JPH0234854A - Mask, exposing device, and semiconductor element - Google Patents
Mask, exposing device, and semiconductor elementInfo
- Publication number
- JPH0234854A JPH0234854A JP1013905A JP1390589A JPH0234854A JP H0234854 A JPH0234854 A JP H0234854A JP 1013905 A JP1013905 A JP 1013905A JP 1390589 A JP1390589 A JP 1390589A JP H0234854 A JPH0234854 A JP H0234854A
- Authority
- JP
- Japan
- Prior art keywords
- mask
- phase difference
- illumination light
- pattern
- stepwise
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 8
- 238000005286 illumination Methods 0.000 claims description 40
- 239000000758 substrate Substances 0.000 claims description 13
- 238000005530 etching Methods 0.000 claims description 7
- 239000012535 impurity Substances 0.000 claims description 3
- 239000010409 thin film Substances 0.000 claims description 2
- 230000005540 biological transmission Effects 0.000 claims 2
- 230000004304 visual acuity Effects 0.000 abstract description 2
- 230000001678 irradiating effect Effects 0.000 abstract 2
- 230000007547 defect Effects 0.000 abstract 1
- 230000010363 phase shift Effects 0.000 description 18
- 238000010586 diagram Methods 0.000 description 11
- 238000009826 distribution Methods 0.000 description 10
- 238000000034 method Methods 0.000 description 10
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- 230000000694 effects Effects 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 235000014676 Phragmites communis Nutrition 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Landscapes
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、縮小投影露光装置で使用するマスクの改良に
係り、特に微細パターンを転写するのに好適なマスクお
よび投影露光装置並びに半導体素子に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an improvement of a mask used in a reduction projection exposure apparatus, and particularly relates to a mask suitable for transferring a fine pattern, a projection exposure apparatus, and a semiconductor element. .
半導体素子等の回路パターンが描かれたマスク（以下、
レティクルと称す）を照明光学系で照明し、回路パター
ンをウェーハ上に転写する縮小投影露光装置には、転写
可能なパターンが微細化できることが要求される。縮小
投影露光装置の解像限界付近の微細パターンを転写する
一手法として、レティクル上の微細な遮光部分を隔てて
隣接する更に、従来の位相差を与えるレティクルについ
ては、アイ・イー・イー・イー トランザクションオン
エレクトロン デバイス２９ （１９８２年）第１２
８２頁以下（Ｉ ＥＥＥ、 Ｔｒａｎｓ、 ｏｎＥ １
ｅｃｔｒｏｎ Ｄｅｖｉｃｅｓ、 Ｖｏｌ、 Ｅ Ｄ−
２９Ｎｏ、 １２（１９８２）Ｐ、１２８２〜）におけ
るマークデイ−レヴエンソン（Ｍａｒｅ、 Ｄ 、 Ｌ
ａｖｅｎｓｏｎ）等による” Ｉ ＋＊ｐｒｏｖｉｎｇ
Ｒｅ５ｏｌｕｔｉｏｎ ｉｎＰｈｏｔｏｌｉｔｈｏｇ
ｒａｐｈｙ ｗｉｔｈ ａ Ｐｈａｓｅ−８ｈｉｆｔｉ
ｎｇＭａｓｋ”と題する論文に論じられている。上記の
文献で提案しているレティクルは、遮光部分を隔てて隣
接する開口部分を透過する照明光に１８０°の位相差を
与えるものであり、投影露光装置で得られる周期的に並
ぶパターンの解像力を向上させるのに好適なものである
。A mask with a circuit pattern of a semiconductor element, etc. (hereinafter referred to as
A reduction projection exposure apparatus that illuminates a reticle (referred to as a reticle) with an illumination optical system and transfers a circuit pattern onto a wafer is required to be able to miniaturize the pattern that can be transferred. As a method for transferring fine patterns near the resolution limit of a reduction projection exposure system, IE. Transaction on Electron Device 29 (1982) No. 12
82 pages or less (IEEE, Trans, onE 1
ectron Devices, Vol, ED-
29 No. 12 (1982) P, 1282-)
avenson) et al.
Re5solution inPhotolithog
raphy with a Phase-8hifti
The reticle proposed in the above-mentioned document gives a 180° phase difference to the illumination light that passes through adjacent apertures across a light-shielding part, and is used for projection exposure. This is suitable for improving the resolution of periodically arranged patterns obtained by the apparatus.
しかし、上記方法は隣接する開口部が互いに分離してい
る時にのみ有効である。隣接している開口部がある部分
で接続している場合は、連続した開口部であるために位
相差を与えることができない。したがって、隣接してい
る開口部がある部分で接続している微細パターンから構
成される半導体素子を上記位相差を導入したマスクを用
いて製作することはできない。However, the above method is effective only when adjacent openings are separated from each other. If adjacent openings are connected at a certain portion, it is not possible to provide a phase difference because the openings are continuous. Therefore, it is not possible to manufacture a semiconductor element composed of fine patterns in which adjacent openings are connected at certain portions using a mask that introduces the above-mentioned phase difference.
実際の半導体素子回路パターンでは、例えば隣接する線
状の開ロバターンが端部で接続している場合がある。従
来の位相差を与える手法では、この接続部分で照明光の
位相が急変するため、線状のパターンが隣接する部分で
はそのパターンは解像するものの、接続する部分でもパ
ターンが分離してしまう。このため、ウェーハ上で所望
の形状のパターンが得られないという問題があった。In an actual semiconductor device circuit pattern, for example, adjacent linear open patterns may be connected at their ends. In the conventional method of providing a phase difference, the phase of the illumination light changes suddenly at this connection part, so although the patterns can be resolved in the part where the linear patterns are adjacent to each other, the patterns also separate in the part where they are connected. For this reason, there was a problem in that a pattern with a desired shape could not be obtained on the wafer.
本発明のｔｓ題は、隣接する開ロバターンがある部分で
接続しているような微細パターンについても正確に転写
可能であるようなマスク（レティクル）および、投影露
光装置並びに上記微細パターンから構成される半４体素
子を提供することにある。The ts problem of the present invention is a mask (reticle) that can accurately transfer even a fine pattern in which adjacent open patterns are connected at a certain part, a projection exposure device, and the fine pattern. The object of the present invention is to provide a semi-quadram element.
上記課題は、開ロバターンを透過する照明光の位相差を
開ロバターン内部で連続的に、あるいは段階的に変化さ
せるように構成することにより、達成される。照明光の
位相差を与える方法として、透明な薄膜を設ける方法、
マスク基板をエツチングする方法、マスク基板に不純物
を注入して屈折率を変える方法がある。The above object is achieved by configuring the device to change the phase difference of the illumination light passing through the open rotor continuously or stepwise inside the open rotor. A method of providing a transparent thin film as a method of providing a phase difference of illumination light,
There are methods of etching the mask substrate and methods of implanting impurities into the mask substrate to change the refractive index.
レティクル上の隣接する開口部に１８０’の位相差を与
えることにより解像力が向上する。また、隣接する開口
部が一端で接続している部分は、この接続部付近で位相
を連続的あるいは段階的に変化させることにより、パタ
ーンを分離させることなく形成することができる。Resolving power is improved by providing a 180' phase difference between adjacent apertures on the reticle. Further, a portion where adjacent openings are connected at one end can be formed without separating the patterns by changing the phase continuously or stepwise near this connecting portion.
以下、本発明の実施例を第１図により説明する。 Embodiments of the present invention will be described below with reference to FIG.
第１図は、本発明を適用したレティクル−ヒのＵ字型の
開ロバターンを示す図である。この間１１パターン１を
透過する照明光は１図示のように５ケ所の領域１−１〜
１−５において異なる位相差が与えられている。すなわ
ち、領域１−１においてはＯｏの位相差、領域１−２に
おいては４５°、領域１−３においては９０＃、領域１
−４においては１３５°、領域１−５においては１８０
°の位相差が与えられている。一つの開ロバターンにお
いて照明光の位相差を段階的に変化させる方法を以下に
示す。FIG. 1 is a diagram showing a U-shaped opening pattern of a reticle to which the present invention is applied. During this time, the illumination light that passes through the 11 patterns 1 is distributed in 5 areas 1-1 to 1 as shown in the figure.
Different phase differences are given in 1-5. That is, the phase difference is Oo in region 1-1, 45° in region 1-2, 90# in region 1-3, and
135° in -4 and 180° in region 1-5
A phase difference of ° is given. A method of changing the phase difference of illumination light in stages in one open pattern will be described below.
第７図は、第１図に示す開ロバターン１のパターンに沿
った一点鎖線部の断面を示す図である。FIG. 7 is a diagram showing a cross section taken along a dashed-dotted line along the pattern of the open lobe pattern 1 shown in FIG.
レティクル基板７上の遮光膜８が除去されている開口部
分１０−１〜１０−５は、第１図に示す５つの領域１−
１〜１−５に対応している。このうち、領域１０−５に
は、ＳｉＯ□からなる位相シフト層９がｏ、３８μｍの
厚さで設けられている。The opening portions 10-1 to 10-5 from which the light-shielding film 8 on the reticle substrate 7 has been removed are the five areas 1-1 shown in FIG.
1 to 1-5. Of these, in the region 10-5, a phase shift layer 9 made of SiO□ is provided with a thickness of 38 μm.
この厚さｄの値は、５ｉｎ２の屈折率をｎ、照明光の波
長をλとするとき、
λ
なる関係を満足しているので、領域１０−５を透過する
照明光の位相は、位相シフト層が全く設けられていない
領域１０−１を透過する照明光の位相と比べて１８０°
シフトしている。領域１〇−２，１０−３，１０−４に
設けられている位相シフト層９の厚さは領域１０−５に
設けられている位相シフト層９の厚さｄの１／４．１／
２．３／４となっている。The value of this thickness d satisfies the relationship λ, where n is the refractive index of 5in2 and λ is the wavelength of the illumination light, so the phase of the illumination light transmitted through the region 10-5 is due to the phase shift. 180° compared to the phase of the illumination light transmitted through the region 10-1 where no layer is provided
It's shifting. The thickness of the phase shift layer 9 provided in the regions 10-2, 10-3, and 10-4 is 1/4.1/of the thickness d of the phase shift layer 9 provided in the region 10-5.
It is 2.3/4.
位相シフト層９の厚さを部分的に変化させる方法を以下
に示す。まず、開口部全面に蒸着等の手段でＳｉＯ□層
を設ける。次にホトレジストを塗布し通常のりソグラフ
ィ（露光、現像）の方法で領域１０−１〜１０−４上の
ホトレジストを除去する。残ったホトレジストをマスク
として５ｉｎ２を１７４の厚さの０．０９５μｍだけエ
ツチングして除去する。再びホトレジストを塗布し、今
度は領域１０−１〜１０−３上のホトレジストを除去し
、残ったホトレジストをマスクとしてＳｉｏ２を再び０
．０９５μｍだけ除去する。Ｓｉｎ、を除去する領域を
変えることにより、最終的に第７図に示すように階段状
の位相シフト層９を形成することができる。A method for partially changing the thickness of the phase shift layer 9 will be described below. First, a SiO□ layer is provided over the entire surface of the opening by means of vapor deposition or the like. Next, a photoresist is applied, and the photoresist on the regions 10-1 to 10-4 is removed by a normal lithography (exposure, development) method. Using the remaining photoresist as a mask, the 5 in 2 film is etched and removed by a thickness of 0.095 μm, which is 174 mm. Apply photoresist again, this time remove the photoresist on areas 10-1 to 10-3, and use the remaining photoresist as a mask to apply Sio2 again to 0.
．． Only 0.095 μm is removed. By changing the region where Sin is removed, it is possible to finally form a stepped phase shift layer 9 as shown in FIG.
逆に、ＳｉＯ□の蒸着とエツチングを繰り返しながら徐
々に位相シフト層９の厚さを部分的にツクくしていく方
法も考えられる。すなわち、まず開口部全面にＳｉＯ□
を０．０９５μｍだけ蒸着し、次にホトレジスト塗布、
露光、現像、エツチングなる通常のりソグラフィの手法
を用いて第８図に示す位相シフト層９−１を形成する。Conversely, it is also possible to gradually increase the thickness of the phase shift layer 9 partially by repeating the deposition and etching of SiO□. That is, first, SiO□ is applied to the entire surface of the opening.
0.095μm, then photoresist coating,
A phase shift layer 9-1 shown in FIG. 8 is formed using a normal lithography technique of exposure, development, and etching.
再び全面にＳｉｏ、を０．０９５μｍだけ蒸着し、同様
の方法により位相シフト層９−２を形成する。以下、蒸
着、エツチングを繰り返すことにより第８図に示すＪ１
５９−３．９−４を形成する。その結果、第７図に示す
マスクと同一のマスクを形成することができる。尚、各
層９−１〜９−４は必ずしも同一の透明材料である必要
はなく、４５°の位相差が生じるように材料の屈折率と
厚さを適宜選択することができる。また、位相シフト層
９は、レジスト、例えばＰＭＭＡのような電子線描画用
のレジストそのものでもよい、この場合、ＰＭＭＡ塗布
。Sio is again deposited to a thickness of 0.095 μm over the entire surface, and a phase shift layer 9-2 is formed in the same manner. After that, by repeating the vapor deposition and etching, J1 shown in FIG.
Form 59-3.9-4. As a result, a mask identical to the mask shown in FIG. 7 can be formed. Note that the layers 9-1 to 9-4 do not necessarily need to be made of the same transparent material, and the refractive index and thickness of the materials can be appropriately selected so that a phase difference of 45° is generated. Further, the phase shift layer 9 may be a resist itself, for example, a resist for electron beam drawing such as PMMA. In this case, PMMA coating is used.
描画、現像、硬化処理の工程を繰り返せばよく、エツチ
ングの工程は不要である。ここでは、位相差４５°を１
ステツプとして各層を形成したが、各層の境界部が暗線
部として転写されることがない位相差であれば、これに
限らない。It is sufficient to repeat the steps of drawing, development, and curing treatment, and the etching step is not necessary. Here, the phase difference of 45° is 1
Although each layer is formed as a step, the present invention is not limited to this as long as the phase difference is such that the boundary between each layer is not transferred as a dark line.
マスク開口部に異なる位相差を与える手段として、第９
図に示すようにマスク基板そのものを所定の深さだけエ
ツチングしてもよい、マスク基板の屈折率をｎとすると
、λ／（２（ｎ−１））なる深さだけエツチングすれば
、照明光の位相は１８０°シフトする。エツチング深さ
を変えれば、位相差も変化する。As a means for giving different phase differences to the mask opening, the ninth
As shown in the figure, the mask substrate itself may be etched to a predetermined depth. If the refractive index of the mask substrate is n, then the illumination light can be etched to a depth of λ/(2(n-1)). The phase of is shifted by 180°. If the etching depth is changed, the phase difference will also change.
マスク開口部に異なる位相差を与える他の手段として、
マスク基板にＰｂ、Ｐ、Ｂ等のイオンを注入して局部的
に屈折率を、変化させてもよい。この場合、マスク基板
の厚さは変化しないが屈折率が変化するので、それに対
応して位相も変化する。Other means of providing different phase differences in the mask apertures include:
The refractive index may be locally changed by implanting ions such as Pb, P, and B into the mask substrate. In this case, although the thickness of the mask substrate does not change, the refractive index changes, and the phase also changes accordingly.
反射型マスクを用いる場合は、所定の反射面に凹部ある
いは凸部を設けて、反射する照明光に光路長の差を与え
ることによって１位相を変化させることができる。凹部
の深さあるいは凸部の高さを変えることによって、位相
のシフト量を制御することができる。When using a reflective mask, one phase can be changed by providing a concave or convex portion on a predetermined reflective surface and giving a difference in optical path length to the reflected illumination light. By changing the depth of the concave portion or the height of the convex portion, the amount of phase shift can be controlled.
第１０図は本発明の実施例である投影露光装置である。FIG. 10 shows a projection exposure apparatus which is an embodiment of the present invention.
マスク１３は第１図に示すパターン１を有するレティク
ルであって、照明光源１１とコンデンサレンズ１２から
成る照明光学系によって照明され、該マスク上のパター
ンは投影レンズ１５を通してウェーハ１６上に転写され
る。ウェーハ１６はｘＹステージ１７上に装着されてお
り、その位置をレーザ測長器１８で計淵しなからＸＹス
テージ１７を定寸送りしてパターン露光を繰り返す、第
１図に示すレティクルパターン１を第１０図に示す縮小
投影露光装Ｍ（波長λ＝０．３６５μｍ、開口数ＮＡ＝
０．４）を用いてウェーハ上に転写するときに得られる
光強度分布の計算値を第２図に示す、レティクルパター
ン１の最小寸法はウェーハ上の寸法に換算して０．３μ
ｍである。The mask 13 is a reticle having a pattern 1 shown in FIG. . The wafer 16 is mounted on an xY stage 17, and its position is measured with a laser length measuring device 18, and then the XY stage 17 is moved by a fixed distance to repeat pattern exposure, forming the reticle pattern 1 shown in FIG. Reduction projection exposure system M shown in FIG. 10 (wavelength λ=0.365 μm, numerical aperture NA=
Figure 2 shows the calculated value of the light intensity distribution obtained when transferring onto a wafer using 0.4).The minimum dimension of reticle pattern 1 is 0.3μ when converted to the dimension on the wafer.
It is m.
光強度分布を示す等高線２かられかるように、光強度レ
ベルに差はみられるものの、所望の形状の光強度分布が
得られている。As can be seen from the contour line 2 showing the light intensity distribution, although there are differences in the light intensity level, a desired shape of the light intensity distribution is obtained.
これに対して、第１図に示すパターン１と同一形状のパ
ターンを従来の位相差を与える手法で実現しようとする
と、例えば第３図に示すようなパターン３のようになる
。すなわち、パターン３を２つの領域３−１．３−２に
分け、それぞれの領域の照明光の位相を０°、１８０°
とする。このときのウェーハ上の光強度分布は第４図に
示す等高線４のようになる。位相差が与えられているの
で、隣接する線状パターンは分離して解像している。し
かし１両パターンが接続すべき部分も分離しているので
所望の形状の光強度分布が得られていない、また、第５
図のように、位相差を与えないで第１図と同一の形状の
開ロバターン５を用いると、ウェーハ上での光強度分布
は第６図に示す等高ｇ６のようになり、パターンが全く
解像していない。第１図に示す実施例によれば、上述の
解備不良を生じさせることなく微細パターンを転写する
ことができる。On the other hand, if an attempt is made to realize a pattern having the same shape as pattern 1 shown in FIG. 1 using the conventional method of providing a phase difference, a pattern 3 as shown in FIG. 3 will be obtained, for example. That is, the pattern 3 is divided into two regions 3-1 and 3-2, and the phase of the illumination light in each region is set to 0° and 180°.
shall be. At this time, the light intensity distribution on the wafer becomes as indicated by contour lines 4 shown in FIG. Since a phase difference is given, adjacent linear patterns are separated and resolved. However, since the parts where the first and second patterns should be connected are also separated, the desired shape of the light intensity distribution cannot be obtained.
As shown in the figure, if an open pattern 5 having the same shape as in Figure 1 is used without giving a phase difference, the light intensity distribution on the wafer will be as shown in Figure 6 at the same height g6, and the pattern will be completely Not resolved. According to the embodiment shown in FIG. 1, a fine pattern can be transferred without causing the above-mentioned defective disassembly.
第１１図は、本発明のマスクを用いて半導体素子を製作
するための配線パターンの一例である。FIG. 11 is an example of a wiring pattern for manufacturing a semiconductor element using the mask of the present invention.
このパターンは、広い開口部２１の内側に微細な寸法の
遮光パターン１９が存在するものである。In this pattern, a light-shielding pattern 19 with minute dimensions exists inside a wide opening 21.
開口領域２０は照明光の位相が１８０°シフトする領域
であり、開口領域２２は照明光の位相が９０°シフトす
る領域である。他の開口領域２１は位相のシフト量が０
の領域である。線状の遮光パターン１９は、その両側の
照明光の位相差が１８０′となるので確実に転写される
。また、開口部２０，２１．２２は互いに接する境界線
上で位相差が９０”となっており、１８０°より充分小
さいので分離することなく転写される。照明光の位相が
９０°シフトする領域２２は微細な寸法の遮光パターン
１９の先端に配置するが、その形状や大きさは特に限定
されたものではなく、関口領域２０と開口領域２１とが
接しないように配置すればよい。また、ここでは１８０
°の位相差を２段階に分けて９０°の位相差を与える領
域を設けたが、３段階以上に分けて６０’ 、１２０°
等の位相差を与える領域を設けてもよい。The aperture area 20 is an area where the phase of illumination light is shifted by 180 degrees, and the aperture area 22 is an area where the phase of illumination light is shifted by 90 degrees. In other opening areas 21, the phase shift amount is 0.
This is the area of The linear light shielding pattern 19 is reliably transferred because the phase difference between the illumination lights on both sides thereof is 180'. Further, the apertures 20, 21, and 22 have a phase difference of 90'' on the boundary line where they touch each other, which is sufficiently smaller than 180°, so that the image is transferred without separation.A region 22 where the phase of the illumination light is shifted by 90° is placed at the tip of the light-shielding pattern 19 with minute dimensions, but its shape and size are not particularly limited, and it may be placed so that the Sekiguchi area 20 and the opening area 21 do not come into contact with each other. So 180
The phase difference of 90° was divided into two stages to create a region that gave a phase difference of 90°.
It is also possible to provide a region that provides a phase difference such as .
第１２図は、広い開口部２１の内側に微小寸法の遮光パ
ターン１９が奇数本存在する例である。FIG. 12 shows an example in which an odd number of minute-sized light shielding patterns 19 are present inside a wide opening 21. In FIG.
開口部２１を透過する照明光の位相のシフト量をＯとす
る場合、開口部２０は照明光の位相が１８０＠シフトす
る領域であり、開口部２２は照明光の位相が９０°シフ
トする領域である。線状の遮光パターン１９は、その両
側を透過する照明光の位相差が１８ｏ°となるので確実
に転写される。また、開口部２０と２２とは、あるいは
開口部２１と２２とは、それらの境界線で位相差が９０
”となっており、１８０°より充分に小さな値なので互
いに分離することはない、１８０°の位相差を３段階以
上に分けて、６０” 、１２０”等の位相差を与える領
域を並べてもよい。When the amount of phase shift of the illumination light transmitted through the aperture 21 is O, the aperture 20 is a region where the phase of the illumination light shifts by 180@, and the aperture 22 is a region where the phase of the illumination light shifts by 90°. It is. The linear light-shielding pattern 19 is reliably transferred because the phase difference between the illumination light that passes through both sides thereof is 18 degrees. Furthermore, the phase difference between the openings 20 and 22 or between the openings 21 and 22 is 90 at the boundary line.
”, which is a value sufficiently smaller than 180°, so they will not be separated from each other.The 180° phase difference may be divided into three or more stages, and regions giving phase differences of 60", 120", etc. may be arranged. .
本発明によれば、ｒＡ口部を透過する照明光の位相差を
０°から１８０°近辺までの間で段階的に少しずつ変化
させているので、この間で光強度がゼロとなってパター
ンが分離することはない。このため、互いに隣接する開
ロバターンが部分的に接続しているような微細パターン
についても、本発明である照明光に位相差を与えるマス
クと投影露光装置を用いて転写することができるという
効果がある。また、上記のような微細パターンから構成
される半導体素子を製作することができるという効果が
ある。According to the present invention, the phase difference of the illumination light transmitted through the rA opening is gradually changed from 0° to around 180°, so that the light intensity becomes zero during this period and the pattern is formed. There will be no separation. Therefore, even fine patterns in which adjacent open patterns are partially connected can be transferred using the mask that provides a phase difference to the illumination light and the projection exposure apparatus of the present invention. be. Further, there is an effect that a semiconductor element composed of the above-mentioned fine pattern can be manufactured.
第１図は、レティクル上において本発明を実施した開ロ
バターンを示す図、第２図は第１図に示すパターンをウ
ェーハ上に転写した場合の光強度分布を示す図、第３図
は従来の位相差を与える手法で構成した開ロバターンを
示す図、第４図は第３図に示す開ロバターンから得られ
る光強度分布を示す図、第５図は位相差を与えない開ロ
バターンを示す図、第６図は第５図に示す間ロバターン
から得られる光強度分布を示す図、第７図、第８図、第
９図はいずれも第１図に示す開ロバターンに沿った断面
を示す図、第１０図は本発明を実施した縮小投影露光装
置を示す図、第１１図および第１２図はいずれも広い開
口部の内側に微細な遮光パターンが存在する場合の本発
明の実施例を示す図である。
符号の説明
１−１．１−２．１−３．１−４．１−５・・・それぞ
れ照明光の位相のシフト量がＯ”、４５゜９０’ 、１
３５° １８０” となるように構成した開口部、２
・・・開口部１−１〜１−５からなる開ロバターンをウ
ェーハ上に転写した際に得られる光強度分布を表す等廃
線、７・・・レティクル基板。
８・・・遮光膜、９・・・位相シフト暦、１１・・・照
明光源。
１２・・・コンデンサレンズ、１３・・・位相差を与え
るマスク、１５・・・縮小投影レンズ、１６・・・ウェ
ーハ、２０・・・照明光の位相のシフト量が１８ｏ°と
なるように構成した開口部、２１・・・照明光の位相の
シフト量がＯｏとなるように構成した開口部、２２・・
・照明光の位相のシフト量が９０°となるように構成し
た開口部。
ノー ３＝ 狂、千Ｂ」１２ρゝの開マ」Ｉア２二丈μ
分や祷布膵目
第ｇ図
第７図
７： Ｌテ４り】り泰沌愛
、１１：Ｌ叉状
’；’ ： ４＊ｎレフ）ノ唸
ター−
Ｊ ： レラヒイ７＋ｌＩづ剛ｉ−も轟ヒｊす＼″゛≠
二一ノ二ｊ＝、７”ｊ−一（ｒ七；アシｊ１０
４ト１１第タ目
＄４口
第７因
７： しＴ４ｙＪし１Ｌ２え
？：Ｌ犬項
り；イ更シック
第７０口
）２ ： ワエ一八Fig. 1 is a diagram showing an open pattern on a reticle in which the present invention is implemented, Fig. 2 is a diagram showing the light intensity distribution when the pattern shown in Fig. 1 is transferred onto a wafer, and Fig. 3 is a diagram showing the conventional pattern. FIG. 4 is a diagram showing the light intensity distribution obtained from the open rotor pattern shown in FIG. 3; FIG. 5 is a diagram showing an open rotor pattern that does not provide a phase difference. FIG. 6 is a diagram showing the light intensity distribution obtained from the open lobe pattern shown in FIG. 5; FIGS. 7, 8, and 9 are all diagrams showing cross sections along the open lobe pattern shown in FIG. 1; FIG. 10 is a diagram showing a reduction projection exposure apparatus embodying the present invention, and FIGS. 11 and 12 are diagrams each showing an embodiment of the present invention in which a fine light-shielding pattern exists inside a wide opening. It is. Explanation of symbols 1-1.1-2.1-3.1-4.1-5...The phase shift amount of the illumination light is O", 45°90', 1, respectively.
35° 180" opening, 2
. . . Isolated lines representing the light intensity distribution obtained when an open pattern consisting of openings 1-1 to 1-5 is transferred onto a wafer, 7 . . . Reticle substrate. 8... Light shielding film, 9... Phase shift calendar, 11... Illumination light source. 12... Condenser lens, 13... Mask providing phase difference, 15... Reduction projection lens, 16... Wafer, 20... Constructed so that the amount of phase shift of illumination light is 18°. an aperture, 21... an aperture configured such that the phase shift amount of the illumination light is Oo, 22...
- An opening configured so that the amount of phase shift of illumination light is 90°. No 3 = madness, thousand B" 12ρゝ open ma" Ia 22jo μ
Minya prayer cloth pancreatic eye g figure 7 figure 7: Lte4ri]richaosai, 11: L prong ';': 4 * n ref) no groan ter- J: Rerahii7+lIzugoi- Todorokisu＼″゛≠
21 no 2 j=, 7”j-1 (r7; reed j10
4th, 11th, $4, 7th reason, 7: ShiT4yJ, 1L2 Huh? : L dog party; Isara chic 70th mouth) 2 : Wae Kazuhachi
Claims (1)
遮光部で部分的に分割されているようなパターンを有し
、上記開口部分を透過する照明光に位相差を与えるマス
クにおいて、上記遮光部を挾んで相対する２つの上記開
口部分の上記遮光部近傍の領域を透過する照明光に１８
０°に近いθなる位相差を与え、かつ上記連続している
開口部分を透過する照明光に与える位相差を０°からθ
まで連続的あるいは段階的に変化させる手段を有するこ
とを特徴とするマスク。 ２、微細線状の遮光部を隔てた開口部分が少なくても一
部において接続しているような微細パターンを有し、上
記関口部分を透過する照明光に開口部分の領域によって
異なる位相差を与えるマスクにおいて、上記遮光部を挾
んで相対する２つの上記開口部分の上記遮光部近傍の領
域を透過する照明光に１８０°に近いθなる位相差を与
え、かつ上記２つの領域は、その領域とφ（０°＜φ＜
１８０°）なる位相差を与える領域と接していることを
特徴とするマスク。 ３、請求項１あるいは請求項２に記載の、マスクに与え
る位相差θの値が９０°＜θ＜２７０°であることを特
徴とするマスク。 ４、請求項１に記載のマスクの位相差を連続的あるいは
段階的に変化させる手段として、開口部分に厚さが連続
的あるいは段階的に変化する透明な薄膜を設けたことを
特徴とするマスク。 ５、請求項１に記載のマスクの位相差を連続的あるいは
段階的に変化させる手段として、マスクの開口部の所定
の領域において、マスク基板を連続的あるいは段階的に
変化した所定の深さだけエッチングしたことを特徴とす
るマスク。 ６、請求項１に記載のマスクの位相差を連続的あるいは
段階的に変化させる手段として、マスクの開口部の所定
の領域において、マスク基板に不純物を注入して局所的
に屈折率を変化させ、かつ、所望の位相差に応じて不純
物の注入量を制御することにより屈折率を連続的あるい
は段階的に変化させることを特徴とするマスク。 ７、請求項２に記載のマスクにおいて、互いに接する透
過領域の照明光の位相差φが９０°以下であることを特
徴とするマスク。 ８、請求項２に記載のマスクにおいて、互いに接する透
過領域の照明光の位相差φが６０°以下であることを特
徴とするマスク。 ９、一つの連続している反射部分の一部が、微細線状の
遮光部で部分的に分割されているようなパターンを有し
、上記反射部分を反射する照明光に位相差を与える反射
型マスクにおいて、上記遮光部を挾んで相対する２つの
上記反射部分の上記遮光部近傍の領域を反射する照明光
に１８０°近辺の位相差θを与え、かつ上記連続してい
る反射部分を反射する照明光に与える位相差を０°から
θまで連続的あるいは段階的に変化させるための凹凸面
を設けることを特徴とする反射型マスク。 １０、マスクと該マスクを照明する光源と基板と該マス
ク上のパターンを該基板上に転写する投影レンズとから
成る投影露光装置において、該マスクがマスク透過光の
位相差を０°から１８０°近辺まで連続的または段階的
に変化させるホトマスクであることを特徴とする投影露
光装置。 １１、マスク透過光の位相差を０°から１８０°近辺の
値まで連続的または段階的に変化させる上記マスクと、
該マスク上のパターンを該基板上に転写する上記投影露
光装置とから得られるパターンから構成されることを特
徴とする半導体素子。[Claims] 1. Illumination light having a pattern in which a part of one continuous opening is partially divided by fine linear light shielding parts, and transmitting the illumination light through the opening. In the mask which provides a phase difference to the illumination light passing through the area near the light shielding part of the two opening parts facing each other with the light shielding part in between, the illumination light has a phase difference of 18
Give a phase difference of θ close to 0°, and change the phase difference given to the illumination light transmitted through the continuous aperture from 0° to θ.
1. A mask characterized by having means for changing continuously or stepwise. 2. It has a fine pattern in which the openings separated by the fine line-shaped light shielding part are connected at least in some parts, and the illumination light passing through the Sekiguchi part has a different phase difference depending on the area of the opening. In the mask provided, a phase difference of θ close to 180° is given to the illumination light that passes through the area near the light shielding part of the two opening parts facing each other with the light shielding part in between, and the two regions are and φ(0°<φ<
A mask characterized by being in contact with a region that provides a phase difference of 180°. 3. The mask according to claim 1 or 2, wherein the value of the phase difference θ given to the mask is 90°<θ<270°. 4. A mask characterized in that a transparent thin film whose thickness changes continuously or stepwise is provided in the opening portion as means for changing the phase difference of the mask according to claim 1 continuously or stepwise. . 5. As a means for continuously or stepwise changing the phase difference of the mask according to claim 1, in a predetermined region of the opening of the mask, the mask substrate is changed continuously or stepwise to a predetermined depth. A mask characterized by etching. 6. As a means for continuously or stepwise changing the phase difference of the mask according to claim 1, impurities are implanted into the mask substrate in a predetermined region of the opening of the mask to locally change the refractive index. and a mask characterized in that the refractive index is changed continuously or stepwise by controlling the amount of impurity implanted according to a desired phase difference. 7. The mask according to claim 2, wherein the phase difference φ of the illumination light of the mutually contacting transmission regions is 90° or less. 8. The mask according to claim 2, wherein the phase difference φ of the illumination light of the mutually contacting transmission regions is 60° or less. 9. Reflection that has a pattern in which a part of one continuous reflective part is partially divided by fine linear light-shielding parts, and gives a phase difference to the illumination light that reflects the reflective part. In the mold mask, a phase difference θ of about 180° is given to the illumination light that reflects the area near the light shielding part of the two reflective parts facing each other with the light shielding part in between, and the continuous reflective part is reflected. A reflective mask characterized by being provided with an uneven surface for changing the phase difference given to illumination light continuously or stepwise from 0° to θ. 10. In a projection exposure apparatus consisting of a mask, a light source that illuminates the mask, a substrate, and a projection lens that transfers a pattern on the mask onto the substrate, the mask changes the phase difference of light transmitted through the mask from 0° to 180°. A projection exposure apparatus characterized by being a photomask that changes the distance continuously or stepwise. 11. The above mask that changes the phase difference of the mask transmitted light continuously or stepwise from 0° to a value around 180°;
A semiconductor device comprising a pattern obtained from the projection exposure apparatus described above, which transfers the pattern on the mask onto the substrate.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63-60373 | 1988-03-16 | ||
| JP6037388 | 1988-03-16 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0234854A true JPH0234854A (en) | 1990-02-05 |
| JP2865685B2 JP2865685B2 (en) | 1999-03-08 |
Family
ID=13140266
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1390589A Expired - Fee Related JP2865685B2 (en) | 1988-03-16 | 1989-01-25 | Method for manufacturing semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2865685B2 (en) |
Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0278216A (en) * | 1988-09-14 | 1990-03-19 | Hitachi Ltd | Manufacture of photomask |
| JPH03144645A (en) * | 1989-10-31 | 1991-06-20 | Sony Corp | Exposure mask |
| WO1991020018A1 (en) * | 1990-06-21 | 1991-12-26 | Oki Electric Industry Co., Ltd. | Mask for shifting phase |
| JPH04194939A (en) * | 1990-11-27 | 1992-07-14 | Matsushita Electric Ind Co Ltd | Formation of mask and pattern |
| JPH04338753A (en) * | 1991-05-16 | 1992-11-26 | Nec Corp | Mask for optical exposing and production thereof |
| JPH0611825A (en) * | 1992-04-27 | 1994-01-21 | Mitsubishi Electric Corp | Production of photomask |
| JPH0611826A (en) * | 1992-04-28 | 1994-01-21 | Mitsubishi Electric Corp | Photomask and its production |
| JPH0651491A (en) * | 1992-07-30 | 1994-02-25 | Nec Corp | Production of multistage phase shift reticule |
| US5298365A (en) * | 1990-03-20 | 1994-03-29 | Hitachi, Ltd. | Process for fabricating semiconductor integrated circuit device, and exposing system and mask inspecting method to be used in the process |
| US5391441A (en) * | 1992-02-21 | 1995-02-21 | Hitachi, Ltd. | Exposure mask and method of manufacture thereof |
| US5424153A (en) * | 1990-09-10 | 1995-06-13 | Fujitsu Limited | Optical mask using phase shift and method of producing the same |
| EP0698916A3 (en) * | 1994-07-18 | 1997-07-30 | Advanced Micro Devices Inc | Method of optical lithography using phase shift masking |
| US6090633A (en) * | 1999-09-22 | 2000-07-18 | International Business Machines Corporation | Multiple-plane pair thin-film structure and process of manufacture |
| JP2005345920A (en) * | 2004-06-04 | 2005-12-15 | Semiconductor Leading Edge Technologies Inc | Phase shift mask and its manufacturing method |
| JP2011253933A (en) * | 2010-06-02 | 2011-12-15 | Toshiba Corp | Mask for inspection of exposure device and inspection method of exposure device |
| WO2014171512A1 (en) * | 2013-04-17 | 2014-10-23 | アルバック成膜株式会社 | Phase shift mask production method and phase shift mask |
| WO2014171510A1 (en) * | 2013-04-17 | 2014-10-23 | アルバック成膜株式会社 | Phase shift mask production method, phase shift mask and phase shift mask production device |
-
1989
- 1989-01-25 JP JP1390589A patent/JP2865685B2/en not_active Expired - Fee Related
Cited By (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0278216A (en) * | 1988-09-14 | 1990-03-19 | Hitachi Ltd | Manufacture of photomask |
| JPH03144645A (en) * | 1989-10-31 | 1991-06-20 | Sony Corp | Exposure mask |
| US5667941A (en) * | 1990-03-20 | 1997-09-16 | Hitachi, Ltd. | Process for fabricating semiconductor integrated circuit device, and exposing system and mask inspecting method to be used in the process |
| US5753416A (en) * | 1990-03-20 | 1998-05-19 | Hitachi, Ltd. | Process for fabricating semiconductor integrated circuit device, and exposing system and mask inspecting method to be used in the process |
| US5455144A (en) * | 1990-03-20 | 1995-10-03 | Hitachi, Ltd. | Process for fabricating semiconductor integrated circuit device, and exposing system and mask inspecting method to be used in the process |
| US6794118B2 (en) | 1990-03-20 | 2004-09-21 | Renesas Technology Corp. | Process for fabricating semiconductor integrated circuit device, and exposing system and mask inspecting method to be used in the process |
| US6309800B1 (en) | 1990-03-20 | 2001-10-30 | Hitachi, Ltd. | Process for fabricating semiconductor integrated circuit device, and exposing system and mask inspecting method to be used in the process |
| US6153357A (en) * | 1990-03-20 | 2000-11-28 | Hitachi, Ltd. | Process for fabricating semiconductor integrated circuit device, and exposing system and mask inspecting method to be used in the process |
| US5298365A (en) * | 1990-03-20 | 1994-03-29 | Hitachi, Ltd. | Process for fabricating semiconductor integrated circuit device, and exposing system and mask inspecting method to be used in the process |
| US5342713A (en) * | 1990-06-21 | 1994-08-30 | Oki Electric Industry Co., Ltd. | Phase shifting mask |
| WO1991020018A1 (en) * | 1990-06-21 | 1991-12-26 | Oki Electric Industry Co., Ltd. | Mask for shifting phase |
| US5424153A (en) * | 1990-09-10 | 1995-06-13 | Fujitsu Limited | Optical mask using phase shift and method of producing the same |
| JPH04194939A (en) * | 1990-11-27 | 1992-07-14 | Matsushita Electric Ind Co Ltd | Formation of mask and pattern |
| JPH04338753A (en) * | 1991-05-16 | 1992-11-26 | Nec Corp | Mask for optical exposing and production thereof |
| US5391441A (en) * | 1992-02-21 | 1995-02-21 | Hitachi, Ltd. | Exposure mask and method of manufacture thereof |
| JPH0611825A (en) * | 1992-04-27 | 1994-01-21 | Mitsubishi Electric Corp | Production of photomask |
| JPH0611826A (en) * | 1992-04-28 | 1994-01-21 | Mitsubishi Electric Corp | Photomask and its production |
| JPH0651491A (en) * | 1992-07-30 | 1994-02-25 | Nec Corp | Production of multistage phase shift reticule |
| EP0698916A3 (en) * | 1994-07-18 | 1997-07-30 | Advanced Micro Devices Inc | Method of optical lithography using phase shift masking |
| EP1786024A1 (en) * | 1994-07-18 | 2007-05-16 | Advanced Micro Devices, Inc. | Method of optical lithography using phase shift masking |
| KR100382043B1 (en) * | 1994-07-18 | 2003-07-04 | 아드밴스트 마이크로 디이바이시스 인코포레이티드 | Method of opticlal lithography using phase shift masking |
| US6090633A (en) * | 1999-09-22 | 2000-07-18 | International Business Machines Corporation | Multiple-plane pair thin-film structure and process of manufacture |
| JP2005345920A (en) * | 2004-06-04 | 2005-12-15 | Semiconductor Leading Edge Technologies Inc | Phase shift mask and its manufacturing method |
| JP4582574B2 (en) * | 2004-06-04 | 2010-11-17 | シャープ株式会社 | Phase shift mask and manufacturing method thereof |
| JP2011253933A (en) * | 2010-06-02 | 2011-12-15 | Toshiba Corp | Mask for inspection of exposure device and inspection method of exposure device |
| WO2014171512A1 (en) * | 2013-04-17 | 2014-10-23 | アルバック成膜株式会社 | Phase shift mask production method and phase shift mask |
| WO2014171510A1 (en) * | 2013-04-17 | 2014-10-23 | アルバック成膜株式会社 | Phase shift mask production method, phase shift mask and phase shift mask production device |
| CN104937490A (en) * | 2013-04-17 | 2015-09-23 | 爱发科成膜株式会社 | Phase shift mask production method and phase shift mask |
| JP5934434B2 (en) * | 2013-04-17 | 2016-06-15 | アルバック成膜株式会社 | Phase shift mask manufacturing method, phase shift mask, and phase shift mask manufacturing apparatus |
| JP5948495B2 (en) * | 2013-04-17 | 2016-07-06 | アルバック成膜株式会社 | Phase shift mask manufacturing method and phase shift mask |
| TWI609233B (en) * | 2013-04-17 | 2017-12-21 | 阿爾貝克成膜股份有限公司 | Manufacturing method of phase shift mask and phase shift mask |
| TWI613509B (en) * | 2013-04-17 | 2018-02-01 | 阿爾貝克成膜股份有限公司 | Manufacturing method of phase shift mask, phase shift mask, and manufacturing device of phase shift mask |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2865685B2 (en) | 1999-03-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH0234854A (en) | Mask, exposing device, and semiconductor element | |
| JPH08222513A (en) | Pattern formation method | |
| KR950014324B1 (en) | Optical mask using phase shift and method of producing the same | |
| Okamoto et al. | New phase-shifting mask technology for quarter-micron photolithography | |
| KR100490913B1 (en) | Alternating phase mask | |
| JPH075675A (en) | Mask and preparation thereof | |
| KR100297081B1 (en) | Multi-phase photo mask using sub-wavelength structures | |
| JP4613364B2 (en) | Resist pattern formation method | |
| JPS62189468A (en) | Photomask | |
| US5533634A (en) | Quantum chromeless lithography | |
| JP2000019713A (en) | Mask and exposure method using it | |
| KR100244285B1 (en) | Phase shifting mask and method for fabrication | |
| JPH04254855A (en) | Photomask and its manufacture | |
| JPH1115128A (en) | Photomask and pattern formation using the same | |
| JP2980479B2 (en) | Photomask and exposure method | |
| JP3110801B2 (en) | Photomask manufacturing method and photomask | |
| KR100455384B1 (en) | Wave guided alternating phase shift mask and fabrication method thereof | |
| JPH03242648A (en) | Photomask | |
| JPH04269749A (en) | Photomask and its manufacture | |
| KR0183706B1 (en) | Projection exposure method, the mask thereof | |
| KR100393202B1 (en) | Mask used for forming pattern and manufacturing method thereof | |
| JP2593234B2 (en) | Photomask manufacturing method | |
| KR940011095B1 (en) | Phase shift mask, pattern building method using the same | |
| KR100190115B1 (en) | Phase shift mask ans fabrication method therefor | |
| JPH04175746A (en) | Mask, manufacture thereof and image forming method using it |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |