JPH04132909A - Size measuring apparatus with electron beam - Google Patents
Size measuring apparatus with electron beamInfo
- Publication number
- JPH04132909A JPH04132909A JP25836990A JP25836990A JPH04132909A JP H04132909 A JPH04132909 A JP H04132909A JP 25836990 A JP25836990 A JP 25836990A JP 25836990 A JP25836990 A JP 25836990A JP H04132909 A JPH04132909 A JP H04132909A
- Authority
- JP
- Japan
- Prior art keywords
- sample
- electron beam
- pattern
- signal
- scanning
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000010894 electron beam technology Methods 0.000 title claims abstract description 55
- 238000005259 measurement Methods 0.000 claims description 11
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 claims description 6
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 230000003287 optical effect Effects 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 6
- 238000010586 diagram Methods 0.000 description 10
- 230000000694 effects Effects 0.000 description 7
- 238000012545 processing Methods 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 3
- 238000003708 edge detection Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000012935 Averaging Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000386 microscopy Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は半導体ウェハ上に形成された微細パターンの
線幅等を測長する電子ビーム寸法測定装置に関し、特に
その高精度化に関するものである。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to an electron beam dimension measuring device for measuring the line width, etc. of a fine pattern formed on a semiconductor wafer, and particularly relates to improving the accuracy thereof. .
第２図（ａ）は、例えば、特公昭５８−２４７２６号公
報等に示された従来の電子ビーム寸法測定装置を示す模
式図であり、図においてｌは電子ビーム発生源、２は電
子ビーム集束レンズ、３は偏向コイル又は電極、４は電
子ビームである。また、５は試料ステージ、６は試料ス
テージ５に載置された試料、７は電子ビーム４により発
生した反射電子、二次電子、Ｘ線等の信号、８は信号７
の検出器、９は検出器８で検出された信号の増幅器であ
る。１ｏは電子ビーム４を偏向器３にて偏向し、試料６
上に電子ビームを走査するための走査信号発生器である
。FIG. 2(a) is a schematic diagram showing a conventional electron beam size measuring device disclosed in, for example, Japanese Patent Publication No. 58-24726. In the figure, l is an electron beam source, and 2 is an electron beam focusing A lens, 3 a deflection coil or electrode, and 4 an electron beam. Further, 5 is a sample stage, 6 is a sample placed on the sample stage 5, 7 is a signal such as reflected electrons, secondary electrons, X-rays, etc. generated by the electron beam 4, and 8 is a signal 7
9 is an amplifier for the signal detected by the detector 8. 1o, the electron beam 4 is deflected by the deflector 3, and the sample 6 is
A scanning signal generator for scanning the electron beam on top.
次に、第２図（ｂ）〜（ｄ）において、この従来技術の
動作原理について説明する。第２図（ｂ）は試料６に電
子ビーム４が入射している場面の断面を示す。Next, the operating principle of this prior art will be explained with reference to FIGS. 2(b) to 2(d). FIG. 2(b) shows a cross section of a scene where the electron beam 4 is incident on the sample 6.
試料６上に形成されたパターン１１の線幅を測定するの
に、電子ビーム４を１２のように走査する。To measure the line width of the pattern 11 formed on the sample 6, the electron beam 4 is scanned as shown at 12.
この時、発生する信号を走査信号に合わせて表示すると
、第２図（Ｃ）のような波形が得られる。この波形信号
（Ｃ）に対し、しきい値処理、最大傾斜処理などのエツ
ジ検出処理を施すことによりパターンエツジを決めて線
幅を決定する。この走査１２をパターン上に二次元的に
行い、信号７を二次元的に表示すると、第２図（ｄ）の
ようにパターンをビーム入射方向から見たごとくのパタ
ーン像１５を走査領域１３内に見ることができる。この
二次元パターン信号像から同様のエツジ検出処理を行っ
て線幅１４を決める。電子ビーム４の走査を一次元でな
く、二次元で行っているのは、パターンのエツジに加工
による凹凸かある場合、これらを平均した結果を得るこ
とができるからであり、測長の再現精度が向上するから
である。この二次元の走査信号は、第２図（ａ）の走査
信号発生器ｌＯで発生されるべきものであるが、その走
査する領域は第２図（ｄ）の示す矩形領域１３である。If the signal generated at this time is displayed in conjunction with the scanning signal, a waveform as shown in FIG. 2(C) will be obtained. This waveform signal (C) is subjected to edge detection processing such as threshold processing and maximum slope processing to determine pattern edges and line widths. When this scanning 12 is performed two-dimensionally on the pattern and the signal 7 is displayed two-dimensionally, a pattern image 15 as seen from the beam incident direction is created within the scanning area 13 as shown in FIG. 2(d). It can be seen in A similar edge detection process is performed from this two-dimensional pattern signal image to determine the line width 14. The reason why the electron beam 4 is scanned in two dimensions instead of one dimension is that if there are irregularities on the edge of the pattern due to processing, it is possible to obtain a result by averaging these, which improves the reproducibility of length measurement. This is because it improves. This two-dimensional scanning signal is to be generated by the scanning signal generator IO shown in FIG. 2(a), but the area to be scanned is the rectangular area 13 shown in FIG. 2(d).
従来装置は試料ステージ５が電子ビーム４の入射方向に
対して垂直に位置しており、第２図（ｂ）に示す測定す
べきパターン１１をビーム４の方向から見るため、第２
図（ｄ）に示すがごとくの像を得ることができ、測定す
べきパターンを正しく測定できる利点がある。しかしな
がら、近年半導体ウェハに形成されるパターンが微細に
なるにつれて測定幅が小さくなり、高精度の測定精度が
要求されるようになってきた。また、パターン幅だけで
な（パターン膜厚も薄くなる傾向にあり、信号強度も小
さくなり特定精度を悪くする方向にある。このため、よ
り以上の信号強度を要する必要があり、従来装置での測
、定か困難になってきた。In the conventional apparatus, the sample stage 5 is located perpendicular to the direction of incidence of the electron beam 4, and in order to view the pattern 11 to be measured shown in FIG. 2(b) from the direction of the beam 4, the second
This method has the advantage of being able to obtain an image as shown in Figure (d) and accurately measuring the pattern to be measured. However, in recent years, as patterns formed on semiconductor wafers have become finer, measurement widths have become smaller, and higher measurement accuracy has become required. In addition, not only the pattern width (pattern film thickness) also tends to become thinner, and the signal strength also decreases, worsening the identification accuracy.For this reason, it is necessary to require higher signal strength, which is difficult to achieve with conventional equipment. It has become difficult to measure and determine.
この発明は上記のような問題点を解消するためになされ
たもので、試料からの反射電子、二次電子、Ｘ線等の信
号強度を高め、高精度な測長をすることができる電子ビ
ーム寸法測定装置を得ることを目的とする。This invention was made to solve the above problems, and it is an electron beam that can increase the signal strength of reflected electrons, secondary electrons, X-rays, etc. from a sample and perform highly accurate length measurements. The purpose is to obtain a dimension measuring device.
さらに、この発明は傾斜した試料上に正しく矩形に電子
ビームを照射することにより、さらに高精度な測長をす
ることができる電子ビーム寸法測定装置を得ることを目
的とする。A further object of the present invention is to provide an electron beam dimension measuring device that can measure a length with even higher accuracy by irradiating an inclined sample with an electron beam in a correct rectangular shape.
第１の発明に係る電子ビーム寸法測定装置は、集束した
電子ビームの入射軸に対し、試料を載置した試料ステー
ジを傾斜させ、反射電子、二次電子、Ｘ線等の信号放出
効率を高め、試料像の信号強度を高くして測長をするよ
うにしたものである。The electron beam dimension measuring device according to the first invention tilts the sample stage on which the sample is placed with respect to the incident axis of the focused electron beam, thereby increasing the efficiency of emitting signals such as reflected electrons, secondary electrons, and X-rays. , the length is measured by increasing the signal intensity of the sample image.
さらに、第２の発明は、試料が傾斜したことにより、試
料上に走査されるべき電子ビームの矩形領域が台形形状
に変化してしまうのを補正する偏向信号を発生するよう
にしたものである。Furthermore, the second invention generates a deflection signal to correct the change in the rectangular area of the electron beam to be scanned onto the sample into a trapezoidal shape due to the tilting of the sample. .
この第１の発明においては、試料を傾斜させることによ
り、反射電子、二次電子、Ｘ線等の信号が高まり、試料
上のパターン像の信号対雑音比か向上する。この結果、
パターンの視認性が向上し、パターンのエツジの認識が
行い易くなる。In this first invention, by tilting the sample, the signals of reflected electrons, secondary electrons, X-rays, etc. are increased, and the signal-to-noise ratio of the pattern image on the sample is improved. As a result,
The visibility of the pattern is improved, making it easier to recognize the edges of the pattern.
第２の発明においては偏向信号発生回路により、偏向信
号を補正することで、傾斜した試料に対して正しく矩形
に電子ビームを照射する。その結果、さらに高精度な測
長を行うことができる。In the second invention, the deflection signal is corrected by the deflection signal generation circuit, so that the tilted sample is irradiated with the electron beam in a correct rectangular shape. As a result, even more accurate length measurement can be performed.
以下、この発明の一実施例を図について説明する。 An embodiment of the present invention will be described below with reference to the drawings.
第１図（ａ）において、ｌは電子ビーム発生源、２は電
子ビーム集束レンズ、３は偏向用コイル又は電極、４は
電子ビームを示す。また、５は試料ステージ、６は試料
ステージ５に載置された半導体ウェハ、１７は試料ステ
ージを回転する機構、７は電子ビーム４により発生した
反射電子、二次電子、Ｘ線等の信号、８は信号７の検出
器、９は検出器８で検出された信号の増幅器、１ｏは電
子ビーム４を偏向器３にて偏向し試料６上に電子ビーム
を走査するための走査信号である。また、第１図（ｂ）
において、４は試料に入射する電子ビーム、６は傾斜し
た試料、７は電子ビーム４により発生した反射電子、二
次電子、Ｘ線等の信号を示す。In FIG. 1(a), 1 is an electron beam generation source, 2 is an electron beam focusing lens, 3 is a deflection coil or electrode, and 4 is an electron beam. Further, 5 is a sample stage, 6 is a semiconductor wafer placed on the sample stage 5, 17 is a mechanism for rotating the sample stage, 7 is a signal such as reflected electrons, secondary electrons, X-rays, etc. generated by the electron beam 4; 8 is a detector for the signal 7, 9 is an amplifier for the signal detected by the detector 8, and 1o is a scanning signal for deflecting the electron beam 4 by the deflector 3 and scanning the electron beam on the sample 6. Also, Fig. 1(b)
, 4 indicates an electron beam incident on the sample, 6 indicates an inclined sample, and 7 indicates signals such as reflected electrons, secondary electrons, and X-rays generated by the electron beam 4.
また、第１図（Ｃ）は試料を二次元的に走査して得た傾
斜パターン像を示す図であり、図中１３は走査領域、１
４はパターン線幅、１５はパターン、１６は別な方向の
パターン線幅を示す。In addition, FIG. 1(C) is a diagram showing an inclined pattern image obtained by two-dimensionally scanning a sample, in which 13 is a scanning area;
4 indicates a pattern line width, 15 indicates a pattern, and 16 indicates a pattern line width in another direction.
次に、第１の発明の動作原理について説明する。Next, the operating principle of the first invention will be explained.
第１図体）の試料部分を拡大した図が第１図（ｂ）であ
るが、第１図（ｂ）の試料を傾けたことにより、試料の
傾斜角をθとすると、信号量は１ ／ ｃ ｏ ｓθの
比で、大きくなることはよく知られており（例えば、Ｌ
、Ｒｅｉｍｅｒ ”Ｓｃａｎｎｉｎｇ Ｅｌｅｃｔｒｏ
ｎ Ｍｉｃｒｏｓｃｏｐｙ”。Figure 1(b) is an enlarged view of the sample part in Figure 1(b). By tilting the sample in Figure 1(b), if the tilt angle of the sample is θ, the signal amount is 1 / It is well known that the ratio of c o s θ increases (for example, L
, Reimer “Scanning Electro
n Microscopy”.
１９８５年刊ｐ、１４５等参照）、これはパターン像の
視認性を上げる効果かある。こうして得られたパターン
像は第１図（Ｃ）のような傾斜した像になり、従来の第
２図（ｄ）に比し、よりコントラストのついたイメージ
になる。この上で、半導体のようにＸ。1985, p. 145, etc.), this has the effect of increasing the visibility of the pattern image. The pattern image thus obtained becomes an inclined image as shown in FIG. 1(C), and has more contrast than the conventional image shown in FIG. 2(d). On this, X like a semiconductor.
Ｙ方向両方に配置されたパターンのうち、第１図（Ｃ）
の１４で示されたようなパターン幅は、従来方法で測長
することができるか、１６で示されたパターン幅は正し
く測長することができないので、第１図１７のステージ
回転機構を用いて、試料パターンを９０°又は２７００
回転させることにより測長することができる。Among the patterns arranged in both Y directions, Fig. 1 (C)
The pattern width shown in 14 can be measured using the conventional method, or the pattern width shown in 16 cannot be measured correctly, so it can be measured using the stage rotation mechanism shown in Fig. 17. and rotate the sample pattern to 90° or 2700°.
Length can be measured by rotating it.
このような第１の発明の実施例によれば、試料ステージ
を電子ビームに対して傾斜させることにより、パターン
像の視認性を上げる効果がある。According to this embodiment of the first invention, by tilting the sample stage with respect to the electron beam, there is an effect of increasing the visibility of the pattern image.
また、この上で、半導体のようにＸ、 Ｙ方向両方１６
で示されたパターン幅は第１図１７のステージ回転機構
を用いて、試料パターンを９０’又は２７０°回転させ
ることにより試料上のパターンをよいコントラストで測
長することかできる効果がある。Also, on top of this, like a semiconductor, both the X and Y directions 16
The pattern width shown by is effective in making it possible to measure the length of a pattern on a sample with good contrast by rotating the sample pattern by 90' or 270 degrees using the stage rotation mechanism shown in FIG. 17.
次に第２の発明の一実施例を第１図（ｄ）〜げ）におい
て説明する。Next, an embodiment of the second invention will be described with reference to FIGS. 1(d) to 1).
第１図（ｄ）は試料傾斜した際の電子ビームの走査領域
がどのように変化するかを示した図であり、第１図（ｅ
）はそれを補正する偏向信号発生回路の一例、第１図げ
）は上記偏向信号発生回路により補正された傾斜面での
走査領域が、正しく矩形領域を走査していることを示す
図である。Figure 1(d) is a diagram showing how the scanning area of the electron beam changes when the sample is tilted, and Figure 1(e)
) is an example of a deflection signal generation circuit that corrects it, and Figure 1 (g) is a diagram showing that the scanning area on the slope corrected by the deflection signal generation circuit is correctly scanning a rectangular area. .
第１図（ｄ）において、２０は試料か電子ビームに対し
て垂直に配置された場合に、正しく矩形状に走査されて
いる領域である。２２は試料傾斜角θ、２１は試料が傾
斜角θで傾斜している場合の電子ビームの走査領域、２
３Ｄは電子ビームの偏向の作動距離、２４は偏向作動点
を示す。また、第１図（ｅ）において、３０は矩形走査
信号発生回路、３１はその走査領域、３２は乗算器、３
６は除算器、３７は補正された台形形状の走査領域を示
す。又、第１図げ）において、２０は第１図（ｅ）のよ
うな回路で発生した試料垂直面での走査領域、２１は２
２の傾斜角θで傾斜された試料面で正しく矩形に走査さ
れた領域、２３は電子ビーム偏向の作動距離、２４は偏
向作動点を示す。In FIG. 1(d), 20 is an area that is correctly scanned in a rectangular shape when the sample is placed perpendicular to the electron beam. 22 is the sample tilt angle θ, 21 is the scan area of the electron beam when the sample is tilted at the tilt angle θ, 2
3D indicates the working distance for deflection of the electron beam, and 24 indicates the deflection operating point. Further, in FIG. 1(e), 30 is a rectangular scanning signal generation circuit, 31 is its scanning area, 32 is a multiplier, 3
6 is a divider, and 37 is a corrected trapezoidal scanning area. In addition, in Fig. 1(e), 20 is the scanning area on the vertical plane of the sample generated by the circuit as shown in Fig. 1(e), and 21 is the scanning area 2
2, a region 23 indicates a working distance of electron beam deflection, and 24 indicates a deflection operating point.
次に第２の発明の動作原理を説明する。第１の発明では
、信号強度が向上してパターン像の視認性を向上するこ
とができたが、第１図（Ｃ）のように２次元走査領域で
の像は投影的にみえてしまい、測長する部分によっては
正しく測長ができない。Next, the operating principle of the second invention will be explained. In the first invention, the signal strength was improved and the visibility of the pattern image could be improved, but as shown in FIG. 1(C), the image in the two-dimensional scanning area looks like a projection. Depending on the part to be measured, the length may not be measured correctly.
これは第１図（ｄ）に示すように、電子ビームに対し垂
直に試料を配置した際には正しく矩形を走査するように
偏向信号を発生すれば、傾斜面では２１のように逆台形
形状の領域を走査することになる。As shown in Figure 1(d), if a deflection signal is generated to correctly scan a rectangle when the sample is placed perpendicular to the electron beam, it will form an inverted trapezoidal shape as shown in 21 on an inclined surface. The area will be scanned.
それを二次元的に表示すれば、第１図（Ｃ）のように投
影的な像が見えてしまう。If you display it two-dimensionally, you will see a projected image as shown in Figure 1(C).
そこで第１図（ｄ）において、垂直面上での座標（Ｘ、
Ｙ）と、傾斜面に投影された傾斜面上での座標（ｘ、
ｙ）との関係を正しく計算すると、Ｘ＝
１ ＋−ｓ ｉ ｎθ
であった。ここでＤは作動距離を示し、θは傾斜角を示
す。Therefore, in Fig. 1(d), the coordinates (X,
Y) and the coordinates (x,
When the relationship with y) was correctly calculated, it was X = 1 + - sin θ. Here, D indicates the working distance and θ indicates the tilt angle.
傾斜面上の（ｘ、 ｙ）の点を正しく矩形に走査するた
めには、（ｘ、 ｙ）に矩形走査信号を与え、式（１
）に従って（Ｘ、 Ｙ）を計算しつつ補正した偏向信号
を与えれば可能である。その実施例として第１図（ｅ）
の回路を示す。３０で矩形走査信号（Ｘ。In order to correctly scan the point (x, y) on the slope in a rectangular manner, give a rectangular scanning signal to (x, y) and use equation (1).
), it is possible to calculate (X, Y) and provide a corrected deflection signal. As an example, Fig. 1(e)
The circuit is shown below. 30, a rectangular scanning signal (X.
ｙ）を与える。これは従来の偏向走査回路でよい。y). This may be a conventional deflection scanning circuit.
その後、Ｘ信号と、作動距離り、傾斜角θのデータから
、
１＋ ｓ ｉｎθ
を計算する回路３２を通し、Ｘ信号を
１＋ ｓｉｎθ
で除する除算器３６を通してＸ信号を出力する。Thereafter, the X signal is outputted through a circuit 32 that calculates 1+ sin θ from the data of the X signal, the working distance, and the inclination angle θ, and a divider 36 that divides the X signal by 1+ sin θ.
又、Ｘ信号にＣＯＳθを乗算器３５で乗して後、１−１
− ｓｉｎθ
て除して後Ｘ信号を出力する。こうすると、Ｘ。Also, after multiplying the X signal by COSθ by the multiplier 35, 1-1
- After dividing by sinθ, output the X signal. This way, X.
Ｙには３７で示したような台形形状の走査をする信号を
発生する。A signal for trapezoidal scanning as shown at 37 is generated at Y.
第１図げ）の電子ビームに対して垂直面２０に第１図（
ｅｌの台形形状の偏向信号を与えると、傾斜面２１に正
しく矩形形状の走査領域ができることかわかる。このよ
うに、第１図（ａ）において、ｌＯで示される走査信号
発生器に第１図（ｅ）で示すような実施例の回路を用い
れば、傾斜面上の走査を、正しく矩形形状に行うことが
でき、二次元状にパターン像を表示すると、パターンの
エツジが平行に表示でき正しく測長することができる。The plane 20 perpendicular to the electron beam in Figure 1 (Figure 1)
It can be seen that if a trapezoidal deflection signal of el is given, a rectangular scanning area can be correctly formed on the inclined surface 21. In this way, if the circuit of the embodiment shown in FIG. 1(e) is used for the scanning signal generator indicated by lO in FIG. When the pattern image is displayed two-dimensionally, the edges of the pattern can be displayed in parallel and the length can be measured correctly.
このような第２の発明の実施例によれば、試料を傾斜し
たことで生ずる傾斜面上での走査領域の変形を、第１図
（ａ）において、１０で示される走査信号発生器に第１
図（ｅ）で示すような実施例の回路を用いることで、傾
斜面上での試料に対し、正しい矩形領域の走査をするこ
とができ、二次元のパターン像のエツジを正しく平行に
とることかでき、高精度の測長ができる効果がある。According to this embodiment of the second invention, the deformation of the scanning area on the inclined surface caused by tilting the sample is detected by the scanning signal generator indicated by 10 in FIG. 1(a). 1
By using the circuit of the embodiment as shown in Figure (e), it is possible to scan a correct rectangular area for a sample on an inclined surface, and the edges of a two-dimensional pattern image can be made correctly parallel. This has the effect of allowing highly accurate length measurements.
以上のように、第１の発明によれば試料ステージを電子
ビームに対して傾斜させ、かつ所望の方向のパターンを
測長できるようにステージを回転できるようにしたので
、試料上のパターンをよいコントラストで測長すること
ができ、所望パターンを正しく測長することができる効
果がある。As described above, according to the first invention, the sample stage is tilted with respect to the electron beam, and the stage can be rotated so that the length of the pattern in a desired direction can be measured. Length measurement can be performed using contrast, which has the effect of accurately measuring the length of a desired pattern.
さらに、第２の発明によれば試料を傾斜したことで生ず
る傾斜面上での走査領域の変形を、補正するような走査
信号発生回路を設けたので、傾斜面上での試料に対し、
正しい矩形領域の走査をすることができ、二次元のパタ
ーン像のエツジを正しく平行にとることができ、高精度
の測長ができる効果がある。Furthermore, according to the second aspect of the invention, a scanning signal generation circuit is provided that corrects deformation of the scanning area on the inclined surface caused by tilting the sample.
It is possible to scan a correct rectangular area, the edges of a two-dimensional pattern image can be set correctly parallel, and highly accurate length measurement is possible.
第１図（ａ）はこの発明の一実施例による電子ビーム寸
法測定装置を示す図、第１図（ｂ）はその効果を示す試
料近傍の拡大図、第１図（Ｃ）は試料を傾斜したことに
よって得られる二次元パターン像を示す図、第１図（ｄ
）は試料を傾斜したことによって傾斜面での走査領域か
変形することを説明する図、第１図（ｅ）は傾斜面の走
査領域の変形を補正する走査信号発生回路を示す図、第
１図げ）は電子ビームが補正され正しく傾斜面に矩形走
査されていることを示す図である。
第２図（ａ）は従来例による電子ビーム寸法測定装置を
示す図、第２図（ｂ）はその原理を示すための試料近傍
拡大図、第２図（Ｃ）は−次元信号例を示す図、第２図
（ｄは従来例での二次元パターン像を示す図である。
図中、ｌは電子ビーム発生源、２は電子ビーム集束レン
ズ、３は偏向用コイル又は電極、４は電子ビーム、５は
試料ステージ、６は試料、７は信号、８は検出器、９は
増幅器、ｌＯは走査信号発生器、１７はステージ回転機
構、１３は二次元走査領域、１４は測長線幅、１６は別
な測長幅、１５はパターンを示す。
なお図中同一符号は同−又は相当部分を示す。FIG. 1(a) is a diagram showing an electron beam dimension measuring device according to an embodiment of the present invention, FIG. 1(b) is an enlarged view of the vicinity of the sample showing its effect, and FIG. 1(C) is a diagram showing the sample tilted. Figure 1 (d) shows a two-dimensional pattern image obtained by
) is a diagram explaining that the scanning area on an inclined surface is deformed by tilting the sample, FIG. Figure 1) is a diagram showing that the electron beam is corrected and correctly scanned in a rectangular manner on an inclined surface. Figure 2(a) is a diagram showing a conventional electron beam dimension measuring device, Figure 2(b) is an enlarged view of the vicinity of a sample to illustrate its principle, and Figure 2(C) is an example of a -dimensional signal. 2 (d is a diagram showing a two-dimensional pattern image in a conventional example. In the figure, l is an electron beam generation source, 2 is an electron beam focusing lens, 3 is a deflection coil or electrode, and 4 is an electron beam generation source. 5 is a sample stage, 6 is a sample, 7 is a signal, 8 is a detector, 9 is an amplifier, IO is a scanning signal generator, 17 is a stage rotation mechanism, 13 is a two-dimensional scanning area, 14 is a length measurement line width, Reference numeral 16 indicates another length measurement width, and 15 indicates a pattern. In the figures, the same reference numerals indicate the same or equivalent parts.
Claims (2)
レンズと、この集束した電子ビームを偏向する偏向手段
とを備えた電子ビーム光学系と、試料を載置する試料ス
テージと、該試料上のパターンに電子線を二次元的に走
査しながら照射する走査信号発生手段と、 上記パターンから発生する信号を検出する手段とを備え
、 その二次元信号像よりパターンエッジを決定し、そのパ
ターン寸法を測定するようにした電子ビーム寸法測定装
置において、 上記試料ステージは入射する電子線に対し反射電子線の
強度を強くするよう傾斜しており、かつ上記試料ステー
ジは、試料の所望のパターンを測定できるよう回転可能
に設けられていることを特徴とする電子ビーム寸法測定
装置。(1) An electron beam optical system including an electron beam generation source, a lens that focuses the electron beam, and a deflection means that deflects the focused electron beam, a sample stage on which a sample is placed, and a sample stage on which a sample is placed; scanning signal generating means for irradiating an electron beam while scanning the pattern two-dimensionally, and means for detecting a signal generated from the pattern, determining the pattern edge from the two-dimensional signal image, and determining the pattern size. In the electron beam dimension measuring apparatus, the sample stage is inclined to increase the intensity of the reflected electron beam relative to the incident electron beam, and the sample stage measures a desired pattern of the sample. An electron beam dimension measuring device characterized in that it is rotatably provided so as to be able to perform measurements.
発生手段は、傾斜試料上の座標を（ｘ，ｙ），試料傾斜
角をθ，偏向作動距離をＤとすると、▲数式、化学式、
表等があります▼ で表される走査信号を発生し、傾斜試料上に矩形走査せ
しめることを特徴とする請求項１記載の電子ビーム寸法
測定装置。(2) The scanning signal generation means for supplying a scanning signal to the deflection means has the following formula: ▲Mathematical formula, chemical formula,
2. The electron beam dimension measuring device according to claim 1, wherein a scanning signal represented by ▼ is generated and scanned in a rectangular manner on an inclined sample.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2258369A JP2548834B2 (en) | 1990-09-25 | 1990-09-25 | Electron beam dimension measuring device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2258369A JP2548834B2 (en) | 1990-09-25 | 1990-09-25 | Electron beam dimension measuring device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04132909A true JPH04132909A (en) | 1992-05-07 |
| JP2548834B2 JP2548834B2 (en) | 1996-10-30 |
Family
ID=17319290
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2258369A Expired - Lifetime JP2548834B2 (en) | 1990-09-25 | 1990-09-25 | Electron beam dimension measuring device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2548834B2 (en) |
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Also Published As
| Publication number | Publication date |
|---|---|
| JP2548834B2 (en) | 1996-10-30 |
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