JPH0368744A - Thin magnetic film - Google Patents

Thin magnetic film

Info

Publication number
JPH0368744A
JPH0368744A JP20245189A JP20245189A JPH0368744A JP H0368744 A JPH0368744 A JP H0368744A JP 20245189 A JP20245189 A JP 20245189A JP 20245189 A JP20245189 A JP 20245189A JP H0368744 A JPH0368744 A JP H0368744A
Authority
JP
Japan
Prior art keywords
total
thin film
magnetic
weight
cobalt
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP20245189A
Other languages
Japanese (ja)
Inventor
Ken Takahashi
研 高橋
Terunobu Miyazaki
照宣 宮崎
Minoru Takahashi
実 高橋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tohoku Tokushuko KK
Tohoku Steel Co Ltd
Original Assignee
Tohoku Tokushuko KK
Tohoku Steel Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tohoku Tokushuko KK, Tohoku Steel Co Ltd filed Critical Tohoku Tokushuko KK
Priority to JP20245189A priority Critical patent/JPH0368744A/en
Publication of JPH0368744A publication Critical patent/JPH0368744A/en
Pending legal-status Critical Current

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Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00Thin magnetic films, e.g. of one-domain structure
    • H01F10/08Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
    • H01F10/10Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
    • H01F10/12Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys
    • H01F10/14Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys containing iron or nickel
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/18Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by cathode sputtering
    • H01F41/183Sputtering targets therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Thin Magnetic Films (AREA)

Abstract

PURPOSE:To produce a thin magnetic film having high magnetic permeability and saturation magnetic flux density in a high-frequency region by forming a thin film by a sputtering method by using an Fe-Ni-Co alloy with a specific composition as a target. CONSTITUTION:High-purity Ni, Fe, Nb, Ta, and Co are blended in the prescribed proportion, which is melted and cast in vacuum. The resulting Fe-Ni-Co-Nb-Ta alloy is worked into a target, and a thin film having a composition consisting of, by weight, <2% Co, 44-55% (Ni+Co), 0.5-5.5%, in total, of Nb and/or Ta, and the balance Fe is formed on a glass substrate in a reduced-pressure Ar-gas atmosphere, e.g., by a sputtering method. If necessary, 0.1-2%, in total, of one or more elements among Mo, V, Cr, W, and Cu for improving magnetic properties, 0.001-0.5% of one or more elements among Ti, Zr, and Hf as grain-refining elements, or 0.001-2%, in total, of one or more elements among Ag, Au, Ru, Rh, Pd, and Pt as corrosion resistance-improving elements can be incorporated to the above thin film.

Description

【発明の詳細な説明】 〈イ〉産業上の利用分野 本発明は、磁性薄膜に関し、特に、高周波磁気特性に優
れる磁性薄膜に関する。
DETAILED DESCRIPTION OF THE INVENTION <A> Industrial Application Field The present invention relates to a magnetic thin film, and particularly to a magnetic thin film with excellent high frequency magnetic properties.

本発明は、また、記録媒体、磁気ヘッド及び磁心に利用
され、高周波磁気特性に優れる磁性薄膜に関し、特に、
例えば8IIIIlビデオテープレコーダ(VTR)、
ディジタルオーディオテープレコーダ(DAT) 、高
密度ディジタルデイスプレィ及び高密度データシステム
(ODD ”)等の高密度記録再生用の薄膜ヘッド、ま
た、メタルインギャプ(旧G)ヘッド、磁気抵抗(MR
)ヘッド等の磁気ヘッド用として、或は垂直磁気記録媒
体の下地用の磁性薄膜として、また、スイッチング電源
の高周波領域で使用される電子機器の磁心として利用さ
れる磁性薄膜に関する。
The present invention also relates to a magnetic thin film that is used in recording media, magnetic heads, and magnetic cores and has excellent high-frequency magnetic properties, and in particular,
For example, 8III video tape recorder (VTR),
Thin-film heads for high-density recording and playback such as digital audio tape recorders (DAT), high-density digital displays, and high-density data systems (ODD), as well as metal-in-gap (formerly G) heads and magnetoresistive (MR) heads.
) The present invention relates to a magnetic thin film that is used as a magnetic head such as a magnetic head, as a base of a perpendicular magnetic recording medium, and as a magnetic core of electronic equipment used in the high frequency range of a switching power supply.

(口〉従来技術 磁気記録分野における磁性材料の進歩は目覚ましく、高
密度化のため現在磁性薄膜を利用した記録媒体、磁気ヘ
ッドの研究が活発である。また電子機器の小型化高性能
化のため動作周波数は次第に高周波化に向かっており、
使用される磁心材料も薄膜化する傾向にある。
(Koto) Prior art The progress of magnetic materials in the field of magnetic recording is remarkable, and research is currently active on recording media and magnetic heads that use magnetic thin films to increase density. Also, in order to increase the size and performance of electronic equipment, Operating frequencies are gradually moving toward higher frequencies.
The magnetic core materials used are also becoming thinner.

高周波領域で使用される材料としては、現在フェライト
が最も広く使用されている。しかし、フェライトは飽和
磁束密度が低く高密度記録用としては不適当であり、ま
た、超高周波領域では透磁率が大幅に低下する。
Ferrite is currently the most widely used material in the high frequency range. However, ferrite has a low saturation magnetic flux density, making it unsuitable for high-density recording, and its magnetic permeability decreases significantly in the ultra-high frequency range.

そこで、高密度記録用の磁気ヘッドとして飽和磁束密度
の高い磁性薄膜が嘱望され、N 1−Fe系合金、Fe
−5i−AI系合金及びCo系のアモルファス合金等の
磁性薄膜が実用化されつつある。
Therefore, magnetic thin films with high saturation magnetic flux density are desired as magnetic heads for high-density recording, and N1-Fe-based alloys, Fe
Magnetic thin films such as -5i-AI alloys and Co-based amorphous alloys are being put into practical use.

(ハ〉発明が解決しようとする問題点 しかし、前記Ni−Fe系合金は前記Fe−5i−^1
系合金及びCo系のアモルファス合金に比べて磁気特性
が劣っている。また、Fe−5i−^1系合金は、最適
な条件下では優れた磁気特性を有する磁性薄膜を得るこ
とができるが、再現法に問題がある。
(C) Problems to be Solved by the Invention However, the Ni-Fe alloy is
Magnetic properties are inferior to Co-based alloys and Co-based amorphous alloys. Furthermore, although a Fe-5i-^1 alloy can produce a magnetic thin film with excellent magnetic properties under optimal conditions, there are problems with reproduction methods.

また、Co系アモルファス合金は、薄膜の状態では優れ
た特性を有するが、薄膜磁気ヘッドを製造する際の加熱
過程で磁気特性が劣化するので問題がある。
Further, although the Co-based amorphous alloy has excellent properties in the form of a thin film, there is a problem in that the magnetic properties deteriorate during the heating process when manufacturing a thin film magnetic head.

さらに以上のいずれの材料も、MHz以上の高周波領域
では著しく透磁率が低下するという問題がある。
Furthermore, all of the above-mentioned materials have a problem in that their magnetic permeability decreases significantly in a high frequency region of MHz or higher.

これらの問題を解決するために現在精力的な研究が続け
られているが、まだ成功には至っていない 本発明者らは、先に、従来の薄膜ヘッド等の磁性材料に
おける高周波領域での問題を解消することを目的として
、高飽和磁束密度及び熱安定性の見地より金属系の結晶
質磁性薄膜について多くの実験を行い、殊に、75乃至
82重量%ニッケル鉄(Ni−Fe)合金に、各種元素
を添加したターゲットを用いて成膜した結晶質磁性薄膜
について、高周波領域における透磁率を調査して、先に
、組成が、ニッケル(Ni)75〜82重量%、ニオブ
(Nb)及びタンタル(丁a)の一種類又は二種類の合
計が1〜8重量%、モリブデン(No)2重量%以下並
びに残余が実質的に鉄Feと不可避的不純物の組成より
なることを特徴とする高周波磁気特性に優れる磁性薄膜
を発明したく特願昭62−284461号参照。)。
Although intensive research is currently being carried out to solve these problems, the inventors have not yet achieved success. In order to solve this problem, we conducted many experiments on metal-based crystalline magnetic thin films from the viewpoint of high saturation magnetic flux density and thermal stability. We investigated the magnetic permeability in the high frequency range of crystalline magnetic thin films formed using targets doped with various elements, and found that the composition was 75 to 82% by weight of nickel (Ni), niobium (Nb), and tantalum. High-frequency magnetism characterized in that the total content of one or two types of (Cho a) is 1 to 8% by weight, molybdenum (No. For the purpose of inventing a magnetic thin film with excellent characteristics, see Japanese Patent Application No. 284461/1983. ).

これらの発明に続いて、本発明者らは、更に、高飽和磁
束密度、熱安定性及び再現性の見地より、75乃至83
重量%ニッケルー鉄(Ni−Fe)合金基材に、各種元
素を添加したターゲットを用いて成膜した結晶性磁性薄
膜について、更に多くの実験を行い、高周波域の透磁率
を調査して、特に、組成が、コバルト2重量%以下、ニ
ッケルがコバルトとの合計量で75〜83重量%、ニオ
ブ及びタンタルの一種類又は二種類以上が総量で1〜8
重量%、モリブデン、バナジウム、クロム、タングステ
ン及び銅(Cu)の何れか一種類又は二種類以上が総量
で0.01〜2重量%、さらに、チタン、ジルコニウム
及びハフニウムの何れか一種類又は二種類以上が総量で
0.01〜2重量%、残余の鉄並びに少量の不純物とか
らなる磁性薄膜が、高周波域迄高い透磁率を維持し、か
つ再現性よく製造できることを発明した。(特願昭63
−66283号参照、)そして、更に先に発明したNi
−Fe−Nb系合金の耐食性改善に鋭意検討の結果、組
成がコバルト2重量%以下、ニッケルがコバルトとの合
計量で73〜82重量%、ニオブ及びタンタルの一種又
は二種類が総量で1〜8重量%、モリブデン、バナジウ
ム、クロム、タングステン及び銅のいずれか一種又は二
種以上が総量で0.01〜2重量%、チタン、ジルコニ
ウム、及びハフニウムのいずれか一種又は二種以上が総
量で0.01〜2%、さらに銀、金、ルテニウム、ロジ
ウム、パラジウム及び白金のいずれか一種又は二種以上
が総量でo、ooi〜2重量%並びに残余の鉄及び少量
の不純物とからなることを特徴とする磁性薄膜が高周波
域迄高い透磁率を維持し、耐食性が良好で、かつ再現性
よく製造できることを発明した。(特願昭83−797
41号参照、)シかし、これらいずれの磁性薄膜もNi
含有が多いために飽和磁束密度が7.000〜8,0O
OGと低いことが欠点であった。
Following these inventions, the present inventors further developed 75 to 83 from the viewpoint of high saturation magnetic flux density, thermal stability, and reproducibility.
We conducted more experiments on crystalline magnetic thin films formed using targets containing various elements on a weight% nickel-iron (Ni-Fe) alloy base material, and investigated the magnetic permeability in the high frequency range. , the composition is 2% by weight or less of cobalt, 75 to 83% by weight of nickel in total with cobalt, and 1 to 8% in total of one or more types of niobium and tantalum.
0.01 to 2% by weight of one or more of molybdenum, vanadium, chromium, tungsten, and copper (Cu) in a total amount of 0.01 to 2% by weight, and one or two of titanium, zirconium, and hafnium. The inventors have discovered that a magnetic thin film consisting of a total of 0.01 to 2% by weight of the above, with the remainder of iron and a small amount of impurities maintains high magnetic permeability up to a high frequency range and can be produced with good reproducibility. (Special application 1986
-66283), and the even earlier invented Ni
- As a result of intensive studies to improve the corrosion resistance of Fe-Nb alloys, the composition was found to be 2% by weight or less of cobalt, 73 to 82% by weight of nickel in total with cobalt, and 1 to 10% in total of one or two of niobium and tantalum. 8% by weight, one or more of molybdenum, vanadium, chromium, tungsten, and copper in a total amount of 0.01 to 2% by weight, one or more of titanium, zirconium, and hafnium in a total amount of 0. .01 to 2%, further comprising one or more of silver, gold, ruthenium, rhodium, palladium, and platinum in a total amount of o, ooi to 2% by weight, and the remaining iron and a small amount of impurities. We have invented a magnetic thin film that maintains high magnetic permeability up to high frequencies, has good corrosion resistance, and can be manufactured with good reproducibility. (Patent application 1983-797
(See No. 41) However, both of these magnetic thin films are made of Ni.
Saturation magnetic flux density is 7.000~8.0O due to high content
The disadvantage was that it was low as OG.

本発明はこの問題を解消することを目的としている。The present invention aims to solve this problem.

(ニ)問題点を解決するための手段及び作用。(d) Means and actions for solving problems.

本発明は、従来の磁性薄膜の改良に関するもので、高周
波領域で高い透磁率を有し、さらに高い飽和磁束密度を
有する、新規な磁性r!I膜を提供することを目的とし
ている。
The present invention relates to improvements to conventional magnetic thin films, and includes a novel magnetic r! which has high permeability in the high frequency range and even higher saturation magnetic flux density. The purpose is to provide I membranes.

本発明者らは、先に発明したNi−Fe−Nb系合金薄
膜のMHz帯域に於ける高い透磁率は、Nb添加による
結晶粒の微細化および結晶粒の配向度の向上による局所
異方性の著しい低減に起因することを明らかにした。
The present inventors believe that the high magnetic permeability in the MHz band of the previously invented Ni-Fe-Nb alloy thin film is due to local anisotropy due to the refinement of crystal grains and improvement in the degree of crystal grain orientation due to the addition of Nb. It was revealed that this was due to a significant reduction in

結晶粒微細化、配向度の向上による局所異方性の低減は
磁歪(λ)の小さい組成域で大きな効果が期待されるの
で、本発明では飽和磁束密度が高く且つλの小さいNi
−Fe系の組成範囲について鋭意検討した。
Reduction of local anisotropy by grain refinement and improvement of orientation degree is expected to have a large effect in the composition range with small magnetostriction (λ). Therefore, in the present invention, Ni with high saturation magnetic flux density and small λ
The composition range of the -Fe system was intensively studied.

その結果、コバルト2重量%以下でニッケルとコバルト
の合計量が40〜55重量%のλの小さい範囲で、13
,000ガウス以上の飽和磁束密度と高い透磁率が得ら
れることを見出した。
As a result, in a small range of λ where cobalt is 2% by weight or less and the total amount of nickel and cobalt is 40 to 55% by weight, 13
It has been found that a saturation magnetic flux density of ,000 Gauss or more and high magnetic permeability can be obtained.

そして、先の発明と同様にNb添加によって、高い透磁
率が得られた薄膜には局所異方性の減少が認められた。
As in the previous invention, a decrease in local anisotropy was observed in the thin film that had high magnetic permeability due to Nb addition.

さらに、本発明者らは、モリブデン、バナジウム、クロ
ム、タングステン、及び銅の添加による磁気特性の向上
、磁気特性の再現性に及ぼすチタン、ジルコニウム及び
ハフニウムの効果、銀、金、ルテニウム、ロジウム、パ
ラジウム及び白金による耐食性改善効果など、先に発明
したNi−Fe−Nb系の場合と同じ効果のあることを
見出した。
In addition, the present inventors have demonstrated the improvement of magnetic properties by the addition of molybdenum, vanadium, chromium, tungsten, and copper, the effect of titanium, zirconium, and hafnium on the reproducibility of magnetic properties, and the effects of silver, gold, ruthenium, rhodium, palladium, It was also found that the same effects as the previously invented Ni-Fe-Nb system were found, such as the corrosion resistance improvement effect of platinum.

即ち、本発明は、組成が、重量比でコバルト2%以下、
ニッケルがコバルトとの合計量で40〜55%、ニオブ
及びタンタルの一種以上が総量で0.5〜5.5%、残
余が実質的に鉄と不可避的不純物成分の組成よりなるこ
とを特徴とする高周波磁気特性に優れる磁性薄膜にあり
、また本発明は、組成が重量比でコバルト2%以下、ニ
ッケルがコバルトとの合計量で40〜55%、ニオブ及
びタンタルの一種以上が総量で0.5〜5.5%、モリ
ブデン、バナジウム、クロム、タングステン及び銅のい
ずれか一種又は二種以上が総量で0.1〜2%、チタン
、ジルコニウム及びハフニウムのいずれか一種又は二種
以上を総量で0.001〜0.5%、残余が実質的に鉄
と不可避的不純物成分の組成よりなることを特徴とする
高周波磁気特性に優れる磁性薄膜にあり、さらに、本発
明は、組成が重量比でコバルト2%以下、ニッケルがコ
バルトとの合計量で40〜55%、ニオブ及びタンタル
の一種以上が総量で0.5〜5.5%、銀、金、ルテニ
ウム、ロジウム、パラジウム及び白金のいずれか一種又
は二種類以上を総量でo、oot〜2%、残余が実質的
に鉄と不可避的不純物成分の組成よりなることを特徴と
する高周波磁気特性に優れる磁性薄膜にあり、更に加え
て、本発明は、組成が、重量比で、コバルト2%以下、
ニッケルがコバルトとの合計量で40〜55%、ニオブ
及びタンタルの一種以上が総量で0.5〜5.5%、モ
リブデン、バナジウム、クロム、タングステン及び銅の
いずれか一種又は二種以上が総量で011〜2%、チタ
ン、ジルコニウム及びハフニウムのいずれか一種又は二
種以上を総量で0.001〜0.5%、銀、金、ルテニ
ウム、ロジウム、パラジウム及び白金のいずれか−種又
は二種類以上を総量で0.001〜2%、残余が実質的
に鉄と不可避的不純物成分の組成よりなることを特徴と
する高周波磁気特性に優れる磁性薄膜にある。
That is, in the present invention, the composition is 2% or less of cobalt by weight,
Nickel is characterized by a total content of 40 to 55% with cobalt, niobium and one or more of tantalum in a total content of 0.5 to 5.5%, and the remainder substantially consisting of iron and inevitable impurity components. The present invention is directed to a magnetic thin film having excellent high-frequency magnetic properties.The present invention also provides a magnetic thin film having a weight ratio of 2% or less of cobalt, 40 to 55% of nickel in total with cobalt, and 0.5% in total of one or more of niobium and tantalum. 5 to 5.5%, one or more of molybdenum, vanadium, chromium, tungsten, and copper in a total amount of 0.1 to 2%, and one or more of titanium, zirconium, and hafnium in a total amount of 0.001 to 0.5%, with the remainder consisting essentially of iron and unavoidable impurity components. 2% or less of cobalt, 40 to 55% of nickel in total with cobalt, 0.5 to 5.5% in total of one or more of niobium and tantalum, any of silver, gold, ruthenium, rhodium, palladium, and platinum A magnetic thin film with excellent high-frequency magnetic properties characterized by containing one or more types in a total amount of o, oot ~ 2%, with the remainder consisting essentially of iron and unavoidable impurity components. In the invention, the composition is 2% or less of cobalt by weight,
The total amount of nickel and cobalt is 40 to 55%, the total amount of one or more of niobium and tantalum is 0.5 to 5.5%, and the total amount of one or more of molybdenum, vanadium, chromium, tungsten, and copper is included. 0.011 to 2% in total, one or more of titanium, zirconium, and hafnium in a total amount of 0.001 to 0.5%, and one or two of silver, gold, ruthenium, rhodium, palladium, and platinum. A magnetic thin film having excellent high-frequency magnetic properties is characterized in that the total amount of the above components is 0.001 to 2%, and the remainder is substantially composed of iron and unavoidable impurity components.

本発明の磁性薄膜において、コバルト(CO)は2重量
%以下含有される。ニッケル(Ni)は該ニッケルと前
記2重量%以下のコバルトとの合計が40〜55重量%
の範囲で磁歪が小さくなるように含有される。
In the magnetic thin film of the present invention, cobalt (CO) is contained in an amount of 2% by weight or less. Nickel (Ni) has a total of 40 to 55% by weight of the nickel and 2% by weight or less of cobalt.
It is contained so that the magnetostriction is small within the range of .

この範囲外では、得られる磁性薄膜の透磁率、飽和磁束
密度が範囲内のものに比して共に低下する。また、本発
明において、コバルトの含有量が2重量%以下であれば
、透磁率に大きな影響を及ぼさずに飽和磁束密度及びキ
ュリー温度の上昇に寄与するので好ましい。
Outside this range, the magnetic permeability and saturation magnetic flux density of the obtained magnetic thin film are both lower than those within this range. Further, in the present invention, it is preferable that the content of cobalt is 2% by weight or less, since this contributes to an increase in the saturation magnetic flux density and Curie temperature without significantly affecting the magnetic permeability.

ニオブ及びタンタルは非常に性質の近い元素であり、本
発明の場合にも局所異方性を低減する同じ作用を有して
いる。したがって、本発明においては、ニオブ及びタン
タルはニオブ及びタンタルのいずれか一種を使用するこ
とができ、しかし、その双方を組み合わせて一緒に使用
することもできる0本発明の磁性薄膜におけるニオブ及
び/又はタンタルの含有量については、その増加に伴っ
て磁性薄膜の高周波領域における透磁率は高くなるが、
5.5重量%以上では飽和磁束密度が低下するとともに
透磁率を著るしく低下させるので、上限を5.5重量%
とするのが好ましく、また0、5重量%以下ではそれら
の効果が少ないので、下限を0.5重量%とするのが好
ましい。
Niobium and tantalum are elements with very similar properties, and in the case of the present invention, they have the same effect of reducing local anisotropy. Therefore, in the present invention, any one of niobium and tantalum can be used as niobium and tantalum, but they can also be used in combination. Regarding tantalum content, as the content increases, the magnetic permeability of the magnetic thin film in the high frequency region increases;
If it exceeds 5.5% by weight, the saturation magnetic flux density will decrease and the magnetic permeability will decrease significantly, so the upper limit should be set at 5.5% by weight.
It is preferable that the amount is 0.5% by weight or less, and since these effects are small if the amount is less than 0.5% by weight, it is preferable to set the lower limit to 0.5% by weight.

モリブデン(No) 、バナジウム(V)、クロム(C
r) 、タングステン(旧及び!771(Cu)につい
ての添加は、これら単独での効果はないが、Nb又はT
aと同時に或はNb及びTaと同時に添加した場合には
、Nb又はTaの単独の効果並びにNb及びTaの共存
時の効果をさらに増加する作用があり、また薄膜の耐食
性を向上させる効果がある。しかし、多量に添加すると
飽和磁束密度を低下させるので、モリブデン(No)、
バナジウム(■〉、クロム(Cr)、タングステン(旧
及び銅(Cu)を含有させる場合、これらの元素の中の
一種類の元素を含有させるときは、当該元素の量は、共
に、2重量%以下とさせるのが好ましい。しかし、これ
ら元素を組み合わせて含有させるときにおいても、それ
らの元素の合計含有量の上限は2重量%とするのが好ま
しい。またこれら元素について、いずれの場合でも、そ
の含有量が0.1重量%以下では効果が期待できないの
で、その含有量の下限は0.1重量%とするのが好まし
い。
Molybdenum (No), vanadium (V), chromium (C
r), tungsten (old and !771 (Cu)) has no effect on their own, but Nb or T
When added at the same time as a or at the same time as Nb and Ta, it has the effect of further increasing the effect of Nb or Ta alone and the effect of Nb and Ta coexisting, and also has the effect of improving the corrosion resistance of the thin film. . However, if added in large amounts, the saturation magnetic flux density will decrease, so molybdenum (No),
When vanadium (■>), chromium (Cr), tungsten (old) and copper (Cu) are contained, when one type of element among these elements is contained, the amount of each of the elements is 2% by weight. It is preferable that the content is as follows.However, even when these elements are contained in combination, it is preferable that the upper limit of the total content of these elements is 2% by weight.Also, in any case, for these elements, Since no effect can be expected if the content is less than 0.1% by weight, the lower limit of the content is preferably 0.1% by weight.

チタン(Ti)、ジルコニウム(Zr)及びハフニウム
(Hf)はターゲットの結晶粒微細化、ガス含有量の低
減に効果があるので、これ等元素を含有するターゲット
を用いると、磁気特性の優れた磁性IJIIを安定して
得ることができ好ましい。このような効果は各元素を単
独或いは二種類以上を、総量で0.001%以上含有さ
せることにより現われるが、0.5%以上になると、飽
和磁束密度を低下させるので、その含有量の範囲は、0
.001〜0.5重量%とするのが好ましい。
Titanium (Ti), zirconium (Zr), and hafnium (Hf) are effective in refining the target's crystal grains and reducing the gas content, so using a target containing these elements will result in excellent magnetic properties. It is preferable because IJII can be stably obtained. Such an effect appears when each element is contained alone or in combination of two or more in a total amount of 0.001% or more, but if it exceeds 0.5%, the saturation magnetic flux density decreases, so the content range is 0
.. The amount is preferably 0.001 to 0.5% by weight.

また、イツトリウム(Y)、ランタン(La)、セリウ
ム(Ce )等の希土類元素は、Ti、 Zr、 Hf
と同じ作用を有しているので、各元素単独又は二種類以
上の元素の総含有量が、0.5重量%以下であれば使用
することができる。銀(^g> 、金(^u〉、ルテニ
ウム(Ru)、ロジウム(Rh) 、パラジウム(Pd
)及び白金(pt)は、含有量が増加するほど耐食性向
上と共に透磁率も向上する。
In addition, rare earth elements such as yttrium (Y), lanthanum (La), and cerium (Ce) include Ti, Zr, and Hf.
Therefore, it can be used as long as the total content of each element alone or two or more elements is 0.5% by weight or less. Silver (^g>, gold (^u>), ruthenium (Ru), rhodium (Rh), palladium (Pd)
) and platinum (pt), the higher the content, the higher the corrosion resistance and magnetic permeability.

方飽和磁束を余り低下させないので多量に含有させるこ
とができるが、経済性の点から、銀(^g)、金(^u
)、ルテニウム(Ru)、ロジウム(Rh)、パラジウ
ム(Pd)及び白金(Pt)を含有させる場合、これら
元素の中の一種類の元素又は二種類以上の元素を含有さ
せるときは、当該元素の総含有量は、2重量%以下が好
ましく、また0、001重量%以下では効果が期待でき
ないので、その含有量の範囲は、o、oot%〜2重量
%とするのが好ましい。
However, from the economic point of view, silver (^g) and gold (^u
), ruthenium (Ru), rhodium (Rh), palladium (Pd), and platinum (Pt), and when containing one or more of these elements, the The total content is preferably 2% by weight or less, and since no effect can be expected if it is less than 0,001% by weight, the content is preferably in the range of 0,000% to 2% by weight.

以上のように、本発明の磁性薄膜は、組成が、コバルト
2重量%以下、ニッケルがコバルトとの合計量で40〜
55重量%、ニオブ及びタンタルの何れか一種類又は二
種類が総量で0.5〜5.5重量%、残余の鉄並びに少
量の不純物とからなる磁性薄膜、この組成に、さらに、
モリブデン、バナジウム、クロム、タングステン、銅、
の何れか一種類又は二種類以上が総量で0.1〜2重量
%、チタン、ジルコニウム及びハフニウムのいずれか一
種又は二種以上を総量で0.001〜0.5%含有させ
た磁性薄膜、また、以上の磁性薄膜の組成に、さらに、
銀、金、ルテニウム、ロジウム、パラジウム及び白金の
何れか一種類又は二種類以上を総量で0.001〜2重
量%含有させた磁性薄膜であるが、マンガン(Mn)、
ケイ素(Si) 、アルミニウム(^l)、カルシウム
(Ca )及びマグネシウム(Hg)等の脱酸剤につい
て単独で使用する場合は、0.5重量%以下の量で使用
でき、二種類以上の元素を組み合わせて一緒に使用する
場合は、合計量で1%以下であれば使用することができ
る。
As described above, the magnetic thin film of the present invention has a composition of 2% by weight or less of cobalt and 40 to 40% of nickel in total with cobalt.
A magnetic thin film consisting of 55% by weight, one or both of niobium and tantalum in a total amount of 0.5 to 5.5% by weight, the remainder iron and a small amount of impurities;
molybdenum, vanadium, chromium, tungsten, copper,
A magnetic thin film containing a total amount of 0.1 to 2% by weight of one or more of titanium, zirconium, and hafnium, and a total of 0.001 to 0.5% of one or more of titanium, zirconium, and hafnium; Furthermore, in addition to the above composition of the magnetic thin film,
It is a magnetic thin film containing one or more of silver, gold, ruthenium, rhodium, palladium, and platinum in a total amount of 0.001 to 2% by weight, but manganese (Mn),
When using deoxidizers such as silicon (Si), aluminum (^l), calcium (Ca), and magnesium (Hg) alone, they can be used in an amount of 0.5% by weight or less, and two or more types of elements When used in combination, they can be used if the total amount is 1% or less.

本発明における磁性薄膜は、真空蒸着法、スパッタ蒸着
法及びイオンブレーティング法等の薄膜堆積法により形
成することができる。しかし、アルゴン雰囲気でのスパ
ッタ蒸着法、即ちスパッタリング法により、適当な絶縁
材料上に成膜させることにより作製されるのが、操作が
簡単であるので好ましい。この場合、スパッタリングを
3〜25mTorr (3X 10−コル25X 10
−’Torr )の範囲に維持されたアルゴン圧力下で
行うと、磁気特性が優れた薄膜が得られるので好ましい
The magnetic thin film in the present invention can be formed by a thin film deposition method such as a vacuum evaporation method, a sputter evaporation method, or an ion blating method. However, it is preferable to fabricate the film by forming a film on a suitable insulating material by a sputter deposition method in an argon atmosphere, that is, a sputtering method, because the operation is simple. In this case, the sputtering is controlled at 3 to 25 mTorr (3X 10-Col 25X 10
It is preferable to carry out the process under an argon pressure maintained in the range of -'Torr) because a thin film with excellent magnetic properties can be obtained.

本発明において、適当な絶縁物上に成膜された薄膜は5
μ−以下の厚さのものであり、単一層または絶縁物を介
して多量に71層されたものとすることができる。
In the present invention, the thin film formed on a suitable insulator is
It has a thickness of μ- or less, and can be a single layer or a large number of 71 layers with an insulator interposed therebetween.

本発明の磁性薄膜は、8 mmVTR、DAT 、tl
DD等の薄膜ヘッド等の種々の用途に使用することがで
き、また、特に、前記Ni−Fe合金薄膜に替えて種々
の用途に使用することもできる。例えば旧Gヘッドの中
間層として、フェライト上に本発明の磁性薄膜を形成す
ることによって、優れたHIGヘッドを製造することが
でき、また、例えば、HRヘッドのヨークとして、或は
、例えば、Co−Cr等の垂直磁気記録媒体の下地とし
て、種々の用途に有利に使用することができる。
The magnetic thin film of the present invention can be used for 8 mm VTR, DAT, tl
It can be used for various purposes such as thin film heads of DDs and the like, and in particular, it can also be used for various purposes in place of the Ni--Fe alloy thin film. For example, an excellent HIG head can be manufactured by forming the magnetic thin film of the present invention on ferrite, as an intermediate layer of a conventional G head, or as a yoke of an HR head, or as an intermediate layer of a Co - It can be advantageously used in various applications as a base for perpendicular magnetic recording media such as Cr.

(ホ)実施例 以下、本発明の実施態様の例について説明するが、本発
明は、これら説明及び例示により何ら制限を受けるもの
ではない。
(e) Examples Examples of embodiments of the present invention will be described below, but the present invention is not limited in any way by these explanations and exemplifications.

以下、実施例の−について詳細に説明する。電解ニッケ
ル(Ni)、電解鉄(Fe)、金属ニオブ(Nb)及び
タンタル(Ta)並びに金属モリブデン(No)を原料
として用い、所定量配合し真空中で3 Kg溶解後、直
径601の金型に鋳込んだ、この鋳塊を熱間鍛造した後
機械加工により厚さ3I及び直径70 lのターゲット
を作製した。
Hereinafter, - in the example will be explained in detail. Using electrolytic nickel (Ni), electrolytic iron (Fe), metallic niobium (Nb), tantalum (Ta), and metallic molybdenum (No) as raw materials, predetermined amounts were mixed, 3 kg was melted in a vacuum, and a mold with a diameter of 60 mm was formed. This ingot was hot forged and then machined to produce a target with a thickness of 3I and a diameter of 70L.

このターゲットを用い、3〜60 nTorrの圧力範
囲内のアルゴン雰囲気でDCマグネトロンスパッタリン
グ法、及びRFスパッタリング法によりガラス基板上に
3,000〜6,000 A 厚の薄膜を作成した。
Using this target, a thin film with a thickness of 3,000 to 6,000 A was formed on a glass substrate by DC magnetron sputtering and RF sputtering in an argon atmosphere within a pressure range of 3 to 60 nTorr.

これ等の薄膜について、成膜の侭、200〜500℃の
範囲の温度で熱処理した。この熱処理した後の薄膜につ
いての磁気特性値を表−1に示した。
These thin films were heat-treated at a temperature in the range of 200 to 500° C. during film formation. Table 1 shows the magnetic property values of the thin film after this heat treatment.

この薄膜の磁気特性は、ターゲット組成、スパッタ条件
、熱処理条件によって著るしく影響を受けるが、表−1
の値はそれぞれの組成について得られた最良の特性値で
ある。
The magnetic properties of this thin film are significantly affected by target composition, sputtering conditions, and heat treatment conditions, but Table 1
The values are the best characteristic values obtained for each composition.

表−1に示されるように本発明合金はいずれも飽和磁束
密度(Bs)は13 KG以上と高く、しかも比較合金
に比べ実効透磁率(μeff)が改善されている。
As shown in Table 1, all of the alloys of the present invention have a high saturation magnetic flux density (Bs) of 13 KG or more, and have improved effective magnetic permeability (μeff) compared to the comparative alloys.

(以下余白) 表−1 さらに、本発明に係る磁性薄膜は結晶質であるので熱安
定性に優れており、薄膜ヘッドの製造時に於ける加熱工
程で特製が劣化することはない。
(The following is a blank space) Table 1 Furthermore, since the magnetic thin film according to the present invention is crystalline, it has excellent thermal stability, and the special product does not deteriorate during the heating process during the manufacturing of the thin film head.

(へン発明の効果 本発明に係る磁性薄膜は、高飽和磁束密度と優れた高周
波特性を有し、しかも熱安定性と耐食性にも優れている
(Effects of the invention) The magnetic thin film according to the invention has a high saturation magnetic flux density and excellent high frequency characteristics, and also has excellent thermal stability and corrosion resistance.

したがって、例えば、8 m/mVTR,DAT及びI
(DDなとの高密度記録再生用の薄膜ヘッド用として、
また、例えば、HTGヘッド、MRヘッド等の磁気ヘッ
ド用として、或は、垂直磁気記録媒体の下地用として、
またスイッチング電源用等の高周波領域で使用される電
子機器の磁心として、また電源用として今後盤々必要と
なってくる超高周波領域で使用される磁性材料として非
常に有用であり、なかでも、高磁束密度が要求される場
合には非常に有用である。
Thus, for example, 8 m/m VTR, DAT and I
(For thin film heads for high-density recording and playback such as DD,
Also, for example, for use in magnetic heads such as HTG heads and MR heads, or as bases for perpendicular magnetic recording media.
It is also very useful as a magnetic core for electronic equipment used in high frequency ranges such as switching power supplies, and as a magnetic material used in ultra high frequency ranges that will be increasingly needed for power supplies in the future. Very useful when magnetic flux density is required.

Claims (4)

【特許請求の範囲】[Claims] (1) 組成が重量比でコバルト2%以下、ニッケルが
コバルトとの合計量で40〜55%、ニオブ及びタンタ
ルの一種以上が総量で0.5〜5.5%、残余が実質的
に鉄と不可避的不純物成分の組成よりなることを特徴と
する高周波磁気特性に優れる磁性薄膜。
(1) The composition is 2% or less cobalt by weight, 40 to 55% nickel in total with cobalt, 0.5 to 5.5% in total of one or more of niobium and tantalum, and the balance is substantially iron. A magnetic thin film with excellent high-frequency magnetic properties, characterized by a composition consisting of and unavoidable impurity components.
(2) 組成が重量比でコバルト2%以下、ニッケルが
コバルトとの合計量で40〜55%、ニオブ及びタンタ
ルの一種以上が総量で0.5〜5.5%、モリブデン、
バナジウム、クロム、タングステン及び銅のいずれか一
種又は二種以上が総量で0.1〜2%、チタン、ジルコ
ニウム及びハフニウムのいずれか一種又は二種以上を総
量で0.001〜0.5%、残余が実質的に鉄と不可避
的不純物成分の組成よりなることを特徴とする高周波磁
気特性に優れる磁性薄膜。
(2) The composition is 2% or less cobalt by weight, 40 to 55% nickel in total with cobalt, 0.5 to 5.5% in total of one or more of niobium and tantalum, molybdenum,
0.1 to 2% in total of one or more of vanadium, chromium, tungsten, and copper; 0.001 to 0.5% of one or more of titanium, zirconium, and hafnium; A magnetic thin film with excellent high frequency magnetic properties characterized in that the remainder consists essentially of iron and unavoidable impurity components.
(3) 組成が重量比でコバルト2%以下、ニッケルが
コバルトとの合計量で40〜55%、ニオブ及びタンタ
ルの一種以上が総量で0.5〜5.5%、銀、金、ルテ
ニウム、ロジウム、パラジウム及び白金のいずれか一種
又は二種類以上を総量で0.001〜2%、残余が実質
的に鉄と不可避的不純物成分の組成よりなることを特徴
とする高周波磁気特性に優れる磁性薄膜。
(3) The composition is 2% or less of cobalt by weight, 40 to 55% of nickel in total with cobalt, 0.5 to 5.5% in total of one or more of niobium and tantalum, silver, gold, ruthenium, A magnetic thin film with excellent high-frequency magnetic properties characterized by containing one or more of rhodium, palladium, and platinum in a total amount of 0.001 to 2%, with the remainder consisting essentially of iron and unavoidable impurity components. .
(4) 組成が、重量比で、コバルト2%以下、ニッケ
ルがコバルトとの合計量で40〜55%、ニオブ及びタ
ンタルの一種以上が総量で0.5〜5.5%、モリブデ
ン、バナジウム、クロム、タングステン及び銅のいずれ
か一種又は二種以上が総量で0.1〜2%、チタン、ジ
ルコニウム及びハフニウムのいずれか一種又は二種以上
を総量で0.001〜0.5%、銀、金、ルテニウム、
ロジウム、パラジウム及び白金のいずれか一種又は二種
類以上を総量で0.001〜2%、残余が実質的に鉄と
不可避的不純物成分の組成よりなることを特徴とする高
周波磁気特性に優れる磁性薄膜。
(4) The composition is, by weight, 2% or less of cobalt, 40 to 55% of nickel in total with cobalt, 0.5 to 5.5% in total of one or more of niobium and tantalum, molybdenum, vanadium, One or more of chromium, tungsten and copper in a total amount of 0.1 to 2%, one or more of titanium, zirconium and hafnium in a total amount of 0.001 to 0.5%, silver, gold, ruthenium,
A magnetic thin film with excellent high-frequency magnetic properties characterized by containing one or more of rhodium, palladium, and platinum in a total amount of 0.001 to 2%, with the remainder consisting essentially of iron and unavoidable impurity components. .
JP20245189A 1989-08-04 1989-08-04 Thin magnetic film Pending JPH0368744A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20245189A JPH0368744A (en) 1989-08-04 1989-08-04 Thin magnetic film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20245189A JPH0368744A (en) 1989-08-04 1989-08-04 Thin magnetic film

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JPH0368744A true JPH0368744A (en) 1991-03-25

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US8032960B2 (en) 2006-09-14 2011-10-11 Martin B Rawls-Meehan Methods and systems of an adjustable bed
US9295338B2 (en) 2006-09-14 2016-03-29 Martin B. Rawls-Meehan Adjustable bed position control
US9730525B2 (en) 2006-09-14 2017-08-15 Martin B. Rawls-Meehan Adjustable bed position control
US9737155B2 (en) 2007-09-14 2017-08-22 Martin B. Rawls-Meehan System for tandem bed communication
US10064784B2 (en) 2006-09-14 2018-09-04 Martin B. Rawls-Meehan System and method of an adjustable bed with a vibration motor
US10864137B2 (en) 2006-09-14 2020-12-15 Ascion, Llc System and method of an adjustable bed with a vibration motor

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US9717344B2 (en) 2006-08-29 2017-08-01 Martin B. Rawls-Meehan Methods and systems of an adjustable bed
US9149126B2 (en) 2006-08-29 2015-10-06 Martin B Rawls-Meehan Methods and systems of an adjustable bed
US9161633B2 (en) 2006-08-29 2015-10-20 Martin B. Rawls-Meehan System of memory positions for an adjustable bed
US9737150B2 (en) 2006-08-29 2017-08-22 Martin B. Rawls-Meehan Adjustable bed with an actuator safety slot
US9700149B2 (en) 2006-08-29 2017-07-11 Martin B. Rawls-Meehan Methods and systems of an adjustable bed
US9730525B2 (en) 2006-09-14 2017-08-15 Martin B. Rawls-Meehan Adjustable bed position control
US8032960B2 (en) 2006-09-14 2011-10-11 Martin B Rawls-Meehan Methods and systems of an adjustable bed
US9295338B2 (en) 2006-09-14 2016-03-29 Martin B. Rawls-Meehan Adjustable bed position control
US9867478B2 (en) 2006-09-14 2018-01-16 Martin B. Rawls-Meehan Closed feedback loop to verify a position of an adjustable bed
US10064784B2 (en) 2006-09-14 2018-09-04 Martin B. Rawls-Meehan System and method of an adjustable bed with a vibration motor
US10864137B2 (en) 2006-09-14 2020-12-15 Ascion, Llc System and method of an adjustable bed with a vibration motor
US10935941B2 (en) 2006-09-14 2021-03-02 Martin B. Rawls-Meehan Method of a touch screen remote control with feedback for an adjustable bed
US9737155B2 (en) 2007-09-14 2017-08-22 Martin B. Rawls-Meehan System for tandem bed communication

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