JPH01310572A - Microwave integrated circuit - Google Patents
Microwave integrated circuitInfo
- Publication number
- JPH01310572A JPH01310572A JP63142323A JP14232388A JPH01310572A JP H01310572 A JPH01310572 A JP H01310572A JP 63142323 A JP63142323 A JP 63142323A JP 14232388 A JP14232388 A JP 14232388A JP H01310572 A JPH01310572 A JP H01310572A
- Authority
- JP
- Japan
- Prior art keywords
- integrated circuit
- antenna element
- microwave
- microwave integrated
- amplifier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 abstract description 11
- 239000004065 semiconductor Substances 0.000 abstract description 9
- 238000000034 method Methods 0.000 abstract description 5
- 230000010354 integration Effects 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 230000005855 radiation Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000010408 film Substances 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 230000006750 UV protection Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000015654 memory Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Landscapes
- Aerials With Secondary Devices (AREA)
- Variable-Direction Aerials And Aerial Arrays (AREA)
- Circuits Of Receivers In General (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は衛星放送用受信機のアンテナ・コンバータ等の
マイクロ波送受信装置に関し、特にこの装置に適用でき
るマイクロ波集積回路に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a microwave transmitting/receiving device such as an antenna converter for a satellite broadcasting receiver, and particularly to a microwave integrated circuit applicable to this device.
従来衛星放送用受信機のアンテナ・コンバータは第８図
の様にパラボラ反射鏡３１と前記パラボラ反射鏡の焦点
部分に取り付けられた導波管構造の一次放射器（以後ホ
ーンと略す）３２とこれと接続されたコンバータ３３か
ら構成されており、前記コンバータ３３は第９図に示す
ように金属のケース３４と前記金属ケースに実装された
プリント板３５から構成されており、更に前記プリント
グ加工によって成形されたマイクロストリップライン回
路３６とこの回路上に装着された多数の高周波トランジ
スタやダイオードや抵抗やコンデンサー等の部品３７に
よるいわゆるディスクリート回路の構成と成っていた。As shown in FIG. 8, the antenna converter of a conventional satellite broadcasting receiver consists of a parabolic reflector 31, a waveguide-structured primary radiator (hereinafter abbreviated as a horn) 32 attached to the focal point of the parabolic reflector, and this. As shown in FIG. 9, the converter 33 is composed of a metal case 34 and a printed board 35 mounted on the metal case, and is further formed by the printing process. The microstrip line circuit 36 and components 37 such as high-frequency transistors, diodes, resistors, and capacitors mounted on this circuit constituted a so-called discrete circuit.
更に前記ホーンと前記プリント板とは同波管−同軸トラ
ンスデユーサ３８を介して接続されていた。Further, the horn and the printed board were connected via a coaxial tube-coaxial transducer 38.
この為従来の構成では多数の部品を使用しそれらを実装
し組み立てるための時間が掛かり製造原価が高い事と構
成が複雑で接続箇所が多いために損失が多く特性が悪い
欠点が有った。また構造が複雑で形が大きく、パラボラ
反射鏡が小形に成ってもホーンとコンバータが相対的に
小形と成らずアンテナ・コンバータの小形低価格化への
障害トなっていた。For this reason, conventional configurations have the drawbacks of high manufacturing costs due to the use of a large number of parts and the time it takes to mount and assemble them, as well as high losses and poor characteristics due to the complex configuration and many connection points. In addition, the structure is complicated and large, and even if the parabolic reflector is made smaller, the horn and converter cannot be made relatively smaller, which has been an obstacle to making antenna converters smaller and cheaper.
本発明は全く新しい発想によりこれらの問題を解決する
ものであり、例えばモノリシック集積回路による増幅回
路と、アンテナ用ホーンとして例えば平面アンテナ素子
によるアンテナ素子を採用するとともにこれらのアンテ
ナ素子と増幅回路を同一の半導体基板上に半導体集積技
術によって形成するか、あるいはまた異なる基板上に形
成して同一の密閉容器にポンディング作業等により実装
する。The present invention solves these problems using a completely new idea. For example, it employs an amplifier circuit using a monolithic integrated circuit and an antenna element using a planar antenna element as an antenna horn, and also uses the same antenna element and amplifier circuit. It is formed on a semiconductor substrate by semiconductor integration technology, or alternatively, it is formed on a different substrate and mounted in the same sealed container by a bonding operation or the like.
このように構成することにより導波管−同軸トランスデ
ユーサ等の部品を削除すると共にマイクロ波部分の接続
箇所数を削減することが出来てマイクロ波送受信装置の
特性を向上し小形低価格化に貢献する。By configuring it in this way, parts such as the waveguide-coaxial transducer can be removed, and the number of connection points in the microwave section can be reduced, improving the characteristics of the microwave transmitter/receiver and making it smaller and cheaper. To contribute.
〔実施例コ 次に本発明について図面を参照して詳細に説明する。[Example Next, the present invention will be explained in detail with reference to the drawings.
第１図と第２図は本発明の一実施例の断面図と外観斜視
図である。本発明によるマイクロ波集積回路からなる送
受信装置は第１図のようにアンテナ素子１と、例えばモ
ノリシッグミイクロ波集積回路（以後ＩＣと略す）チッ
プから成る増幅回路２と複数の端子３と密閉容器（以後
ケースと略す）４とから構成されており、ケース４の内
側は輻射開口部５と端子３の付近を除いて全て紫外線保
護と電磁シールドの為に例えばメタライズ等による金属
膜または金属６が施されている。輻射開口部５は例えば
ガラスまたはセラミックスまたはプラスチックの如き電
波を通過し気密性を保持する物質で構成されており外部
よりこの輻射開口部を通過した信号はアンテナ素子１に
よって受信されポンディングワイヤー７を経てＩＣチッ
プからなる増幅回路２によって増幅、周波数変換されて
ポンディングワイヤー８を経て端子３より出力される。FIGS. 1 and 2 are a sectional view and a perspective view of an embodiment of the present invention. As shown in FIG. 1, the transmitting/receiving device made of a microwave integrated circuit according to the present invention includes an antenna element 1, an amplifier circuit 2 made of, for example, a monolithic microwave integrated circuit (hereinafter abbreviated as IC) chip, and a plurality of terminals 3 in a sealed manner. The inside of the case 4, except for the radiation opening 5 and the vicinity of the terminal 3, is entirely coated with a metal film or metal 6 made of metallization, etc., for UV protection and electromagnetic shielding. is applied. The radiation opening 5 is made of a material, such as glass, ceramics, or plastic, that allows radio waves to pass through and maintains airtightness. Signals that pass through this radiation opening from the outside are received by the antenna element 1 and sent to the bonding wire 7. The signal is then amplified and frequency-converted by an amplifier circuit 2 made up of an IC chip, and outputted from a terminal 3 via a bonding wire 8.
尚、以上の説明で明らかなように第１図および第２図の
例のマイクロ波集積回路は例えば半導体メモリーや電荷
結合型（ＣＯＤ）撮像素子のように通常の半導体素子と
類似の組立製法を採用できるから生産性が高く自動組立
により安価大量に供給することが出来る。As is clear from the above explanation, the microwave integrated circuits of the examples shown in FIGS. 1 and 2 are manufactured using a similar assembly method to ordinary semiconductor devices, such as semiconductor memories and charge-coupled (COD) image sensors. Since it can be adopted, productivity is high and it can be supplied in large quantities at low cost through automatic assembly.
第３図は本発明の実施例の系統を示すブロック図であり
、増幅回路２として低雑音増幅器２ａ、更に周波数変換
器２ｂ、中間周波増幅器２ｃの機能を有する集積回路を
有しており、外部より局部発振信号を印加すれば受信コ
ンバータとして動作する。FIG. 3 is a block diagram showing a system of an embodiment of the present invention, which has an integrated circuit as an amplifier circuit 2 having the functions of a low-noise amplifier 2a, a frequency converter 2b, and an intermediate frequency amplifier 2c. If a local oscillation signal is applied, it operates as a receiving converter.
第４図は本発明の実施例の他の系統を示すブロック図で
あり、第３図の場合に加えて局部発振器２ｄの機能を有
する集積回路を含でいる。以上の説明で明らかなように
本発明のマイクロ波集積回路によれば外部から入射した
マイクロ波電波信号は殆ど本マイクロ波集積回路の内部
で信号処理されて外部には比較的周波数の低い中間周波
信号を出力するので本マイクロ波集積回路以外の周辺回
路の構成が非常に簡単となる特長を有する。FIG. 4 is a block diagram showing another system of the embodiment of the present invention, which includes, in addition to the case of FIG. 3, an integrated circuit having the function of a local oscillator 2d. As is clear from the above explanation, according to the microwave integrated circuit of the present invention, most of the microwave radio signals incident from the outside are processed within the microwave integrated circuit, and are sent to the outside as relatively low intermediate frequency signals. Since it outputs a signal, it has the advantage that the configuration of peripheral circuits other than the present microwave integrated circuit is extremely simple.
第５図は本発明のアンテナ素子のパターンの例を示す図
である。同図で（ａ）はスパイラル素子、（ｂ）はクロ
スダイポール素子、（Ｃ）はｌ／４波長先端開放線路素
子、（ｄ）はパッチ素子、更に（ｅ）はこれらのアンテ
ナ素子を複数配列して放射利得を増加させた例を示し、
特にクロスダイポール素子を複数配列した例を示す。こ
れらのアンテナ素子・は取り扱う電波が円偏波か直線偏
波かによって最適な方式を選定される。これらのアンテ
ナ素子は第１図に示すように例えばアルミナセラミック
スの如き絶縁体基板９上に厚膜または薄膜技術によって
形成しケース５の内部に実装される。また前記アンテナ
素子を構成する基板９として例えばシリコンまたはガリ
ウムヒ素の様なマイクロ波集積回路を構成する半導体基
板を採用して更に前記増幅回路等２を前記半導体基板９
上にアンテナ素子と一緒に半導体集積技術によって集積
してもよい。この様にすれば第１図の構成においてアン
テナ素子１と増幅回路２との間のポンディングワイヤー
７を省略できて、マイクロ波集積回路の組立作業がより
簡単になると共に接続箇所による特性の劣化を削除でき
るので更に特性のよいマイクロ波集積回路を実現するこ
とが出来る。FIG. 5 is a diagram showing an example of the pattern of the antenna element of the present invention. In the figure, (a) is a spiral element, (b) is a cross dipole element, (C) is a 1/4 wavelength open line element, (d) is a patch element, and (e) is a multiple arrangement of these antenna elements. An example of increasing the radiation gain by
In particular, an example in which a plurality of cross dipole elements are arranged will be shown. The optimal system for these antenna elements is selected depending on whether the radio waves handled are circularly polarized waves or linearly polarized waves. As shown in FIG. 1, these antenna elements are formed on an insulating substrate 9 such as alumina ceramics by thick film or thin film technology and mounted inside a case 5. Further, as the substrate 9 constituting the antenna element, a semiconductor substrate constituting a microwave integrated circuit, such as silicon or gallium arsenide, is adopted, and the amplifier circuit 2 is further connected to the semiconductor substrate 9.
It may be integrated thereon together with an antenna element using semiconductor integration technology. In this way, the bonding wire 7 between the antenna element 1 and the amplifier circuit 2 can be omitted in the configuration shown in FIG. Since it is possible to eliminate this, it is possible to realize a microwave integrated circuit with even better characteristics.
第６図は本発明によるマイクロ波集積回路を使用したア
ンテナ・コンバータの構成例を示す図であり、パラボラ
反射鏡１１の焦点にコンバータ１２が配置されている。FIG. 6 is a diagram showing an example of the configuration of an antenna converter using the microwave integrated circuit according to the present invention, in which the converter 12 is placed at the focal point of the parabolic reflector 11.
第７図は第６図のコンバータ１２の構造例を示す断面図
であり、本発明になるマイクロ波集積回路２１はプリン
ト基板２２上に例えば電源安定化回路等の通常の低周波
回路の部品と共に半田付は等の通常の容易な工法により
実装される。２３はコンバータ１２の筐体であり、例え
ばプラスチックの様な電波を通過させる物質で構成され
、プリント基板２２や信号用コネクター２４を保持する
。第７図の例のように本発明になるマイクロ波集積回路
を使用したコンバータは従来のように導波管で出来たホ
ーンや導波管−同軸トランスデユーサを必要としないた
め構造が非常に簡単であり、またマイクロ波信号のほと
んどの部分が本発明になるマイクロ波集積回路２１の内
部にて処理され外部には比較的低い周波数に変換された
中間周波信号が出力されるため周辺回路の構成が非常に
簡単に出来ると共にプリント基板２２の材料としてもマ
イクロ波回路用の高価なテフロンガラスクロス基板の代
わりに例えばフェノール基板等のような安価なプリント
基板材料を採用することが出来て、構成が簡単で小形で
組立易く安価なアンテナ・コンバータを提供することが
出来る。FIG. 7 is a cross-sectional view showing an example of the structure of the converter 12 shown in FIG. Mounting is carried out by ordinary and easy methods such as soldering. Reference numeral 23 denotes a housing of the converter 12, which is made of a material that allows radio waves to pass, such as plastic, and holds the printed circuit board 22 and the signal connector 24. As shown in the example in Fig. 7, the converter using the microwave integrated circuit according to the present invention does not require a horn made of a waveguide or a waveguide-coaxial transducer as in the past, so the structure is very simple. It is simple, and most of the microwave signal is processed inside the microwave integrated circuit 21 of the present invention, and an intermediate frequency signal converted to a relatively low frequency is outputted to the outside, so that the peripheral circuits are not required. The structure is very simple, and an inexpensive printed circuit board material such as a phenol substrate can be used instead of an expensive Teflon glass cloth substrate for microwave circuits as the material for the printed circuit board 22. It is possible to provide an antenna converter that is simple, small, easy to assemble, and inexpensive.
尚、以上の説明は受信装置について述べたが第３図及び
第４図の構成において、低雑音増幅器の代わりに電力増
幅器とし、更に各構成要素における信号の流れを逆とな
るよう構成すれば端子３に印加した信号を中間周波増幅
器によって増幅し周波数変換器によって周波数変換し電
力増幅器によって増幅しアンテナ素子から電波として放
射する機能を有する送信装置を実現することもできる。The above explanation has been about the receiving device, but in the configurations of FIGS. 3 and 4, if a power amplifier is used instead of the low-noise amplifier and the signal flow in each component is reversed, the terminal It is also possible to realize a transmitting device having the functions of amplifying the signal applied to 3 with an intermediate frequency amplifier, converting the frequency with a frequency converter, amplifying with a power amplifier, and radiating the signal as a radio wave from an antenna element.
この場合も本発明に含まれることは明らかである。It is clear that this case is also included in the present invention.
以上に説明した様に本発明によれば、例えばモノリシッ
ク集積回路から成る増幅器と例えば平面アンテナ素子か
ら成るアンテナ素子を有するマイクロ波集積回路を構成
することにより、接続箇所が少なく組立が容易で、損失
が少なく、特性のよい、小形で、安価なマイクロ波送信
装置または受信装置を提供することが出来る。As explained above, according to the present invention, by configuring a microwave integrated circuit having an amplifier made of, for example, a monolithic integrated circuit and an antenna element made of, for example, a planar antenna element, assembly is easy with fewer connection points, and loss is reduced. Accordingly, it is possible to provide a small, inexpensive microwave transmitting device or receiving device with a small amount of noise and good characteristics.
第１図は本発明の一実施例のマイクロ波集積回路の断面
図、第２図は本発明の一実施例のマイクロ波集積回路の
外観図、第３図は本発明の一実施例の系統を示すブロッ
ク図、第４図は本発明の実施例の他の系統を示すブロッ
ク図、第５図は本発明のアンテナ素子の方式の実施例を
示す図、第６図は本発明のマイクロ波集積回路を使用し
たアンテナ・コンバータの構成例を示す図、第７図は本
発明のマイクロ波集積回路を用いたコンバータの一実施
例の断面図、第８図は従来のアンテナ・コンバータの構
成例を示す図、第９図は従来のコンバータの断面図であ
る。
１・・・・・・アンテナ素子、２・・・・・・増幅回路
、３・・・・・・端子、４・・・・・・密閉容器、５・
・・・・・輻射開口部、６・・・・・・メタライズ等に
よる金属膜または金属、７，８・・・・・・ポンディン
グワイヤー、９・・・・・・基板、１１゜３１・・・・
・・パラボラ反射鏡、１２，３３・・・・・・コンバー
タ、２１・・・・・・マイクロ波集積回路、２２．３５
・・・・・・プリント基板、２３．３４・・・・・・筐
体、２４・・・・・・信号用コネクター、３２・・・・
・・−次放射器、３６・・・・・・マイクロストリップ
ライン回路、３７・・・・・・ディスクリート回路、３
８・・・・・・トランスデユーサ。
代理人 弁理士 内 原 音
第夕回
（ａン （ｂ）
（ｃ） （ｄ）（ｅ）
第８図 箭ｑ図FIG. 1 is a sectional view of a microwave integrated circuit according to an embodiment of the present invention, FIG. 2 is an external view of a microwave integrated circuit according to an embodiment of the present invention, and FIG. 3 is a system diagram of an embodiment of the present invention. FIG. 4 is a block diagram showing another system of the embodiment of the present invention, FIG. 5 is a diagram showing an embodiment of the antenna element system of the present invention, and FIG. A diagram showing an example of the configuration of an antenna converter using an integrated circuit, FIG. 7 is a cross-sectional view of an embodiment of the converter using the microwave integrated circuit of the present invention, and FIG. 8 is a configuration example of a conventional antenna converter. FIG. 9 is a sectional view of a conventional converter. DESCRIPTION OF SYMBOLS 1...Antenna element, 2...Amplification circuit, 3...Terminal, 4...Airtight container, 5...
... Radiation opening, 6 ... Metal film or metal by metallization, etc., 7, 8 ... Bonding wire, 9 ... Substrate, 11°31. ...
...Parabola reflector, 12,33...Converter, 21...Microwave integrated circuit, 22.35
...Printed circuit board, 23.34...Housing, 24...Signal connector, 32...
...-Next radiator, 36...Microstrip line circuit, 37...Discrete circuit, 3
8...Transducer. Agent Patent Attorney Uchihara Sound Evening Session (a) (b)
(c) (d) (e) Figure 8 Chew diagram
Claims (6)
るマイクロ波集積回路。(1) A microwave integrated circuit characterized by having an antenna element and an amplifier circuit.
し、前記密閉容器の壁を貫通して設けられた端子を介し
て信号の授受を行うことを特徴とするマイクロ波集積回
路。(2) A microwave integrated circuit having an antenna element and an amplifier circuit in the same sealed container, and transmitting and receiving signals through a terminal provided through a wall of the sealed container.
いた特許請求の範囲第１項記載のマイクロ波集積回路。(3) The microwave integrated circuit according to claim 1, which uses a spiral antenna element as the antenna element.
た特許請求の範囲第１項記載のマイクロ波集積回路。(4) The microwave integrated circuit according to claim 1, which uses a cross dipole element as an antenna element.
を用いた特許請求の範囲第１項記載のマイクロ波集積回
路。(5) The microwave integrated circuit according to claim 1, which uses a 1/4 wavelength open-ended line element as the antenna element.
の範囲第１項のマイクロ波集積回路。(6) The microwave integrated circuit according to claim 1, which uses a patch element as an antenna element.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63142323A JPH01310572A (en) | 1988-06-08 | 1988-06-08 | Microwave integrated circuit |
| US07/362,380 US5142698A (en) | 1988-06-08 | 1989-06-07 | Microwave integrated apparatus including antenna pattern for satellite broadcasting receiver |
| EP89305803A EP0346125B1 (en) | 1988-06-08 | 1989-06-08 | Microwave integrated apparatus for satellite broadcasting receiver |
| DE68924001T DE68924001T2 (en) | 1988-06-08 | 1989-06-08 | Integrated microwave device for a broadcast satellite receiver. |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63142323A JPH01310572A (en) | 1988-06-08 | 1988-06-08 | Microwave integrated circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01310572A true JPH01310572A (en) | 1989-12-14 |
Family
ID=15312677
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63142323A Pending JPH01310572A (en) | 1988-06-08 | 1988-06-08 | Microwave integrated circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01310572A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1997011445A1 (en) * | 1995-09-20 | 1997-03-27 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Consumption measurement system for remote reading |
| JPH11266172A (en) * | 1998-03-17 | 1999-09-28 | Nec Eng Ltd | Transmitter/receiver front end |
| US6263193B1 (en) | 1997-03-28 | 2001-07-17 | Kabushiki Kaisha Toshiba | Microwave transmitter/receiver module |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS607760A (en) * | 1983-06-28 | 1985-01-16 | Toshiba Corp | Manufacture of ic card |
| JPS6477202A (en) * | 1987-09-18 | 1989-03-23 | Fujitsu Ltd | Semiconductor device for millimeter wave band |
-
1988
- 1988-06-08 JP JP63142323A patent/JPH01310572A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS607760A (en) * | 1983-06-28 | 1985-01-16 | Toshiba Corp | Manufacture of ic card |
| JPS6477202A (en) * | 1987-09-18 | 1989-03-23 | Fujitsu Ltd | Semiconductor device for millimeter wave band |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1997011445A1 (en) * | 1995-09-20 | 1997-03-27 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Consumption measurement system for remote reading |
| US6115677A (en) * | 1995-09-20 | 2000-09-05 | Fraunhofer-Gesellschaft Zur Foderung Der Angewandten Forschung E.V. | Consumption measurement system for remote reading |
| US6263193B1 (en) | 1997-03-28 | 2001-07-17 | Kabushiki Kaisha Toshiba | Microwave transmitter/receiver module |
| JPH11266172A (en) * | 1998-03-17 | 1999-09-28 | Nec Eng Ltd | Transmitter/receiver front end |
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