JPH0376109A - Resist coating process - Google Patents
Resist coating processInfo
- Publication number
- JPH0376109A JPH0376109A JP21186489A JP21186489A JPH0376109A JP H0376109 A JPH0376109 A JP H0376109A JP 21186489 A JP21186489 A JP 21186489A JP 21186489 A JP21186489 A JP 21186489A JP H0376109 A JPH0376109 A JP H0376109A
- Authority
- JP
- Japan
- Prior art keywords
- resist
- organic solvent
- coated
- wafer
- ethylcellosolveacetate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000576 coating method Methods 0.000 title claims abstract description 17
- 239000003960 organic solvent Substances 0.000 claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 239000004065 semiconductor Substances 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims abstract description 7
- 239000003595 mist Substances 0.000 claims abstract description 6
- 239000011248 coating agent Substances 0.000 claims description 8
- 238000004528 spin coating Methods 0.000 claims description 3
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 abstract description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 8
- 229910052710 silicon Inorganic materials 0.000 abstract description 8
- 239000010703 silicon Substances 0.000 abstract description 8
- 230000002209 hydrophobic effect Effects 0.000 abstract description 6
- 238000007599 discharging Methods 0.000 abstract description 3
- 239000010409 thin film Substances 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 9
- 239000010408 film Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000003504 photosensitizing agent Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- 229930192627 Naphthoquinone Natural products 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000013543 active substance Substances 0.000 description 1
- 229920005601 base polymer Polymers 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 125000001165 hydrophobic group Chemical group 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002791 naphthoquinones Chemical class 0.000 description 1
- 239000012454 non-polar solvent Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 239000002798 polar solvent Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】 ［産業上の利用分野コ 本発明は、レジストのコーティング方法に関する。[Detailed description of the invention] [Industrial application fields] The present invention relates to a resist coating method.
［発明の概要］
本発明は、レジストを半導体基板・上にコーティングす
る方法において、
有機溶媒のスピンコーティング又は有機溶媒蒸気、又は
有機溶媒のミストによる有機溶媒処理を前記半導体基板
表面に施した後、レジストをコーティングすることによ
り、
レジストの濡れ性を向上させ、密着性を良好となし、レ
ジスト膜の均一性を向上させるようにしたものである。[Summary of the Invention] The present invention provides a method for coating a semiconductor substrate with a resist, which comprises: after applying an organic solvent treatment using organic solvent spin coating, organic solvent vapor, or organic solvent mist to the surface of the semiconductor substrate; By coating the resist, the wettability of the resist is improved, the adhesion is improved, and the uniformity of the resist film is improved.
［従来の技術Ｊ
レジスト膜のコーティングは、例えばシリコンウェハ、
シリコンナイトライド（Ｓ ｉｓＮ ４）Ｉｌｌ 、
Ｓ１０ｗ膜、多結晶シリコン膜、アルミニウム膜。[Prior art J] Resist film coating is performed on silicon wafers, for example.
Silicon nitride (S isN 4) Ill,
S10w film, polycrystalline silicon film, aluminum film.
タングステンシリサイド（Ｗ Ｓ ｉ ＊）膜等の各種
の材料の上に行なわれる。これらの材料表面は、親水性
のものと、疎水性のものとに分類されるが、通常は基板
等の表面をヘキサメチルジシラザン（ＨＭＤＳ）の気相
処理によって表面の極性を疎水性に近づけてレジストの
極性（非極性、疎水性）に近づけて濡れ性を改善し、コ
ーティングの均一性を図っている。この種の従来技術と
しては、特開昭６０−２１３０２５号公報記載の技術が
知られている。It is performed on various materials such as tungsten silicide (W Si *) film. The surfaces of these materials are classified into those that are hydrophilic and those that are hydrophobic, but usually the surface of the substrate, etc. is treated in a gas phase with hexamethyldisilazane (HMDS) to bring the polarity of the surface closer to hydrophobic. This approach improves wettability by bringing the polarity closer to that of the resist (non-polar, hydrophobic) and ensuring uniform coating. As a conventional technique of this type, a technique described in Japanese Patent Laid-Open No. 60-213025 is known.
［発明が解決しようとする課題］
しかしながら、このような従来方法においては、例えば
アルミニウム基板ではＨＭＤＳ処理は原理的に効果がな
く、通常はそのままレジストをコーティングしているが
、レジストの種類によってその極性の違いから良い濡れ
性を得ることが出来ず、ともすると所謂ハジキ現象が生
じ、レジストがコーティングされない場所が生じる問題
点を有していた。[Problems to be Solved by the Invention] However, in such conventional methods, for example, HMDS treatment is in principle ineffective on aluminum substrates, and usually the resist is coated as is, but the polarity may vary depending on the type of resist. Due to the difference in coating properties, good wettability cannot be obtained, and a so-called repellency phenomenon occurs, resulting in the problem that some areas are not coated with the resist.
このようなコーティングされない面が微小でも生じると
、当然そこではパターニングが行なわれないことになり
、ＬＳＩ製造上に大きな問題となっている。If such uncoated surfaces occur even if they are minute, patterning will naturally not be performed there, which poses a major problem in LSI manufacturing.
本発明は、このような従来の問題点に着目して創案され
たものであって、レジストの濡れ性、密着性を向上させ
た均一なレジストのコーティング方法を得んとするもの
である。The present invention was devised in view of these conventional problems, and aims to provide a uniform resist coating method that improves the wettability and adhesion of the resist.
［課題を解決するための手段］
そこで、本発明は、レジストを半導体基板上にコーティ
ングする方法において、有機溶媒のスピンコーティング
又は有機溶媒蒸気、又は有機溶媒のミストによる有機溶
媒処理を前記半導体基板表面に施した後、レジストをコ
ーティングすることを、その解決手段としている。[Means for Solving the Problems] Accordingly, the present invention provides a method for coating a semiconductor substrate with a resist, in which organic solvent treatment using organic solvent spin coating, organic solvent vapor, or organic solvent mist is applied to the surface of the semiconductor substrate. The solution is to coat the resist with a resist.
［作用コ
レジスト材料に用いられる有機溶媒は、例えば水、エタ
ノール等のような完全な極性溶媒でもなく、又、例えば
トルエン等のハイドロカーボン系のような完全な非極性
溶媒でもなく中間的極性のものである。そして、溶媒分
子が基板に対して表面処理される場合、活性剤と同様基
板の極性に近い分子の枝を基板に向けて吸着される。例
えば、基板が中程度の極性であれば、ランダムにあるい
は両方の分子の枝が吸着される。[The organic solvent used in the working co-resist material is neither a completely polar solvent such as water, ethanol, etc. nor a completely non-polar solvent such as a hydrocarbon system such as toluene, but one of intermediate polarity. It is. When the surface of a substrate is treated with solvent molecules, the molecules are adsorbed toward the substrate with molecular branches close to the polarity of the substrate, similar to the active agent. For example, if the substrate is moderately polar, randomly or both molecular branches will be adsorbed.
このような基板表面の状態でレジストをコーティングす
れば、もともとこの溶媒はレジストの中味（ベースポリ
マー及び感光剤）を良く溶解するものであるため、基板
表面の溶解分子ともなじみがよく、結果として良い濡れ
性が得られ、密着性が向上し、コーティングしたレジス
トの均一性が得られる。If a resist is coated on the substrate surface in this condition, this solvent will dissolve the contents of the resist (base polymer and photosensitizer) well, so it will be compatible with the dissolved molecules on the substrate surface, resulting in a good result. It provides wettability, improves adhesion, and provides uniformity of the coated resist.
［実施例］
以下、本発明に係るレジストのコーティング方法の詳細
を図面に示す実施例に基づいて説明する。[Example] Hereinafter, details of the resist coating method according to the present invention will be described based on Examples shown in the drawings.
本実施例においては、第１図Ａに示すように、シリコン
ウェハｌをスピンナ２に真空吸着させた後、スピンナ２
上方に設けである有機溶媒吐出ノズル３より、レジスト
の有機溶媒であるエチルセロソルブアセテート（ＥＣＡ
）４を吐出させ、基板表面の処理を行なう。In this embodiment, as shown in FIG. 1A, after the silicon wafer l is vacuum-adsorbed onto the spinner
From the organic solvent discharge nozzle 3 provided above, ethyl cellosolve acetate (ECA), which is an organic solvent for the resist, is discharged.
) 4 is discharged to process the substrate surface.
この場合、表面処理前において、シリコンウェハ１の表
面に疎水性基がある場合は、第２図Ａに示すような状態
であり、親水性がある場合は、第２図Ｂに示すような状
態である。これら疎水性、親水性基を有するシリコンウ
ェハ（基板）に対し、エチルセロソルブアセテート４を
処理すると、第２図Ｃに示すように、エチルセロソルブ
アセテート４側の分子の枝とウェハ表面の極性基が吸着
する。このため、ウェハ表面にエチルセロソルブアセテ
ートの膜が薄く形成され、レジストの濡れ性。In this case, before surface treatment, if the surface of the silicon wafer 1 has hydrophobic groups, it will be in the state shown in FIG. 2A, and if it is hydrophilic, it will be in the state shown in FIG. 2B. It is. When a silicon wafer (substrate) having these hydrophobic and hydrophilic groups is treated with ethyl cellosolve acetate 4, as shown in Figure 2C, the molecular branches on the ethyl cellosolve acetate 4 side and the polar groups on the wafer surface are Adsorb. For this reason, a thin film of ethyl cellosolve acetate is formed on the wafer surface, improving the wettability of the resist.
密着性が向上する。Adhesion is improved.
なお、このような表面処理後には、ベーキングは行なわ
ない。Note that baking is not performed after such surface treatment.
次に、第１図Ｂに示すように、レジスト吐出ノズル５よ
りレジスト６を吐出させることにより、ウェハ上でハジ
キ現象の生じない、均一性を有するレジスト膜を形成す
ることが可能となる。Next, as shown in FIG. 1B, by discharging the resist 6 from the resist discharging nozzle 5, it becomes possible to form a uniform resist film on the wafer without causing repellency.
なお、レジストとしては、例えば、アルカリ可溶性のフ
ェノール樹脂に感光剤としてナフトキノンシアシトを用
いたポジ型レジストの他各種のレジスト材料が適用され
得る。Note that as the resist, for example, various resist materials such as a positive resist using an alkali-soluble phenol resin and naphthoquinone siacite as a photosensitizer can be applied.
また、上記した実施例は、有機溶媒としてエチルセロソ
ルブアセテートを適用したが、他の有機溶媒を適用して
勿論よい。Further, in the above embodiments, ethyl cellosolve acetate was used as the organic solvent, but other organic solvents may of course be used.
また、上記実施例においては、有機溶媒をスピンコーテ
ィングしたが、有機溶媒を蒸気にして吹き付ける手段、
又は有機溶媒をミスト状にして吹き付ける等の手段を用
いても、同様の作用を得ることが可能である。In addition, in the above examples, the organic solvent was spin-coated, but it is also possible to
Alternatively, the same effect can be obtained by spraying an organic solvent in the form of a mist.
さらに、レジストを形成する下地としては、シリコンウ
ェハに直接レジストを配す場合の他、各種の材料を適用
することが可能である。Furthermore, as the base for forming the resist, it is possible to use various materials in addition to the case where the resist is directly placed on the silicon wafer.
本発明に係るレジストのコーティング方法にあっては、
この他、各種の設計変更が可能である。In the resist coating method according to the present invention,
In addition, various design changes are possible.
［発明の効果コ
以上の説明から明らかなように、本発明に係るレジスト
のコーティング方法よれば、レジストを形成しようとす
る下地材の表面のレジストに対する濡れ性、密着性を良
好にし、コーティングされるレジストのハジキ現象がな
く、均一なコーテイング膜が形成出来る効果がある。[Effects of the Invention] As is clear from the above description, the resist coating method according to the present invention improves the wettability and adhesion of the surface of the base material on which the resist is to be formed to the resist, and improves the coating. There is no resist repellency, and a uniform coating film can be formed.
このため、ＬＳＩパターンの信頼性を向上させる効果が
ある。This has the effect of improving the reliability of the LSI pattern.
第１図Ａ及び第１図Ｂは本発明に係るレジストのコーテ
ィング方法の実施例の工程を示す側面図、第２図Ａは基
板表面が疎水性の場合の説明図、第２図Ｂは基板表面が
親水性の場合の説明図、第２図ＣはＥＣＡ処理後の表面
状態を示す説明図である。
ｌ・・・シリコンウェハ、２・・・スピンナ、３・・・
有機溶媒吐出ノズル、４・・・ＥＣＡ（エチルセロソル
ブアセテート）、５・・・レジスト吐出ノズル、６・・
・レジスト。
基本に表面が正常、氷・１１基の場合の古か月図第２図
Ａ
史 ａナイフυ の 工、不Ｉ を示Ｔイ貝ＩＪ 面
図基、抜表面が゛親木Ｊ１生蟇の爆音の甑明図第２図Ｂ
（突 スキ？ イダリ ）
第１図Ｂ
ＥＣＡ処理種の麦市伏糎と示す説明図
第２図Ｃ1A and 1B are side views showing steps of an embodiment of the resist coating method according to the present invention, FIG. 2A is an explanatory diagram when the substrate surface is hydrophobic, and FIG. 2B is a substrate An explanatory diagram when the surface is hydrophilic, and FIG. 2C is an explanatory diagram showing the surface state after ECA treatment. l...Silicon wafer, 2...Spinner, 3...
Organic solvent discharge nozzle, 4...ECA (ethyl cellosolve acetate), 5...Resist discharge nozzle, 6...
・Resist. Basically, the surface is normal, and the paleomoon map in the case of 11 ice cubes is shown in Figure 2.
Figure 2B (Tsu-suki? Idari) Figure 1B An explanatory diagram showing the ECA-treated variety Mugiichi Fushiki Figure 2C
Claims (1)
において、 有機溶媒のスピンコーティング又は有機溶媒蒸気、又は
有機溶媒のミストによる有機溶媒処理を前記半導体基板
表面に施した後、レジストをコーティングすることを特
徴とするレジストのコーティング方法。(1) A method of coating a resist on a semiconductor substrate, characterized in that the semiconductor substrate surface is subjected to an organic solvent treatment using organic solvent spin coating, organic solvent vapor, or organic solvent mist, and then the resist is coated. Resist coating method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21186489A JPH0376109A (en) | 1989-08-17 | 1989-08-17 | Resist coating process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21186489A JPH0376109A (en) | 1989-08-17 | 1989-08-17 | Resist coating process |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0376109A true JPH0376109A (en) | 1991-04-02 |
Family
ID=16612875
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21186489A Pending JPH0376109A (en) | 1989-08-17 | 1989-08-17 | Resist coating process |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0376109A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2277892A (en) * | 1993-05-13 | 1994-11-16 | Fujitsu Ltd | Apparatus for spin coating semiconductor wafers using solvent discharge prior to coating soln discharge |
| JP2007187593A (en) * | 2006-01-16 | 2007-07-26 | Hitachi Ltd | Inspection device for piping and inspection method for piping |
| US7615431B2 (en) | 2005-01-25 | 2009-11-10 | Fujitsu Microelectronics Limited | Manufacturing method of semiconductor device |
| EP2869352A1 (en) * | 2013-10-31 | 2015-05-06 | PVG Solutions Inc. | Solar cell fabrication method comprising spin-coating a substrate with a dopant composition |
-
1989
- 1989-08-17 JP JP21186489A patent/JPH0376109A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2277892A (en) * | 1993-05-13 | 1994-11-16 | Fujitsu Ltd | Apparatus for spin coating semiconductor wafers using solvent discharge prior to coating soln discharge |
| GB2277892B (en) * | 1993-05-13 | 1997-08-20 | Fujitsu Ltd | Method and apparatus for spin coating and a method for manufacturing a semiconductor device |
| US7615431B2 (en) | 2005-01-25 | 2009-11-10 | Fujitsu Microelectronics Limited | Manufacturing method of semiconductor device |
| JP2007187593A (en) * | 2006-01-16 | 2007-07-26 | Hitachi Ltd | Inspection device for piping and inspection method for piping |
| EP2869352A1 (en) * | 2013-10-31 | 2015-05-06 | PVG Solutions Inc. | Solar cell fabrication method comprising spin-coating a substrate with a dopant composition |
| US9269581B2 (en) | 2013-10-31 | 2016-02-23 | Pvg Solutions Inc. | Method of producing solar cell |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6171401B1 (en) | Process liquid dispense apparatus | |
| KR0127145B1 (en) | Process for coating photoresist composition onto a substrate | |
| US5554567A (en) | Method for improving adhesion to a spin-on-glass | |
| JPH03502255A (en) | Use of specific mixtures of ethyl lactate and methyl ethyl ketone to remove unwanted peripheral material (e.g. edge beads) from photoresist coated substrates | |
| US6946407B2 (en) | Method for pretreating a substrate prior to application of a polymeric coat | |
| JPH05226241A (en) | Manufacture of semiconductor device | |
| US5766367A (en) | Method for preventing micromechanical structures from adhering to another object | |
| JPH0376109A (en) | Resist coating process | |
| US6066578A (en) | Method and system for providing inorganic vapor surface treatment for photoresist adhesion promotion | |
| CN1090817C (en) | Method for forming fine patterns of semiconductor device | |
| KR20020082794A (en) | A method of forming a resist film | |
| KR20110096076A (en) | Carrier solvent compositions, coatings compositions, and methods to produce thick polymer coatings | |
| US8927058B2 (en) | Photoresist coating process | |
| CN108231547B (en) | Method for forming semiconductor device | |
| US5913979A (en) | Method for removing spin-on-glass at wafer edge | |
| JPH07142344A (en) | Method for developing photoresist | |
| US6992023B2 (en) | Method and system for drying semiconductor wafers in a spin coating process | |
| US20020119655A1 (en) | Process for treating high aspect ratio structures | |
| JPH0555129A (en) | Resist coating method | |
| US6033988A (en) | Film forming methods | |
| JPH09283458A (en) | Coating diffusing agent for semiconductor | |
| CN117130225A (en) | Method for coating photoresist and method for manufacturing semiconductor device | |
| JPH02295107A (en) | Manufacture of semiconductor device | |
| JPH06168872A (en) | Fabrication of semiconductor device | |
| KR950021162A (en) | Method of forming insulating film of semiconductor device |