JPH03171754A - Semiconductor failure analysis device - Google Patents

Abstract

PURPOSE:To specify a semiconductor structure parameter which may be a cause of failure in a short time when the measured semiconductor device parameter value is out of the standard value by using a measured semiconductor device parameter table and a semiconductor device - structure parameter correlation table and by using a simple calculation and comparison means. CONSTITUTION:A semiconductor failure analysis device consists of a measurement semiconductor device parameter registration means 11, a semiconductor device - structure parameter correlation registration means 12, a deviation - correlation multiplication means 13, a failed semiconductor structure parameter judgment table registration means 14, and a failure-cause semiconductor structure parameter determining means 15. Then, a deviation value 24 within a measurement semiconductor device parameter table is multiplied by a correlation value 34 within a semiconductor device - structure parameter correlation table. Then, it becomes possible to determine a semiconductor structure parameter which may be the cause of failure of the semiconductor device at high speed without enabling the multiplication result to include 0 and by outputting the semiconductor structure parameter of the same symbol.

Description

[Detailed Description of the Invention] Industrial Field of Application The present invention relates to a semiconductor failure analysis device that is used in a semiconductor manufacturing support system, etc., and detects structural defects in a semiconductor device from measured semiconductor device parameter values. Conventional technology Conventional semiconductor failure analysis equipment is capable of analyzing the semiconductor that causes the failure when the semiconductor device parameter values measured during the inspection and measurement process are outside the ranges specified in advance at the design stage, that is, when a failure occurs. Identification of structural defects, that is, identification of defective semiconductor device parameters (using theoretical formulas or simulations based on semiconductor device parameter values measured by friends)
In addition, as another method (1), the invention attempts to solve the problem by identifying the semiconductor device parameters or the semiconductor structure parameters that cause the board to be defective, which are measured by engineers with highly specialized knowledge based on their specialized knowledge and experience. However, with the semiconductor failure analysis equipment such as the one mentioned above (.t
In order to identify semiconductor structural parameters that are defective using theoretical formulas and simulations, etc., a super dog-shaped computer is required, resulting in an overall expensive and complicated system structure. In order to identify the parameters of the defective semiconductor structure (friend
The problem is that a huge amount of measurement data is required, and it takes a long time to collect all of this data and perform the actual calculations. When specifying semiconductor structural parameters, there is the problem that such engineers must be on hand at all times in the current 24-hour semiconductor production line, which incurs extra costs. If a device fails, it is determined based on the knowledge and experience of the engineer.8 It is not possible to identify which device has failed from the semiconductor device parameter values in a short period of time.t4
In view of this, an object of the present invention is to provide an inexpensive semiconductor failure analysis device that can quickly identify semiconductor structural parameters that cause the deviation of measured semiconductor device parameter values from standard values. Means for Solving the Problems The present invention includes means for registering semiconductor device parameters and deviations of semiconductor device parameter values from reference values as items in a measured semiconductor device parameter table, and the semiconductor device parameters and means for registering a semiconductor structure parameter that causes a change in the semiconductor device parameter value and a correlation between the semiconductor device parameter and the semiconductor structure parameter in a semiconductor device-structure parameter correlation table; and the measured semiconductor device parameter table. and a deviation-correlation calculation means for calculating a deviation value and a correlation value of the same record as the semiconductor device parameter with respect to the same semiconductor device parameter name of the semiconductor device-structure parameter correlation table, the semiconductor structure parameter, and
means for registering the calculation result as an item in a defective semiconductor structure parameter determination table; and means for identifying a defect-causing semiconductor structure parameter using the calculation result value for the same semiconductor structure parameter name in the defective semiconductor structure parameter determination table. The present invention is also applicable to a semiconductor failure analysis apparatus equipped with the above-mentioned system, in which the semiconductor device parameter value is measured to be deviated from the reference value based on the calculation result value in the failure semiconductor structure parameter judgment table. Embodiment Next, an embodiment of the semiconductor failure analysis apparatus of the present invention will be described with reference to the accompanying drawings. 1 is a block diagram showing the structure of the semiconductor failure analysis apparatus according to the invention, in which L 11 is a measured semiconductor device parameter registration hand; 12 is a semiconductor device structure parameter correlation registration hand; 11 is a deviation-correlation multiplication hand;
14 is defective semiconductor structure parameter judgment table registration method 1
In the semiconductor failure analysis apparatus of this embodiment configured as described above, each means will be explained. First, the measured semiconductor device parameter registration means l1 identifies the semiconductor device parameters. 2l and the semiconductor device parameter name 23(
For example, threshold voltage Vt, substrate bias effect dVts
ub, gate capacitance IC, go+t, etc.), and if the semiconductor device parameter value is larger than the standard upper limit value specified at the time of design, +1 is added, and if it is smaller than the standard lower limit value, -1 is registered. , and for those within the reference range, O is registered as the deviation value 24. The semiconductor measuring device parameter table created in this manner is shown in FIG.

The semiconductor device-structural parameter correlation registration means l2 (
The semiconductor device is stored in the semiconductor device-structure parameter correlation table that has as items the semiconductor device parameter 2l, the semiconductor structure parameter 3l that is a factor of change in the semiconductor device parameter value, and the correlation 32 between the semiconductor device parameter 2l and the semiconductor structure parameter 3l. Parameter name 23 and semiconductor device parameter 21
This registers semiconductor structure parameter names 33 (for example, gate oxide film thickness t,..., impurity concentration N oh, gate length L, etc.) caused by changes in , and registers their correlation values 34 in one record. However, the correlation value 34
(:L +1 for those in which the semiconductor device parameter value increases (decreases) when the semiconductor structure parameter value increases (decreases); when the semiconductor structure parameter value increases (decreases), the semiconductor device parameter value decreases (increases)
The semiconductor device-structure parameter correlation table created in the above manner is shown in FIG. - With respect to the same semiconductor device parameter name in the structure parameter correlation table, the deviation value 24 of the same record as the semiconductor device parameter is multiplied by the correlation value 34. , the multiplication result 4
The semiconductor structure parameter name 33 and the multiplication result value 42 calculated by the deviation-correlation multiplication means are registered in the defective semiconductor structure parameter judgment table having 1 as an item. A defective semiconductor structure parameter determination table created in this manner is shown in FIG.

The defect-causing semiconductor structure parameter identification step 15 is carried out using a flowchart as shown in FIG.

Extract all multiplication result values with the same semiconductor structure parameter name, and determine if the multiplication result values contain O. Determine if all multiplication result values have the same sign, and check if the multiplication results do not contain 0. All the multiplication result values have the same sign. As described above, according to this embodiment, the deviation value in the measured semiconductor device parameter table is multiplied by the correlation value in the semiconductor device-structure parameter correlation table, and the multiplication result is O. By outputting semiconductor structure parameters with the same sign, it is possible to quickly identify the semiconductor structure parameters that cause defects in the semiconductor storage device. In this example, the deviation and correlation value is 0.1. Force exchange explained using integer values such as This is only used to make the present invention easier to understand, and in reality, it is possible to further improve the failure analysis accuracy of the present invention by using real values and functions. . In addition, in this embodiment, the semiconductor structure parameters that cause defects can be identified by the results of division and other calculations using the results of multiplying the deviation and the correlation value.Effects of the Invention As explained above, the present invention According to the ``Measured Semiconductor Device Parameter Table'' and the Semiconductor Device-Structural Parameter Correlation Table, when the measured semiconductor device parameter value is outside the reference range, the causative semiconductor structural parameter can be determined by simple calculation and comparison means. It is possible to provide a semiconductor defect analysis device that identifies semiconductor defects in a short time at a low cost, and its practical effects are large (1

[Brief explanation of the drawing]

FIG. 1 shows the blocks of the semiconductor failure analysis apparatus in the embodiment of the present invention, FIG. 2 shows the structure of the measured semiconductor device parameter table in the embodiment, and FIG. 3 shows the structure of the semiconductor device-structure parameter correlation table in the embodiment. Structure @ Fig. 4 is a diagram showing the structure of the defective semiconductor structure parameter determination table in the same embodiment. Fig. 5 is a flowchart showing the operation of the defect-causing semiconductor structure parameter identifying means in the same embodiment.

Claims (1)

[Claims] means for registering semiconductor device parameters and deviations of semiconductor device parameter values from reference values as items in a measured semiconductor device parameter table;
means for registering in a semiconductor device-structure parameter correlation table the semiconductor device parameters, semiconductor structure parameters that are a cause of changes in the semiconductor device parameter values, and the correlation between the semiconductor device parameters and the semiconductor structure parameters as items; deviation-correlation calculating means for calculating deviation values and correlation values of the same record as the semiconductor device parameter with respect to the same semiconductor device parameter name in the measured semiconductor device parameter table and the semiconductor device-structure parameter correlation table; , means for registering the calculation result as an item in a defective semiconductor structure parameter determination table; and identifying a defect-causing semiconductor structure parameter using the calculation result value for the same semiconductor structure parameter name in the defective semiconductor structure parameter determination table. A semiconductor failure analysis device comprising means.