JPH0255294A - Method for synthesizing diamond by vapor process - Google Patents
Method for synthesizing diamond by vapor processInfo
- Publication number
- JPH0255294A JPH0255294A JP20504488A JP20504488A JPH0255294A JP H0255294 A JPH0255294 A JP H0255294A JP 20504488 A JP20504488 A JP 20504488A JP 20504488 A JP20504488 A JP 20504488A JP H0255294 A JPH0255294 A JP H0255294A
- Authority
- JP
- Japan
- Prior art keywords
- diamond
- oxygen
- acetylene
- carbon
- raw material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010432 diamond Substances 0.000 title claims abstract description 73
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 70
- 238000000034 method Methods 0.000 title claims abstract description 23
- 230000002194 synthesizing effect Effects 0.000 title claims abstract description 7
- 238000002485 combustion reaction Methods 0.000 claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 239000002994 raw material Substances 0.000 claims abstract description 22
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 19
- 238000001556 precipitation Methods 0.000 claims description 27
- 239000007789 gas Substances 0.000 claims description 26
- 239000001301 oxygen Substances 0.000 claims description 26
- 229910052760 oxygen Inorganic materials 0.000 claims description 26
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 25
- 150000001875 compounds Chemical class 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 9
- 238000001308 synthesis method Methods 0.000 claims description 8
- 239000012808 vapor phase Substances 0.000 claims description 8
- 230000001590 oxidative effect Effects 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims 2
- 238000000151 deposition Methods 0.000 claims 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 abstract description 17
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 abstract description 17
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 abstract description 12
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 abstract description 6
- 238000006243 chemical reaction Methods 0.000 abstract description 6
- 239000001294 propane Substances 0.000 abstract description 6
- 210000003746 feather Anatomy 0.000 abstract description 3
- 238000000354 decomposition reaction Methods 0.000 abstract description 2
- 230000015572 biosynthetic process Effects 0.000 description 7
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 6
- 238000003786 synthesis reaction Methods 0.000 description 6
- 239000012071 phase Substances 0.000 description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- 239000002244 precipitate Substances 0.000 description 4
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 238000001069 Raman spectroscopy Methods 0.000 description 3
- 230000002950 deficient Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 235000019441 ethanol Nutrition 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical group CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910001315 Tool steel Inorganic materials 0.000 description 2
- 239000003082 abrasive agent Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010891 electric arc Methods 0.000 description 2
- -1 ethylene, propylene Chemical group 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 125000004430 oxygen atom Chemical group O* 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 1
- 229910000997 High-speed steel Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- 239000001273 butane Substances 0.000 description 1
- 229910002090 carbon oxide Inorganic materials 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 239000011195 cermet Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002170 ethers Chemical group 0.000 description 1
- QFXZANXYUCUTQH-UHFFFAOYSA-N ethynol Chemical group OC#C QFXZANXYUCUTQH-UHFFFAOYSA-N 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 239000002360 explosive Substances 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000005984 hydrogenation reaction Methods 0.000 description 1
- 238000002065 inelastic X-ray scattering Methods 0.000 description 1
- 125000000468 ketone group Chemical group 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- IJDNQMDRQITEOD-UHFFFAOYSA-N n-butane Chemical compound CCCC IJDNQMDRQITEOD-UHFFFAOYSA-N 0.000 description 1
- OFBQJSOFQDEBGM-UHFFFAOYSA-N n-pentane Natural products CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229930195734 saturated hydrocarbon Natural products 0.000 description 1
- 238000013341 scale-up Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 125000000383 tetramethylene group Chemical group [H]C([H])([*:1])C([H])([H])C([H])([H])C([H])([H])[*:2] 0.000 description 1
- 229930195735 unsaturated hydrocarbon Natural products 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は耐摩耗性、耐蝕性、高熱伝導性、高比弾性等の
特性を有し、研磨材、研削材、光学材料、超硬工具材、
摺動材、耐蝕材、音響振動材、刃先材用部材等に有用な
膜状1粒状のダイヤモンドの気相法合成法に関する。[Detailed Description of the Invention] [Field of Industrial Application] The present invention has characteristics such as wear resistance, corrosion resistance, high thermal conductivity, and high specific elasticity, and is suitable for use in abrasive materials, abrasive materials, optical materials, and cemented carbide tools. wood,
This invention relates to a vapor phase synthesis method for diamond in the form of a single particle in the form of a film useful for sliding materials, corrosion-resistant materials, acoustic vibration materials, cutting edge materials, etc.
ダイヤモンドの合成法としては、超高圧条件下での、鉄
、ニッケル系等の触媒による合成法や爆薬法による黒鉛
の直接変換法が従来より実施されている。Conventional methods for synthesizing diamond include a synthesis method using an iron- or nickel-based catalyst under ultra-high pressure conditions, and a direct conversion method of graphite using an explosive method.
近年低圧CVD法として、炭化水素又は窒素、酸素等を
含む有機化合物と水素との混合ガスを熱フィラメント、
マイクロ波プラズマ、高周波プラズマ、直流放電プラズ
マ、直流アーク放電等により励起状態としてダイヤモン
ドを合成する方法が開発されている。In recent years, as a low-pressure CVD method, a mixed gas of hydrogen and a hydrocarbon or an organic compound containing nitrogen, oxygen, etc. is heated through a hot filament.
Methods have been developed for synthesizing diamond in an excited state using microwave plasma, high-frequency plasma, DC discharge plasma, DC arc discharge, and the like.
さらに最近1本件出願人は燃焼炎中の非酸化性領域での
ダイヤモンドの合成法を開発し、特願昭63−7175
8号として出願しており、本件発明はこの改善法に当た
る。Furthermore, recently, the applicant has developed a method for synthesizing diamond in the non-oxidizing region of combustion flame, and filed a patent application No. 63-7175
No. 8 has been filed, and the present invention corresponds to this improvement method.
特願昭83−71758号の発明は、従来法に比べ、簡
易な手段で、しかも大面積の膜状ダイヤモンドをも生成
しうる気相合成法であって、その要点は炭素を含むダイ
ヤモンド析出用原料化合物を不完全燃焼領域を有するよ
うに燃焼させ、該不完全燃焼領域中、又は該領域の近傍
の非酸化性雰囲気中に、ダイヤモンド析出用基材を設置
し、基材温度をダイヤモンド析出温度に保持することに
より基材にダイヤモンドを析出させる方法である。The invention of Japanese Patent Application No. 83-71758 is a gas phase synthesis method that is simpler than conventional methods and can also produce a large area of film-like diamond. A raw material compound is combusted so as to have an incomplete combustion region, a substrate for diamond precipitation is placed in the non-oxidizing atmosphere in or near the incomplete combustion region, and the temperature of the substrate is set to the diamond precipitation temperature. This is a method in which diamond is deposited on the base material by holding the base material at a certain temperature.
この方法は炭素を含む原料化合物により燃焼炎を形成さ
せるのみで基材上にダイヤモンドを析出させることが可
能であり、従来のCVD法に比べ画期的にすぐれた方法
であるが実用化のためにはダイヤモンド析出速度のさら
なる増大や析出物の性状制御が強く望まれている。This method allows diamond to be deposited on a substrate simply by forming a combustion flame using a raw material compound containing carbon, and is a revolutionary method compared to the conventional CVD method, but it is difficult to put it into practical use. There is a strong desire to further increase the diamond precipitation rate and control the properties of the precipitates.
本件発明は、ダイヤモンドの析出速度および析出面積の
増加を促進することを目的とする。The object of the present invention is to promote an increase in the diamond precipitation rate and precipitation area.
本件発明者は特願昭f33−71758号として出願さ
れた発明すなわち燃焼炎法に関し、鋭意研究した結果、
ダイヤモンド析出用原料化合物として使用する炭素を含
む原料ガスまたはこれに混合するガスの少くとも一方を
予熱した後に不完全燃焼領域に導入することによりダイ
ヤモンドの析出速度が増大し、良質なダイヤモンドが析
出することを見出し、本件発明を完成するに至った。As a result of intensive research into the invention filed as Japanese Patent Application No. 71758/1983, namely the combustion flame method,
By preheating at least one of the carbon-containing raw material gas used as a raw material compound for diamond precipitation, or the gas mixed therein, and then introducing it into the incomplete combustion region, the diamond precipitation rate increases and high-quality diamonds are precipitated. This discovery led to the completion of the present invention.
すなわち1本件発明の要旨は炭素を含むダイヤモンド析
出用原料化合物を不完全燃焼領域を有するように燃焼さ
せて気相法ダイヤモンドを合成する方法において、炭素
を含むダイヤモンド析出用原料ガス又はこれに混合する
ガスの少なくとも一方を予熱させた後に不完全燃焼領域
に導入し。In other words, 1. The gist of the present invention is a method for synthesizing vapor-phase diamond by burning a carbon-containing raw material compound for diamond precipitation so as to have an incomplete combustion region, in which a carbon-containing raw material gas for diamond precipitation or mixed therewith is used. At least one of the gases is preheated and then introduced into the incomplete combustion zone.
該不完全燃焼領域中、又は該領域の近傍の非酸化性雰囲
気中に、ダイヤモンド析出用基材を設置し、基材温度を
ダイヤモンド析出温度に保持することにより基材にダイ
ヤモンドを析出させることを特徴とする気相法ダイヤモ
ンドの合成法にあり、また本発明の方法により合成され
るダイヤモンドにはダイヤモンドライクカーボンを含む
。A substrate for diamond precipitation is installed in the incomplete combustion region or in a non-oxidizing atmosphere in the vicinity of the region, and diamond is deposited on the substrate by maintaining the temperature of the substrate at the diamond precipitation temperature. The present invention is characterized by a vapor phase diamond synthesis method, and the diamond synthesized by the method of the present invention contains diamond-like carbon.
以下1本発明の詳細な説明する。The present invention will be explained in detail below.
本発明に使用するダイヤモンド合成用炭素源としてはメ
タン、エタン、プロパン、ブタン等の飽和炭化水素、エ
チレン、プロピレン、ブチレン。Carbon sources for diamond synthesis used in the present invention include saturated hydrocarbons such as methane, ethane, propane, butane, ethylene, propylene, and butylene.
アセチレン等の不飽和炭化水素、ベンゼン、スチレン等
の芳香族炭化水素、エチルアルコール等のアルコール類
、アセトン等のケトン基を含む化合物、ジエチルエーテ
ル等のエーテル類、その他アルデヒド化合物、含窒素化
合物、−酸化炭素等すべてが使用可能である。又、前述
の化合物は1種又は2種以上を混合して用いることがで
きる。Unsaturated hydrocarbons such as acetylene, aromatic hydrocarbons such as benzene and styrene, alcohols such as ethyl alcohol, compounds containing ketone groups such as acetone, ethers such as diethyl ether, other aldehyde compounds, nitrogen-containing compounds, - Carbon oxide etc. can all be used. Further, the above-mentioned compounds can be used alone or in combination of two or more.
これらの炭素源化合物に必要により酸素さらに非酸化性
ガスとしてHAt、 82、C01CO2、H2O2′
等のガスを混合し、含酸素又は非含酸素雰囲気中で燃焼
させる。These carbon source compounds are mixed with oxygen and a non-oxidizing gas such as HAt, 82, CO1CO2, H2O2', etc., if necessary, and burned in an oxygen-containing or non-oxygen-containing atmosphere.
さらに炭素源として固体の炭素、黒鉛等を前記化合物と
水素、酸素の混合ガスの燃焼炎中で、気化、燃焼、水素
化等の反応を介して炭素源として用いることも可能であ
る。又、その際、非酸化性ガスを混合することもできる
。Furthermore, it is also possible to use solid carbon, graphite, etc. as a carbon source through reactions such as vaporization, combustion, and hydrogenation in a combustion flame of a mixed gas of the compound, hydrogen, and oxygen. Moreover, at that time, a non-oxidizing gas can also be mixed.
本発明においては前記のダイヤモンド合成用原料ガス又
は(及び)混合ガスを予熱し、且つ不完全燃焼領域が存
在するように燃焼させて燃焼炎を形成させ、該不完全燃
焼領域中又は炎外の非酸化性でかつ炎の近傍のダイヤモ
ンド析出可能に励起された領域にダイヤモンド析出用基
材を存在させることが必要である。In the present invention, the raw material gas or (and) mixed gas for diamond synthesis is preheated and combusted so that an incomplete combustion region exists to form a combustion flame. It is necessary that the substrate for diamond precipitation be non-oxidizing and present in a region near the flame that is excited to allow diamond precipitation.
又、前記のダイヤモンド合成用原料ガスに酸素を添加し
、燃焼を酸素を含まない雰囲気、或は酸素を含む雰囲気
中でダイヤモンド析出状態に励起された不完全燃焼領域
を生成させる具体例とじては、例えば前者についてはア
ルゴン等の雰囲気中での燃焼を、又後者の例としては大
気開放中の燃焼を例示できる。Further, a specific example of adding oxygen to the raw material gas for diamond synthesis to generate an incomplete combustion region excited to a diamond precipitation state in an oxygen-free atmosphere or an oxygen-containing atmosphere is as follows: For example, the former can be exemplified by combustion in an atmosphere such as argon, and the latter can be exemplified by combustion in open air.
これらのダイヤモンドの気相合成において、本発明では
原料ガスまたは混合ガスの少なくとも一方を予熱するが
、予熱は炭素含有原料化合物から燃焼炎中で酸素との反
応で分解解離を促進!2、ラジカル化した活性種から例
えば、C,C2、C01C02、CH3などがダイヤモ
ンド相を形成するのを好適ならしめるものと推定される
。又、水素原子、酸素原子も形成され、ダイヤモンド析
出反応に関与しているものと思われる。このようにラジ
カル化した活性種及び水素原子、酸素原子の生成が原料
ガス又は混合ガスの予熱により一層増大するためにダイ
ヤモンドの析出速度の増加および質的向上が起ったもの
と考えられる。In the gas phase synthesis of these diamonds, in the present invention, at least one of the raw material gas or mixed gas is preheated, and preheating promotes decomposition and dissociation from the carbon-containing raw material compound through reaction with oxygen in a combustion flame! 2. It is estimated that radicalized active species such as C, C2, C01C02, CH3, etc. are suitable for forming a diamond phase. In addition, hydrogen atoms and oxygen atoms are also formed and are thought to be involved in the diamond precipitation reaction. It is considered that the formation of radicalized active species, hydrogen atoms, and oxygen atoms is further increased by the preheating of the raw material gas or mixed gas, resulting in an increase in the diamond precipitation rate and qualitative improvement.
例えば、アセチレン、スチレン、プロパン、エチルアル
コール、メチルアルコール、ベンゼン等の原料ガスを予
熱し2これに必要に応じて予熱を施した酸素を添加し、
大気開放系で燃焼炎を形成し、酸素添加量の調整により
不完全燃焼域の体積を制御することが可能である。この
場合のアセチレン−酸素炎の不完全燃焼域はアセチレン
フェザ−と呼ばれており、この体積は酸素/アセチレン
比と全ガス量および予熱温度により変化し、制御可能で
ある。特に酸素/アセチレン比は0.5〜2の範囲を用
いることができるが望ましくは0.75〜1.0の比で
ある。For example, a raw material gas such as acetylene, styrene, propane, ethyl alcohol, methyl alcohol, benzene, etc. is preheated, and preheated oxygen is added thereto as necessary.
It is possible to form a combustion flame in a system open to the atmosphere and control the volume of the incomplete combustion zone by adjusting the amount of oxygen added. The incomplete combustion region of the acetylene-oxygen flame in this case is called an acetylene feather, and its volume can be controlled by changing the oxygen/acetylene ratio, total gas amount, and preheating temperature. In particular, the oxygen/acetylene ratio can range from 0.5 to 2, but is preferably from 0.75 to 1.0.
予熱温度は50〜400℃の範囲が好ましい、50’C
!未満の場合は本発明の効果が不十分であり、 20
0℃を超える場合には爆発などの安全性の対処が必要と
なる。このため予熱温度は原料物質によるが予熱温度が
200℃以上の場合には発火点より30’0程度下廻る
温度での予熱が望ましい。The preheating temperature is preferably in the range of 50 to 400°C, 50'C
! If it is less than 20, the effect of the present invention is insufficient.
If the temperature exceeds 0°C, safety measures such as explosion are required. Therefore, the preheating temperature depends on the raw materials, but if the preheating temperature is 200° C. or higher, it is desirable to preheat at a temperature about 30'0 below the ignition point.
これらの場合のアセチレンフェザ−領域の温度は200
0〜3000℃であり、補助励起手段を必要としない、
一般的にはダイヤモンド合成温度は1500’C以上が
望ましい、基板温度は800−1200”0が適当であ
り、冷却することによりこの基板温度範囲に制御可能で
ある。The temperature of the acetylene feather region in these cases is 200
0-3000°C and does not require auxiliary excitation means,
Generally, the diamond synthesis temperature is preferably 1500'C or higher, and the substrate temperature is suitably 800-1200'0, and the substrate temperature can be controlled within this range by cooling.
上記の外に、ダイヤモンド合成用原料ガスを予熱し、酸
素を添加することなく、含酸素雰囲気中で燃焼させる方
法をとってもよい。In addition to the above method, a method may be used in which the raw material gas for diamond synthesis is preheated and burned in an oxygen-containing atmosphere without adding oxygen.
ダイヤモンド析出用基材は通常低圧CVD法で用いられ
るものが使用できる。即ちSiウェハーSiC焼結体、
SiC粒状物の外にW、WC,No、 Tic、T
iN、サーメット、超硬合金工具鋼、合金工具鋼、高速
度鋼等の形状物及び粒状物を例示できる。As the base material for diamond precipitation, those commonly used in low pressure CVD methods can be used. That is, Si wafer SiC sintered body,
Besides SiC granules, W, WC, No, Tic, T
Examples include shaped objects and granular objects such as iN, cermet, cemented carbide tool steel, alloy tool steel, and high-speed steel.
ダイヤモンドが析出する領域は燃焼炎中の通常内炎と称
される酸素不足の領域である。一般的に酸素過剰領域は
高熱で例えダイヤモンドが形成されても過剰の酸素によ
りC01C02となり消失する。すなわち、この領域で
はダイヤモンドは析出しないと考えられる。なお、ダイ
ヤモンド析出領域は酸素不足であり、比較的低温である
。そしてこの領域においては原料ガスより炭化水素ラジ
カル(活性種)の生成の条件に励起することが必要であ
る0本発明方法においてダイヤモンド析出用基材の位置
を炎中の300〜1200℃の範囲におくことが好まし
い。The region where diamonds are deposited is an oxygen-deficient region of the combustion flame, commonly referred to as the inner flame. In general, even if diamond is formed in an oxygen-excessive region under high heat, the diamond becomes C01C02 due to the excess oxygen and disappears. In other words, it is considered that diamond does not precipitate in this region. Note that the diamond precipitation region is oxygen deficient and has a relatively low temperature. In this region, it is necessary to excite the raw material gas to conditions that generate hydrocarbon radicals (active species). It is preferable to leave it there.
本発明では原料ガス等の予熱によりダイヤモンド析出領
域の励起は促進されほとんど補助加熱源は必要としない
が、補助加熱源として通電加熱による発熱体、高周波誘
導加熱、レーザー光による加熱方式、赤外線加熱、アー
ク放電による加熱等を用いてもよい。In the present invention, the excitation of the diamond precipitation region is promoted by preheating the raw material gas, etc., and almost no auxiliary heating source is required. Heating by arc discharge or the like may also be used.
以下、実施例、比較例を挙げ本発明をさらに詳しく説明
する。The present invention will be explained in more detail below with reference to Examples and Comparative Examples.
〔実施例1〕
第1図に示した概略図のようにアセチレンバーナーlを
下向きに固定し、バーナー火口よりloIの距離に8■
角厚さ2mmの超硬バイト製基板(WC−Go)2を水
冷支持台に固定した。[Example 1] As shown in the schematic diagram shown in Fig. 1, the acetylene burner l is fixed downward, and the acetylene burner l is fixed at a distance of loI from the burner mouth by 8mm.
A substrate made of carbide tool (WC-Go) 2 having a square thickness of 2 mm was fixed to a water-cooled support stand.
アセチレン2.017 +*in 、酸素1.5fL/
5in(酸素アセチレン比0.75)の流量を各々別の
電熱予熱器3により 140℃に予熱した後バーナーに
供給し大気中で燃焼炎を形成させた。基板温度は105
0℃であった。この状態で連続20分間燃焼させた。Acetylene 2.017 +*in, oxygen 1.5fL/
A flow rate of 5 inches (oxyacetylene ratio 0.75) was preheated to 140° C. by a separate electric preheater 3 and then supplied to a burner to form a combustion flame in the atmosphere. The substrate temperature is 105
It was 0°C. Burning was continued in this state for 20 minutes.
反応完了後、基板堆積物を金属、顕微鏡により観察を行
ったところ、ダイヤモンド結晶自形を有する膜で基板余
情が被覆されていることを確認した。又、端部の膜状ダ
イヤモンドの付き回りも良好であった。更にこのダイヤ
モンド膜の顕微レーザーラマン分光分析を行った結果、
ラマンシフト1333cm−1にダイヤモンド結合によ
る鋭いピークを示した。又、膜厚を測定したところ約4
フル謬で良質な膜であることが認められた。After the reaction was completed, the substrate deposit was observed using a metal microscope, and it was confirmed that the substrate was covered with a film having euhedral diamond crystals. Furthermore, the coverage of the diamond film at the end was also good. Furthermore, as a result of microscopic laser Raman spectroscopy analysis of this diamond film,
A sharp peak due to diamond bonding was shown at a Raman shift of 1333 cm-1. Also, when the film thickness was measured, it was approximately 4
It was recognized that the membrane was completely defective and of good quality.
実施例工の予熱器を除いた以外は全く同一の装置を用い
、バーナーに供給するアセチレンガス及び酸素ガスの温
度を室温(25℃)とする以外は同一の条件で燃焼試験
及び各種測定を行った。Combustion tests and various measurements were conducted using the same equipment as in the example construction except for the preheater, and under the same conditions except that the temperature of the acetylene gas and oxygen gas supplied to the burner was set to room temperature (25°C). Ta.
基板上の堆積物はダイヤモンド自形を有した膜状であり
、端部材き回りも実施例工とほぼ同じであるが、膜質が
実施例1よりは劣っていた。The deposit on the substrate was in the form of a film with a diamond shape, and the end member rotation was almost the same as in the example, but the film quality was inferior to that in Example 1.
又レーザーラマン分光で1333cm−’のダイヤモン
ドピークと1550cm−’付近に広がりのある低いピ
ークが認められたことにより、少量のi−カーボン成分
を含有するダイヤモンド膜であると認められた。尚、ダ
イヤモンドの膜厚は約34に田であった。In addition, laser Raman spectroscopy revealed a diamond peak at 1333 cm-' and a broad low peak around 1550 cm-', which confirmed that the film contained a small amount of i-carbon component. The thickness of the diamond film was approximately 34 mm.
〔実施例2〕
プロパン専用バーナーを実施例と同様に下向きに固定し
、バーナー火口より12vsの距離に超硬バイ) 13
mm角厚さ3■サイズの基板を水冷支持台に固定した。[Example 2] A dedicated propane burner was fixed downward as in the example, and a carbide bib was placed at a distance of 12vs from the burner mouth) 13
A substrate measuring 3 mm square and 3 mm thick was fixed to a water-cooled support.
バーナーにプロパン3.3文/l1in、酸素7文/I
IIn(酸素/プロパン比=2:1)を各々の予熱器で
170℃に加熱した後にバーナーに導入し、大気中で2
0分間燃焼させた。Propane in burner 3.3 liters/1in, oxygen 7 liters/I
IIn (oxygen/propane ratio = 2:1) was heated to 170 °C in each preheater and then introduced into the burner, and heated in the atmosphere for 2
Burned for 0 minutes.
燃焼完了後、基板上の堆積物を金属顕微鏡で観察したと
ころ、ダイヤモンド自形を有する膜状析出物であること
が認められた。又、X線回折とラマン分光測定によりi
−カーボン成分を極〈少量含むダイヤモンドであること
を確認した。この膜状析出物の厚さは25ILmであり
、基板端部への付き回りも良好であった。After the combustion was completed, the deposit on the substrate was observed with a metallurgical microscope, and it was found to be a film-like precipitate with a diamond euhedral shape. In addition, by X-ray diffraction and Raman spectroscopy measurements, i
- It was confirmed that the diamond contained a very small amount of carbon. The thickness of this film-like precipitate was 25 ILm, and it spread well to the edge of the substrate.
本発明方法は、極めて簡単な装置での気相法によるダイ
ヤモンド合成を可能とするものであり又スケールアップ
も容易となった。したがって大面積で均質なダイヤモン
ドの析出が可能となった。又、ダイヤモンド析出速度も
早く析出用基体は、板1粒いずれでも同様にダイヤモン
に析出が可能であり、又板表面が曲面であっても何ら析
出に支障はないので、本発明方法により、粒状、膜状の
良質なダイヤモンドを従来の気相燃焼炎法に比し、容易
にうろことが可能になった。The method of the present invention makes it possible to synthesize diamond by a gas phase method using extremely simple equipment, and it is also easy to scale up. Therefore, it became possible to deposit homogeneous diamond over a large area. In addition, the diamond precipitation rate is fast, and diamond can be deposited on a single plate in the same way even if the plate surface is curved. Compared to the conventional gas-phase combustion flame method, it is now possible to easily melt high-quality diamond in the form of a film.
第1図は本発明の実施するための代表的な装置である実
施例1の方法の概略図である。
1・・・・・・バーナー、 2・・・・・・基板3
・・・・・・予熱器
第1図
フ乞子しンがスラインFIG. 1 is a schematic diagram of the method of Example 1, which is a typical apparatus for carrying out the present invention. 1...Burner, 2...Substrate 3
・・・・・・Preheater diagram 1 is a beggar line.
Claims (1)
燃焼領域を有するように燃焼させて気相法ダイヤモンド
を合成する方法において、炭素を含むダイヤモンド析出
用原料ガス又はこれに混合するガスの少なくとも一方を
予熱させた後に不完全燃焼領域に導入し、該不完全燃焼
領域中、又は該領域の近傍の非酸化性雰囲気中に、ダイ
ヤモンド析出用基材を設置し、基材温度をダイヤモンド
析出温度に保持することにより基材にダイヤモンドを析
出させることを特徴とする気相法ダイヤモンドの合成法
。 2、炭素を含むダイヤモンド析出用原料化合物に酸素を
添加し、酸素を含まない雰囲気中で燃焼させることを特
徴とする特許請求の範囲第1項の気相法ダイヤモンドの
合成法。 3、炭素を含むダイヤモンド析出用原料化合物に酸素を
添加し、酸素を含む雰囲気中で燃焼させることを特徴と
する特許請求の範囲第1項の気相法ダイヤモンドの合成
法。 4、炭素を含むダイヤモンド析出用原料化合物に酸素を
添加することなく、酸素を含む雰囲気中で燃焼させるこ
とを特徴とする特許請求の範囲第1項の気相法ダイヤモ
ンドの合成法。[Claims] 1. In a method for synthesizing vapor-phase diamond by burning a carbon-containing raw material compound for diamond precipitation so as to have an incomplete combustion region, the raw material gas for diamond precipitation containing carbon or mixed therein; At least one of the gases is preheated and then introduced into an incomplete combustion region, a substrate for diamond precipitation is placed in a non-oxidizing atmosphere in or near the incomplete combustion region, and the substrate temperature is increased. A vapor phase diamond synthesis method characterized by depositing diamond on a base material by maintaining the diamond at a diamond precipitation temperature. 2. The vapor phase diamond synthesis method according to claim 1, characterized in that oxygen is added to a carbon-containing raw material compound for diamond precipitation, and the mixture is burned in an oxygen-free atmosphere. 3. The vapor phase diamond synthesis method according to claim 1, characterized in that oxygen is added to a carbon-containing raw material compound for diamond precipitation, and the mixture is burned in an oxygen-containing atmosphere. 4. The vapor phase diamond synthesis method according to claim 1, characterized in that the raw material compound for diamond precipitation containing carbon is burned in an oxygen-containing atmosphere without adding oxygen.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20504488A JPH0255294A (en) | 1988-08-18 | 1988-08-18 | Method for synthesizing diamond by vapor process |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20504488A JPH0255294A (en) | 1988-08-18 | 1988-08-18 | Method for synthesizing diamond by vapor process |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0255294A true JPH0255294A (en) | 1990-02-23 |
Family
ID=16500519
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP20504488A Pending JPH0255294A (en) | 1988-08-18 | 1988-08-18 | Method for synthesizing diamond by vapor process |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0255294A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02196097A (en) * | 1989-01-24 | 1990-08-02 | Sumitomo Electric Ind Ltd | Method for synthesizing diamond in vapor phase |
JPH02196094A (en) * | 1989-01-23 | 1990-08-02 | Nippon Steel Corp | Method for synthesizing diamond by combustion flame |
US5704976A (en) * | 1990-07-06 | 1998-01-06 | The United States Of America As Represented By The Secretary Of The Navy | High temperature, high rate, epitaxial synthesis of diamond in a laminar plasma |
-
1988
- 1988-08-18 JP JP20504488A patent/JPH0255294A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02196094A (en) * | 1989-01-23 | 1990-08-02 | Nippon Steel Corp | Method for synthesizing diamond by combustion flame |
JPH02196097A (en) * | 1989-01-24 | 1990-08-02 | Sumitomo Electric Ind Ltd | Method for synthesizing diamond in vapor phase |
US5704976A (en) * | 1990-07-06 | 1998-01-06 | The United States Of America As Represented By The Secretary Of The Navy | High temperature, high rate, epitaxial synthesis of diamond in a laminar plasma |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2597497B2 (en) | Synthesis method of vapor phase diamond | |
US5491028A (en) | Enhanced adherence of diamond coatings | |
EP0552249A1 (en) | Flame or plasma synthesis of diamond under turbulent and transition flow conditions | |
JPH0255294A (en) | Method for synthesizing diamond by vapor process | |
JP2597498B2 (en) | Synthesis method of vapor phase diamond | |
JP2754259B2 (en) | Combustion Flame Synthesis Method for Transparent Diamond | |
JPH02192491A (en) | Method for synthesizing diamond of vapor process | |
JP2752753B2 (en) | Synthesis method of diamond by combustion flame | |
JP2820604B2 (en) | Method and apparatus for synthesizing vapor phase diamond | |
JP2619557B2 (en) | Synthesis method of vapor phase diamond | |
JP2651773B2 (en) | Vapor phase diamond synthesis method and synthesis apparatus | |
JP2581330B2 (en) | Synthesis method of diamond by combustion flame | |
JP2680676B2 (en) | Synthesis method of vapor phase diamond | |
JPH02267193A (en) | Method for synthesizing diamond by combustion flame method and gas burner for synthesis | |
JPH0328373A (en) | Diamond-coated member and its production | |
JPH0393640A (en) | Production of diamond particle by continuous gas phase method | |
JP2839612B2 (en) | Synthesis method of vapor phase diamond | |
JP2633074B2 (en) | Vapor phase diamond synthesis equipment | |
JPH0667797B2 (en) | Diamond synthesis method | |
JP2786721B2 (en) | Synthesis method of diamond by combustion flame | |
JPH01203295A (en) | Method for synthesizing diamond by vapor phase method | |
JP3980138B2 (en) | Diamond manufacturing method | |
JP2833848B2 (en) | Synthesis method of vapor phase diamond | |
JPH0426595A (en) | Method for synthesizing diamond in vapor phase | |
JPH01275498A (en) | Production of diamond film |