JPH0129802Y2 - - Google Patents

Info

Publication number
JPH0129802Y2
JPH0129802Y2 JP15141983U JP15141983U JPH0129802Y2 JP H0129802 Y2 JPH0129802 Y2 JP H0129802Y2 JP 15141983 U JP15141983 U JP 15141983U JP 15141983 U JP15141983 U JP 15141983U JP H0129802 Y2 JPH0129802 Y2 JP H0129802Y2
Authority
JP
Japan
Prior art keywords
multilayer ceramic
ceramic substrate
chip capacitor
recess
lcc
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP15141983U
Other languages
Japanese (ja)
Other versions
JPS6059561U (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP15141983U priority Critical patent/JPS6059561U/en
Publication of JPS6059561U publication Critical patent/JPS6059561U/en
Application granted granted Critical
Publication of JPH0129802Y2 publication Critical patent/JPH0129802Y2/ja
Granted legal-status Critical Current

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Description

【考案の詳細な説明】 (a) 考案の技術分野 本考案は高密度実装に適した半導体装置に関す
る。
[Detailed description of the invention] (a) Technical field of the invention The present invention relates to a semiconductor device suitable for high-density packaging.

(b) 技術の背景 半導体装置を高密度に実装し、電子機器の小型
化を図るために、複数の半導体集積回路チツプや
コンデンサなどの電子部品を多層配線の施された
セラミツク基板上に搭載したモジユール化するこ
とが行なわれている。
(b) Background of the technology In order to package semiconductor devices with high density and miniaturize electronic equipment, electronic components such as multiple semiconductor integrated circuit chips and capacitors are mounted on a ceramic substrate with multilayer wiring. Modularization is underway.

(c) 従来技術と問題点 このようなモジユール化された半導体装置は従
来第1図a及びbの平面図及び側面図に示すよう
な構造を有している。
(c) Prior Art and Problems Such a modular semiconductor device conventionally has a structure as shown in the plan view and side view of FIGS. 1a and 1b.

尚第1図a及びbにおいて、1は多層セラミツ
ク基板、2は一方向に導出されたリードピン、3
はリードレスチツプキヤリヤ(以下LCCと称
す)、4はチツプコンデンサである。
In FIGS. 1a and 1b, 1 is a multilayer ceramic substrate, 2 is a lead pin led out in one direction, and 3 is a multilayer ceramic substrate.
is a leadless chip carrier (hereinafter referred to as LCC), and 4 is a chip capacitor.

尚、チツプコンデンサは電源ノイズによる誤動
作を防止するためのバイパスコンデンサである。
Note that the chip capacitor is a bypass capacitor to prevent malfunction due to power supply noise.

第1図a及びbにおいて複数枚のグリーンシー
トに配線用導体回路が印刷され一方向に導出され
た複数のリードピン2を有する多層セラミツク基
板1の上面には実装用の複数の半田付パツド(図
示せず)が形成され、図示したごとく外面に複数
の接続用パツトを有するLCC3とチツプコンデ
ンサ4が交互に直列に半田付などによつて接続さ
れている。
In FIGS. 1a and 1b, a multilayer ceramic substrate 1 has conductive circuits printed on a plurality of green sheets and has a plurality of lead pins 2 led out in one direction. On the upper surface of the multilayer ceramic substrate 1, there are a plurality of solder pads for mounting (Fig. As shown in the figure, LCCs 3 and chip capacitors 4 having a plurality of connection pads on their outer surfaces are alternately connected in series by soldering or the like.

かかる構造においてはLCC3とチツプコンデ
ンサ4が同一平面上に直列に実装するスペースが
必要となり、より高密度に実装することが難かし
いという問題があつた。
In such a structure, a space is required to mount the LCC 3 and the chip capacitor 4 in series on the same plane, making it difficult to mount them at a higher density.

その改良として第2図の要部断面図に示すよう
に予め多層セラミツク基板11の上面に実施され
るLCC12の直下に図示したように所定の凹部
13を設け、該凹部13内にチツプコンデンサ1
4を搭載するようにした構造が考えられる。
As an improvement, a predetermined recess 13 is provided in advance on the upper surface of the multilayer ceramic substrate 11 directly below the LCC 12, as shown in the sectional view of the main part of FIG.
A structure in which 4 is mounted is conceivable.

しかしながらかかる構造においては形成する凹
部13の寸法がLCC12の寸法により規定され、
従つて前記凹部13内に搭載するチツプコンデン
サ14も規定されることになる。そのため装置特
性上の所望のチツプコンデンサが使用できないな
どの問題があつた。
However, in such a structure, the dimensions of the recess 13 to be formed are defined by the dimensions of the LCC 12,
Therefore, the chip capacitor 14 to be mounted within the recess 13 is also defined. Therefore, there were problems such as not being able to use a desired chip capacitor due to device characteristics.

(d) 考案の目的 本考案の目的は、かかる問題点を解消して高密
度実装に適し、かつ特性向上可能な半導体装置の
提供にある。
(d) Purpose of the invention The purpose of the invention is to solve the above problems and provide a semiconductor device which is suitable for high-density packaging and whose characteristics can be improved.

(e) 考案の構成 その目的を達成するため本考案は、表面にリー
ドレスチツプキヤリヤ取付用パツドが複数組形成
され、且つ内部に配線層を有する多層セラミツク
基板と、半導体素子を収容し且つ外面に接続用パ
ツドを有する複数のリードレスチツプキヤリヤと
を具備し、該リードレスチツプキヤリヤはそれぞ
れ該多層セラミツク基板に半田付けされ、該多層
セラミツク基板の一方の端部から複数のリードピ
ンが導出され、且つ他方の端部に形成された凹部
内にチツプコンデンサが搭載されてなることを特
徴とする。
(e) Structure of the invention In order to achieve the object, the invention comprises a multilayer ceramic substrate on which a plurality of pads for attaching leadless chip carriers are formed on the surface thereof, and a wiring layer inside, and a semiconductor element. a plurality of leadless chip carriers having connection pads on their outer surfaces, each of the leadless chip carriers being soldered to the multilayer ceramic substrate, and a plurality of lead pins extending from one end of the multilayer ceramic substrate; It is characterized in that a chip capacitor is mounted in a recess formed at the other end.

(f) 考案の実施例 以下本考案の実施例について図面を参照して説
明する。
(f) Embodiments of the invention Examples of the invention will be described below with reference to the drawings.

第3図は本考案の一実施例を示す側面図、第4
図は同じくその要部斜視図で前図と同等の部分に
ついては同一符号を付している。
Figure 3 is a side view showing one embodiment of the present invention;
The figure is also a perspective view of the main parts, and the same reference numerals are given to the same parts as in the previous figure.

第3図及び第4図において21は内部に配線層
を有する多層セラミツク基板、21′は該多層セ
ラミツク基板上に設けられたLCC取付け用パツ
ド、22は該多層セラミツク基板の側面に設けら
れた凹部、23は外面に複数の接続用パツドを有
するLCC、24はチツプコンデンサ、24′はチ
ツプコンデンサの電極、25は一方向に導出され
たリードピンを示す。
In FIGS. 3 and 4, 21 is a multilayer ceramic board having a wiring layer inside, 21' is an LCC mounting pad provided on the multilayer ceramic board, and 22 is a recess provided on the side surface of the multilayer ceramic board. , 23 is an LCC having a plurality of connection pads on its outer surface, 24 is a chip capacitor, 24' is an electrode of the chip capacitor, and 25 is a lead pin led out in one direction.

図から明らかなように本考案が従来と異なる点
は多層セラミツク基板21の一方向に導出された
リードピン25を有する側面の対向する側面に所
望の凹部22を設けて、該凹部22にチツプコン
デンサ24を収納した点にある。
As is clear from the figure, the present invention is different from the conventional one in that a desired recess 22 is provided on the side surface opposite to the side surface having the lead pins 25 led out in one direction of the multilayer ceramic substrate 21, and a chip capacitor 24 is provided in the recess 22. It is in the point where it is stored.

該凹部22は、多層セラミツク基板作成時に所
定のグリーンシートにチツプコンデンサ24が収
納可能な所望の凹部を形成し積層焼結して作成さ
れ、該凹部22の内部にはチツプコンデンサの電
極24′を半田付けなどによつて接続される半田
付用パツドが設けられており、接続されたコンデ
ンサの電極24′は多層セラミツク基板内に複数
に配線された内部配線によつて、リードピン25
に接続されている。
The recess 22 is created by forming a desired recess in which the chip capacitor 24 can be accommodated in a predetermined green sheet during the production of the multilayer ceramic substrate, and laminating and sintering it. A soldering pad that is connected by soldering or the like is provided, and the electrode 24' of the connected capacitor is connected to the lead pin 25 by a plurality of internal wirings in the multilayer ceramic board.
It is connected to the.

かかる構造によれば多層セラミツク基板21の
上面のLCC取付用パツド21′にLCC23のみを
半田付などによつて接続し、チツプコンデンサ2
4の実装スペースが不要となり、かつ側面の凹部
22の形状はLCC23と関係なく多層セラミツ
ク基板21作成時に所望形状に作成することがで
き、従つて所望のチツプコンデンサ24を使用す
ることが可能となり装置の特性の向上を行なうこ
とができる。
According to this structure, only the LCC 23 is connected to the LCC mounting pad 21' on the top surface of the multilayer ceramic substrate 21 by soldering or the like, and the chip capacitor 2
4 is no longer required, and the shape of the recess 22 on the side surface can be made into a desired shape at the time of making the multilayer ceramic substrate 21 regardless of the LCC 23. Therefore, it is possible to use a desired chip capacitor 24, and the device It is possible to improve the characteristics of

(g) 考案の効果 以上説明したごとく本考案によれば、限られた
実装スペースを有効に利用でき、かつ特性が向上
した半導体装置が提供される。尚上記実施例にお
けるコンデンサ以外に抵抗などその他の電子部品
を収納しても良いことは言うまでもない。
(g) Effects of the invention As explained above, according to the invention, a semiconductor device that can effectively utilize the limited mounting space and has improved characteristics is provided. It goes without saying that other electronic components such as resistors may be housed in addition to the capacitors in the above embodiments.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は及び第2図は従来の半導体装置の構造
を示す図、第3図は本考案の一実施例を示す側面
図、第4図は同じくその要部斜視図である。 図において、21は多層セラミツク基板、22
は該多層セラミツク基板の側面に設けられた凹
部、23はリードレスチツプキヤリヤ、24はチ
ツプコンデンサ、25はリードピンを示す。
1 and 2 are views showing the structure of a conventional semiconductor device, FIG. 3 is a side view showing an embodiment of the present invention, and FIG. 4 is a perspective view of the main parts thereof. In the figure, 21 is a multilayer ceramic substrate, 22
2 shows a recess provided on the side surface of the multilayer ceramic substrate, 23 a leadless chip carrier, 24 a chip capacitor, and 25 a lead pin.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 表面にリードレスチツプキヤリヤ取付用パツド
が複数組形成され且つ内部に配線層を有する多層
セラミツク基板と、半導体素子を収容し且つ外面
に接続用パツドを有する複数のリードレスチツプ
キヤリヤを具備し、該リードレスチツプキヤリヤ
はそれぞれ該多層セラミツク基板上に半田付さ
れ、該多層セラミツク基板の一方の端部から複数
のリードピンが導出され、且つ他方の端部に形成
された凹部内にチツプコンデンサが搭載されてな
ることを特徴とする半導体装置。
A multilayer ceramic substrate having a plurality of leadless chip carrier mounting pads formed on its surface and a wiring layer inside, and a plurality of leadless chip carriers accommodating semiconductor elements and having connection pads on its outer surface. , each of the leadless chip carriers is soldered onto the multilayer ceramic substrate, a plurality of lead pins are led out from one end of the multilayer ceramic substrate, and a chip capacitor is placed in a recess formed at the other end. A semiconductor device characterized by being equipped with.
JP15141983U 1983-09-29 1983-09-29 semiconductor equipment Granted JPS6059561U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15141983U JPS6059561U (en) 1983-09-29 1983-09-29 semiconductor equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15141983U JPS6059561U (en) 1983-09-29 1983-09-29 semiconductor equipment

Publications (2)

Publication Number Publication Date
JPS6059561U JPS6059561U (en) 1985-04-25
JPH0129802Y2 true JPH0129802Y2 (en) 1989-09-11

Family

ID=30335548

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15141983U Granted JPS6059561U (en) 1983-09-29 1983-09-29 semiconductor equipment

Country Status (1)

Country Link
JP (1) JPS6059561U (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0714110B2 (en) * 1988-08-17 1995-02-15 株式会社村田製作所 Multilayer ceramic substrate
JP4817110B2 (en) * 2005-12-26 2011-11-16 株式会社村田製作所 Multilayer circuit board and IC package
JP2017126710A (en) * 2016-01-15 2017-07-20 株式会社村田製作所 Composite electronic component

Also Published As

Publication number Publication date
JPS6059561U (en) 1985-04-25

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