JPH04152512A - Wafer chuck - Google Patents
Wafer chuckInfo
- Publication number
- JPH04152512A JPH04152512A JP2276942A JP27694290A JPH04152512A JP H04152512 A JPH04152512 A JP H04152512A JP 2276942 A JP2276942 A JP 2276942A JP 27694290 A JP27694290 A JP 27694290A JP H04152512 A JPH04152512 A JP H04152512A
- Authority
- JP
- Japan
- Prior art keywords
- chuck
- wafer
- upper chuck
- substrate
- orientation flat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 26
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 7
- 239000010703 silicon Substances 0.000 claims abstract description 7
- 239000002184 metal Substances 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 235000012431 wafers Nutrition 0.000 description 57
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000010949 copper Substances 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Description
【発明の詳細な説明】
〔概要〕
本発明は、縮小投影露光装置において、ウェハを保持す
るステージチャックの構造に関し。DETAILED DESCRIPTION OF THE INVENTION [Summary] The present invention relates to a structure of a stage chuck for holding a wafer in a reduction projection exposure apparatus.
縮小投影露光時のウェハの焦点ずれを減少することを目
的とし。The purpose is to reduce wafer defocus during reduced projection exposure.
■上部チャックと下部チャックとを有し、該上部チャッ
クはオリエンテーションフラット部を有する基板からな
り、エツチングにて、外縁と様々な形状の凸部を残して
凹部を形成し、該凹部にウェハ吸着孔を設けたものであ
り、該下部チャックは、内部に上部チャック吸着孔、並
びにウェハ吸着孔を有するものであり、該下部チャック
上に該上部チャック及び該ウェハを真空吸着する機構を
有するように。■It has an upper chuck and a lower chuck, and the upper chuck is made of a substrate with an orientation flat part, and by etching, a concave part is formed leaving an outer edge and convex parts of various shapes, and a wafer suction hole is formed in the concave part. The lower chuck has an upper chuck suction hole and a wafer suction hole therein, and has a mechanism for vacuum suctioning the upper chuck and the wafer onto the lower chuck.
■上部チャックと下部チャックとを有し、該上部チャッ
クはオリエンテーションフラット部を有する基板からな
り、エツチングにて、外縁と様々な形状の凸部を残して
凹部を形成し、該凹部にウェハ吸着孔を設け、且つウェ
ハをピンにより該上部チャック上にオリエンテーション
フラット部を合わせて固定したものであり、該下部チャ
ックは。■It has an upper chuck and a lower chuck, and the upper chuck is made of a substrate with an orientation flat part, and by etching, a concave part is formed leaving an outer edge and convex parts of various shapes, and a wafer suction hole is formed in the concave part. and the wafer is fixed onto the upper chuck with the orientation flat part aligned with the pin, and the lower chuck is the lower chuck.
内部に吸着孔を有するものであり、該下部チャック上に
該上部チャックを真空吸着する機構を有するように。It has a suction hole inside and has a mechanism for vacuum suctioning the upper chuck onto the lower chuck.
■基板がシリコンウェハからなるように。■The substrate is made of silicon wafer.
■基板が金属からなるように構成する。■Configure the substrate to be made of metal.
本発明は、縮小投影露光装置において、ウェハを保持す
るステージチャックの構造に関する。The present invention relates to the structure of a stage chuck for holding a wafer in a reduction projection exposure apparatus.
近年、半導体デバイスの高集積化、超微細化にともない
、フォトプロセスパターンのサブミクロンサイズでの処
理も本格化し、焦点深度の幅の挟まりに対応した投影露
光の被投影基板であるウェハの平坦度が、焦点ずれを防
止するためにより重要となってきた。このため、ウェハ
の平坦度を保持するウェハチャックが必要となる。In recent years, as semiconductor devices have become highly integrated and ultra-fine, the processing of photoprocess patterns at submicron sizes has become a serious issue, and the flatness of wafers, which are the target substrates for projection exposure, has increased to accommodate the narrow range of depth of focus. However, it has become more important to prevent defocus. Therefore, a wafer chuck that maintains the flatness of the wafer is required.
第５図は従来例の説明図である。 FIG. 5 is an explanatory diagram of a conventional example.
図において、１５はウェハ、 １６はウェハチャック。In the figure, 15 is a wafer, and 16 is a wafer chuck.
１７はオリエンテーションフラット部である。17 is an orientation flat portion.
従来から投影露光装置では、マスクやレヂクルを通して
光源からの照射光がウェハ基板上に精密に投影されるが
、非常に微細なパターンでは、わずかの焦点ずれでもぼ
けてしまい、ウェハの平坦度が重要となってくる。Traditionally, in projection exposure equipment, irradiated light from a light source is precisely projected onto a wafer substrate through a mask or a resicle, but with very fine patterns, even the slightest deviation from focus can blur the image, making wafer flatness important. It becomes.
第５図（ａ）に示すように、ウェハの平坦度は。As shown in FIG. 5(a), the flatness of the wafer is.
その上に絶縁膜や金属膜が何度も被覆されるにつれ、ま
た、熱処理が加わる度に反りが大きくなってくる。甚だ
しい時には、ウェハの厚さの３０％程度の反りが生ずる
。As an insulating film or a metal film is coated over it many times, and each time heat treatment is applied, the warpage increases. In severe cases, warping of about 30% of the wafer thickness occurs.
そのため、微細パターンのように焦点深度が浅い物はど
、焦点ずれを起こし易い。Therefore, objects with a shallow depth of focus, such as fine patterns, are likely to be out of focus.
そのために、第５図（ｂ）に示すように、ステージ上に
ウェハチャック１６を設置して、その上に露光するウェ
ハ１５を載せ、真空吸着により強制的に平坦度を改善し
て、第５図（ｄ）、（ｅ）のように焦点深度内に辛うじ
て入れていた。For this purpose, as shown in FIG. 5(b), a wafer chuck 16 is installed on the stage, the wafer 15 to be exposed is placed on it, and the flatness is forcibly improved by vacuum suction. As shown in Figures (d) and (e), it was barely within the depth of focus.
しかし、ウェハ１５のオリエンテーションフラット部１
７は反りが矯正しに＜＜、第５図（ｆ）に示すように、
この部分が焦点ぼけとなる。However, the orientation flat portion 1 of the wafer 15
7 is for correcting the warp<<, as shown in Fig. 5(f),
This part becomes out of focus.
このように、ステッパ等のウェハチャック１６は高い平
坦度と、ウェハ１５を吸着して反ったウェハ１５を平坦
に矯正する大きな力を必要とする。As described above, the wafer chuck 16 such as a stepper requires a high degree of flatness and a large force for sucking the wafer 15 and straightening the warped wafer 15 flat.
上記のように、オリエンテーションフラットの部分は歪
みが入り易く、平坦の矯正がしにクク。As mentioned above, the orientation flat part is prone to distortion, and it is difficult to correct the flatness.
局所的な焦点ずれが発生しやすい個所である。This is a location where local defocus is likely to occur.
また、ウェハとウェハチャックの間に微細なごみ等が挟
まったり、ウェハチャックそのものが欠けても１局所的
な焦点ずれが発生する。Moreover, if fine dust or the like is caught between the wafer and the wafer chuck, or if the wafer chuck itself is chipped, a local defocus will occur.
本発明は、このような、ステージチャックの平坦度をよ
り改善する方法を得ることを目的として提供されるもの
である。The present invention is provided for the purpose of providing a method for further improving the flatness of a stage chuck.
〔課題を解決するための手段〕
第１図は本発明の原理説明図、第２図は本発明の上部チ
ャックの作成例（そのｌ）、第３図は本発明の上部チャ
ックの作成例（その２）、第４図は本発明の下部チャッ
クの作成例である。[Means for Solving the Problems] Fig. 1 is an explanatory diagram of the principle of the present invention, Fig. 2 is an example of fabrication of the upper chuck of the present invention (Part 1), and Fig. 3 is an example of fabrication of the upper chuck of the present invention (Part 1). Part 2), FIG. 4 is an example of the production of the lower chuck of the present invention.
図において、１は上部チャック、２は下部チャック、３
はウェハチャック、４は外縁、５はオリエンチージョン
フラット部、６は凸部、７は凹部。In the figure, 1 is the upper chuck, 2 is the lower chuck, and 3 is the upper chuck.
is a wafer chuck, 4 is an outer edge, 5 is an orientation flat portion, 6 is a convex portion, and 7 is a concave portion.
８はウェハ吸着孔、９は上部チャック吸着孔、 １０は
ウェハ吸着パイプ、１１は上部チャック吸着パイプ、１
２は基板、１３は吸着パイプ、１４はピンである。8 is a wafer suction hole, 9 is an upper chuck suction hole, 10 is a wafer suction pipe, 11 is an upper chuck suction pipe, 1
2 is a substrate, 13 is a suction pipe, and 14 is a pin.
載置するシリコンウェハ基板と同じ形並びにサイズの基
板工２を用いて、ウェハチャック３の上部チャック１を
形成する。The upper chuck 1 of the wafer chuck 3 is formed using a substrate machining tool 2 having the same shape and size as the silicon wafer substrate to be placed.
そして、そのウェハチャック３は下部チャック２より上
部チャック１が脱着可能な二重構造とし。The wafer chuck 3 has a double structure in which the upper chuck 1 is detachable from the lower chuck 2.
上部チャックｌの破損等に対して、速やかに上部チャッ
クを交換できる構造とする。The structure is such that the upper chuck can be quickly replaced in case of damage to the upper chuck.
即ち３本発明の目的は、第１図に示すように。That is, three objects of the present invention are as shown in FIG.
上部チャックｌと下部チャック２とを有し、該上部チャ
ック１はオリエンテーションフラット部５を有する基板
１２からなり、エツチングにて、外縁４と様々な形状の
凸部６を残して凹部７を形成し。It has an upper chuck 1 and a lower chuck 2, and the upper chuck 1 is made of a substrate 12 having an orientation flat part 5, and is etched to form a concave part 7 while leaving an outer edge 4 and convex parts 6 of various shapes. .
該凹部７にウェハ吸着孔８を設けたものであり。A wafer suction hole 8 is provided in the recess 7.
該下部チャック２は、内部に上部チャック吸着孔９．並
びにウェハ吸着孔８を有するものであり。The lower chuck 2 has an upper chuck suction hole 9 inside. It also has a wafer suction hole 8.
該下部チャック２上に該上部チャック１及び該ウェハ１
２を真空吸着する機構を有することにより。The upper chuck 1 and the wafer 1 are placed on the lower chuck 2.
By having a mechanism for vacuum adsorption of 2.
或いは、第２図に示すように、上部チャック１と下部チ
ャック２とを有し、該上部チャックｌはオリエンテーシ
ョンフラット部５を有する基板１２からなり、エツチン
グにて、外縁４と様々な形状の凸部６を残して凹部７を
形成し、該凹部７にウェハ吸着孔８を設け、且つウェハ
１２をピン１４により該上部チャック１上にオリエンテ
ーションフラット部５を合わせて固定したものであり。Alternatively, as shown in FIG. 2, it has an upper chuck 1 and a lower chuck 2, and the upper chuck 1 is made of a substrate 12 having an orientation flat part 5, and is etched to form protrusions of various shapes on the outer edge 4. A recess 7 is formed leaving the recess 6, a wafer suction hole 8 is provided in the recess 7, and the wafer 12 is fixed onto the upper chuck 1 with the orientation flat part 5 using pins 14.
該下部チャック２は、内部に吸着孔１３を有するもので
あり。The lower chuck 2 has suction holes 13 inside.
該下部チャック２上に該上部チャックｌを真空吸着する
機構を有することにより。By having a mechanism for vacuum suctioning the upper chuck 1 onto the lower chuck 2.
また、基板１２がシリコンウェハからなることにより。Further, the substrate 12 is made of a silicon wafer.
更に、基板１２が金属からなることにより達成される。Furthermore, this is achieved because the substrate 12 is made of metal.
本発明のウェハチャックの内、脱着可能な上部チャック
は２元の基板での平坦度が保証されていればフォトエツ
チングにて容易に加工でき、またエツチングでチャック
を作るために、ウェハ保持の接点模様を自由に設定する
ことができる。Of the wafer chucks of the present invention, the removable upper chuck can be easily processed by photo-etching as long as the flatness of the two original substrates is guaranteed. You can freely set the pattern.
第２図は本発明の上部チャックの作成例（その１）、第
３図は本発明の上部チャックの作成例（その２）、第４
図は本発明の下部チャックの作成例である。Fig. 2 shows an example of making the upper chuck of the present invention (Part 1), Fig. 3 shows an example of making the upper chuck of the present invention (Part 2), and Fig. 4 shows the example of making the upper chuck of the present invention (Part 2).
The figure shows an example of making the lower chuck of the present invention.
第２図（ａ）に示すように１本発明の一実施例として１
ｗ＆置するウェハと同じサイズの平坦度を保証したフラ
ットなウェハ基板１２を用い、フォトエツチングのみで
熱処理や器械加工等のストレスを与えずに上部チャック
１の外縁４と凸部６を残して、凹部７を作成することが
できる。As shown in FIG. 2(a), as an embodiment of the present invention, 1
Using a flat wafer substrate 12 that guarantees flatness of the same size as the wafer to be placed, photoetching is performed only without applying stress such as heat treatment or mechanical processing, leaving the outer edge 4 and convex portion 6 of the upper chuck 1. A recess 7 can be created.
第２図（ｂ）に断面図、（Ｃ）に平面図で示すように、
ｉ置するウェハとの接点はごみをはさまないように小さ
くシ、真空吸着による歪みがないように、出来るだけ点
対象模様の凸部６を設定する。できれば、下部チャック
２の接点を反転した模様、即ち下部チャック２の接点と
接触する構造が良い。As shown in the cross-sectional view in Fig. 2(b) and the plan view in Fig. 2(C),
The contact point with the wafer to be placed is made small so as not to trap dust, and the convex portion 6 is set in a point-symmetrical pattern as much as possible to avoid distortion due to vacuum suction. If possible, a structure in which the contact points of the lower chuck 2 are reversed, that is, a structure in which the contact points of the lower chuck 2 are in contact with each other, is preferable.
そして、第２図（ｄ）に示すように、上部チャック１に
載置するウェハを真空吸着するためのウェハ吸着孔を凹
部７にエツチングにより形成する。Then, as shown in FIG. 2(d), a wafer suction hole for vacuum suction of the wafer placed on the upper chuck 1 is formed in the recess 7 by etching.
また、上部チャック１の凸部６の他の作成例を第３図に
示す。Further, another example of making the convex portion 6 of the upper chuck 1 is shown in FIG.
下部チャック２は既存のウェハチャックと同じと考えて
良いが、ウェハが常時載置されているわけではなく、上
部チャックｌそのものは平坦度が保証されているので、
上部チャックｌとの保持接触面積はなるべく大きく取る
。The lower chuck 2 can be considered to be the same as the existing wafer chuck, but the wafer is not always placed on it, and the flatness of the upper chuck 1 itself is guaranteed.
The holding contact area with the upper chuck 1 should be as large as possible.
載置するウェハと上部チャックｌを共に真空で吸着する
場合は２系列の真空を用意する。If the wafer to be placed and the upper chuck l are both vacuum-adsorbed, two vacuum systems are prepared.
第４図に示すように、上部チャックｌをピン１４で下部
チャック２に位置決め固定する場合には。As shown in FIG. 4, when the upper chuck l is positioned and fixed to the lower chuck 2 with the pin 14.
上部チャックｌにストレスを与えてはならず、締めつけ
ないことである。Do not apply stress to the upper chuck l and do not tighten it.
実際の固定は、吸着パイプ１３により、上部チャツク吸
着孔９からの真空吸着で、下部チャック２に上部チャッ
ク１の固定が行われる。In actual fixing, the upper chuck 1 is fixed to the lower chuck 2 by vacuum suction from the upper chuck suction hole 9 using the suction pipe 13.
以上、上部チャック１の基板１２として、シリコンのウ
ェハを例にとり説明したが、簡単にフォトエツチングの
行なえ、耐久性があり、破損しにくく、安価な金属の基
板９例えば、鉄（Ｆｅ）、銅（Ｃｕ）やアルミニウム（
八ｌ）も使用することができる。The above description has been made using a silicon wafer as an example of the substrate 12 of the upper chuck 1, but a metal substrate 9 that can be easily photoetched, is durable, hard to break, and is inexpensive, such as iron (Fe), copper, etc. (Cu) and aluminum (
8l) can also be used.
以上説明した様に１本発明によれば、シリコンウェハ等
の平坦度の良好な基板を用いて、ウェハチャックと載置
ウェハとの接触部を自由に設計できるため、簡単に、し
かも安価に上部チャックが製作できる。As explained above, according to the present invention, the contact area between the wafer chuck and the placed wafer can be freely designed using a substrate with good flatness such as a silicon wafer, so that the upper Chucks can be made.
また、載置ウェハと同一形状のため、オリエンテーショ
ンフラット部分の吸着矯正力が大きく。Also, since it has the same shape as the wafer it is placed on, the suction correction force on the orientation flat part is large.
歪みが入らずに載置ウェハの平坦度が精密に矯正できる
。The flatness of the placed wafer can be precisely corrected without distortion.
そして、上部チャック破損時に、交換修理が容易であり
、コスト低減、メンテナンス時間の節減等の効果が大き
い。In addition, when the upper chuck is damaged, it is easy to replace and repair it, which has great effects such as cost reduction and maintenance time savings.
第１図は本発明の原理説明図。
第２図は本発明の上部チャックの作成例（その１）。
第３図は本発明の上部チャックの作成例（その第４図は
本発明の下部チャックの作成例。
第５図は従来例の説明図
である。
図において。
■は上部チャック、 ２は下部チャック。
３はウェハチャック、４は外縁。
５はオリエンテーションフラット部。
６は凸部、 ７は凹部。
８はウェハ吸着孔、 ９は上部チャック吸着孔。
１０はウェハ吸着パイプ。
１１は上部チャック吸着パイプ。
１２は基板、 １３は吸着パイプ。
１４はビン
／ｆ：発８月の上部チャ・７７Ｍρべ脅＋１（”２／）
ｆ）１２ 口
不発Ｂ月ｎ上訃チャ・７７川トベ今１（イθ２）９
４ 「FIG. 1 is a diagram explaining the principle of the present invention. FIG. 2 is an example (No. 1) of making the upper chuck of the present invention. Fig. 3 is an example of making an upper chuck of the present invention (Fig. 4 is an example of making a lower chuck of the present invention. Fig. 5 is an explanatory diagram of a conventional example. In the figure, ■ is an upper chuck, 2 is a lower chuck) Chuck. 3 is the wafer chuck, 4 is the outer edge. 5 is the orientation flat part. 6 is the convex part, 7 is the concave part. 8 is the wafer suction hole, 9 is the upper chuck suction hole. 10 is the wafer suction pipe. 11 is the upper chuck suction Pipe. 12 is the board, 13 is the suction pipe. 14 is the bottle/f: upper part of the upper chamber in August, 77Mρbe threat +1 ("2/)
f) 12 mouth failure B month n upper death cha 77 river tobe now 1 (a θ2) 9
4 ``
Claims (1)
、該上部チャック（１）はオリエンテーションフラット
部（５）を有する基板（１２）からなり、エッチングに
て、外縁（４）と様々な形状の凸部（６）を残して凹部
（７）を形成し、該凹部（７）にウェハ吸着孔（８）を
設けたものであり、 該下部チャック（２）は、内部に上部チャック吸着孔（
９）、並びにウェハ吸着孔（８）を有するものであり、
該下部チャック（２）上に該上部チャック（１）及びウ
ェハを真空吸着する機構を有することを特徴とするウェ
ハチャック。 ２）上部チャック（１）と下部チャック（２）とを有し
、該上部チャック（１）はオリエンテーションフラット
部（５）を有する基板（１２）からなり、エッチングに
て、外縁（４）と様々な形状の凸部（６）を残して凹部
（７）を形成し、該凹部（７）にウェハ吸着孔（８）を
設け、且つウェハをピン（１４）により該上部チャック
（１）上にオリエンテーションフラット部（５）を合わ
せて固定したものであり、 該下部チャック（２）は、内部に吸着パイプ（１３）を
有するものであり、 該下部チャック（２）上に該上部チャック（１）を真空
吸着する機構を有することを特徴とするウェハチャック
。 ３）基板（１２）がシリコンウェハからなることを特徴
とする請求項１或いは２記載のウェハチャック。 ４）基板（１２）が金属からなることを特徴とする請求
項１或いは２記載のウェハチャック。[Claims] 1) It has an upper chuck (1) and a lower chuck (2), the upper chuck (1) is made of a substrate (12) having an orientation flat part (5), and is etched to A recess (7) is formed leaving an outer edge (4) and protrusions (6) of various shapes, and a wafer suction hole (8) is provided in the recess (7), and the lower chuck (2) has an upper chuck suction hole inside (
9), and a wafer suction hole (8),
A wafer chuck characterized by having a mechanism for vacuum suctioning the upper chuck (1) and the wafer onto the lower chuck (2). 2) having an upper chuck (1) and a lower chuck (2), the upper chuck (1) consisting of a substrate (12) with an orientation flat (5), etched with various A concave part (7) is formed leaving a convex part (6) of a similar shape, a wafer suction hole (8) is provided in the concave part (7), and the wafer is placed on the upper chuck (1) with a pin (14). The orientation flat part (5) is aligned and fixed, the lower chuck (2) has a suction pipe (13) inside, and the upper chuck (1) is placed on the lower chuck (2). A wafer chuck characterized by having a mechanism for vacuum suction. 3) The wafer chuck according to claim 1 or 2, characterized in that the substrate (12) is made of a silicon wafer. 4) The wafer chuck according to claim 1 or 2, wherein the substrate (12) is made of metal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2276942A JPH04152512A (en) | 1990-10-16 | 1990-10-16 | Wafer chuck |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2276942A JPH04152512A (en) | 1990-10-16 | 1990-10-16 | Wafer chuck |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04152512A true JPH04152512A (en) | 1992-05-26 |
Family
ID=17576560
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2276942A Pending JPH04152512A (en) | 1990-10-16 | 1990-10-16 | Wafer chuck |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04152512A (en) |
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-
1990
- 1990-10-16 JP JP2276942A patent/JPH04152512A/en active Pending
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