JPH03168640A - Photomask inspection device - Google Patents
Photomask inspection deviceInfo
- Publication number
- JPH03168640A JPH03168640A JP1308770A JP30877089A JPH03168640A JP H03168640 A JPH03168640 A JP H03168640A JP 1308770 A JP1308770 A JP 1308770A JP 30877089 A JP30877089 A JP 30877089A JP H03168640 A JPH03168640 A JP H03168640A
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- transparent
- flaw
- photomask
- defect
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000007689 inspection Methods 0.000 title claims description 21
- 230000007547 defect Effects 0.000 claims description 67
- 230000000903 blocking effect Effects 0.000 claims 1
- 238000012545 processing Methods 0.000 abstract description 9
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000002834 transmittance Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000004458 analytical method Methods 0.000 description 3
- 230000002950 deficient Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000012937 correction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000001514 detection method Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Landscapes
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
Abstract
Description
【発明の詳細な説明】
〔概 要〕
半導体装置の製造等に使用するホトマスク及びレチクル
の検査装置に関し、
パターン欠陥の検査に要する時間の短縮が可能な検査装
置を提供することを目的とし、透明パターンとなるべき
領域に存在する半透明異物を透明パターンとなるべき領
域に存在する不透明欠陥及び遮光パターンとなるべき領
域に存在する透明欠陥とは区別して検出するように構或
する．
〔産業上の利用分野〕
本発明は、半導体装置の製造等に使用するホトマスク及
びレチクル（以下この両者をホトマスクで代表する）の
検査装置に関する．
半導体装置の製造工程のうち、ウエーハ処理工程におい
てはホトマスクのパターンをウエーハに転写する工程が
繰り返される。このホトマスクのパターンに欠陥がある
とそれがウエーハに転写されてウェーハの欠陥となるた
め、ホトマスクのパターンには欠陥があってはならない
。従ってホトマスク製造工程においてはパターンの欠陥
を厳重に検査するが、この検査には長時間を要するため
、検査時間の短縮が可能な検査装置の開発が望まれてい
る。[Detailed Description of the Invention] [Summary] Regarding inspection equipment for photomasks and reticles used in the manufacture of semiconductor devices, etc., the purpose of this invention is to provide an inspection equipment that can shorten the time required to inspect pattern defects. The system is configured to detect semitransparent foreign matter existing in an area that should be a pattern, separately from opaque defects existing in an area that should be a transparent pattern, and transparent defects existing in an area that should be a light-shielding pattern. [Industrial Application Field] The present invention relates to an inspection device for photomasks and reticles (hereinafter both will be referred to as photomasks) used in the manufacture of semiconductor devices. In the wafer processing step of the semiconductor device manufacturing process, a process of transferring a photomask pattern onto a wafer is repeated. If there is a defect in the photomask pattern, it will be transferred to the wafer and become a wafer defect, so the photomask pattern must be free of defects. Therefore, in the photomask manufacturing process, pattern defects are strictly inspected, but since this inspection requires a long time, it is desired to develop an inspection apparatus that can shorten the inspection time.
従来のホトマスクのパターン欠陥自動検査装置を説明す
る．ホトマスクのパターン欠陥自動検査には種々の方式
があるが、現在量産用装置に採用されているのは、同一
ホトマスク内の２個のチップパターン（または２個のレ
チクル）を同時走査して比較する方式である．以下これ
を第１図により説明する。第１図は代表的なホトマスク
用パターン欠陥自動検査装置の概略ＩＩ戒図である。図
中、１はホトマスクであり、多数のチップパターン２を
有している。このホトマスク１はＸＹ移動台（図示は省
略）上に固定されている．レーザー・ヘッド１１内で発
光したレーザー光のビームを２つに分割してホトマスク
ｌ上の２つのチップパターン２Ａ及び２Ｂのそれぞれ同
じ位置を照射し、チップパターン２Ａ及び２Ｂの各全域
を同時に走査する．それぞれの透過光をそれぞれ光検出
器１２Ａ及び１２Ｂで受光し、これらの出力を信号処理
回路１３に伝える．この信号処理回路１３では光検出器
１２Ａ及び１２Ｂからの信号を比較し、両者に差があれ
ばそれを欠陥と判定すると共に欠陥を検出した位置（座
標）を記憶する。チップパターン２Ａ及び２Ｂから検出
された総ての欠陥の画像をディスプレー装置１４で逐次
確認することが出来る。This article describes a conventional photomask pattern defect automatic inspection system. There are various methods for automatic pattern defect inspection of photomasks, but the one currently used in mass production equipment scans and compares two chip patterns (or two reticles) within the same photomask simultaneously. This is the method. This will be explained below with reference to FIG. FIG. 1 is a schematic diagram of a typical photomask pattern defect automatic inspection apparatus. In the figure, 1 is a photomask, which has a large number of chip patterns 2. This photomask 1 is fixed on an XY moving table (not shown). The beam of laser light emitted within the laser head 11 is divided into two and irradiates the same position on each of the two chip patterns 2A and 2B on the photomask l, thereby simultaneously scanning the entire area of each of the chip patterns 2A and 2B. ．． The respective transmitted lights are received by photodetectors 12A and 12B, and their outputs are transmitted to a signal processing circuit 13. This signal processing circuit 13 compares the signals from the photodetectors 12A and 12B, and if there is a difference between the two, it is determined to be a defect and the position (coordinates) where the defect was detected is stored. Images of all defects detected from the chip patterns 2A and 2B can be sequentially checked on the display device 14.
ところでパターンの欠陥には、透明パターンとなるべき
領域に存在する不透明欠陥及び遮光パターンとなるべき
領域に存在する透明欠陥の他に、透明パターンとなるべ
き領域に存在する半透明異物の付着がある。第２図は２
個のチップパターン２Ａ及び２Ｂの内、２Ａのパターン
には欠陥がなく、２Ｂのパターンには種々の欠陥がある
場合を示している．遮光パターン２１および不透明欠陥
２１ｘでは光の透過率は略０％、透明パターン２２およ
び透明欠陥２２ｘでは光の透過率は略１００％であるの
に対して、半透明異物２３ではそれらの中間的な透過率
を示す．しかしこの装置でこの２つのチップパターンの
信号を信号処理回路１３で処理する場合、両者の信号に
差が検知されれば総て同一の欠陥と判定される。By the way, pattern defects include opaque defects that exist in areas that should be transparent patterns, transparent defects that exist in areas that should be light-shielding patterns, and the attachment of translucent foreign matter that exists in areas that should be transparent patterns. . Figure 2 is 2
Of the chip patterns 2A and 2B, the pattern 2A has no defects and the pattern 2B has various defects. The light transmittance of the light shielding pattern 21 and the opaque defect 21x is approximately 0%, and the light transmittance of the transparent pattern 22 and the transparent defect 22x is approximately 100%. Indicates transmittance. However, when the signals of these two chip patterns are processed by the signal processing circuit 13 in this device, if a difference is detected between the two signals, it is determined that they are all the same defect.
一般に半透明異物はホトレジストの残渣、塵埃等であり
、再洗浄により除去される．一方、不透明欠陥２１ｘ及
び透明欠陥２２ｘは再洗浄では修復されず、再製作また
は部分修正を要する．従って全域の走査を終えた後、オ
ペレータが検出された総ての欠陥の画像をディスプレー
装置１４で逐次１ｉ！認し、そのホトマスクが再洗浄の
みで良品となるものか、再製作又は部分修正を要するも
のかを判断していた。Translucent foreign matter is generally photoresist residue, dust, etc., and is removed by re-cleaning. On the other hand, the opaque defect 21x and the transparent defect 22x cannot be repaired by re-cleaning, but require remanufacturing or partial correction. Therefore, after scanning the entire area, the operator displays the images of all the detected defects one by one on the display device 14! It was then determined whether the photomask would be of good quality with just recleaning, or whether it would require remanufacturing or partial modification.
ところがこのように欠陥と判定されたものの多くは再洗
浄のみで良品となるものであり、この種の欠陥のために
欠陥分析に多大の作業時間を費やすと共に、この欠陥分
析を検査装置を用いて行うため、検査装置のスループッ
ト低下を招いていた．本発明は、このような問題を解決
して、パターン欠陥の検査に要する時間の短縮が可能な
検査装置を提供することを目的とする。However, many of the products that are determined to be defective in this way can be made into good products just by re-cleaning, and this type of defect requires a lot of work time to analyze the defects, and it is difficult to perform this defect analysis using inspection equipment. This resulted in a decrease in the throughput of the inspection equipment. SUMMARY OF THE INVENTION An object of the present invention is to provide an inspection apparatus capable of solving such problems and shortening the time required for inspecting pattern defects.
この目的は、本発明によれば、透明パターンとなるべき
領域に存在する半透明異物を透明パターンとなるべき領
域に存在する不透明欠陥及び遮光パターンとなるべき領
域に存在する透明欠陥とは区別して検出することを特徴
とするホトマスクの検査装置とすることで、達威される
。According to the present invention, this purpose is to distinguish semitransparent foreign matter existing in an area to be a transparent pattern from opaque defects existing in an area to be a transparent pattern and transparent defects existing in an area to be a light-shielding pattern. This can be achieved by using a photomask inspection device that is characterized by detection.
第ｌ図における光検出器１２Ａと１２Ｂとの出力の差が
、半透明異物の場合は透明欠陥及び不透明欠陥の場合よ
り小さいことに着目し、信号処理回路１３ではこの出力
差の程度に応じて２つのレベルの欠陥に分けて判定する
。そしてこの出力差の小さい欠陥のみのホトマスクにつ
いては透明欠陥及び不透明欠陥は存在せず半透明異物の
付着のみと判断し、画像による欠陥分析を行うことなく
、総て再洗浄を行うようにする。従来欠陥と判定してい
たものの多くが半透明異物の付着であるため、この装置
の採用により画像による欠陥分析を行う時間が大幅に削
減される。Noting that the difference between the outputs of the photodetectors 12A and 12B in FIG. Judgment is made by dividing into two levels of defects. For photomasks with only defects with a small output difference, it is determined that there are no transparent defects or opaque defects, only the attachment of semi-transparent foreign matter, and all of the photomasks are re-cleaned without image-based defect analysis. Since most of the defects that were conventionally determined to be the adhesion of translucent foreign matter, the adoption of this device will significantly reduce the time required to perform image-based defect analysis.
本発明に基づくホトマスクの検査装置の実施例を第１図
及び第２図により説明する。An embodiment of a photomask inspection apparatus based on the present invention will be described with reference to FIGS. 1 and 2.
第１図は代表的なホトマスク用パターン欠陥自動検査装
置の概略構戒図である。概略構或は〔従来の技術〕の項
で前述した通りであり、同一の図を用いるが、機能の一
部が異なっている．図中、１はホトマスクであり、多数
のチップパターン２を有している。このホトマスク１は
ＸＹ移動台（図示は省略）上に固定されている。レーザ
ー・ヘッド１１内で発光したレーザー光のビームを２つ
に分割してホトマスク１上の２つのチップパターン２Ａ
及び２Ｂのそれぞれ同じ位置を照射し、チップパターン
２Ａ及び２Ｂの各全域を同時に走査する．それぞれの透
過光をそれぞれ光検出器１２Ａ及び１２Ｂで受光し、こ
れらの出力を信号処理回路１３に伝える。この信号処理
回路１３で光検出器１２Ａ及び１２Ｂからの信号を比較
し、両者に差があればこれを欠陥と判定する。但し、そ
の差の程度に応じて次のように２つのレベルの欠陥に分
けて判定する。FIG. 1 is a schematic diagram of a typical photomask pattern defect automatic inspection apparatus. As described above in the section of the schematic structure or [prior art], the same diagrams are used, but some of the functions are different. In the figure, 1 is a photomask, which has a large number of chip patterns 2. This photomask 1 is fixed on an XY moving table (not shown). The beam of laser light emitted within the laser head 11 is divided into two to create two chip patterns 2A on the photomask 1.
and 2B, and simultaneously scan the entire area of chip patterns 2A and 2B. The respective transmitted lights are received by photodetectors 12A and 12B, and their outputs are transmitted to the signal processing circuit 13. This signal processing circuit 13 compares the signals from the photodetectors 12A and 12B, and if there is a difference between the two, it is determined that this is a defect. However, depending on the degree of the difference, defects are classified into two levels as follows.
前述のように第２図における遮光パターン２ｌおよび不
透明欠陥２１ｘでは光の透過率は略０％、透明パターン
２２および透明欠陥２２ｘでは光の透過率は略１００％
であるから、チップパターン２Ａに欠陥がない場合、第
ｌ図における光検出器１２Ａと１２Ｂとの出力の差は、
透明パターン２２を透過する光の出力をｉｏｏとすると
■チップパターン２Ｂに欠陥がない場合０−０＝０
または１００−１００ ＝０■チップパターン２Ｂに不
透明欠陥２１ｘがある場合１００ − ０ − １
００
■チップパターン２Ｂに透明欠陥２２ｘがある場合０
−１００ ＝−１００
■チップパターン２Ｂに半透明異物２３（例えば透過率
５０％）がある場合
例えば １００ − ５０ ＝ ５０
となる。従って信号処理回路１３において、光検出器１
２Ａと１２Ｂとの出力の差の絶対値が例えば９９以上を
欠陥Ａ、９９未満を欠陥Ｂと分けて判定する（境界値の
設定は可変とする〉．
欠陥Ａについては従来装置と同様に欠陥を検出した位置
（座標）を総て記憶し、別途この欠陥の画像をディスプ
レー装置１４で逐次確認することが出来る。一方、欠陥
Ｂについては検出個数のみカウントする。As mentioned above, the light transmittance of the light shielding pattern 2l and the opaque defect 21x in FIG. 2 is approximately 0%, and the light transmittance of the transparent pattern 22 and the transparent defect 22x is approximately 100%.
Therefore, if there is no defect in the chip pattern 2A, the difference in output between the photodetectors 12A and 12B in FIG.
If the output of light passing through the transparent pattern 22 is ioo, then ■ If there is no defect in the chip pattern 2B, 0-0=0
Or 100-100 = 0 ■ If chip pattern 2B has opaque defect 21x, 100 - 0 - 1
00 ■0 if chip pattern 2B has transparent defect 22x
-100 = -100 (1) When the chip pattern 2B has a semi-transparent foreign substance 23 (for example, transmittance of 50%), for example, 100 - 50 = 50. Therefore, in the signal processing circuit 13, the photodetector 1
For example, if the absolute value of the difference between the outputs of 2A and 12B is 99 or more, it is determined as defect A, and if it is less than 99, it is determined as defect B (setting of the boundary value is variable). Defect A is determined as a defect in the same way as in the conventional device. All detected positions (coordinates) are memorized, and images of the defects can be sequentially checked separately on the display device 14.On the other hand, as for defect B, only the number of detected defects is counted.
以上述べた本発明の装置を次のように使用する．欠陥Ａ
が１個でも検出されたホトマスクはこれを不良品とし、
総ての欠陥をディスプレー装置１４でＷ１認した後、再
製作又は部分修正を行う。一方、欠陥Ａが皆無で欠陥Ｂ
のみ存在するホトマスクは再洗浄により良品となり得る
ものであるからこれを半良品とし、欠陥をディスプレー
装置１４で確認することなく、直ちに再洗浄を行う。The apparatus of the present invention described above is used as follows. Defect A
A photomask in which even one is detected is considered a defective product.
After all defects are recognized by W1 on the display device 14, remanufacturing or partial correction is performed. On the other hand, there is no defect A and defect B
Since the photomask that only exists can be made into a non-defective product by re-cleaning, it is treated as a semi-defective product and immediately re-cleaned without checking for defects on the display device 14.
本発明は以上の実施例に限定されることなく、更に種々
変形して実施出来る。The present invention is not limited to the above embodiments, but can be implemented with various modifications.
以上説明したように、本発明によれば、検査時間の短縮
が可能なパターン欠陥検査装置を提供することが出来る
ため、半導体装置製造等に用いるホトマスク及びレチク
ルの製造合理化等に寄与するところが大である。As explained above, according to the present invention, it is possible to provide a pattern defect inspection device that can shorten inspection time, and therefore it greatly contributes to streamlining the production of photomasks and reticles used in semiconductor device production, etc. be.
第１図は代表的なホトマスク用欠陥自動検査装置の概略
構成図、
第２図はパターン欠陥の例を示す模式図、である。
図中、１はホトマスク、
２．２Ａ．２Ｂはチップパターン、
工１はレーザー・ヘッド、
１２八，１２Ｂは光検出器、
１３は信号処理回路、
１４はディスプレー装置、
２１は遮光パターン、
２１ｘは不透明欠陥、
２２は透明パターン、
２２ｘは透明欠陥、
２３
は半透明異物、
である。
イベ表６７ｑ丁・トマ又７用欠？１る自會方検玄．笠竃
の彩九但を市角巧律８ＶＩ １ 起FIG. 1 is a schematic diagram of a typical automatic photomask defect inspection apparatus, and FIG. 2 is a schematic diagram showing an example of pattern defects. In the figure, 1 is a photomask, 2.2A. 2B is a chip pattern, 1 is a laser head, 128, 12B is a photodetector, 13 is a signal processing circuit, 14 is a display device, 21 is a light shielding pattern, 21x is an opaque defect, 22 is a transparent pattern, 22x is transparent Defect 23 is a translucent foreign substance. Event table 67q-cho Tomomata 7 missing? 1 self-meeting test. Ichikado Takumi Ritsu 8VI 1 Originated from Aya Kutan of Kasagasa
Claims (1)
スクの検査装置であって、 透明パターンとなるべき領域に存在する半透明異物を透
明パターンとなるべき領域に存在する不透明欠陥及び遮
光パターンとなるべき領域に存在する透明欠陥とは区別
して検出することを特徴とするホトマスクの検査装置。[Claims] A photomask inspection device that automatically detects pattern defects on a photomask, which detects translucent foreign matter existing in an area that should be a transparent pattern, opaque defects existing in an area that should be a transparent pattern, and light blocking. A photomask inspection device is characterized in that it detects a transparent defect separately from a transparent defect existing in an area that is to become a pattern.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30877089A JP3067142B2 (en) | 1989-11-28 | 1989-11-28 | Photomask inspection apparatus and photomask inspection method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30877089A JP3067142B2 (en) | 1989-11-28 | 1989-11-28 | Photomask inspection apparatus and photomask inspection method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03168640A true JPH03168640A (en) | 1991-07-22 |
| JP3067142B2 JP3067142B2 (en) | 2000-07-17 |
Family
ID=17985093
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP30877089A Expired - Fee Related JP3067142B2 (en) | 1989-11-28 | 1989-11-28 | Photomask inspection apparatus and photomask inspection method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3067142B2 (en) |
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|---|---|---|---|---|
| JP2007071888A (en) * | 2006-11-24 | 2007-03-22 | Hoya Corp | Method and device for inspecting defect of photomask |
| WO2007052699A1 (en) * | 2005-11-04 | 2007-05-10 | Nikon Corporation | Analyzing apparatus, processing apparatus, measuring instrument, exposure apparatus, substrate processing system, analysis method, and program |
| US20130271945A1 (en) | 2004-02-06 | 2013-10-17 | Nikon Corporation | Polarization-modulating element, illumination optical apparatus, exposure apparatus, and exposure method |
| US9341954B2 (en) | 2007-10-24 | 2016-05-17 | Nikon Corporation | Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method |
| US9423698B2 (en) | 2003-10-28 | 2016-08-23 | Nikon Corporation | Illumination optical apparatus and projection exposure apparatus |
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