JPH0262549A - Spin developer - Google Patents
Spin developerInfo
- Publication number
- JPH0262549A JPH0262549A JP21409788A JP21409788A JPH0262549A JP H0262549 A JPH0262549 A JP H0262549A JP 21409788 A JP21409788 A JP 21409788A JP 21409788 A JP21409788 A JP 21409788A JP H0262549 A JPH0262549 A JP H0262549A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- nozzle
- developer
- liquid
- dripping
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000007788 liquid Substances 0.000 claims abstract description 41
- 230000002093 peripheral effect Effects 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 abstract description 14
- 238000004140 cleaning Methods 0.000 abstract description 8
- 230000000694 effects Effects 0.000 abstract description 5
- 235000012431 wafers Nutrition 0.000 description 36
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 101100327917 Caenorhabditis elegans chup-1 gene Proteins 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Landscapes
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
[産業上の利用分野]
本発明はレジスト等感光剤の現像を行うスピンデベロッ
パに関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a spin developer for developing a photosensitive agent such as a resist.
[従来の技術及び発明が解決すべき課題]従来ウェハ上
に半導体集積回路素子のパターンを形成するホトレジス
ト処理工程はウェハ上に形成されたシリコンのP形結晶
あるいはN形結晶膜上に感光性を有するレジストを塗布
する塗布工程と、これに所望のパターンを描いたマスク
をのせ露光する露光工程と、露光により感光したレジス
トを現像液で処理することにより余分なレジストを除去
する現像工程とから成り、これらの工程を繰り返しなが
らP形結晶、N形結晶を積層して所望の回路素子を形成
している。[Prior Art and Problems to be Solved by the Invention] Conventionally, the photoresist processing process for forming a pattern of semiconductor integrated circuit elements on a wafer involves applying a photosensitive layer to the silicon P-type crystal or N-type crystal film formed on the wafer. The process consists of a coating process in which a resist with a desired pattern is applied, an exposure process in which a mask with a desired pattern is placed on it and exposed to light, and a development process in which the exposed resist is treated with a developer to remove excess resist. By repeating these steps, P-type crystals and N-type crystals are stacked to form a desired circuit element.
このような工程の装置において、レジストを塗布するコ
ータ及び露光工程検感光したレジストを現像液で処理し
て不要部分のレジストを除去するデベロッパでは、第2
図の断面図に示すように高速回転するスピンモータ1に
固定されたスピンチャック2上にウェハWを載置し、回
転するウェハWにコータの場合はレジストをデベロッパ
の場合は現像液を滴下口3より滴下させ均一な膜を成形
させるスピン式がある。滴下口3は固定されているもの
もあるがスピンチャック2上の処理中でないウェハ上に
ボタ落ぢを防止するため処理中以外は水平移動してウェ
ハ上を避けて3′の位置に待機させている。このような
構造のデベロッパにおいて、現像液を滴下させ現像処理
が行われた後、現像を停止させると共に現像液の洗浄の
ためリン入処理を行う、リンス液も同様にスピンチャッ
ク2上のウェハWをスピンモータ1により回転させなが
らノズル4よりリンス液を吐出させる。カップ5で受け
た排液はドレイン管6を通り気体はニゲシーストパイプ
7により排液から分離されて排気される。このようなリ
ンス処理において、近年のようにIM、4M、16Mと
高集積化に伴いわずかなムラでも特性に影響するため、
超均−性が要求されている。ウェハWをスピンモータ1
で回転させながらリンス液を吐出させてもリンス液がウ
ェハW上に全面均一に行き渡らず洗浄にむらが生じ、満
足なリンス効果を得ることができないという欠点があっ
た。In equipment for such processes, the coater that applies the resist and the developer that processes the exposed and exposed resist with a developer to remove unnecessary portions of the resist are equipped with a second
As shown in the cross-sectional view of the figure, a wafer W is placed on a spin chuck 2 fixed to a spin motor 1 that rotates at high speed, and a resist in the case of a coater and a developer in the case of a developer are dripped onto the rotating wafer W. There is a spin-type method in which a uniform film is formed by dropping the film from No. 3. The dripping port 3 is fixed in some cases, but in order to prevent droplets from dropping onto the wafer that is not being processed on the spin chuck 2, it is moved horizontally except during processing and is kept at position 3', avoiding the top of the wafer. ing. In a developer having such a structure, after the developer is dropped and the development process is performed, the development is stopped and the rinsing process is performed to clean the developer. The rinsing liquid is discharged from the nozzle 4 while being rotated by the spin motor 1. The drained liquid received by the cup 5 passes through a drain pipe 6, and the gas is separated from the drained liquid by a drain pipe 7 and exhausted. In this type of rinsing process, even the slightest unevenness can affect the characteristics due to the recent trend toward higher integration such as IM, 4M, and 16M.
Super uniformity is required. Spin wafer W with motor 1
Even if the rinsing liquid is discharged while rotating the wafer W, the rinsing liquid is not evenly distributed over the entire surface of the wafer W, resulting in uneven cleaning, which has the disadvantage that a satisfactory rinsing effect cannot be obtained.
本発明は以上のような欠点を解消し、ウェハ表面上全体
に均一な洗浄が可能なスピンデベロッパを提供すること
を目的とする。An object of the present invention is to eliminate the above-mentioned drawbacks and provide a spin developer that can uniformly clean the entire wafer surface.
[発明の概要]
本発明のスピンデベロッパは、現像処理後リンスノズル
からリンス液を被洗浄体に供給して現像液を洗浄するス
ピンデベロッパにおいて、前記被洗浄体の中心部に前記
リンス液を流出させる第1のノズルと、前記被洗浄体の
周辺部に前記リンス液を流出させる第2のノズルとを備
えたことを特徴とする。[Summary of the Invention] The spin developer of the present invention is a spin developer that cleans the developing solution by supplying a rinsing liquid from a rinsing nozzle to an object to be cleaned after development processing, and in which the rinsing liquid flows out into the center of the object to be cleaned. and a second nozzle that causes the rinsing liquid to flow out to a peripheral area of the object to be cleaned.
[実施例]
本発明のスピンデベロッパの一実施例を第1図を参照し
て説明する。[Embodiment] An embodiment of the spin developer of the present invention will be described with reference to FIG.
第1図はスピンデベロッパの断面図を示す図であり露光
処理済ウェハWを支持するスピンチャック9はスピンモ
ータ8に固定され、スピンモータ8の回転をウェハWに
伝達するため、真空吸着でウェハWを支持する。露光処
理後、ポジ型レジストでもネガ型レジストでも余分なレ
ジストを除去するための現像液を滴下する滴下口10は
支持体11により支持され、処理中以外はボタ落を防止
するためウェハWから逃げた位Ill O’に待機する
ようになっている。過剰な現像液を受けるカップ12に
ドレイン管13が接続され、さらに気体を排液から分離
して排気するニゲシーストパイプ14が設けられる。現
像液の処理後、現像液を洗浄するリンス液を噴出するノ
ズルは2本具えられ、ウェハWの中心部15″にリンス
液を吐出するような第1のノズル15が設けられ、ウェ
ハWの周辺部16′にリンス液を吐出するような角度を
つけて第2のノズル16が設けられる。第1のノズル1
5及び第2のノズル16は共にボタ落ち防止のためノズ
ル先端が被洗浄体であるウェハW平面の上方より外れた
位置に設けられる。処理前後のウェハの搬送のためにカ
ップには垂直駆動機構(図示せず)に接続され点線の位
置12’ まで下降し、それに伴い水平駆動機構(図示
せず)により移動される搬送ベルト17がウェハWを両
側から載置して搬送する構成になっている。FIG. 1 is a cross-sectional view of the spin developer. A spin chuck 9 that supports an exposed wafer W is fixed to a spin motor 8, and in order to transmit the rotation of the spin motor 8 to the wafer W, the wafer is moved by vacuum suction. I support W. After exposure processing, a dripping port 10 through which a developer is dropped to remove excess resist, whether it is a positive resist or a negative resist, is supported by a support 11, and the dripping port 10 escapes from the wafer W to prevent droplets from falling during processing. It is designed to wait at Ill O'. A drain pipe 13 is connected to the cup 12 for receiving excess developer, and a drain pipe 14 is further provided for separating and exhausting gas from the waste liquid. Two nozzles are provided for spouting a rinsing liquid for cleaning the developing liquid after the processing of the developing liquid. A second nozzle 16 is provided at an angle such that it discharges a rinse liquid into the peripheral portion 16'.The first nozzle 1
Both the nozzle 5 and the second nozzle 16 are provided at positions where the tips of the nozzles are located above the plane of the wafer W, which is the object to be cleaned, in order to prevent droplets from dropping. For transporting wafers before and after processing, a transport belt 17 connected to a vertical drive mechanism (not shown) descends to a position 12' indicated by a dotted line and is moved by a horizontal drive mechanism (not shown) is attached to the cup. The configuration is such that the wafer W is placed and transported from both sides.
以上のような構成のスピンデベロッパの作用を説明する
。所望のパターンを形成するため感光性のレジストが塗
布されたウェハを所望のパターンを描いたマスクをのせ
露光処理した後、ウェハWはスピンデベロッパにローデ
ィングされる。このデベロッパでは現像工程の処理を行
う。現像工程は必要ならばボストエクスポージャーベー
ク等の現像前ベーク装置により現像前処理後ウェハWは
搬送ベルト17で搬送され、カップが12″の位置にあ
る状態でスピンチャック9上に支持される。The operation of the spin developer configured as above will be explained. In order to form a desired pattern, a wafer coated with a photosensitive resist is placed on a mask with a desired pattern and subjected to exposure processing, and then the wafer W is loaded into a spin developer. This developer performs the developing process. If necessary, the wafer W is transported by a transport belt 17 and supported on a spin chuck 9 with the cup at the 12'' position.
搬送ベルト17が水平機構によりカップ12外に移動す
るとカップ12は上昇し、現像液滴下のため滴下口は1
0′の位置から10の位置に移動し。When the conveyor belt 17 moves to the outside of the cup 12 by the horizontal mechanism, the cup 12 rises, and the drip opening opens to 1 for the developer to drip.
Move from position 0' to position 10.
スピンモータ8の回転により回転するウェハW上に現像
液を滴下させる。ウェハW上全体に現像液が供給される
と滴下口10は現像液滴下を終了し、10″の位置に移
動する。過剰の現像液はカップ12で集められドレイン
管13より排水される。The developer is dropped onto the wafer W which is rotated by the rotation of the spin motor 8. When the developer is supplied to the entire surface of the wafer W, the dripping port 10 finishes dropping the developer and moves to the 10'' position. Excess developer is collected in the cup 12 and drained through the drain pipe 13.
その後現像を停止させると共に現像液洗浄のため再びウ
ェハWを回転させながらリンス液を第1のノズル15及
び第2のノズル16より吐出させリンス処理を行う。こ
の時第1のノズル15はウェハの中心部15′に向け、
第2のノズル16はウェハの周辺部16″に向はリンス
液を噴出するようになっているため、全面均一にリンス
液を行き渡らせると共に過剰なリンス液を必要とせず、
しかも十分なリンス効果を得ることができる。カツプ1
2に受けたリンス液はドレイン管13により排水する。Thereafter, the development is stopped, and the rinsing liquid is discharged from the first nozzle 15 and the second nozzle 16 while the wafer W is rotated again to clean the developing solution. At this time, the first nozzle 15 is directed toward the center 15' of the wafer,
The second nozzle 16 is designed to eject the rinsing liquid toward the periphery 16'' of the wafer, so that the rinsing liquid can be evenly distributed over the entire surface and there is no need for excessive rinsing liquid.
Moreover, a sufficient rinsing effect can be obtained. Cup 1
The rinsing liquid received in 2 is drained through a drain pipe 13.
一連の現像処理後再びカップ12は12′の位置に下降
し、搬送ベルト17が水平移動して処理済ウェハWを載
置して次の処理であるポストベーク装置等のホトレジス
ト膜中又は表面に残留した現像液、リンス液を蒸発除去
しホトレジスト硬化、ウェハとの密着性強化のための熱
処理装置へ搬送する。After a series of development processes, the cup 12 is lowered again to the position 12', and the conveyor belt 17 moves horizontally to place the processed wafer W into the photoresist film or on the surface of the post-bake device for the next process. The remaining developer and rinse solution are removed by evaporation, and the photoresist is transported to a heat treatment device for curing the photoresist and strengthening its adhesion to the wafer.
以上説明した本発明のデベロッパは一実施例であって、
本発明は上記実施例に限定されない。即ち、本発明の他
の実施例として、現像液の滴下口の支持体に、滴下口を
支持するレールの他にリンス液のノズルを支持するもう
一本のレールを設けてもよい、この場合も、ノズルを支
持するレールには2個の吐出口を設け、1つはウェハの
中心部に、他の1つはウェハの周辺部にリンス液が吐出
されるよう角度を持って設ければよい。この場合も処理
中以外の時は吐出口がウェハW上にないよう水平移動し
てウェハWを外れた位置で待機するようにすればよい。The developer of the present invention described above is one embodiment,
The invention is not limited to the above embodiments. That is, as another embodiment of the present invention, the support for the developer dripping port may be provided with another rail that supports the rinsing liquid nozzle in addition to the rail that supports the dripping port. However, if the rail supporting the nozzle has two discharge ports, one at the center of the wafer and the other at an angle so that the rinsing liquid is discharged at the periphery of the wafer. good. In this case as well, the ejection port may be moved horizontally so that it is not on the wafer W and waits at a position outside the wafer W when processing is not in progress.
さらにリンス液は間欠的に噴射してもよいし、洗浄時リ
ンス液又はウェハに超音波をかけるなどすると洗浄効果
はさらに高い。Further, the rinsing liquid may be injected intermittently, and the cleaning effect can be further improved by applying ultrasonic waves to the rinsing liquid or the wafer during cleaning.
[発明の効果]
以上説明したように本発明のデベロッパによればリンス
液を供給するノズルを1つはウェハの中心部に、1つは
ウェハの周辺部にリンス液が供給される角度に設けたた
め、リンス液がウェハ全体にむらなく供給され、しかも
無駄なリンス液を使用することなく最少限のリンス液使
用で効果的な洗浄を実現できる。このため品質も一定に
短時間に処理ができ費用も削減できる。[Effects of the Invention] As explained above, according to the developer of the present invention, one nozzle for supplying the rinsing liquid is provided at the center of the wafer, and one is provided at an angle such that the rinsing liquid is supplied to the periphery of the wafer. Therefore, the rinsing liquid is evenly supplied to the entire wafer, and moreover, effective cleaning can be achieved with a minimum amount of rinsing liquid without wasting the rinsing liquid. Therefore, the quality can be maintained at a constant level, processing can be done in a short time, and costs can be reduced.
第1図は本発明のスピンデベロッパの断面図、第2図は
従来の装置の断面台を示す図である。
8・・・・・・スピンモータ
9・・・・・・スピンチャック
10・・・・滴下口
15・・・・第1のノズル
16・・・・第2のノズル
15′・・・中心部
16′・・・周辺部
W・・・・・・ウェハ(被洗浄体)FIG. 1 is a sectional view of a spin developer according to the present invention, and FIG. 2 is a diagram showing a sectional table of a conventional device. 8... Spin motor 9... Spin chuck 10... Dripping port 15... First nozzle 16... Second nozzle 15'... Center part 16'...Peripheral part W...Wafer (object to be cleaned)
Claims (1)
して現像液を洗浄するスピンデベロッパにおいて、前記
被洗浄体の中心部に前記リンス液を流出させる第1のノ
ズルと、前記被洗浄体の周辺部に前記リンス液を流出さ
せる第2のノズルとを備えたことを特徴とするスピンデ
ベロッパ。In a spin developer that cleans the developing solution by supplying a rinsing liquid from a rinsing nozzle to an object to be cleaned after development processing, the spin developer includes a first nozzle that flows out the rinsing liquid to the center of the object to be cleaned; A spin developer comprising: a second nozzle for causing the rinsing liquid to flow out to a peripheral portion.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63214097A JP2692887B2 (en) | 1988-08-29 | 1988-08-29 | Spin developer, resist processing apparatus and resist processing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63214097A JP2692887B2 (en) | 1988-08-29 | 1988-08-29 | Spin developer, resist processing apparatus and resist processing method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH0262549A true JPH0262549A (en) | 1990-03-02 |
JP2692887B2 JP2692887B2 (en) | 1997-12-17 |
Family
ID=16650175
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP63214097A Expired - Lifetime JP2692887B2 (en) | 1988-08-29 | 1988-08-29 | Spin developer, resist processing apparatus and resist processing method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2692887B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09152718A (en) * | 1995-11-28 | 1997-06-10 | Dainippon Screen Mfg Co Ltd | Developing device |
CN111045299A (en) * | 2020-01-02 | 2020-04-21 | 长江存储科技有限责任公司 | Developing and edge-washing equipment and developing and edge-washing method |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005327807A (en) * | 2004-05-12 | 2005-11-24 | Sony Corp | Sheet type washing apparatus and its washing method |
KR102583342B1 (en) * | 2020-10-22 | 2023-09-26 | 세메스 주식회사 | Apparatus for processing substrate |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56148831A (en) * | 1980-04-22 | 1981-11-18 | Nec Corp | Developing device for semiconductor wafer |
JPH01214863A (en) * | 1988-02-23 | 1989-08-29 | Toshiba Corp | Developing device |
-
1988
- 1988-08-29 JP JP63214097A patent/JP2692887B2/en not_active Expired - Lifetime
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56148831A (en) * | 1980-04-22 | 1981-11-18 | Nec Corp | Developing device for semiconductor wafer |
JPH01214863A (en) * | 1988-02-23 | 1989-08-29 | Toshiba Corp | Developing device |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09152718A (en) * | 1995-11-28 | 1997-06-10 | Dainippon Screen Mfg Co Ltd | Developing device |
CN111045299A (en) * | 2020-01-02 | 2020-04-21 | 长江存储科技有限责任公司 | Developing and edge-washing equipment and developing and edge-washing method |
CN111045299B (en) * | 2020-01-02 | 2023-07-21 | 长江存储科技有限责任公司 | Developing and edge washing equipment and developing and edge washing method |
Also Published As
Publication number | Publication date |
---|---|
JP2692887B2 (en) | 1997-12-17 |
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