JPH0383063A - Pattern forming method - Google Patents
Pattern forming methodInfo
- Publication number
- JPH0383063A JPH0383063A JP1218687A JP21868789A JPH0383063A JP H0383063 A JPH0383063 A JP H0383063A JP 1218687 A JP1218687 A JP 1218687A JP 21868789 A JP21868789 A JP 21868789A JP H0383063 A JPH0383063 A JP H0383063A
- Authority
- JP
- Japan
- Prior art keywords
- oxygen plasma
- silylation
- difference
- resist
- development
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 27
- 238000006884 silylation reaction Methods 0.000 claims abstract description 23
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 22
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 22
- 239000001301 oxygen Substances 0.000 claims abstract description 22
- 238000001020 plasma etching Methods 0.000 claims abstract description 12
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 11
- 239000010703 silicon Substances 0.000 claims abstract description 11
- 125000001412 tetrahydropyranyl group Chemical group 0.000 claims abstract description 8
- 238000010438 heat treatment Methods 0.000 claims abstract description 4
- 238000009792 diffusion process Methods 0.000 claims abstract description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 5
- 239000003795 chemical substances by application Substances 0.000 abstract description 10
- 230000035945 sensitivity Effects 0.000 abstract description 5
- 239000000126 substance Substances 0.000 abstract description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 abstract 2
- 230000004304 visual acuity Effects 0.000 abstract 2
- 230000018109 developmental process Effects 0.000 description 15
- 239000004065 semiconductor Substances 0.000 description 6
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 4
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 4
- 239000002253 acid Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- VBYLGQXERITIBP-UHFFFAOYSA-N n-[dimethylamino(methyl)silyl]-n-methylmethanamine Chemical compound CN(C)[SiH](C)N(C)C VBYLGQXERITIBP-UHFFFAOYSA-N 0.000 description 3
- 150000003839 salts Chemical class 0.000 description 3
- WGGNJZRNHUJNEM-UHFFFAOYSA-N 2,2,4,4,6,6-hexamethyl-1,3,5,2,4,6-triazatrisilinane Chemical compound C[Si]1(C)N[Si](C)(C)N[Si](C)(C)N1 WGGNJZRNHUJNEM-UHFFFAOYSA-N 0.000 description 2
- CXJVMJWCNFOERL-UHFFFAOYSA-N benzenesulfonylsulfonylbenzene Chemical compound C=1C=CC=CC=1S(=O)(=O)S(=O)(=O)C1=CC=CC=C1 CXJVMJWCNFOERL-UHFFFAOYSA-N 0.000 description 2
- SBQIJPBUMNWUKN-UHFFFAOYSA-M diphenyliodanium;trifluoromethanesulfonate Chemical compound [O-]S(=O)(=O)C(F)(F)F.C=1C=CC=CC=1[I+]C1=CC=CC=C1 SBQIJPBUMNWUKN-UHFFFAOYSA-M 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- FUGYGGDSWSUORM-UHFFFAOYSA-N 4-hydroxystyrene Chemical compound OC1=CC=C(C=C)C=C1 FUGYGGDSWSUORM-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229920005601 base polymer Polymers 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- QVEIBLDXZNGPHR-UHFFFAOYSA-N naphthalene-1,4-dione;diazide Chemical compound [N-]=[N+]=[N-].[N-]=[N+]=[N-].C1=CC=C2C(=O)C=CC(=O)C2=C1 QVEIBLDXZNGPHR-UHFFFAOYSA-N 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- -1 poly(p-formyloxystyrene) Polymers 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 230000008961 swelling Effects 0.000 description 1
Landscapes
- Photosensitive Polymer And Photoresist Processing (AREA)
- Materials For Photolithography (AREA)
Abstract
Description
【発明の詳細な説明】
〔技術分野〕
本発明は、半導体製造プロセスのリソグラフィにおいて
、現像液を用いず、酸素プラズマエツチングによるドラ
イ現像によってパターンを形成せしめる技術に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field] The present invention relates to a technique for forming a pattern by dry development using oxygen plasma etching without using a developer in lithography in a semiconductor manufacturing process.
従来、レジストの現像方法としては有機溶剤等を現像液
として用いるウェット現像と呼ばれる方法が行われてい
る。Conventionally, a method called wet development using an organic solvent or the like as a developer has been used as a method for developing a resist.
しかしながら、現像液を用いた場合、現像時にレジスト
が膨潤や収縮を起こすために解像力の低下や微細パター
ンの寸法制御性の悪さ等の問題があり、その結果、歩留
り及び信頼性の低下を起こすという欠点が存在する。そ
こで、現像時に膨潤の無いドライ現像の可能なレジスト
に対する要望が高まっている。また、近午半導体プロセ
スの面から見てもＣＶＤやエツチングにおいては、プラ
ズマを用いたドライプロセスが確立されてきており、半
導体プロセス゛のプロセス全体にわたってドライ化を確
立する点からも、ドライ現像レジストプロセスが望まれ
ている。However, when a developer is used, the resist swells and contracts during development, resulting in problems such as a decrease in resolution and poor dimensional control of fine patterns, resulting in a decrease in yield and reliability. There are drawbacks. Therefore, there is an increasing demand for a resist that can be dry developed without swelling during development. Also, from the perspective of recent semiconductor processes, dry processes using plasma have been established in CVD and etching, and from the point of view of establishing dryness throughout the entire semiconductor process, the dry developing resist process is desired.
また、一方、ＬＳＩの高集積化に伴い、ハーフミクロン
さらにそれ以下のパターン形成技術が要求されている。On the other hand, as LSIs become more highly integrated, a technique for forming patterns of half micron or smaller is required.
微細パターンの複雑化、さらに基板の凹凸が大きくなっ
てきており、このような状況では単層レジストではカバ
ーできなくなり、多層レジスト法など新しい技術の導入
が必要不可欠となってくるものと予想されている。As micropatterns become more complex and the irregularities of substrates become larger, it is expected that single-layer resists will no longer be able to cover these situations, and that the introduction of new technologies such as multi-layer resist methods will become essential. There is.
近午、気根シリル化法を取り入れたドライ現像が、単層
で多層レジストに対比し得るハレーション防止効果をも
ち、さらに高反射率の段差基盤上で効果的であることが
着目されており、今後の有望な技術のひとつであるとさ
れている。Recently, dry development that incorporates the aerial root silylation method has been attracting attention because it has a single-layer antihalation effect comparable to that of multilayer resists, and is also effective on stepped substrates with high reflectance. It is said to be one of the most promising technologies.
気根シリル化を用いたドライ現像プロセスとして、実用
化に近いものとしてはヨーロッパ特許１８４５６７が見
出されるが、この特許に記載されたものは、レジスト材
料として、従来のポジ型フォトレジストと同様に、Ｏ−
ナフトキノンジアジドを用いるものであるため、その感
度が十分ではない。European Patent No. 184567 is found as a dry development process using aerial root silylation that is close to practical use, but the resist material described in this patent is O −
Since it uses naphthoquinonediazide, its sensitivity is not sufficient.
高感度が期待できるプロセスとしては、化学増幅系レジ
ストと気根シリル化ドライ現像プロセスを組合せる方法
があり、これは、米国特許４．５５２．８３３に記載さ
れている。この方法によれば、ポリ（ｐ−ホルミルオキ
シスチレン）、ポリ−（ｐ−ｔ−ブチルカルボニルオキ
シスチレン）などとオニウム塩を組合せたレジストを用
い、それを露光した後、シリル化を行うものであるが、
下記の如き欠点を有する。A process that is expected to provide high sensitivity is a method that combines a chemically amplified resist with an aerial silylation dry development process, which is described in US Pat. No. 4,552,833. According to this method, a resist consisting of a combination of poly(p-formyloxystyrene), poly-(pt-butylcarbonyloxystyrene), etc. and an onium salt is used, and after exposure, silylation is performed. Yes, but
It has the following drawbacks.
（１）形成するのは、ネガ型のパターンに限られている
。(1) Formation is limited to negative patterns.
（２）ベースとなるポリマーが、簡単には合成できない
。(2) The base polymer cannot be easily synthesized.
（３）酸発生剤であるオニウム塩が半導体素子に有害な
元素であるアンチモン、ヒ素等を含むため、半導体製造
用としては好ましくない。(3) Since the onium salt, which is an acid generator, contains elements such as antimony and arsenic that are harmful to semiconductor devices, it is not preferable for use in semiconductor manufacturing.
本発明者らは、高感度で、かつ、解像力に優れた酸素プ
ラズマによる現像が可能なパターン形成方法につき検討
を重ねた結果、化学増幅系であるテトラヒドロピラニル
エーテル化ポリヒドロキシスチレンと光酸発生剤を組合
せたレジストを用い、これを露光した後、加熱下、気根
拡散によるシリル化を行うと、露光部と未露光部との間
にシリコン濃度や膜厚の差が生じ、その差異を利用して
酸素プラズマエツチングによりパターン形成せしめるこ
とが可能であることを見い出した。本発明はかかる知見
にもとづいてなされたものである。As a result of repeated studies on a pattern forming method that can be developed with oxygen plasma, which has high sensitivity and excellent resolution, the present inventors discovered that a chemical amplification system, tetrahydropyranyl etherified polyhydroxystyrene, and a photoacid generator. When using a resist that combines the It has been discovered that it is possible to form a pattern by oxygen plasma etching. The present invention has been made based on this knowledge.
すなわち、本発明は、テトラヒドロピラニルエーテル化
したポリヒドロキシスチレンと光ａ発生剤より成るレジ
スト皮膜を基板上に形成し、パターン露光後、加熱下、
気根からの拡散によるシリル化を行い、その結果生ずる
露光部と未露光部とにおけるシリコン濃度および（また
は）膜厚の差により、両者間に酸素プラズマ耐性の差異
を生じせしめその差異を利用して、酸素プラズマエツチ
ングによる現像を行うことを特徴とするパターン形成方
法を提供するものである。That is, in the present invention, a resist film made of tetrahydropyranyl etherified polyhydroxystyrene and a photo-a generator is formed on a substrate, and after pattern exposure, heating is performed.
Silylation is performed by diffusion from the aerial roots, and the resulting difference in silicon concentration and/or film thickness between the exposed and unexposed areas causes a difference in oxygen plasma resistance between the two, and this difference can be exploited. , provides a pattern forming method characterized by performing development by oxygen plasma etching.
以下に本発明の詳細な説明する。The present invention will be explained in detail below.
レジスト中にシリコンが含有されている場合、レジスト
を酸素プラズマで処理をしても、表面において、シリコ
ンと酸素が反応してシリコン酸化物の皮膜が形成され、
はとんどエツチングされないことは周知のことであるが
、本発明の方法は、シリコンの酸素プラズマに対する耐
性を利用したドライ現像によるパターンを形成せしめる
ものである。If the resist contains silicon, even if the resist is treated with oxygen plasma, the silicon and oxygen will react on the surface and form a silicon oxide film.
Although it is well known that silicon is rarely etched, the method of the present invention forms a pattern by dry development utilizing silicon's resistance to oxygen plasma.
すなわち、本発明の方法によれば、シリル化により、レ
ジストの露光部と未露光部とにおいてシリコンの含有量
や膜厚の差異を生じさせ、その差異を利用して酸素プラ
ズマエツチングによる現像を行って、画像を形成させる
ものである。That is, according to the method of the present invention, silylation causes differences in silicon content and film thickness between exposed and unexposed areas of the resist, and this difference is used to perform development by oxygen plasma etching. This is used to form an image.
本発明方法においては、レジスト組成物として、テトラ
ヒドロピラニルエーテル化ポリヒドロキシスチレンと光
酸発生剤よりなるものを用いる。このレジスト組成物を
用いて、その皮膜を基板上に形成させ、パターン露光を
行なうと、光酸発生剤が分解し、酸を生成する。この酸
が触媒として作用して、テトラヒドロピラニルエーテル
化ポリヒドロキシスチレンのエーテル結合が解裂し、フ
ェノール性水酸基が生皮する。In the method of the present invention, a resist composition comprising tetrahydropyranyl etherified polyhydroxystyrene and a photoacid generator is used. When a film is formed on a substrate using this resist composition and pattern exposure is performed, the photoacid generator decomposes and generates acid. This acid acts as a catalyst to cleave the ether bonds of the tetrahydropyranyl etherified polyhydroxystyrene, forming raw phenolic hydroxyl groups.
次いで、シリル化処理によりそのフェノール性水酸基が
シリル化される。続く酸素プラズマ現像により未露光部
のみが除去されネガ型のパターンが得られる。一方、本
発明方法では、シリル化剤及び光酸発生剤の種類を選択
することによりポジ型のパターンを形成することができ
る。Next, the phenolic hydroxyl group is silylated by silylation treatment. Subsequent oxygen plasma development removes only the unexposed areas, yielding a negative pattern. On the other hand, in the method of the present invention, a positive pattern can be formed by selecting the types of silylating agent and photoacid generator.
この場合、前記の選択的シリル化のメカニズムと異なっ
た反応が生じていると考えられるがそのメカニズムにつ
いては、現在のところ解明するに至っていない。In this case, it is thought that a reaction different from the selective silylation mechanism described above is occurring, but the mechanism has not yet been elucidated.
本発明方法に使用される光酸発生剤としては、ジフェニ
ルジスルホン等のジスルホン化合物やオニウム塩類があ
げられるが、高感度で、かつ半導体製造に有害な金属不
純物を含まないジフェニルヨードニウムトリフルオロメ
タンスルホネートはその最も好ましい例である。シリル
化に用いるシリル化剤としては、ヘキサメチルジシラザ
ン、ビス（ジメチルアミノ）メチルシラン、ヘキサメチ
ルシクロトリシラザン等があげられる。Examples of photoacid generators used in the method of the present invention include disulfone compounds such as diphenyldisulfone and onium salts, but diphenyliodonium trifluoromethanesulfonate, which is highly sensitive and does not contain metal impurities harmful to semiconductor manufacturing, is one of them. This is the most preferred example. Examples of the silylating agent used for silylation include hexamethyldisilazane, bis(dimethylamino)methylsilane, hexamethylcyclotrisilazane, and the like.
上記のシリル化は、シリル化剤を加温してガス化して行
われるがその温度は、レジスト組成物の性質やシリル化
剤の物性に応じて適切に選択される。適切な温度を選択
することにより、良好なパターンが得られる。温度が低
すぎると全体にわたって、シリル化が進行せず、また高
すぎると露光部、未露光部共にシリル化が進行し、いず
れにせよ温度が適切でないと選択的シリル化を行うこと
ができない。本発明方法によるパターン形成の一例につ
いて以下に述べる。テトラヒドロピラニルエーテル化ポ
リヒドロキシスチレンと光酸発生剤とを溶剤に溶解した
感光液を、シリコンウェハに例えばスピンコーティング
により塗布し、レジスト皮膜を形成させる。The above silylation is carried out by heating the silylating agent to gasify it, and the temperature is appropriately selected depending on the properties of the resist composition and the physical properties of the silylating agent. A good pattern can be obtained by selecting an appropriate temperature. If the temperature is too low, silylation will not proceed throughout the film; if the temperature is too high, silylation will proceed in both exposed and unexposed areas; in any case, if the temperature is not appropriate, selective silylation cannot be carried out. An example of pattern formation by the method of the present invention will be described below. A photosensitive liquid in which tetrahydropyranyl etherified polyhydroxystyrene and a photoacid generator are dissolved in a solvent is applied to a silicon wafer by, for example, spin coating to form a resist film.
プリベータによる乾燥を行った後、光照射によるパター
ン露光を行なう。次いで、シリル化処理を行い、酸素プ
ラズマによるエツチングを行なうと露光部又は未露光部
が選択的にエツチング除去されてポジ型又はネガ型のパ
ターンが形成される。After drying using a pre-beta, pattern exposure is performed using light irradiation. Next, a silylation treatment is performed and etching is performed using oxygen plasma, whereby the exposed or unexposed portions are selectively etched away to form a positive or negative pattern.
本発明方法により、高感度な、酸素プラズマエツチング
による現像が可能で、また、シリル化剤及び光酸発生剤
の種類を選択することにより、ポジ型あるいはネガ型の
いずれのパターンの形成も可能なリソグラフィープロセ
スが提供されるので、その有用性は極めて大きい。The method of the present invention enables development by highly sensitive oxygen plasma etching, and by selecting the type of silylating agent and photoacid generator, it is possible to form either a positive or negative pattern. As a lithographic process is provided, its utility is enormous.
以下に本発明の実施例を掲げる。Examples of the present invention are listed below.
実施例 ｌ
レジストとして下記の組成によるものを調製し Ｉこ
。Example 1 A resist with the following composition was prepared.
.
テトラヒドロピラニルエーテル化
ポリ−ｐ−ヒドロキシスチレン ３．ＯＫ量ｍジフェ
ニルヨードニウムトリフ
ルオロメタンスルホネート ０．２〃シクロヘ
キサノン ９．０〃このレジストをシ
リコンウェハ上に０．７μ謂の厚さにスピンコードし、
９０°０，１０分のプリベーク後マスクアライナ−ＰＬ
Ａ−５２１Ｆ （キャノン（株）製）にて０．８秒露光
し、ヘキサメチルジシラザンをシリル化剤として用い、
９５°Ｃ１５分、シリル化を行った。次に、酸素圧５０
ｍｍ Ｔｏｒｒパワー密度０．４ｗ／ｃｍ”の条件で酸
素プラズマエツチングを７分行ったところ、０．５μ肩
の矩形性の良いネガ型パターンが形成された。Tetrahydropyranyl etherified poly-p-hydroxystyrene 3. OK amount m Diphenyliodonium trifluoromethanesulfonate 0.2〃Cyclohexanone 9.0〃This resist was spin-coded onto a silicon wafer to a thickness of 0.7μ,
90°0, 10 minute pre-bake mask aligner-PL
A-521F (manufactured by Canon Co., Ltd.) was used for 0.8 second exposure, and hexamethyldisilazane was used as the silylating agent.
Silylation was carried out at 95°C for 15 minutes. Next, oxygen pressure 50
When oxygen plasma etching was performed for 7 minutes at a power density of 0.4 w/cm'' torr, a negative pattern with good rectangularity of 0.5 μm was formed.
実施例 ２
実施例１で用いたレジスト組成物を用いて、実施例１に
おけると同じ操作で露光処理を露光時間０．２秒で露光
した後、シリル化剤としてヘキサメチルシクロトリシラ
ザンを用いて９５°Ｃ１３０分のシリル化を行った後、
実施例１と同様にして、酸素プラズマエツチングによる
現像を行ったところ、０．５μ扉の矩形性の良いポジ型
パターンが形成された。Example 2 Using the resist composition used in Example 1, the exposure process was carried out in the same manner as in Example 1 for an exposure time of 0.2 seconds, and then hexamethylcyclotrisilazane was used as the silylating agent. After silylation at 95°C for 130 minutes,
When development was carried out by oxygen plasma etching in the same manner as in Example 1, a positive pattern of 0.5 μm doors with good rectangularity was formed.
実施例 ３
実施例１で用いたレジストを用い、同じく露光処理とし
て露光時間０．４秒で露光した後、シリル化剤としてビ
ス（ジメチルアミノ）メチルシランを用いて９５℃、１
０分のシリル化を行った後、実施例１と同様にして酸素
プラズマエッチングによる現像を行ったところ、矩形性
の良い０．５μ真のポジ型パターンが形成された。Example 3 Using the resist used in Example 1, the same exposure treatment was performed for an exposure time of 0.4 seconds, and then the resist was exposed at 95° C. for 1 hour using bis(dimethylamino)methylsilane as a silylation agent.
After silylation for 0 minutes, development was performed by oxygen plasma etching in the same manner as in Example 1, and a 0.5μ true positive pattern with good rectangularity was formed.
実施例 ４ レジストとして下記の組成のものを調製した。Example 4 A resist having the following composition was prepared.
ジフェニルジスルホン ０．２〃シクロヘ
キサノン
９、Ｑ ｔｔ
実施例１におけると同様にして、スピンコード、プリベ
ークおよび１．０秒の露光を行った後、シリル化剤とし
てビス（ジメチルアミノ）メチルシランを用いて９５℃
、 １０分のシリル化した。Diphenyldisulfone 0.2 Cyclohexanone 9, Q tt After spin code, prebake and 1.0 second exposure in the same manner as in Example 1, 95% was added using bis(dimethylamino)methylsilane as the silylation agent. ℃
, 10 min silylation.
次いで、実施例１と同様にして、酸素プラズマエツチン
グによる現像を行ったところ、矩形性の良い０．５μ罵
のネガ型パターンが形成された。Next, development was performed by oxygen plasma etching in the same manner as in Example 1, and a negative pattern of 0.5 μm with good rectangularity was formed.
Claims (1)
チレンと光酸発生剤より成るレジスト皮膜を基板上に形
成し、パターン露光後、加熱下、気根からの拡散による
シリル化を行い、その結果生ずる露光部と未露光部とに
おけるシリコン濃度および（または）膜厚の差により、
両者間に酸素プラズマ耐性の差異を生じせしめその差異
を利用して、酸素プラズマエッチングによる現像を行う
ことを特徴とするパターン形成方法。A resist film consisting of tetrahydropyranyl etherified polyhydroxystyrene and a photoacid generator is formed on a substrate, and after pattern exposure, silylation is performed by diffusion from aerial roots under heating, and the resulting exposed and unexposed areas are Due to the difference in silicon concentration and/or film thickness between
A pattern forming method characterized by creating a difference in oxygen plasma resistance between the two and utilizing the difference to perform development by oxygen plasma etching.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1218687A JPH0383063A (en) | 1989-08-28 | 1989-08-28 | Pattern forming method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1218687A JPH0383063A (en) | 1989-08-28 | 1989-08-28 | Pattern forming method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0383063A true JPH0383063A (en) | 1991-04-09 |
Family
ID=16723842
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1218687A Pending JPH0383063A (en) | 1989-08-28 | 1989-08-28 | Pattern forming method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0383063A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0442231A (en) * | 1990-06-08 | 1992-02-12 | Mitsubishi Electric Corp | Pattern forming method |
| JPH04287047A (en) * | 1991-03-15 | 1992-10-12 | Mitsubishi Electric Corp | Formation of pattern and production of photomask |
| JPH05232707A (en) * | 1991-11-22 | 1993-09-10 | Internatl Business Mach Corp <Ibm> | Positive resist image forming method |
| US5468589A (en) * | 1991-06-18 | 1995-11-21 | Wako Pure Chemical Industries, Ltd. | Resist material and pattern formation process |
| EP0704762A1 (en) | 1994-09-02 | 1996-04-03 | Wako Pure Chemical Industries Ltd | Resist material and pattern formation |
| EP0780732A2 (en) | 1995-12-21 | 1997-06-25 | Wako Pure Chemical Industries Ltd | Polymer composition and resist material |
| EP0789279A1 (en) | 1996-02-09 | 1997-08-13 | Wako Pure Chemical Industries Ltd | Polymer and resist material |
| US6475706B1 (en) | 1999-03-12 | 2002-11-05 | Matsushita Electric Industrial Co., Ltd. | Pattern formation method |
-
1989
- 1989-08-28 JP JP1218687A patent/JPH0383063A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0442231A (en) * | 1990-06-08 | 1992-02-12 | Mitsubishi Electric Corp | Pattern forming method |
| JPH04287047A (en) * | 1991-03-15 | 1992-10-12 | Mitsubishi Electric Corp | Formation of pattern and production of photomask |
| US5468589A (en) * | 1991-06-18 | 1995-11-21 | Wako Pure Chemical Industries, Ltd. | Resist material and pattern formation process |
| US5670299A (en) * | 1991-06-18 | 1997-09-23 | Wako Pure Chemical Industries, Ltd. | Pattern formation process |
| JPH05232707A (en) * | 1991-11-22 | 1993-09-10 | Internatl Business Mach Corp <Ibm> | Positive resist image forming method |
| EP0704762A1 (en) | 1994-09-02 | 1996-04-03 | Wako Pure Chemical Industries Ltd | Resist material and pattern formation |
| EP0780732A2 (en) | 1995-12-21 | 1997-06-25 | Wako Pure Chemical Industries Ltd | Polymer composition and resist material |
| EP0789279A1 (en) | 1996-02-09 | 1997-08-13 | Wako Pure Chemical Industries Ltd | Polymer and resist material |
| US6475706B1 (en) | 1999-03-12 | 2002-11-05 | Matsushita Electric Industrial Co., Ltd. | Pattern formation method |
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