JPH03227000A - Sor (synchrotron) device - Google Patents

Abstract

PURPOSE:To surely and continuously perform SOR operation by arranging one linear accelerator and providing an electron incident part for making electrons from the linear accelerator selectively incident on each synchrotron respectively. CONSTITUTION:While arranging a plurality of synchrotrons 1 for taking out radiation light (SOR light) by circulating an electron beam and arranging one linear accelerator 22 to make electrons incident on the synchrotron 1 further a beam transport line 9 for mailing selectively incident electrons from the linear accelerator 22 on each synchrotron 1 respectively between the same accelerator 22 and each synchrotron 1. Since a plurality of synchrotrons are to be provided, either of synchrotrons 1 can surely perform SOR operation thus being able to constantly and surely perform lithography by means of SOR light. Further, one linear accelerator 22 can be incident on a plurality of synchrotrons 1 by turns and selectively until a prescribed amount of electrons can be accumulated and the stop time of the linear accelerator 22 is reduced thus to be able to constantly and effectively use the linear accelerator 22.

Description

Detailed Description of the Invention [Industrial Application Field] The present invention relates to an SOR device that extracts synchrotron radiation by making an electron beam circulate at the speed of light within a synchrotron, and particularly relates to an SOR device that extracts synchrotron radiation by rotating an electron beam at the speed of light within a synchrotron. The present invention relates to an SOR device that can inject electrons into.

[Prior Art] Recently, SOR devices have been attracting attention as light sources for semiconductor lithography.

The SOR device rotates an electron beam in a storage ring at the speed of light and extracts synchrotron radiation (SOR light) emitted when the electron beam is deflected by a magnetic field.

Normally, a large SOR device consists of three devices: a linear accelerator, a synchrotron, and a storage ring, but a small SOR device
An OR device that combines a synchrotron and a storage ring is currently being developed.

In this small SOR device, low-energy electrons of 100 MeV or less are repeatedly injected into the synchrotron from a linear accelerator, and once a predetermined accumulated current is secured in the synchrotron, the electron beam in the synchrotron is finalized. The energy is increased (for example, 800 MeV)*, and the SOR operation is performed at that energy for several tens of hours until the electron beam disappears to extract the SOR light.

[Problems to be Solved by the Invention] By the way, when considering the practical application of semiconductor lithography, the lithography processing capacity can be improved by connecting a large number of light extraction lines to the synchronizers 1 to 1 to extract the SOR light. Normally, the degree of vacuum in the synchrotron of an SOR device needs to be an ultra-high vacuum of 10 -9 to 10 torr, and therefore the synchrotron needs to be baked well. By the way, if the degree of vacuum inside the synchrotron is maintained well, it will take a relatively short period of time to repeatedly inject the electron beam and accumulate a predetermined current, then increase the electron beam energy to the final energy and enter SOR operation. If the baking within the power plate synchrotron that can be performed over a long period of time is inadequate, the amount of electrons consumed will be large, resulting in the problem that a predetermined accumulated current may not be accumulated within the synchrotron even after a long period of time. Therefore, the above-mentioned semiconductor lithography is not performed until the storage operation is shifted to the SOR operation, and there is a problem that the operating efficiency becomes extremely poor.

The present invention has been made in consideration of the above circumstances, and an object of the present invention is to provide an SOR device that can perform SOR operation reliably and continuously.

[Means for Solving the Problems] In order to achieve the above object, the present invention arranges a plurality of synchronizers 1 to 17 that make an electron beam go around and extract SOR light, and also injects electrons into a zinc 17 electron beam. One linear accelerator is disposed, and a beam transport line is provided between the linear accelerator and each synchrotron for selectively injecting electrons from the linear accelerator into each synchrotron.

[Function] The above configuration has multiple synchrotrons, so any one of the synchro 1 herons can always perform SOR operation, and link graphing using SOR light can be performed reliably at all times. Since there is no need to inject electrons from a linear accelerator, it is possible to sequentially and selectively inject electrons into multiple synchrotrons until a predetermined amount of electrons are accumulated, reducing the stop time of the linear accelerator, and increasing linear accelerators. The accelerator can be used effectively at all times.

[Example] Hereinafter, preferred embodiments of the present invention will be described based on the accompanying drawings.

In FIG. 1, 1 is a synchrotron, and a plurality of synchrotrons are installed in parallel. This synchrotron 1 is composed of an annular vacuum vessel 2 in which an electron beam circulates, a high-frequency acceleration cavity 3 that supplies energy to the electron beam orbiting within the vacuum vessel 2, and a deflection electromagnet 4 that deflects the electron beam. be done. Furthermore, the electron generator 8 and the acceleration tube 7 constitute a linear accelerator 22 . A light extraction line 5 is connected to the electron beam deflection section of the synchrotron 1, and an exposure device 6 for performing semiconductor processing is connected to the light extraction line 5. This light extraction line 5 is
In the figure, one line is connected to one synchrotron 1, but as long as the electron beam is deflected, the SOR will be emitted in the tangential direction, so any number of lines may be connected.

Accelerating tubes 7 are arranged along the direction in which these synchrotrons 1 are arranged. An electron generator 8 is connected to the acceleration tube 7, and the acceleration tube 7 accelerates electrons not generated by the electron generator 8 to, for example, 45 MeV. A beam transport line 9 is connected to the output end of the acceleration tube 7, and the electrons from the acceleration tube 7 are transferred to each synchrotron 1 via the beam transport line 9.
It is designed to be selectively incident on. This beam transport line 9 is connected to the output end of the acceleration tube 7 and has a beam channel 1 extending along the direction in which the synchrotrons 1 are arranged.
0, a plurality of input channels 11 connected to the beam channels 1-0 and guiding the electrons from the beam channel 10 to each synchrotron 1; It consists of a plurality of beam transport system electromagnets 12 that are deflected so as to be incident on each synchrotron 1.

Next, details of the inflector that causes electrons from the input channel 11 to enter the vacuum chamber 2 of the synchrotron 1 will be explained with reference to FIG.

In FIG. 2, an inflector chamber 3 is connected to the tip of the entrance channel 11, and the inflector chamber 13 is connected to the vacuum vessel 2 via an orifice J4. A septum electromagnet 15 is provided in the inflector chamber 13 to deflect the electrons from the incident channel 11 and enter the vacuum container 2 through the orifice 14. The trajectory of the electron beam orbiting around the vacuum container 2 is changed so that it does not collide with the electron beam entering the vacuum container 2 from the inflector chamber 13. Although not shown, these beams are converged by a converging electromagnet.

Next, the deflection electromagnet 4, focusing electromagnet, etc. of each synchrotron 1 are connected to an independent power supply device for each synchrotron 1, but the electromagnet on the electron incidence side, that is, the beam transport electromagnet 12. Septum electromagnet 15 and kitsker electromagnet 16
The power source is shared.

FIG. 3 shows a power supply device for the electromagnets of the electron incidence section flFJ. In the figure, if there are n synchrotrons 1, for example, the number of beam transport system electromagnets 12°, septum electromagnets 15, and kicker electromagnets 16 are connected to each other. Connect to the power supply switching circuit 18 via the power supply cable 17, connect one beam transport system electromagnet power supply, the septum electromagnet power supply 20, and the kicker electromagnet power supply 21 to the power supply switching circuit 18, and connect the power supply cable with the power supply switching circuit 18. 17, each beam transport system electromagnet 12. of the synchrotron 1 into which electrons should be incident. Enables power to be supplied to the septum electromagnet 15 and the kicker electromagnet 16.

Next, the operation of this embodiment will be explained.

First, a case where SOR operation is performed by injecting electrons into the synchrotron 1 at the first stage when viewed from the electron incidence side will be described first.

The electrons from the electron generator 8 are transferred to the acceleration tube 7, for example, 45
The beam is accelerated to M e V, deflected by the first-stage beam transport system electromagnet 1 - 2 , and enters the vacuum vessel 2 of the first-stage synchrotron 1 from the inflector chamber 13 .

The electrons entering the first stage vacuum vessel 2 are deflected by the deflection electromagnet 4, and are replenished with energy by the high frequency acceleration cavity 3, while orbiting the vacuum vessel 2 at the speed of light. This injection of electrons from the accelerating tube 7 is repeated, and the synchrotron 1
After a predetermined amount of current is accumulated in the electron beam, the magnetic field of the bending electromagnet 4 is gradually increased to increase the energy of the electron beam to the final energy (
(for example, 800 M e V), during which the SO radiated in the tangential direction of the beam deflected by the deflection magnet 4
The R light is taken out from the light extraction line 5 and enters an exposure device 6 to perform semiconductor lithography.

The lifetime of the electron beam in this first-stage synchrotron 1 when it orbits with the final energy is several tens of hours or more.
Inject more electrons. That is, the power supply switching circuit 18 shown in FIG.
5. Then, the power supply to the kicker electromagnet 16 is switched, and electrons are injected into the corresponding synchronizer 1 as described above to sequentially perform the SOR operation.

By performing SOR operation by sequentially and selectively injecting electrons from the accelerating tube 7 into the plurality of synchrotrons 1, -
The SOR operation of multiple synchrotrons 0 and 1 can be performed using the accelerator tube 7 of the stand, and even if there is a synchrotron 1 with baking failure, any other synchrotron 1 will be able to perform SOR operation.
Since the operation can be performed, semiconductor lithography using SOR light can be performed continuously.

In the above embodiment, the beam channel 10 is connected to the output end of the accelerator tube 7, and a plurality of input channels 11 are connected to the beam channel 10.
For example, if there are two synchrotrons 1 to 1, the synchrotrons 1 are placed on the left and right sides of the output end of the accelerator tube 7, and the electrons from the output end of the linear accelerator 7 are deflected left and right to the left and right synchrotrons 1. The light may be selectively switched and incident.

In addition, the electron emission energy of the accelerator tube 7 is set to 100 M eV.
With the above, a plurality of input channels 11 are connected in the middle of the beam channel of the acceleration tube 7, and each synchrotron 1
It may be configured such that electrons with different incident energies are incident on the two.

[Effects of the invention 1 As is clear from the above explanation, the present invention has zero According to this method, the following excellent effects are exhibited.

(1) By selectively switching and injecting electrons from the linear accelerator into a plurality of synchrotrons 1 to ron, the synchrotron can be operated reliably at all times while making effective use of the linear accelerator.

[Brief explanation of drawings]

FIG. 1 is a plan view showing an embodiment of the present invention, FIG. 2 is a diagram showing details of an inflector chamber for injecting electrons into a synchrotron in the present invention, and FIG. FIG. 3 is a diagram showing details of a power supply device. In the figure, 1 is a synchrotron, 2 is a vacuum vessel, 3 is a high-frequency acceleration cavity, 4 is a deflection magnet, 5 is a light extraction line, 6 is an exposure device, 7 is an acceleration tube, 9 is a beam transport line, and 11 is an input channel. , 12 is a beam transport electromagnet, and 22 is a linear accelerator. 1 Tohehe sentinel (0> Q:10) □mouth Csu~he r-SL++, he-Sho 1

Claims (1)

[Claims] 1. A plurality of synchrotrons are arranged to make the electron beam go around and extract SOR light, and one linear accelerator is arranged to input electrons into the synchrotron, and the electrons from the linear accelerator are selectively sent to each synchrotron. An SOR characterized by having an electron incidence section for making the electrons incident on the
Device.