JPH0339357A - Actinic radiation-sensitive polymer composition - Google Patents

Abstract

PURPOSE:To provide the subject composition giving a high film-leaving constant on the exposure of a g line stepper, having excellent light sensitivity and suitable for the passivation films of semiconductors, etc., by comprising a polymer having specific structural units, a compound having dimerizable or polymerizable unsaturated bonds, etc. CONSTITUTION:An actinic radiation-sensitive polymer composition comprises (A) a polymer having the structural units of formula I (R1 is >=2C tri or tetravalent organic group; R2 is >=2C divalent organic group; R3 is H or alkali metal counter ion; n is 1 or 2), (B) a compound having an unsaturated bond capable of being dimerized or polymerized with actinic radiation and an amino group or a quaternary salt thereof, (C) a coumarin compound of formula II (R4 and R5 are >=2C monovalent organic group; R6 is >=3C monovalent organic group), (D) 3,3',4,4'-tetra(t-butylperoxycarbonyl)benzophenone and (E) a nitrosoamine compound.

Description

Detailed Description of the Invention [Industrial Application Field] The present invention relates to an actinic radiation-sensitive polymer composition, and more particularly, to a photosensitive polymer composition that provides a high residual film rate during exposure using a G-ray stepper. The present invention relates to improvements in polyimide compositions.

[Prior Art] Photosensitive polyimide compositions include compositions in which a compound containing a carbon-carbon double bond and an amino group or a quaternized salt thereof that can be dimerized or polymerized by actinic radiation is added to polyamic acid (for example, (Japanese Patent Publication No. 59-52822) or a polyimide precursor composition in which photosensitivity is introduced into polyamic acid with an ester group (for example, U.S. Pat. No. 395,751)
No. 2, Specification No. 4040831) is known.

However, when such conventional compositions are exposed by a stepper using the G-line of a mercury lamp currently used in the manufacture of semiconductor devices, the residual film rate decreases significantly due to the effects of long wavelength exposure and oxygen desensitization, resulting in a desired film thickness. It is difficult to obtain such a film, and it has the disadvantage of causing film roughness during development.

[Problems to be Solved by the Invention] The present invention was devised in view of the various drawbacks of the prior art, and its purpose is to improve actinic radiation sensitivity that can reduce film loss and film roughness during exposure with a G-line stepper. An object of the present invention is to provide a polymer composition.

[Means for Solving the Problems] The object of the present invention is to achieve the following configurations, namely (1) (a)
)General formula %Formula %] ) (wherein R1 is a trivalent or tetravalent organic group having at least two or more carbon atoms, R2 is a divalent organic group having at least two or more carbon atoms, R1 represents hydrogen or an alkali metal counter ion. n is 1 or 2. A compound containing a saturated bond and an amino group or a quaternized salt thereof (R4 and R5 are monovalent organic groups having at least 2 carbon atoms, R6 is a monovalent organic group having at least 3 carbon atoms) (represents a monovalent organic group having an atom) [3] and (d) 3.3'', 4.4-tetra(t-butylperoxycarbonyl)benzophenone [
(e) a nitrosamine compound [5].

This is achieved by

The polymer having the structural unit [1] in the present invention is a polymer having a structure represented by the above general formula and having an imide ring or other layered structure by heating or using a suitable catalyst (hereinafter referred to as a polyimide polymer). It is possible.

In the above structural unit [1], R1 is a trivalent or tetravalent organic group having at least two or more carbon atoms. In view of the heat resistance of the polyimide polymer, it is preferable that R1 has a structure in which the bond to the carbonyl group of the polymer main chain is directly formed from an aromatic heterocycle. Therefore, as R1,
Contains an aromatic ring or an aromatic heterocycle, and has 6 to 3 carbon atoms
A trivalent or tetravalent group of 0 is preferred.

(In the formula, the bond represents a bond with the carbonyl group of the polymer main chain, and the carbonyl group of the polymer side chain is located at the ortho position to the bond, but this bond is not shown in the above structural formula. ), but are not limited to these.

Further, in the polymer having the structural unit [1], R1 may be composed of only one type among these, or may be a copolymer composed of two or more types.

Particularly desirable as R1 are: (same as above).

In the above structural unit [1, R2 is a divalent organic group having at least two or more carbon atoms, but from the viewpoint of heat resistance when made into a polyimide polymer, the bond with the amide group of the polymer main chain is It is preferable to have a structure in which is directly formed from an aromatic ring or an aromatic heterocycle. Therefore, R2 is preferably a divalent group containing an aromatic ring or an aromatic heterocycle and having 6 to 30 carbon atoms.

(In the formula, the bond represents a bond with an amide group in the main chain). Further, these may have a nuclear substituent such as an amino group, an azide group, a carboxyl group, or a sulfonamide group within a range that does not adversely affect the heat resistance of the polyimide polymer.

As a particularly preferable example of those having these nuclear substituents, in a polymer having the structural unit [1], R2 may be composed of only one type of these, or a co-polymer composed of two or more of these. It may also be a polymer.

Furthermore, in order to improve the adhesiveness of the polyimide polymer, it is also possible to copolymerize an aliphatic group having a siloxane bond as R2 within a range that does not reduce the heat resistance.

A preferred specific example is Examples include.

Specific examples of polymers containing structural unit [1] as main components include pyromellitic dianhydride, 4,4'-diaminodiphenyl ether, and 3.3',4,4'-benzophenonetetracarboxylic acid dianhydride. 4,4'-diaminodiphenyl ether, 3.3',4.4'-biphenyltetracarboxylic dianhydride, 4,4'-diaminodiphenyl ether, pyromellitic dianhydride, and 3. 3'-(or 4.
4') Diaminodiphenylsulfone, 3.3', 4
．． 4'-benzophenonetetracarboxylic dianhydride; and 3. 3'-(or 4.4') diaminodiphenylsulfone, 3, 3', 4. 4'-biphenyltetracarboxylic dianhydride; and 3. 3'-(or 4.4'
) Diaminodiphenylsulfone, pyromellitic dianhydride and 4,4'-diaminodiphenylsulfide, 3.3',4.4'-benzophenonetetracarboxylic dianhydride and 4,4'-diaminodiphenylsulfide, 3. 3',4.4'-biphenyltetracarboxylic dianhydride and 4,4'-diaminodiphenylsulfide, 3.3',4.4'-benzophenonetetracarboxylic dianhydride and paraphenylenediamine, 3.3 ',
4.4'-biphenyltetracarboxylic dianhydride and paraphenylenediamine, 3.3',4.4'-diphenyl ethertetracarboxylic dianhydride and 4,4'-
Polyamic acids synthesized from diaminodiphenyl ether, 3.3', 4.4'-diphenyl ether tetracarboxylic dianhydride and paraphenylene diamine are preferably used.

The polymer having the structural unit [1] may be composed only of the structural unit [1], or may be a copolymer or a blend with other structural units. The type and amount of structural units used in the copolymerization are desirably selected within a range that does not significantly impair the heat resistance of the polyimide polymer obtained by the final heat treatment.

In the present invention, the compound [2] containing an unsaturated bond and an amino group or a quaternized salt thereof that can be dimerized or polymerized by actinic radiation includes a carbon-carbon double bond and an amino group or a quaternized salt thereof in one molecule. Compounds containing amino groups are used.

The compound [2] in the present invention has the following general formula [A
], [B] or [C] or a quaternized salt thereof is preferably used.

General formula [A] \ R1□ (where R7 is hydrogen or a phenyl group, R8 is hydrogen or a lower alkyl group having 1 to 6 carbon atoms, R3 is a substituted or unsubstituted hydrocarbon group having 2 to 12 carbon atoms, R1o1R1 □ each represents a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms), General formula [B] (R, □ represents a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms), General Formula [(%Formula%) or represents a methyl group, n+1=3, n=1-3.

) Preferred specific examples include: CH.

/ \ CH3 \ CR2 CH3 CR2=CHCH2NR2.

CH3 / CH2=C \ CH2NR2 (CH2=CHCH2→-2NH Examples include, but are not limited to, the following.

From the viewpoint of actinic radiation sensitivity, amino compounds having an acrylic or methacrylic group as an unsaturated group are particularly desirable.

In the case of a compound in which the amino group is not quaternized, it is desirable to combine the structural unit [1] with one in which R1 is hydrogen.

In the case of compounds in which the amine group is quaternized, the structural unit [
1] in which R3 is an alkali metal ion or an ammonium ion.

Compound [2] is preferably blended in an amount of 0.05 equivalents or more, more preferably 0.3 equivalents or more, and twice as much as the total carboxyl groups (or salts thereof) of the polymer whose main component is structural unit [1]. Preferably, it is mixed with the polymer in an equivalent amount or less. Outside this range, photosensitivity may deteriorate,
Care must be taken because the allowable range of development conditions such as development time and temperature may be narrowed.

The coumarin compound [3] used in the present invention has the general formula (R4, R5 are at least 2 or more, preferably 10
R6 is a monovalent organic group having at least 3 carbon atoms, preferably 30 or less carbon atoms. ) is a compound having a coumarin skeleton, and any substituent on the skeleton may be used as long as it absorbs the G-line (436 nm) of a mercury lamp.

However, from the point of view of workability, materials that absorb into the visible light region are not preferred. From this point of view, preferred coumarin compounds in the present invention include, for example, the following.

The coumarin compound [3] is preferably mixed in an amount of 0.1% by weight or more, more preferably 0.5% by weight or more based on the weight of the polymer, based on the weight of the polymer whose main component is the structural unit [1]. , and is preferably mixed in a proportion of 20% by weight or less. Outside this range, photosensitivity may deteriorate,
Please note that the tolerance range for development time and development conditions is narrow.

3, 3', 4 used in the present invention.
4'-tetra(t-butylperoxycarbonyl)benzophenone [4] is preferably added in an amount of 0.05% by weight or more and 10% or less based on the weight of the polymer containing the structural unit [1] as a main component. If it is out of this range, it may adversely affect the developability and stability of the composition, so care must be taken.

The nitrosamine compound [5] in the present invention is not particularly limited as long as it can be used as a polymerization inhibitor, such as ammonium nitrosophenylhydroxylamine, N-nitrosodiphenylamine, N,N-dimethylnitrosoaniline, NlN-diethylnitrosoaniline. ,
N-nitrosodiethylamine, nitrosodimethylaminophenol, nitrosodiethylaminophenol, N-
Examples include nitroso-N-methylaniline, N-nitroso-N-phenylhydroxylamine, nitrosohydroxyquinoline and dinitrosopentamethylenetetramine.

The nitrosamine compound [5] is preferably added in an amount of 0.01% by weight or more and 2% by weight or less based on the weight of the polymer containing the structural unit [1] as a main component.

If it is out of this range, it may adversely affect the developability and stability of the composition, so care must be taken.

Next, an example of a method for producing the composition of the present invention will be explained. First, a diamine compound and an acid dianhydride are reacted in a solvent to obtain a polymer containing the structural unit [1] as a main component. Next, compounds [2], [3], [4] and [5] were added to this solution.
It can also be manufactured by dissolving and blending other additives as necessary. In addition, as the above-mentioned polymer, a solid polyamic acid polymer or a polymer separated and purified from the solution after the reaction may be redissolved and used.

As the solvent used in the above production method, polar solvents are preferably used from the viewpoint of solubility of the polymer, and aprotic polar solvents are particularly suitable. As an aprotic polar solvent,
N-methyl-2-pyrrolidone, N,N-dimethylformamide, N,N-dimethylacetamide, dimethylsulfoxide, hexamethylphosphorotriamide, γ-butyrolactone, and the like are preferably used. As other additives, a sensitizer, a copolymer monomer, or an adhesion improver with the substrate may be included as long as the sensitivity and heat resistance are not significantly reduced.

Note that if the mixed amount of compound [3] and/or [4] is 0
．． When the amount is in the range of 5 to 5.0% by weight, Mihira ketone, 4,4'-bis(diethylamino)benzophenone, etc. are preferably used as the sensitizer. The actinic radiation sensitivity of the composition of the invention can be further improved by adding a sensitizer. Monomaleimide, polymaleimide, or substituted products thereof are preferably used as the copolymerizable monomer.

Next, a method for using the composition of the present invention will be explained. The compositions of the present invention can be patterned using well-known microfabrication techniques using actinic radiation.

First, the composition of the present invention is coated on a suitable support. Possible coating methods include spin coating using a spinner, spray coating using a spray coater, dipping, printing, and roll coating. The coating film thickness can be adjusted by the coating means, solid content concentration, and viscosity of the composition.

Examples of the material of the support to which the composition of the present invention is applied include metals, glass, semiconductors, metal oxide insulators, and silicon nitride.

In order to improve the adhesion between the coating film of the composition of the present invention or the polyimide film after heat treatment and the support, an adhesion aid may be used as appropriate.

As an adhesion aid, oxypropyltrimethoxysilane,
Organosilicon compounds such as γ-glycidoxypropyltrimethoxysilane, γ-aminopropyltriethoxysilane, γ-methacryloxypropyltrimethoxysilane, aluminum monoethylacetoacetate diisopropylate, aluminum tris (acetylacetonate), etc. Aluminum chelate compounds such as or titanium chelate compounds such as titanium bis(acetylacetonate) are preferably used.

Next, the composition of the present invention, which has become a coating film on the support, is irradiated with actinic radiation in a desired pattern. Examples of actinic radiation include X-rays, electron beams, ultraviolet rays, visible light, etc., but ultraviolet rays and short-wavelength visible rays, that is, in the wavelength range of 200 to 500 nm, are preferred.

Then, a relief pattern is obtained by dissolving and removing the unirradiated areas with a developer. An appropriate developer is selected depending on the structure of the polymer.

The developer contains N-methyl-2-pyrrolidone, N-acetyl-2-pyrrolidone, N,N-dimethylformamide, N,N-dimethylacetamide, dimethylsulfoxide, hexamethylphosphorotriamide, etc., which are the solvents of this composition. It can be used alone or as a mixture with a non-solvent composition such as methanol, ethanol, isopropyl alcohol, water, methylcarpitol, ethylcarpitol, toluene, xylene, or the like. In many cases, ammonia water or other alkaline aqueous solutions can also be used.

Development can be carried out by spraying the above-mentioned developer onto the coated film surface, immersing it in the developer, or applying ultrasonic waves while immersing it.

It is desirable that the relief pattern formed by development is then washed with a rinsing solution.

As the rinsing liquid, methanol, ethanol, isopropyl alcohol, butyl acetate, etc., which have good miscibility with the developer, are preferably used.

The relief pattern polymer obtained by the above treatment is a precursor of a heat-resistant polyimide polymer, and by heat treatment becomes a heat-resistant polymer having an imide ring or other cyclic structure. The heat treatment temperature is 135-400°C. Heat treatment is usually performed while increasing the temperature stepwise or continuously.

The actinic radiation-sensitive polymer composition of the present invention can be applied to passivation films for semiconductors, buffer coat films for passivation films, interlayer insulating films for multilayer integrated circuits, interlayer insulating films and surface protection films for hybrid integrated circuits, and soldering for printed circuits. is used for forming protective films, alignment films for liquid crystals, interlayer insulating films for mounting boards, etc. Furthermore, it can be used as a highly heat-resistant photoresist for metal adhesion and dry etching processes.

It can be applied to other known uses of polyimide.

[Effects of the Invention] As described above, the actinic radiation-sensitive polymer composition of the present invention comprises a polymer having the structural unit [1] as a main component, and an unsaturated bond and an amino group that can be dimerized or polymerized by actinic radiation. or a compound [2] containing a quaternized salt thereof, a coumarin compound [3], and 3.3/, 4, 4/-tetra(t-butylperoxycarbonyl)benzophenone [
4] and a nitrosamine compound, it exhibits excellent photosensitivity, and exhibits high sensitivity not found in conventional polyimides when exposed to the G-line of a high-pressure mercury lamp.

EXAMPLES Next, the present invention will be specifically explained based on Examples, but the present invention is not limited thereto.

The actinic radiation sensitivity of the composition of the present invention was evaluated by applying grayscale (Kodak Company P.
hotogtaphic 5tep tablet N
This was done by irradiating the film with light from a high-pressure mercury lamp through a filter (Y-43 manufactured by Toshiba Glass Co., Ltd.) through a filter (Y-43 manufactured by Toshiba Glass), and then developing the film and examining the film roughness and film loss after development.

Example 1 4.4--diaminodiphenyl sulfide 207.65
9.94 g of g,i,3-bis(3-aminopropyl)tetramethyldisiloxane was dissolved in 1530 g of N-methyl-2-pyrrolidone to prepare an amine solution. Add 213.76 g of pyromellitic anhydride to this amine solution,
The reaction was carried out at 50°C for 3 hours to obtain a polymer solution (A) of 130 poise at 25°C. 370 g of diethylamine ethyl methacrylate was mixed with this polymer solution (A), and then 8.63 g of N-phenyldiethanolamine, 17.25 g of 14-azidobenzalacetophenone, 3.3'
4.4'-tetra(t-butylperoxycarbonyl)
A solution of 17.25 g of benzophenone dissolved in 250 g of N-methyl-2-pyrrolidone was mixed and filtered.

The obtained solution was spin-coated onto a silicon wafer using a spinner, and then dried at 90°C and 95°C for 3 minutes each using a vacuum suction hot plate (Model SCW636, manufactured by Dainippon Screen Co., Ltd.). went. The film thickness of this coating film was 10 μm. Next, this coating film was set in an exposure machine (PLA-501F manufactured by Canon Corporation), and a gray scale (Photographic 5te manufactured by Kodak Corporation) was set.
for 2 minutes through a filter (Y-43 manufactured by Toshiba Glass).

The intensity of the ultraviolet rays at this time is 5mW/cm2 (436nm
)Met. The development was carried out by immersion development using a mixed solvent of N-methylpyrrolidone (70 parts) and xylene (30 parts). The development time starts immediately after the unexposed area dissolves, and then continues for 3 more times.
Development was continued for 0 seconds. Then with isopropanol for 20
Rinse for seconds and spin dry with a spinner. When the film thickness after development was measured, it was 8.0 μm.

(Membrane reduction amount = 2.0μm) After this, 200℃, 350℃
The film was heat-treated for 30 minutes at a time, and the pattern was observed using an optical microscope. It showed a good pattern with no film roughening at an exposure dose of 200 mJ or more.

Example 2 4.4'-diaminodiphenyl ether 1.92°2
9.94 g of 1.3-bis(3-aminopropyl)tetramethyldisiloxane was dissolved in 1890 g of N-methyl-2-pyrrolidone to prepare an amine solution. Add benzophenonetetracarboxylic anhydride 315 to this amine solution.
．． 7g was added and reacted at 50℃ for 3 hours, and then at 25℃
A 50 poise polymer solution (B) was obtained. Add 370 g of diethylaminoethyl methacrylate to this polymer solution (B).
and then N-phenyldiethanolamine8.
63g, 4-azidobenzalacetophenone 17. 2
5g, 3. 3', 4. 4'-tetra(t
-butylperoxycarbonyl)benzophenone17.
A solution of 25 g dissolved in 250 g of N-methyl-2-pyrrolidone was mixed and filtered.

The obtained solution was spin-coated onto a silicon wafer using a spinner, and then dried at 80° C. for 1 hour.

The film thickness of this coating film was 10 μm. Next, this coating film was exposed to light under the same conditions as in Example I, and then immersion development was performed using a mixed solvent of N-methylpyrrolidone (70 parts) and methanol (30 parts). Development was continued for an additional 30 seconds immediately after the unexposed areas were dissolved. It was then rinsed with isopropanol for 20 seconds and spun dry on a spinner.

When the film thickness after development was measured, it was 8.5 μm (film reduction amount = 1°5 μm). After this, at 200℃ and 350℃
The film was heat-treated for 0 minutes at a time, and the pattern was observed using an optical microscope. It showed a good pattern with no film roughening at an exposure dose of 150 mJ or more.

Example 3 207.6 g of 4.4'-diaminodiphenyl sulfide
, 9.94 g of 1.3-bis(3-aminopropyl)tetramethyldisiloxane was mixed with 1 N-methyl-2-pyrrolidone.
890 g to prepare an amine solution. Add 315% of benzophenonetetracarboxylic anhydride to this amine solution.
Add 7g, react at 50°C for 3 hours, and react at 25°C for 13
A polymer solution (C) of 0 poise was obtained. This polymer solution (
C) was mixed with 370 g of diethylaminoethyl methacrylate, and then 10.0 g of N-phenyldiethanolamine was added.
3g, 4-azidobenzalacetophenone 20. 6g
, 3. 3', 4. 20.6 g of 4'-tetra(butylperoxycarbonyl)benzophenone
-A solution dissolved in 300 g of methyl-2-pyrrolidone was mixed and filtered.

From the obtained solution, a film thickness of 10 μm was obtained in the same manner as in Example 1.
After forming a coating film, exposure, development, rinsing and drying were performed under the same conditions. When the film thickness after development was measured, it was 8.
It was 5 μm (film reduction amount: 1.5 μm). After this, 2
The film was heat treated at 00° C. and 350° C. for 30 minutes each, and the pattern was observed using an optical microscope. It showed a good pattern with no film roughening at an exposure dose of 200 mJ or more.

Example 4 370 g of diethylaminoethyl methacrylate was mixed into the same polymer solution (B) used in Example 2, and then 8.63 g of N-phenyldiethanolamine, 4-
8.66 g of azidobenzalacetophenone, 17, 25 g of 3-sulfonyl azidobenzoic acid, 3. 3',
4. 25 g of 4'-tetra(1-butylperoxycarbonyl)benzophenone was dissolved in N-methyl-2-
A solution dissolved in 250 g of pyrrolidone was mixed and filtered.

The obtained solution was spin-coated onto a silicon wafer using a spinner, and then dried at 80° C. for 1 hour.

The film thickness of this coating film was 10 μm. Next, this coating film was exposed, developed, rinsed and dried under the same conditions as in Example 2. When the film thickness after drying was measured, it was 8.7 μm (film reduction: 1.3 μm). After this, 200℃, 3
The film was heat-treated at 50° C. for 30 minutes each, and the pattern was observed using an optical microscope. It showed a good pattern with no film roughening at an exposure dose of 200 mJ or more.

Example 5 370 g of diethylaminoethyl methacrylate was mixed into the same polymer solution (B) used in Example 2, and then 8.63 g of N-phenyldiethanolamine, 3-
17.25 g 13.3' of sulfonyl azide benzoic acid,
4.4'-tetra(1-butylperoxycarbonyl)
A solution of 17.25 g of benzophenone dissolved in 250 g of N-methyl-2-pyrrolidone was mixed and filtered.

The obtained solution was spin-coated onto a silicon wafer using a spinner, and then dried at 80° C. for 1 hour.

The film thickness of this coating film is 10I1. It became m. Next, this coating film was exposed, developed, rinsed and dried under the same conditions as in Example 2. The film thickness after drying was 8.0 μm.
(film reduction amount: 2.0 μm). After this, 200℃
The film was heat-treated at 350° C. for 30 minutes each, and the pattern was observed using an optical microscope. It showed a good pattern with no film roughness at an exposure dose of 250 mJ or more.

Comparative Example 1 370 g of diethylaminoethyl methacrylate was mixed into the same polymer solution (A) used in Example 1, and then 10.3 g of N-phenyldiethanolamine and 4-
A solution of 20.6 g of azidobenzalacetophenone dissolved in 300 g of N-methyl-2-pyrrolidone was mixed and filtered.

A film with a thickness of 10 μm was formed from the obtained solution under the same conditions as in Example 1.
After forming a coating film, exposure, development, rinsing and drying were performed under the same conditions. When the film thickness after drying was measured, 5.
It was 4 μm (film reduction amount: 4.6 μm). After that, 2
Heat treatment was performed at 00° C. and 350° C. for 30 minutes each, and the pattern was observed using an optical microscope, but film roughness occurred even at an exposure dose of 600 mJ.

Comparative Example 2 370 g of diethylaminoethyl methacrylate was mixed with the polymer solution (B) used in Example 2, and then 20.6 g of Michler's ketone was mixed with 25 g of N-methyl-2-pyrrolidone.
The solution was mixed and filtered.

The obtained solution was spin-coated onto a silicon wafer using a spinner, and then dried at 80° C. for 1 hour.

The film thickness of this coating film was 10 μm. Next, when this coating film was exposed to light and subjected to immersion development under the same conditions as in Example 2, the image was dissolved even at an exposure amount of 720 mj (
Film reduction amount: 10.0 μm).

Claims (1)

[Claims] (1) (a) General formula - [CO-R_1-CONH-R_2-NH] - ▲ Numerical formulas, chemical formulas, tables, etc. a valent organic group, R_2 is at least 2
A divalent organic group having more than 1 carbon atoms, R_3 represents hydrogen or an alkali metal counterion. n is 1 or 2
It is. ) and (b) a compound containing an unsaturated bond that can be dimerized or polymerized by actinic radiation and an amino group or a quaternized salt thereof [2] (c) General formula▲ Numerical formula, chemical formula, table, etc.▼ (R_4, R_5 are monovalent organic groups having at least 2 or more carbon atoms, R_6 is 1 having at least 3 or more carbon atoms (d) 3,3',4,4'-tetra(t-butylperoxycarbonyl)benzophenone [4], and (e) nitrosamine. An actinic radiation-sensitive polymer composition comprising compound [5].