JPH0337992A - Manufacture of organic electroluminescence element - Google Patents

Manufacture of organic electroluminescence element

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Publication number
JPH0337992A
JPH0337992A JP1171037A JP17103789A JPH0337992A JP H0337992 A JPH0337992 A JP H0337992A JP 1171037 A JP1171037 A JP 1171037A JP 17103789 A JP17103789 A JP 17103789A JP H0337992 A JPH0337992 A JP H0337992A
Authority
JP
Japan
Prior art keywords
anode
layer
transport layer
electrode
emitting layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1171037A
Other languages
Japanese (ja)
Inventor
Seiichiro Yokoyama
横山 清一郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Idemitsu Kosan Co Ltd
Original Assignee
Idemitsu Kosan Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Idemitsu Kosan Co Ltd filed Critical Idemitsu Kosan Co Ltd
Priority to JP1171037A priority Critical patent/JPH0337992A/en
Publication of JPH0337992A publication Critical patent/JPH0337992A/en
Pending legal-status Critical Current

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  • Electroluminescent Light Sources (AREA)

Abstract

PURPOSE:To enable the efficient manufacture of an organic electroluminnescent element of a large luminous amount and area, and long lifetime with relatively simple operation by forming a luminous layer on the electrode of anode or cathode via a process with power supply in the condition where the film of a luminous layer material is formed. CONSTITUTION:A luminous layer material is dispersed or solubilized in a water soluble media with an interfacial active agent of 10 to 20 HLB. In addition, a luminous layer is formed on the electrode of anode or cathode via the processing of the dispersed or solubilized solution with power supply in the condition where the layer of the luminous layer is generated. According to the aforesaid construction, operation such as alignment is not required in laminating functional thin films on the electrode, and a desired thin film can be efficiently manufactured with relatively simple operation. Also, the obtained organic EL element has a wide contact area and high brightness and efficiency.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は有機エレクトロルミネッセンス素子の製造方法
に関し、詳しくは発光量が多く、応答速度が速く、種々
の表示材料等として有用な有機エレクトロルミネッセン
ス素子の効率のよい製造方法に関する。
[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a method for manufacturing an organic electroluminescent device, and more specifically, an organic electroluminescent device that emits a large amount of light, has a fast response speed, and is useful as a variety of display materials. This invention relates to an efficient manufacturing method.

〔従来の技術及び発明が解決しようとする課題〕エレク
トロルミネッセンス素子(以下EL素子という)は、自
己発光のため視認性が高く、また完全固体素子であるた
め耐衝撃性に優れるという特徴を有しており、現在、無
機、有機化合物を発光層に用いた様々なEL素子が提案
され、実用化が試みられている。このうち、有機薄膜E
L素子は、印加電圧を大幅に低下させることができるた
め、各種材料が開発されつつある。
[Prior art and problems to be solved by the invention] Electroluminescent elements (hereinafter referred to as EL elements) have the characteristics of high visibility due to self-luminescence, and excellent impact resistance because they are completely solid-state elements. Currently, various EL elements using inorganic or organic compounds in the light emitting layer have been proposed, and attempts are being made to put them into practical use. Of these, organic thin film E
Since the L element can significantly reduce the applied voltage, various materials are being developed.

この有機薄膜EL素子としては、陽極/発光層/陰極か
らなる有機EL素子、陽極/正孔注入輸送層/発光層/
陰極からなる有機EL素子、陽極/発光層/電子注入輸
送層/陰極からなる有機EL素子あるいは陽極/正孔注
入輸送層/発光層/電子注入輸送層/陰極からなる有機
EL素子など、電極に発光層及び各種機能を有する薄層
を積層したものが種々開発されている。
This organic thin film EL device includes an organic EL device consisting of an anode/a light emitting layer/a cathode, an anode/a hole injection transport layer/a light emitting layer/
An organic EL device consisting of a cathode, an organic EL device consisting of an anode/emitting layer/electron injecting/transporting layer/cathode, or an organic EL device consisting of anode/hole injecting/transporting layer/emitting layer/electron injecting/transporting layer/cathode, etc. Various types of laminated light emitting layers and thin layers having various functions have been developed.

従来、このような有機EL素子の製造方法としては種々
の積層方法、例えば蒸着法、イオンビーム法、プラズマ
重合法、LB法等を利用した方法が知られている。しか
し、これらの方法では、その工程が複雑であり生産性が
悪いという欠点があった。また、これらの方法で得られ
る有機EL素子は発光量や発光面積が小さいなどの問題
がある。
Conventionally, various lamination methods such as vapor deposition, ion beam, plasma polymerization, LB, etc. are known as methods for manufacturing such organic EL elements. However, these methods have the disadvantage that the steps are complicated and productivity is poor. Furthermore, organic EL devices obtained by these methods have problems such as a small amount of light emission and a small light emitting area.

〔課題を達成するための手段〕[Means to accomplish the task]

そこで本発明者らは、発光量及び発光面積が大きく、ま
た寿命が長い有機EL素子を比較的簡易な操作で効率よ
く製造する方法を開発すべく鋭意研究を重ねた。
Therefore, the present inventors have conducted extensive research in order to develop a method for efficiently manufacturing an organic EL element that has a large amount of light emission, a large light emitting area, and a long life span with relatively simple operations.

その結果、発光層の材料あるいはその他の機能層の材料
を水性媒休体中でHLB(!10〜20の界面活性剤を
用いて得られる分散液あるいは可溶化液を電極上で特定
の条件下で通電処理する方法、所謂ミセル電解法を用い
て発光層等を形成することにより、上記の課題を達成で
きることを見出した。
As a result, a dispersion or solubilization of the material of the light-emitting layer or other functional layer in an aqueous medium using HLB (10 to 20 surfactants) was applied on the electrode under specific conditions. It has been found that the above-mentioned problems can be achieved by forming a light-emitting layer and the like using a method of conducting an electric treatment using a so-called micelle electrolysis method.

本発明はかかる知見に基づいて完成したものである。す
なわち、本発明は陽極/発光層/陰極からなる有機EL
素子を製造するにあたり、発光層材料を水性媒休体中で
HLB値10〜20の界面活性剤にて分散あるいは可溶
化して得た分散液あるいは可溶化溶液を、陽極あるいは
陰極の電極上に前記発光層材料の膜が生成する条件下で
通電処理して発光層を形成することを特徴とする有機E
L素子の製造方法を提供するものである。また、本発明
は陽極/正孔注入輸送層/発光層/陰極からなる有@E
L素子、陽極/発光層/電子注入輸送N/陰極からなる
有機EL素子あるいは陽極/正孔注入輸送層/発光層/
電子注入輸送層/陰極からなる有機EL素子を製造する
にあたって、正孔注入輸送層材料3発光層材料及び電子
注入輸送層材料の少なくとも一層の材料を上記方法と同
様にして分散液あるいは可溶化溶液として、これを通電
処理して所望する機能層を形成して有機EL素子を製造
する方法をも提供するものである。
The present invention was completed based on this knowledge. That is, the present invention is an organic EL device consisting of an anode/emitting layer/cathode.
In manufacturing the device, a dispersion or solubilization solution obtained by dispersing or solubilizing the luminescent layer material in an aqueous medium with a surfactant having an HLB value of 10 to 20 is applied onto the anode or cathode electrode. An organic E, characterized in that a light emitting layer is formed by conducting a current treatment under conditions that produce a film of the light emitting layer material.
A method for manufacturing an L element is provided. Further, the present invention also provides an electrode comprising an anode/a hole injection/transport layer/a light emitting layer/a cathode.
L element, an organic EL element consisting of an anode/emissive layer/electron injection/transport N/cathode or anode/hole injection/transport layer/emissive layer/
In manufacturing an organic EL device consisting of an electron injection transport layer/cathode, at least one of the hole injection transport layer material 3, the light emitting layer material, and the electron injection transport layer material is prepared in a dispersion or solubilized solution in the same manner as above. The present invention also provides a method for manufacturing an organic EL element by subjecting the organic EL element to a current treatment to form a desired functional layer.

本発明はこのように(1)陽極/発光層/陰極からなる
有機EL素子、(2)陽極/正孔注入輸送層/発光層/
陰極からなる有機EL素子、 (3)陽極/発光層/電
子注入輸送層/陰極からなる有機EL素子及び(4)陽
極/正孔注入輸送層/発光層/電子注入輸送層/陰極か
らなる有機EL素子を製造するにあたって、所謂くセル
電解法を利用する方法である。ここで、本発明の方法は
、EL素子を構成する層のうち少なくとも一層を≧セル
電解法にて積層するもので、果セル電解法にて形成しな
い他の層は、他の積層方法、例えばマスキング蒸着法、
イオンビーム法、プラズマ法、スバッタリング法、エツ
チング法、キャスト法、デイツプ法、LB法などを組み
合わせて行うことができる。
The present invention thus provides (1) an organic EL device consisting of an anode/a light-emitting layer/a cathode, (2) an anode/a hole injection/transport layer/a light-emitting layer/
An organic EL device consisting of a cathode, (3) an organic EL device consisting of an anode/emissive layer/electron injecting/transporting layer/cathode, and (4) an organic EL device consisting of an anode/hole injecting/transporting layer/emissive layer/electron injecting/transporting layer/cathode. This is a method that utilizes the so-called cell electrolysis method in manufacturing EL elements. Here, in the method of the present invention, at least one of the layers constituting the EL element is laminated by a cell electrolysis method, and other layers not formed by the cell electrolysis method are laminated by other lamination methods, e.g. masking vapor deposition method,
The ion beam method, plasma method, sputtering method, etching method, casting method, dip method, LB method, etc. can be used in combination.

本発明において用いられる有機EL素子の発光層材料と
しては、発光機能の有機化合物であれば良く、特に制限
はなく、従来公知の化合物の中から任意に選択して用い
ることができる。例えば多環縮合芳香族化合物、ベンゾ
チアゾール系、ペンシイ業ダゾール系、ペンソオキサゾ
ール系などの蛍光増白剤、金属キレート化オキシノイド
化合物、ジスチリルベンゼン系化合物などを用いること
ができる。
The material for the light emitting layer of the organic EL element used in the present invention is not particularly limited as long as it has a light emitting function, and can be arbitrarily selected from conventionally known compounds. For example, polycyclic condensed aromatic compounds, fluorescent brighteners such as benzothiazole type, pencil dazole type, and pensoxazole type, metal chelated oxinoid compounds, distyrylbenzene type compounds, etc. can be used.

前記多環縮合芳香族化合物としては、例えばアントラセ
ン、アントラキノン、ナフタレン、フェナンスレン。ピ
レン、クリセン、ペリレン骨格を含む縮合環発光物質や
、約8個の縮合環を含む他の縮合環発光物質などを挙げ
ることができる。また前記各県の蛍光増白剤としては、
例えば特開昭59−194393号公報に記載のものを
用いることができ、その代表例としては、2,5−ビス
(5,7−ジーt−ペンチル−2−ベンゾオキサシリル
)−1,3,4−チアジアゾール;4,4”−ビス(5
,7−t−ペンチル−2−ベンゾオキサシリル)スチル
ベン;4,4°−ビス〔5,7−ジー(2−メチル−2
−ブチル)−2−ベンゾオキサシリル〕スチルベン;2
,5−ビス(5゜7−ジーt−ペンチル−2−ベンゾオ
キサシリル)チオフェン;2.5−ビス〔5−(α、α
−ジメチルベンジル)−2−ベンゾオキサシリルコチオ
フェン:2,5−ビス〔5,7−ジー(2−メチル−2
−ブチル)−2−ベンゾオキサゾール〕−3,4−ジフ
ェニルチオフェン;2,5−ビス(5−メチル−2−ベ
ンゾオキサシリル)チオフェン;4,4”−ビス−(2
−ベンゾオキサシリル)ビフェニル;5−メチル−2−
(2−(4−(5−メチル−2−ベンゾオキサシリル)
フヱニル〕ビニル〕ベンゾオキサゾール;2−(2−(
4−クロロフェニル)ビニル〕ナツト(1,2−d)オ
キサゾールなどのベンゾオキサゾール系、2.2“−(
p−フェニレンジビニレン)−ビスベンゾチアゾールな
どのベンゾチアゾール系、2−(2−(4−(2−ベン
ゾイミダゾリル)フェニル〕ビニル〕ベンシイ逅タソー
ル; 2− (2−(4−カルボキシフェニル)ビニル
〕ベンシイごダゾールなどのベンゾイミダゾール系など
の蛍光増白剤が挙げられる。
Examples of the polycyclic fused aromatic compound include anthracene, anthraquinone, naphthalene, and phenanthrene. Examples include fused ring luminescent substances containing pyrene, chrysene, and perylene skeletons, and other fused ring luminescent substances containing about 8 fused rings. In addition, the fluorescent whitening agents in each prefecture are as follows:
For example, those described in JP-A-59-194393 can be used, and a representative example thereof is 2,5-bis(5,7-di-t-pentyl-2-benzoxasilyl)-1,3 ,4-thiadiazole; 4,4”-bis(5
,7-t-pentyl-2-benzoxasilyl)stilbene; 4,4°-bis[5,7-di(2-methyl-2
-butyl)-2-benzoxasilyl]stilbene; 2
,5-bis(5゜7-di-t-pentyl-2-benzoxasilyl)thiophene; 2,5-bis[5-(α,α
-dimethylbenzyl)-2-benzoxasilylcothiophene: 2,5-bis[5,7-di(2-methyl-2
-butyl)-2-benzoxazole]-3,4-diphenylthiophene; 2,5-bis(5-methyl-2-benzoxasilyl)thiophene; 4,4''-bis-(2
-Benzoxacylyl)biphenyl; 5-methyl-2-
(2-(4-(5-methyl-2-benzoxasilyl)
2-(2-(
Benzoxazole series such as [4-chlorophenyl)vinyl]nut(1,2-d)oxazole, 2.2"-(
Benzothiazole series such as p-phenylene divinylene)-bisbenzothiazole; Examples include fluorescent brighteners such as benzimidazole-based brighteners such as benzigodazole.

また前記金属キレート化オキサノイド化合物としては、
例えば特開昭63−295695号公報記載のものを用
いることができる。その代表例としては、トリス(8−
キノリノール)アルミニウム、ビス(8−キノリノール
)マグネシウム、ビス(ベンゾ(f)−8−キノリノー
ル)亜鉛、ビス(2−メチル−8−キノリノラード)ア
ル旦ニウムオキシド、トリス(8−キノリノール)イン
ジウム1 トリス(5−メチル−8−キノリノール)ア
ルミニウム、8−キノリノールリチウム、トリス(5−
クロロ−8−キノリノール)ガリウム。
Further, the metal chelated oxanoid compound includes:
For example, those described in JP-A-63-295695 can be used. A typical example is tris (8-
quinolinol)aluminum, bis(8-quinolinol)magnesium, bis(benzo(f)-8-quinolinol)zinc, bis(2-methyl-8-quinolinolado)aldanium oxide, tris(8-quinolinol)indium 1 tris( 5-methyl-8-quinolinol) aluminum, 8-quinolinol lithium, tris(5-
chloro-8-quinolinol) gallium.

ビス(5−クロロ−8−キノリノール)カルシウム、 
ホlJ C亜鉛([)−ビス(8−ヒドロキシ−5−キ
ノリノニル)メタンコなどの8−ヒドロキシキノリン系
金属錯体やジリチウムエビンドリジオンなどが挙げられ
る。
bis(5-chloro-8-quinolinol)calcium,
Examples include 8-hydroxyquinoline metal complexes such as HolJC zinc([)-bis(8-hydroxy-5-quinolinonyl)methaneco, dilithium evindridione, and the like.

また、前記ジスチリルベンゼン系化合物としては、例え
ば特願平1−29681号明細書に記載のものを用いる
ことができる。明細書記載の1゜4−ビス(アルキルス
チリル)ベンゼン誘導体としては各種のものがあるが、
例えば次のものをあげることができる。
Further, as the distyrylbenzene compound, for example, those described in Japanese Patent Application No. 1-29681 can be used. There are various 1°4-bis(alkylstyryl)benzene derivatives described in the specification, but
For example, the following can be given:

本発明の有機EL素子における発光層は、上記の材料か
ら適宜選定して用いればよいが、二種類以上を併用する
こともできる。
The light-emitting layer in the organic EL device of the present invention may be appropriately selected from the above-mentioned materials, but two or more types can also be used in combination.

また、発光層は、電極の間に一層だけ存在させてもよく
、あるいは別の材料の発光層を積層してもよい。さらに
、目的とする素子に応じて、電極と発光層の間に正孔注
入輸送層及び/又は電子注入輸送層とを介在させること
も有効である。また、各1!能層は、−層からなるもの
でも、また複数の層からなるものでもよい。
Furthermore, only one light-emitting layer may be present between the electrodes, or light-emitting layers made of different materials may be laminated. Furthermore, depending on the intended device, it is also effective to interpose a hole injection transport layer and/or an electron injection transport layer between the electrode and the light emitting layer. Also, 1 each! The functional layer may consist of one layer or a plurality of layers.

このように、各機能層の積層構造とすることにより、発
光層だけの単層型のものより発光強度を大幅に向上させ
ることができる。
In this way, by forming a laminated structure of each functional layer, the luminescence intensity can be significantly improved compared to a single-layer structure having only a light-emitting layer.

本発明の有機EL素子としては、(1)陽極/発光層/
陰極、(2)陽極/正孔注入輸送層/発光層/陰極、(
3)陽極/正孔注入輸送層/発光層/電子注入輸送層/
陰極あるいは(4)陽極/発光層/電子注入輸送N/陰
極をこの順序で積層した各態様のものをあげることがで
きる。
The organic EL device of the present invention includes (1) anode/light emitting layer/
Cathode, (2) Anode/Hole injection transport layer/Light emitting layer/Cathode, (
3) Anode/hole injection transport layer/light emitting layer/electron injection transport layer/
Examples include cathode or (4) anode/luminous layer/electron injection/transport N/cathode laminated in this order.

正孔注入輸送層を陽極と発光層との間に挾むことにより
、より低い電界で多くの正孔が発光層に注入される。積
層される正孔注入輸送層の材料としては、陽極より注入
された正孔を発光層に伝達する機能を有する層を形成す
る正孔伝達化合物であれば、特に制限なく使用できる。
By sandwiching the hole injection transport layer between the anode and the light emitting layer, many holes are injected into the light emitting layer with a lower electric field. The material for the hole injection and transport layer to be laminated can be used without any particular limitation as long as it is a hole transport compound that forms a layer having the function of transmitting holes injected from the anode to the light emitting layer.

ここで好ましい正孔伝達化合物は、104〜106ボル
ト/cvaの電場を与えられた電極間に層が配置された
場合、少なくとも10−’afl/ボルト・秒の正孔移
動度をもつ。従って好ましい例としては、光導電材料に
おいて正孔の電荷輸送材として用いられている各種化合
物があげられる。
Preferred hole transport compounds herein have hole mobilities of at least 10-'afl/volt-second when the layer is placed between electrodes subjected to an electric field of 104-106 volts/cva. Therefore, preferred examples include various compounds used as hole charge transport materials in photoconductive materials.

このような電荷輸送材として以下のような例があげられ
る。
Examples of such charge transport materials include the following.

■米国特許第3112197号明細書等に記載されてい
るトリアゾール誘導体、 ■米国特許第3189447号明細書等に記載されてい
るオキサジアゾール誘導体、 ■特公昭37−16096号公報等に記載されているイ
ミダゾール誘導体、 ■米国特許第3615402号、同3820989号、
同3542544号明細書や特公昭45−555号、同
51−10983号公報さらには特開昭51−9322
4号、同55−17105号。
■Triazole derivatives described in U.S. Patent No. 3112197, etc.; ■Oxadiazole derivatives described in U.S. Patent No. 3189447, etc.; ■Triazole derivatives described in U.S. Patent No. 37-16096, etc. Imidazole derivatives, ■U.S. Patent No. 3615402, U.S. Patent No. 3820989,
3542544, Japanese Patent Publication No. 45-555, Japanese Patent Publication No. 51-10983, and Japanese Patent Publication No. 51-9322.
No. 4, No. 55-17105.

同56−4148号、同55−108667号1同55
−156−953号、同56−36656号公報等に記
載されているボリアリールアルカン誘導体、 ■米国特許第3180729号、同4278746号明
細書や特開昭55−88064号、同55−88065
号、同49−105537号、同55−51086号、
同56−80051号、同56−88141号、同57
−45545号、同54−112637号、同55−7
4546号公報等に記載されているピラゾリン誘導体お
よびピラゾロン誘導体、 ■米国特許第3615404号明細書や特公昭51−1
0105号、同46−3712号、同47−25336
号公報さらには特開昭54−53435号、同54−1
10536号、同54−119925号公報等に記載さ
れているフェニレンジアミン誘導体、 ■米国特許第3567450号、同3180703号、
同3240597号、同3658520号。
No. 56-4148, No. 55-108667, No. 1 No. 55
Boaryl alkane derivatives described in U.S. Pat.
No. 49-105537, No. 55-51086,
No. 56-80051, No. 56-88141, No. 57
-45545, 54-112637, 55-7
Pyrazoline derivatives and pyrazolone derivatives described in Japanese Patent Publication No. 4546, ■U.S. Pat.
No. 0105, No. 46-3712, No. 47-25336
Publication No. 54-53435, JP-A No. 54-1
10536, US Pat. No. 54-119925, etc.; ■ US Pat. No. 3,567,450, US Pat.
No. 3240597, No. 3658520.

同4232103号、同4175961号、同4012
376号明細書や特公昭49−35702号、同39−
27577号公報さらには特開昭55−144250号
、同56−119132号。
No. 4232103, No. 4175961, No. 4012
Specification No. 376, Japanese Patent Publication No. 49-35702, No. 39-
No. 27577, as well as Japanese Patent Application Laid-open Nos. 55-144250 and 56-119132.

同56−22437号公報、西独特許第11105号明
細書等に記載されているアリールアミン誘導体、 ■米国特許第3526501号明細書等に記載されてい
るアミノ置換カルコン誘導体、 ■米国特許第3257203号明細書等に記載されてい
るオキサゾール誘導体、 [相]特開昭56−46234号公報等に記載されてい
るスチリルアントラセン誘導体、 ■特開昭54−110837号公報等に記載されている
フルオレノン誘導体、 ■米国特許第3717462号明細書や特開昭54−5
9143号、同55−52063号、同55−5206
4号、同55−46760号、同55−85495号、
同57−11350号、同57−148749号公報等
に記載されているヒドラゾン誘導体、 ■特開昭61−210363号、同6l−22845L
号、同61−14642号、同61−72255号、同
62−47646号、同62−36674号、同62−
10652号、陽62−30255号、同60−934
45号、同60−94462号、同60−174749
号、同60−175052号公報等に記載されているス
チルベン誘導体などを列挙することができる。
56-22437, West German Patent No. 11105, etc.; ■Amino-substituted chalcone derivatives described in U.S. Pat. No. 3,526,501, etc.; ■U.S. Pat. No. 3,257,203. [Phase]Styrylanthracene derivatives described in JP-A No. 56-46234, etc.; ■Fluorenone derivatives described in JP-A-54-110837, etc.; U.S. Patent No. 3,717,462 and JP-A-54-54
No. 9143, No. 55-52063, No. 55-5206
No. 4, No. 55-46760, No. 55-85495,
Hydrazone derivatives described in JP-A No. 57-11350, JP-A No. 57-148749, etc., ■JP-A No. 61-210363, JP-A No. 61-22845L
No. 61-14642, No. 61-72255, No. 62-47646, No. 62-36674, No. 62-
No. 10652, No. 62-30255, No. 60-934
No. 45, No. 60-94462, No. 60-174749
Examples include stilbene derivatives described in No. 60-175052 and the like.

さらに特に好ましい例としては、特開昭63−2956
95号公報に開示されているホール輸送層としての化合
物(芳香族三級アミン)や正孔注入帯としての化合物(
ポルフィリン化合物)をあげることができる。
A particularly preferable example is JP-A-63-2956
A compound (aromatic tertiary amine) as a hole transport layer and a compound as a hole injection zone (
porphyrin compounds).

さらに特に正孔伝達化合物として好ましい例は、特開昭
53−27033号公報、同54−58445号公報、
同54−149634号公報。
Particularly preferable examples of the hole transfer compound include JP-A No. 53-27033, JP-A No. 54-58445,
Publication No. 54-149634.

同54−64299号公報、同55−79450号公報
、同55−144250号公報、同56−119132
号公報、同61−295558号公報、同61−983
53号公報及び米国特許第4127412号明細書等に
開示されているものである。それらの例を示せば次の如
くである。
No. 54-64299, No. 55-79450, No. 55-144250, No. 56-119132
No. 61-295558, No. 61-983
This is disclosed in Japanese Patent No. 53, US Pat. No. 4,127,412, and the like. Examples of these are as follows.

旧し し1013 本発明の正孔注入輸送層はこれらの化合物を1種または
2種以上から成る一層で構成されてもよいし、あるいは
別種の化合物からなる他の正孔注入輸送層を積層したも
のであってもよい。
Old Shishi 1013 The hole injection transport layer of the present invention may be composed of a single layer consisting of one or more of these compounds, or may be formed by laminating other hole injection transport layers comprising different kinds of compounds. It may be something.

一方、本発明では、電子注入輸送層を陰極と発光層との
間に挟むことにより、より低い電界で多くの電子が発光
層に注入される。電子注入輸送層の材料としては、電子
伝達化合物から威るものであって、陰極より注入された
電子を発光層にする機能を有するものである。このよう
な材料としては上記の如き機能を有する薄膜を形成しう
るものであれば、特に制限なく使用することができる。
On the other hand, in the present invention, by sandwiching the electron injection transport layer between the cathode and the light emitting layer, many electrons are injected into the light emitting layer with a lower electric field. The material for the electron injection and transport layer is an electron transfer compound, which has the function of converting electrons injected from the cathode into a light emitting layer. As such a material, any material can be used without particular limitation as long as it can form a thin film having the above-mentioned functions.

具体的には次のようなものがあげられる。Specifically, the following can be mentioned.

などのニトロ置換フルオレノン誘導体、■特開昭57−
149259号、同58−5545C号、同63−10
4061号公報等に記載されているアントラキノジメタ
ン誘導体、 ■Polymer Preprints、 Japan
 Vol、 31+ Na5(1988) 、 p、6
81等に記載されているなどのジフェニルキノン誘導体
、 などのチオピランジオ キシド誘導体、 ■J、 J、 APPl、 Phys、、 27. L
 269(1988)等に記載されている で表わされる化合物、 ■特開昭60−69657号、同61−14376号、
同61−148159号公報等に記載されているフレオ
レニリデンメタン誘導体、 ■特開昭61−225151号、同61−233750
号公報等に記載されているアントラキノジメタン誘導体
及びアントロン誘導体などをあげることができる。
Nitro-substituted fluorenone derivatives such as
No. 149259, No. 58-5545C, No. 63-10
Anthraquinodimethane derivatives described in Publication No. 4061 etc., ■Polymer Preprints, Japan
Vol, 31+ Na5 (1988), p, 6
Diphenylquinone derivatives such as those described in 81 etc., thiopyrane dioxide derivatives such as ■J, J, APPl, Phys, 27. L
269 (1988) etc., ■JP-A No. 60-69657, No. 61-14376,
Fleolenylidene methane derivatives described in JP-A No. 61-148159, etc.;
Examples thereof include anthraquinodimethane derivatives and anthrone derivatives, which are described in Japanese Patent Publication No.

■日本学術振興会、光電相互変換第125委員会第12
9回研究会にて九州大学安達らの講演により開示された で表わされる化合物、 本発明の方法では、上記の如き材料を用いて、所請電セ
ル電解法、即ちこれらの材料を水性媒休体中でHLB値
10〜20の界面活性にて分散あるいは可溶化して得た
分散液あるいは可溶化溶液を、電極(陽極又は陰極)上
に前記材料の膜(薄膜)が生成する条件下で通電処理す
る方法を行うことにより、効率よく薄膜の層を形成する
ことができる。
■Japan Society for the Promotion of Science, 125th Committee on Photoelectric Interconversion, No. 12
In the method of the present invention, the above-mentioned materials are used in the electric cell electrolysis method, that is, these materials are treated in an aqueous medium. A dispersion or solubilization solution obtained by dispersing or solubilizing in the body with a surface active substance having an HLB value of 10 to 20 is prepared under conditions such that a film (thin film) of the material is formed on the electrode (anode or cathode). A thin film layer can be formed efficiently by carrying out a method of energization treatment.

このような有機EL素子は通常基板上に形成される。本
発明の有機EL素子において使用される基板は、透明性
を有するものが好ましく、一般にガラス、透明プラスチ
ック、石英等が充当される。
Such organic EL elements are usually formed on a substrate. The substrate used in the organic EL device of the present invention is preferably transparent, and glass, transparent plastic, quartz, etc. are generally used.

また、電極(陽極、陰極)としては次の如きものが好ま
しい。陽極としては仕事関数の大きい即ち、4eV以上
の金属1合金、電気伝導性化合物及びこれらの混合物を
電極物質とするものが好ましく用いられる。このような
電極物質の具体例としては、Auなどの金属、Cur、
ITO。
Further, the following electrodes (anode, cathode) are preferable. As the anode, an electrode material having a large work function, that is, 4 eV or more, is preferably a metal 1 alloy, an electrically conductive compound, or a mixture thereof. Specific examples of such electrode materials include metals such as Au, Cur,
I.T.O.

SnO□、ZnOなどの導電性透明材料、導電性ポリマ
ー、酸化物導電体が挙げられる。該陽極は、これらの電
極物質を蒸着あるいはスパッタリングなどの方法により
、薄膜を形成させることにより作製することができる。
Examples include conductive transparent materials such as SnO□ and ZnO, conductive polymers, and oxide conductors. The anode can be produced by forming a thin film of these electrode materials by a method such as vapor deposition or sputtering.

この際、公知の方法例えばマスクを用いた方法あるいは
レジストを用いたエツチング法等により電極をパターン
加工できる。
At this time, the electrode can be patterned by a known method, such as a method using a mask or an etching method using a resist.

この電極より発光を取り出す場合には、透過率を10%
より大きくすることが望ましく、また電極としてのシー
ト抵抗は数百Ω/ cd以下が好ましい。
When emitting light from this electrode, reduce the transmittance to 10%.
It is desirable to make it larger, and the sheet resistance as an electrode is preferably several hundred Ω/cd or less.

さらに膜厚は材料にもよるが、通常10〜200nmの
範囲で選択される。
Furthermore, although the film thickness depends on the material, it is usually selected in the range of 10 to 200 nm.

一方、陰極としては仕事関数の小さい即ち、4eV以下
の金属2合金、電気伝導性化合物及びこれらの混合物を
電極物質とするものが好ましく用いられる。このような
電極物質の具体例としては、Na、Na−に合金、Mg
、Li、Mg/Cu混合物、 A l / A I O
z、  I nなどが挙げられる。
On the other hand, as the cathode, it is preferable to use a metal 2 alloy having a small work function, that is, 4 eV or less, an electrically conductive compound, or a mixture thereof as an electrode material. Specific examples of such electrode materials include Na, Na alloy, Mg
, Li, Mg/Cu mixture, A l / A I O
Examples include z, I n, etc.

該陰極は、これらの電極物質を蒸着あるいはスパッタリ
ングなどの方法により、薄膜を形成させることにより作
製することができる。前記のような公知のマスク法、エ
ツチング法によりパターン加工できる。また電極として
シート抵抗は数百Ω/d以下が好ましい、さらに膜厚は
通常10nmないし1μm、好ましくは50〜200n
mの範囲で選ばれる。なお、本発明の素子においては該
陽極または陰極のいずれか一方が透明または半透明であ
ることが発光を透過し、取り出す効率がよいので好まし
い。
The cathode can be manufactured by forming a thin film of these electrode materials by a method such as vapor deposition or sputtering. Pattern processing can be performed using the well-known mask method and etching method as described above. In addition, the sheet resistance of the electrode is preferably several hundred Ω/d or less, and the film thickness is usually 10 nm to 1 μm, preferably 50 to 200 nm.
selected within the range of m. In the device of the present invention, it is preferable that either the anode or the cathode be transparent or semi-transparent, since this allows light to be transmitted and extracted efficiently.

本発明の方法では、まず上述の如き基板上に上記の方法
にて電極(陽極または陰極)をバターニングして形成し
、このものの上に所望の薄層、即ち発光層、正孔注入輸
送層あるいは電子注入輸送層の少なくとも一層を、所謂
ミセル電解法にて積層し、さらに電極、基板上の電極が
陽極の場合は陰極、基板上の電極が陰極の場合は陽極を
形成する。
In the method of the present invention, an electrode (anode or cathode) is first patterned and formed on the substrate as described above by the method described above, and then a desired thin layer, such as a light-emitting layer and a hole injection transport layer, is formed on the substrate. Alternatively, at least one electron injection transport layer is laminated by a so-called micelle electrolysis method, and further an electrode and a cathode are formed when the electrode on the substrate is an anode, and an anode is formed when the electrode on the substrate is a cathode.

この積層にあたり、該積層材料、具体的には上記発光層
、正孔注入輸送層あるいは電子注入輸送層の材料を1種
あるいは必要により2種以上を水性媒休体中でHLB値
10〜20の界面活性剤にて分散あるいは可溶化して分
散液あるいは可溶化溶液を得る。ここで水性媒体として
は水をはじめ、水とアルコールの混合物、水とアセトン
の混合液など様々な媒体を挙げることができる。
In this lamination, the laminated materials, specifically, one or more materials of the above-mentioned light emitting layer, hole injection transport layer, or electron injection transport layer, are mixed in an aqueous medium with an HLB value of 10 to 20. Disperse or solubilize with a surfactant to obtain a dispersion or solubilized solution. Here, the aqueous medium includes various media such as water, a mixture of water and alcohol, and a mixture of water and acetone.

一方、本発明の方法では、界面活性剤として、HLB値
10〜20、好ましくは12〜18の界面活性剤を用い
る。このような界面活性剤の好適例をあげれば、ポリオ
キシエチレンアルキルエーテル、ポリオキシエチレン脂
肪酸エステル、ポリオキシエチレンアルキルフェニルエ
ーテル、ポリオキシエチレンポリオキシプロピレンアル
キルエーテルなどの非イオン系界面活性剤をあげること
ができる。そのほか、アルキル硫酸塩、ポリオキシエチ
レンアルキルエーテル硫酸塩、塩化アルキルトリメチル
アンモニウム、脂肪酸ジエチルアξノエチルアξドなど
を使用することも可能である。
On the other hand, in the method of the present invention, a surfactant having an HLB value of 10 to 20, preferably 12 to 18 is used as the surfactant. Suitable examples of such surfactants include nonionic surfactants such as polyoxyethylene alkyl ether, polyoxyethylene fatty acid ester, polyoxyethylene alkylphenyl ether, and polyoxyethylene polyoxypropylene alkyl ether. be able to. In addition, it is also possible to use alkyl sulfates, polyoxyethylene alkyl ether sulfates, alkyltrimethylammonium chlorides, fatty acid diethylaminoethyladides, and the like.

さらに、界面活性剤の好ましい例として次の如きフェロ
セン誘導体が挙げられる。すなわち一般式〔式中、R1
及びR2はそれぞれ炭素数6以下のアルキル基、炭素数
6以下のアルコキシ基、アミノ基、ジメチルアミ)基、
水酸基、アセチルア逅ノ基、カルボキシル基、メトキシ
カルボニル基、アセトキシ基、アルデヒド基あるいはハ
ロゲンを示し、R3は水素又は炭素数4〜18の直鎖あ
るいは分岐アルキル基又はアルケニル基を示し、R4及
びR5はそれぞれ水素又はメチル基を示す。Yは酸素あ
るいはオキシカルボニル基を示し、aは0〜4の整数、
bはO〜4の整数9mは1〜18の整数、nは2.0〜
70.0の実数を示す。〕 で表わされるフェロセン誘導体を代表的なものとしてあ
げることができる。ここで、一般式(1)中の各記号は
前述した通りである。つまり、国際公開WO38107
538,WO39101939゜特願昭63−2337
97号、その他に記載される如く、R1及びR−はそれ
ぞれ炭素数6以下のアルキル基(メチル基(CH3)、
エチル基(Ct Hs)等)、アルコキシ基(メトキシ
基(OCH3)、エトキシ基(OCzHs)等)、アも
ノ基(N)(り。
Further, preferred examples of surfactants include the following ferrocene derivatives. That is, the general formula [wherein, R1
and R2 are each an alkyl group having 6 or less carbon atoms, an alkoxy group having 6 or less carbon atoms, an amino group, a dimethylami) group,
It represents a hydroxyl group, an acetyl group, a carboxyl group, a methoxycarbonyl group, an acetoxy group, an aldehyde group, or a halogen, R3 represents hydrogen or a linear or branched alkyl group or alkenyl group having 4 to 18 carbon atoms, and R4 and R5 represent Each represents hydrogen or methyl group. Y represents oxygen or oxycarbonyl group, a is an integer of 0 to 4,
b is an integer from O to 4; m is an integer from 1 to 18; n is from 2.0 to
Indicates a real number of 70.0. ] The ferrocene derivative represented by the following can be mentioned as a typical example. Here, each symbol in general formula (1) is as described above. In other words, International Publication WO38107
538, WO39101939゜Patent Application No. 63-2337
As described in No. 97 and others, R1 and R- each represent an alkyl group having 6 or less carbon atoms (methyl group (CH3),
Ethyl group (Ct Hs), etc.), alkoxy group (methoxy group (OCH3), ethoxy group (OCzHs), etc.), amino group (N) (Ri.

ジメチルアミノ基 (N(CHi)z))、水酸基(O
H)。
dimethylamino group (N(CHi)z)), hydroxyl group (O
H).

アセチルアミノ基(NHCOCH,)、カルボキシル基
(COOH)、アセトキシ基(OCOC)13)。
Acetylamino group (NHCOCH), carboxyl group (COOH), acetoxy group (OCOC) 13).

メトキシカルボニル基(COOCR3)、アルデヒド基
(CHO)あるいはハロゲン(塩素、臭素。
Methoxycarbonyl group (COOCR3), aldehyde group (CHO) or halogen (chlorine, bromine).

フッ素、沃素等)を示す、RI及びRzは同一であって
も異なってもよく、さらにR1及びRtがそれぞれ複数
個フェロセンの五員環に存在した場合にも、複数の置換
基がそれぞれ同一であっても異なっていてもよい。また
、R3は水素又は炭素数4〜18の直鎖あるいは分岐ア
ルキル基またはアルケニル基を示している。
RI and Rz, which represent fluorine, iodine, etc., may be the same or different, and even if a plurality of R1 and Rt each exist in the five-membered ring of ferrocene, the plurality of substituents are the same. It may be different or different. Further, R3 represents hydrogen or a straight chain or branched alkyl group or alkenyl group having 4 to 18 carbon atoms.

さらにYは酸素(−0−)又はオキシカルボニル基(−
C−O−)を示し、R’、RSは水素又1 はメチル基(CH3)を示す。従って、−0(CHIC
H,0)、lH。
Furthermore, Y is oxygen (-0-) or oxycarbonyl group (-
C-O-), R' and RS are hydrogen or 1 is a methyl group (CH3). Therefore, −0(CHIC
H, 0), lH.

−C−0(CH,CH,○)nHあるいは1 等である。-C-0(CH,CH,○)nH or 1 etc.

またmは1〜18の整数を示す。従って、環員炭素原子
と上記酸素又はオキシカルボニル基との間に、エチレン
基、プロピレン基等の炭素数1〜18のアルキ゛レン基
が介在したものとなる。さらにnは上記オキシエチレン
基などのオキシアルキレン基の繰り返し数を示すもので
、2.0〜70.0の整数のみならず、これらを含む実
数を意味し、オキシアルキレン基などの繰り返し数の平
均値を示すものである。
Moreover, m represents an integer of 1 to 18. Therefore, an alkylene group having 1 to 18 carbon atoms, such as an ethylene group or a propylene group, is interposed between the ring carbon atom and the oxygen or oxycarbonyl group. Furthermore, n indicates the repeating number of the oxyalkylene group such as the above-mentioned oxyethylene group, and means not only an integer from 2.0 to 70.0 but also a real number including these, and the average number of repeating groups such as the oxyalkylene group. It indicates the value.

本発明の方法で用いるフェロセン誘導体は、上記一般式
(1)で表わされるもののほかに、様々なものがあり、
アンモニウムタイプ、ピリジンタイプ(国際公開WO3
B107538等)をはじめ、特願昭63−23379
7号明細書、同63−233798号明細書、同63−
248600号明細書、同63−248601号明細書
、特願平1−45370号明細書、同1−54956号
明細書、同1−70680号明細書、同1−70681
号明細書、同1−76498号明細書および同1−76
499号明細書に記載されたフェロセン誘導体を挙げる
ことができる。
There are various ferrocene derivatives used in the method of the present invention in addition to those represented by the above general formula (1),
Ammonium type, pyridine type (International Publication WO3
B107538 etc.), patent application No. 63-23379
Specification No. 7, Specification No. 63-233798, Specification No. 63-
248600, 63-248601, Japanese Patent Application No. 1-45370, 1-54956, 1-70680, 1-70681
Specification of No. 1-76498 and No. 1-76
Mention may be made of the ferrocene derivatives described in No. 499.

このなかで特に次に挙げるフェロセン誘導体が好適に使
用される。
Among these, the following ferrocene derivatives are particularly preferably used.

上記の如きフェロセン誘導体は極めて効率良く水性媒体
に、所望の機能層の材料を分散あるいは可溶化すること
ができるものである。
The above-mentioned ferrocene derivatives can disperse or solubilize the desired functional layer material in an aqueous medium very efficiently.

本発明の方法では、まず水性媒休体中に上記の界面活性
剤および所望の機能層の材料を入れて、超音波、ホモジ
ナイザーあるいは撹拌機等により、1時間〜7日間程度
充分に攪拌させる。この操作で機能層材料は、HLB値
10〜2oを有する界面活性剤の作用で、水性媒休体中
に均一に分散あるいは可溶化して、分散液あるいはξセ
ル溶液となる0本発明の方法では、このようにして得た
均一分散液あるいは果セル溶液に、所望に応じて支持塩
を加えて、また状況に応じて過剰の機能層材料を遠心分
離、デカンテーション、静止沈降等にて除去し、得られ
た電解液を静置したままあるいは若干の撹拌を加えなが
ら通電処理する。また、通電処理中に機能層材料を電解
液に補充添加してもよく、あるいは電解液の一部を系外
へ抜き出し、抜き出した電解液に機能層材料を加えて充
分に混合撹拌し、しかる後にこの液を系内へ戻す循環回
路を併設してもよい。
In the method of the present invention, first, the above-mentioned surfactant and materials for the desired functional layer are placed in an aqueous medium and thoroughly stirred for about 1 hour to 7 days using an ultrasonic wave, a homogenizer, a stirrer, or the like. In this operation, the functional layer material is uniformly dispersed or solubilized in the aqueous medium by the action of the surfactant having an HLB value of 10 to 2o, and becomes a dispersion liquid or a ξ cell solution. Now, add a supporting salt as desired to the homogeneous dispersion or fruit cell solution obtained in this way, and remove excess functional layer material by centrifugation, decantation, static sedimentation, etc. depending on the situation. Then, the obtained electrolytic solution is subjected to energization treatment while being left standing or with slight stirring. In addition, the functional layer material may be added to the electrolytic solution during the energization process, or a part of the electrolytic solution may be extracted from the system, and the functional layer material is added to the extracted electrolytic solution and thoroughly mixed and stirred. A circulation circuit for later returning this liquid to the system may also be provided.

この際の機能層材料の濃度は飽和濃度以上であればよい
、また界面活性剤の濃度は、特に制限はないが、通常は
10μM〜0.1 M、好ましくは0.5mM〜5mM
の範囲で選定する。また、支持塩(支持電解質)は、水
性媒体の電気伝導度を調節するために必要に応じて加え
るものである。この支持塩の添加量は、可溶化あるいは
分散している機能層材料の析出を妨げない範囲であれば
よく、通常は上記界面活性剤の0〜300倍程度の濃度
、好ましくは10〜200倍程度の濃度を目安とする。
The concentration of the functional layer material at this time may be at least the saturation concentration, and the concentration of the surfactant is not particularly limited, but is usually 10 μM to 0.1 M, preferably 0.5 mM to 5 mM.
Select within the range. Further, a supporting salt (supporting electrolyte) is added as necessary to adjust the electrical conductivity of the aqueous medium. The amount of supporting salt added may be within a range that does not interfere with the solubilization or precipitation of the dispersed functional layer material, and is usually at a concentration of about 0 to 300 times that of the surfactant, preferably 10 to 200 times. As a guideline, the concentration should be approximately

この支持塩を加えずに通電を行うこともできるが、この
場合支持塩を含まない純度の高い薄膜が得られる。また
、支持塩を用いる場合、その支持塩の種類は、可溶化の
進行や電極への前記疎水性物質の析出を妨げることなく
、水性媒体の電気伝導度を調節しうるちのであれば特に
制限はない。
Although it is also possible to conduct current application without adding this supporting salt, in this case a highly pure thin film containing no supporting salt can be obtained. In addition, when using a supporting salt, the type of supporting salt is particularly limited as long as it can adjust the electrical conductivity of the aqueous medium without hindering the progress of solubilization or precipitation of the hydrophobic substance on the electrode. There isn't.

具体的には、−船釣に広く支持塩として用いられている
硫酸塩(リチウム、カリウム、ナトリウム、ルビジウム
、アルミニウムなどの塩)、酢酸塩(リチウム、カリウ
ム、ナトリウム、ルビジウム、ベリリウム、マグネシウ
ム、カルシウム、ストロンチウム、バリウム、アルミニ
ウムなどの塩)。
Specifically, - Sulfates (salts of lithium, potassium, sodium, rubidium, aluminum, etc.) and acetates (lithium, potassium, sodium, rubidium, beryllium, magnesium, calcium, etc.) are widely used as supporting salts in boat fishing. , strontium, barium, aluminum, etc.).

ハロゲン化物塩(リチウム、カリウム、ナトリウム、ル
ビジウム、カルシウム、マグネシウム、アルミニウムな
どの塩)、水溶性酸化物塩(リチウム、カリウム、ナト
リウム、ルビジウム、カルシウム、マグネシウム、アル
ミニウムなどの塩)が好適である。
Halide salts (salts of lithium, potassium, sodium, rubidium, calcium, magnesium, aluminum, etc.) and water-soluble oxide salts (salts of lithium, potassium, sodium, rubidium, calcium, magnesium, aluminum, etc.) are suitable.

本発明の方法における通電条件は、使用している電極、
即ち陽極あるいは陰極上、正孔注入輸送層上9発光層上
あるいは電子注入輸送層上に前記機能層材料の薄膜が生
成する条件下に設定すればよい。ここで通電条件は、状
況に応じて様々に異なるが、具体的には液温を室温〜8
0″C1陽極あるいは陰極上に前記機能層材料の薄膜が
生成する条件とは、状況に応じて様々に異なるが、具体
的には液温を室温〜70°C1好ましくは20〜60℃
、通電時間を1分〜2時間として、定電位あるいは定電
流にて通電処理することとなる。この定電位での通電処
理にあたっては、両極間を0.5〜10.OV、好まし
くは3.0〜0.5Vの電位に設定し、また、定電流で
の通電処理にあたっては、電流密度を1 u A/Cl
11〜100 mA/cd、好ましくは100 u A
/c4〜10 mA/dの範囲に設定すればよい。
The energization conditions in the method of the present invention include the electrodes used,
That is, the conditions may be set such that a thin film of the functional layer material is formed on the anode or cathode, on the hole injection transport layer, on the light emitting layer, or on the electron injection transport layer. Here, the energization conditions vary depending on the situation, but specifically, the liquid temperature is set at room temperature to 8.
The conditions for forming a thin film of the functional layer material on the anode or cathode vary depending on the situation, but specifically the liquid temperature is room temperature to 70°C, preferably 20 to 60°C.
The energization process is performed at a constant potential or constant current, with the energization time being 1 minute to 2 hours. In this constant potential energization process, the distance between the two electrodes is 0.5 to 10. OV, preferably set to a potential of 3.0 to 0.5 V, and in the constant current energization process, the current density is set to 1 u A/Cl.
11-100 mA/cd, preferably 100 uA
/c may be set in the range of 4 to 10 mA/d.

本発明の方法で得られた薄膜には、さらに必要に応じて
、通電洗浄、溶媒洗浄、150〜350°Cでのベーキ
ング処理等の後処理を行うことも有効である。
It is also effective to further perform post-treatments on the thin film obtained by the method of the present invention, such as electrical cleaning, solvent cleaning, and baking treatment at 150 to 350°C, if necessary.

このようにして得られた正孔注入輸送層2発光層あるい
は電子注入輸送層の上にさらにもう一方の電極を従来公
知の方法で形成して、有機EL素子を得ることができる
An organic EL device can be obtained by forming another electrode on the hole injection transport layer 2 light emitting layer or electron injection transport layer thus obtained by a conventionally known method.

本発明の方法によれば、種々の有機EL素子を製造する
ことができる。例えば、(1)基板上に電極(陽極ある
いは陰極)を種々の方法にて形成し、この上に上記ミセ
ル電解法にて発光層を積層し、さらに対電極を形成した
有機EL素子、(2)基板上に電極を種々の方法にて形
成し、この上に上記ミセル電解法あるいは他の方法にて
正孔注入輸送層を積層し、さらにミセル電解法あるいは
他の方法にて発光層を積層しく但し、正孔注入輸送層1
発光層の少なくとも一層はミセル電解法で形成)、その
上に陰極を形成した有機EL素子、(3)基板上に電極
を種々の方法にて形成し、この上に上記ミセル電解法あ
るいは他の方法にて発光層を積層し、さらにミセル電解
法あるいは他の方法にて電子注入輸送層を積層しく但し
、発光層、電子注入輸送層の少なくとも一層はミセル電
解法で形成)、その上に対電極を形成した有機EL素子
、(4)基板上に電極を種々の方法にて形成し、この上
に上記ミセル電解法あるいは他の方法にて、正孔注入輸
送層1発光層をこの順に積層し、さらにミセル電解法あ
るいは他の方法にて電子注入輸送層を積層しく但し、正
孔注入輸送層9発光層および電子注入輸送層の少なくと
も一層はミセル電解法で形成)、その上に対電極を形成
した有機EL素子などが挙げられる。また、ここで積層
の順序は常に基板の側からのみでなく、対向電極の側か
ら積層して、所望する有機EL素子を形成することもで
きる。
According to the method of the present invention, various organic EL devices can be manufactured. For example, (1) an organic EL element in which an electrode (anode or cathode) is formed on a substrate by various methods, a light-emitting layer is laminated thereon by the above-mentioned micelle electrolysis method, and a counter electrode is further formed; ) An electrode is formed on the substrate by various methods, a hole injection transport layer is laminated thereon by the above-mentioned micelle electrolysis method or another method, and a light emitting layer is further laminated by the micelle electrolysis method or another method. However, hole injection transport layer 1
(3) an organic EL element in which at least one of the light-emitting layers is formed by the micelle electrolysis method) and a cathode formed thereon; (3) an electrode is formed on the substrate by various methods; (However, at least one layer of the emissive layer and the electron injection transport layer is formed by the micelle electrolysis method), and then an electron injection transport layer is laminated by a micelle electrolysis method or another method. Organic EL element with electrodes formed, (4) electrodes are formed on the substrate by various methods, and a hole injection transport layer 1 and a light emitting layer are laminated in this order on top of the electrodes by the above-mentioned micelle electrolysis method or other methods. However, an electron injection transport layer is further laminated by a micelle electrolysis method or another method. An example is an organic EL element formed with a . Further, the order of lamination here is not always from the substrate side, but also from the counter electrode side, so that a desired organic EL element can be formed.

〔実施例〕〔Example〕

次に実施例及び比較例により本発明をさらに詳細に説明
する。
Next, the present invention will be explained in more detail with reference to Examples and Comparative Examples.

実施例1 膜厚120nmのITO透明電極が設けられているガラ
ス基板(25X75X1.1閣サイズ。
Example 1 A glass substrate (25 x 75 x 1.1 cabinet size) provided with an ITO transparent electrode with a film thickness of 120 nm.

HOYA社製)を透明支持基板とし、これをイソプロピ
ルアルコールで30分間超音波洗浄し、さらにイソプロ
ピルアルコールに浸漬して洗浄した。
(manufactured by HOYA Corporation) was used as a transparent support substrate, which was ultrasonically cleaned with isopropyl alcohol for 30 minutes, and further immersed in isopropyl alcohol for cleaning.

N、N’−ジフェニル−N、 N’−ジ(3−メチルフ
ェニル)−4,4°−ジアミノビフェニル(TPO)2
00gを2mMのFPEG水溶液に加え、超音波で10
分間分散した後、スターラーで3日間撹拌した。その後
、LiBrを加え、100mMの濃度とし、上記基板を
浸漬して陽極とし、対極に白金板を設け、0.5vで3
0分間電解した。通電量は、0.03クーロン(C)で
あった。
N,N'-diphenyl-N,N'-di(3-methylphenyl)-4,4°-diaminobiphenyl (TPO)2
Add 00g to 2mM FPEG aqueous solution and 10g with ultrasound.
After dispersing for a minute, the mixture was stirred with a stirrer for 3 days. After that, LiBr was added to make the concentration 100mM, the above substrate was immersed to serve as an anode, a platinum plate was provided as a counter electrode, and 3
Electrolyzed for 0 minutes. The amount of current applied was 0.03 coulombs (C).

こうして、膜厚1100nの正孔注入輸送層が形成され
た。さらに、クマリン30の入ったモリブデン製抵抗ボ
ートを真空蒸着装置に入れ、通電し、235°Cまで加
熱し、蒸着速度0.5〜0.7nm/secで、前記正
孔注入輸送層の上に蒸着して、膜厚1100nの発光層
を設けた。なお、蒸着時の該基板の温度は室温であった
In this way, a hole injection transport layer with a thickness of 1100 nm was formed. Furthermore, a molybdenum resistance boat containing Coumarin 30 was placed in a vacuum evaporation apparatus, and heated to 235°C with electricity applied to the hole injection transport layer at a evaporation rate of 0.5 to 0.7 nm/sec. A light emitting layer having a thickness of 1100 nm was provided by vapor deposition. Note that the temperature of the substrate during vapor deposition was room temperature.

蒸着後、真空槽をあけ、発光層の上にステンレス鋼製の
マスクを設置し、モリブテン製の抵抗加熱ボートにマグ
ネシウムを3g入れ、電子ビーム蒸着装置のるつぼに銅
を入れた。この後、再び真空槽を3 X 10−’Pa
まで減圧し、マグネシウム入りのボートに通電し蒸着速
度4〜5nm/secでマグネシウムを蒸着した。この
とき同時に電子ビームにより銅を加熱し、蒸着速度0.
1〜0.3nm/secで銅を蒸着し前記マグネシウム
に銅を混合し、Mg:Cu対向電極とした。以上により
目的とするEL素子の作製を終えた。
After the vapor deposition, the vacuum chamber was opened, a stainless steel mask was placed on the light emitting layer, 3 g of magnesium was placed in a resistance heating boat made of molybdenum, and copper was placed in a crucible of an electron beam evaporator. After this, the vacuum chamber was heated again to 3 x 10-'Pa.
The pressure was reduced to 100.degree. C., and the boat containing magnesium was energized to deposit magnesium at a deposition rate of 4 to 5 nm/sec. At the same time, the copper is heated by an electron beam, and the evaporation rate is 0.
Copper was evaporated at a rate of 1 to 0.3 nm/sec, and copper was mixed with the magnesium to form a Mg:Cu counter electrode. Through the above steps, the production of the intended EL element was completed.

この素子のITO電極を正極、Mg:Cuから威る対向
電極を負極として、直流15Vを印加したところ、電流
密度32mA/c4の電流が流れ、緑色の発光を得た。
When a direct current of 15 V was applied using the ITO electrode of this device as the positive electrode and the counter electrode made of Mg:Cu as the negative electrode, a current with a current density of 32 mA/c4 flowed and green light was emitted.

この際の発光極大波長は508nm、発光輝度は500
cd/rrf、発光効率は0.331m/Wであった。
The maximum emission wavelength at this time is 508 nm, and the emission brightness is 500 nm.
cd/rrf and luminous efficiency were 0.331 m/W.

なお、クマリン30は3− (2’−N−メチルベンズ
イごダゾリル)−7−N、N−ジエチルアミノクマリン
で、次の構造を有している。
Incidentally, Coumarin 30 is 3-(2'-N-methylbenzigodazolyl)-7-N,N-diethylaminocoumarin and has the following structure.

tHs  H3 実施例2 実施例1で用いたITO透明電極と同様のIT0透明電
極に、実施例1と同様の操作でTPDを製膜し、TPD
/ITO電極を得た。膜厚は95nmであった。
tHs H3 Example 2 TPD was formed into a film on an IT0 transparent electrode similar to the ITO transparent electrode used in Example 1 in the same manner as in Example 1.
/ITO electrode was obtained. The film thickness was 95 nm.

クマリン30を200mgと2mMのFPEGPE法に
加え、超音波で10分間分散した後、スターラーで3時
間攪拌した。その後、LiBrを加えて、100mMの
濃度とし、上記TPD/ITO電極を浸漬して陽極とし
、対極に白金を設け、0.5■で30分間電解した。通
電量は0.03Gであった。この結果クマリン30/J
PD/ITOを得た。
Coumarin 30 (200 mg and 2 mM) was added to the FPEGPE method, dispersed with ultrasound for 10 minutes, and then stirred with a stirrer for 3 hours. Thereafter, LiBr was added to give a concentration of 100 mM, the above TPD/ITO electrode was immersed to serve as an anode, platinum was provided as a counter electrode, and electrolysis was carried out at 0.5 μm for 30 minutes. The amount of current applied was 0.03G. As a result, Coumarin 30/J
PD/ITO was obtained.

蒸着後、真空槽をあけ、発光層の上にステンレス鋼製の
マスクを設置し、モリブテン製の抵抗加熱ボートにマグ
ネシウムを3g入れ、電子ビーム蒸着装置のるつぼに銅
を入れた。この後、再び真空槽を3 X 10−’Pa
まで減圧し、マグネシウム入りのボートに通電し蒸着速
度4〜5nm/secでマグネシウムを蒸着した。この
とき同時に電子ビームにより銅を加熱し、蒸着速度0.
1〜0.3nm/seeで銅を蒸着し前記マグネシウム
に銅を混合し、Mg:Cu対向電極とした。以上により
目的とするEL素子の作製を終えた。
After the vapor deposition, the vacuum chamber was opened, a stainless steel mask was placed on the light emitting layer, 3 g of magnesium was placed in a resistance heating boat made of molybdenum, and copper was placed in a crucible of an electron beam evaporator. After this, the vacuum chamber was heated again to 3 x 10-'Pa.
The pressure was reduced to 100.degree. C., and the boat containing magnesium was energized to deposit magnesium at a deposition rate of 4 to 5 nm/sec. At the same time, the copper is heated by an electron beam, and the evaporation rate is 0.
Copper was evaporated at a rate of 1 to 0.3 nm/see, and copper was mixed with the magnesium to form a Mg:Cu counter electrode. Through the above steps, the production of the intended EL element was completed.

この素子のITO電極を正極、Mg:Cuから威る対向
電極を負極として、直流15Vを印加したところ、電流
密度21mA/c+fiの電流が流れ、緑色の発光を得
た。この際の発光極大波長は510nm、発光輝度は8
30cd/rrr、発光効率は1.46fm/Wであっ
た。
When a direct current of 15 V was applied using the ITO electrode of this device as the positive electrode and the counter electrode made of Mg:Cu as the negative electrode, a current with a current density of 21 mA/c+fi flowed and green light was emitted. The maximum emission wavelength at this time was 510 nm, and the emission brightness was 8
The luminous efficiency was 1.46 fm/W.

実施例3 テトラフェニルブタジェン(TPB)200■を2mM
のFPEGPE法に加え、超音波で10分間分散させた
後、スターラーで3日間攪拌した。
Example 3 200 μM of tetraphenylbutadiene (TPB)
In addition to the FPEGPE method described above, the material was dispersed with ultrasonic waves for 10 minutes, and then stirred with a stirrer for 3 days.

その後、LiBrを加え100mMの濃度とし、実施例
1で用いたITO基板を浸漬して陽極とし、対極に白金
を設け、0,5Vで300分間電解した。
Thereafter, LiBr was added to give a concentration of 100 mM, the ITO substrate used in Example 1 was immersed to serve as an anode, platinum was provided as a counter electrode, and electrolysis was performed at 0.5 V for 300 minutes.

通電量は、0.3Cであった。この結果、TPB/IT
Oを得た。
The amount of current applied was 0.3C. As a result, TPB/IT
I got an O.

次に、真空槽をあけ、該発光層の上にステンレス鋼製の
マスクを設置し、一方、電子ビーム加熱の蒸着用るつぼ
にAlを入れ、再び真空槽を3×10−’Paまで減圧
したのち、電子ビームによりAI!、を加熱して、1〜
1.5 n m/ secの蒸着速度で、lを蒸着して
、膜厚150nmのAlから成る対向電極とすることに
より、目的とするEL素子を作製した。
Next, the vacuum chamber was opened, a stainless steel mask was placed on top of the luminescent layer, and Al was placed in an electron beam-heated evaporation crucible, and the pressure of the vacuum chamber was reduced to 3 × 10-'Pa again. Later, with an electron beam, AI! , by heating 1~
The intended EL device was fabricated by depositing 1 at a deposition rate of 1.5 nm/sec to form a counter electrode made of Al with a thickness of 150 nm.

この素子のITO電極を正極、Al2から成る対向電極
を負極として、直流40Vを印加したところ、電流密度
37mA/c111の電流が流れ、青色の発光を得た。
When a direct current of 40 V was applied using the ITO electrode of this device as the positive electrode and the counter electrode made of Al2 as the negative electrode, a current with a current density of 37 mA/c111 flowed and blue light was emitted.

この際の発光極大波長は420nm、発光輝度は1cd
/rdであった。
The maximum emission wavelength at this time is 420 nm, and the emission brightness is 1 cd.
/rd.

実施例4 実施例1で用いたIT○透明電極と同様の透明電極を、
IMのピロールと0.1 MのLiBrを溶解した溶液
に浸漬して陽極とし、対極に白金を設け、1.5■の電
位で3分間電解重合して、ピロール/ITO電極を得た
。このとき流れた電流は35μA/cfltであった。
Example 4 A transparent electrode similar to the IT○ transparent electrode used in Example 1 was
The anode was immersed in a solution of IM pyrrole and 0.1 M LiBr, platinum was provided as a counter electrode, and electropolymerization was carried out at a potential of 1.5 μ for 3 minutes to obtain a pyrrole/ITO electrode. The current flowing at this time was 35 μA/cflt.

次に、ペリレン100■と2mMのFPEGの溶液を超
音波で10分間分散させた後、スターラーで3日間攪拌
した。その後、LiBrを加え100mMの濃度とし、
これに上記ピロール/■To電極を浸漬して陽極とし、
対極に白金を設け、0.5vで30分間電解した。通電
量は0.03Cであった。この結果、ペリレン/ポリピ
ロール/IToを得た。
Next, a solution of 100 μm of perylene and 2 mM FPEG was dispersed by ultrasonic waves for 10 minutes, and then stirred with a stirrer for 3 days. Then, add LiBr to a concentration of 100mM,
The above pyrrole/■To electrode is immersed in this to serve as an anode,
Platinum was provided as a counter electrode, and electrolysis was performed at 0.5V for 30 minutes. The amount of current applied was 0.03C. As a result, perylene/polypyrrole/ITo was obtained.

蒸着後、真空槽をあけ、発光層の上にステンレス鋼製の
マスクを設置し、モリブテン製の抵抗加熱ボートにマグ
ネシウムを3g入れ、電子ビーム蒸着装置のるつぼに銅
を入れた。この後、再び真空槽を3 X 10−’Pa
まで減圧し、マグネシウム入りのボートに通電し蒸着速
度4〜5nm/secでマグネシウムを蒸着した。この
とき同時に電子ビームにより銅を加熱し、蒸着速度0.
1〜0.3nm/secで銅を蒸着し前記マグネシウム
に銅を混合し、Mg:Cu対向電極とした。以上により
目的とするEL素子の作製を終えた。
After the vapor deposition, the vacuum chamber was opened, a stainless steel mask was placed on the light emitting layer, 3 g of magnesium was placed in a resistance heating boat made of molybdenum, and copper was placed in a crucible of an electron beam evaporator. After this, the vacuum chamber was heated again to 3 x 10-'Pa.
The pressure was reduced to 100.degree. C., and the boat containing magnesium was energized to deposit magnesium at a deposition rate of 4 to 5 nm/sec. At the same time, the copper is heated by an electron beam, and the evaporation rate is 0.
Copper was evaporated at a rate of 1 to 0.3 nm/sec, and copper was mixed with the magnesium to form a Mg:Cu counter electrode. Through the above steps, the production of the intended EL element was completed.

この素子のITO電極を正極、Mg:Cuから成る対向
電極を負極として、直流13Vを印加したところ、電流
密度46mA/cnlの電流が流れ、緑味黄色の発光を
得た。この際の発光極大波長は560nm、発光輝度は
240cd/n(、発光効率は0.131 m/Wであ
った。
When a direct current of 13 V was applied using the ITO electrode of this device as the positive electrode and the counter electrode made of Mg:Cu as the negative electrode, a current with a current density of 46 mA/cnl flowed, and greenish-yellow light emission was obtained. The maximum emission wavelength at this time was 560 nm, the emission brightness was 240 cd/n (and the emission efficiency was 0.131 m/W).

比較例I ITOが付いているガラス基板(25mmX75mmX
1.lnmサイズ、HOYA社製)を透明支持基板とし
、これをイソプロピルアルコールで30分超音波洗浄し
、さらにイソプロピルアルコールに浸漬して洗浄したこ
の透明基板を乾燥窒素ガスで乾燥し、真空蒸着装置の基
板ホルダーに固定し、モリブデン製の抵抗加熱ボートに
N、N’−ジフェニル−N、N″−ビス(3−メチルフ
ェニル)−1,1’−ビフェニル−4,4゛−シアミン
(TPD)を200■入れ、さらに別のモリブデン製の
抵抗加熱ボートにクマリン30を200■入れ真空蒸着
装置に取付けた。
Comparative Example I Glass substrate with ITO (25mm x 75mm x
1. 1 nm size, manufactured by HOYA Corporation) was used as a transparent support substrate, and this was ultrasonically cleaned with isopropyl alcohol for 30 minutes, and then this transparent substrate, which had been immersed in isopropyl alcohol and cleaned, was dried with dry nitrogen gas and used as a substrate for vacuum evaporation equipment. Fix it in a holder and add 200 g of N,N'-diphenyl-N,N''-bis(3-methylphenyl)-1,1'-biphenyl-4,4''-cyamine (TPD) to a resistance heating boat made of molybdenum. Then, 200 μm of Coumarin 30 was placed in another resistance heating boat made of molybdenum and attached to a vacuum evaporation device.

その後、真空槽を2 X 10−’Paまで減圧し、T
PDの入った前記ボートに通電し220°Cまで加熱し
、蒸着速度0.1〜0.3nm/秒で透明支持基板上に
蒸着し、膜厚100 nmの正孔注入層(正孔注入輸送
層)とした。さらにクマリン30の入った前記ボートを
通電し、235℃まで加熱し蒸着速度0.5〜0.7n
m/秒で透明支持基板上の正孔注入層の上に蒸着し膜厚
1100nの発光層を得た。このとき基板の温度は室温
であった。
Thereafter, the pressure in the vacuum chamber was reduced to 2 × 10-'Pa, and T
The boat containing the PD was heated to 220°C by applying electricity, and was deposited on a transparent support substrate at a deposition rate of 0.1 to 0.3 nm/sec to form a hole injection layer (hole injection transport) with a thickness of 100 nm. layer). Furthermore, the boat containing Coumarin 30 was energized and heated to 235°C at a deposition rate of 0.5 to 0.7n.
The film was deposited on the hole injection layer on the transparent support substrate at a rate of m/sec to obtain a light emitting layer with a thickness of 1100 nm. At this time, the temperature of the substrate was room temperature.

蒸着後、真空槽を開け、発光層の上にステンレス鋼製の
マスクを設置し、モリブデン製の抵抗加熱ボートにマグ
ネシウムを3g入れ、電子ビーム蒸着装置のるつぼに銅
を入れた。その後、再度真空槽を3 X 10−’Pa
まで減圧しマグネシウム入れのボードに通電し、蒸着速
度4〜5 n m 7秒でマグネシウムを蒸着した。こ
のとき、同時に電子ビームにより銅を加熱し、0.2〜
0.3nm/秒で銅を蒸着して前記マグネシウムに銅を
混合し、対向電極とした0以上によりEL素子の作製を
終えた。
After vapor deposition, the vacuum chamber was opened, a stainless steel mask was placed on the light emitting layer, 3 g of magnesium was placed in a resistance heating boat made of molybdenum, and copper was placed in a crucible of an electron beam evaporator. After that, open the vacuum chamber again to 3 x 10-'Pa.
The pressure was reduced to 100%, and electricity was applied to the board containing magnesium to deposit magnesium at a deposition rate of 4 to 5 nm for 7 seconds. At this time, the copper is heated by an electron beam at the same time, and the
Copper was evaporated at a rate of 0.3 nm/sec, copper was mixed with the magnesium, and the EL element was fabricated using 0 or more as a counter electrode.

この素子のITO電極を陽極、マグネシウムと銅の混合
物よりなる対向電極を負極として、直流20Vを印加し
たところ電流密度が87mA/c++1の電流が流れ、
緑色の発光を得た。
When 20 V DC was applied to this device using the ITO electrode as the anode and the counter electrode made of a mixture of magnesium and copper as the negative electrode, a current with a current density of 87 mA/c++1 flowed.
A green luminescence was obtained.

このときの発光極大波長は510nm、発光体半値幅は
60nm、発光輝度は440cd/ボであった。
At this time, the maximum emission wavelength was 510 nm, the half width of the light emitter was 60 nm, and the emission brightness was 440 cd/bo.

〔発明の効果〕〔Effect of the invention〕

以上の如く、本発明の方法によれば、電極上に機能を有
する薄膜を積層するにあたり、位置あわせなどの操作を
必要とせず比較的簡易な操作で所望の薄膜を効率良く製
造することができる。また得られた有機EL素子は、接
触面積が広く、高輝度、高効率である。
As described above, according to the method of the present invention, when laminating a functional thin film on an electrode, a desired thin film can be efficiently manufactured with relatively simple operations without requiring operations such as alignment. . Moreover, the obtained organic EL device has a large contact area, high brightness, and high efficiency.

したがって、本発明の方法は、表示材料、プリンタ、液
晶バックライトなどに用いられる有機EL素子の製造に
有効に利用される。
Therefore, the method of the present invention can be effectively used for manufacturing organic EL elements used in display materials, printers, liquid crystal backlights, and the like.

Claims (5)

【特許請求の範囲】[Claims] (1)陽極/発光層/陰極からなる有機エレクトロルミ
ネッセンス素子を製造するにあたり、発光層材料を水性
媒体中でHLB値10〜20の界面活性剤にて分散ある
いは可溶化して得た分散液あるいは可溶化溶液を、陽極
あるいは陰極の電極上に前記発光層材料の膜が生成する
条件下で通電処理して発光層を形成することを特徴とす
る有機エレクトロルミネッセンス素子の製造方法。
(1) When producing an organic electroluminescent device consisting of an anode/emissive layer/cathode, a dispersion or 1. A method for manufacturing an organic electroluminescent device, which comprises forming a light-emitting layer by applying electricity to a solubilized solution under conditions such that a film of the light-emitting layer material is formed on an anode or a cathode.
(2)陽極/正孔注入輸送層/発光層/陰極からなる有
機エレクトロルミネッセンス素子を製造するにあたり、
正孔注入輸送層材料及び/又は発光層材料を水性媒体中
でHLB値10〜20の界面活性剤にて分散あるいは可
溶化して得た分散液あるいは可溶化溶液を、陽極あるい
は陰極の電極上に前記材料の膜が生成する条件下で通電
処理して正孔注入輸送層及び/又は発光層を形成するこ
とを特徴とする有機エレクトロルミネッセンス素子の製
造方法。
(2) In manufacturing an organic electroluminescent device consisting of an anode/hole injection/transport layer/light emitting layer/cathode,
A dispersion or solubilized solution obtained by dispersing or solubilizing the hole injection transport layer material and/or the light emitting layer material in an aqueous medium with a surfactant having an HLB value of 10 to 20 is applied to the anode or cathode electrode. A method for manufacturing an organic electroluminescent device, which comprises forming a hole injection transport layer and/or a light emitting layer by applying current under conditions that produce a film of the material.
(3)陽極/発光層/電子注入輸送層/陰極からなる有
機エレクトロルミネッセンス素子を製造するにあたり、
発光層材料及び/又は電子注入輸送層材料を水性媒体中
でHLB値10〜20の界面活性剤にて分散あるいは可
溶化して得た分散液あるいは可溶化溶液を、陽極あるい
は陰極の電極上に前記材料の膜が生成する条件下で通電
処理して発光層及び/又は電子注入輸送層を形成するこ
とを特徴とする有機エレクトロルミネッセンス素子の製
造方法。
(3) In manufacturing an organic electroluminescent device consisting of an anode/emitting layer/electron injection/transport layer/cathode,
A dispersion or solubilization solution obtained by dispersing or solubilizing the light emitting layer material and/or the electron injection transport layer material in an aqueous medium with a surfactant having an HLB value of 10 to 20 is applied onto the anode or cathode electrode. A method for manufacturing an organic electroluminescent device, characterized in that a light emitting layer and/or an electron injection transport layer is formed by applying electricity under conditions that produce a film of the material.
(4)陽極/正孔注入輸送層/発光層/電子注入輸送層
/陰極からなる有機エレクトロルミネッセンス素子を製
造するにあたり、正孔注入輸送層材料,発光層材料及び
電子注入輸送層材料の少なくとも一層の材料を水性媒休
体中でHLB値10〜20の界面活性剤にて分散あるい
は可溶化して得た分散液あるいは可溶化溶液を、陽極あ
るいは陰極の電極上に前記材料の膜が生成する条件下で
通電処理して正孔注入輸送層,発光層及び電子注入輸送
層の少なくとも一層を形成することを特徴とする有機エ
レクトロルミネッセンス素子の製造方法。
(4) In manufacturing an organic electroluminescent device consisting of an anode/hole injection/transport layer/emissive layer/electron injection/transport layer/cathode, at least one layer of hole injection/transport layer material, emissive layer material, and electron injection/transport layer material is used. A film of the material is formed on the anode or cathode electrode by dispersing or solubilizing the material in an aqueous medium with a surfactant having an HLB value of 10 to 20. 1. A method for manufacturing an organic electroluminescent device, which comprises forming at least one of a hole injection transport layer, a light emitting layer, and an electron injection transport layer by applying current under certain conditions.
(5)界面活性剤がフェロセン誘導体である請求項1〜
4のいずれかに記載の製造方法。
(5) Claims 1 to 3, wherein the surfactant is a ferrocene derivative.
4. The manufacturing method according to any one of 4.
JP1171037A 1989-07-04 1989-07-04 Manufacture of organic electroluminescence element Pending JPH0337992A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1171037A JPH0337992A (en) 1989-07-04 1989-07-04 Manufacture of organic electroluminescence element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1171037A JPH0337992A (en) 1989-07-04 1989-07-04 Manufacture of organic electroluminescence element

Publications (1)

Publication Number Publication Date
JPH0337992A true JPH0337992A (en) 1991-02-19

Family

ID=15915921

Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Status (1)

Country Link
JP (1) JPH0337992A (en)

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Cited By (139)

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Publication number Priority date Publication date Assignee Title
US6207301B1 (en) 1996-08-21 2001-03-27 Sumitomo Chemical Company, Limited Polymer fluorescent substance and organic electroluminescence device
EP2277979A1 (en) 1999-04-09 2011-01-26 Sumitomo Chemical Company, Limited Polymeric fluorescent substance and polymer light emitting device
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EP2033979A1 (en) 2001-12-19 2009-03-11 Sumitomo Chemical Company, Limited Copolymer or polymer composition and polymer light-emitting device
US7714328B2 (en) 2001-12-27 2010-05-11 Seiko Epson Corporation Apparatus and method for manufacturing electro-optical devices
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JP2003197881A (en) * 2001-12-27 2003-07-11 Seiko Epson Corp Semiconductor integrated circuit, manufacturing method for the semiconductor integrated circuit, semiconductor element member, electrooptic device, and electronic equipment
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EP2107076A1 (en) 2002-03-15 2009-10-07 Sumitomo Chemical Company, Limited Conjugated polymer comprising dibenzothiophene- or dibenzofuran-units and their use in polymer LEDs
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US7529102B2 (en) 2002-03-20 2009-05-05 Seiko Epson Corporation Wiring substrate, electronic device, electro-optical device, and electronic apparatus
US7148508B2 (en) 2002-03-20 2006-12-12 Seiko Epson Corporation Wiring substrate, electronic device, electro-optical device, and electronic apparatus
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US7122845B2 (en) 2002-07-23 2006-10-17 Seiko Epson Corporation Light-emitting device, method of manufacturing the same, and electronic apparatus
EP2325226A1 (en) 2002-10-30 2011-05-25 Sumitomo Chemical Company, Limited Complex aryl copolymer compounds and polymer light emitting devices made by using the same
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US7425375B2 (en) 2003-03-28 2008-09-16 Tdk Corporation Organic EL element and organic EL display
US7132789B2 (en) 2003-08-18 2006-11-07 Seiko Epson Corporation Organic EL device, method of manufacturing the same and electronic apparatus
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US7754274B2 (en) 2003-11-17 2010-07-13 Seiko Epson Corporation Mask and method for manufacturing the same, method for manufacturing display, method for manufacturing organic electroluminescent display, organic electroluminescent device, and electronic device
US7280933B2 (en) 2004-01-15 2007-10-09 Seiko Epson Corporation Method and apparatus for forming a pattern, device and electronic apparatus
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US7679082B2 (en) 2004-11-10 2010-03-16 Qidan Ling Multi-functional copolymers comprising rare earth metal complexes and devices thereof
EP2960299A1 (en) 2005-05-20 2015-12-30 Sumitomo Chemical Co., Ltd. Polymer composition and polymer light-emitting device using the same
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DE112006002147T5 (en) 2005-08-12 2008-10-23 Sumitomo Chemical Co., Ltd. Polymer compound and polymeric light-emitting device using these
DE112006002668T5 (en) 2005-10-07 2008-08-14 Sumitomo Chemical Company, Ltd. Copolymer and polymeric light-emitting device using the same
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DE112006003090T5 (en) 2005-11-11 2008-09-25 Sumitomo Chemical Co. Ltd. Conjugated polymer compound and polymeric light-emitting device using them
DE112006002998T5 (en) 2005-11-18 2008-09-18 Sumitomo Chemical Co., Ltd. Polymer compound and polymer-containing light-emitting device using the same
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JP2007165231A (en) * 2005-12-16 2007-06-28 Konica Minolta Holdings Inc Coating dispersion liquid for organic electroluminescent element, nonaqueous coating dispersion liquid for organic electroluminescent element, organic electroluminescent element, display device, and lighting system
DE112006003570T5 (en) 2005-12-28 2008-11-06 Sumitomo Chemical Co., Ltd. block copolymer
DE112007000169T5 (en) 2006-01-16 2008-11-27 Sumitomo Chemical Co. Ltd. Polymer compound and polymer-based light-emitting device using the same
DE112007000426T5 (en) 2006-02-22 2009-01-02 Sumation Co. Ltd. Metal complex, polymer compound and device containing it
DE112007001294T5 (en) 2006-05-31 2009-04-23 Sumitomo Chemical Co., Ltd. Polymer compound and polymeric light-emitting device
WO2008016091A1 (en) 2006-07-31 2008-02-07 Sumitomo Chemical Company, Limited Polymer compound and polymer light-emitting device using the same
WO2008016067A1 (en) 2006-08-01 2008-02-07 Sumitomo Chemical Company, Limited Polymer compound and polymer light-emitting device
WO2008026649A1 (en) 2006-08-30 2008-03-06 Sumitomo Chemical Company, Limited Organic electroluminescence element
WO2008032720A1 (en) 2006-09-13 2008-03-20 Sumitomo Chemical Company, Limited Polymer compound and polymer light-emitting device
WO2008032843A1 (en) 2006-09-14 2008-03-20 Sumitomo Chemical Company, Limited Organic electroluminescent device
WO2008038747A1 (en) 2006-09-25 2008-04-03 Sumitomo Chemical Company, Limited Polymer compound and polymer light-emitting device using the same
WO2008093821A1 (en) 2007-02-02 2008-08-07 Sumitomo Chemical Company, Limited Polymer light-emitting device, polymer compound, composition, liquid composition, and conductive thin film
EP2471833A1 (en) 2007-02-02 2012-07-04 Sumitomo Chemical Co., Ltd. Polymer, composition, liquid composition, and conductive thin film
EP2471834A1 (en) 2007-02-02 2012-07-04 Sumitomo Chemical Co., Ltd. New polymer, composition, liquid composition, and conductive thin film
WO2008096737A1 (en) 2007-02-06 2008-08-14 Sumitomo Chemical Company, Limited Indole compound-containing composition and light-emitting device using the composition
WO2008096742A1 (en) 2007-02-06 2008-08-14 Sumitomo Chemical Company, Limited Indazole compound-containing composition and light-emitting device using the composition
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WO2008096739A1 (en) 2007-02-06 2008-08-14 Sumitomo Chemical Company, Limited Benzimidazole compound-containing composition and light-emitting device using the composition
WO2008096736A1 (en) 2007-02-06 2008-08-14 Sumitomo Chemical Company, Limited Benzotriazole compound-containing composition and light-emitting device using the composition
EP2479235A1 (en) 2007-02-06 2012-07-25 Sumitomo Chemical Co., Ltd Indole compound-containing composition and light-emitting device using the composition
EP2479236A1 (en) 2007-02-06 2012-07-25 Sumitomo Chemical Co., Ltd. Indazole compound-containing composition and light-emitting device using the composition
WO2008111658A1 (en) 2007-03-09 2008-09-18 Sumitomo Chemical Company, Limited Polymer compound and composition containing the same
WO2008136492A1 (en) 2007-04-27 2008-11-13 Sumitomo Chemical Company, Limited Pyrene polymer and luminescent element made with the same
WO2008149829A1 (en) 2007-05-30 2008-12-11 Sumitomo Chemical Company, Limited Organic electroluminescent device and display using the device
WO2009008543A1 (en) 2007-07-12 2009-01-15 Sumitomo Chemical Company, Limited Method for manufacturing organic light-emitting device
WO2009017056A1 (en) 2007-07-31 2009-02-05 Sumitomo Chemical Company, Limited Compound, method for producing the same, ink composition using the compound, thin film, organic transistor, and organic electroluminescent device
WO2009048164A1 (en) 2007-10-10 2009-04-16 Sumitomo Chemical Company, Limited Polymer compound and polymer light-emitting device using the same
WO2009069820A1 (en) 2007-11-29 2009-06-04 Sumitomo Chemical Company, Limited Organic electroluminescent device and method for manufacturing the same
WO2009069476A1 (en) 2007-11-30 2009-06-04 Sumitomo Chemical Company, Limited Electronic device, display apparatus and method for manufacturing electronic device
WO2009084590A1 (en) 2007-12-28 2009-07-09 Sumitomo Chemical Company, Limited Polymer light-emitting device, method for manufacturing the same and polymer light-emitting display device
EP2846374A1 (en) 2008-03-07 2015-03-11 Sumitomo Chemical Company Limited Layered structure
WO2009110642A1 (en) 2008-03-07 2009-09-11 住友化学株式会社 Layered structure
WO2009131254A1 (en) 2008-04-25 2009-10-29 住友化学株式会社 Composition containing nitrogenous heterocyclic compounds
WO2009131255A1 (en) 2008-04-25 2009-10-29 住友化学株式会社 Polymeric compound having residue of nitrogenated heterocyclic compound
WO2009148103A1 (en) 2008-06-05 2009-12-10 住友化学株式会社 Polymer compound and organic transistor using the polymer compound
WO2009151144A1 (en) 2008-06-13 2009-12-17 住友化学株式会社 Copolymer and polymer light-emitting element using the same
WO2009157429A1 (en) 2008-06-23 2009-12-30 住友化学株式会社 Phosphorescence-emitting composition, and light-emitting element utilizing the composition
WO2009157427A1 (en) 2008-06-23 2009-12-30 住友化学株式会社 Composition and light-emitting element comprising the same
WO2009157426A1 (en) 2008-06-23 2009-12-30 住友化学株式会社 Composition and light-emitting element using the composition
DE112009001538T5 (en) 2008-06-23 2011-05-05 Sumation Co. Ltd. Composition and produced using the composition light emitting element
WO2009157428A1 (en) 2008-06-23 2009-12-30 住友化学株式会社 Phosphorescent light-emitting composition and light-emitting element comprising the composition
WO2010013827A1 (en) 2008-07-29 2010-02-04 住友化学株式会社 Composition comprising phosphorescence emitting compound, and light emitting element using the composition
WO2010013725A1 (en) 2008-07-30 2010-02-04 住友化学株式会社 Laminated structure, method for producing same, and electronic element comprising same
WO2010026972A1 (en) 2008-09-03 2010-03-11 住友化学株式会社 Polymer compound and polymer light-emitting element utilizing same
WO2010041559A1 (en) 2008-10-06 2010-04-15 住友化学株式会社 Polymer compound containing nitrogen-containing heterocyclic structure, and composition, solution, thin film and polymer light-emitting element each containing same
WO2010087510A1 (en) 2009-01-29 2010-08-05 住友化学株式会社 High-molecular compound and light-emitting element using same
WO2010123131A1 (en) 2009-04-23 2010-10-28 住友化学株式会社 Metal complex having aromatic ligand that contains nitrogen atom
DE112010003151T5 (en) 2009-07-31 2012-06-14 Sumitomo Chemical Company, Ltd. Polymer light-emitting device
WO2011040388A1 (en) 2009-09-30 2011-04-07 住友化学株式会社 Laminated structure, polymer, electroluminescent element, and photoelectric conversion element
WO2011049241A1 (en) 2009-10-22 2011-04-28 住友化学株式会社 Organic electroluminescent element
DE112010004188T5 (en) 2009-10-28 2012-11-22 Sumitomo Chemical Co., Ltd. Metal complex with multidentate ligand
WO2011087058A1 (en) 2010-01-15 2011-07-21 住友化学株式会社 Polymer light emitting element
WO2011093428A1 (en) 2010-01-28 2011-08-04 住友化学株式会社 Polymer compound and light-emitting device using same
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WO2011105622A1 (en) 2010-02-25 2011-09-01 住友化学株式会社 Fluoranthene polymeric compound
DE112011100845T5 (en) 2010-03-10 2013-01-24 Hiroshima University Thin film and used in the same compound
WO2011132698A1 (en) 2010-04-20 2011-10-27 住友化学株式会社 Organic light-emitting element
US9184388B2 (en) 2010-07-29 2015-11-10 Sumitomo Chemical Company, Limited Layered structure, electronic device using same, aromatic compound, and method for manufacturing said compound
US9837612B2 (en) 2010-12-21 2017-12-05 Sumitomo Chemical Company, Limted Polymer compound and light-emitting device using same
WO2012124770A1 (en) 2011-03-17 2012-09-20 住友化学株式会社 Metal complex compositions and mixture thereof
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