JPH0138346B2 - - Google Patents
Info
- Publication number
- JPH0138346B2 JPH0138346B2 JP54162735A JP16273579A JPH0138346B2 JP H0138346 B2 JPH0138346 B2 JP H0138346B2 JP 54162735 A JP54162735 A JP 54162735A JP 16273579 A JP16273579 A JP 16273579A JP H0138346 B2 JPH0138346 B2 JP H0138346B2
- Authority
- JP
- Japan
- Prior art keywords
- grid
- resistor
- electrodes
- electron gun
- voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000012212 insulator Substances 0.000 claims description 7
- 238000010894 electron beam technology Methods 0.000 description 7
- 230000005684 electric field Effects 0.000 description 3
- 230000005686 electrostatic field Effects 0.000 description 3
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/92—Means forming part of the tube for the purpose of providing electrical connection to it
Description
【発明の詳細な説明】
本発明は少なくとも１本の電子ビームを射出す
る電子銃構体に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an electron gun assembly that emits at least one electron beam.
例えば多電子ビームを射出する電子銃構体を内
装する通常のカラー受像管に於ては、各電子ビー
ムがそれぞれ別個の主電子レンズを通過したの
ち、ターゲツト上の１点に集束される。この主電
子レンズは一般に静電界で形成され、電子ビーム
がこの静電界によつて形成される主電子レンズを
通過する間に集束されるようになつている。 For example, in a normal color picture tube equipped with an electron gun assembly that emits multiple electron beams, each electron beam passes through a separate main electron lens and is focused on a single point on a target. This main electron lens is generally formed by an electrostatic field such that the electron beam is focused while passing through the main electron lens formed by the electrostatic field.
一般に、この静電界で形成される主電子レンズ
は電子ビームの経路に直角に配設され、かつ電子
ビームが通過する開孔部の穿設された少なくとも
２個の隣接電極間に形成される。この主電子レン
ズの特性は対設する電極間に印加される電圧、開
孔部の形状、大きさ、電極間の距離などにより変
化させることが可能である。 Generally, the main electron lens formed by this electrostatic field is disposed perpendicular to the path of the electron beam and is formed between at least two adjacent electrodes having an aperture through which the electron beam passes. The characteristics of this main electron lens can be changed by changing the voltage applied between opposing electrodes, the shape and size of the aperture, the distance between the electrodes, etc.
一方電子銃構体の性能は一般に前記主電子レン
ズの倍率とその球面収差が少ない程良いとされて
おり、このために長焦点距離の主電子レンズとす
ることが有効であるとされている。即ち、最も効
果的な電圧を電子銃構体の各電極に印加する場合
は受像管のステム部で放電を起さない範囲としな
ければならない。また開孔部の形状、大きさは受
像管のネツク直径が他の電気的条件から制約を受
けるため、任意に大きく設計することが不可能で
ある。更に電極間の距離を大きくすることは受像
管のネツク内壁に発生する浮遊電界や電子銃構体
内の他の不所望な電界によつて主電子レンズの特
性が影響を受けるため、これも適当な手段とはな
らない。いずれにせよ、主電子レンズの設計は受
像管の設計から定められる物理的条件によつて制
約を受けることになる。特にカラー受像管に於て
は、多電子ビームを射出する電子銃構体をネツク
に内装する必要があるので、前述した制約は更に
きびしくなる。 On the other hand, it is generally said that the performance of the electron gun assembly is better as the magnification of the main electron lens and its spherical aberration are smaller, and for this reason, it is said to be effective to use a main electron lens with a long focal length. That is, when applying the most effective voltage to each electrode of the electron gun assembly, it must be within a range that does not cause discharge in the stem of the picture tube. Further, the shape and size of the opening cannot be designed arbitrarily large because the diameter of the picture tube neck is limited by other electrical conditions. Furthermore, increasing the distance between the electrodes will also affect the characteristics of the main electron lens due to stray electric fields generated on the inner wall of the picture tube neck and other undesired electric fields within the electron gun structure. It is not a means. In any case, the design of the main electron lens is constrained by physical conditions determined by the design of the picture tube. Particularly in color picture tubes, the above-mentioned restrictions become even more severe because it is necessary to internally incorporate an electron gun assembly for emitting multiple electron beams.
前述の制約を回避するための一般的な構造とし
て、長焦点距離の主電子レンズを形成するため
に、電極電圧および電極数を許容される範囲内で
組合わせた電子銃構体があり、例えば特開昭51−
76072号公報、特開昭51−77061号公報に示されて
いるのがその例である。 A common structure for circumventing the above-mentioned limitations is an electron gun assembly in which electrode voltages and numbers of electrodes are combined within permissible ranges to form a long focal length main electron lens, e.g. 1971-
Examples thereof are shown in Publication No. 76072 and Japanese Unexamined Patent Publication No. 77061/1983.
これらの例にみられるように電極の電圧及び種
類を組合わせる構造は通常電子銃構体の構造を複
雑にしたり、主電子レンズを形成させるのに更に
他の電圧を付与しなければならず、経済性を損う
のが常である。 As seen in these examples, the structure of combining the voltages and types of electrodes usually complicates the structure of the electron gun structure, requires additional voltage to be applied to form the main electron lens, and is not economical. It usually harms sexuality.
また一般に電子レンズの性能を向上させるに
は、前述した例も含めて電極、電圧が高くなけれ
ばならず、それに伴つて受像管のステム部での放
電を防止して受像管の信頼性を確保するのに特別
な工夫を施す必要があり、その結果更に経済性を
低下させることになる。 In general, to improve the performance of an electronic lens, including the example mentioned above, the electrodes and voltage must be high, and along with this, it is necessary to prevent discharge in the stem of the picture tube and ensure the reliability of the picture tube. It is necessary to take special measures to achieve this, which further reduces economic efficiency.
その解決方法の一つとして電子銃構体の所定電
極に陽極電圧を抵抗分割によつて付与し、ステム
部にはあまり高電圧が印加されないような構造に
した電子銃構体がある。例えば実開昭48−21561
号公報などに記載されている電子銃構体がそれで
あるが、カラー受像管などでは独立した抵抗器を
電子銃構体とネツクとの間に配設する空間がな
く、この空間を大きくするためにはネツクを太く
したり、電子銃構体を小形にしなくてはならな
い。またたとえ空間的に余裕があつても、ここに
挿入される抵抗器の許容負荷が小さくなり実用的
でない。 One solution to this problem is to provide an electron gun structure in which an anode voltage is applied to a predetermined electrode of the electron gun structure by resistance division, and a high voltage is not applied to the stem portion. For example, Utsukai 48-21561
This is the case with the electron gun structure described in the publication, but in color picture tubes, etc., there is no space to place an independent resistor between the electron gun structure and the net, so in order to enlarge this space, it is necessary to The net had to be made thicker and the electron gun structure had to be made smaller. Furthermore, even if there is space, the permissible load of the resistor inserted here will be small, making it impractical.
更に他の構造として電子銃構体の一部である絶
縁支持体の所定部に抵抗物質からなる膜状抵抗層
を形成し、陽極電圧をこの膜状抵抗層を介して分
割して、例えば25kVの陽極電圧を数kV、数
100Vなどにして所定電極に印加し、ステム部で
は高い電圧にならないようにした電子銃構体があ
るが、これも膜状抵抗層の許容負荷が小さく実用
的でない。 Furthermore, as another structure, a film-like resistance layer made of a resistive material is formed on a predetermined part of an insulating support that is a part of the electron gun structure, and the anode voltage is divided through this film-like resistance layer, for example, 25 kV. The anode voltage is several kV, several
There is an electron gun structure in which a voltage such as 100V is applied to a predetermined electrode so that the voltage does not become high at the stem part, but this is also not practical because the allowable load of the film resistance layer is small.
本発明は前述した従来の電子銃構体の諸欠点に
鑑みなされたものであり、陽極電圧を所定電極に
効果的に抵抗分割によつて印加することが可能な
電子銃構体を提供することを目的としている。 The present invention has been made in view of the various drawbacks of the conventional electron gun assembly described above, and an object of the present invention is to provide an electron gun assembly that can effectively apply an anode voltage to a predetermined electrode by resistance division. It is said that
次に本発明の電子銃構体の一実施例としてのバ
イポテンシヤル形電子銃構体を第１図によつて説
明する。 Next, a bipotential type electron gun assembly as an embodiment of the electron gun assembly of the present invention will be explained with reference to FIG.
この電子銃構体１１はヒータ１２を内装する陰
極１３、第１グリツド１４、第２グリツド１５、
第３グリツド１６、第４グリツド１７及びコンバ
ーゼンス電極１８からなる複数個の電極を有し、
コンバーゼンス電極１８以外はそれぞれ植設部１
３1，１４1，１５1，１６1，１７1を介して各電極
間の間隔が所定値になるように一対の支持体１
９，１９に植設されている。コンバーゼンス電極
１８については、特に植設部はなく、第４グリツ
ド１７に導電接続され、その側壁部に設けられた
バルブスペーサ２０を介してネツク２１内壁の図
示しない導電被膜に導電接続されている。そして
１対の支持体１９，１９はそれぞれ絶縁体１９ａ
と、この絶縁体１９ａの一部に一体に接合された
斜線で示す抵抗体１９ｂとからなり、その抵抗体
１９ｂに第２グリツド１５の植設部１５1、第３
グリツド１６の植設部１６1及び第４グリツド１
７の植設部１７1がそれぞれ植設され、特に第２
グリツド１５はリード線２２、ステムピン２３、
外部電源２４を介して接地されている。 This electron gun assembly 11 includes a cathode 13 housing a heater 12, a first grid 14, a second grid 15,
It has a plurality of electrodes consisting of a third grid 16, a fourth grid 17 and a convergence electrode 18,
Each implantation part 1 except for the convergence electrode 18
3 1 , 14 1 , 15 1 , 16 1 , 17 1 so that the distance between each electrode becomes a predetermined value.
It is planted on 9,19. The convergence electrode 18 has no particular implanted part, and is electrically connected to the fourth grid 17, and electrically connected to a conductive coating (not shown) on the inner wall of the neck 21 via a valve spacer 20 provided on the side wall thereof. The pair of supports 19 and 19 each have an insulator 19a.
and a resistor 19b indicated by diagonal lines which is integrally joined to a part of this insulator 19a, and the implanted part 15 1 of the second grid 15 and the third grid are connected to the resistor 19b.
Planting part 16 1 of grid 16 and fourth grid 1
7 planting parts 17 1 are planted respectively, especially the second
The grid 15 includes a lead wire 22, a stem pin 23,
It is grounded via an external power supply 24.
前記抵抗体１９ｂとしてはシリカガラスに
Fe2o3、MnO2、V2O5またはCu2Oなどを混在させ
たガラス抵抗体がガラスからなる絶縁体１９ａと
の接合上適している。 The resistor 19b is made of silica glass.
A glass resistor containing a mixture of Fe 2 O 3 , MnO 2 , V 2 O 5 or Cu 2 O is suitable for bonding to the insulator 19a made of glass.
さて前記した電子銃構体１１に図示しない陽極
端子及び導電被膜を介してバルブスペーサ２０に
陽極電圧が印加されると、この陽極電圧はコンバ
ーゼンス電極１８及び第４グリツド１７に印加さ
れ、この第４グリツド１７の植設部１７1、抵抗
体１９ｂ、第２グリツド１５の植設部１５1を介
して第２グリツド１５に印加される。またこの第
２グリツド１５にはリード線２２、ステムピン２
３を介して外部電源２４より所定の電圧が印加さ
れる。即ち、第４グリツド１７に印加される約
25kVの陽極電圧は抵抗体１９ｂを介して第２グ
リツド１４に印加され、第３グリツド１６には抵
抗体１９ｂの抵抗分割比によつて所定の電圧が印
加されることになる。 Now, when an anode voltage is applied to the valve spacer 20 through the anode terminal and the conductive film (not shown) in the electron gun assembly 11, this anode voltage is applied to the convergence electrode 18 and the fourth grid 17, and the fourth grid The voltage is applied to the second grid 15 through the implanted portion 17 1 of No. 17, the resistor 19b, and the implanted portion 15 1 of the second grid 15. Also, this second grid 15 includes a lead wire 22 and a stem pin 2.
A predetermined voltage is applied from an external power supply 24 via 3. That is, the approx.
An anode voltage of 25 kV is applied to the second grid 14 via the resistor 19b, and a predetermined voltage is applied to the third grid 16 depending on the resistance division ratio of the resistor 19b.
この様な電子銃構体１１で第４グリツド１７の
植設部１７1と第３グリツド１６の植設部１６1の
間隔をl1、第３グリツド１６の植設部１６1と第
２グリツド１５の植設部１５1の間隔をl2、第４
グリツド１７に印加される陽極電圧をVg4、第２
グリツド１５に印加される電圧をVg2とすると、
第３グリツド１６に印加される電圧Vg3は、
Vg3＝Vg2＋（Vg4−Vg2）l2／l1＋l2 ……(1)
したがつて
l2／l1＋l2＝Vg3−Vg2／Vg4−Vg2 ……(2)
で表わされる。 In such an electron gun structure 11, the distance between the implanted portion 17 1 of the fourth grid 17 and the implanted portion 16 1 of the third grid 16 is l 1 , and the distance between the implanted portion 16 1 of the third grid 16 and the implanted portion 16 of the second grid 15 is The distance between the planting parts 15 1 is l 2 , and the fourth
The anode voltage applied to the grid 17 is Vg 4 , the second
If the voltage applied to the grid 15 is Vg 2 , then
The voltage Vg 3 applied to the third grid 16 is: Vg 3 = Vg 2 + (Vg 4 - Vg 2 ) l 2 / l 1 + l 2 ... (1) Therefore, l 2 / l 1 + l 2 = Vg 3 −Vg 2 /Vg 4 −Vg 2 ...(2)
この(2)式の（l1＋l2）は第２グリツド１５及び
第４グリツド１７の構造により任意に選ぶことが
でき、その（l1＋l2）に対して各電極の電圧Vg2、
Vg3、Vg4が与えられると、(2)式により第３グリ
ツド１６の植設部１６1の位置が定められる。 (l 1 + l 2 ) in equation (2) can be arbitrarily selected depending on the structure of the second grid 15 and fourth grid 17, and for that (l 1 + l 2 ), the voltage Vg 2 of each electrode,
When Vg 3 and Vg 4 are given, the position of the planting portion 16 1 of the third grid 16 is determined by equation (2).
したがつて、第２図の等価回路に示すようにテ
レビジヨンセツトのフライバツクトランスで発生
する高電圧は安定化回路を介してカラー受像管の
陽極端子は印加され、導電被膜、バルブスペーサ
２０、コンバーゼンス電極１８を介して第４グリ
ツド１７に印加される。そして、この第４グリツ
ド１７に印加された高電圧Vg4は間隔l1に対応す
る抵抗体１９ｂの抵抗R1を介して第３グリツド
１６に印加され、更に間隔l2に対応する抵抗体１
９ｂの抵抗R2を介して第２グリツド１５に印加
される。この第２グリツド１５にはリード線２
２、ステムリード２３を介して外部電源２４より
所定の電圧が印加される。 Therefore, as shown in the equivalent circuit of FIG. 2, the high voltage generated in the flyback transformer of the television set is applied to the anode terminal of the color picture tube via a stabilizing circuit, and is applied to the anode terminal of the color picture tube through the conductive coating, valve spacer 20, It is applied to the fourth grid 17 via the convergence electrode 18. The high voltage Vg 4 applied to the fourth grid 17 is applied to the third grid 16 via the resistor R 1 of the resistor 19b corresponding to the interval l 1 , and further applied to the third grid 16 through the resistor R 1 of the resistor 19b corresponding to the interval l 2.
9b is applied to the second grid 15 via the resistor R2 . This second grid 15 has a lead wire 2
2. A predetermined voltage is applied from an external power supply 24 via the stem lead 23.
したがつてこの等価回路に於て前述したように
第４グリツド１７に印加される電圧をVg4、第２
グリツド１５に印加される電圧をVg2とすると、
第３グリツド１６に印加される電圧Vg3は、
Vg3＝Vg2＋（Vg4−Vg2）R2／R1＋R2 ……(3)
で与えられ、
この(3)式から
R2／R1＋R2＝Vg3−Vg2／Vg4−Vg2 ……(4)
が求められ、(2)式と等価な式が得られる。 Therefore, in this equivalent circuit, as mentioned above, the voltage applied to the fourth grid 17 is Vg 4 and the voltage applied to the second grid 17 is Vg 4 .
If the voltage applied to the grid 15 is Vg 2 , then
The voltage Vg 3 applied to the third grid 16 is given by Vg 3 = Vg 2 + (Vg 4 - Vg 2 ) R 2 /R 1 + R 2 (3), and from this equation (3), R 2 /R 1 +R 2 =Vg 3 −Vg 2 /Vg 4 −Vg 2 ...(4) is obtained, and an equation equivalent to equation (2) is obtained.
これは、抵抗体の単位長さあたりの抵抗値が一
定であるとすると、前述した間隔l1、l2の分割比
によつて第３グリツド１６に所定の電圧が印加さ
れることを示している。 This indicates that if the resistance value per unit length of the resistor is constant, a predetermined voltage will be applied to the third grid 16 according to the division ratio of the intervals l 1 and l 2 mentioned above. There is.
前述した電子銃構体はバイポテンシヤル形につ
いて述べたが、前述の抵抗分割は、他の形の電子
銃にもそのまま適用されるし、陰極以外の電極を
抵抗体に植設した場合、外部電源を可変抵抗とし
た場合などにも適用されることは勿論である。 The above-mentioned electron gun structure was described as a bipotential type, but the resistance division described above is also applicable to other types of electron guns, and if an electrode other than the cathode is implanted in the resistor, it is necessary to connect an external power supply. Of course, it is also applicable to cases where a variable resistor is used.
上述の様に絶縁体の一部に抵抗体が一体に接合
された支持体を用い、その抵抗体に複数個の電極
のうち少なくとも３個の電極に取付けられた植設
部をそれら電極に印加する電圧に比例する間隔に
植設すると、本質的にこの一体構造の支持体をも
つ電子銃構体の特徴、即ち抵抗体に直接電極の植
設部を植設するため、抵抗体と電極とを接続する
格別のリード線が不要になる。また一対の支持体
間隔を抵抗体をもたない通常の電子銃構体の支持
体間隔と同じにすることができるため、抵抗体が
ネツク内壁に接近したとき生ずる不所望な電界現
象を防止できるなどの特徴を生かすことがでるば
かりでなく、比較的高い陽極電圧を抵抗体の抵抗
分割比により分割して所定の電極に所定の電圧を
印加でき、さらにステムピンからは比較的低い電
圧のみを印加すればよいので、ステムの構造を変
える必要がなくなる。更に複雑の構造の電子銃構
体にも簡単に所定の電極に所定の電圧を印加し得
るので、その工業的価値は大である。 As described above, a support body in which a resistor is integrally joined to a part of an insulator is used, and an implanted part attached to at least three of the plurality of electrodes is applied to the resistor. If the electrodes are implanted at intervals proportional to the voltage to be applied, the characteristics of the electron gun assembly having an integral support structure, that is, the electrode implantation part is directly implanted in the resistor, the resistor and the electrodes can be directly connected to each other. There is no need for special lead wires for connection. In addition, since the distance between the pair of supports can be made the same as the distance between the supports of a normal electron gun assembly that does not have a resistor, it is possible to prevent undesirable electric field phenomena that occur when the resistor approaches the inner wall of the net. In addition to making use of the characteristics of This eliminates the need to change the structure of the stem. Furthermore, since a predetermined voltage can be easily applied to a predetermined electrode even in an electron gun assembly having a complicated structure, its industrial value is great.
第１図は本発明の電子銃構体の一実施例をネツ
ク内に装着した状態を示す説明図、第２図は第１
図の電子銃構体の等価回路図である。
１３……陰極、１４……第１グリツド、１５…
…第２グリツド、１６……第３グリツド、１７…
…第４グリツド、１８……コンバーゼンス電極、
１９……支持体、１９ａ……絶縁体、１９ｂ……
抵抗体、２４……外部電源。
FIG. 1 is an explanatory diagram showing an embodiment of the electron gun assembly of the present invention installed in a net, and FIG.
FIG. 3 is an equivalent circuit diagram of the electron gun assembly shown in the figure. 13... cathode, 14... first grid, 15...
...Second grid, 16...Third grid, 17...
...4th grid, 18...convergence electrode,
19...Support, 19a...Insulator, 19b...
Resistor, 24...External power supply.
Claims (1)
と、この複数個の電極にそれぞれ取付けられた植
設部と、前記複数個の電極のうち少なくとも３個
の電極の植設部が植設されかつ陽極電圧を抵抗分
割してこの少なくとも３個の電極に所定の電圧を
供給する抵抗体及び前記少なくとも３個の電極以
外の電極の植設部が植設される絶縁体からなり、
この絶縁体の一部に前記抵抗体が接合された一体
構造の支持体とを具備し、前記抵抗体に対して前
記少なくとも３個の電極の植設部がこの少なくと
も３個の電極に印加される電圧に比例する間隔に
植設されていることを特徴とする電子銃構体。1 A plurality of electrodes arranged at predetermined intervals, implanted parts attached to each of the plurality of electrodes, and implanted parts of at least three of the plurality of electrodes are implanted. and comprises a resistor that divides the anode voltage and supplies a predetermined voltage to the at least three electrodes, and an insulator on which the implanted portions of the electrodes other than the at least three electrodes are implanted,
A part of the insulator is provided with an integrated support body to which the resistor is bonded, and an implanted portion of the at least three electrodes is applied to the at least three electrodes with respect to the resistor. An electron gun assembly characterized in that the electron gun structures are installed at intervals proportional to the voltage applied to the electron gun.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16273579A JPS5686446A (en) | 1979-12-17 | 1979-12-17 | Electron frame |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16273579A JPS5686446A (en) | 1979-12-17 | 1979-12-17 | Electron frame |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5686446A JPS5686446A (en) | 1981-07-14 |
| JPH0138346B2 true JPH0138346B2 (en) | 1989-08-14 |
Family
ID=15760260
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16273579A Granted JPS5686446A (en) | 1979-12-17 | 1979-12-17 | Electron frame |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5686446A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5177061A (en) * | 1974-11-29 | 1976-07-03 | Rca Corp | Denshiju |
| JPS5389360A (en) * | 1977-01-17 | 1978-08-05 | Sony Corp | Electronic gun constituent |
-
1979
- 1979-12-17 JP JP16273579A patent/JPS5686446A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5177061A (en) * | 1974-11-29 | 1976-07-03 | Rca Corp | Denshiju |
| JPS5389360A (en) * | 1977-01-17 | 1978-08-05 | Sony Corp | Electronic gun constituent |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5686446A (en) | 1981-07-14 |
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