JPH01313892A - Image display device and manufacture thereof - Google Patents

Image display device and manufacture thereof

Info

Publication number
JPH01313892A
JPH01313892A JP63145146A JP14514688A JPH01313892A JP H01313892 A JPH01313892 A JP H01313892A JP 63145146 A JP63145146 A JP 63145146A JP 14514688 A JP14514688 A JP 14514688A JP H01313892 A JPH01313892 A JP H01313892A
Authority
JP
Japan
Prior art keywords
display device
layer
image display
light
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63145146A
Other languages
Japanese (ja)
Inventor
Michio Okajima
道生 岡嶋
Akio Takimoto
昭雄 滝本
Masanori Watanabe
正則 渡辺
Eiichiro Tanaka
栄一郎 田中
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP63145146A priority Critical patent/JPH01313892A/en
Publication of JPH01313892A publication Critical patent/JPH01313892A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/84Passivation; Containers; Encapsulations
    • H10K50/841Self-supporting sealing arrangements
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/17Passive-matrix OLED displays

Landscapes

  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

PURPOSE:To obtain a bright multi-color display of long lifetime operating on low voltage by constituting the display with airtight substrates sandwiching the luminous part of an organic material. CONSTITUTION:An electric field luminous part 3 comprising an organic phosphor material and the like is sandwiched between a rear substrate 1 and a transparent glass substrate 2. A stripe-shaped rear electrode 4 and a transparent electrode 5 are formed in directions approximately orthogonal with each other at the side of the rear substrate 1 and glass substrate 2 faced to the electric field luminous part 3. In other words, the region where electrodes intersect each other becomes each picture element and is sandwiched and sealed with two opposite insulation substrates. Consequently, an external atmosphere as a major deterioration cause, and in particular an adverse effect on an organic compound layer due to the adsorption of an oxygen or moisture can be eliminated. According to the aforesaid construction, the lifetime of elements can be substantially extended.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は、 薄型デイスプレィなどの画像表示装置等に
関わるものである。
DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to image display devices such as thin displays.

従来の技術 近年、有機化合物を構成材料として用いた電界発光素子
の試みが報告された。例えば、ジャパニーズ・ジャーナ
ルΦオブ・アプライド・フィジックス(Japanes
e  Jounal  of  AppHed  Ph
1slas)27 (2)(1988)L289ページ
に記載されている有機蛍光体層および電荷輸送層を積層
した構造の電界発光素子等がある。第5図にその断面図
を示す。ガラス基板50上に半透明のAU製の下部電極
51をもうけ、その上に、膜厚2ooo′AのN、  
N”−ジフェニル−N、  N″−(3−メチルフェニ
ル)−1,1’ −ビフェニル−4,4′−ジアミン(
以後、TPDと略称する。)よりなる正孔輸送層52、
そしていずれも膜厚1000Aの、を機蛍光体層53及
びペリレンテトラカルボキシル基誘導体よりなる電子輸
送層54が構成されている。上部電極55は、Mg薄膜
より成る− 有機蛍光体層53の材料としてフタロペリ
ノン誘導体を用い、図のような静電界を印加することで
明るい電界発光が観測されている(第35回応用物理学
全巻期講演会)。有機蛍光体層53の材料を選択するこ
とで、発光、波長を変化させることができる。
BACKGROUND OF THE INVENTION In recent years, attempts have been made to develop electroluminescent devices using organic compounds as constituent materials. For example, Japanese Journal Φ of Applied Physics (Japanese Journal Φ of Applied Physics)
e Journal of Apphed Ph.
1slas) 27 (2) (1988), page L289, there is an electroluminescent device having a structure in which an organic phosphor layer and a charge transport layer are laminated. FIG. 5 shows its cross-sectional view. A semi-transparent lower electrode 51 made of AU is provided on a glass substrate 50, and a layer of N having a film thickness of 200'A is formed on the lower electrode 51.
N''-diphenyl-N, N''-(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine (
Hereinafter, it will be abbreviated as TPD. ), a hole transport layer 52 consisting of
A phosphor layer 53 and an electron transport layer 54 made of a perylene tetracarboxyl group derivative are constructed, both of which have a thickness of 1000 Å. The upper electrode 55 is made of a thin Mg film. A phthaloperinone derivative is used as the material for the organic phosphor layer 53, and bright electroluminescence is observed by applying an electrostatic field as shown in the figure (35th Applied Physics Complete Volume). Annual lecture). By selecting the material of the organic phosphor layer 53, the emission and wavelength can be changed.

発明が解決しようとする課題 しかし、上記従来例では、発光の劣化が速いという問題
点があった。上記従来例における発光半減時間は、印加
電圧50Vの時、約5時間しかなく、デイスプレィとし
て使用するには問題があうた。
Problems to be Solved by the Invention However, the conventional example described above has a problem in that the light emission deteriorates quickly. The luminescence half-life time in the conventional example was only about 5 hours when the applied voltage was 50 V, which was problematic for use as a display.

課題を解決するための手段 少なくとも一方が透明な、一対の気密質の基板の間隙部
に、少なくとも有機化合物を構成材料の全部もしくは一
部として含む、発光層、電極等から構成される発光部が
、両基板に挟まれて封着された構造をとる画像表示装置
を作成する。
Means for Solving the Problems A light-emitting section composed of a light-emitting layer, an electrode, etc. containing at least an organic compound as all or a part of its constituent material is provided in the gap between a pair of airtight substrates, at least one of which is transparent. , an image display device having a structure sandwiched and sealed between both substrates is created.

作用 上記の有機電界発光層等の有機化合物層は、対侍する2
枚の絶縁性基板に挟まれ密封される。従って、大きな劣
化原因である外部雰囲気、特に酸素もしくは水分の吸着
に伴う前記有機化合物層への悪影響がなくなる。その結
果、素子の寿命が飛躍的に延びる。
Function The organic compound layer such as the organic electroluminescent layer described above is
It is sandwiched between two insulating substrates and sealed. Therefore, there is no adverse effect on the organic compound layer due to adsorption of external atmosphere, particularly oxygen or moisture, which is a major cause of deterioration. As a result, the life of the element is dramatically extended.

実施1例 本発明の一実施例を、第1図、第2図に示す。Example of implementation An embodiment of the present invention is shown in FIGS. 1 and 2.

第1図は本願発明の画像表示装置における一実施例の斜
視図である。これは、有機蛍光体材料の電界発光素子を
用いた画像表示装置である。背面基板1と、透明なガラ
ス基板2の間に、有機蛍光体材料等からなる電界発光部
3がはさまれている。
FIG. 1 is a perspective view of an embodiment of the image display device of the present invention. This is an image display device using an electroluminescent element made of organic phosphor material. An electroluminescent section 3 made of an organic fluorescent material or the like is sandwiched between a back substrate 1 and a transparent glass substrate 2.

背面基板1及びガラス基板2の電界発光部3に面した側
には、ストライプ状の背面電極4と透明電極5が、それ
ぞれが、お互いにほぼ直交するような方向に形成されて
いる。お互いの電極が交差した領域がおのおのの絵素と
なる。、第2図は本実施例の画像表示装置の絵素の部分
の断面図である。
On the sides of the back substrate 1 and glass substrate 2 facing the electroluminescent section 3, striped back electrodes 4 and transparent electrodes 5 are formed in directions substantially perpendicular to each other. The area where the electrodes intersect each other becomes a picture element. , FIG. 2 is a sectional view of a picture element portion of the image display device of this embodiment.

本実施例では電界発光部3は、第2図のように、各々の
膜厚が500〜200OA程度の、有機電界発光層6(
以後、有機EL層と略称する。)、電荷発生層7及び電
荷輸送層8の3層よりなる積層構造をとる。
In this embodiment, as shown in FIG.
Hereinafter, it will be abbreviated as an organic EL layer. ), a charge generation layer 7 and a charge transport layer 8 .

背面電極4と透明電極5の間には、図に示すような、数
10v程度の直流もしくはパルス吠のバイアス電圧Vt
を印加する。
Between the back electrode 4 and the transparent electrode 5, a DC or pulsed bias voltage Vt of about several tens of volts is applied as shown in the figure.
Apply.

電界発光部3に印加された電界により、透明電極5から
電子が、背面電極4から正孔がそれぞれ有機EL層6に
注入され、そこでふく射再結合す次に、構成と、それぞ
れの材料について述べる。
Due to the electric field applied to the electroluminescent section 3, electrons are injected from the transparent electrode 5 and holes from the back electrode 4 are injected into the organic EL layer 6, where they are radiatively recombined.Next, the structure and each material will be described. .

背面基板1は、表面が平滑な、気密性の絶縁物もしくは
表面を絶縁物で被覆した金属板で、熱伝導性の良い材料
が好ましい。本実施例では裏面にA1反射膜を形成した
、厚さ1mmのガラス板を用いた。背面電極4には、幅
180μm1  ピッチ200μmでストライプ状に形
成したAI薄膜を用いた。これはCr+  A u、 
 N IN  W等でも良い。
The rear substrate 1 is preferably an airtight insulator with a smooth surface or a metal plate whose surface is coated with an insulator, and is preferably made of a material with good thermal conductivity. In this example, a 1 mm thick glass plate with an A1 reflective film formed on the back surface was used. For the back electrode 4, an AI thin film formed in a stripe shape with a width of 180 μm and a pitch of 200 μm was used. This is Cr+ A u,
N IN W etc. may also be used.

電荷発生層7にはP型のアモルファスSj+−xCx:
H合金を用いた。膜厚は1000〜3000Aが適当で
ある。材料は、有機EL層の発光波長に対して光感度を
有する感光体材料であれば良い。
The charge generation layer 7 includes P-type amorphous Sj+-xCx:
H alloy was used. A suitable film thickness is 1000 to 3000A. The material may be any photoreceptor material that has photosensitivity to the emission wavelength of the organic EL layer.

他には、P型のアモルファスSi1 アモルファスC1
Se系合金などの無機感光体材料や、ポリビニルカルバ
ゾール化合物、フタロシアニン顔料、アゾ系顔料、アズ
レニウム塩化合物などの有機感光体材料でも良い。これ
は、暗抵抗の大きな感光体材料であることが望ましい。
In addition, P-type amorphous Si1 amorphous C1
Inorganic photoreceptor materials such as Se-based alloys and organic photoreceptor materials such as polyvinyl carbazole compounds, phthalocyanine pigments, azo pigments, and azulenium salt compounds may be used. This is preferably a photoreceptor material with high dark resistance.

電荷発生層7に接して形成された電荷輸送層8は、正孔
移動度が大きく、電荷発生層7から電荷輸送層8への、
及び電荷輸送層8・から有機EL層6への正孔の注入効
率のよい正孔輸送材料であることが望ましい。本実施例
では、以下に示す化学構造のN、N’−ジフェニル−N
、N’−(3−メチルフェニル)−1,1’−ビフェニ
ル−4,4”−ジアミン、 (以後、TPDと略称する
。)を用いた。
The charge transport layer 8 formed in contact with the charge generation layer 7 has high hole mobility, and the hole mobility from the charge generation layer 7 to the charge transport layer 8 is
It is also desirable that the material is a hole transporting material that can efficiently inject holes from the charge transport layer 8 to the organic EL layer 6. In this example, N,N'-diphenyl-N with the chemical structure shown below is used.
, N'-(3-methylphenyl)-1,1'-biphenyl-4,4''-diamine (hereinafter abbreviated as TPD) was used.

これは膜500〜200OAの平滑なアモルファス薄膜
である。
This is a smooth amorphous thin film of 500 to 200 OA.

有機EL層6には、発光波長に応じて適当な有機蛍光体
材料が選択される。本実施例では、3”原色に対°応し
て、それぞれの絵素の部分にペリレン(オレンジ色)、
コロネン(緑)、アントラセン(青)を用いた。これは
、例えばフタロベニロン誘導体、ロダミンB1  クマ
リン誘導体や、蛍光金属キレート化合物等の蛍光色素で
も良い。膜厚は、500〜200OAである。
For the organic EL layer 6, an appropriate organic phosphor material is selected depending on the emission wavelength. In this example, perylene (orange) is placed in each picture element corresponding to the 3" primary color.
Coronene (green) and anthracene (blue) were used. This may be, for example, a phthalobenilone derivative, a rhodamine B1 coumarin derivative, or a fluorescent dye such as a fluorescent metal chelate compound. The film thickness is 500 to 200 OA.

透明電極5は、本実施例では、In−8n−0薄膜(I
TO)を用いた。他に、ZnO等でも良い。これも背面
電極4と同様に、幅180μm1ピッチ200μmでス
トライプ状に形成する。
In this example, the transparent electrode 5 is an In-8n-0 thin film (I
TO) was used. Alternatively, ZnO or the like may be used. Like the back electrode 4, this is also formed in a stripe shape with a width of 180 μm and a pitch of 200 μm.

第3図は、電極及び電界発光部3の構成を示した図であ
る。 (1)は、前記第1′の実施例の構成を示した図
である。構成において、他の実施例を(2)から(5)
に示す。 (2)は、 (1)同様5層構造であるが、
電界の方向が逆の場合である。
FIG. 3 is a diagram showing the structure of the electrodes and the electroluminescent section 3. As shown in FIG. (1) is a diagram showing the configuration of the first embodiment. In the configuration, other embodiments (2) to (5)
Shown below. (2) has a five-layer structure like (1), but
This is the case when the direction of the electric field is reversed.

この場合、背面電極4(以後、BEと略称する。)は 
MgAg合金を用い、電荷発生層7(以後、CGLと略
称する。)には、N型のアモルファスS i+−x C
x: H合金やアモルファスSi:H1Se系、Cd5
1 ZnO、アモルファスCzSe系合金などの無機感
光体材料や、ポリビニルカルバゾール化合物、フタロシ
アニン顔料、アゾ系顔料、アズレニウム塩化合物などの
有機感光体材料を用いる。電荷輸送層8(以後、CTL
と略称する。)の材料としては、たとえば以下に示す、
ペリレンテトラカルボキシル基誘導体(以後、Pvと略
称する。)等の電子輸送層を用いる。
In this case, the back electrode 4 (hereinafter abbreviated as BE) is
A MgAg alloy is used, and the charge generation layer 7 (hereinafter abbreviated as CGL) is made of N-type amorphous Si+-xC.
x: H alloy, amorphous Si:H1Se system, Cd5
1 Inorganic photoreceptor materials such as ZnO and amorphous CzSe alloys, and organic photoreceptor materials such as polyvinyl carbazole compounds, phthalocyanine pigments, azo pigments, and azulenium salt compounds are used. Charge transport layer 8 (hereinafter referred to as CTL
It is abbreviated as. ), for example, the following materials:
An electron transport layer such as a perylenetetracarboxyl group derivative (hereinafter abbreviated as Pv) is used.

まi、(3)の実施例の様に、有機EL層6(以後1.
ELと略称する。)を、CTLとCGLではさんだ構成
にしてやってもよい。本実施例では、CTLにはTPD
を、CGLには、N型のアモルファスSi+−xCx:
H合金を用いている。 (4)の実施例は、 (1)の
実施例において、CTLと透明電極5(以後、TEと略
称する。)の間に、Pvより成るCTLの層を設けたも
のである。
Also, as in the embodiment (3), the organic EL layer 6 (hereinafter referred to as 1.
It is abbreviated as EL. ) may be sandwiched between CTL and CGL. In this example, the CTL has a TPD
For CGL, N-type amorphous Si+-xCx:
H alloy is used. In the embodiment (4), in the embodiment (1), a CTL layer made of Pv is provided between the CTL and the transparent electrode 5 (hereinafter abbreviated as TE).

(5)の実施例は、N型のCGLとELをTEとBEで
挟んだ構成である。
The embodiment (5) has a configuration in which an N-type CGL and EL are sandwiched between a TE and a BE.

本発明の画像表示装置における電界発光素子は、Vt>
約45Vで発光が急激に強くなる。これは、つぎの様に
考えることができる。電界発光部3に印加される電界が
、各層の界面において電荷の注入に十分な強さに達し、
発光し始める。ひとたび光り始めれば、電荷発生層7の
抵抗値が急激に下がり、他の層や界面にかかる電界はま
すます強くなる。発光強度はその電界での注入できる電
流量で決まる。こんどは逆に印加電圧を小さくしてやっ
ても光り続け、vtく約40Vで急激に消光する。これ
は、再び電荷発生層7の抵抗が急激に大きくなることに
よる。
The electroluminescent element in the image display device of the present invention has Vt>
At about 45V, the light emission suddenly becomes stronger. This can be considered as follows. The electric field applied to the electroluminescent section 3 reaches a strength sufficient for charge injection at the interface of each layer,
It starts to emit light. Once it begins to glow, the resistance value of the charge generation layer 7 drops rapidly, and the electric field applied to other layers and interfaces becomes stronger. The light emission intensity is determined by the amount of current that can be injected in that electric field. This time, on the contrary, even if the applied voltage is reduced, the light continues to emit light, and suddenly disappears at about 40V. This is because the resistance of the charge generation layer 7 increases rapidly again.

本発明の画像表示装置の実際の駆動は、互いに直交する
ストライプ状の背面電極4と透明電極5を用いて線順次
駆動させる。その際、前述のヒステリシス特性を利用し
て、画像の書き込み、保持、書き換えをおこなっている
。即ち、まず、背面電極4には約42VのDCサスティ
ン電圧を印加しておく。書き込み時には、背面電極4に
線順次に点灯電圧を畳重してやる(全電圧50V)。−
旦点灯した絵素は、前記サスティン電圧により、1フレ
ームの期間中点灯状態が保持°される。1周期後の書換
え時には、負の消去電圧を畳重してから(全電圧35v
)再度新規に書き込んでやる。
The image display device of the present invention is actually driven by line sequential driving using striped back electrodes 4 and transparent electrodes 5 that are orthogonal to each other. At that time, the above-mentioned hysteresis characteristics are used to write, hold, and rewrite the image. That is, first, a DC sustain voltage of about 42V is applied to the back electrode 4. At the time of writing, the lighting voltage is applied to the back electrode 4 line by line (total voltage 50V). −
Once lit, the picture elements are kept lit for one frame period by the sustain voltage. When rewriting after one cycle, the negative erase voltage is superimposed (the total voltage is 35V).
) Write a new one again.

次に、本願発明の画像表示装置の製造方法について前記
第1実施例に基づいて説明する。
Next, a method for manufacturing an image display device according to the present invention will be explained based on the first embodiment.

裏面にA1反射膜を蒸着法などで形成したガラス製の背
面基板1上に、AI薄膜を蒸着した後で、フォトリソグ
ラフィー法等により、幅180μm1ピッチ200μm
のストライブ状の背面電極4を形成する。この上にP型
のアモルファスSi+−xCx:H合金膜を、スパッタ
法等により、1000〜3000A程度堆積する。TP
D製の電荷輸送層8は、この上に、真空蒸着法等、で、
500〜2000A程度のアモルファス薄膜として形成
する。
After depositing an AI thin film on the glass rear substrate 1 on which an A1 reflective film has been formed on the back surface by a vapor deposition method, etc., a width of 180 μm and a pitch of 200 μm is formed by a photolithography method or the like.
A striped back electrode 4 is formed. On top of this, a P-type amorphous Si+-xCx:H alloy film is deposited with a thickness of about 1000 to 3000 A by sputtering or the like. T.P.
A charge transport layer 8 made of D is applied thereon by a vacuum evaporation method or the like.
It is formed as an amorphous thin film of about 500 to 2000A.

一方今塵は、ガラス基板2に、まずITO製の透明電極
5を、背面電極1同様に、スパッタ法とフォトリソグラ
フィー法により形成し、その上に、有機EL層6を真空
蒸着法等により形成する。これらの工程において、有機
EL層θ、電荷発生層7及び電荷輸送層8はパターンニ
ングする必要はない。
On the other hand, in the present case, first, a transparent electrode 5 made of ITO is formed on a glass substrate 2 by sputtering and photolithography in the same way as the back electrode 1, and then an organic EL layer 6 is formed on it by a vacuum evaporation method or the like. do. In these steps, it is not necessary to pattern the organic EL layer θ, the charge generation layer 7, and the charge transport layer 8.

次に、膜を形成した背面基板工とガラス基板2を、それ
ぞれ膜を設けた面どうしを向かい合わせて、周囲をエポ
キシ樹脂等で接着し、背面基板1側の電荷輸送層8と、
ガラス基板側の有機EL層6を密着させる。なお接着面
は1.電荷輸送層8と有機EL層の間である必要はなく
、他の膜どうしであっても良い。密着させる際、以下の
3方法のいずれかをとる。即ち、(a)内部を真空排気
して密着させる方法と、(b)有機EL層6と電荷輸送
層8の軟化点及び融点を比較して、それらのうち、低い
ほうの軟化点以上、低いほうの融点以下の温度で加熱し
て圧着してやる方法と、(C)それら二つの方法を併用
する方法である。
Next, the back substrate with the film formed thereon and the glass substrate 2 are placed with their film-formed surfaces facing each other, and the periphery is bonded with epoxy resin or the like, and the charge transport layer 8 on the back substrate 1 side is bonded to the glass substrate 2.
The organic EL layer 6 on the glass substrate side is brought into close contact. The adhesive surface is 1. It does not have to be between the charge transport layer 8 and the organic EL layer, and may be between other films. When adhering, use one of the following three methods. That is, (a) a method of evacuating the inside to bring them into close contact; and (b) a method of comparing the softening point and melting point of the organic EL layer 6 and the charge transport layer 8, and comparing the softening point and melting point of the organic EL layer 6 and charge transport layer 8, (C) A method in which the material is heated and compressed at a temperature below its melting point, and (C) a method in which these two methods are used in combination.

まず、(a)の製造方法について、第4図で説明する。First, the manufacturing method of (a) will be explained with reference to FIG.

(1)に示すように、膜を形成した背面基板1とガラス
基板2を、それぞれ膜を設けた面どうしを向かい合わせ
て、周囲をエポキシ樹脂等の接着剤10で接着する。次
に、(II)に示すように、端部に設けた排気孔11か
ら真空排気し、封止する。
As shown in (1), the back substrate 1 on which the film is formed and the glass substrate 2 are bonded together with an adhesive 10 such as epoxy resin on the periphery of the back substrate 1 with the film-formed surfaces facing each other. Next, as shown in (II), the exhaust hole 11 provided at the end is evacuated and sealed.

電荷軸、送層8と、何機EL層6は大気圧により密着す
る。本方法により、接着面に、気胞等を残さずに密着さ
せることができる。(b)は、接着する面の有機膜を軟
化させた状態で圧着することで、膜の密着をよくするも
のである。これは、表面に小さな凹凸がある場合でも、
全面を完全に密着させることができる利点がある。電荷
輸送層8にTPDを、有機EL層6にアントラセ・ンを
用いた本実施例の場合、120°C〜180°Cに加熱
した状態で接着した。(c)は、(a)工程で、両基板
を接着した後、もしくは真空排気の最中に、接着面の有
機膜を軟化させ、全面を完全に密着させる方法である。
The charge axis, the feeding layer 8, and the EL layer 6 are brought into close contact with each other due to atmospheric pressure. By this method, it is possible to make the adhesive surface adhere to the adhesive surface without leaving any air bubbles or the like. (b) improves the adhesion of the films by compressing the organic film on the surface to be adhered in a softened state. This means that even if there are small irregularities on the surface,
It has the advantage that the entire surface can be completely adhered. In the case of this example in which TPD was used for the charge transport layer 8 and anthracene was used for the organic EL layer 6, the bonding was carried out under heating at 120°C to 180°C. (c) is a method in which the organic film on the bonding surface is softened after the two substrates are bonded in step (a) or during vacuum evacuation, so that the entire surface is completely adhered.

これは、(a)、(b)の利点を兼ね備えている。This combines the advantages of (a) and (b).

以上の、本願発明の画像表示装置は、発光輝度50fL
時の半減寿命において、約500〜1000時間を達成
することができた。また、エネルギー変換効率は、0.
5〜0.8%であった。
The above image display device of the present invention has a luminance of 50 fL.
It was possible to achieve a half-life of about 500 to 1000 hours. Moreover, the energy conversion efficiency is 0.
It was 5-0.8%.

本発明により、長寿命の、低電圧で安定に駆動する、高
輝度マルチカラーデイスプレィを実現することができた
。特に、以下の大きな効果が得られることが、本発明の
要点である。
The present invention has made it possible to realize a high-brightness multi-color display that has a long life and is stably driven at low voltage. In particular, the main point of the present invention is that the following significant effects can be obtained.

(1)まず、発光強度において、その寿命が、従来5時
程度度であったものが、本発明により約500〜100
0時間と、飛曜的、にのびた。これは、以下のように考
えられる。即ち、有機膜層を、対侍する2枚のガラス基
板の間に挟み込んで、外気から遮断したことにより、有
機膜界面へのH20や02等の気体分子の吸着が減少し
た。また膜内へのこれらの分子の侵入が減少した。それ
により、非ふく射再結合中心となる、界面準位や膜内の
捕捉中心の量が減少した。もしくは、電流もしくはそれ
による発熱によっておこると考えられる、非ふく射再結
合中心の増加も抑えることができた。
(1) First, in terms of luminescence intensity, the lifespan was conventionally about 5 hours, but with the present invention, it is about 500 to 100 hours.
It was 0 hours and I was so excited. This can be considered as follows. That is, by sandwiching the organic film layer between two opposing glass substrates and shielding it from the outside air, adsorption of gas molecules such as H20 and 02 to the organic film interface was reduced. Also, the entry of these molecules into the membrane was reduced. As a result, the amount of interface states and trapped centers within the film, which serve as non-radiative recombination centers, was reduced. Alternatively, it was also possible to suppress the increase in non-radiative recombination centers, which is thought to be caused by the current or the heat generated by it.

(2)次に、各層の膜厚を薄くしても高電圧をかけるこ
とができるようになり、発光効率の向上、駆動電圧の低
電圧化が実現できた。例えば第1のOAに゛しても、6
0〜70Vの電圧を安定に印加できた。前述のように、
パネルの駆動も、20Vpp程度の駆動電源で十分であ
る。従って、大電圧の駆動電源を必要としていた従来の
無機系EL素子にくらべて、大幅なコストダウンが実現
できる。これは、次のような作用によると考えられる。
(2) Next, it became possible to apply a high voltage even if the film thickness of each layer was made thinner, making it possible to improve luminous efficiency and lower the driving voltage. For example, even in the first OA, 6
A voltage of 0 to 70V could be stably applied. As aforementioned,
A driving power supply of about 20 Vpp is sufficient for driving the panel. Therefore, compared to conventional inorganic EL elements that require a high-voltage driving power source, a significant cost reduction can be achieved. This is thought to be due to the following effects.

即ち、従来の各層を順番に積層してゆく方法では、下層
にピンホールがあった場合、その上に導電層を蒸着する
とピンホールの内部にまでその導電層が充填されるので
、積層膜に電圧を印加した場合、そのピンホールの部分
の耐圧が低くなるが、本願発明の製造方法では、たとえ
下層°にピンホールがあっても、上の導電層はピンホー
ル内に侵入しないため耐圧は低下しない。
In other words, in the conventional method of laminating each layer in order, if there is a pinhole in the lower layer, if a conductive layer is deposited on top of it, the conductive layer will fill the inside of the pinhole. When a voltage is applied, the withstand voltage of the pinhole portion decreases, but in the manufacturing method of the present invention, even if there is a pinhole in the lower layer, the upper conductive layer does not penetrate into the pinhole, so the withstand voltage decreases. Does not decrease.

発明の効果 本発明によれば、気密性の基板で有機材料よりなる発光
部を挟む構成とすることにより、長寿命の、低電圧で安
定に駆動する、高輝度マルチカラーデイスプレィを実現
することができる。
Effects of the Invention According to the present invention, a high-brightness multicolor display that has a long life and is driven stably at low voltage can be realized by having a structure in which a light emitting part made of an organic material is sandwiched between airtight substrates. I can do it.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は、本発明の画像表示装置の一実施例の構成を示
す斜視図、第2図は、同実施例の断面図、第3図は、本
発明の電界発光部の構成の他の実施例を示す断面図、第
4図は本発明の画像表示装置の製造方法の一実施例を示
す断面図、第5図は、従来の有機電界発光素子の例を示
した断面図である。 1・・・背面基板、2・・・ガラス基板、3・・・電界
発光部、4・・・背面電極、5・・・透明電極、6・・
・有機EL層、7・・・電荷発生層、8・・・電荷輸送
層、10・・・接着剤、11・・・排気孔。 代理人の氏名 弁理士 中尾敏男 ほか1名第1図 4貨面を誓 第2区 l背面基板 第3図 (lン
FIG. 1 is a perspective view showing the configuration of an embodiment of the image display device of the present invention, FIG. 2 is a sectional view of the same embodiment, and FIG. 3 is a diagram showing another configuration of the electroluminescent section of the present invention. FIG. 4 is a cross-sectional view showing an example of the method for manufacturing an image display device of the present invention, and FIG. 5 is a cross-sectional view showing an example of a conventional organic electroluminescent device. DESCRIPTION OF SYMBOLS 1... Back substrate, 2... Glass substrate, 3... Electroluminescent part, 4... Back electrode, 5... Transparent electrode, 6...
- Organic EL layer, 7... Charge generation layer, 8... Charge transport layer, 10... Adhesive, 11... Exhaust hole. Name of agent: Patent attorney Toshio Nakao and one other person

Claims (7)

【特許請求の範囲】[Claims] (1) 少なくとも一方が透明な、一対の気密質の基板
の間隙部に、少なくとも有機化合物を構成材料の全部も
しくは一部として含む、発光層、電極等から構成される
発光部が、両基板に挟まれて封着された構造であること
を特徴とする画像表示装置。
(1) In the gap between a pair of airtight substrates, at least one of which is transparent, a light-emitting section consisting of a light-emitting layer, an electrode, etc. containing at least an organic compound as all or part of its constituent material is placed between both substrates. An image display device characterized by having a sandwiched and sealed structure.
(2) ガラス基板表面に複数のストライプ状の透明電
極と有機電界発光層を積層したフェースプレート電極板
と、絶縁性基板表面に複数のストライプ状の電極を設け
た背面電極板とを前記両電極板に設けたストライプ状電
極がほぼ直交する様に対向させ、周辺部をシールするか
、または真空中で周辺部を封合し、内部を真空排気して
相互に接触させたことを特徴とする特許請求の範囲第1
項に記載の画像表示装置。
(2) A face plate electrode plate in which a plurality of striped transparent electrodes and an organic electroluminescent layer are laminated on the surface of a glass substrate, and a back electrode plate in which a plurality of striped electrodes are provided on the surface of an insulating substrate are connected to both electrodes. It is characterized in that the striped electrodes provided on the plate are opposed to each other so as to be almost orthogonal, and the peripheral part is sealed, or the peripheral part is sealed in a vacuum, and the inside is evacuated and brought into contact with each other. Claim 1
The image display device described in .
(3) 特許請求の範囲第1項に記載の画像表示装置を
製造する方法であって、発光部を構成する発光層、電極
等から成る積層膜のうち、少なくとも最下層、もしくは
少なくとも積層膜全層ではない所定の層数を下層から順
番に下部基板に、一方残りの層は上層から順番に上部基
板にあらかじめ形成した後両基板の膜が形成された面ど
うしを対侍させ密着させることにより前記発光部を形成
することを特徴とする画像表示装置の製造方法。
(3) A method for manufacturing an image display device according to claim 1, wherein at least the bottom layer of the laminated film consisting of a light-emitting layer, an electrode, etc. constituting the light-emitting part, or at least the entire laminated film is By pre-forming a predetermined number of layers, which are not layers, on the lower substrate in order from the bottom layer, and on the other hand, forming the remaining layers on the upper substrate in order from the top layer, the film-formed surfaces of both substrates are brought into close contact with each other. A method of manufacturing an image display device, comprising forming the light emitting section.
(4) 発光部を構成する発光層、電極等から成る積層
膜のうち、少なくとも最下層、もしくは少なくとも積層
膜全層ではない所定の層数を下層から順番に下部基板に
、一方残りの層は上層から順番に上部基板にあらかじめ
形成した後、まず両基板の膜が形成された面どうしの周
囲を封合した後に間隙部を真空排気するか、または真空
中で周辺部を封合して、両基板面に分かれて形成されて
いた膜どうしを圧着し、発光部の積層膜を完成すること
を特徴とする特許請求の範囲第3項に記載の画像表示装
置の製造方法。
(4) Of the laminated film consisting of the light-emitting layer, electrodes, etc. constituting the light-emitting part, at least the lowest layer, or at least a predetermined number of layers that are not all the laminated films, are placed on the lower substrate in order from the bottom layer, while the remaining layers are After forming the layers in advance on the upper substrate in order from the top, first sealing the periphery of the film-formed surfaces of both substrates, then evacuating the gap, or sealing the periphery in vacuum, 4. The method of manufacturing an image display device according to claim 3, wherein the films formed separately on both substrate surfaces are pressed together to complete the laminated film of the light emitting section.
(5) 特許請求の範囲第1項に記載の画像表示装置を
製造する方法であって、発光層、電極等から成る積層膜
を作成する際に、加熱する工程を含むことを特徴とする
画像表示装置の製造方法。
(5) A method for manufacturing an image display device according to claim 1, which comprises a step of heating when creating a laminated film consisting of a light-emitting layer, an electrode, etc. A method for manufacturing a display device.
(6) 真空排気中または真空排気後に加熱する工程を
含むことを特徴とする特許請求の範囲第4項または第5
項に記載の画像表示装置の製造方法。
(6) Claim 4 or 5, which includes a step of heating during or after evacuation.
A method for manufacturing an image display device according to section 1.
(7) 加熱温度が発光部を構成する有機化合物の軟化
点以上、融点以下であることを特徴とする特許請求の範
囲第5項または第6項に記載の画像表示装置の製造方法
(7) The method for manufacturing an image display device according to claim 5 or 6, wherein the heating temperature is higher than the softening point and lower than the melting point of the organic compound constituting the light emitting part.
JP63145146A 1988-06-13 1988-06-13 Image display device and manufacture thereof Pending JPH01313892A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63145146A JPH01313892A (en) 1988-06-13 1988-06-13 Image display device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63145146A JPH01313892A (en) 1988-06-13 1988-06-13 Image display device and manufacture thereof

Publications (1)

Publication Number Publication Date
JPH01313892A true JPH01313892A (en) 1989-12-19

Family

ID=15378482

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63145146A Pending JPH01313892A (en) 1988-06-13 1988-06-13 Image display device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPH01313892A (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0210693A (en) * 1988-06-28 1990-01-16 Nec Corp Organic thin film el device
JPH02207488A (en) * 1989-02-07 1990-08-17 Mitsui Toatsu Chem Inc Thin film type luminescent element
JPH0377299A (en) * 1989-08-21 1991-04-02 Idemitsu Kosan Co Ltd Organic electroluminescense element
JPH07288185A (en) * 1994-04-20 1995-10-31 Dainippon Printing Co Ltd Organic thin film electroluminescent (el) element
JPH0945477A (en) * 1995-07-28 1997-02-14 Canon Inc Light emitting element and its manufacture
WO1999059382A1 (en) * 1998-05-08 1999-11-18 Idemitsu Kosan Co., Ltd. Organic electroluminescence device
US6341994B1 (en) 1999-01-13 2002-01-29 Nec Corporation Organic electroluminescent display device and method of manufacturing the same
JP2004079300A (en) * 2002-08-14 2004-03-11 Fuji Photo Film Co Ltd Light emitting element and its manufacturing method
WO2007034900A1 (en) * 2005-09-22 2007-03-29 Seiko Epson Corporation Process for producing organic luminescent device, organic luminescent device, and electronic equipment
WO2007060854A1 (en) * 2005-11-28 2007-05-31 Seiko Epson Corporation Method for manufacturing organic light-emitting device, organic light-emitting device and electronic device
US9520532B2 (en) 2004-07-23 2016-12-13 Semiconductor Energy Laboratory Co., Ltd. Light emitting element and light emitting device using the same

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0210693A (en) * 1988-06-28 1990-01-16 Nec Corp Organic thin film el device
JPH02207488A (en) * 1989-02-07 1990-08-17 Mitsui Toatsu Chem Inc Thin film type luminescent element
JPH0377299A (en) * 1989-08-21 1991-04-02 Idemitsu Kosan Co Ltd Organic electroluminescense element
JPH07288185A (en) * 1994-04-20 1995-10-31 Dainippon Printing Co Ltd Organic thin film electroluminescent (el) element
JPH0945477A (en) * 1995-07-28 1997-02-14 Canon Inc Light emitting element and its manufacture
US6762438B2 (en) 1998-05-08 2004-07-13 Idemitsu Kosan Co., Ltd. Organic electroluminescent layer with oligomer hole injection layer
WO1999059382A1 (en) * 1998-05-08 1999-11-18 Idemitsu Kosan Co., Ltd. Organic electroluminescence device
US6341994B1 (en) 1999-01-13 2002-01-29 Nec Corporation Organic electroluminescent display device and method of manufacturing the same
US6462470B1 (en) 1999-01-13 2002-10-08 Nec Corporation Organic electroluminescent display with three kinds of layer-stacked devices
JP2004079300A (en) * 2002-08-14 2004-03-11 Fuji Photo Film Co Ltd Light emitting element and its manufacturing method
US9520532B2 (en) 2004-07-23 2016-12-13 Semiconductor Energy Laboratory Co., Ltd. Light emitting element and light emitting device using the same
WO2007034900A1 (en) * 2005-09-22 2007-03-29 Seiko Epson Corporation Process for producing organic luminescent device, organic luminescent device, and electronic equipment
WO2007060854A1 (en) * 2005-11-28 2007-05-31 Seiko Epson Corporation Method for manufacturing organic light-emitting device, organic light-emitting device and electronic device

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