JPH0322517A - Semiconductor manufacturing device - Google Patents
Semiconductor manufacturing deviceInfo
- Publication number
- JPH0322517A JPH0322517A JP1158961A JP15896189A JPH0322517A JP H0322517 A JPH0322517 A JP H0322517A JP 1158961 A JP1158961 A JP 1158961A JP 15896189 A JP15896189 A JP 15896189A JP H0322517 A JPH0322517 A JP H0322517A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- contact surface
- foreign substance
- contact surfaces
- chuck
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 239000004065 semiconductor Substances 0.000 title claims description 5
- 235000012431 wafers Nutrition 0.000 claims description 23
- 239000000126 substance Substances 0.000 abstract description 6
- 238000005259 measurement Methods 0.000 abstract description 2
- 238000000034 method Methods 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 241000220317 Rosa Species 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、半導体製造プロセスの転写技術に関するも
のである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a transfer technology for semiconductor manufacturing processes.
第4図、及び第5図はそれぞれ従来のチャックの1例金
示す正面図である。第◆図はフラットな吸着面に同心円
状に真空吸着用の溝が作られてかっ,第5図にウェハと
の接触面を最小限にするため点状の接触面金もっている
。図において、田はクエハ接触面、12}は真空吸着用
の溝、(61ぱ点状接触面を示す。FIGS. 4 and 5 are front views showing an example of a conventional chuck, respectively. Figure ◆ shows concentric grooves for vacuum suction formed on the flat suction surface, and Figure 5 shows dotted contact surfaces to minimize the contact surface with the wafer. In the figure, 12) indicates the contact surface of the square, 12} indicates the groove for vacuum suction, and 61 indicates the dotted contact surface.
第6図ぱクエハとクエハ吸着面+11との間に異物が付
着したことによってクエハが歪んだ状態金示す第4図の
チャックの劃向部分断面図、第7図ぼクエハに部分的1
c盛り上がりがある場合を示す第5図のチャックの11
1!1面部分断面図である。図にかいてIl+ぱクエハ
接触面、!31(Ijウェハ14)は異物、16}ハ点
状接触面、+81fl露光エリアである。Figure 6 shows a state where the wafer is distorted due to foreign matter adhering between the wafer and the suction surface +11.
11 of the chuck in Figure 5 showing the case where there is a bulge
1! It is a partial sectional view of the first plane. In the figure, Il + Pakueha contact surface! 31 (Ij wafer 14) is a foreign object, 16}C is a dotted contact surface, and +81fl is an exposure area.
次K動作について説明する。ハンドラーによって運搬さ
れたクエハ131は第4図、あるいは第5図のチャック
に吸着され、露光位置でその壕1の状態で露光される。The next K operation will be explained. The wafer 131 carried by the handler is attracted to the chuck shown in FIG. 4 or 5, and exposed in the groove 1 at the exposure position.
従来の装置は以上のように構成されているので,第6図
に示すごとくクエハ裏面に異物が付着した場合、その近
辺でクエハが擦り上がり,デフォーカス,リダクション
の変動などで正{准な写転が行なわれない。あるいは第
7図に小すごとくクエハが部分的に賂り上がっていた場
合、真空吸着しきれず盛り上がった1渣の状態で露光す
ることになり、やはり正確な転写が行なわれないなどの
問題点があった。Since the conventional device is configured as described above, if a foreign object adheres to the back side of the wafer as shown in Figure 6, the wafer will rub around the wafer, and defocus and reduction fluctuations will cause the image to become unreliable. Rolling is not done. Alternatively, if the surface of the wafer is partially raised as shown in Fig. 7, the vacuum suction cannot be completed and the wafer is exposed as a raised smear, resulting in problems such as inaccurate transfer. there were.
この発明は上記のような問題点を解消するためになされ
たもので、異物が付着してもその影響會消すことができ
るとともに、真空引きでないクエハの感り上りをも補正
できる装置を得ることを目的とする。This invention was made in order to solve the above-mentioned problems, and it is an object of the present invention to provide a device that can eliminate the influence of foreign matter even if it adheres, and can also correct the rising of wafers that are not vacuumed. With the goal.
この発明に係るチャックは、クエハとの接触面金細かく
分割し、分割されたそれぞれが必要lc5じ独立して基
準面に対し上下動できる。In the chuck according to the present invention, the contact surface with the wafer is divided into fine parts, and each of the divided parts can move up and down with respect to the reference surface independently by the required lc5.
この発明にかける特徴はクエハ裏而に異物が付着した場
合,その部分の接触面が下がり,クエハの屠り上がりを
防ぎ,=2たクエハの歪による橘り上がりに対しては露
光エリアの他の部分を上げることにより露光エリアの平
坦度を向上させる。The feature of this invention is that when a foreign substance adheres to the surface of the kueha, the contact surface of that part is lowered to prevent the kueha from rising. The flatness of the exposed area is improved by raising the area.
以下、この発明の一実施例金図について説明する。第1
図ぱクエハとの接触面を分割したチャックの正面図であ
る。第2図はこの発明の他の実施例による可動点状接触
面を有するチャックの画面部分断面図である。図にかい
て12)は真空吸着用の溝、131r/′iクエハ,+
61ij分割接触面、17}は可動点状接触面、t81
1dg光エリアである。Hereinafter, a gold map as an embodiment of the present invention will be described. 1st
FIG. 3 is a front view of the chuck in which the contact surface with the wafer is divided. FIG. 2 is a partial cross-sectional view of a chuck with a movable point contact surface according to another embodiment of the present invention. In the figure, 12) is a groove for vacuum suction, 131r/'i square, +
61ij divided contact surface, 17} is a movable point contact surface, t81
This is a 1dg optical area.
分割接触面(6)及び可動点状接触面17)ハ基準而に
対して上下動できるものとする。The divided contact surface (6) and the movable point contact surface 17) can be moved up and down with respect to the reference point.
次に動作について説明する。第8図に示すととくクエハ
131 VC異物(41が付着した場合、装置は露光エ
リア(8)内の焦点距離を測定し、その差から異物14
1の位[tr確認する。次に異物{4}の乗っている部
分の分割接触面+61 t−下方に引き、異物+41V
Cよる企を発生させない。Next, the operation will be explained. As shown in FIG. 8, if a foreign object (41) adheres to the Kueha 131, the device measures the focal length within the exposure area (8), and from the difference, the foreign object 14
1's place [tr check. Next, pull the divided contact surface +61 t-downward of the part where the foreign object {4} is placed, and remove the foreign object +41V.
Prevent attempts by C from occurring.
第2図にて可動点状接触面17)倉使用したチャックの
場合の説明金する。In Fig. 2, a movable dot-like contact surface 17) will be explained in case of a chuck used.
この場合、クエハ(31の裏面に異物{41付着による
企の発生は少ないが、熱処理の影響で部分的にウェハ1
3}が歪み,それが真空吸着しきれずに盛り上がった1
1となることがある。その場合、露光エリア(8)内で
焦点距離の異なる部分ができる0この時もやはり装置の
焦点距離の測定結果から、ある可動点状接触面(7)を
上昇させて露光エリア(8)全体の平坦度を増すことが
できる。In this case, although there are few occurrences of foreign matter adhering to the back surface of the wafer (31), due to the heat treatment, some parts of the wafer (1)
3} was distorted, and it could not be vacuum-adsorbed and rose 1
It may be 1. In that case, there will be parts with different focal lengths within the exposure area (8). At this time, too, based on the measurement results of the focal length of the device, a certain movable dot-like contact surface (7) can be raised to cover the entire exposure area (8). flatness can be increased.
上記の分割接触面i51及び可動点状接触面17》はチ
ャック基盤上に乗った状態で、下部に圧電素子等の伸縮
の制御が可能な物質を配置し、装置からの判断により上
下どちらかの方向に動作させる。The above-mentioned divided contact surface i51 and movable dotted contact surface 17 are placed on the chuck base, and a material that can control expansion and contraction, such as a piezoelectric element, is placed in the lower part, and can be either upper or lower depending on the judgment from the device. move in the direction.
以上のように、この発明によればチャックのクエハとの
接触面を分割し、それぞれを独立して動作させることが
できるので,クエハ裏面の異物付着による歪の発生を防
ぎ、ウェハの部分的な歪に対してもデフオーカろを起こ
さず処理することができる。As described above, according to the present invention, the contact surface of the chuck with the wafer can be divided and each part can be operated independently. This prevents distortion caused by foreign matter adhering to the back surface of the wafer. Distortion can also be processed without causing defocussion.
第1図はこの発明に係る半導体製造装置の一実施例によ
るチャックの正面図,第8図はこのこの発明の他の実施
例によるチャックのIlllI[flli部分断面図、
第8図は第1図のチャックにかいてクエハと分割接触面
との間に異物が存在する場合を示すチャックの測面部分
断面図、第4図及び第5図は従来のチャックの構造全示
す正面図、第6図は第4図のチャックVCカいてクエハ
とクエハ接触面との間に異物が存在する場合を示すチャ
ックの側面部分断面図、第7図は第6図のチャックにか
いてクエハに部分的盛り上りがある場合を示すチャック
の側面部分断面図である。
図に釦いて+21は真空吸着用の溝、(31はクエハ、
141は異物,{6}は分割接触面、(7}ぱ可動点状
接触面、(8)は露光エリアである。
なか、図中,同一符号は同一 又は相当部分を示す。FIG. 1 is a front view of a chuck according to an embodiment of a semiconductor manufacturing apparatus according to the present invention, and FIG. 8 is a partial cross-sectional view of a chuck according to another embodiment of the present invention.
Fig. 8 is a partial cross-sectional view of the surface of the chuck shown in Fig. 1, showing the case where a foreign object exists between the wafer and the split contact surface, and Fig. 4 and Fig. 5 show the entire structure of the conventional chuck. 6 is a side partial sectional view of the chuck shown in FIG. 4 where there is a foreign object between the wafer and the wafer contact surface, and FIG. 7 is a partial sectional view of the chuck VC shown in FIG. FIG. 3 is a side partial cross-sectional view of the chuck showing a case where the quefer has a partial bulge. In the figure, +21 is the groove for vacuum suction, (31 is Kueha,
141 is a foreign object, {6} is a divided contact surface, (7) is a movable point contact surface, and (8) is an exposure area. In the figures, the same reference numerals indicate the same or equivalent parts.
Claims (1)
導体製造装置において、ウェハを真空吸着するチャック
の、ウェハと接触する部分を細かく分割し、それぞれの
部分が独立して上下動を行なうことを特徴とする半導体
製造装置。In semiconductor manufacturing equipment used to transfer circuits onto wafers using a stepper, the part of the chuck that vacuum-chucks the wafer that comes into contact with the wafer is divided into small parts, and each part moves up and down independently. Features of semiconductor manufacturing equipment.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1158961A JPH0322517A (en) | 1989-06-20 | 1989-06-20 | Semiconductor manufacturing device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1158961A JPH0322517A (en) | 1989-06-20 | 1989-06-20 | Semiconductor manufacturing device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0322517A true JPH0322517A (en) | 1991-01-30 |
Family
ID=15683139
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1158961A Pending JPH0322517A (en) | 1989-06-20 | 1989-06-20 | Semiconductor manufacturing device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0322517A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6513419B2 (en) | 1998-12-31 | 2003-02-04 | Wmf Wurttembergische Metallwarenfabrik Ag | Coffee machine |
-
1989
- 1989-06-20 JP JP1158961A patent/JPH0322517A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6513419B2 (en) | 1998-12-31 | 2003-02-04 | Wmf Wurttembergische Metallwarenfabrik Ag | Coffee machine |
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