JPH0158181B2 - - Google Patents
Info
- Publication number
- JPH0158181B2 JPH0158181B2 JP8811181A JP8811181A JPH0158181B2 JP H0158181 B2 JPH0158181 B2 JP H0158181B2 JP 8811181 A JP8811181 A JP 8811181A JP 8811181 A JP8811181 A JP 8811181A JP H0158181 B2 JPH0158181 B2 JP H0158181B2
- Authority
- JP
- Japan
- Prior art keywords
- photoreceptor
- formula
- trisazo compound
- present
- charge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 150000001875 compounds Chemical class 0.000 claims description 23
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 150000003839 salts Chemical class 0.000 claims description 6
- 238000006243 chemical reaction Methods 0.000 claims description 5
- YPOXSLZIYJHIQI-UHFFFAOYSA-N 2-hydroxy-n-phenyl-11h-benzo[a]carbazole-3-carboxamide Chemical compound OC1=CC2=C3NC4=CC=CC=C4C3=CC=C2C=C1C(=O)NC1=CC=CC=C1 YPOXSLZIYJHIQI-UHFFFAOYSA-N 0.000 claims description 4
- SNLFYGIUTYKKOE-UHFFFAOYSA-N 4-n,4-n-bis(4-aminophenyl)benzene-1,4-diamine Chemical compound C1=CC(N)=CC=C1N(C=1C=CC(N)=CC=1)C1=CC=C(N)C=C1 SNLFYGIUTYKKOE-UHFFFAOYSA-N 0.000 claims description 3
- 125000000129 anionic group Chemical group 0.000 claims description 2
- 125000000524 functional group Chemical group 0.000 claims description 2
- 108091008695 photoreceptors Proteins 0.000 description 36
- 239000000049 pigment Substances 0.000 description 14
- 239000000243 solution Substances 0.000 description 11
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 10
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 9
- 239000013078 crystal Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 6
- 230000035945 sensitivity Effects 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 239000007864 aqueous solution Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 125000000664 diazo group Chemical group [N-]=[N+]=[*] 0.000 description 4
- LPXPTNMVRIOKMN-UHFFFAOYSA-M sodium nitrite Chemical compound [Na+].[O-]N=O LPXPTNMVRIOKMN-UHFFFAOYSA-M 0.000 description 4
- 238000003756 stirring Methods 0.000 description 4
- 238000000862 absorption spectrum Methods 0.000 description 3
- 239000002800 charge carrier Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000011669 selenium Substances 0.000 description 3
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 2
- 239000004419 Panlite Substances 0.000 description 2
- VMHLLURERBWHNL-UHFFFAOYSA-M Sodium acetate Chemical compound [Na+].CC([O-])=O VMHLLURERBWHNL-UHFFFAOYSA-M 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000006193 diazotization reaction Methods 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 239000004431 polycarbonate resin Substances 0.000 description 2
- 229920005668 polycarbonate resin Polymers 0.000 description 2
- 229920000728 polyester Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000001632 sodium acetate Substances 0.000 description 2
- 235000017281 sodium acetate Nutrition 0.000 description 2
- 235000010288 sodium nitrite Nutrition 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000002076 thermal analysis method Methods 0.000 description 2
- ODHXBMXNKOYIBV-UHFFFAOYSA-N triphenylamine Chemical compound C1=CC=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 ODHXBMXNKOYIBV-UHFFFAOYSA-N 0.000 description 2
- JDUKORYFKBOOBJ-UHFFFAOYSA-N 4-[2-[3-[4-(diethylamino)phenyl]-1,3-dihydropyrazol-2-yl]ethenyl]-n,n-diethylaniline Chemical compound C1=CC(N(CC)CC)=CC=C1C=CN1C(C=2C=CC(=CC=2)N(CC)CC)C=CN1 JDUKORYFKBOOBJ-UHFFFAOYSA-N 0.000 description 1
- AGEQBLXZMIPKBM-UHFFFAOYSA-N 4-n,4-n-diphenylbenzene-1,2,3,4-tetramine Chemical compound NC1=C(N)C(N)=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 AGEQBLXZMIPKBM-UHFFFAOYSA-N 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- QLNFINLXAKOTJB-UHFFFAOYSA-N [As].[Se] Chemical compound [As].[Se] QLNFINLXAKOTJB-UHFFFAOYSA-N 0.000 description 1
- HFACYLZERDEVSX-UHFFFAOYSA-N benzidine Chemical compound C1=CC(N)=CC=C1C1=CC=C(N)C=C1 HFACYLZERDEVSX-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- HQABUPZFAYXKJW-UHFFFAOYSA-N butan-1-amine Chemical compound CCCCN HQABUPZFAYXKJW-UHFFFAOYSA-N 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000000921 elemental analysis Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229920006267 polyester film Polymers 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- DNXIASIHZYFFRO-UHFFFAOYSA-N pyrazoline Chemical compound C1CN=NC1 DNXIASIHZYFFRO-UHFFFAOYSA-N 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000011541 reaction mixture Substances 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 150000003334 secondary amides Chemical class 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- PBIMIGNDTBRRPI-UHFFFAOYSA-N trifluoro borate Chemical compound FOB(OF)OF PBIMIGNDTBRRPI-UHFFFAOYSA-N 0.000 description 1
- -1 tris(2-hydroxy-3-phenylcarbamoyl-1-naphthylazo)triphenylamine Chemical compound 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Landscapes
- Photoreceptors In Electrophotography (AREA)
- Indole Compounds (AREA)
Description
本発明は新規なトリスアゾ化合物およびその製
造方法に関する。
従来からトリスアゾ化合物あるいはジスアゾ化
合物が電子写真方式において使用される感光体の
一つの形態である積層型感光体の、電荷発生層に
用いられる電荷発生顔料として有効であることが
知られている。ここでいう積層型感光体とは、導
電性支持体上に、光によつて電荷担体を生成する
能力を有する電荷発生顔料を適切な方法、例えば
真空蒸着、顔料溶液の塗布あるいは樹脂溶液に、
顔料の微細粒子を分散した分散液の塗布などによ
り薄層として電荷発生層を形成せしめ、その上に
電荷発生層で生成した電荷担体を効率よく注入さ
れ得て、しかもその移動を行うところの電荷移動
層(通常この電荷移層は、電荷移動物質と結着樹
脂とからなる。)を形成せしめた感光体である。
従来、この種の感光体に使用されるジスアゾ化合
物としては、例えば特開昭47−37543号公報、あ
るいは特開昭52−55643号公報、などに開示され
ているベンジジン系ジスアゾ顔料あるいは、特開
昭53−132547号公報に開示されているトリフエニ
ルアミン系トリスアゾ顔料などが公知である。し
かしながら従来のトリスアゾ顔料又はジスアゾ顔
料を用いた積層型の感光体は、例えばヒ素セレン
(As2Se3)合金を用いた無機系の感光体と比較し
た場合、感度が低く、高速複写機の感光体として
適切でないなどの欠点を有している。
また近年レーザープリンター用感光体の要求も
高まつており、特に、半導体レーザーの波長域に
おける高感度感光体の開発が急務である。
本発明の目的は、先に述べた積層型の感光体に
おいて有効な新規なトリスアゾ化合物を提供する
ことにある。
また、本発明の他の目的は、上記のトリスアゾ
化合物の製造方法を提供することにある。
本発明のトリスアゾ化合物を用いた積層型感光
体は無機系の感光体と比較して感度の点でも遜色
のないものであり、且つ、800nmの波長の光まで
応答が極めて早いことが判つた。
すなわち本発明の一つは式〔〕
で示されるトリスアゾ化合物である。
この新規なトリスアゾ化合物は常温において黒
色の結晶体である。
第1図には式〔〕の化合物の赤外線吸収スペ
クトル(KBr錠剤法)を、第2図には熱分析図
(TG―DSCによる)を、また第3図にはX線回
折図を示した。第2図中、曲線Aは熱天秤曲線、
また曲線Bは示差熱曲線を示す。
上記の本発明のトリスアゾ化合物は、下記のよ
うな手段によつて製造することができる。
すなわち本発明の他の一つは式〔〕
で示される4,4′,4″―トリアミノトリフエニル
アミンをジアゾ化して一般式〔〕
(但し、Xはアニオン官能基を表わす。)
で示されるヘキサゾニウム塩とし、これを式
〔〕
で示される2―ヒドロキシ―3―フエニルカルバ
モイルベンゾ〔a〕カルバゾールと反応させるこ
とを特徴とする前記式〔〕で示されるトリスア
ゾ化合物の製造方法である。
この製造方法にあつて式〔〕の4,4′,4″―
トリアミノトリフエニルアミンのジアゾ化はこれ
を希塩酸あるいは希硫酸のような希薄無機酸中で
亜硝酸ナトリウム水溶液を−10℃ないし10℃にて
添加することにより行なわれる。このジアゾ化反
応は、およそ30分間から3時間で完結する。さら
に反応混合物に、例えばホウフツ化水素酸あるい
はホウフツ化ナトリウム水溶液などを加えて式
〔〕のヘキサゾニウム塩として沈殿させ、結晶
を取してから次の反応に用いることが望まし
い。次いで、このヘキサゾニウム塩に式〔〕の
2―ヒドロキシ―3―フエニルカルバモイルベン
ゾ〔a〕カルバゾールを作用してカツプリング反
応を起こさせることにより行なわれる。実際には
この反応は、N,N―ジメチルホルムアミド
(DMF)やジメチルスルホキシドなどの有機溶媒
にヘキサゾニウム塩およびカツプラーを混合溶解
しておき、これに約−10℃ないし40℃にて酢酸ナ
トリウム水溶液などのアルカリ水溶液を滴下する
ことにより行なわれる。この反応はおよそ5分間
ないし3時間で完結する。反応終了後、析出して
いる結晶を取し、適切な方法により精製(例え
ば水あるいは/および有機溶剤による洗浄、再結
晶法など)することにより上記式〔〕のトリス
アゾ化合物の製造は完了する。
このようにして製造される本発明のトリスアゾ
化合物の製造例を示せば次の通りである。
製造例
4,4′,4″―トリアミノトリフエニルアミン8.7
grを濃塩酸150ml及び水130mlから調製した希塩
酸に加え室温で約30分間よく撹拌する。次にこの
混合物を約0℃に冷却し、亜硝酸ナトリウム7.7
grを水30mlに溶解した溶液を−3゜〜2℃の温度
で約20分間に亘つて滴下した。その後、同温度で
約1時間撹拌し、微量の不溶物を別し、液に
42%硼弗化水素酸水溶液60mlを加え、析出する沈
澱を取し水洗した後、乾燥して15.3gr(収率
87%)のヘキサゾニウムトリフルオロボレートを
黄色結晶(分解点:約129℃)として得た。
次に上記のようにして得たヘキサゾニウム塩
1.2grおよび2―ヒドロキシ―3―フエニルカ
ルバモイルベンゾ〔a〕カルバゾール2.5grを
DMF210mlに溶解し、これに酢酸ナトリウム2.9
grを水30mlに溶解した溶液を室温にて約5分間
で滴下した。滴下終了後、同温度で更に3時間撹
拌したのち、析出している結晶を取した。
得られた粗結晶ケーキをDMF300mlに分散し、
室温で1時間撹拌したのち、再び結晶を取し、
更にこの操作を4回くり返した。その後結晶を水
洗して乾燥し、本発明のトリスアゾ化合物を黒色
結晶として1.5gr(収率53%)得た。
分解点:300℃以上
元素分析値:
実測値 計算値
C% 75.53 75.69
H% 3.98 4.16
N% 12.85 13.19
赤外線吸収スペクトル(KBr錠剤法)
Vc=o(第2アミド) 1670cm-1
本発明のトリスアゾ化合物は前述のとおり積層
型感光体の電荷発生顔料として有効であり、その
点を明らかにするために以下に具体的な用途例を
示す。また本発明の進歩性を明らかにするために
従来のアゾ化合物との比較、あるいは無機系の感
光体との比較も同様に示す。
用途例
本発明のトリスアゾ化合物76重量部、ポリエス
テル樹脂(バイロン200,株式会社東洋紡績製)
のテトラヒドロフラン溶液(固形分濃度2%)
1260重量部、およびテトラヒドロフラン3700重量
部をボールミル中で粉砕混合し、得られた分散液
をアルミニウム蒸着したポリエステルベース(導
電性支持体)のアルミ面上にドクターブレードを
用いて塗布し、自然乾燥して、厚さ約1μmの電荷
発生層を形成した。一方、1―フエニル―3―
(4―ジエチルアミノスチリル)―5―(4―ジ
エチルアミノフエニル)ピラゾリン1重量部、ポ
リカーボネート樹脂(パンライトK1300,株式会
社帝人製)1重量部およびテトラヒドロフラン8
重量部を混合溶解して溶液としたのち、これを前
記電荷発生層上にドクターブレードで塗布し80℃
で2分間次いで100℃で5分乾燥して厚さ約20μm
の電荷移動層を形成せしめ、第4図に示した積層
型の感光体(A)を作成した。
比較のために上記の感光体作成手順に従い、本
発明のトリスアゾ化合物のかわりに前述した特開
昭53−132547号公報に開示されているトリフエニ
ルアミン系トリスアゾ顔料である4,4′,4″―ト
リス(2―ヒドロキシ―3―フエニルカルバモイ
ル―1―ナフチルアゾ)トリフエニルアミン〔比
較顔料(1)〕を用いた以外は全く同様にして比較用
感光体(B)を作成した。
また比較のために、前述した特開昭47−37543
号公報あるいは特開昭52−55643に開示されてい
るベンジジン系ジスアゾ顔料である4,4′―ビス
(2―ヒドロキシ―3―フエニルカルバモイル―
1―ナフチルアゾ)―3,3′―ジクロルフエニル
〔比較顔料(2)〕1.08重量部をエチレンジアミン
24.46重量部に溶解し、この溶液に撹拌しながら
n―ブチルアミン20.08重量部を加え、更にテト
ラヒドロフラン54.36重量部を加えて電荷発生層
塗布液を作成した。次にこの塗布液をアルミ蒸着
したポリエステルフイルム上にドクターブレード
を用いて塗布し、80℃で5分間乾燥し、厚さ約
0.5μmの電荷発生層を形成した。前記電荷発生層
上に1―フエニル―3―(4―ジエチルアミノス
チリル)―5―(4―ジエチルアミノフエニル)
―ピラゾリン1重量部、ポリカーボネート樹脂
(パンライトK―1300:帝人化成株式会社製)1
重量部、及びテトラヒドロフラン8重量部からな
る溶液をドクターブレードにて塗布し、80℃で2
分間、次いで100℃で5分間乾燥して厚さ約20μm
の電荷移動層を形成し比較用感光体(C)を作成し
た。
さらに、比較のため、Se―As(40wt%)合金
を蒸着原料としてアルミニウム基板上に、基板温
度200℃、蒸着源温度410〜415℃で10-6Torrの真
空下に蒸着し、約60μmの感光層を有するAs2Se3
感光体を作成した。このようにして作成した無機
系の感光体を比較用感光体(D)とした。
次に上記のようにして作成した4種の感光体す
なわち、
1 本発明のトリスアゾ化合物を用いた積層型感
光体 ……感光体(A)
2 比較顔料(1)を用いた積層型感光体
……感光体(B)
3 比較顔料(2)を用いた積層型感光体
……感光体(C)
4 As2Se3感光体 ……感光体(D)
について市販の静電複写紙試験装置(川口電機製
作所製SP―428型)を用いてその静電特性を測定
した。
すなわち、まず感光体に−6KV(あるいは+
6KV)のコロナ放電を20秒間行なつて、負(あ
るいは正)に帯電せしめた後、20秒間暗所に放置
し、その時の表面電位Vpo(V)を測定し、次い
でタングステンランプによつてその表面が照度20
ルツクスになるようにして光を照射しその表面電
位がVpoの1/2,1/10になるまでの時間(秒)を
求め、露光量E1/2,E1/10(ルツクス・秒)を
算出した。その結果を表1に示す。
The present invention relates to a novel trisazo compound and a method for producing the same. It has been known that trisazo compounds or disazo compounds are effective as charge-generating pigments used in charge-generating layers of laminated photoreceptors, which are one form of photoreceptor used in electrophotography. The laminated photoreceptor referred to herein means that a charge-generating pigment having the ability to generate charge carriers by light is deposited on a conductive support by an appropriate method, such as vacuum deposition, coating with a pigment solution, or coating with a resin solution.
A charge generation layer is formed as a thin layer by coating a dispersion liquid containing fine particles of pigment, and the charge carriers generated in the charge generation layer can be efficiently injected onto the layer and the charge carriers can be transferred. It is a photoreceptor on which a charge transfer layer (generally, the charge transfer layer consists of a charge transfer substance and a binder resin) is formed.
Conventionally, disazo compounds used in this type of photoreceptor include benzidine-based disazo pigments disclosed in, for example, JP-A-47-37543 and JP-A-52-55643; A triphenylamine trisazo pigment disclosed in Japanese Patent Publication No. 132547/1984 is well known. However, conventional laminated photoreceptors using trisazo pigments or disazo pigments have low sensitivity when compared to inorganic photoreceptors using, for example, arsenic selenium (As 2 Se 3 ) alloys, making them difficult to use in high-speed copying machines. It has disadvantages such as not being suitable for the body. In addition, the demand for photoreceptors for laser printers has increased in recent years, and there is an urgent need to develop photoreceptors with high sensitivity in the wavelength range of semiconductor lasers. An object of the present invention is to provide a novel trisazo compound that is effective in the above-mentioned laminated photoreceptor. Another object of the present invention is to provide a method for producing the above trisazo compound. It was found that the laminated photoreceptor using the trisazo compound of the present invention is comparable in sensitivity to inorganic photoreceptors, and has an extremely fast response to light with a wavelength of 800 nm. That is, one of the present invention is the formula [] It is a trisazo compound shown by This new trisazo compound is a black crystalline substance at room temperature. Figure 1 shows the infrared absorption spectrum (KBr tablet method) of the compound of formula [], Figure 2 shows the thermal analysis diagram (by TG-DSC), and Figure 3 shows the X-ray diffraction diagram. . In Figure 2, curve A is a thermobalance curve;
Curve B shows a differential thermal curve. The above trisazo compound of the present invention can be produced by the following method. That is, another aspect of the present invention is the formula [] By diazotizing 4,4′,4″-triaminotriphenylamine represented by the general formula [] (However, X represents an anionic functional group.) A hexazonium salt represented by the formula [] This is a method for producing a trisazo compound represented by the above formula [], which comprises reacting with 2-hydroxy-3-phenylcarbamoylbenzo[a]carbazole represented by the formula []. In this manufacturing method, 4, 4′, 4″ of the formula []
Diazotization of triaminotriphenylamine is carried out by adding an aqueous solution of sodium nitrite in a dilute inorganic acid such as dilute hydrochloric acid or dilute sulfuric acid at -10°C to 10°C. This diazotization reaction is completed in approximately 30 minutes to 3 hours. Furthermore, it is desirable to add, for example, hydroborofluoric acid or an aqueous sodium borofluoride solution to the reaction mixture to precipitate the hexazonium salt of formula [], and use it in the next reaction after crystallizing it. Next, this hexazonium salt is reacted with 2-hydroxy-3-phenylcarbamoylbenzo[a]carbazole of formula [] to cause a coupling reaction. In reality, this reaction is carried out by mixing and dissolving a hexazonium salt and coupler in an organic solvent such as N,N-dimethylformamide (DMF) or dimethyl sulfoxide, and adding an aqueous solution of sodium acetate to this mixture at about -10°C to 40°C. This is done by dropping an alkaline aqueous solution. This reaction is complete in approximately 5 minutes to 3 hours. After completion of the reaction, the precipitated crystals are collected and purified by an appropriate method (for example, washing with water and/or an organic solvent, recrystallization method, etc.) to complete the production of the trisazo compound of the above formula []. Examples of the production of the trisazo compound of the present invention produced in this manner are as follows. Production example 4,4′,4″-triaminotriphenylamine 8.7
Add gr to dilute hydrochloric acid prepared from 150 ml of concentrated hydrochloric acid and 130 ml of water, and stir well at room temperature for about 30 minutes. The mixture was then cooled to approximately 0°C and sodium nitrite was added to 7.7°C.
A solution of gr dissolved in 30 ml of water was added dropwise over a period of about 20 minutes at a temperature of -3° to 2°C. After that, stir at the same temperature for about 1 hour to remove traces of insoluble matter and turn it into a liquid.
Add 60ml of 42% borohydrofluoric acid aqueous solution, remove the precipitate, wash with water, and dry to give 15.3g (yield).
87%) of hexazonium trifluoroborate was obtained as yellow crystals (decomposition point: approximately 129°C). Next, the hexazonium salt obtained as above
1.2 gr and 2.5 gr of 2-hydroxy-3-phenylcarbamoylbenzo[a]carbazole.
Dissolve in 210ml of DMF and add 2.9ml of sodium acetate to this.
A solution of gr dissolved in 30 ml of water was added dropwise at room temperature over about 5 minutes. After the addition was completed, the mixture was further stirred at the same temperature for 3 hours, and then the precipitated crystals were collected. Disperse the obtained crude crystal cake in 300ml of DMF,
After stirring at room temperature for 1 hour, the crystals were collected again.
This operation was repeated four more times. Thereafter, the crystals were washed with water and dried to obtain 1.5 gr (yield: 53%) of the trisazo compound of the present invention as black crystals. Decomposition point: 300℃ or higher Elemental analysis value: Actual value Calculated value C% 75.53 75.69 H% 3.98 4.16 N% 12.85 13.19 Infrared absorption spectrum (KBr tablet method) Vc=o (secondary amide) 1670 cm -1 Trisazo compound of the present invention As mentioned above, it is effective as a charge-generating pigment for laminated photoreceptors, and to clarify this point, specific application examples are shown below. Further, in order to clarify the inventive step of the present invention, a comparison with conventional azo compounds or an inorganic photoreceptor is also shown. Application example: 76 parts by weight of the trisazo compound of the present invention, polyester resin (Vylon 200, manufactured by Toyobo Co., Ltd.)
Tetrahydrofuran solution (solid content concentration 2%)
1,260 parts by weight and 3,700 parts by weight of tetrahydrofuran were pulverized and mixed in a ball mill, and the resulting dispersion was applied onto the aluminum surface of an aluminum-deposited polyester base (conductive support) using a doctor blade, and air-dried. A charge generation layer with a thickness of about 1 μm was formed. On the other hand, 1-phenyl-3-
1 part by weight of (4-diethylaminostyryl)-5-(4-diethylaminophenyl)pyrazoline, 1 part by weight of polycarbonate resin (Panlite K1300, manufactured by Teijin Ltd.), and 8 parts by weight of tetrahydrofuran.
After mixing and dissolving parts by weight to form a solution, this was applied onto the charge generation layer using a doctor blade and heated at 80°C.
Dry for 2 minutes at 100°C for 5 minutes to a thickness of approximately 20μm.
A charge transfer layer was formed, and a laminated photoreceptor (A) shown in FIG. 4 was prepared. For comparison, the above photoreceptor preparation procedure was followed, and instead of the trisazo compound of the present invention, 4,4',4'', which is the triphenylamine trisazo pigment disclosed in JP-A-53-132547, was used. A comparative photoreceptor (B) was prepared in exactly the same manner except that tris(2-hydroxy-3-phenylcarbamoyl-1-naphthylazo)triphenylamine [comparative pigment (1)] was used. Therefore, the above-mentioned Japanese Patent Application Laid-open No. 47-37543
4,4'-bis(2-hydroxy-3-phenylcarbamoyl-
1-naphthylazo)-3,3'-dichlorophenyl [comparative pigment (2)] 1.08 parts by weight of ethylenediamine
20.08 parts by weight of n-butylamine was added to this solution with stirring, and 54.36 parts by weight of tetrahydrofuran was further added to prepare a charge generation layer coating solution. Next, this coating solution was applied onto a polyester film coated with aluminum using a doctor blade, dried at 80℃ for 5 minutes, and the thickness was approx.
A charge generation layer of 0.5 μm was formed. 1-phenyl-3-(4-diethylaminostyryl)-5-(4-diethylaminophenyl) on the charge generation layer.
- 1 part by weight of pyrazoline, 1 part of polycarbonate resin (Panlite K-1300: manufactured by Teijin Kasei Ltd.)
A solution consisting of 1 part by weight and 8 parts by weight of tetrahydrofuran was applied with a doctor blade and heated at 80℃ for 2 hours.
minutes, then dried at 100℃ for 5 minutes to a thickness of approximately 20μm.
A comparative photoreceptor (C) was prepared by forming a charge transfer layer. Furthermore, for comparison, a Se-As (40 wt%) alloy was deposited on an aluminum substrate as a deposition raw material under a vacuum of 10 -6 Torr at a substrate temperature of 200°C and a deposition source temperature of 410 to 415°C. As 2 Se 3 with photosensitive layer
A photoreceptor was created. The inorganic photoreceptor thus produced was designated as a comparison photoreceptor (D). Next, four types of photoreceptors were prepared as described above, namely: 1. A laminated photoreceptor using the trisazo compound of the present invention...Photoreceptor (A) 2. A laminated photoreceptor using the comparative pigment (1)
...Photoreceptor (B) 3 Laminated photoreceptor using comparative pigment (2)
...Photoconductor (C) 4 As 2 Se 3 Photoconductor ...The electrostatic properties of the photoconductor (D) were measured using a commercially available electrostatic copying paper testing device (Model SP-428 manufactured by Kawaguchi Denki Seisakusho). . In other words, first apply -6KV (or +
After performing a corona discharge of 6KV for 20 seconds to charge it negatively (or positively), leave it in a dark place for 20 seconds, measure the surface potential Vpo (V) at that time, and then charge it with a tungsten lamp. Surface illuminance 20
Irradiate light so that the surface potential becomes 1/2 and 1/10 of Vpo, and calculate the exposure amount E1/2 and E1/10 (lux seconds). did. The results are shown in Table 1.
【表】
また以上の感光体について長波長の光に対する
感度を調べるために、以下の測定を行なつた。
まず感光体を暗所でコロナ放電により帯電し
(感光体(A),(B),(C)はマイナス帯電、感光体(D)は
プラス帯電)、その表面電位を測定し、ついでそ
の上にモノクロメーターを用いて、分光した
1μW/cm2の単色光を照射した。そして、その表
面電位が1/2に減衰するまでの時間(秒)を求め
(この時暗減衰による表面電位の減衰分は補正し
た)、露光量(μW.sec/cm2)を求めて光減衰速度
(Volt・cm2・μW-1・sec-1)を算出し、その結果
を表―2に示した。[Table] In order to investigate the sensitivity of the above photoreceptor to long wavelength light, the following measurements were performed. First, the photoreceptor is charged by corona discharge in a dark place (photoreceptors (A), (B), and (C) are negatively charged, and photoreceptor (D) is positively charged), and its surface potential is measured. Spectroscopy was performed using a monochromator.
Monochromatic light of 1 μW/cm 2 was irradiated. Then, the time (seconds) until the surface potential attenuates to 1/2 is determined (at this time, the attenuation of the surface potential due to dark decay is corrected), the exposure amount (μW.sec/cm 2 ) is determined, and the amount of light is The attenuation rate (Volt・cm 2・μW −1・sec −1 ) was calculated and the results are shown in Table 2.
【表】
表―1、表―2の結果から明らかなように、本
発明にかかわる感光体(A)は他の感光体と比較して
感度の点で遜色のないものであり、特に半導体レ
ーザーの波長域(800nm前後)においては、公知
の感光体に比較し、数倍の感度を有していること
が判る。
以上述べて来たように、本発明のトリスアゾ化
合物は電子写真感光体用の素材料として、きわめ
て有用な材料であり、また有機物であるがゆえの
軽量低コストなどの多くの利点を兼ね備なえてお
り、本発明のトリスアゾ化合物がきわめてすぐれ
た材料であることが良く理解出来るであろう。[Table] As is clear from the results in Tables 1 and 2, the photoreceptor (A) according to the present invention is comparable in sensitivity to other photoreceptors, and is particularly suitable for semiconductor lasers. It can be seen that in the wavelength range (around 800 nm), the sensitivity is several times higher than that of known photoreceptors. As mentioned above, the trisazo compound of the present invention is an extremely useful material for electrophotographic photoreceptors, and because it is an organic material, it has many advantages such as being lightweight and low cost. It can be clearly understood that the trisazo compound of the present invention is an extremely excellent material.
第1図は本発明のトリスアゾ化合物の赤外線吸
収スペクトル、第2図は熱分析図、第3図はX線
回折図を示す。第4図は、本発明のトリスアゾ化
合物の用途例である感光体の構成例である。
1…導電性支持体、2…ポリエステルベース、
3…アルミニウム蒸着膜、4…電荷発生層、5…
電荷移動層。
FIG. 1 shows an infrared absorption spectrum of the trisazo compound of the present invention, FIG. 2 shows a thermal analysis diagram, and FIG. 3 shows an X-ray diffraction diagram. FIG. 4 shows an example of the structure of a photoreceptor which is an example of the use of the trisazo compound of the present invention. 1... Conductive support, 2... Polyester base,
3... Aluminum vapor deposited film, 4... Charge generation layer, 5...
Charge transfer layer.
Claims (1)
アミンをジアゾ化して一般式〔〕 (但し、Xはアニオン官能基を表わす。) で示されるヘキサゾニウム塩とし、これを式
〔〕 で示される2―ヒドロキシ―3―フエニルカルバ
モイルベンゾ〔a〕カルバゾールと反応させるこ
とを特徴とする式〔〕 で示されるトリスアゾ化合物の製造方法。[Claims] 1 Formula [] A trisazo compound represented by 2 formula [] By diazotizing 4,4′,4″-triaminotriphenylamine represented by the general formula [] (However, X represents an anionic functional group.) A hexazonium salt represented by the formula [] Formula [] characterized by reaction with 2-hydroxy-3-phenylcarbamoylbenzo[a]carbazole represented by A method for producing a trisazo compound shown in
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8811181A JPS57203062A (en) | 1981-06-10 | 1981-06-10 | Novel triazo compound and its preparation |
US06/379,688 US4507471A (en) | 1981-05-28 | 1982-05-19 | Trisazo compounds prepared from 4,4',4"-triaminotriphenylamine and 2-hydroxy-3-phenylcarbamoylbenzo[a]carbazole derivatives |
DE3219765A DE3219765C2 (en) | 1981-05-28 | 1982-05-26 | Trisazo compounds and process for their preparation |
FR8209435A FR2506776B1 (en) | 1981-05-28 | 1982-05-28 | NOVEL TRISAZOIC COMPOUNDS AND THEIR MANUFACTURING METHOD |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8811181A JPS57203062A (en) | 1981-06-10 | 1981-06-10 | Novel triazo compound and its preparation |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57203062A JPS57203062A (en) | 1982-12-13 |
JPH0158181B2 true JPH0158181B2 (en) | 1989-12-11 |
Family
ID=13933767
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8811181A Granted JPS57203062A (en) | 1981-05-28 | 1981-06-10 | Novel triazo compound and its preparation |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57203062A (en) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6017761A (en) * | 1983-07-12 | 1985-01-29 | Ricoh Co Ltd | Printing plate for electrophotographic plate making |
JPS60123848A (en) * | 1983-12-09 | 1985-07-02 | Ricoh Co Ltd | Electrophotographic sensitive body |
JPH061385B2 (en) * | 1984-12-01 | 1994-01-05 | 株式会社リコー | Electrophotographic photoreceptor |
JPS62192748A (en) * | 1986-02-19 | 1987-08-24 | Dainichi Color & Chem Mfg Co Ltd | Electrophotographic sensitive body |
JPS62192747A (en) * | 1986-02-19 | 1987-08-24 | Dainichi Color & Chem Mfg Co Ltd | Electrophotographic sensitive body |
JPS62192749A (en) * | 1986-02-19 | 1987-08-24 | Dainichi Color & Chem Mfg Co Ltd | Electrophotogrpahic sensitive body |
JPS62192750A (en) * | 1986-02-19 | 1987-08-24 | Dainichi Color & Chem Mfg Co Ltd | Electrophotographic sensitive body |
-
1981
- 1981-06-10 JP JP8811181A patent/JPS57203062A/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS57203062A (en) | 1982-12-13 |
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