JPH0362956A - Semiconductor chip carrier - Google Patents
Semiconductor chip carrierInfo
- Publication number
- JPH0362956A JPH0362956A JP1198833A JP19883389A JPH0362956A JP H0362956 A JPH0362956 A JP H0362956A JP 1198833 A JP1198833 A JP 1198833A JP 19883389 A JP19883389 A JP 19883389A JP H0362956 A JPH0362956 A JP H0362956A
- Authority
- JP
- Japan
- Prior art keywords
- metal plate
- semiconductor chip
- heat
- recess
- adhesive layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 36
- 229910052751 metal Inorganic materials 0.000 claims abstract description 66
- 239000002184 metal Substances 0.000 claims abstract description 66
- 239000012790 adhesive layer Substances 0.000 claims description 33
- 239000010410 layer Substances 0.000 claims description 23
- 239000004020 conductor Substances 0.000 claims description 16
- 230000017525 heat dissipation Effects 0.000 claims description 11
- 230000002093 peripheral effect Effects 0.000 claims description 7
- 230000005855 radiation Effects 0.000 abstract description 6
- 230000010354 integration Effects 0.000 abstract description 5
- 239000011347 resin Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000003822 epoxy resin Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- 229910001369 Brass Inorganic materials 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000010951 brass Substances 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000010297 mechanical methods and process Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 229920006337 unsaturated polyester resin Polymers 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、半導体チップ搭載に用いられる半導体チン
プキャリア関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor chip carrier used for mounting semiconductor chips.
［従来の技術］
半導体チップキャリアを構成する樹脂絶縁層はガラス布
を基材としたエポキシ樹脂積層板などのプリント配線板
が用いられ、このようなプリント配線板は熱の伝導性が
悪くて放熱を良好になすことができない。先に本発明者
らは、特開昭６２−０５２９９２において第３図に示す
如くプリント配線板から構成された半導体チップキャリ
アの放熱性を良好にするためにプリント配線板の絶縁Ｎ
１に挿入された金属板２の動きを阻止しさらに、絶縁層
ｌ・と金属板２に生ずる隙間を密閉して耐湿性を高めた
半導体チップキャリアを提供した。ところが、半導体チ
ップの高速化、高集積化、高機能化による半導体チップ
の発熱量の増大にともなって熱放散性の優れた半導体チ
ップキャリアの造出かますます大きく期待される中で、
外部放熱体を前記半導体チップキャリアに取り付けるの
に、金属板２が絶縁Ｎｔの表面より窪んでいるために外
部放熱体の形状に制限が加わり取り付は部が放熱用の第
２の四部１２より小さな外部放熱体に制限され、放熱量
の増大をはかる外部放熱体の形状の自由度が小さなもの
であった。[Prior art] Printed wiring boards such as epoxy resin laminates based on glass cloth are used for the resin insulating layer that constitutes semiconductor chip carriers, and such printed wiring boards have poor heat conductivity and are difficult to dissipate. cannot be made in good condition. Previously, in JP-A No. 62-052992, the inventors of the present invention have developed the insulation N of a printed wiring board in order to improve the heat dissipation of a semiconductor chip carrier composed of a printed wiring board as shown in FIG.
To provide a semiconductor chip carrier which prevents the movement of the metal plate 2 inserted into the metal plate 1 and further seals the gap formed between the insulating layer l and the metal plate 2, thereby increasing moisture resistance. However, as the amount of heat generated by semiconductor chips increases due to faster speeds, higher integration, and higher functionality, there are increasing expectations for the creation of semiconductor chip carriers with excellent heat dissipation.
When attaching the external heat radiator to the semiconductor chip carrier, since the metal plate 2 is recessed from the surface of the insulating Nt, the shape of the external heat radiator is limited, and the mounting part is closer to the second four parts 12 for heat radiation. The external heat sink is limited to a small size, and the degree of freedom in the shape of the external heat sink to increase the amount of heat dissipation is small.
〔発明が解決しようとする課題］
熱放散性をさらに一層高めるための外部放熱体の形状に
加わった制限を解除するとともに、外部放熱体を簡単に
取り付けできる構造の半導体チップキャリアを提供する
ことにある。[Problems to be Solved by the Invention] To provide a semiconductor chip carrier having a structure that eliminates restrictions placed on the shape of an external heat sink to further enhance heat dissipation performance, and allows the external heat sink to be easily attached. be.
本発明は前記課題を解決するために、絶縁層の貫通穴に
埋入された第１の金属板、この金属板と絶縁層の一方の
表面に絶縁接着層を介して配設された導体回路及び、絶
縁接着層に形成された半導体チップ搭載用の第１の凹部
を備え、他方の表面に配設された絶縁接着層、この絶縁
接着層に放熱用の第２の凹部を設けて前記第１の金属板
の周縁部を被覆する鍔を備え、それぞれの凹部の底面に
露出する前記第１の金属板の第２の凹部の表面に接、、
？７層を介して第２の金属板が前記第２の四部から突出
して配設されてなることを特徴とする半導体チップキャ
リアを提供するものである。In order to solve the above problems, the present invention includes a first metal plate embedded in a through hole of an insulating layer, and a conductor circuit disposed on one surface of the metal plate and the insulating layer via an insulating adhesive layer. and a first recess formed in the insulating adhesive layer for mounting the semiconductor chip, an insulating adhesive layer disposed on the other surface, and a second recess for heat dissipation provided in the insulating adhesive layer. a flange that covers the peripheral edge of the first metal plate, and is in contact with the surface of the second recess of the first metal plate exposed at the bottom of each recess;
? The present invention provides a semiconductor chip carrier characterized in that a second metal plate is disposed to protrude from the second four parts through seven layers.
〔実施例］
以下に、本発明を図面に基づいて詳しく説明する。第１
図ａは本発明の一実施例に係る斜視図。[Example] The present invention will be explained in detail below based on the drawings. 1st
Figure a is a perspective view of one embodiment of the present invention.
第１図すは外部放熱体を取り付けた第１図ａのＸＹ断面
図である。第１図ａ、ｂの半導体チップキャリアは絶縁
層１及び絶縁層１の貫通穴３に埋入された第１の金属板
２．この絶縁層ｌと第１の金属板２の一方の表面に絶縁
接着層５を介して配設された導体回路４及び、前記第１
の金属板２とこの絶縁接着層５に形成された半導体チッ
プ１゜搭載用の第１の凹部１１とを備えている。そして
、他方の表面にも絶縁接着層５が配設され、この絶縁接
着層５に放熱用の第２の凹部１２を設けて前記第１の金
属板２の周縁部を被覆する鍔６が形成されている。前記
放熱用の第２の凹部１２が設けられた絶縁接着層５の表
面には導体１３が設けられている。この放熱用の第２の
凹部の底面に露出する第１の金属板２と絶縁接着層５の
表面に配設した導体１３とを金属Ｎ１４で接続し一体化
したものでは、熱伝導路の確保と放熱面の拡大の点で放
熱には一層有利である。なお、第１１第２の凹部１１，
１２としての形状は周知の如く四角柱状が一般的である
が特に制限する趣旨ではなく円柱などでもよい。上記構
成の半導体チップキャリアにおいて、第１の凹部１１の
第１の金属板２に半導体チップ１０を搭載すると半導体
チップ１゜から発生する熱は、第１の金属板２に吸収さ
れさらに、熱伝導性に優れた第１の金属板２の反対側に
おいて、第２の凹部１２の底面に接着層７を介して第２
の凹部１２から突出して配設された第２の金属板８を通
過し、第２の金属板８に取り付けられた第２の金属板８
の外表面より大きな取り付は面と側面にフィン１７を有
する外部放熱体９へと移動し、熱が第１の金属板２内に
こもることなく空気中に放熱されることになって半導体
チップｌＯの高集積化、高機能化、高速化に対応可能と
なる。なお、第２の金属板８を放熱用の第２の凹部１２
に接着Ｎ７を介して配設するときに、絶縁層１と絶縁接
着層５の厚さによって第２の凹部１２の深さにばらつき
が生しても、断面が台形を有し、両側に勾配が相反する
傾斜辺を有する台形の傾斜辺が前記鍔６の内周端に当接
する第２の金属板８を用いると、常に第２の金属板８は
第２の凹部１２の周縁部に隙間を生じることなく第２の
凹部１２から突出して配設することができ好ましい、第
２の金属板８の形状は四角錐台に限定されるものではな
く、第２の凹部Ｉ２が円の場合は円錐台などと任意に適
したものを選ぶことができる。FIG. 1 is an XY sectional view of FIG. 1a with an external heat sink attached. The semiconductor chip carrier of FIGS. 1a and 1b includes an insulating layer 1 and a first metal plate 2 embedded in a through hole 3 of the insulating layer 1. A conductor circuit 4 disposed on one surface of the insulating layer l and the first metal plate 2 with an insulating adhesive layer 5 interposed therebetween;
2 and a first recess 11 formed in the insulating adhesive layer 5 for mounting a semiconductor chip 1°. An insulating adhesive layer 5 is also provided on the other surface, and a second recess 12 for heat dissipation is provided in this insulating adhesive layer 5 to form a flange 6 that covers the peripheral edge of the first metal plate 2. has been done. A conductor 13 is provided on the surface of the insulating adhesive layer 5 where the second recess 12 for heat radiation is provided. The first metal plate 2 exposed at the bottom of the second recess for heat dissipation and the conductor 13 disposed on the surface of the insulating adhesive layer 5 are connected with metal N14 to ensure a heat conduction path. This is more advantageous for heat dissipation in terms of expanding the heat dissipation surface. Note that the eleventh second recess 11,
As is well known, the shape of 12 is generally a quadrangular prism, but it is not particularly limited and may be a cylinder or the like. In the semiconductor chip carrier having the above configuration, when the semiconductor chip 10 is mounted on the first metal plate 2 of the first recess 11, the heat generated from the semiconductor chip 1° is absorbed by the first metal plate 2, and the heat is further transferred to the first metal plate 2. On the opposite side of the first metal plate 2, which has excellent properties, a second
The second metal plate 8 is attached to the second metal plate 8 by passing through the second metal plate 8 disposed so as to protrude from the recess 12 of the second metal plate 8.
The mounting area larger than the outer surface of the semiconductor chip is moved to the external heat radiator 9 having fins 17 on the surface and side surfaces, and the heat is radiated into the air without being trapped within the first metal plate 2. It becomes possible to respond to higher integration, higher functionality, and higher speed of IO. Note that the second metal plate 8 is provided with a second recess 12 for heat radiation.
Even if the depth of the second recess 12 varies depending on the thickness of the insulating layer 1 and the insulating adhesive layer 5 when the second recess 12 is disposed through the adhesive N7, the cross section has a trapezoidal shape and slopes are formed on both sides. When using the second metal plate 8 in which the slope side of the trapezoid having opposite slope sides contacts the inner peripheral end of the collar 6, the second metal plate 8 always leaves a gap at the peripheral edge of the second recess 12. The shape of the second metal plate 8, which is preferable because it can be disposed so as to protrude from the second recess 12 without causing a problem, is not limited to a truncated square pyramid. You can choose anything suitable, such as a truncated cone.
このように絶縁接着層５と第２の金属板８の埋め込み部
分の間に隙間が生じないので水分や湿気の浸透経路を作
らない。そのため半導体チップキャリアの耐湿性を向上
させることができ、半導体チップの耐湿信頼性を向上さ
せる効果をもたらす。In this way, since no gap is created between the insulating adhesive layer 5 and the buried portion of the second metal plate 8, no penetration path for water or humidity is created. Therefore, the moisture resistance of the semiconductor chip carrier can be improved, resulting in the effect of improving the moisture resistance reliability of the semiconductor chip.
外部放熱体９の第２の金属板８への取り付けは、熱伝導
性に優れた接着剤、半田および、あらかじめ双方にねし
止め加工を施た機械的な方法などを用いることができる
。また、外部放熱体９の形状も角柱で側面フィン１７を
有するものあるいは、第２図に示す如く円柱で上面フィ
ン１８を有するものなど一般に放熱体、放熱フィンとし
て用いられているものを用いることができる。The external heat radiator 9 can be attached to the second metal plate 8 using an adhesive with excellent thermal conductivity, solder, or a mechanical method in which both parts are pre-fastened. The shape of the external heat radiator 9 may be a prism with side fins 17, or a cylinder with top fins 18 as shown in FIG. 2, which are generally used as heat radiators or heat radiating fins. can.
なお第１図すでは、第１の凹部１１の金属板２に搭載さ
れた半導体チップ１０と絶縁接着層５の表面に形成され
た導体回路４は金属線２０を介して接続されさらに、こ
の導体回路４は外部端子として働く端子ビン１５を挿入
するための絶縁層１と絶縁接続層５に形成されたスルホ
ールのスルホールメツキ層１６に接続している。In addition, in FIG. 1, the semiconductor chip 10 mounted on the metal plate 2 of the first recess 11 and the conductor circuit 4 formed on the surface of the insulating adhesive layer 5 are connected via the metal wire 20. The circuit 4 is connected to a through-hole plating layer 16 of through holes formed in the insulating layer 1 and the insulating connection layer 5 into which terminal pins 15 serving as external terminals are inserted.
また、第２図では、周知の如く絶縁接着層５の端部まで
展設された導体回路４にリードフレーム１９を外部端子
として接続し表面実装用の半導体チップキャリアを構成
している。Further, in FIG. 2, as is well known, a lead frame 19 is connected as an external terminal to a conductive circuit 4 extended to the end of an insulating adhesive layer 5 to constitute a semiconductor chip carrier for surface mounting.
次に、使用材料について述べると、第１図の半導体チッ
プキャリアを構成する絶縁Ｎ１及び絶縁接着層５として
は、基材に樹脂を含浸乾燥して得られたプリプレグの樹
脂を硬化した絶縁材料が用いられる。ここで絶縁層ｌの
樹脂としては耐熱性、耐湿性に優れかつ樹脂純度、特に
イオン性不純物の少ないものが好ましい。具体的には、
エポキシ樹脂、ポリイミド樹脂、フッソ樹脂、フエノル
樹脂、不飽和ポリエステル樹脂、ＰＰ○樹脂などが適し
ている。なお絶縁層１及び絶縁接着層５の基材としては
、紙よりガラス繊維などの無機材料の方が耐熱性、耐湿
性などに優れ好ましい。Next, regarding the materials used, as the insulation N1 and the insulation adhesive layer 5 that constitute the semiconductor chip carrier shown in FIG. used. Here, the resin for the insulating layer 1 is preferably one that has excellent heat resistance and moisture resistance, and has high resin purity, particularly low ionic impurities. in particular,
Epoxy resins, polyimide resins, fluorocarbon resins, phenolic resins, unsaturated polyester resins, PP○ resins, and the like are suitable. As the base material for the insulating layer 1 and the insulating adhesive layer 5, an inorganic material such as glass fiber is preferable to paper because it has better heat resistance and moisture resistance.
絶縁層ｆＦＪｉ５の半導体チップ１０の搭載側の表面の
導体回路４やこの反対側の表面の導体１３には、銅、真
鍮、アルミニウム、鉄、ニッケル、などから適宜選択し
て適用でき、中でも銅が導電性、熱伝導性に優れ特に好
ましい。導体回路４や導体１３を形成するにあたっては
、アディティブ法、サブトラクティブ法などの種々の方
法が用いられる。スルホールメツキ層１６や放熱用の第
２の凹部１２に露出する第１の金属板２及び、放熱用の
第２の凹部１２の内壁から絶縁接着層５の表面の導体１
３を接続し被覆する金属層１４は絶縁接着層５の表面の
導体回路４や導体１３の形成時にスルホールメツキ法な
どで形成される。The conductor circuit 4 on the surface of the insulating layer fFJi5 on the side where the semiconductor chip 10 is mounted and the conductor 13 on the opposite surface can be selected from copper, brass, aluminum, iron, nickel, etc., and among them, copper is used. It is particularly preferred because of its excellent electrical conductivity and thermal conductivity. In forming the conductor circuit 4 and the conductor 13, various methods such as an additive method and a subtractive method are used. The first metal plate 2 exposed to the through-hole plating layer 16 and the second recess 12 for heat radiation, and the conductor 1 on the surface of the insulating adhesive layer 5 from the inner wall of the second recess 12 for heat radiation.
The metal layer 14 connecting and covering the insulating adhesive layer 5 is formed by a through-hole plating method or the like when the conductor circuit 4 and the conductor 13 are formed on the surface of the insulating adhesive layer 5.
絶縁Ｎ１の貫通穴３に挿入される第１の金属板２、第１
の金属板２に接着層７を介して配設される第２の金属板
８および、第２の金属板８に取り付けられる外部放熱体
９としては、例えばｗ４Ｆｉ、銅合金板、銅−インバー
−銅合金板、鉄−ニッケル合金板、その他鋼板、鉄板、
アルミニウム板などを使用することができる。The first metal plate 2 inserted into the through hole 3 of the insulation N1, the first
The second metal plate 8 disposed on the metal plate 2 via the adhesive layer 7 and the external heat sink 9 attached to the second metal plate 8 include, for example, W4Fi, copper alloy plate, copper-invar- Copper alloy plates, iron-nickel alloy plates, other steel plates, iron plates,
An aluminum plate or the like can be used.
接着層７を形成する材料としては、銀粉入りエポキシ樹
脂やポリイミド樹脂などを用いることができる。As a material for forming the adhesive layer 7, epoxy resin containing silver powder, polyimide resin, or the like can be used.
本発明に係る半導体チップキャリアは叙述の如く絶縁層
の貫通穴に埋入された第１の金属板、この金属板と絶縁
層の一方の表面に絶縁接着層を介して配設された導体回
路及び、絶縁接着層に形成された半導体チップ搭載用の
第１の凹部を備え、他方の表面に配設された絶縁接着層
、この絶縁接着層に放熱用の第２の凹部を設けて前記第
１の金属板の周縁部を被覆する鍔を備え、それぞれの凹
部の底面に露出する前記第１の金属板の第２の凹部の表
面に接着層を介して第２の金属板が第２の凹部より突出
して配設されているので、第２の金属板への取り件部の
形状が第２の金属板よりも大きい形状の外部放熱体も容
易に取り付けることができ、外部放熱体の形状の自由度
が大きくなる。As described above, the semiconductor chip carrier according to the present invention includes a first metal plate embedded in a through hole of an insulating layer, and a conductor circuit disposed on one surface of the metal plate and the insulating layer via an insulating adhesive layer. and a first recess formed in the insulating adhesive layer for mounting the semiconductor chip, an insulating adhesive layer disposed on the other surface, and a second recess for heat dissipation provided in the insulating adhesive layer. The second metal plate is provided with a flange that covers the peripheral edge of the first metal plate, and the second metal plate is attached to the surface of the second recess of the first metal plate exposed at the bottom of each recess via an adhesive layer. Since it is arranged so as to protrude from the recessed part, it is possible to easily attach an external heat radiator whose attachment part to the second metal plate has a larger shape than the second metal plate, and the shape of the external heat radiator The degree of freedom increases.
したがって、半導体チップの高集積化、高機能化、高速
化によって増大する発熱に対応可能となるものである。Therefore, it is possible to cope with the increase in heat generation due to higher integration, higher functionality, and higher speed of semiconductor chips.
第１図は本発明の一実施例を示す断面図、第２図は本発
明の他の実施例である。
ｌ・・・絶縁層 ２・・・第１の金属板３・・・
貫通穴 ４・・・導体回路５・・・絶縁接着層
６・・・鍔
７・・・接着層 ８・・・第２の金属板９・・・
外部放熱体 １０・・・半導体チップ１１・・・第１の
凹部 １２・・・第２の凹部１３・・・導体 １４・
・・金属層FIG. 1 is a sectional view showing one embodiment of the invention, and FIG. 2 is another embodiment of the invention. l... Insulating layer 2... First metal plate 3...
Through hole 4...Conductor circuit 5...Insulating adhesive layer
6... Tsuba 7... Adhesive layer 8... Second metal plate 9...
External heat sink 10...Semiconductor chip 11...First recess 12...Second recess 13...Conductor 14.
・Metal layer
Claims (2)
金属板と絶縁層の一方の表面に絶縁接着層を介して配設
された導体回路及び、絶縁接着層に形成された半導体チ
ップ搭載用の第１の凹部を備え、他方の表面に配設され
た絶縁接着層、この絶縁接着層に放熱用の第２の凹部を
設けて前記第１の金属板の周縁部を被覆する鍔を備え、
それぞれの凹部の底面に露出する前記第１の金属板の第
２の凹部の表面に接着層を介して第２の金属板が前記第
２の凹部から突出して配設されてなることを特徴とする
半導体チップキャリア。(1) A first metal plate embedded in a through hole of an insulating layer, a conductor circuit disposed on one surface of the metal plate and the insulating layer via an insulating adhesive layer, and a conductive circuit formed in the insulating adhesive layer. a first recess for mounting a semiconductor chip; an insulating adhesive layer disposed on the other surface; a second recess for heat dissipation is provided in the insulating adhesive layer to cover the peripheral edge of the first metal plate; Equipped with a covering tsuba,
A second metal plate is provided on the surface of the second recess of the first metal plate exposed at the bottom surface of each recess through an adhesive layer so as to protrude from the second recess. Semiconductor chip carrier.
配が相反する傾斜辺を有する台形の傾斜辺が前記鍔の内
周端に当接することを特徴とする請求項１記載の半導体
チップキャリア。(2) The second metal plate has a trapezoidal cross section, and the sloped sides of the trapezoid have sloped sides with opposite slopes on both sides, and the sloped sides of the trapezoid abut against the inner peripheral end of the collar. semiconductor chip carrier.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1198833A JPH0362956A (en) | 1989-07-31 | 1989-07-31 | Semiconductor chip carrier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1198833A JPH0362956A (en) | 1989-07-31 | 1989-07-31 | Semiconductor chip carrier |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0362956A true JPH0362956A (en) | 1991-03-19 |
Family
ID=16397677
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1198833A Pending JPH0362956A (en) | 1989-07-31 | 1989-07-31 | Semiconductor chip carrier |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0362956A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5942796A (en) * | 1997-11-17 | 1999-08-24 | Advanced Packaging Concepts, Inc. | Package structure for high-power surface-mounted electronic devices |
| JP2011258878A (en) * | 2010-06-11 | 2011-12-22 | Otics Corp | Element mounting structure |
| JP2017069253A (en) * | 2015-09-28 | 2017-04-06 | ニチコン株式会社 | Semiconductor Power Module |
| JP2017069547A (en) * | 2015-08-31 | 2017-04-06 | ジョンソン エレクトリック ソシエテ アノニム | Thermally efficient electrical assembly |
-
1989
- 1989-07-31 JP JP1198833A patent/JPH0362956A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5942796A (en) * | 1997-11-17 | 1999-08-24 | Advanced Packaging Concepts, Inc. | Package structure for high-power surface-mounted electronic devices |
| JP2011258878A (en) * | 2010-06-11 | 2011-12-22 | Otics Corp | Element mounting structure |
| JP2017069547A (en) * | 2015-08-31 | 2017-04-06 | ジョンソン エレクトリック ソシエテ アノニム | Thermally efficient electrical assembly |
| JP2017069253A (en) * | 2015-09-28 | 2017-04-06 | ニチコン株式会社 | Semiconductor Power Module |
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