JPH02271656A - Multilayered microwave integrated circuit - Google Patents

Abstract

PURPOSE:To prevent unnecessary electrical interference from being produced between an upper layer circuit and a lower layer circuit by shielding an electromagnetic field with a conductor layer by laminating said circuits with said conductor layer held between those circuits, said conductor layer being earthed keeping its state where it is insulated from parts of said circuits other than at least earthed portion of the same. CONSTITUTION:Circuits 2a, 2b of semiconductor substrates 1a, 1b are laminated with a conductor layer 7 held therebetween, the conductor layer 7 being earthed in its state where it is isolated from portions of said circuits other than at least earthed portions of the same. Accordingly, also when the circuit is operated in a microwave range, there are provided between the respective circuits and the earthed conductor layer 7 an electromagnetic field due to a current flowing through the upper layer circuit 2a and an electromagnetic field due to a current flowing through the lower layer circuit 2b. Hereby, there is eliminated electrical interference between the upper layer circuit 2a and the lower layer circuit 2b, and the upper and lower layer circuits 2a and 2b are connected at a connection line 4 so that desired operation is achieved as a whole. Hereby, there can be eliminated unnecessary electrical interference between the upper and lower layer circuits upon use in a microwave range.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] This invention relates to a multilayer microwave integrated circuit.

[Conventional technology]

Figure 1) is a cross-sectional view of an example of a multilayer integrated circuit for low frequencies, as shown in, for example, "SO Groove Structure Formation Technology, Sangyo Tosho IP, 193-P, 196, edited by Seibu Furuyo, (I
a) is a lower layer semiconductor substrate made of silicon;

(1b) is a lower layer semiconductor substrate made of silicon, (2a
) is an upper layer circuit formed on a lower layer semiconductor substrate (1a), and (2b) is a lower layer circuit formed on a lower layer semiconductor substrate (1b). The upper layer circuit (2a) and the lower layer circuit (2b) are each a field effect transistor (pET).
It consists of active equivalent elements such as (referred to as ), passive circuit elements such as resistors and capacitors, and lines. In addition, (3) is a stacked lower layer circuit (2a) and lower layer circuit (2b).
The next insulating layer (4) using polyimide for T-insulation is provided to electrically connect predetermined points of the lower layer circuit (2a) and the lower layer circuit (2b) so that they function in a laminated state. This is the connecting line.

As mentioned above, conventional multilayer integrated circuits have lower layer circuits (2a
) and the lower layer circuit (2b) are stacked so as to face each other, and the two circuits are electrically separated only by the insulator NIt31. In addition, when operating in a low frequency band with a sufficiently low frequency, unnecessary electrical connections between the lower layer circuit (2a) and the lower layer circuit (2b) are caused because the circuit components are small and the coupling is small relative to the wavelength. There is no interference as the 9 circuits are connected by the connecting wire (4).

Perform the desired operation as a whole.

[Problem to be solved by the invention]

Conventional multilayer integrated circuits are configured as described above, so when used in high frequency bands such as microwave bands, the amount of coupling increases due to the short wavelength and electrical interference between lower layer circuits and lower layer circuits occurs. There was a problem that occurred.

This invention has been made to solve these problems, and is to obtain a multilayer microwave integrated circuit that is free from unnecessary electrical interference between lower layer circuits and lower layer circuits when used in micro-transfers. With the goal.

[Means to solve the problem]

The multilayer microwave integrated circuit according to the present invention includes a plurality of semiconductor substrates each having a circuit formed on one surface, and a conductor layer that is grounded and insulated from at least a portion other than the ground portion of the circuit of the semiconductor substrate. It is made by sandwiching and stacking.

[Effect]

The multilayer microwave integrated circuit in this invention is.

Since the grounded conductor layer avoids electromagnetic fields, there is no electrical interference between the lower layer circuits and the lower layer circuits.

[Embodiments of the invention]

Embodiments of the present invention will be described below with reference to the drawings.

FIG. 1 is a cross-sectional view showing a multilayer microwave integrated circuit according to the present invention, in which semiconductor substrates are stacked with the circuit-formed surfaces facing outward. (1a
) is the lower layer semiconductor substrate, (lb) is the lower layer semiconductor substrate, (2a) is the lower layer circuit formed on the lower layer semiconductor substrate (1a), (2b) is the lower layer semiconductor substrate (1b)
The lower layer circuit (4) formed on the lower layer circuit (2a
) and a predetermined part of the lower layer circuit (2b), (5a) (5b) are circuit elements, (6a) (6b)
(7) is a line composed of a conductor, and (7) is a lower layer semiconductor substrate (1a
) and the lower layer semiconductor substrate (1b), and is a grounded conductor layer. Note that the connecting wires (4) are insulated from the conductor layer (7) except for those connecting the ground portion of the circuit.

In such a multilayer microwave integrated circuit with an M floor, even when operated in the microwave band, the upper layer IgJ path (2a
) and the electromagnetic field due to the current flowing through the lower layer circuit (2b) are generated between each circuit and the grounded conductor layer (7). ・The lower layer circuit (2a)
There is no electrical interference between the lower layer circuit (2b) and the lower layer circuit (2b), and the lower layer circuit (2a) and the lower layer circuit (2b) are coupled at predetermined points by the connecting wire (4), so the desired overall result is achieved. perform the following actions.・The above connection line (4) is connected to the lower layer circuit (
2a) and the lower layer circuit (2b) where electrical interference is unlikely to occur, or! Since it is installed in a location that is less affected by atmospheric interference, there is no problem with its operation. Furthermore, in the multilayer microwave integrated circuit of the present invention, a microstrip line is constituted by the respective lines of the lower layer circuit (2a) and the lower layer circuit (2b) and the conductor layer (7). The wave collecting circuit design method can be applied as is.

FIG. 2 is a sectional view showing another embodiment of the present invention, in which the lower layer circuit (2a) or the lower layer circuit (2b) includes a high output active circuit element such as a high output amplifier. Second
In the figure, (6b1) is a narrow path that becomes the ground in the lower layer circuit (2b), (8) is a high output active circuit element, (9
) is a conductor layer with low thermal resistance that connects the conductor layer (7) and the ground line (6b, ).

The rest is the same as the embodiment shown in FIG.

Further, FIG. 3 is a cross-sectional view showing the mounting state of the multilayer microwave integrated circuit shown in FIG. 2, and the bag αO is a base συ which becomes a ground made of a conductor.

A side plate 0→ made of ceramic is provided with a conductor portion α3 connected to the input/output terminal α2 provided on the base aυ.

It consists of a lid α9, and a multilayer microwave integrated circuit αe, the input and output terminals of which are connected to the conductor part a3, respectively, and a line (2b) serving as a ground in the lower layer circuit (2b).
6b) and (6b2) are mounted so that they are in contact with the base iI]). Since the multilayer microwave integrated circuit is mounted as described above, the conductor layer (9) grounds the conductor layer (7). In addition, by providing the conductor layer +91), the heat generated by high-output active circuit elements when the circuit is operated is absorbed by the conductor/1m (71 → conductor block (9) → line (sb, )
→ Heat can be efficiently radiated to the base aυ, which serves as a heat sink, through a path with low thermal resistance of the base aυ, and a multilayer microwave integrated circuit including high-output active circuit elements can be stably operated. Note that the conductor layer (9) is the conductor layer (7).
Since it is similarly grounded, there is no effect on electrical interference. Furthermore, FIG. 4 is a sectional view showing an embodiment in which the heat dissipation effect in the embodiment shown in FIG. 2 is further enhanced.
1a), which extends into the vicinity of the high-power active circuit element (8). In addition, when the high output active circuit element (8) is an FET, the source terminal of the IT and the conductor layer (
It is also possible to improve heat dissipation by bringing them into direct contact with 9). In addition, in the above embodiment, the conductor layer (9) and the conductor layer (7)
The case where the conductor layer (9) also plays the role of grounding the conductor layer (7) is shown, but the conductor layer (7)
) is not separately grounded, and the same effect can be obtained even if the conductor layer is not connected to the conductor layer (7).

Further, FIG. 5 is a sectional view showing another embodiment of the present invention, in which the lower layer circuit (2b) is
) is placed on the conductor layer (7) side, and an insulator layer is laminated between the lower layer (b) and the conductor layer (7). In the figure, (I8 is the lower layer semiconductor substrate (1
A conductive pattern for grounding is provided on the surface on which no circuit is formed, and is connected to the conductive layer (7) when a multilayer microwave integrated circuit is mounted, as shown in Fig. 3 above. Leading wire α! The conductor layer (7) through J serves to easily ground the entire conductor layer (7). The other parts are the same as in FIG. 1. In the above embodiment as well, the grounded conductor layer (7) prevents electrical interference between the upper layer circuit (2a) and the lower layer circuit (2b), and the connecting wire (4) Since they are combined, they perform the desired operation as a whole. In the above embodiment, both the upper layer circuit (2a) and the lower layer circuit (2b) constitute a microstrip line with the conductor layer (7), which is different from the conventional monolithic microwave integrated circuit design. The law can be applied as is.

Further, in the above embodiment, the case where the insulating layer r1η was provided between the circuit on the lower layer semiconductor substrate (1b) side and the conductor layer (7) was explained, but the present invention is not limited to this.
A similar configuration can be applied to the 1a) side, and similar effects can be obtained.

Further, FIGS. 6 and 7 show still another embodiment of the present invention, and FIG. 6 is an exploded perspective view thereof.

FIG. 7 is a sectional view thereof. This embodiment shows a case in which a lower layer circuit (2b) is formed and laminated in a recess (2) according to the present invention on a lower layer semiconductor substrate (1b).

The other parts are the same as those shown in FIG. 5. Figure 8 is an enlarged cross-sectional view of the dug-out part of Figure 6 or Figure 7, showing how the reed, line (6b) and conductor layer (7) become a strip conductor and a ground conductor, respectively, forming a microstrip line. Please show me.

The arrows in the figure represent the electric field as a model. In the above embodiment, the case where the recess (1) is provided on the lower layer semiconductor substrate (1b) side is shown, but the present invention is not limited to this, and a similar structure can be applied to the lower layer semiconductor substrate (1a) side.

In either case, the same effects as described above can be obtained. In addition, in the case of the structure in which the recess (1) is provided in the semiconductor substrate as described above, various line formations such as rectangular coaxial line and coplanar line can be realized in addition to the microstrip line, increasing the degree of freedom in circuit design. It has an increasing effect.

Next, explanation will be given using 2 to 30 examples.

FIGS. 9 and 10 are enlarged sectional views of the dug-out part of FIGS. 6 and 7, FIG. 9 shows an example in which a rectangular coaxial line is formed, and FIG. An example is shown below. In FIGS. 9 and 10, Qυ is a strip conductor, (to) is a ground conductor connected to the conductor layer (7) provided in the recess ω, and c! :l includes digging (
92 The arrows in the figure represent the electric field as a model. Note that multiple types of dielectric materials (c) may be used.

Also, it may be omitted.

As shown in the above embodiments, by using a line in which the IJ tube conductor is surrounded by a ground conductor, electrical interference between adjacent lines formed on the same semiconductor substrate can be sufficiently prevented. Because it can be done.

This has the effect of increasing the degree of freedom in circuit wiring and further facilitating circuit design.

Although heat radiation is not mentioned in one or more of the embodiments shown in FIG. 5 and FIG. 6 or FIG. 7, the explanation is given by showing the embodiments in FIGS. It is obvious that the same means as above can be applied and a heat dissipation effect can be obtained. Further, the materials of the upper I-semiconductor substrate (1a) and the lower layer semiconductor substrate (1b) described above may be the same or different. Furthermore, in two or more embodiments, a plate-shaped conductor was used as the conductor layer.

The conductor is not limited to this, but a conductor formed in a mesh shape or the like may also be used.

〔Effect of the invention〕

As described above, according to the present invention, a lower layer semiconductor substrate on which a circuit is formed and a lower layer semiconductor substrate are connected to a grounded conductor layer insulated from at least a portion other than the ground portion of the circuit of the semiconductor substrate. Since the multi-layer microwave integrated circuit f: is constructed by stacking the two layers in between, the conductor layer shields the electromagnetic field and prevents unnecessary electrical interference between the lower layer circuit and the lower layer circuit.

[Brief explanation of drawings]

FIG. 1 is a sectional view showing one embodiment of the invention, FIG. 2 is a sectional view showing another embodiment of the invention, and FIG. 3 is the multilayer microwave integrated circuit of the invention shown in FIG. FIG. 4 is a sectional view showing still another embodiment of the invention, FIG. 5 is a sectional view showing still another embodiment of the invention, and FIG. 6 is a sectional view showing still another embodiment of the invention. Further, an exploded perspective view showing another embodiment, FIG. 7 is a sectional view of the embodiment shown in the melodic diagram, and FIG. 8 is an enlarged view of the dug portion of the embodiment shown in FIG. 7. 9 and 10 are enlarged sectional views of the dug portion of the embodiment shown in FIG. 6 or 7, and FIG. 9 is an enlarged view of the embodiment in which a rectangular coaxial line is formed. 10 is an enlarged sectional view showing an embodiment in which a coplanar line is formed, and FIG. 1) is a sectional view showing a conventional multilayer integrated circuit. In the figure, (la) h lower layer semiconductor substrate. (1b) is a lower layer semiconductor substrate, (2a) is a lower layer circuit. (2b) is a lower layer circuit, (3) is an insulator layer using polyimide, (4) is a connection line, and (5a) and (5b) are circuit elements. (6a) (6b) is the line, (6b1) is the line that becomes Guerande, (7) is the conductor layer, (8) is the socket output active circuit element, (9) is the conductor layer, α1 is the package, αυ is the pace,
The wholesaler is the input/output terminal, α1 is the conductor part, α4 is the side plate, α is the lid, αQ is the multilayer microwave integrated circuit, a7) is the insulator J
θ and α are the conductor patterns, +1'l is the tatami edge, (a) is the digging, Qυ is the strip conductor, vessel is the ground conductor, and @ is the dielectric. Note that the same symbols in the valley diagram indicate the same or corresponding parts.

Claims (4)

[Claims] (1) A plurality of semiconductor substrates having a circuit formed on at least one surface are stacked by electrically coupling predetermined parts of the circuit on each semiconductor substrate, and the semiconductor substrate is placed between each of the semiconductor substrates. 1. A multilayer microwave integrated circuit characterized in that a conductor layer is provided which is grounded and insulated from at least a portion other than the ground portion of the circuit. (2) The multilayer microwave integrated circuit according to claim 1, wherein semiconductor substrates each having a circuit formed on at least one surface are stacked with the surface on which the circuit is formed facing outward. (3) A claim in which at least one semiconductor substrate with a circuit formed on at least one surface is stacked with the surface on which the circuit is formed facing inside, with an insulating layer interposed between the circuit and the conductor layer. 1. The multilayer microwave laminated circuit according to 1. (4) At least one of the stacked semiconductor substrates,
2. The multilayer microwave laminated circuit according to claim 1, wherein the circuit is formed in a recessed portion provided at a predetermined position on the surface of the semiconductor substrate in contact with the conductor layer.