JPH0362246A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JPH0362246A
JPH0362246A JP1198215A JP19821589A JPH0362246A JP H0362246 A JPH0362246 A JP H0362246A JP 1198215 A JP1198215 A JP 1198215A JP 19821589 A JP19821589 A JP 19821589A JP H0362246 A JPH0362246 A JP H0362246A
Authority
JP
Japan
Prior art keywords
ram
output
outputs
semiconductor integrated
data
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1198215A
Other languages
Japanese (ja)
Inventor
Yoshihiro Mabuchi
義宏 間淵
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP1198215A priority Critical patent/JPH0362246A/en
Publication of JPH0362246A publication Critical patent/JPH0362246A/en
Pending legal-status Critical Current

Links

Landscapes

  • Dram (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)

Abstract

PURPOSE:To decrease the number of test-only pins of a RAM block by providing a coincidence detecting circuit which inputs the outputs of at least two RAM blocks and detects the coincidence or discordance between the outputs of both RAM blocks and a terminal which takes the output of the coincidence detecting circuit to the outside. CONSTITUTION:The same data are written into a RAM(I) 3 and a RAM(II) 4 via an R/W control input 6, an address input 7, and a data input 8. When the data on both RAM(I) 3 and RAM(II) 4 are read out at one time, a decision output 9 is set at L and H levels if the data on both RAMs are coincident and not coincident with each other respectively. Then the output 9 is outputted to a decision output terminal 10. Therefore an H level of discordance is outputted if one or both of RAM(I) 3 and RAM(II) 4 have the faults. Then the RAM blocks can be tested just by monitoring a single pin only. As a result, the number of test-only pins can be decreased and the packing area is increased for a semiconductor integrated circuit.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体集積回路に利用され、特に、RAM (
ランダムアクセスメモリ〉ブロックと論理回路とを有す
る半導体集積回路に関する。
[Detailed Description of the Invention] [Industrial Application Field] The present invention is applied to semiconductor integrated circuits, and in particular, to RAM (
The present invention relates to a semiconductor integrated circuit having a random access memory block and a logic circuit.

〔概要〕〔overview〕

本発明は、論理、回路部と、複数のRAMブロックとを
含む半導体集積回路において、 少なくとも二つの前記RAMブロックの出力を入力し各
RAMブロックの出力が一致しているか否かを検出出力
する一致検出回路と、この一致検出回路の出力を外部に
取り出す端子とを設けることにより、 前記RAMブロックの試験専用ピン数を減少させたもの
である。
The present invention provides a semiconductor integrated circuit including a logic circuit, a circuit section, and a plurality of RAM blocks. By providing a detection circuit and a terminal for taking out the output of the coincidence detection circuit to the outside, the number of test-dedicated pins of the RAM block is reduced.

〔従来の技術〕[Conventional technology]

従来、この種の半導体集積回路はRAMブロック単体を
試験するため、前記RAMブロック自身に直接アクセス
できるように前記RAMブロックの入出力本数以上の試
験専用ピンを必要としていた。
Conventionally, in order to test a single RAM block, this type of semiconductor integrated circuit has required a number of test-dedicated pins greater than the number of input/output pins of the RAM block so that the RAM block itself can be directly accessed.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

前述した従来の半導体集積回路は、RAMブロックの入
出力ピン数に応じて、多数の試験専用ピンを設定しなけ
ればならないので、搭載パフケージが多ピン化し、実装
面積が増大し、コストに多大なる影響を与える欠点があ
った。
In the conventional semiconductor integrated circuit described above, it is necessary to set a large number of dedicated test pins according to the number of input/output pins of the RAM block, which increases the number of pins in the mounting puff cage, increases the mounting area, and increases costs. There were some drawbacks that affected me.

本発明の目的は、前記の欠点を除去することにより、試
験専用ピン数を減らし、実装面積の増大を抑えコストを
低減できる半導体集積回路を提供することにある。
An object of the present invention is to provide a semiconductor integrated circuit which can reduce the number of test-dedicated pins, suppress an increase in mounting area, and reduce costs by eliminating the above-mentioned drawbacks.

〔問題点を解決するための手段〕[Means for solving problems]

本発明は、論理回路部と、複数のRAMブロックとを含
む半導体集積回路において、少なくとも二つの前記RA
Mブロックの出力を入力し各RAMブロックの出力が一
致しているか否かを検出出力する一致検出回路と、この
一致検出回路からの出力を外部に取り出す端子とを設け
たことを特徴とする。
The present invention provides a semiconductor integrated circuit including a logic circuit section and a plurality of RAM blocks, in which at least two of the RA
The present invention is characterized in that it is provided with a coincidence detection circuit which inputs the outputs of the M blocks and detects and outputs whether the outputs of each RAM block match, and a terminal which takes out the output from this coincidence detection circuit to the outside.

〔作用〕[Effect]

各RAMブロックに同一試験データを入力し、その出力
データについて一致検出回路で一致しているか否かを検
出する。すなわち、一致すれば各RAMブロックは正常
動作であり、不一致であればいずれかのRAMブロック
が不正常動作であると判定できる。
The same test data is input to each RAM block, and a match detection circuit detects whether or not the output data match. That is, if they match, it can be determined that each RAM block is operating normally; if they do not match, it can be determined that one of the RAM blocks is operating abnormally.

従って、試験専用ピンは1本でよいことになり、大幅に
試験専用ピンを削減することが可能となる。
Therefore, only one test-dedicated pin is required, making it possible to significantly reduce the number of test-dedicated pins.

〔実施例〕〔Example〕

以下、本発明の実施例について図面を参照して説明する
Embodiments of the present invention will be described below with reference to the drawings.

第1図は本発明の一実施例の要部を示すブロック構成図
である。
FIG. 1 is a block diagram showing the main parts of an embodiment of the present invention.

本実施例の半導体集積回路1は、論理回路部2と、二つ
のRAM (I)3とRAM (II)4とを含み、さ
らに本発明の特徴とするところの、RAM(1)3およ
びRAM (II)4の出力を入力し、RAM (I)
3の出力とRAM (n)4の出力とが一致しているか
否かを検出出力する一致検出回路5と、この一致検出回
路5からの判定出力9を外部に取り出す端子としての判
定出力端子10とを含んでいる。
The semiconductor integrated circuit 1 of this embodiment includes a logic circuit section 2 and two RAM (I) 3 and RAM (II) 4. (II) Input the output of 4, RAM (I)
A coincidence detection circuit 5 detects and outputs whether the output of 3 and the output of RAM (n) 4 match, and a judgment output terminal 10 serves as a terminal for taking out the judgment output 9 from this coincidence detection circuit 5 to the outside. Contains.

そして、一致検出回路5は、RAMブロック(I)3と
RAMブロック(■)4との出力をそれぞれ人力して両
者の不一致をとる二つの排他的論理和回路(EX−OR
回路) 5aおよび5bと、排他的論理和回路5aおよ
び5bの出力の論理和をとる論理和回路5cとを含み、
RAM (I)3およびRAM (n)4には、それぞ
れR/W (読出し/書込み)制御人力6、アドレス入
カフおよびデータ人力8が入力されるよう接続される。
The coincidence detection circuit 5 then operates two exclusive OR circuits (EX-OR circuits) that manually calculate the mismatch between the outputs of the RAM block (I) 3 and the RAM block (■) 4, respectively.
circuit) 5a and 5b, and an OR circuit 5c that ORs the outputs of the exclusive OR circuits 5a and 5b,
RAM (I) 3 and RAM (n) 4 are connected to receive R/W (read/write) control power 6, address input cuff, and data power 8, respectively.

次に、本実施例の動作について説明する。Next, the operation of this embodiment will be explained.

R/W制御人力6、アドレス人カフおよびデータ人力8
によって、RAM (1)3およびRAM(■)4に同
一データを書き込み、RAM (I)3およびRAM 
(II)4を同時に読み出すことによって、もし、デー
タが一致しているならば判定出力9は「L」レベル、不
一致ならびrHJレベルとなり判定出力端子lOに出力
される。これによってRAM (I)3およびRAM 
(II)4のどちらか、もしくは両方に故障があれば不
一致の「Hレベルが出力され、lピンだけをモニタすれ
ばRAMブロックの試験が可能になる。
R/W control manpower 6, address man cuff and data manpower 8
writes the same data to RAM (1) 3 and RAM (■) 4, and writes the same data to RAM (I) 3 and RAM (■) 4.
(II) By reading out 4 at the same time, if the data match, the judgment output 9 becomes the "L" level, and if they do not match, the judgment output 9 becomes the rHJ level and is output to the judgment output terminal 1O. This allows RAM (I)3 and RAM
(II) If there is a failure in either or both of 4, a mismatched "H" level is output, and it is possible to test the RAM block by monitoring only the 1 pin.

第2図は一致検出回路の他の例を示す回路図である。FIG. 2 is a circuit diagram showing another example of the coincidence detection circuit.

本例の一致検出回路11は、二つのRAMブロックの出
力をそれぞれ入力する排他的否定論理和回路(EX−N
OR回路)11aおよびllbと、この排他的否定論理
和回路11aおよびllbの出力を入力し論理積をとり
判定出力9を出力する論理積回路11Cとを含んでいる
The coincidence detection circuit 11 of this example is an exclusive NOR circuit (EX-N
(OR circuit) 11a and llb, and an AND circuit 11C which inputs the outputs of the exclusive NOR circuits 11a and llb, performs a logical product, and outputs a determination output 9.

この場合には、二つのRAMブロックの出力が一致した
ときに判定出力9はrHJレベルとなり、同様にRAM
ブロックの試験が可能である。
In this case, when the outputs of the two RAM blocks match, the judgment output 9 becomes the rHJ level, and similarly the RAM
Block testing is possible.

〔発明の効果〕〔Effect of the invention〕

以上説明したように、本発明は、複数のRAMブロック
の出力同士を一致検出回路で判定できるようにすること
により、試験専用ピンの数を減らすことができ、実装面
積の増大を抑えコストを低減できる効果がある。
As explained above, the present invention allows the outputs of multiple RAM blocks to be judged by a coincidence detection circuit, thereby reducing the number of test-dedicated pins, suppressing an increase in mounting area, and reducing costs. There is an effect that can be achieved.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の一実施例の要部を示すブロックa戊図
。 第2図はその一致検出回路の他の例を示す回路図。 1・・・半導体集積論理回路、2・・・論理回路部、3
・・・RAM (I) 、4・・・RAM (n) 、
5.11・・・−致検出回路、6・・・R/W制御入力
、7・・・アドレス入力、8・・・データ入力、9・・
・判定出力、10・・・判定出力端子。
FIG. 1 is a block diagram showing essential parts of an embodiment of the present invention. FIG. 2 is a circuit diagram showing another example of the coincidence detection circuit. 1... Semiconductor integrated logic circuit, 2... Logic circuit section, 3
...RAM (I), 4...RAM (n),
5.11... - match detection circuit, 6... R/W control input, 7... address input, 8... data input, 9...
- Judgment output, 10... Judgment output terminal.

Claims (1)

【特許請求の範囲】 1、論理回路部と、複数のRAMブロックとを含む半導
体集積回路において、 少なくとも二つの前記RAMブロックの出力を入力し各
RAMブロックの出力が一致しているか否かを検出出力
する一致検出回路と、 この一致検出回路からの出力を外部に取り出す端子と を設けたことを特徴とする半導体集積回路。
[Claims] 1. In a semiconductor integrated circuit including a logic circuit section and a plurality of RAM blocks, the outputs of at least two RAM blocks are input and it is detected whether the outputs of each RAM block match. A semiconductor integrated circuit comprising: a coincidence detection circuit that outputs an output; and a terminal that takes out the output from the coincidence detection circuit to the outside.
JP1198215A 1989-07-31 1989-07-31 Semiconductor integrated circuit Pending JPH0362246A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1198215A JPH0362246A (en) 1989-07-31 1989-07-31 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1198215A JPH0362246A (en) 1989-07-31 1989-07-31 Semiconductor integrated circuit

Publications (1)

Publication Number Publication Date
JPH0362246A true JPH0362246A (en) 1991-03-18

Family

ID=16387408

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1198215A Pending JPH0362246A (en) 1989-07-31 1989-07-31 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPH0362246A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6515915B2 (en) 1998-02-23 2003-02-04 Micron Technology, Inc. Circuits and methods for outputting multi-level data through a single input/output pin

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6515915B2 (en) 1998-02-23 2003-02-04 Micron Technology, Inc. Circuits and methods for outputting multi-level data through a single input/output pin
US6519190B2 (en) 1998-02-23 2003-02-11 Micron Technology, Inc. Circuits and methods for inputting multi-level data through a single input/output pin
US6525958B2 (en) * 1998-02-23 2003-02-25 Micron Technology, Inc. Circuits and methods for compressing multi-level data through a single input/output pin

Similar Documents

Publication Publication Date Title
JP2001006395A (en) Semiconductor memory device and reading method at its test mode
JP2953737B2 (en) Semiconductor memory having a multi-bit parallel test circuit
JPH0362246A (en) Semiconductor integrated circuit
JPS6159697A (en) Gate array
JPH0362245A (en) Semiconductor integrated circuit
KR19990079785A (en) Built-in magnetic test circuit
KR20010075269A (en) A method for testing a memory array and a memory-based device so testable with a fault response signalizing mode for when finding predetermined correspondence between fault patterns signalizing one such fault pattern only in the form of a compressed response
JPH07272499A (en) Semiconductor memory device
JPH01162300A (en) Rom checking circuit testing system
JPH051832Y2 (en)
JPS6032213B2 (en) Logical unit diagnostic method
JPH07192495A (en) Test circuit for semiconductor memory
JP2002372570A (en) Multichip module and its testing method
JPH04184799A (en) Semiconductor memory
JPH01293650A (en) Integrated circuit
JPS61271700A (en) Memory test equipment
JPH02283000A (en) Semiconductor memory
JPH0850164A (en) Test facilitating circuit
JPH05204771A (en) Memory control system
JPS62289992A (en) Memory circuit
JPH06223600A (en) Defect analysis memory device with fail segregation function
JPH0488450A (en) Memory access controller
JPH046482A (en) Semiconductor device
JPS63281542A (en) System for confirming memory action
JP2000122887A (en) Method for detecting hardware abnormality