JPH0269938A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPH0269938A JPH0269938A JP22280688A JP22280688A JPH0269938A JP H0269938 A JPH0269938 A JP H0269938A JP 22280688 A JP22280688 A JP 22280688A JP 22280688 A JP22280688 A JP 22280688A JP H0269938 A JPH0269938 A JP H0269938A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- resist
- semiconductor device
- resist film
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 14
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 238000000034 method Methods 0.000 claims description 12
- 239000007921 spray Substances 0.000 abstract description 5
- 239000003960 organic solvent Substances 0.000 abstract description 4
- 230000002093 peripheral effect Effects 0.000 abstract description 2
- 238000005336 cracking Methods 0.000 abstract 1
- 239000000428 dust Substances 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
Landscapes
- Mechanical Treatment Of Semiconductor (AREA)
- Formation Of Insulating Films (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体装置の製造方法に関し、特に半導体ウェ
ハーの裏面を研削するためのレジスト保護膜の形成方法
に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for manufacturing a semiconductor device, and particularly to a method for forming a resist protective film for grinding the back surface of a semiconductor wafer.
従来、半導体ウェハー（以下単にウェハーという）の表
面に素子を形成したのちその裏面を研削する場合は、ウ
ェハー表面へレジストを塗布して行なわれるが、この塗
布は、スピン・コーターによる滴下方式で行なわれてい
た。Conventionally, when elements are formed on the front surface of a semiconductor wafer (hereinafter simply referred to as a wafer) and the back surface is ground, a resist is applied to the wafer surface, but this application is performed using a dripping method using a spin coater. It was.
第３図は従来のスピン・コーターによって形成されたレ
ジスト膜を有するウェハ一端部の断面図である。FIG. 3 is a cross-sectional view of one end of a wafer having a resist film formed by a conventional spin coater.
第３図に示したように、スピン・コーターにより形成さ
れたレジスト膜２はウェハー１の端部において厚くなり
、しかもその一部はウェハー１の表面から裏面へまわり
込んで形成されていた。As shown in FIG. 3, the resist film 2 formed by the spin coater was thick at the edge of the wafer 1, and a portion of the resist film 2 was formed extending from the front surface to the back surface of the wafer 1.
前述した従来の半導体装置の製造方法におけるスピン・
コーターによるレジスト膜の形成方法ては、第３図に示
した様に、回転中の遠心力によりウェハー１の周辺にレ
ジス１〜が溜った状態で形成されるため、ウェハー１の
周辺か盛り上ったり、ウェハー裏面にレジストが回り込
んだりする為、後工程の裏面研削において、回り込んだ
レジストにより砥石が目つまりしてウェハーが割れたり
、盛り」二つなレジストによりウェハーが歪んで、割れ
や、クラックが発生ずる欠点がある。Spin and spin in the conventional semiconductor device manufacturing method mentioned above
As shown in Fig. 3, the method of forming a resist film using a coater is that the resist 1~ is formed in a state where it accumulates around the wafer 1 due to the centrifugal force during rotation. In addition, the resist wraps around to the back side of the wafer, so during back grinding in the subsequent process, the grinding wheel gets clogged by the resist that wraps around, causing the wafer to crack. It also has the disadvantage of causing cracks.
この対策としてレジスト膜を薄く形成する方法が用いら
れているが、レジスト膜が薄い場合は付着するごみ等の
粒子による割れやクラックが発生したり、さらにウェハ
ーの素子側表面の凹凸の激１〜いものはレシス１〜方式
では研削出来ないという欠点があった。As a countermeasure against this problem, a method of forming a thin resist film is used, but if the resist film is thin, cracks or cracks may occur due to adhering particles such as dust, and the unevenness of the surface of the wafer on the element side may become severe. There was a drawback that it was not possible to grind objects using the Resis 1 method.
本発明の半導体装置の製造方法は、半導体ウェハーの表
面に素子を形成したのち該ウェハーの裏面を研削するた
めにウェハー表面にレジスト膜を形成する半導体装置の
製造方法であって、前記ウェハ〜の周縁部に形成された
レジスト膜を除去したのちウェハーの裏面を研削するも
のである。The method for manufacturing a semiconductor device of the present invention is a method for manufacturing a semiconductor device in which elements are formed on the surface of a semiconductor wafer and then a resist film is formed on the surface of the wafer in order to grind the back surface of the wafer. After removing the resist film formed on the peripheral edge, the back surface of the wafer is ground.
次に、本発明について図面を用いて説明する。 Next, the present invention will be explained using the drawings.
第１図（ａ）〜（ｃ）は本発明の一実施例を説明するた
めのウェハ一端部の断面図、第２図は本発明の一実施例
に用いるスピン コーターの断面図である。1A to 1C are cross-sectional views of one end of a wafer for explaining an embodiment of the present invention, and FIG. 2 is a cross-sectional view of a spin coater used in an embodiment of the present invention.
第２図において、チャンバー３内には下部がらウェハー
１の裏面端部に当る様に有機溶剤のスプレーノズル５か
取り付けられている。表面に素子が形成されたウェハー
１をスピンチャック６て真空固定し、チャック６を回転
させ、上方の、ノズル５によりレジス１〜を滴下し、そ
の後下方のスプレーノズル７から有機溶剤をスプレーし
、ウェハー１の裏面に回り込んだレジス１〜を除去する
。このようにして形成されたウェハー１の端部を第１図
（ａ）に示ず。In FIG. 2, an organic solvent spray nozzle 5 is installed in the chamber 3 so as to hit the back end of the wafer 1 from the bottom. The wafer 1 with elements formed on its surface is vacuum-fixed using a spin chuck 6, the chuck 6 is rotated, the resist 1 is dropped from the upper nozzle 5, and then an organic solvent is sprayed from the lower spray nozzle 7. The resist 1~ that has wrapped around the back surface of the wafer 1 is removed. The end portion of the wafer 1 thus formed is not shown in FIG. 1(a).
次に第１図（ｂ）に示ずように、コンタク１〜方式の露
光機によりウェハー１の周辺部を露光し、レジスト膜２
の露光部２Ａを形成する。Next, as shown in FIG. 1(b), the periphery of the wafer 1 is exposed to light using a contact 1~ method exposure machine, and the resist film 2 is exposed to light.
An exposed portion 2A is formed.
次に第１図（ｃ）に示すように、現像を行なう事により
ウェハー１の端部に形成されたレシス１−Ｍ２を除去す
る。以下従来と同様の操作によりウェハー１の裏面研削
を行なう。Next, as shown in FIG. 1(c), the resist 1-M2 formed at the end of the wafer 1 is removed by development. Thereafter, the back surface of the wafer 1 is ground by the same operations as in the conventional method.
このように本実施例によれは、スピン・コーターでウェ
ハー１上に形成されるレジス）−膜のうち、裏面に回り
込んだレジスト膜はスプレーノズル７からの有機溶剤に
より除去し、更にウェハー１の端部に厚く形成されたレ
ジスト膜２を露光・現象により除去できる。従って保護
膜としてのレジスｌ−ＩＩ！ ２をウェハー１の表面に
厚くしかも均一に形成することができるため、ウェハー
１の表面に大きな凹凸が形成されていたり、またごみ等
の粒子が付着した場合でもウェハーに割れやクラックが
発生することはなくなる。In this way, in this embodiment, among the resist films formed on the wafer 1 by the spin coater, the resist film that has wrapped around the back surface is removed by the organic solvent from the spray nozzle 7, and then the wafer 1 is The resist film 2 formed thickly at the end portions can be removed by exposure and phenomenon. Therefore, resist l-II as a protective film! 2 can be formed thickly and uniformly on the surface of the wafer 1, so even if large irregularities are formed on the surface of the wafer 1 or particles such as dust are attached, the wafer will not break or crack. will disappear.
以」−説明した様に本発明は、ウェハーの周縁部に形成
さたレジスト膜を除去したのちウェハーの裏面研削を行
うことにより、ごみや素子表面の凹凸に起因する半導体
ウェハーのクラックや割れの発生をなくすことができる
。従って半導体装置の製造歩留りは向上する。As explained above, the present invention removes the resist film formed on the periphery of the wafer and then grinds the backside of the wafer, thereby eliminating cracks and fractures in the semiconductor wafer caused by dust and unevenness on the surface of the elements. The occurrence can be eliminated. Therefore, the manufacturing yield of semiconductor devices is improved.
発明の一実施例て用いるスピン・コーターの断面図、第
３図は従来の半導体装置の製造方法を説明するためのウ
ェハ一端部の断面図である。FIG. 3 is a cross-sectional view of a spin coater used in one embodiment of the invention, and FIG. 3 is a cross-sectional view of one end of a wafer for explaining a conventional method of manufacturing a semiconductor device.
１・・・ウェハー、２・・・レジス）〜膜、２Ａ・・露
光部、３・・・チャンバー、４・・ダクト、５・・・ノ
ズル、６・・・スピンチャック、７・・スプレーノズル
。1... Wafer, 2... Regis) ~ film, 2A... Exposure section, 3... Chamber, 4... Duct, 5... Nozzle, 6... Spin chuck, 7... Spray nozzle .
Claims (1)
ーの裏面を研削するためにウェハー表面にレジスト膜を
形成する半導体装置の製造方法において、前記ウェハー
の周縁部に形成されたレジスト膜を除去したのちウェハ
ーの裏面を研削することを特徴とする半導体装置の製造
方法。In a method for manufacturing a semiconductor device in which a resist film is formed on the surface of a wafer in order to grind the back surface of the wafer after forming elements on the surface of the wafer, the resist film formed on the periphery of the wafer is removed and then the wafer is A method for manufacturing a semiconductor device, comprising: grinding the back surface of the semiconductor device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22280688A JPH0269938A (en) | 1988-09-05 | 1988-09-05 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22280688A JPH0269938A (en) | 1988-09-05 | 1988-09-05 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0269938A true JPH0269938A (en) | 1990-03-08 |
Family
ID=16788189
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22280688A Pending JPH0269938A (en) | 1988-09-05 | 1988-09-05 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0269938A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5258323A (en) * | 1992-12-29 | 1993-11-02 | Honeywell Inc. | Single crystal silicon on quartz |
| US7037758B2 (en) | 2002-08-22 | 2006-05-02 | Seiko Epson Corporation | Semiconductor device, method of manufacturing the same, circuit board and electronic apparatus |
| WO2014188879A1 (en) * | 2013-05-24 | 2014-11-27 | 富士電機株式会社 | Method for manufacturing semiconductor device |
| CN110890281A (en) * | 2018-09-11 | 2020-03-17 | 三菱电机株式会社 | Method for manufacturing semiconductor device |
-
1988
- 1988-09-05 JP JP22280688A patent/JPH0269938A/en active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5258323A (en) * | 1992-12-29 | 1993-11-02 | Honeywell Inc. | Single crystal silicon on quartz |
| US7037758B2 (en) | 2002-08-22 | 2006-05-02 | Seiko Epson Corporation | Semiconductor device, method of manufacturing the same, circuit board and electronic apparatus |
| WO2014188879A1 (en) * | 2013-05-24 | 2014-11-27 | 富士電機株式会社 | Method for manufacturing semiconductor device |
| CN105190844A (en) * | 2013-05-24 | 2015-12-23 | 富士电机株式会社 | Method for manufacturing semiconductor device |
| JP6004100B2 (en) * | 2013-05-24 | 2016-10-05 | 富士電機株式会社 | Manufacturing method of semiconductor device |
| JPWO2014188879A1 (en) * | 2013-05-24 | 2017-02-23 | 富士電機株式会社 | Manufacturing method of semiconductor device |
| US9972521B2 (en) | 2013-05-24 | 2018-05-15 | Fuji Electric Co., Ltd. | Method for manufacturing semiconductor device to facilitate peeling of a supporting substrate bonded to a semiconductor wafer |
| CN110890281A (en) * | 2018-09-11 | 2020-03-17 | 三菱电机株式会社 | Method for manufacturing semiconductor device |
| JP2020043216A (en) * | 2018-09-11 | 2020-03-19 | 三菱電機株式会社 | Method of manufacturing semiconductor device |
| CN110890281B (en) * | 2018-09-11 | 2023-08-18 | 三菱电机株式会社 | Method for manufacturing semiconductor device |
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