHz (gigahertz) band is used for high-speed computing computers, satellite communications, satellite broadcasting, etc. The present invention relates to a multilayer wiring board that can be mounted for high frequency communication and allows fine multilayer wiring.
（従来の技術）
従来、この種の集積度の高いＬＳＩ実装用基板としては
、微細多層配線が可能なガラスクロスエポキシ多層配線
基板、ガラスクロスポリイミド多層配線基板等が用いら
れている。(Prior Art) Conventionally, as this type of highly integrated LSI mounting board, a glass cloth epoxy multilayer wiring board, a glass cloth polyimide multilayer wiring board, etc., which are capable of fine multilayer wiring, have been used.
ガラスクロスエポキシ、ガラスクロスポリイミド等の多
層配線基板は、ガラスクロスに樹脂を含侵し、複数の導
体層である銅箔を、前記樹脂層を介して積層した構造と
なっている。その作成方法について、以下第１図に従っ
て述べると、エポキシ樹脂、ポリイミド樹脂等をガラス
等から成る繊維を織ったクロス等の補強基材に含浸後、
乾燥させ、プリプレグ２を作成する。このプリプレグ２
を所定の大きさに切断し、１枚または、複数を内層回路
３、銅箔１とともに重ねて、加熱プレスによって成形し
て得られる。A multilayer wiring board made of glass cloth epoxy, glass cloth polyimide, or the like has a structure in which glass cloth is impregnated with resin, and a plurality of copper foils serving as conductor layers are laminated via the resin layers. The method for making it will be described below with reference to Figure 1. After impregnating epoxy resin, polyimide resin, etc. into a reinforcing base material such as cloth made of fibers made of glass etc.
Dry and prepare prepreg 2. This prepreg 2
It is obtained by cutting one or more sheets into a predetermined size, stacking one or more sheets together with the inner layer circuit 3 and the copper foil 1, and molding by hot pressing.
回路基板用補強基材の種類としては、ガラスクロス、ガ
ラスペーパー、ガラスマット、ガラスフェルト、紙、高
耐熱ポリアミドペーパー、アラミド繊維クロス等が使用
されている。Examples of reinforcing base materials for circuit boards include glass cloth, glass paper, glass mat, glass felt, paper, high heat-resistant polyamide paper, and aramid fiber cloth.
（発明が解決しようとする課題）
前述したように、現在高速化に対して多層配線基板用樹
脂としては、ポリイミド、エポキシ樹脂が主に使用され
ているが、これらの樹脂の誘電率は、３．５〜４．５で
ある。また、補強材として用いられるガラスクロスのガ
ラス骨材の誘電率は成分中の石英（８１０２）の比率が
増すほど誘電率は低くなる。すなわちＳｉＯ２の割合が
９９．９７％のシリカガラス（Ｑガラス）の誘電率は、
３．９であり、成分中の８１０２の割合が７３％のＤガ
ラスの誘電率は、４．６で、成分中の５ｉ０２の割合が
５４％のＥガラスで７．２程度である。これらの材料を
組み合わせて前述した方法にて、配線基板とするが、出
来上がった基板の誘電率は、４〜４．５となっているの
が現状である。従って、これらの多層配線基板にＬＳＩ
を実装した場合、高速演算時および高周波通信時の遅延
時間が長くなるという欠点がある。即ち、多層配線基板
を含めた導体内の電気信号伝播速度Ｖは、次式で示され
る。(Problems to be Solved by the Invention) As mentioned above, polyimide and epoxy resins are currently mainly used as resins for multilayer wiring boards to achieve higher speeds, but the dielectric constant of these resins is 3. .5 to 4.5. Further, the dielectric constant of the glass aggregate of the glass cloth used as a reinforcing material becomes lower as the proportion of quartz (8102) in the component increases. In other words, the dielectric constant of silica glass (Q glass) with a SiO2 ratio of 99.97% is
The dielectric constant of D glass in which the proportion of 8102 in the composition is 73% is 4.6, and the dielectric constant of E glass in which the proportion of 5i02 in the composition is 54% is about 7.2. These materials are combined to form a wiring board using the method described above, and the dielectric constant of the finished board is currently 4 to 4.5. Therefore, LSIs are installed on these multilayer wiring boards.
When implemented, there is a drawback that the delay time during high-speed calculation and high-frequency communication becomes long. That is, the electric signal propagation velocity V in a conductor including a multilayer wiring board is expressed by the following equation.
即ち、誘電率εが小さいほど、電気信号伝播速度■が速
くなり、高速演算が実現できる。That is, the smaller the dielectric constant ε, the faster the electrical signal propagation speed (■) becomes, and high-speed calculation can be realized.
なお誘電率は、ＡＳＴＭ Ｄ１５０の測定方法において
、１０Ｈｚの周波数での値を用いる。Note that for the dielectric constant, a value at a frequency of 10 Hz is used in the ASTM D150 measurement method.
（課題を解決するための手段）
前述したように、コンピュータ等の高速化に対して、多
層配線基板は、誘電率４〜４．５と大きいため遅延時間
が大きく、高速化への律速となっている。この律速を解
決するために鋭意工夫を行った。その結果、本発明の多
層配線基板は、誘電率が２．６の低誘電率樹脂であるベ
ンゾシクロブテンを補強機材に含侵させた後プリプレグ
を作成し、複数の導体層をプリプレグを介して積層した
構造となっているので、低誘電率配線基板を容易に得ら
れることができる。(Means for Solving the Problem) As mentioned above, multilayer wiring boards have a large dielectric constant of 4 to 4.5, which is a large delay time, and are the limiting factor in speeding up computers. ing. We worked hard to solve this rate-limiting problem. As a result, the multilayer wiring board of the present invention is produced by impregnating reinforcing material with benzocyclobutene, which is a low dielectric constant resin with a dielectric constant of 2.6, creating a prepreg, and then connecting multiple conductor layers through the prepreg. Since it has a laminated structure, a low dielectric constant wiring board can be easily obtained.
（実施例１）
以下、実施例により本発明の低誘電率配線基板について
具体的に説明するが、本発明は、これら実施例に限定さ
れるものではない。(Example 1) Hereinafter, the low dielectric constant wiring board of the present invention will be specifically explained with reference to Examples, but the present invention is not limited to these Examples.
４０％濃度のベンゾシクロブテンのジメチルフォルムア
ミド溶液を、成分中の８ｉ０２の割合が７３％で誘電率
が４．６のＤガラス（日本電気硝子社製）より成る厚さ
０．１５ｍｍのクロスに含侵させ、８０°Ｃで乾燥し、
プリプレグを得た。このプリプレグ３枚を積層し、更に
その最上面及び最下面にそれぞれ４０ｐｍの銅箔をを配
置し、これらを熱板の間に入れ、温度２５０°Ｃ１圧力
３０ｋｇ／ｃｍの条件で１０時間加熱加圧して、積層体
を形成した。このものの誘電率は、３．４であった。A dimethylformamide solution of benzocyclobutene at a concentration of 40% was placed on a 0.15 mm thick cloth made of D glass (manufactured by Nippon Electric Glass Co., Ltd.) with a dielectric constant of 4.6 and a proportion of 8i02 in the component of 73%. impregnated and dried at 80°C,
Got prepreg. These three sheets of prepreg were laminated, copper foil of 40 pm was placed on each of the top and bottom surfaces, and these were placed between hot plates and heated and pressed at a temperature of 250°C and a pressure of 30 kg/cm for 10 hours. , a laminate was formed. The dielectric constant of this material was 3.4.
（比較例１）
４５％濃度のポリイミド（日本ポリイミド社製ケルイミ
ド６０工（商品名〕）のＮ−メチルピロリドン溶液を、
成分中の８１０２の割合が７３％で誘電率が４．６のＤ
ガラス日本電気硝子社製）より成る厚さ０．１５ｍｍの
クロスに含侵させ、１２０°Ｃで乾燥し、プリプレグを
得た。(Comparative Example 1) An N-methylpyrrolidone solution of polyimide (Kelimide 60 (trade name) manufactured by Nippon Polyimide Co., Ltd.) with a concentration of 45% was
D with a proportion of 8102 in the component of 73% and a dielectric constant of 4.6
A cloth with a thickness of 0.15 mm made of glass (manufactured by Nippon Electric Glass Co., Ltd.) was impregnated and dried at 120°C to obtain a prepreg.
このプリプレグ３枚を積層し、更にその最上面及び最下
面にそれぞれ４０ｐｍの銅箔をを配置し、これらを熱板
の間に入れ、温度１８０°Ｃ１圧力５０ｋｇ／ｃｍの条
件で１時間、更に温度２５０°Ｃ１圧力５０ｋｇ／ｃｍ
の条件で２４時間加熱加圧して、積層体を形成した。こ
のものの誘電率は、４．５であった。These three prepreg sheets were laminated, copper foil of 40 pm was placed on each of the top and bottom surfaces, and these were placed between hot plates for 1 hour at a temperature of 180°C and a pressure of 50 kg/cm. °C1 pressure 50kg/cm
A laminate was formed by heating and pressurizing for 24 hours under these conditions. The dielectric constant of this material was 4.5.
（実施例２）
３０％濃度のベンゾシクロブテンのヘキサン溶液を、成
分中の８ｉ０の割合が９９．９９９％で誘電率が３．８
のシリカガラス（旭硝子社製）より成る厚さ０．１ｍｍ
のクロスに含侵させ、６０’Ｃで乾燥し、プリプレグを
得た。このプリプレグ３枚を積層し、更にその最上面及
び最下面にそれぞれ４０１ｍの銅箔をを配置し、これら
を熱板の間に入れ、温度２５０°Ｃ１圧力３０ｋｇ／ｃ
ｍの条件で５時間加熱加圧して、積層体を形成した。こ
のものの誘電率は、２．９であった。(Example 2) A hexane solution of benzocyclobutene at a concentration of 30% was prepared with a dielectric constant of 3.8 and a proportion of 8i0 in the components of 99.999%.
0.1 mm thick made of silica glass (manufactured by Asahi Glass Co., Ltd.)
A prepreg was obtained by impregnating a cloth with the resin and drying at 60'C. These three sheets of prepreg were laminated, and 401 m of copper foil was placed on each of the top and bottom surfaces, and these were placed between hot plates at a temperature of 250°C and a pressure of 30kg/c.
A laminate was formed by heating and pressurizing for 5 hours under the conditions of m. The dielectric constant of this material was 2.9.
（比較例２）
４０％濃度のポリイミド（日本ポリイミド社製ケルイミ
ド６０１（商品名））のＮ−メチルピロリドン溶液を、
成分中の８１０２の割合が９９．９９９％で誘電率が３
．８のシリカガラス（旭硝子社製）より成る厚さ０．１
ｍｍのクロスに含侵させ、１２０°Ｃで乾燥し、プリプ
レグを得た。このプリプレグ３枚を積層し、更にその最
上面及び最下面にそれぞれ４０μｍの銅箔をを配置し、
これらを熱板の間に入れ、温度１８０°Ｃ１圧力５０ｋ
ｇ／ｃｍ２の条件で１時間、更に温度２５０°Ｃ１圧力
５０ｋｇ／ｃｍの条件で２４時間加熱加圧して、積層体
を形成した。(Comparative Example 2) An N-methylpyrrolidone solution of polyimide (Kelimide 601 (trade name) manufactured by Nippon Polyimide Co., Ltd.) at a concentration of 40% was
The proportion of 8102 in the component is 99.999% and the dielectric constant is 3.
．． Made of No. 8 silica glass (manufactured by Asahi Glass Co., Ltd.) with a thickness of 0.1
A prepreg was obtained by impregnating a cloth with a diameter of 1.0 mm and drying at 120°C. These three sheets of prepreg are laminated, and copper foil of 40 μm is placed on the top and bottom surfaces respectively.
Place these between hot plates, temperature 180°C, pressure 50k.
A laminate was formed by heating and pressing for 1 hour at a temperature of 250° C. and a pressure of 50 kg/cm 2 for 24 hours.
このものの誘電率は、４．１であった。The dielectric constant of this material was 4.1.
（発明の効果）
以上説明したように、本発明の多層配線基板は、低誘電
率の樹脂であるベンゾシクロブテンを用いているので、
従来の多層配線基板に比べて誘電率が低くなり、コンピ
ュータ等の電気信号伝播の遅延時間を短くできる効果が
ある。(Effects of the Invention) As explained above, since the multilayer wiring board of the present invention uses benzocyclobutene, which is a low dielectric constant resin,
It has a lower dielectric constant than conventional multilayer wiring boards, and has the effect of shortening the delay time of electrical signal propagation in computers and the like.
同時に、ベンゾシクロブテンは、低吸湿性の樹脂である
ため、マイグレーションに対しても非常に効果的である
。At the same time, since benzocyclobutene is a low hygroscopic resin, it is very effective against migration.
第１図は、多層配線基板の構成の一例を示す図である。
図において、１・・・銅箔、２・・・プリプレグ、３・
・・内層回路。FIG. 1 is a diagram showing an example of the configuration of a multilayer wiring board. In the figure, 1... copper foil, 2... prepreg, 3...
...Inner layer circuit.
Claims (2)
脂層を形成し、複数の導体層を上記ベンゾシクロブテン
樹脂層を介して積層したことを特徴とする低誘電率配線
基板。(1) A low dielectric constant wiring board characterized in that a reinforcing base material is impregnated with benzocyclobutene resin to form a resin layer, and a plurality of conductor layers are laminated with the benzocyclobutene resin layer interposed therebetween.
第１項記載の低誘電率配線基板。(2) A low dielectric constant wiring board according to claim 1, wherein the reinforcing base material is made of silica glass.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29929790A JP2906644B2 (en) | 1990-11-05 | 1990-11-05 | Low dielectric constant wiring board |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29929790A JP2906644B2 (en) | 1990-11-05 | 1990-11-05 | Low dielectric constant wiring board |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04171796A true JPH04171796A (en) | 1992-06-18 |
| JP2906644B2 JP2906644B2 (en) | 1999-06-21 |
Family
ID=17870709
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP29929790A Expired - Fee Related JP2906644B2 (en) | 1990-11-05 | 1990-11-05 | Low dielectric constant wiring board |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2906644B2 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07161867A (en) * | 1993-12-10 | 1995-06-23 | Nec Corp | Semiconductor package |
| WO2001058230A1 (en) * | 2000-02-02 | 2001-08-09 | The Dow Chemical Company | Toughened benzocyclobutene based polymers and their use in building-up printed wiring boards |
| JP2003064268A (en) * | 2001-08-23 | 2003-03-05 | Sumitomo Bakelite Co Ltd | Resin composition, copper foil with resin and multilayer printed circuit board |
| WO2019065942A1 (en) * | 2017-09-29 | 2019-04-04 | パナソニックＩｐマネジメント株式会社 | Prepreg, and metal-clad laminated board and wiring substrate obtained using same |
| CN112029241A (en) * | 2020-08-26 | 2020-12-04 | 中国航空工业集团公司济南特种结构研究所 | Preparation method of low-dielectric high-temperature-resistant benzocyclobutene resin composite material |
-
1990
- 1990-11-05 JP JP29929790A patent/JP2906644B2/en not_active Expired - Fee Related
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07161867A (en) * | 1993-12-10 | 1995-06-23 | Nec Corp | Semiconductor package |
| WO2001058230A1 (en) * | 2000-02-02 | 2001-08-09 | The Dow Chemical Company | Toughened benzocyclobutene based polymers and their use in building-up printed wiring boards |
| US6420093B1 (en) | 2000-02-02 | 2002-07-16 | The Dow Chemical Company | Toughened benzocyclobutene based polymers and their use in building-up printed wiring boards |
| US6670101B2 (en) | 2000-02-02 | 2003-12-30 | Dow Global Technologies Inc. | Toughened benzocyclobutene based polymers and their use in building-up printed wiring boards |
| JP2003064268A (en) * | 2001-08-23 | 2003-03-05 | Sumitomo Bakelite Co Ltd | Resin composition, copper foil with resin and multilayer printed circuit board |
| WO2019065942A1 (en) * | 2017-09-29 | 2019-04-04 | パナソニックＩｐマネジメント株式会社 | Prepreg, and metal-clad laminated board and wiring substrate obtained using same |
| JPWO2019065942A1 (en) * | 2017-09-29 | 2020-10-22 | パナソニックＩｐマネジメント株式会社 | Prepreg, and metal-clad laminates and wiring boards using it |
| CN112029241A (en) * | 2020-08-26 | 2020-12-04 | 中国航空工业集团公司济南特种结构研究所 | Preparation method of low-dielectric high-temperature-resistant benzocyclobutene resin composite material |
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|---|---|
| JP2906644B2 (en) | 1999-06-21 |
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