JPH0343741A - Production of semiconductor device - Google Patents
Production of semiconductor deviceInfo
- Publication number
- JPH0343741A JPH0343741A JP17962189A JP17962189A JPH0343741A JP H0343741 A JPH0343741 A JP H0343741A JP 17962189 A JP17962189 A JP 17962189A JP 17962189 A JP17962189 A JP 17962189A JP H0343741 A JPH0343741 A JP H0343741A
- Authority
- JP
- Japan
- Prior art keywords
- resist
- pattern
- photoresist
- forming
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 12
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 13
- 238000006884 silylation reaction Methods 0.000 claims description 6
- 229920003986 novolac Polymers 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 238000006068 polycondensation reaction Methods 0.000 claims 1
- 238000001312 dry etching Methods 0.000 abstract description 9
- 125000004836 hexamethylene group Chemical group [H]C([H])([*:2])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[*:1] 0.000 abstract description 3
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 230000001678 irradiating effect Effects 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 229920005591 polysilicon Polymers 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 206010011732 Cyst Diseases 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 208000031513 cyst Diseases 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
Landscapes
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、半導体装置の製造方法、詳しくは、ＬＳＩ等
の製造技術であるホトレジストパターン形成方法に関す
るものである。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a method for manufacturing a semiconductor device, and more particularly, to a method for forming a photoresist pattern, which is a manufacturing technology for LSI and the like.
従来の技術
ＬＳＩ製造におけるパターン形成工程では、ポジ型ホト
レジストを用いて、所望の回路パターンを形成するホト
リソグラフィー工程と、そのレジストパターンを半導体
基板に転写するドライエッチ工程とが重要である。レジ
ストパターンがサブミクロン領域になると、レジストパ
ターンの寸法とドライエッチ後のパターン寸法との差が
無視できなくなってくる。従来のパターン形成方法では
、この寸法差は、レジストの耐ドライエツチ特性により
決まる。このため、ポリシリコンあるいはタングステン
シリサイドのパターン形成時、寸法シフト量は、０．２
〜０．３μｍど大きくなり、サブミクロンパターンの形
成が困難となってきた。BACKGROUND OF THE INVENTION In a pattern forming process in conventional LSI manufacturing, important are a photolithography process for forming a desired circuit pattern using a positive photoresist, and a dry etching process for transferring the resist pattern onto a semiconductor substrate. When the resist pattern becomes a submicron region, the difference between the dimensions of the resist pattern and the dimensions of the pattern after dry etching becomes impossible to ignore. In conventional patterning methods, this dimensional difference is determined by the dry etch resistance properties of the resist. Therefore, when forming polysilicon or tungsten silicide patterns, the amount of dimensional shift is 0.2
As the size increases to about 0.3 μm, it has become difficult to form submicron patterns.
発明が解決しようとする課題
ＬＳＩ製造プロセスは、シリコン基板上における薄膜の
形成およびそれらのエツチング工程から成る。パターン
形成は、ポジ型ホトレジストを用いて、所望のレジスト
パターンを形成、その後ドライエツチングにより半導体
基板上に回路バターンを形成するものである。従来のパ
ターン形成技術テは、パターン寸法がサブミクロン領域
になると、１／シストパタ一ン寸法とドライエッチ後の
寸法の差が無視できなくなる。Problems to be Solved by the Invention The LSI manufacturing process consists of forming thin films on a silicon substrate and etching them. Pattern formation involves forming a desired resist pattern using a positive type photoresist, and then dry etching to form a circuit pattern on the semiconductor substrate. In conventional pattern forming techniques, when the pattern size reaches the submicron range, the difference between the 1/cyst pattern size and the size after dry etching cannot be ignored.
本発明は、上記の欠点を除去するもので、有効な微細パ
ターン形成方法を提供しようとするものである。The present invention aims to eliminate the above-mentioned drawbacks and provide an effective method for forming fine patterns.
課題を解決するための手段
本発明は、半導体基板上に、ポジ型ホトレジストを用い
マスクパターンを形成した後、シリル化剤蒸気中、遠紫
外光を照射し、レジスト表面をシリル化させるものであ
る。Means for Solving the Problems The present invention forms a mask pattern on a semiconductor substrate using a positive photoresist, and then irradiates it with deep ultraviolet light in a silylating agent vapor to silylate the resist surface. .
作用
本発明によると、パターン形成されたホトレジストの表
面がシリル化されて、同ホトレジストの耐ドライエツチ
性が向上する。According to the present invention, the surface of the patterned photoresist is silylated, thereby improving the dry etch resistance of the photoresist.
実施例
本発明のパターン形成工程を第１図ａ −Ｃに工程順断
面図で示す。第１図ａは、ポジ型ホトレジスト１を用い
て半導体基板２に、ポリシリコン５を４００ｎｍの厚み
に積んだ層の上にレジストパターン形成したものを示す
。レジストパターン形成後、ヘキサメチレンシラザン蒸
気中、遠紫外光４を照射して、第１図すのように、レジ
スト表面部分をシリル化して、シリル化層３を形成する
。EXAMPLE The pattern forming process of the present invention is shown in step-by-step cross-sectional views in FIGS. 1A-C. FIG. 1a shows a resist pattern formed on a layer of polysilicon 5 of 400 nm thick on a semiconductor substrate 2 using a positive photoresist 1. As shown in FIG. After the resist pattern is formed, deep ultraviolet light 4 is irradiated in hexamethylene silazane vapor to silylate the resist surface portion to form a silylated layer 3 as shown in FIG.
そして、レジスト表面をシリル化した後、第１図Ｃのよ
うに、ポリシリコンエッチを行う。第２図に、レジスト
中の７ボラツク樹脂とシリル化剤（ヘキサメチレンシラ
ザンなど）のシリル化反応系を化学式によって示す。こ
の時のシリル化率は、Ｓｉの含有率で３〜１０ｗｔ％程
度である・本発明の方法によると、レジスト寸法とドラ
イエッチ後のポリシリコンの寸法差は、０．０５μｍ以
内とむり、従来の場合と比べ（寸法変換差０．２μｍ）
小さくなる。After the resist surface is silylated, polysilicon is etched as shown in FIG. 1C. FIG. 2 shows a chemical formula of the silylation reaction system between the 7-borac resin and the silylation agent (hexamethylene silazane, etc.) in the resist. The silylation rate at this time is about 3 to 10 wt% in terms of Si content. According to the method of the present invention, the difference in resist dimension and polysilicon after dry etching is within 0.05 μm, compared to the conventional method. Compared to the case of (dimensional conversion difference 0.2 μm)
becomes smaller.
上記実施例では、レジストの耐ドライエツチ性が向上し
、レジスト寸法とドライエッチ後のポリシリコン寸法差
が小さくなり、サブミクロンパターンが形成しやすい。In the above embodiment, the dry etch resistance of the resist is improved, and the difference between the resist dimension and the polysilicon dimension after dry etching is reduced, making it easier to form a submicron pattern.
発明の効果
本発明によれば、ドライエッチ時による寸法シフト量が
少なくなり、所望のパターンが形成される。Effects of the Invention According to the present invention, the amount of dimensional shift due to dry etching is reduced, and a desired pattern is formed.
第１図は本発明のプロセスフローを示す工程順断面図、
第２図はポジ型ホトレジストのノボラック樹脂とシリル
化剤の反応系図である。
１・・・・・・ホトレジスト、２・・・・・・半導体基
板、３・・・・・・シリル化層、４・・・・・・遠紫外
光、５・・・・・・ポリシリコン。FIG. 1 is a step-by-step sectional view showing the process flow of the present invention;
FIG. 2 is a reaction diagram of a novolak resin and a silylating agent in a positive photoresist. 1...Photoresist, 2...Semiconductor substrate, 3...Silylated layer, 4...Deep ultraviolet light, 5...Polysilicon .
Claims (2)
し、前記ホトレジストに所望の回路パターンを形成する
工程と前記パターン形成後、シリル化剤蒸気中、遠紫外
光を照射して、前記ホトレジストの表面をシリル化する
ことを特徴とする半導体装置の製造方法。(1) A step of coating a novolak photoresist on a semiconductor substrate and forming a desired circuit pattern on the photoresist. After forming the pattern, deep ultraviolet light is irradiated in silylation agent vapor to coat the surface of the photoresist. A method for manufacturing a semiconductor device characterized by silylation.
と縮重合反応をおこしてシロキサン結合することを特徴
とする請求項１記載の半導体装置の製造方法。(2) The method for manufacturing a semiconductor device according to claim 1, wherein the silylation agent causes a polycondensation reaction with the photoresist to form a siloxane bond by irradiation with deep ultraviolet light.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17962189A JPH0343741A (en) | 1989-07-11 | 1989-07-11 | Production of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17962189A JPH0343741A (en) | 1989-07-11 | 1989-07-11 | Production of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0343741A true JPH0343741A (en) | 1991-02-25 |
Family
ID=16068964
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17962189A Pending JPH0343741A (en) | 1989-07-11 | 1989-07-11 | Production of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0343741A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20020000351A (en) * | 2000-06-23 | 2002-01-05 | 박종섭 | A method for a fine pattern of a semiconductor device |
| WO2005010972A1 (en) * | 2003-07-23 | 2005-02-03 | Fsi International, Inc. | Improvements in the use of silyating agents |
-
1989
- 1989-07-11 JP JP17962189A patent/JPH0343741A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20020000351A (en) * | 2000-06-23 | 2002-01-05 | 박종섭 | A method for a fine pattern of a semiconductor device |
| WO2005010972A1 (en) * | 2003-07-23 | 2005-02-03 | Fsi International, Inc. | Improvements in the use of silyating agents |
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