JPH04125683A - El display device - Google Patents

El display device

Info

Publication number
JPH04125683A
JPH04125683A JP2248533A JP24853390A JPH04125683A JP H04125683 A JPH04125683 A JP H04125683A JP 2248533 A JP2248533 A JP 2248533A JP 24853390 A JP24853390 A JP 24853390A JP H04125683 A JPH04125683 A JP H04125683A
Authority
JP
Japan
Prior art keywords
display device
light emitting
layer
substrate
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2248533A
Other languages
Japanese (ja)
Other versions
JP3202219B2 (en
Inventor
Masanori Sakamoto
正典 坂本
Yasushi Kawada
靖 川田
Yasushi Mori
寧 森
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=17179603&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=JPH04125683(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP24853390A priority Critical patent/JP3202219B2/en
Publication of JPH04125683A publication Critical patent/JPH04125683A/en
Application granted granted Critical
Publication of JP3202219B2 publication Critical patent/JP3202219B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80Constructional details
    • H10K59/875Arrangements for extracting light from the devices

Landscapes

  • Electroluminescent Light Sources (AREA)
  • Luminescent Compositions (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Control Of El Displays (AREA)

Abstract

PURPOSE:To obtain satisfactory responding speed and angle of visibility, to realize a thin structure and a high luminance by constituting an organic EL system as an EL light emitting layer. CONSTITUTION:The EL display device is equipped with a substrate 1 on which a switching element 2 is installed to be shaped like a matrix, EL element groups subjected to laminate patterning on the substrate 1, an outside circuit which drives the EL element groups through the switching element 2. Then, an EL light emitting part is an electrostatic charge injecting type constitution in which an electrostatic charge transporting layer 7 is laminated on an EL light emitting layer 8 using an organic fluorescent pigments being materials having the high luminance. Thus, an EL display device which has the high luminance, a high speed responsibility, and the wide angle of visibility can be obtained.

Description

【発明の詳細な説明】 [発明の目的] (産業上の利用分野) 本発明は薄型デイスプレィ装置に係り、特にEL表示装
置に関する。
DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Industrial Application Field) The present invention relates to a thin display device, and particularly to an EL display device.

(従来の技術) 薄型デイスプレィ装置として、薄膜トランジスタアレイ
とカラーフィルタでTN型液晶を挟んで成る、いわゆる
TPT LCDが知られている。しかし、前記TPT 
LCDには、応答速度と視野角の点て次のような不都合
が存在する。
(Prior Art) As a thin display device, a so-called TPT LCD is known, in which a TN type liquid crystal is sandwiched between a thin film transistor array and a color filter. However, the TPT
LCDs have the following disadvantages in terms of response speed and viewing angle.

応答速度は室温でネマチック液晶状態を示し、かつ70
℃程度以上の温度までそれを維持する条件から、液晶分
子の大きさがだいたい定まる。また、元来液晶状態を呈
する分子種は、分子間相互作用が大であることから、粘
性を低下させるにも自ずと限界がある。しかして、TP
TLCDの応答速度はほぼ30m5ecが限界と考えら
れる。
The response speed shows a nematic liquid crystal state at room temperature, and
The size of liquid crystal molecules is roughly determined by the conditions under which the temperature is maintained at temperatures above about 30°F. Furthermore, since molecular species that originally exhibit a liquid crystal state have large intermolecular interactions, there is a limit to how much the viscosity can be reduced. However, T.P.
The response speed of TLCD is considered to be approximately 30m5ec as the limit.

一方、コンピュータ端末表示では、いわゆるマウスを利
用するため、さらに高速応答性が要求される。また、動
画を高精細両縁表示する場合、応答速度が遅いと画素ピ
ッチが細かくても画像の空間分解能が損なわれる。この
ため、より高速化することが、情報端末としても高精細
表示としても必要である。
On the other hand, since a so-called mouse is used for computer terminal display, even faster response is required. Furthermore, when displaying a moving image in high definition on both sides, if the response speed is slow, the spatial resolution of the image will be impaired even if the pixel pitch is fine. Therefore, higher speeds are necessary both for information terminals and high-definition displays.

視野角は複屈折を用いるこのタイプの素子の原理的欠陥
であるといえる。しかし、画面サイズの拡大と共に画面
中心部と周辺部で視野角に無視できない差異を生じ、画
面の中心部と周辺部で画像のコントラストや色調が異な
る結果を生じてしまう。TN型液晶では実用上差支えな
い視野角は、前後、左右各±30°程度である。このた
め、明視距離30cmでは、対角14インチ以上のサイ
ズで画面が視野角の範囲に納まらなくなる。すなわち、
視野角の拡大は大画面化にも必要である。
The viewing angle can be said to be a fundamental flaw in this type of device that uses birefringence. However, as the screen size increases, a non-negligible difference occurs in the viewing angle between the center and the periphery of the screen, resulting in differences in image contrast and color tone between the center and periphery of the screen. For a TN type liquid crystal, the viewing angle that is practically acceptable is approximately ±30° in the front, back, left and right directions. Therefore, at a clear viewing distance of 30 cm, a screen with a diagonal size of 14 inches or more will not fit within the viewing angle range. That is,
Enlarging the viewing angle is also necessary for larger screens.

(発明が解決しようとする課題) 上記のように、従来のTFT LCDタイプの薄型デイ
スプレィの場合、狭い視野角、遅い応答速度という不具
合な問題がある。これらの問題に対しては、次のような
対応が試みられている。
(Problems to be Solved by the Invention) As described above, the conventional TFT LCD type thin display has problems such as a narrow viewing angle and a slow response speed. The following measures have been attempted to address these problems.

先ず、視野角を広げるためには自己発光型の表示とする
必要があり、この自己発光型の表示素子としては、■プ
ラズマ表示素子、■蛍光表示管、■EL(エレクトロル
ミネッセンス)表示などがある。
First, in order to widen the viewing angle, it is necessary to use a self-luminous type of display, and self-luminous display elements include ■plasma display elements, ■fluorescent display tubes, and ■EL (electroluminescence) displays. .

しかして、プラズマ表示素子の場合は、応答速度も速く
、カラー化も可能であるため、素子を微細化して基板上
に厚膜印刷の手法を用いて多数の素子を作り込み、既に
薄型表示素子の体裁を整えつつある。しかし、輝度向上
、高精細化などに、材料および素子構造の点から自ずと
限界があり、実用上満足し得るものは未だ得られていな
い。
However, in the case of plasma display elements, the response speed is fast and color printing is possible, so the elements are miniaturized and a large number of elements are fabricated on the substrate using a thick film printing method, and thin display elements are already being produced. We are currently getting the look right. However, there are limits to the improvement of brightness, high definition, etc. from the viewpoints of materials and element structure, and a practically satisfactory product has not yet been obtained.

また、蛍光表示管の場合、輝度の点では充分ではあるが
、やはり素子構造の点から薄型化、カラー化、高精細化
に限界かある。
In addition, in the case of a fluorescent display tube, although it is sufficient in terms of brightness, there are still limits to thinning, color, and high definition due to the element structure.

本発明は上記事情に対処してなされたもので、良好な応
答速度および視野角を呈するばかりでなく、構造的に薄
型化が可能で、高輝度化やカラー化も達成され、かつ高
精細な画像を表示し得るELL示装置の提供を目的とす
る。
The present invention was developed in response to the above circumstances, and not only exhibits good response speed and viewing angle, but also allows for a thinner structure, high brightness and color, and high definition. The object of the present invention is to provide an ELL display device that can display images.

[発明の構成] (課題を解決するための手段) 本発明に係るELL示装置は、スイッチング素子をマト
リクス状に形設具備させた基板(アクティブマトリクス
)と、前記基板上に堆積パタンニングされたELL子群
と、前記スイッチング素子を介してELL子群を選択的
に駆動する外部回路とを備え、 前記EL素子が有機EL系をELL光層とじてて成るこ
とを特徴とする。
[Structure of the Invention] (Means for Solving the Problems) An ELL display device according to the present invention includes a substrate (active matrix) on which switching elements are arranged in a matrix, and It is characterized in that it comprises a group of ELL children and an external circuit that selectively drives the group of ELL children via the switching element, and the EL element is formed by combining an organic EL system with an ELL light layer.

(作 用) 本発明に係るELL示装置においては、マトリクス状に
形設具iさせた各スイッチング素子を介して、対応する
ELL子群を時分割的に駆動制御し、各EL素子を選択
的に発光させることによって、所要の表示がなされる。
(Function) In the ELL display device according to the present invention, the corresponding ELL child groups are time-divisionally driven and controlled via the respective switching elements arranged in a matrix, and each EL element is selectively activated. A desired display is made by causing the light to emit light.

しかして、前記ELL光層が輝度の高い有機EL材料系
で構成されているため、比較的低い印加電圧でも高輝度
の発光および高速な応答性や広い視野角を呈する。つま
り、コントラストなど良好で、薄型・大画面型のELL
示装置として期待される機能を十分に発揮する。
Since the ELL light layer is made of a high-brightness organic EL material, it exhibits high-brightness light emission, high-speed response, and a wide viewing angle even with a relatively low applied voltage. In other words, ELL has a thin, large screen with good contrast, etc.
It fully demonstrates the functions expected as a display device.

(実施例) 以下添附の図面を参照して本発明の詳細な説明する。(Example) The present invention will now be described in detail with reference to the accompanying drawings.

上記したように、本発明に係るELL示装置は、スイッ
チング素子をマトリクス状に形設具備させた基板(アク
ティブマトリクス)と、前記基板上に堆積パタンニング
されたEL累壬子群、前記スイッチング素子を介してE
LL子群を選択的に駆動する外部回路とを伺えた構成を
成している。しかして、前記アクティブマトリクス、E
LL子群、このELL子群の一部を成す対向電極および
駆動外部回路は、それぞれ基本的に次のごとく構成され
ている。
As described above, the ELL display device according to the present invention includes a substrate (active matrix) on which switching elements are arranged in a matrix, a group of EL elements deposited and patterned on the substrate, and the switching elements. via E
The configuration includes an external circuit that selectively drives the LL child group. Therefore, the active matrix, E
The LL child group, the counter electrode and the drive external circuit forming a part of the ELL child group are basically constructed as follows.

アクティブマトリクス構成 アクティブマトリクスを構成するスイッチング素子は、
TPT (薄膜トランジスタ)、非線形2端子素子のい
ずれも使用することができるが、1O−5A程度の電流
をEL素子に注入する能力を要求される。また、EL素
子は電流駆動型素子であるから、トランジスタを用いる
場合、移動度の大きい材料を用いた方が寸法を小さくで
きる。この意味でたとえば第1図(a)に要部の構成を
断面的に示すように、スイッチング素子としてのTPT
を多結晶シリコンで構成することが好ましい。第1図(
a)において、1はガラス基板、2はソース領域2aお
よびドレイン領域2bを有する多結晶シリコンTPT、
 3はゲート電極、4はたとえば5io2などの絶縁層
、5は前記多結晶シリコンTPT2のソース領域2aに
接続する信号電極母線、6は前記多結晶シリコンTPT
2のドレイン領域2bに接続するたとえばITOから成
る画素電極、7は電荷輸送層、8はEL発光層、9はた
とえばAg、Mgなどから成る背面電極層もしくは対向
電極層である。なお、第1図(b)は、前記第1図(a
)に図示した構成例を平面的に示したものである。
Active matrix configuration The switching elements that make up the active matrix are:
Either a TPT (thin film transistor) or a nonlinear two-terminal element can be used, but the ability to inject a current of about 10-5 A into the EL element is required. Further, since the EL element is a current-driven element, when using a transistor, the size can be reduced by using a material with high mobility. In this sense, for example, as shown in FIG.
Preferably, the material is made of polycrystalline silicon. Figure 1 (
In a), 1 is a glass substrate, 2 is a polycrystalline silicon TPT having a source region 2a and a drain region 2b,
3 is a gate electrode, 4 is an insulating layer such as 5io2, 5 is a signal electrode bus line connected to the source region 2a of the polycrystalline silicon TPT2, and 6 is the polycrystalline silicon TPT
A pixel electrode made of, for example, ITO is connected to the drain region 2b of No. 2, 7 is a charge transport layer, 8 is an EL light emitting layer, and 9 is a back electrode layer or counter electrode layer made of, for example, Ag or Mg. Note that FIG. 1(b) is different from the above-mentioned FIG. 1(a).
) is a plan view of the configuration example shown in FIG.

さらに、前記アクティブマトリクスを3次元化して集積
することにより、トランジスタサイズを大きくすること
ができるため、より形成容易な非晶質シリコンを使用し
、第2図に要部の構成を断面的に示すごとく、スイッチ
ング素子2としてTPTを形成することも可能である。
Furthermore, by making the active matrix three-dimensional and integrating it, the transistor size can be increased, so amorphous silicon, which is easier to form, is used. Similarly, it is also possible to form a TPT as the switching element 2.

第2図において、第1図(a)と同一部分は同一の記号
を付して表示した。
In FIG. 2, the same parts as in FIG. 1(a) are indicated with the same symbols.

なお、前記ではガラス板1を支持基板とした構成を示し
たが、第3図に要部の構成を断面的に示すように、シリ
コンウェハー1′のような半導体結晶上にスイッチング
素子2としてのTPT領域群を形設して成るアクティブ
マトリクスも利用可能である。
Although the above example shows a configuration in which the glass plate 1 is used as a support substrate, as shown in FIG. An active matrix formed of TPT regions can also be used.

その他スイッチング素子2の構成には、たとえばCdT
e、 CdS 、 InSbも大面積に均一に薄膜形成
可能な限り利用することかできる。
Other configurations of the switching element 2 include, for example, CdT.
E, CdS, and InSb can also be used as long as it is possible to form a thin film uniformly over a large area.

一方、前記アクティブマトリックスを構成するスイッチ
ング素子2としての非線形2端子素子では、たとえば第
4図(a)に断面的に、また第4図(b)に斜視的にそ
れぞれ要部の構造を示すように、Ta層 Ta2 05
 / Cr型の旧H構造を採用してもよい。
On the other hand, in a nonlinear two-terminal element as the switching element 2 constituting the active matrix, the structure of the main part is shown, for example, in cross section in FIG. 4(a) and in perspective in FIG. 4(b). , Ta layer Ta2 05
/ Cr type old H structure may be adopted.

第4図(a)および(b)において、1はガラス基板、
10aは前記ガラス基板1面に形設された熱酸化Ta2
 05層、10bはTa層、10cは陽極酸化Ta2 
05層、4はたとえばポリイミド樹脂層などの絶縁層、
6は前記多結晶シリコンTPT 2のドレイン領域2b
に接続するたとえばITOから成る画素電極、7は電荷
輸送層、8はEL発光層、9はたとえば八g。
In FIGS. 4(a) and (b), 1 is a glass substrate;
10a is thermally oxidized Ta2 formed on one surface of the glass substrate.
05 layer, 10b is Ta layer, 10c is anodized Ta2
05 layer and 4 are insulating layers such as polyimide resin layers,
6 is the drain region 2b of the polycrystalline silicon TPT 2;
7 is a charge transport layer, 8 is an EL light emitting layer, and 9 is, for example, 8g.

Mgなどから成る背面電極層もしくは対向電極層である
This is a back electrode layer or a counter electrode layer made of Mg or the like.

なお、前記各構成例において、画素電極6は透光性の 
ITO電極のほか、非透光性の金属電極などであっても
よい。
In each of the above configuration examples, the pixel electrode 6 is made of a transparent material.
In addition to the ITO electrode, a non-transparent metal electrode may be used.

EL素子構成 本発明に係るEL表示装置のアクティブマトリクスでは
、形設具備する多数のEL表示素子が時分割駆動する構
成となっている。しかして、EL発光部は通常1mmm
息角の大きさにパタンニングされている。つまり、EL
発光部は輝度の高い材料である有機蛍光性色素を用いた
EL発光層8に、電荷輸送層7を積層した電荷注入型の
構造を採っている。ここで、有機EL素子11の注入電
流と発光輝度の関係は、大略、第5図に図示するごとく
である。
EL Element Configuration In the active matrix of the EL display device according to the present invention, a large number of EL display elements are time-divisionally driven. However, the EL light emitting part is usually 1 mm.
It is patterned according to the size of the angle of respiration. In other words, E.L.
The light emitting section has a charge injection type structure in which a charge transport layer 7 is laminated on an EL light emitting layer 8 using an organic fluorescent dye, which is a material with high brightness. Here, the relationship between the injection current and the luminance of the organic EL element 11 is approximately as shown in FIG. 5.

なお、前記発光画素(EL素子)llの寸法を0.3關
X  O,3mg+とすると、1000 Cd /IT
7′の輝度を得るためにはto−5Aの電流を注入する
必要がある。
In addition, if the dimensions of the light emitting pixel (EL element) 11 are 0.3 x O, 3 mg+, then 1000 Cd/IT
In order to obtain a luminance of 7', it is necessary to inject a current of to-5A.

また、前記パタンニングは、たとえば有機蛍光色素のマ
スク蒸着、あるいは有機蛍光色素のべた蒸着膜をフォト
レジストによるリフトオフ法でパタンニングする方法な
どなし得る。さらには、適当なバインダー樹脂に相溶さ
せた有機蛍光色素溶液をオフセット印刷法、スクリーン
印刷法などで、基板上にバタン印刷する方法を用いるこ
とが可能である。
Further, the patterning can be performed, for example, by mask vapor deposition of an organic fluorescent dye, or by patterning a solid vapor-deposited film of an organic fluorescent dye by a lift-off method using a photoresist. Furthermore, it is possible to use a method of slam-printing an organic fluorescent dye solution dissolved in a suitable binder resin onto the substrate by offset printing, screen printing, or the like.

対抗電極(背面電極) ガラス基板1面上に形成したアクティブマトリクスの上
に、さらにマトリックス状に配設されたEL発光層8の
発光をガラス基板1ごしに目視する場合は、対向電極(
背面電極)9は非透光性の電極であってもよい。反射率
を低くする場合には、薄い金(Au)層を介在させた炭
素電極、あるいは金、白金、ニッケルなどの金属粒子を
分散させた炭素ペーストを塗布した膜が使用される。ま
た、反射率を高くして発光利用効率を上げるためには、
金、白金、ニッケルなどの蒸着膜、スパッタ膜、あるい
はこれら金属のペーストを塗布した膜が用いられる。
Counter electrode (back electrode) When the light emission of the EL light emitting layer 8 further arranged in a matrix on the active matrix formed on the glass substrate 1 is to be visually observed through the glass substrate 1, the counter electrode (
The back electrode) 9 may be a non-transparent electrode. In order to lower the reflectance, a carbon electrode with a thin gold (Au) layer interposed therein, or a film coated with carbon paste in which metal particles such as gold, platinum, or nickel are dispersed, is used. In addition, in order to increase the reflectance and increase the luminous efficiency,
A vapor deposited film or a sputtered film of gold, platinum, nickel, etc., or a film coated with a paste of these metals is used.

一方、EL発光層8からの光をガラス基板1を介在せず
に直接目視する場合、透光性の対抗電極9としては、I
TO1金、ニッケル、白金などの低温薄膜形成した電極
、あるいはポリイソシアナフテンなどの透明有機導電性
高分子の電極が用いられる。
On the other hand, when the light from the EL light-emitting layer 8 is directly viewed without intervening the glass substrate 1, the light-transmitting counter electrode 9 is I
An electrode formed of a low-temperature thin film of TO1 gold, nickel, or platinum, or an electrode of a transparent organic conductive polymer such as polyisocyanapthene is used.

駆動外部回路構成 駆動方式としては、TFT LCDテレビと同様な線順
次駆動を採り得る。この場合、走査線の駆動パルス幅が
狭いので、点順次型のCRT型テレビと同様の網膜上の
残像利用により連続発光感を与えることが好ましく、ま
た発光強度が大である場合には、TVと同様の点順次駆
動も可能である。発光強度が不足して画面にちらつき(
フリッカ)が見られる場合には、発光強度を補うか、あ
るいは発光時間を延長させる手段を併用すればよい。
Driving External Circuit Configuration As a driving method, a line sequential driving similar to that of a TFT LCD television can be adopted. In this case, since the driving pulse width of the scanning line is narrow, it is preferable to use the afterimage on the retina in the same way as dot-sequential type CRT type televisions to give a feeling of continuous light emission. Point-sequential driving similar to the above is also possible. The light intensity is insufficient and the screen flickers (
If flicker is observed, the light emission intensity may be supplemented or a means for extending the light emission time may be used in combination.

すなわち、第6図に要部構成を断面的に示すように、た
とえば第1図に図示したELパネルのガラス基板1面に
、光増強用のチャンネルプレート12を配設し、EL光
発光増強する。ここで、第7図に要部構成を断面的に示
すように、チャンネルプレート12の蛍光面の発光色を
白色にし、かつチャンネルプレー)12とELパネルの
画素、換言するとEL素子11群を位置合わせし、さら
にカラーフィルタ13を重畳することにより、カラー化
も可能となる。
That is, as shown in FIG. 6 in cross-section of the main structure, for example, a channel plate 12 for light enhancement is provided on one surface of the glass substrate of the EL panel shown in FIG. 1, and the EL light emission is enhanced. . Here, as shown in FIG. 7 in cross section of the main part configuration, the luminescent color of the fluorescent screen of the channel plate 12 is set to white, and the pixels of the channel plate 12 and the EL panel, in other words, the EL element 11 group are positioned. By combining and further superimposing the color filter 13, colorization is also possible.

また、発光を持続させる他の手段としては、たとえば第
1図に図示した構成において、EL発光層8にたとえば
1.4−ジブロモナフタレンのような遅延発光材料を添
加し、選択パルスの通過後も一定時間、発光が継続する
ような構成としてもよい。
Further, as another means for sustaining the light emission, for example, in the configuration shown in FIG. A configuration may be adopted in which light emission continues for a certain period of time.

この場合遅延発光材料の選択はEL発光層8を構成する
EL材料に依存するが、遅延発光波長は必ずしも選択パ
ルス印加時のEL発光波長と一致していなくともよい。
In this case, the selection of the delayed luminescent material depends on the EL material constituting the EL luminescent layer 8, but the delayed luminescent wavelength does not necessarily have to match the EL luminescent wavelength when the selection pulse is applied.

視感波長はEL光発光遅延発光の網膜上での混合により
決まる。したがって、EL光発光遅延発光の波長設定に
より、視感波長を所定色に選択可能である。
The visual wavelength is determined by the mixing of delayed EL light emission on the retina. Therefore, the visual wavelength can be selected to a predetermined color by setting the wavelength of the delayed EL light emission.

さらに、発光を持続させる他の手段は、第8図に要部の
構成を断面的に示すように、ELパネルの上に遅延発光
パネル(フォトパルスストレッチャ)を重畳することで
ある。この場合、ELパネルからのパルス状発光がフォ
トパルスストレッチャ14に照射されると、フォトパル
スストレッチャ14を構成する遅延発光材料を準安定状
態に励起する。しかして、前記準安定状態は熱励起によ
り基底状態に発光遷移し、また熱励起過程では遅延が生
じ、遅延発光が起こる。このようなことから、2種類以
上の発光体層をモザイク状にパタンニングして構成した
遅延発光パネル14を、ELパネルの画素(EL素子l
1群)と位置合わせして重畳することにより、カラー化
も可能となる。
Furthermore, another means for sustaining light emission is to superimpose a delayed light emission panel (photopulse stretcher) on the EL panel, as shown in FIG. In this case, when the photopulse stretcher 14 is irradiated with pulsed light emission from the EL panel, the delayed luminescent material forming the photopulse stretcher 14 is excited to a metastable state. The metastable state undergoes a luminescent transition to the ground state due to thermal excitation, and a delay occurs during the thermal excitation process, resulting in delayed luminescence. For this reason, the delayed light emitting panel 14, which is constructed by patterning two or more types of light emitter layers in a mosaic shape, is used for the pixels (EL elements) of the EL panel.
Colorization is also possible by aligning and superimposing with the first group).

さらにまた、線順次駆動方式によった場合は、TFT 
LCDを使用し得るので、ゲートドライバICをそのま
ま使用可能となる。しかも、有機EL材料を用いること
により、駆動電圧は IOV程度になり、信号fi源も
TFT LCDで使用される信号線ドライバをそのまま
、あるいは電流ブースターを付加することにより使用可
能である。
Furthermore, in the case of line sequential driving method, TFT
Since an LCD can be used, the gate driver IC can be used as is. Furthermore, by using an organic EL material, the driving voltage is approximately IOV, and the signal fi source can be the same as the signal line driver used in TFT LCDs, or by adding a current booster.

上記のように構成された本発明に係るEL表示装置は、
広い視野角を呈するが、これをさらに向上・改善するた
め、EL発光面を拡散面、あるいは指向性透過集光面に
してもよい。たとえばELパネルのガラス基板1面を粗
面化して、EL光発光拡散させ、視野角を拡大させると
か、あるいは第9図に要部の構成を断面的に示すごと<
ELパネルのガラス基板1面にレンチキュラレンズ15
を蝕刻もしくは樹脂の塗布成型により設け、特定視野方
向への集光や均一散光を行わせることで、視野角の限定
、あるいは拡大が可能となる。
The EL display device according to the present invention configured as described above includes:
Although it exhibits a wide viewing angle, in order to further improve this, the EL light emitting surface may be made into a diffusing surface or a directional transmission light condensing surface. For example, one surface of the glass substrate of the EL panel may be roughened to diffuse the EL light emission and expand the viewing angle.
Lenticular lens 15 on one side of the glass substrate of the EL panel
The viewing angle can be limited or expanded by providing it by etching or molding with resin and condensing light in a specific viewing direction or uniformly scattering the light.

[発明の効果] 上記説明から分るように、本発明によれば繁雑な構成な
いし製造手段など要せずに、高輝度、高分解能および高
速応答性でかつ視野角の広いEL表示装置の提供が可能
となる。すなわち、薄型化大型化の特徴を十分に活かし
た、しがも実用上要求される表示機能(高輝度、高分解
能および高速応答性など)を備えるとしに、カラー表示
も可能なEL表示装置を実現することができる。
[Effects of the Invention] As can be seen from the above description, the present invention provides an EL display device with high brightness, high resolution, fast response, and a wide viewing angle without requiring complicated configuration or manufacturing means. becomes possible. In other words, we are developing an EL display device that takes full advantage of its thinner and larger features and has the display functions required for practical use (high brightness, high resolution, high-speed response, etc.) and is also capable of color display. It can be realized.

【図面の簡単な説明】[Brief explanation of drawings]

第1図(a)は本発明に係るEL表示装置の要部構成例
を示す断面図、第1図(b)は第1図(a)に図示した
EL表示装置の要部構成例を示す平面図、第2図、第3
図および第4図(a)は本発明に係るEL表示装置の他
の異なる要部構成例を示す断面図、第4図(b)は第4
図(a)に図示したEL表示装置の要部構成を示す斜視
図、第5図は本発明に係るEL表示装置のEL発光層を
成す有機EL層に対する注入電流と発光輝度との関係を
例示する曲線図、第6図、第7図、第8図および第9図
は本発明に係るEL表示装置のさらに他の異なる要部構
成例を示す断面図である。 1・・・・・・ガラスU板 1′ ・・・Stウェハー 2・・・・・・多結晶SI TFT 2a・・・・・・ソース領域 2b・・・・・・ドレイン領域 3・・・・・・ゲート電極 4・・・・・・絶縁層(SiO2,SiN  、ポリイ
ミドなど) 5・・・・・・信号電極母線 6・・・・・・画素電極(ITO,AgMgなど)7・
・・・・・電荷輸送層 8・・・・・・EL発光層 9・・・・・・背面(対向)電極層 10a−・・熱酸化Ta205層 10b ・・・Ta層 10c・・・陽極酸化Ta205層 l】・・・・・・EL素子 12・・・・・・チャンネルプレート 13・・・・・・カラーフィルタ 14・・・・・・フォトパルスストレッチャ15・・・
・・・レンチキュラレンズ 出願人     株式会社 東芝
FIG. 1(a) is a sectional view showing an example of the configuration of a main part of an EL display device according to the present invention, and FIG. 1(b) shows an example of a structure of main parts of the EL display device illustrated in FIG. 1(a). Plan view, Figure 2, Figure 3
FIG. 4 and FIG. 4(a) are cross-sectional views showing other different configuration examples of essential parts of the EL display device according to the present invention, and FIG.
FIG. 5 is a perspective view showing the configuration of main parts of the EL display device shown in FIG. 5A, and FIG. The curve diagrams, FIGS. 6, 7, 8, and 9 are cross-sectional views showing still other different configuration examples of essential parts of the EL display device according to the present invention. 1...Glass U plate 1'...St wafer 2...Polycrystalline SI TFT 2a...Source region 2b...Drain region 3... ... Gate electrode 4 ... Insulating layer (SiO2, SiN, polyimide, etc.) 5 ... Signal electrode bus bar 6 ... Pixel electrode (ITO, AgMg, etc.) 7.
... Charge transport layer 8 ... EL light emitting layer 9 ... Back (counter) electrode layer 10a ... Thermally oxidized Ta205 layer 10b ... Ta layer 10c ... Anode Oxidized Ta205 layer]...EL element 12...Channel plate 13...Color filter 14...Photopulse stretcher 15...
...Lenticular lens applicant Toshiba Corporation

Claims (1)

【特許請求の範囲】  スイッチング素子をマトリクス状に形設具備させた基
板(アクティブマトリクス)と、前記基板上に堆積パタ
ンニングされたEL素子群と、前記スイッチング素子を
介してEL素子群を選択的に駆動する外部回路とを備え
、 前記EL素子が有機EL系をEL発光層として成ること
を特徴とするEL表示装置。
[Claims] A substrate (active matrix) on which switching elements are arranged in a matrix, a group of EL elements deposited and patterned on the substrate, and a group of EL elements selectively selected through the switching element. and an external circuit for driving the EL display device, wherein the EL element comprises an organic EL system as an EL light emitting layer.
JP24853390A 1990-09-18 1990-09-18 EL display device Expired - Lifetime JP3202219B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24853390A JP3202219B2 (en) 1990-09-18 1990-09-18 EL display device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24853390A JP3202219B2 (en) 1990-09-18 1990-09-18 EL display device

Publications (2)

Publication Number Publication Date
JPH04125683A true JPH04125683A (en) 1992-04-27
JP3202219B2 JP3202219B2 (en) 2001-08-27

Family

ID=17179603

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24853390A Expired - Lifetime JP3202219B2 (en) 1990-09-18 1990-09-18 EL display device

Country Status (1)

Country Link
JP (1) JP3202219B2 (en)

Cited By (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1050478A (en) * 1996-04-19 1998-02-20 Toray Ind Inc Organic field emission element and manufacture thereof
JPH10268798A (en) * 1997-03-27 1998-10-09 Sanyo Electric Co Ltd Display device
US6008588A (en) * 1996-11-15 1999-12-28 Sanyo Electric Co., Ltd. Organic electroluminescent device driving method, organic electroluminescent apparatus and display device
US6037718A (en) * 1997-01-31 2000-03-14 Sanyo Electric Co., Ltd. Display unit having transistor of organic semiconductor stacked on organic electroluminescence element
JP2001076873A (en) * 1999-06-28 2001-03-23 Semiconductor Energy Lab Co Ltd Manufacture of electro-optical device
JP2001109402A (en) * 1995-11-17 2001-04-20 Semiconductor Energy Lab Co Ltd Display device
JP2001125510A (en) * 1995-11-17 2001-05-11 Semiconductor Energy Lab Co Ltd Active matrix type el display device
JP2002207451A (en) * 2001-01-09 2002-07-26 Hitachi Ltd Organic led display and its driving method
JP2002215097A (en) * 2001-01-22 2002-07-31 Sony Corp Electronic display and driving method therefor
US6433355B1 (en) 1996-06-05 2002-08-13 International Business Machines Corporation Non-degenerate wide bandgap semiconductors as injection layers and/or contact electrodes for organic electroluminescent devices
EP0961525A4 (en) * 1997-08-29 2003-01-22 Seiko Epson Corp Active matrix display
JP2003234195A (en) * 1996-09-19 2003-08-22 Seiko Epson Corp Display device
JP2004047494A (en) * 1997-02-17 2004-02-12 Seiko Epson Corp Light emitting display device
KR100424834B1 (en) * 1999-09-29 2004-03-27 산요덴키가부시키가이샤 An electro luminescence display apparatus
US6787887B2 (en) 1995-12-14 2004-09-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US6853083B1 (en) 1995-03-24 2005-02-08 Semiconductor Energy Laboratory Co., Ltd. Thin film transfer, organic electroluminescence display device and manufacturing method of the same
US6867434B2 (en) 1995-11-17 2005-03-15 Semiconductor Energy Laboratory Co., Ltd. Active matrix electro-luminescent display with an organic leveling layer
JP2005222074A (en) * 2005-03-22 2005-08-18 Hitachi Ltd Image display device
US6972746B1 (en) 1994-10-31 2005-12-06 Semiconductor Energy Laboratory Co., Ltd. Active matrix type flat-panel display device
US7180483B2 (en) 1997-02-17 2007-02-20 Seiko Epson Corporation Current-driven light-emitting display apparatus and method of producing the same
US7221339B2 (en) 1997-02-17 2007-05-22 Seiko Epson Corporation Display apparatus
JPWO2005017859A1 (en) * 2003-08-19 2007-10-04 富士電機ホールディングス株式会社 Display device and driving method thereof
US7697052B1 (en) 1999-02-17 2010-04-13 Semiconductor Energy Laboratory Co., Ltd. Electronic view finder utilizing an organic electroluminescence display
US7821065B2 (en) 1999-03-02 2010-10-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising a thin film transistor comprising a semiconductor thin film and method of manufacturing the same
US7851797B2 (en) 1999-12-14 2010-12-14 Semiconductor Energy Laboratory Co., Ltd. Display device including a color filter or color filters over a pixel portion and a driving circuit for driving the pixel portion
KR20140016825A (en) * 2012-07-31 2014-02-10 소니 주식회사 Display panel, display apparatus, and electronic system

Cited By (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6972746B1 (en) 1994-10-31 2005-12-06 Semiconductor Energy Laboratory Co., Ltd. Active matrix type flat-panel display device
US7298357B2 (en) 1994-10-31 2007-11-20 Semiconductor Energy Laboratory Co., Ltd. Active matrix type flat-panel display device
US7476900B2 (en) 1995-03-24 2009-01-13 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor, organic electroluminescence display device and manufacturing method of the same
US6992435B2 (en) 1995-03-24 2006-01-31 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor, organic electroluminescence display device and manufacturing method of the same
US6853083B1 (en) 1995-03-24 2005-02-08 Semiconductor Energy Laboratory Co., Ltd. Thin film transfer, organic electroluminescence display device and manufacturing method of the same
JP2001125510A (en) * 1995-11-17 2001-05-11 Semiconductor Energy Lab Co Ltd Active matrix type el display device
JP2001109402A (en) * 1995-11-17 2001-04-20 Semiconductor Energy Lab Co Ltd Display device
US6867434B2 (en) 1995-11-17 2005-03-15 Semiconductor Energy Laboratory Co., Ltd. Active matrix electro-luminescent display with an organic leveling layer
US6787887B2 (en) 1995-12-14 2004-09-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JPH1050478A (en) * 1996-04-19 1998-02-20 Toray Ind Inc Organic field emission element and manufacture thereof
US6433355B1 (en) 1996-06-05 2002-08-13 International Business Machines Corporation Non-degenerate wide bandgap semiconductors as injection layers and/or contact electrodes for organic electroluminescent devices
JP2003234195A (en) * 1996-09-19 2003-08-22 Seiko Epson Corp Display device
US6008588A (en) * 1996-11-15 1999-12-28 Sanyo Electric Co., Ltd. Organic electroluminescent device driving method, organic electroluminescent apparatus and display device
US6037718A (en) * 1997-01-31 2000-03-14 Sanyo Electric Co., Ltd. Display unit having transistor of organic semiconductor stacked on organic electroluminescence element
US8362489B2 (en) 1997-02-17 2013-01-29 Seiko Epson Corporation Current-driven light-emitting display apparatus and method of producing the same
JP2004047494A (en) * 1997-02-17 2004-02-12 Seiko Epson Corp Light emitting display device
US7880696B2 (en) 1997-02-17 2011-02-01 Seiko Epson Corporation Display apparatus
US8354978B2 (en) 1997-02-17 2013-01-15 Seiko Epson Corporation Display apparatus
US8188647B2 (en) 1997-02-17 2012-05-29 Seiko Epson Corporation Current-driven light-emitting display apparatus and method of producing the same
US8154199B2 (en) 1997-02-17 2012-04-10 Seiko Epson Corporation Display apparatus
US8247967B2 (en) 1997-02-17 2012-08-21 Seiko Epson Corporation Display apparatus
US7710364B2 (en) 1997-02-17 2010-05-04 Seiko Epson Corporation Display apparatus
US7180483B2 (en) 1997-02-17 2007-02-20 Seiko Epson Corporation Current-driven light-emitting display apparatus and method of producing the same
US7221339B2 (en) 1997-02-17 2007-05-22 Seiko Epson Corporation Display apparatus
US7253793B2 (en) 1997-02-17 2007-08-07 Seiko Epson Corporation Electro-luminiscent apparatus
JPH10268798A (en) * 1997-03-27 1998-10-09 Sanyo Electric Co Ltd Display device
US6734839B2 (en) 1997-08-29 2004-05-11 Seiko Epson Corporation Active matrix display device
EP0961525A4 (en) * 1997-08-29 2003-01-22 Seiko Epson Corp Active matrix display
US7697052B1 (en) 1999-02-17 2010-04-13 Semiconductor Energy Laboratory Co., Ltd. Electronic view finder utilizing an organic electroluminescence display
US8847316B2 (en) 1999-03-02 2014-09-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US9153604B2 (en) 1999-03-02 2015-10-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US7821065B2 (en) 1999-03-02 2010-10-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising a thin film transistor comprising a semiconductor thin film and method of manufacturing the same
JP2001076873A (en) * 1999-06-28 2001-03-23 Semiconductor Energy Lab Co Ltd Manufacture of electro-optical device
KR100424834B1 (en) * 1999-09-29 2004-03-27 산요덴키가부시키가이샤 An electro luminescence display apparatus
US7851797B2 (en) 1999-12-14 2010-12-14 Semiconductor Energy Laboratory Co., Ltd. Display device including a color filter or color filters over a pixel portion and a driving circuit for driving the pixel portion
US7417608B2 (en) 2001-01-09 2008-08-26 Hitachi, Ltd. Organic light emitting diode display and operating method of driving the same
KR100405877B1 (en) * 2001-01-09 2003-11-14 가부시키가이샤 히타치세이사쿠쇼 Organic light emitting diode display and operating method of driving the same
US6583581B2 (en) 2001-01-09 2003-06-24 Hitachi, Ltd. Organic light emitting diode display and operating method of driving the same
JP2002207451A (en) * 2001-01-09 2002-07-26 Hitachi Ltd Organic led display and its driving method
JP2002215097A (en) * 2001-01-22 2002-07-31 Sony Corp Electronic display and driving method therefor
JPWO2005017859A1 (en) * 2003-08-19 2007-10-04 富士電機ホールディングス株式会社 Display device and driving method thereof
JP2005222074A (en) * 2005-03-22 2005-08-18 Hitachi Ltd Image display device
KR20140016825A (en) * 2012-07-31 2014-02-10 소니 주식회사 Display panel, display apparatus, and electronic system
JP2014029423A (en) * 2012-07-31 2014-02-13 Sony Corp Display panel, display device and electronic apparatus

Also Published As

Publication number Publication date
JP3202219B2 (en) 2001-08-27

Similar Documents

Publication Publication Date Title
JPH04125683A (en) El display device
US11961491B2 (en) Electro-optical device
JP6987190B2 (en) Display device
KR100496071B1 (en) Display
USRE43701E1 (en) Liquid crystal display and method of fabricating the same having particular data signal transmission lines
KR100394006B1 (en) dual scan structure in current driving display element and production method of the same
US20070109465A1 (en) Display device emitting light from both sides
JP3799882B2 (en) Display device
JP2003345271A (en) Both-face display device
WO2016131224A1 (en) Display device and drive method thereof
JP2007173200A (en) Organic electroluminescent display device and its manufacturing method
WO2015096356A1 (en) Double-sided display panel
JP2006308897A (en) Organic el display device
CN107611279B (en) Optical thin film, organic electroluminescent display panel and preparation method thereof
JP3191081B2 (en) Display device
JP2013084477A (en) Transparent display device
TW200534203A (en) Pixel arrangement in a display and display employing the same
JPS61121033A (en) Liquid crystal color display device
US20080055509A1 (en) Color backlight device and liquid crystal display thereof
JP2002216961A (en) Manufacturing method of illumination device and liquid crystal display device as well as electronic equipment and illumination device
JPH08166589A (en) Liquid crystal display element
JPS62240936A (en) Projection type display device
Nakamura et al. 45‐3: A Novel Seamless Kawara‐type Multidisplay with Flexible OLED Panels Using an Optically Isotropic Film
JPS59143124A (en) Electro-optical device
KR102226426B1 (en) Transparent crystal display device