JPH0324752A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPH0324752A JPH0324752A JP1160377A JP16037789A JPH0324752A JP H0324752 A JPH0324752 A JP H0324752A JP 1160377 A JP1160377 A JP 1160377A JP 16037789 A JP16037789 A JP 16037789A JP H0324752 A JPH0324752 A JP H0324752A
- Authority
- JP
- Japan
- Prior art keywords
- silicone rubber
- based polymer
- film
- fluorine based
- semiconductor chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 29
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 14
- 239000011737 fluorine Substances 0.000 claims abstract description 14
- 230000002209 hydrophobic effect Effects 0.000 claims abstract description 13
- 229920002379 silicone rubber Polymers 0.000 claims abstract description 12
- 239000004945 silicone rubber Substances 0.000 claims abstract description 12
- 229920000642 polymer Polymers 0.000 claims abstract description 11
- 229910052751 metal Inorganic materials 0.000 claims abstract description 8
- 239000002184 metal Substances 0.000 claims abstract description 8
- 239000002904 solvent Substances 0.000 claims abstract description 8
- 229920002313 fluoropolymer Polymers 0.000 claims description 2
- 239000004811 fluoropolymer Substances 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 claims 1
- 229920005573 silicon-containing polymer Polymers 0.000 claims 1
- 239000011347 resin Substances 0.000 abstract description 8
- 229920005989 resin Polymers 0.000 abstract description 8
- 239000000203 mixture Substances 0.000 abstract description 4
- 229920006254 polymer film Polymers 0.000 abstract 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
- 229920001187 thermosetting polymer Polymers 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 229920001296 polysiloxane Polymers 0.000 description 5
- 238000007789 sealing Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000004927 clay Substances 0.000 description 1
- 238000001723 curing Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 238000013007 heat curing Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000001012 protector Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000004447 silicone coating Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明はシリコーンゴムの表面の分子密度をフッ素系ポ
リマーと溶媒で化学反応させ高密度にし、完全な気密封
止を施すことなく半導体チップの耐湿性を維持させた半
導体装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention increases the molecular density on the surface of silicone rubber by chemically reacting it with a fluorine-based polymer and a solvent, thereby improving the moisture resistance of semiconductor chips without completely hermetically sealing them. The present invention relates to a semiconductor device that maintains the following characteristics.
従来の技術
近年、半導体装置において高信頼性を得るために熱硬化
型樹脂による気密封止が多く利用されるようになってき
た。2. Description of the Related Art In recent years, hermetic sealing using thermosetting resin has come into widespread use in semiconductor devices in order to obtain high reliability.
以下に従来の気密封止した半導体装置について説明する
。A conventional hermetically sealed semiconductor device will be described below.
第２図は気密封止した半導体装置の断面図を示すもので
ある。第２図において、１は良熱伝導性の金属片、２は
半田、３は半導体チップ、４ぱ端子、６は半導体チップ
３と端子４を接続する電導性ワイヤー、６は半導体チッ
プを保護するチップコート材、７は熱硬化型樹脂である
。FIG. 2 shows a cross-sectional view of a hermetically sealed semiconductor device. In Figure 2, 1 is a metal piece with good thermal conductivity, 2 is solder, 3 is a semiconductor chip, 4 is a terminal, 6 is a conductive wire connecting semiconductor chip 3 and terminal 4, and 6 is a protector for the semiconductor chip. The chip coating material 7 is a thermosetting resin.
以上のように構戒された半導体装置について、以下その
動作について説明する。The operation of the semiconductor device configured as described above will be described below.
１ず半導体チップ３に電圧が印加され動作状態になるが
この半導体チップ３に水分が浸入すると表面のアルミパ
ターンが電解腐食される。そのために熱硬化型樹脂７に
よって水分の浸入を防止することが不可欠である。また
この熱硬化型樹脂７に要求される特性として応力の低い
、純度の高い、熱膨張係数の小さいものが必要である。First, a voltage is applied to the semiconductor chip 3 to bring it into operation, but when moisture enters the semiconductor chip 3, the aluminum pattern on the surface is electrolytically corroded. For this reason, it is essential to prevent moisture from entering with the thermosetting resin 7. Further, the properties required of this thermosetting resin 7 include low stress, high purity, and a small coefficient of thermal expansion.
ために長時間熱硬化とキュアが必要であり、バッジ生産
になり生産性が非常に悪く、熱膨張係数を小さくするた
めにシリカを充填するが粘土が上がシ作業性が非常に悪
〈、筐た高純度のためにコストが高いという欠点を有し
ていた。This requires long heat curing and curing, resulting in badge production, which results in very poor productivity.In order to reduce the coefficient of thermal expansion, silica is filled, but the clay builds up, making workability very poor. It had the disadvantage of high cost due to its high purity.
本発明は上記従来の問題点を解決するもので、半導体チ
ップを保護するチップコート材のシリコーン表面をフッ
素系ポリマーと溶媒で化学反応させることにより、シリ
コーンとフッ素系ポリマーを結合させ分子密度を非常に
高くした疎水性の膜を形或することによ９完全な気密封
止を必要とせずに耐湿性を維持させ、著しく生産性を向
上させることができる低コストの半導体装置を提供する
ことを目的とする。The present invention solves the above-mentioned conventional problems by chemically reacting the silicone surface of the chip coating material that protects semiconductor chips with a fluorine-based polymer and a solvent, thereby bonding the silicone and the fluorine-based polymer and greatly increasing the molecular density. To provide a low-cost semiconductor device that can maintain moisture resistance without requiring complete hermetic sealing and significantly improve productivity by forming a highly hydrophobic film. purpose.
課題を解決するための手段
この目的を達戒するために本発明の半導体装置は、良熱
伝導性の金属片と、この金属片に半田付けされる半導体
チップと、半導体チップをコーティンクシタシリコーン
ゴムト、ソのシリコーンゴム表面にフッ素系ポリマーと
溶媒の混合物をコーティングし、シリコーンの表面の分
子密度を非常に高くした疎水性の膜の構戊を有している
。Means for Solving the Problems In order to achieve this object, the semiconductor device of the present invention includes a metal piece with good thermal conductivity, a semiconductor chip soldered to the metal piece, and a silicone coating for coating the semiconductor chip. The silicone rubber surface of the rubber is coated with a mixture of a fluorine-based polymer and a solvent, and has a hydrophobic membrane structure with a very high molecular density on the silicone surface.
作 用
との構戒によって従来の樹脂を用いることなく、シリコ
ーンゴムの表面に形或された疎水性の膜により水分の浸
入を防止し、従来の疎水性を維持することができる。By considering the function, the hydrophobic film formed on the surface of the silicone rubber can prevent moisture from entering and maintain the conventional hydrophobicity without using a conventional resin.
実施例
以下本発明の一実施例について、図面を参照しながら説
明する。EXAMPLE An example of the present invention will be described below with reference to the drawings.
第１図は本発明の実施例にお・ける半導体装置の断面図
を示すものである。第１図において、８はフッ素系ポリ
マー、９は疎水性の膜である。FIG. 1 shows a cross-sectional view of a semiconductor device in an embodiment of the present invention. In FIG. 1, 8 is a fluorine-based polymer and 9 is a hydrophobic membrane.
以上のように構或された半導体装置について、以下その
動作を説明する。The operation of the semiconductor device constructed as described above will be described below.
まず半導体チッデ３に電圧が印加され動作状態になるが
フッ素系ポリマー８と溶媒がシリコーン表面の分子密度
を高くし、疎水性の膜９を形戒することによう水分の浸
入を防出し耐湿性を維持することができる。First, a voltage is applied to the semiconductor chip 3 and it becomes operational, but the fluorine-based polymer 8 and solvent increase the molecular density on the silicone surface and form a hydrophobic film 9 that prevents moisture from entering, making it moisture resistant. can be maintained.
以上のように本実施例によれば、フッ素系ポリマーと溶
媒の混合物をシリコーンゴム表面にコティングすること
によシ、高分子密度の疎水性の膜を形或させ水分の浸入
を防ぐことができ、特に熱硬化型の樹脂を使うことがな
い為に生産性を著しく向上させることができる。As described above, according to this example, by coating the silicone rubber surface with a mixture of a fluoropolymer and a solvent, a hydrophobic film with high molecular density can be formed to prevent moisture from entering. In particular, since no thermosetting resin is used, productivity can be significantly improved.
発明の効果
以上のように本発明はシリコーンゴム表面にフッ素系ポ
リマーをコーティングすることにより、シリコーン表面
を高分子密度の疎水性の膜を形或して耐湿性を維持させ
ることと共に著しく生産性のよい、低コストの半導体装
置を実現できる本のである。Effects of the Invention As described above, the present invention coats the silicone rubber surface with a fluorine-based polymer, thereby forming a hydrophobic film with high molecular density on the silicone surface, maintaining moisture resistance, and significantly improving productivity. This is a book that will help you create good, low-cost semiconductor devices.
第１図は本発明の実施例にむける半導体装置の断面図、
第２図は従来の半導体装置の断面図である。
１・・・・・・良熱伝導性の金属片、２・・・・・・半
田、３・・・・・・半導体チップ、４・・・・・・端子
、６・・・・・・導電性ワイヤー、６・・・・・・チッ
プコート材、７・・・・・・熱硬化型気密封止樹脂、８
・・・・・・フッ素系ポリマー、９・・・・・・疎水性
の膜、１０・・・・・・外装パッケージ。FIG. 1 is a cross-sectional view of a semiconductor device according to an embodiment of the present invention;
FIG. 2 is a sectional view of a conventional semiconductor device. 1...Metal piece with good thermal conductivity, 2...Solder, 3...Semiconductor chip, 4...Terminal, 6... Conductive wire, 6... Chip coating material, 7... Thermosetting hermetic sealing resin, 8
...Fluorine polymer, 9...Hydrophobic membrane, 10...Exterior package.
Claims (1)
導体チップと、その半導体チップを保護するためにコー
トされた分子密度の低いシリコーンゴムと、そのシリコ
ーンゴムの表面をフッ素系ポリマーと溶媒で化学反応さ
せることにより、シリコーンとフッ素ポリマーを結合さ
せ分子密度を高くした疎水性の膜とを備えた半導体装置
。A metal piece with good thermal conductivity, a semiconductor chip soldered to the metal piece, a silicone rubber with a low molecular density coated to protect the semiconductor chip, and a fluorine-based polymer on the surface of the silicone rubber. A semiconductor device equipped with a hydrophobic film that combines silicone and fluoropolymer to increase molecular density through a chemical reaction in a solvent.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1160377A JPH0324752A (en) | 1989-06-22 | 1989-06-22 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1160377A JPH0324752A (en) | 1989-06-22 | 1989-06-22 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0324752A true JPH0324752A (en) | 1991-02-01 |
Family
ID=15713651
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1160377A Pending JPH0324752A (en) | 1989-06-22 | 1989-06-22 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0324752A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5684325A (en) * | 1994-04-30 | 1997-11-04 | Canon Kabushiki Kaisha | Light-transmissive resin sealed semiconductor |
| US5869905A (en) * | 1996-01-15 | 1999-02-09 | Kabushiki Kaisha Toshiba | Molded packaging for semiconductor device and method of manufacturing the same |
| US7339280B2 (en) * | 2002-11-04 | 2008-03-04 | Siliconware Precision Industries Co., Ltd. | Semiconductor package with lead frame as chip carrier and method for fabricating the same |
-
1989
- 1989-06-22 JP JP1160377A patent/JPH0324752A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5684325A (en) * | 1994-04-30 | 1997-11-04 | Canon Kabushiki Kaisha | Light-transmissive resin sealed semiconductor |
| US5869905A (en) * | 1996-01-15 | 1999-02-09 | Kabushiki Kaisha Toshiba | Molded packaging for semiconductor device and method of manufacturing the same |
| US6258632B1 (en) | 1996-01-15 | 2001-07-10 | Kabushiki Kaisha Toshiba | Molded packaging for semiconductor device and method of manufacturing the same |
| US7339280B2 (en) * | 2002-11-04 | 2008-03-04 | Siliconware Precision Industries Co., Ltd. | Semiconductor package with lead frame as chip carrier and method for fabricating the same |
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